KR102391363B1 - Vaporizer for semiconductor thin film depositing - Google Patents

Abstract

The present invention relates to a vaporizer for thin film deposition, capable of maximizing the efficiency of vaporization of a reaction solution during a thin film deposition procedure for film formation on a substrate constituting a semiconductor. In accordance with the present invention, the vaporizer for thin film deposition is provided to vaporize droplets sprayed from a sprayer into a body to supply the droplets to a position for semiconductor thin film deposition through a discharge pipe. The body includes: an inner pipe having a space of a form opened downward to accept the droplets; a first heating part installed in the inner pipe to emit heat for heating; an outer pipe installed with a space separated from an outer side of the inner pipe; a second heating part installed on the outer pipe to emit heat for heating; and an outlet provided on an outer side of the outer pipe, and leading the droplets moved to the bottom surface of the outer pipe through the space, to be discharged through the outlet connected with the discharge pipe after being moved to the separated space.

Description

Vaporizer for semiconductor thin film deposition

The present invention relates to a vaporizer for depositing a semiconductor thin film, and more particularly, to a vaporizer for depositing a thin film that maximizes the vaporization efficiency of a reaction solution in a thin film deposition process for forming a film on a substrate constituting a semiconductor.

In general, a semiconductor device manufactures a structure having a desired shape by stacking a plurality of processes on a semiconductor wafer used as a substrate. As a representative example, a semiconductor memory device, a liquid crystal display device, an organic light emitting device, etc. are manufactured by performing a plurality of semiconductor processes on a substrate and stacking structures of a desired shape.

Such a semiconductor manufacturing process includes a film formation process, a photolithography process, an etching process, and the like, and the process is being performed in a reaction chamber in which an optimized environment is created.

Among them, the film forming process is performed to form a film on the substrate, the oxidation process is performed to form an oxide film on the substrate or to oxidize the film formed on the substrate, and the photolithography process is A film formed on the substrate is performed to form desired patterns, and an etching process is performed to remove the thin film in a selected area.

In the above-described semiconductor process, a manufacturing process is performed using a process gas, and the process gas is produced by vaporizing a liquid source and mixing it with a carrier gas. will be needed

The vaporizer applied to semiconductor manufacturing supplies the vaporized source to the inside of the reaction chamber by changing the liquid source to the gaseous state. must be supplied to the reaction chamber.

However, when the vaporization efficiency of the source is low in the vaporizer, the non-vaporized source adheres to the inner wall of the apparatus or to the filter, which may cause not only the life of the apparatus but also product defects in the semiconductor manufacturing process.

For this purpose, a method of vaporizing the liquid source by decompression is used, but only a part of the liquid source is vaporized only by vaporizing the liquid source under reduced pressure. There is a problem that needs to be enlarged.

In addition, due to the complexity and size of the vaporizer, there is a problem in that the source gas vaporized in the vaporizer is liquefied again while flowing through the complicated flow path in the vaporizer.

In addition, when it is necessary to vaporize a large-capacity source, since the vaporizer becomes more complex and enlarged, the above problems are further aggravated, and the design of the vaporizer is complicated and the manufacturing cost is increased.

On the other hand, in order to solve the above problems, a vaporizer for semiconductor equipment has been proposed in Patent Publication No. 10-2016-0026285. In the prior art, a first vaporization unit, a flow space for allowing the gas introduced from the first vaporization unit to flow, is formed, and the inlet and outlet of the flow space are spaced apart from each other at regular intervals in the lateral and vertical directions. It is composed of a vaporization unit and a discharge unit through which the gas is discharged from the second vaporization unit to the outside.

Looking at the vaporization process, the liquid source and carrier gas are mixed in the first vaporization unit and introduced into the second vaporization unit, vaporized through the second vaporization unit and discharged to the reaction chamber through the discharge unit, and the mixed gas in the second vaporization unit It is a technology for discharging by preventing the flow of water from stagnation and re-liquefaction.

However, in the first vaporization unit, as the liquid source and carrier gas are mixed and moved sequentially in the second vaporization unit at the same time, the vaporization can be sequentially enhanced. As it moves along a constant speed and direction, there is a problem that vaporization occurs irregularly, and thus there has been a problem that product defects occur.

In addition, the inert gas used as the carrier gas is bubbled while passing through the second vaporization unit, and thus the source, which is a reaction solution, is vaporized. When supplied to the chamber, there is a problem in that the amount of the reaction gas cannot be precisely maintained and controlled.

In other words, there has been a problem in that the filter is clogged due to adhesion to the inner wall or irregular movement in the case of a source that does not vaporize stably as it moves continuously and repeatedly at a constant speed.

On the other hand, in order to prevent condensation of the droplets sprayed from the atomizer, the heater installed on the body of the vaporizer is installed outside the body, and the temperature of the droplets sprayed from the atomizer is maintained at an appropriate temperature, but the temperature inside the body is outside the body. There has been a problem in that the droplets injected from the atomizer are re-condensed inside the body of the vaporizer because it is relatively low.

The background or prior art described herein is information possessed by the present inventor or acquired in the process of deriving the present invention, and is only intended to help understand the technical meaning of the present invention, This does not mean that the technology is widely known in the technical field.

Accordingly, the present inventors have developed a new structure that improves the vaporization rate of the source applied to the semiconductor manufacturing process and at the same time simplifies the structure, from the idea of solving the technical limitations and problems that are difficult to simplify the structure while comprehensively considering the above. The present invention was created as a result of incessant research while making every effort to develop a carburetor.

Therefore, the technical problem and object to be solved by the present invention is to provide a high-efficiency vaporizer that allows the heater installed in the vaporizer to be discharged by maintaining an appropriate temperature to prevent re-condensation of droplets sprayed from the atomizer through structural improvement of the vaporizer is in doing

Here, the technical problems and objects to be solved by the present invention are not limited to the technical problems and objectives mentioned above, and other technical problems and objects not mentioned will be clearly understood by those skilled in the art from the following description.

A specific means according to the present invention for achieving the object and solving the technical problem as described above is a vaporizer that stably vaporizes the droplets injected into the body from the atomizer and supplies it to the position for depositing the semiconductor thin film through the discharge pipe. In the above, the body, an inner tube having a downwardly open space for accommodating droplets, a first heating unit installed in the inner tube to radiate heating heat, and a space away from the outer side of the inner tube, An outer tube installed in the outer tube, a second heating unit installed in the outer tube to radiate heating heat, and a droplet provided outside the outer tube and connected to the discharge tube to sequentially move through the space and the space apart to start the discharge port.

A third heating unit may be installed on the bottom surface of the body to heat the droplets that are moved downward through the space and then are guided to the separation space.

The inner tube is a double tube in the form of first and second tubes, and a heating room isolated from the separation space is formed therein, and the first heating unit may be installed in the heating room.

The first heating unit may be made of a heating coil and coupled to the outer wall of the first tube in a spiral shape may be applied.

Preferably, the discharge port is positioned above 1/3 of the height of the outer tube.

According to an embodiment according to the present invention, a high-efficiency vaporizer that maintains uniform particles and a uniform temperature by heating heat generated from the inside and outside of the body of the vaporizer and the droplets supplied to the vaporizer by mixing through the atomizer according to the embodiment of the present invention. can do.

The present invention, equipped with the means and configuration for achieving the above object and solving the technical problems, provides uniform heating heat to the droplets introduced into the vaporizer through the first to third heating parts, so that uniform particles and uniform There is an advantage in that a high-efficiency vaporizer can be obtained by maintaining the temperature and discharging in a state where vaporization efficiency is maximized.

Here, the effects of the present invention are not limited to the above-mentioned effects, and other effects not mentioned will be clearly understood by those skilled in the art from the description of the claims.

1 is a longitudinal cross-sectional view of a vaporizer for thin film deposition according to the present invention.
FIG. 2 is a cross-sectional view taken along line “BB” of FIG. 1 .

Since the present invention may have various changes and may have various forms, embodiments (or implementations) will be described in detail in the text. However, this is not intended to limit the present invention to the specific disclosed form, it should be understood to include all modifications, equivalents and substitutes included in the spirit and scope of the present invention.

The terminology used herein is used only to describe specific embodiments, and is not intended to limit the present invention. The singular expression includes the plural expression unless the context clearly dictates otherwise. In the present application, terms such as comprises or consists of are intended to designate that the features, numbers, steps, operations, components, parts, or combinations thereof described in the specification exist, but one or more other features It is to be understood that it does not preclude the possibility of the presence or addition of numbers, steps, operations, components, parts, or combinations thereof.

Unless defined otherwise, all terms used herein, including technical and scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. Terms such as those defined in commonly used dictionaries should be interpreted as having a meaning consistent with the meaning in the context of the related art, and should not be interpreted in an ideal or excessively formal meaning unless explicitly defined in the present application. does not

~1~, ~2~, etc. described in the present specification are only to be referred to to distinguish that they are different components, and are not limited to the order of manufacture, and their names in the detailed description and claims of the invention are may not match.

The present invention vaporizes the source and carrier gas mixed and supplied from the atomizer (A) as shown in FIGS. 1 and 2 to uniformly vaporize the thin film deposition that is supplied to the position for depositing the semiconductor thin film through the discharge pipe (T). It's about a carburetor for

The present invention, the body 100 constituting the vaporizer, the atomizer (A) coupled to the body 100 to mix the source and carrier gas and then spray into the body 100 in a droplet state, and the body ( 100) is composed of first to third heating units 120, 140, and 150 for maintaining the appropriate temperature.

The body 100 includes an inner tube 110 having a downwardly open space 112 for accommodating droplets, and a first heating unit 120 installed in the inner tube 110 to radiate heating heat; , an outer tube 130 installed to form a space 132 and spaced apart from the outside of the inner tube 110, and a second heating unit 140 installed in the outer tube 130 to radiate heating heat; It is provided on the outside of the outer tube 130 and consists of a discharge port 160 for discharging droplets that sequentially move through the space 112 and the spaced apart space 132 through the discharge tube (T).

And, the bottom of the body 100, that is, the bottom surface 170 of the outer tube 130, the upper floor space 172, after moving downward through the space 112 is guided to the separation space (132) A third heating unit 150 for heating the liquid droplets is installed.

In detail for each configuration, first, the inner tube 110 preferably has a cylindrical shape, and a heating room 110c is formed inside of the double tube body in the form of first and second tubes 110a and 110b, and the heating room The first heating unit 120 is installed inside (110c). And a sprayer (A) is installed at the upper end of the inner tube (110), and the droplets supplied from the sprayer (A) into the space (112) of the inner tube (110) are introduced in a sprayed form and open downward. get drunk

Next, the first heating unit 120 is formed in a shape in which a heating coil surrounds the outside of the inner tube 110 along the circumference, and when power is applied, the heating heat is radiated, and preferably the heating room 110c. The outer wall of the first tube (110a) is wrapped around the spiral shape in the coupled.

Accordingly, it is possible to prevent re-condensation of the sprayed droplets by dissipating heating heat to the droplets having a diffusion shape into the space 112 and being sprayed downward.

In the above, as the first heating unit 120 is formed of a heating coil and is provided in the form of being wound on the outside of the inner tube, it is possible to maintain a uniform temperature of the carburetor body 100 as well as, furthermore, the temperature is particularly There is an advantage in that temperature control according to the number of windings can be performed, such as increasing or decreasing the number of windings in the low or high portion. In particular, this temperature control according to the number of turns may have more meaning when the first heating unit 120 is configured together with the second heating unit 140 to be described later, which will be described in detail below.

In addition, in the above, the heating room (110c) is a space formed inside by the separation of the first pipe (110a) and the second pipe (110b), the heating room (110c) is filled with a fluid such as air or other gas, or It may be configured in a vacuum state.

Through the provision of the heating room 110c, the first heating unit 120 is located inside the heating room 110c, and thus the first heating unit 120 is connected to the first pipe 110a and the second pipe. (110b) is completely isolated from the outside and protected, and as a result, it is completely isolated from the droplet, so that damage due to corrosion can be prevented. In particular, the heating room 110c having a hollow structure secures a space for a temperature sensor (not shown) for measuring the temperature of the first heating unit 120, and is generally made of a metallic material with high thermal conductivity. In that it is possible to provide the effect of improving durability by buffering the rapid temperature change of the high inner tube 110, the heating room 110c is preferably configured in a hollow shape.

Next, the outer tube 130 preferably has a cylindrical shape, and has an inner diameter larger than the outer diameter of the inner tube 110 so that a space 132 is formed between the inner tube 110 and the outer tube 130 . to be able to be formed. The space 112 of the inner tube 110 and the space 132 of the outer tube 130 communicate with each other at the lower side of the body 100 .

And the second heating part 140 is made to radiate heating heat when power is applied with the same heating wire as the first heating part 120 , and is wrapped around and coupled to the outer side of the outer tube 130 in a spiral shape.

Through the configuration of the outer tube 130 and the second heating unit 140, this vaporizer is the first heating unit 120 of the inner tube 110 and the second heating unit 140 of the outer tube 130 It provides a double heated wire structure of This vaporizer is a direct vaporization type vaporizer for micro-droplet injection. In the existing direct vaporization vaporizer, the heater is installed only on the outside of the vaporizer. There was a problem of re-condensing without being vaporized. This vaporizer has a first heating unit 120 that is an internal heating wire and a second heating part 140 that is an external heating wire in which droplets sprayed through a double heating wire structure equipped with a heater inside as well. The vaporization efficiency was maximized by configuring it to flow between the

And the discharge port 160 is for supplying a droplet to a place for depositing a semiconductor thin film, and is provided on the outside of the outer tube 130 . Accordingly, when the droplets introduced into the space 112 are discharged through the discharge port 160 through the separation space 132, heating heat is dissipated to the droplets moving to the separation space 132 to maintain a uniform temperature.

It is preferable that the discharge port 160 be positioned above 1/3 of the height of the outer tube 130 . This is to ensure sufficient time for vaporization of the droplets. When the outlet 160 is provided at the bottom of the vaporizer, vaporization of the droplets cannot occur sufficiently, whereas when the outlet 160 is provided at the upper side, the ejected droplets While maintaining a uniform temperature by the first heating unit 120 and the second heating unit 140, the gas flows along the separation space 132 and sufficiently vaporizes until it reaches the discharge port 160 to produce a stable gas in the process process It can be supplied to the chamber. In the above, since the movement distance that must be secured for sufficient vaporization is the case where the discharge port 160 is provided at a position of 1/3 or more with respect to the height of the outer tube 130, the height of the discharge port 160 is provided at a position of 1/3 or more It is preferable to be

On the other hand, as described above, the droplets sprayed from the atomizer form a discharge line that moves to the separation space 132 through the space 112 . The third heating unit 150 moves while maintaining the temperature with the heating heat according to the heating wire.

That is, the sprayed droplets are sequentially moved through the space 112 forming the discharge line, the floor space 172, and the separation space 132 through the first, second, and third heating units 120, 140, and 150. It is discharged through the discharge port 160 while maintaining an appropriate temperature.

As can be seen in FIG. 1 , the third heating unit is preferably provided in the form of a spirally wound heating coil or in the form of a plurality of circular rings. In order to realize this, it is preferable that the winding degree of the heating coil (spiral type) or the spacing of each ring (ring type) have the same spacing.

On the other hand, as shown in Fig. 1, the body has an upper body having an inlet through which droplets are introduced, and a lower body having the space 112, the floor space 172, the separation space 132, and the discharge port 160 formed therein. may include, and the inner tube 110 may be provided on the upper body and the outer tube 130 may be provided on the lower body.

The powder composition of the upper body and the lower body provides the ease of manufacture of the present vaporizer by allowing each body to be manufactured in the form of assembly after prefabrication. For this purpose, as shown in FIG. 1, the upper body and the lower body each have a protruding coupling part protruding in the lateral direction, and the protruding coupling part provides a space in which a bolt hole is formed so that it can be fastened by a bolt.

Also, as shown in FIG. 1, the upper body includes an upper plate and a lower plate coupled to each other again, and the first tube 110a is connected to the upper plate and the second tube 110b is connected to the lower plate. there is. In particular, in the above, the lower plate is provided with a step corresponding to the shape of the upper plate, and the upper plate may be coupled to the lower plate in a form to be seated on the step, and leakage of droplets is more effectively prevented through the stepped structure. As a preferred example, the upper plate and the lower plate may be coupled by welding, but it is not necessarily limited thereto.

The operation state of the vaporizer for thin film deposition according to the present invention configured as described above will be described as follows.

First, as shown in FIG. 1 , the liquid source and carrier gas introduced into the atomizer A are mixed in the mixing chamber and then supplied into the body 100 in the form of diffusion injection.

Then, the mixed droplet moves downward through the space 112 of the inner tube 110 constituting the body 100 . At this time, the inner tube moves downward as it becomes a primary heating form by the heating heat of the first heating unit 120 and continuously maintains a uniform temperature through the third heating unit 150 provided on the bottom surface 170 . It is guided to the spaced space 132 between the 110 and the outer tube 130 to move upward. At this time, the droplets moving upward are maintained at an appropriate temperature through the heating heat of the second heating unit 140 , and are discharged through the discharge port 160 at an appropriate temperature state.

As described above, the stabilized vaporized gas while maintaining an appropriate temperature moves to the discharge pipe T connected to the discharge port 160 in the form of particles, so that it can be applied to semiconductor thin film deposition.

In the technology of the vaporizer for semiconductor thin film deposition according to the embodiment of the present invention, the basic configuration of the vaporizer is the same as that of the known technology, and a detailed description thereof will be omitted.

In addition, the present invention described above with reference to the accompanying drawings is capable of various modifications and changes by those skilled in the art, and such modifications and changes not limited through the claims should be construed as being included in the scope of the present invention. .

A: atomizer T: discharge pipe
100: body
110: inner tube 112: space
120: first heating unit
130: outer tube 132: separation space
140: second heating unit
150: third heating unit
160: outlet
170: floor surface 172: floor space

Claims (5)

In the vaporizer for vaporizing the droplets injected into the body from the atomizer and supplying it to a position for semiconductor thin film deposition through a discharge pipe,
the body,
an inner tube having a downwardly open space for accommodating the droplet;
a first heating unit installed on the inner tube to radiate heating heat;
an outer tube installed to form a space away from the outer side of the inner tube;
a second heating unit installed on the outer tube to radiate heating heat; and
a discharge port provided on the outside of the outer tube so that the droplets moved to the bottom surface of the outer tube through the space are moved to a separation space and then discharged through the discharge port connected to the discharge tube;
including,
The inner tube is a double tube in the form of first and second tubes, and a heating room isolated from the separation space is formed therein, and the first heating unit is installed inside the heating room,
The first heating unit includes a heating coil, the heating coil is coupled to wrap the outer wall of the first pipe in a spiral shape in the heating room,
The heating room is configured in a hollow shape so that a configuration including a temperature sensor can be provided,
The inner diameter of the outer tube is formed larger than the outer diameter of the inner tube to form a spaced space between the inner tube and the outer tube, the space of the inner tube and the spaced space of the outer tube are mutually in the lower part of the body communicated,
The body includes an upper body having an inlet through which droplets are introduced, and a lower body having the space, the bottom space, the separation space, and the discharge port formed therein, the inner tube being provided in the upper body, and the outer tube being the It is provided on the lower body,
The upper body further includes an upper plate and a lower plate coupled to each other, wherein the first tube is connected to the upper plate and the second tube is connected to the lower plate.
The method according to claim 1,
Vaporizer for thin film deposition, characterized in that the body is provided on the bottom surface, and further comprises a third heating unit for heating the droplets guided to the separation space after moving downward through the space.
The method according to claim 1,
The heating room is filled with a fluid or a vaporizer for thin film deposition, characterized in that it is configured in a vacuum state.
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