KR102463922B1 - Method for forming fine patterns - Google Patents

Abstract

A spacer providing first interstitial spaces having laterally concave cleavage shapes in a central portion between the pillars as some portions of a spacer layer covering sidewalls of the pillars abut against each other A fine pattern for forming a (spacer) layer and forming a healing layer of a polymer material that provides a second interspace in the first interspace by filling the trough-shaped portion of the first interspace on the spacer layer Suggest a method of formation.

Description

Method for forming fine patterns

The present application relates to semiconductor technology, and more particularly, to a method of forming fine-sized patterns in a uniform shape.

The semiconductor industry is rapidly growing, and efforts are being made to implement integrated circuits with higher device densities. In order to planarly reduce the area occupied by a unit cell and integrate a larger number of devices within a limited area, a nanoscale line width (CD: Critical Dimension) of several nm to several tens of nm or Various techniques have been tried to implement a structure of fine patterns having a pitch.

When a micropattern of a semiconductor device is formed by relying solely on photolithography technology, the wavelength and optical system of the exposure light source used in the lithography equipment are limited by the image resolution that can be provided and the image resolution Due to the restrictions of , there are restrictions in forming fine patterns. In order to overcome this limitation of exposure resolution and image resolution limitation, for example, a spacer patterning technology (SPT) or a double patterning technology (DPT) has been tried.

The present application intends to present a method of forming a fine pattern in which primary patterns are formed through a photolithography process, and a secondary pattern is generated between the primary patterns to multiply the patterns.

One aspect of the present application provides a method comprising: forming pillars on a lower layer; Partial portions of a spacer layer covering sidewalls of the pillars abut against each other to provide first interstitial spaces having laterally concave cleavage shapes in a central portion between the pillars ( spacer) forming a layer; and forming a healing layer of a polymer material on the spacer layer to provide a second interspace in the first interspace by filling the trough-shaped portion of the first interspace. A method of forming a fine pattern is presented.

Another aspect of the present application includes the steps of forming pillars (pillars) on the lower layer; forming a spacer layer covering sidewalls of the pillars and providing first interstitial spaces in a central portion between the pillars; and forming a healing layer of a polymer material for gently smoothing the profile of the sidewall surface on the sidewall surface of the spacer layer; do.

One aspect of the present application provides the steps of: forming pattern structures having first interspaces therebetween having concave cleavage shapes on the sidewalls on the lower layer; and forming a healing layer of a polymer material on the sidewalls of the pattern structures to provide a second interspace in the first interspace by filling the valley shapes. present

According to embodiments of the present application, in the present application, primary patterns are formed by a photolithography process, and a polymer healing layer is formed on a sidewall of the primary pattern, and the primary patterns are arranged A method of forming a fine pattern can be proposed so that the shape of the secondary pattern generated therebetween matches the shape of the primary pattern.

1 to 16 are views illustrating a pattern forming method according to an example.
17 is a view showing a polymer chain forming a healing layer according to an example.
18 is a view showing a surface reactive group of a spacer layer according to an example.
19 is a view showing grafting of a polymer chain according to an example.
20 is a view showing a process of forming a grafting layer according to an example.
21 is a diagram illustrating a process of forming a healing layer according to an example.
22 is a diagram illustrating an entanglement movement of polymer chains according to an example.
23 is a diagram illustrating a process of removing non-entangled polymer chains according to an example.

The terms used in the description of the examples of the present application are terms selected in consideration of functions in the presented embodiment, and the meaning of the terms may vary depending on the intention or custom of a user or operator in the technical field. The meanings of the terms used when specifically defined in this specification follow the defined definitions, and in the absence of a specific definition, they may be interpreted as meanings commonly recognized by those skilled in the art. In the description of the examples of the present application, descriptions such as "first" and "second", "top" and "bottom or lower" are for distinguishing members, limiting the members themselves or specifying a specific order It is not used to mean, but refers to a relative positional relationship and does not limit a specific case in which another member is introduced in direct contact with the member or at an interface therebetween. The same interpretation can be applied to other expressions describing the relationship between components.

Embodiments of the present application may be applied to implementing integrated circuits such as a DRAM device, a PcRAM device, or a ReRAM device. Also, the embodiments of the present application may be applied to a memory device such as SRAM, FLASH, MRAM, or FeRAM, or a logic device in which a logic integrated circuit is integrated.

Like reference numerals may refer to like elements throughout. The same or similar reference signs may be described with reference to other drawings, even if not mentioned or described in the drawings. In addition, although reference numerals are not indicated, descriptions may be made with reference to other drawings.

1 and 2 show a step of forming an arrangement of pillars 200, and FIG. 2 shows a cross-section taken along line A-A' of the plan view of FIG. 1 .

1 and 2 , an arrangement of pillars 200 is formed on the lower layer 130 . The pillar 200 may be formed in a partition pattern to which a spacer is to be attached to the sidewall. The partition pattern may be a pattern formed through a photolithography process. The partition pattern may be formed in the shape of the pillar 200, but in some cases, the partition pattern may be formed as a line pattern extending long enough to provide a shape in which spaces and lines are repeated. have. Alternatively, the partition pattern may be formed in a pattern providing a hole or a plurality of holes. A device isolation structure of a semiconductor device, a bit line contact (BLC) in a DRAM device, or a resistance change memory device such as a phase change memory (PCM) device ), it may be required to arrange closely and uniformly repeating hole patterns, and the pillar patterns are primary patterns that are preliminary patterns for forming some holes constituting the arrangement of these holes. can be formed with

The pillars 200 may be formed to have a circular shape when viewed in a plan view. In some cases, the pillars 200 may be deformed to have an elliptical shape that is laterally elongated in one direction. As shown in FIG. 1 , recently neighboring pillars 200 may be arranged to form a quadrangle when viewed in a plan view. In some cases, the recently neighboring pillars 200 may be arranged in a hexagonal shape. Alternatively, the recently neighboring pillars 200 may be arranged to form a triangle. The pillar 200 may have a shape extending substantially vertically from the lower layer 130 .

The lower layer 130 is a layer formed on the substrate 110 and may be made of a layer of a material different from that of the pillar 200 . When the pillar 200 is formed to include the first material, the lower layer 130 may be formed to include a second material different from the first material. A patterning target layer 120 , which is a target layer to be finally patterned, may be formed between the lower layer 130 and the substrate 110 . The substrate 110 may include a semiconductor layer on which an integrated circuit is to be integrated. The substrate 110 may be a silicon substrate or a wafer.

The lower layer 130 may be a layer to be patterned using a hard mask or an etch mask in semiconductor manufacturing technology. The patterning target layer 120 may be an interlayered dielectric layer (ILD) or an intermetal dielectric layer (IMD). The patterning target layer 120 may be a metal layer or a conductive layer for interconnection. The patterning target layer 120 may be a template for providing a shape for another patterning or a layer for a damascene mold. The patterning target layer 120 or the lower layer 130 may be a layer in which layers of different materials are stacked in multiple layers to form a multi-layered hard mask system. The patterning target layer 120 may be a semiconductor substrate or a semiconductor layer. The patterning target layer 120 may be formed of, for example, a dielectric layer including a silicon oxide layer such as a TEOS layer having a thickness of about 2200 Å. The lower layer 130 may include an amorphous spin-on carbon layer (SOC) having a thickness of approximately 730 Å to 1000 Å. The lower layer 130 may further include a silicon oxynitride (SiON) layer having a thickness of about 300 to 350 Å on the spin-on carbon layer (SOC).

An amorphous carbon layer such as a spin on carbon (SOC) layer having a thickness of about 700 to 800 Å may be formed on the lower layer 130 as a layer for forming pillars. The pillar layer may further include a silicon oxynitride (SiON) layer formed on the amorphous carbon layer or the spin-on carbon layer.

An arrangement of the pillars 200 may be formed by patterning the pillar layer by a patterning process accompanying a photolithography process. A photoresist layer (not shown) is formed on the pillar layer for a photolithography process, and a photoresist pattern (not shown) is formed by performing selective exposure and development using a photomask (not shown). can be formed An antireflective coating (ARC) that covers the pillar layer under the photoresist layer may be formed to suppress diffuse reflection during exposure. The photoresist pattern may be used as an etch mask for providing the arrangement pattern of the pillars 200 shown in FIG. 1 to the pillar layer. An arrangement of the pillars 100 may be formed on the lower layer 130 by selectively removing some portions of the pillar layer exposed to the photomask. In this case, the etching mask including the photoresist pattern may be formed by exposing and developing the photoresist layer at a time without using a double patterning technique that is complicated and requires a plurality of photolithography processes. .

The process of forming the pillars 200 in a pattern arrangement erected on the lower layer 130 is exemplified when a photolithography process is applied, but as long as the pillars 200 have a feature that is substantially vertically erected on the lower layer 130 ( 200) may be formed by various patterning methods. For example, a template is formed that provides concave hole-shaped arrangements in which the pillars 200 are to be formed, the pillars 200 are formed in a shape to fill the holes, and then the template is removed. An arrangement of the pillars 200 may also be formed.

3 and 4 show a step of forming a guide spacer layer 300 , and FIG. 4 shows a cross-section taken along line AA′ in the plan view of FIG. 3 .

3 and 4 , a spacer layer 300 covering sidewalls of the pillars 200 may be formed. The spacer layer 300 may include a third material different from the material constituting the pillar 200 , for example, silicon oxide, polysilicon, or silicon nitride. The spacer layer 300 may be formed by depositing a dielectric material having an etch selectivity with the pillar 200 and the lower layer 130 , for example, an ultra low temperature oxide (ULTO) layer.

The spacer layer 300 may extend to cover sidewalls of the pillars 200 and to cover the top surface of the pillars 200 . The spacer layer 300 may extend to cover sidewalls of the pillars 200 and to cover the exposed upper surface portion of the lower layer 130 exposed by the pillars 200 . The spacer layer 300 may be grown from sidewalls of the pillars 200 and laterally connected to each other to have a lattice shape.

A first interstitial space 310 may be formed as a first opening in the middle of the lattice formed by the spacer layer 300 . The spacer layer 300 may be formed as a guide for guiding the first interspace 310 between the pillars 200 . The first interspace 310 may be formed as a space surrounded by portions of the spacer layer 300 covering sidewalls of the pillars 200 . The first interspace 310 may be located in the middle of the pillars 200 that are closest to each other, for example, four pillars 200 . The spacer layer 300 may be formed in a lattice shape that opens the first interspaces 310 between the pillars 200 .

The first interspace 310 is positioned at the center of the four pillars 200 surrounding the first interspace 310 , and the first interspace 310 is substantially separated from the four neighboring pillars 200 . They may be located at equal intervals. Since the first interspace 310 is a space formed by meeting portions of the spacer layer 300 grown from the four pillars 200 , it may have a planar shape different from the circular shape that may be the planar shape of the pillars 200 . have. For example, the first interspace 310 may have a planar shape of a morning star having a shape of four horns by four cleavages 310C. The valley 310C of the first interspace 310 may have a crack shape at a point where portions of the spacer layer 300 grown from sidewalls of different pillars 200 meet each other. Portions of the spacer layer 300 covering sidewalls of the four pillars 200, respectively, grow in a longitudinal direction during the formation process and come into contact with each other, so that a first interspace 310 between the portions of the spacer layer 300 is formed. can be formed. Concave valleys 310C may extend substantially vertically at a boundary where portions of the spacer layer 300 covering sidewalls of the four pillars 200 contact each other. The first interspace 310 may be surrounded by portions of the spacer layer 300 covering sidewalls of the four pillars 200 . Since the planar shape of the first interspace 310 is substantially different from the planar shape of the pillars 200 , the planar shape of the first interspace 310 is compensated to be close to the circular shape that is the planar shape of the pillars 200 . Giving process may be required.

5 and 6 show a step of forming a healing layer (healing layer: 400), Figure 6 shows a cross-section taken along the line A-A' in the plan view of FIG.

As shown in FIGS. 5 and 6 , the concave trough 310C of the first interspace 310 is filled on the spacer layer 300 to fill the second interspace 311 in the first interspace 310 with a second The healing 400 layer formed by the opening may be formed. The healing layer 400 preferentially fills the concave trough 310C of the first interspace 310, and has a more gentle outline of the planar shape of the first interspace 310. can be alleviated. The healing layer 400 may preferentially fill the concave valley 310C of the first interspace 310 so that the planar shape of the second interspace 311 has a substantially circular shape.

In order to form the healing layer 400 , polymeric chains 400P as shown in FIG. 17 may be applied on the surface of the spacer layer 300 by spin coating. 17 illustrates a polymer chain 400P forming a healing layer (400 in FIG. 5 ) according to an example. One polymer or polymer chain 400P is a chain part 410, which is a body including a carbon chain, and a head functional group coupled to one end of the chain part 410 (head functional group: R _h , 420) , may include a terminal group (X, 430) coupled to the other end of the chain portion (410). The head reactor 420 is a surface reactor 301N that may be present on the surface 300S of the patterned structure 300P including the spacer layer (300 of FIG. 5) as shown in FIG. 18, for example, silicon oxide (SiO ₂ ). ) may include a hydroxyl (OH-) reactive group capable of reacting with a hydrogen (H+) reactive group present on the surface. The head reactive group 420 of the polymer chain 400P reacts with the surface reactive group 301N of the surface 300S of the pattern structure 300P, as shown in FIG. 19 , to convert the polymer chain 400P into the pattern structure 300P. ) may cause a grafting reaction to bond the surface 300S. 19 shows the grafting reaction of the polymer chain 400P. For example, the hydrogen (H+) reactor adsorbed on the silicon oxide of the surface 300S of the pattern structure 300P reacts with the hydroxyl (OH-) reactor, which may be the head reactor 420 of the polymer chain 400P, to form a polymer The chain 400P and silicon oxide (SiO ₂ ) may be connected by covalent bonding. At this time, water (H ₂ O) may be generated as a by-product.

As such, the polymer chain 400P that can be covalently grafted to the silicon oxide is the head reactor 420, a silane group, an Orser group, an amine group, an alkyne or an alkane. It may include an alkyne or alkane group, a catechol group, a carboxylate group, a phosphonate group, and the like. The terminal end may consist of an inactive group that does not participate in the graft reaction. As for each of the polymer chains 400P, only a portion of each head reactor 420 participates in the grafting reaction, so as shown in FIG. 20, the polymer chain 400G grafted to stand on the surface of the pattern structure 300P is A grafting layer 400L aligned or oriented side by side may be formed. 20 shows a step of forming the grafting layer 400L. The grafting layer 400L may form a part of the healing layer (400 in FIG. 5 ). The grafted polymer chains 400G are to be grafted onto the surface 300S in a direction substantially perpendicular to the surface of the spacer layer (300 in FIG. 5) or the surface 300S of the pattern structure (300P in FIG. 20). can

The polymer chains (400P of FIG. 17 ) may be applied on the spacer layer ( 300 of FIG. 6 ) in a state of a coating solution dispersed in a solvent. As the solvent, an organic solvent may be used. Before applying the coating solution in which the polymer chains 400P are dispersed on the spacer layer 300 , a surface treatment process of treating the surface of the spacer layer 300 may be performed. The surface treatment process may be performed as a thermal annealing process for removing moisture that may exist on the surface of the spacer layer 300 . In this annealing process, the surface roughness of the spacer layer 300 may also be annealed to be more evenly relaxed. The thermal annealing process may be performed in a low oxygen atmosphere (low O ₂ ), for example, a vacuum branch or an inert gas atmosphere. The thermal annealing process may be performed as a process of annealing at a temperature range of approximately 100°C to 400°C. Such a surface treatment process may be performed as a surface treatment process using plasma. By treating the surface of the spacer layer 300 with oxygen plasma, grafting efficiency of the polymer chain 400P may be increased.

After coating the coating solution in which the polymer chains (400P of FIG. 17) are dispersed on the spacer layer (300 of FIG. 6), a process of baking may be performed. In the baking process, as described with reference to FIGS. 19 and 20 , the polymer chain 400P is grafted onto the surface 300S of the pattern structure (300P in FIG. 19 ) or the surface of the spacer layer 300 . This may be performed to form the grafting layer 400L of the polymer chains 400G. The baking process may be performed in a temperature range of approximately 140° C. to 250° C. in order to induce a covalent bond reaction for the graft reaction.

During the baking process, when the polymer chains (400G in FIG. 20) are grafted to the surface 300S of the pattern structure (300P in FIG. 19) to form the grafting layer 400L, the non-grafting polymer chains 400U are polymer chains. (400G of FIG. 20 ) may float on the grafting layer 400U in an unreacted state without reacting with the surface 300S of the pattern structure (300P of FIG. 19 ). The non-grafting polymer chains 400U can roughly behave in two types of behavior. The behavioral shape of the non-grafting polymer chains 400U may vary according to a spatial location in which the non-grafting polymer chains 400U are positioned.

21 is a plan view illustrating an enlarged portion of the healing layer 400 of FIG. 5 . Referring to FIG. 21 together with FIG. 5 , when the grafting layer 400L is formed on the surface of the spacer layer 300 , a first portion of the first interregion adjacent to the valley 310C of the first interregion 310 . The region 310B may be a narrow space compared to the region outside the valley 310C or the first region including the middle portion of the first region 310 and the second part 310A. The region outside the valley 310C or the second portion 310A of the first interregion 310A that is the middle portion of the first interregion 310 may be a relatively wide space.

In the first portion 310B of the first interspace region, which is a relatively narrow spatial region, the non-grafted polymer chains 400U are entangled by an entanglement movement, as shown in FIG. 22 , the grafted polymer chains 400G. ) and can be entangled with 22 shows the entanglement movement of polymer chains. As shown in FIGS. 21 and 22 , the entangled polymer chains 400E are entangled with the grafted polymer chains 400G to form an intermixed state, and the first region between the first portion 310B. Anchoring within it may limit movement. The entanglement layer 400EL formed by the entangled polymer chains 400E may serve to substantially fill the valley 310C of the first interregion 300 .

In the first interspace region, which is a relatively large spatial region, the second portion 310A, the movement of the ungrafted polymer chain 400U is relatively free, and is not entangled or entangled with each other due to the spatial margin, Non-entangled, ungrafted polymer chains 400EU may be present at a relatively low density. The entangled polymer chains 400E bound in the first inter-region first portion 310B may exist in a relatively high density. The difference in density of the ungrafted polymer chains 400U existing between the first inter-region first portion 310B and the first inter-region second portion 310A is, in each region, the ungrafted polymer chains 400U. ) may cause a difference in solubility. The entangled polymer chains 400E, which are entangled with a relatively high density, are entangled with the graft polymer chains 400G and are tied to them, whereas the non-entangled polymer chains 400EU are not entangled with each other, Non-entangled ungrafted polymer chains (400EU) may exhibit relatively high solubility in solvents.

21 and 22, a grafting layer 400L is formed by grafting of polymer chains (400G in FIG. 22), and also entanglement by entanglement movement of entangled polymer chains (400E in FIG. 22). After forming the layer 400EL, as shown in FIG. 23 , the ungrafted and unintended polymer chains (400EU in FIG. 21 ) using the solubility difference are selectively removed. By removing the ungrafted and non-intinkled polymer chains (400EUs in FIG. 21 ) by taking advantage of the relatively low solubility of the ungrafted and non-intinkled polymer chains (400EUs in FIG. 21 ) in organic solvents, the first A healing layer 400 providing the second interspace 311 as the second opening may be formed in the first interspace 310 . An organic solvent may be used as the solvent for removing the ungrafted and non-intinkled polymer chains (400EU in FIG. 21 ). Solvents include organic solvents such as N-butyl acetate (nBA), propylene glycol methyl ether acetate (PGMEA), methyl methoxy propionate (MMP) thinner, and a mixture of PGMEA and PGME. can be used

As shown in FIGS. 23 and 5 , the healing layer 400 can fill the valley 310C of the first interspace 310 , so that the planar shape of the second interspace 311 is that of the pillar 200 . It can be induced to approximate a planar shape or to have substantially the same shape. The healing layer 400 deforms that the planar shape of the first interspace 310 has a different shape from the planar shape of the pillar 200, which is the primary pattern, so that the planar shape of the second interspace 311 is the pillar ( 200) by the planar shape and the trough 310C, it can be transformed into a shape of substantially the same shape, for example, a circle.

The healing layer 400 may function to gently smooth the profile of the sidewall surface of the spacer layer 300 . The healing layer 400 may fill the grooves or valleys existing on the surface of the spacer layer 300 to make a smooth surface or reduce surface roughness. In addition, when the sidewall surface of the spacer layer 300 is uneven in the lateral direction, the healing layer 400 may act to alleviate the unevenness.

7 to 10 show the steps of forming the third interspace 501 in the spacer layer 300 using the healing layer 400, and FIGS. 8 and 10 are plan views of FIGS. 7 and 9, respectively. Sections along the A-A' cutting line are shown.

As shown in FIGS. 7 and 8 , anisotropic etching or spacer etching is performed on the healing layer 400 , and the sidewall of the spacer layer 300 attached laterally on the sidewall of the pillar 200 . A healing layer pattern 400A positioned thereon is formed. A portion of the healing layer 400 is removed by anisotropic etching to expose the first portion 300T of the spacer layer 300 covering the top surface of the pillar 200, and at the same time, the top surface of the lower layer 130 is covered. The second portion 300L of the spacer layer may be exposed. The healing layer pattern 400A may remain to substantially cover the sidewall portion of the spacer layer 300 and may have a shape attached to the spacer layer 300 in the same shape as another spacer.

9 and 10 , using the healing layer pattern 400A as an etch mask, the spacer layer first portion 300T and the second portion 300L exposed by the healing layer pattern 400A are selectively selected Anisotropic etching to remove or spacer etching may be performed. Accordingly, a portion of the upper surface 200T of the pillar 200 may be exposed to the healing layer pattern 400A. In the pattern of the spacer layer 300 , the upper surface portion 300M may expose the upper surface 200T of the pillar 200 . A portion of the surface 130SA of the lower layer 130 may be exposed to the healing layer pattern 400A. By an etching process using the healing layer pattern 400A as an etching mask, the second interspace 311 may extend into the third opening shape or the third interspace 501 penetrating the spacer layer 300 . . A portion 300F of the spacer layer 300 covered by the healing layer pattern 400A may remain as a pattern portion providing a shape of the third interspace 501 .

11 and 12 show the steps of removing the pillars 200 , and FIG. 12 shows a cross-section taken along line AA′ in the plan view of FIG. 11 .

11 and 12, using the pattern of the spacer layer 300 patterned by the healing layer pattern (400A in FIG. 10) as an etch mask, the pillars 200 exposed to the spacer layer 300 are selectively selected removed with By removing the pillars 200 , the spacer layer 300 may provide fourth interspaces 502 in the space where the pillars 200 are located. In the fourth interspace 502 , the other part 130SB of the surface of the lower layer 130 may be exposed. The pattern of the spacer layer 300 may have a lattice shape providing openings 500 or holes as windows. The fourth opening provided by the fourth interspace 502 may form an arrangement of openings 500 or holes together with the third opening provided by the third interspace 501 .

13 and 14 show the steps of forming the first through-holes 550, and FIG. 14 shows a cross-section taken along line A-A' in the plan view of FIG.

13 and 14 , the surface portions 130SA and 130SB of the lower layer 130 exposed to the openings 500 may be selectively removed using the pattern of the spacer layer 300 as an etch mask. . The first through hole 550 that substantially penetrates the lower layer 130 may be formed by selective etching. The first through-holes 550 may be formed in a shape conforming to the planar shape of the fourth interspace 502 and the third interspace 501 . The first through-holes 550 may have a shape in which the openings 500 are extended. A portion of the surface 120S of the patterning target layer 120 may be exposed at the bottom of the first through hole 550 . After the pattern of the lower layer 130 having the first through holes 550 is formed, the pattern of the spacer layer 300 may be selectively removed.

15 and 16 show a step of forming the second through-holes 590, and FIG. 16 shows a cross-section taken along line A-A' in the plan view of FIG. 15 .

15 and 16 , a second through hole 590 extending from the first through hole ( 550 in FIG. 14 ) may be formed to penetrate the patterning target layer 120 . Using the pattern of the lower layer 130 having the first through-holes 550 as an etching mask, a portion of the surface (120S of FIG. 14 ) of the patterning target layer 120 exposed at the bottom of the first through-hole 550 is selectively selected can be etched with A second through hole 590 in which the first through hole 550 extends to the patterning target layer 120 may be formed by selective etching. Thereafter, the pattern of the lower layer 130 may be selectively removed.

The arrangement of the second through holes 590 may be used to form connection contacts in an interconnection structure in a memory device such as a DRAM or a logic device. . Alternatively, the arrangement of the second through holes 590 may be used to form pillar electrodes or cylinder electrodes in a capacitor structure of a DRAM device. The arrangement of the second through-holes 590 may be used to form a cross-point arrangement type memory device.

According to the present application, it is possible to form a nanoscale structure or a nanostructure on a large-area substrate. The nanostructure can be used for manufacturing a polarizing plate including a wire grid, forming a reflective lens of a reflective liquid crystal display device, and the like. The nanostructure can be used not only to manufacture an independent polarizer, but also to form a polarizer integral with the display panel. For example, it can be used in a process of directly forming a polarizer on an array substrate including a thin film transistor or a color filter substrate. Nanostructures are a template for manufacturing nanowire transistors, memories, a template for electrical and electronic components such as nanostructures for nanoscale wire patterning, a template for manufacturing catalysts for solar cells and fuel cells, etching masks and organic diodes (OLEDs). ) can be used as a mold for cell manufacturing and a mold for gas sensor manufacturing.

The method and structures according to the present application described above may be used in the manufacture of an integrated circuit chip. The resulting integrated circuit chip may be distributed by the manufacturer in raw wafer form, bare die or package form. The chip may be provided in the form of a single chip package or a multi-chip package chip package. Also, one chip may be integrated into another integrated circuit chip or integrated into a separate circuit element. One chip may be integrated to form another signal processing device as a component in the form of an intermediate product such as a mother board or an end product. The end product can be any product including an integrated circuit chip, from a toy or low-performance application to a high-performance computer product, including a display or keyboard or other input device. And it may be a product including a central processing unit (central processor).

As described above, the embodiments of the present application are illustrated and described with drawings, but this is for explaining what is intended to be presented in the present application, and is not intended to limit what is intended to be presented in the present application to the detailed shape presented. Various other modifications will be possible as long as the technical idea presented in the present application is reflected.

200: pillar,
300: spacer layer;
400: Healing layer.

Claims (20)

forming pillars on the lower layer;
Partial portions of a spacer layer covering sidewalls of the pillars abut against each other to provide first interstitial spaces having laterally concave cleavage shapes in a central portion between the pillars ( spacer) forming a layer; and
Forming a healing layer of a polymer material on the spacer layer to provide a second interspace in the first interspace by filling the trough-shaped portion of the first interspace;
The step of forming the healing layer is
applying a coating solution containing polymer chains on the spacer layer;
annealing the spacer layer surface to bond the polymer chains; and
and removing unbound polymer chains from among the polymer chains. ◈Claim 2 was abandoned when paying the registration fee.◈ According to claim 1,
The space between the first
A method of forming a fine pattern that covers sidewalls of the pillars and is surrounded by some portions of the spacer layer that are in lateral contact with each other. ◈Claim 3 was abandoned when paying the registration fee.◈ According to claim 1,
The healing layer
The method of forming a fine pattern in which the second interspace is formed to have a planar shape substantially the same as a planar shape of the pillar. delete ◈Claim 5 was abandoned when paying the registration fee.◈ According to claim 1,
The annealing step
annealing the polymer chains to induce a reaction in which the polymer chains are grafted and entangled on the surface of the spacer layer;
The step of removing the unbound polymer chains is
and removing unreacted polymer chains that do not participate in the grafting and entanglement reactions. ◈Claim 6 was abandoned when paying the registration fee.◈ 6. The method of claim 5,
The entangled polymer chains
A method of forming a fine pattern to fill the valley portion of the first interspace. ◈Claim 7 was abandoned when paying the registration fee.◈ According to claim 1,
The polymer chain is
A method of forming a fine pattern having a functional group reacting with the surface of the spacer layer at one end. ◈Claim 8 was abandoned when paying the registration fee.◈ 8. The method of claim 7,
The annealing step is
A method of forming a fine pattern in which the surface reactive group and the reactive group present on the surface of the spacer layer form a covalent bond. ◈Claim 9 was abandoned at the time of payment of the registration fee.◈ According to claim 1,
Before the step of forming the healing layer
The method further comprising the step of performing a surface treatment annealing process on the surface of the spacer layer. ◈Claim 10 was abandoned when paying the registration fee.◈ According to claim 1,
the spaces between the second
The method of forming a fine pattern further comprising the step of extending to penetrate the lower layer. ◈Claim 11 was abandoned when paying the registration fee.◈ 11. The method of claim 10,
before the step of extending the second interspaces
The method further comprising forming third interspaces by selectively removing the pillars. forming pillars on the lower layer;
forming a spacer layer covering sidewalls of the pillars and providing first interstitial spaces in a central portion between the pillars; and
forming a healing layer of a polymer material for gently smoothing a profile of the sidewall surface on the sidewall surface of the spacer layer;
The step of forming the healing layer is
applying a coating solution containing polymer chains on the spacer layer;
annealing the spacer layer surface to bond the polymer chains; and
and removing unbound polymer chains from among the polymer chains. ◈Claim 13 was abandoned when paying the registration fee.◈ 13. The method of claim 12,
The healing layer
A method of forming a fine pattern by filling the grooves or valleys existing on the surface of the spacer layer to create a smooth surface. forming pattern structures having first interspaces therebetween having concave cleavage shapes on the sidewalls on the lower layer; and
Forming a healing layer of a polymer material that provides a second interspace in the first interspace by filling the valley shapes on the sidewalls of the pattern structures;
The step of forming the healing layer is
applying a coating liquid containing polymer chains on the sidewalls of the pattern structures;
annealing so that the surface of the pattern structures and the polymer chains are bonded; and
and removing unbound polymer chains from among the polymer chains. delete ◈Claim 16 has been abandoned at the time of payment of the registration fee.◈ 15. The method of claim 14,
The annealing step
annealing the polymer chains to induce a reaction in which the polymer chains are grafted and entangled on the surface of the pattern structures;
The step of removing the unbound polymer chains is
and removing unreacted polymer chains that do not participate in the grafting and entanglement reactions. ◈Claim 17 was abandoned when paying the registration fee.◈ 17. The method of claim 16,
The entangled polymer chains
A method of forming a fine pattern to fill the valley portions located on the sidewalls of the pattern structures. ◈Claim 18 was abandoned when paying the registration fee.◈ 15. The method of claim 14,
The polymer chain is
A method of forming a fine pattern having a functional group reacting with the surface of the spacer layer at one end. ◈Claim 19 was abandoned at the time of payment of the registration fee.◈ 19. The method of claim 18,
The annealing step is
A method of forming a fine pattern in which a surface reactive group and the reactive group present on the surface of the pattern structures are carried out to form a covalent bond. ◈Claim 20 was abandoned when paying the registration fee.◈ 15. The method of claim 14,
Before the step of forming the healing layer
The method further comprising the step of performing a surface treatment annealing process on the surface of the pattern structures.

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