KR102354335B1 - Pressure sensor array for measuring a pulse wave and packaging method of thereof - Google Patents

Abstract

The present invention provides a pressure sensor array for measuring a pulse wave, comprising: a plurality of pressure sensors arranged in at least one of a horizontal direction and/or a vertical direction; and a pressure transmission layer formed under the plurality of pressure sensors; and a sensing film formed between the plurality of pressure sensors and the pressure transfer layer, wherein each of the plurality of pressure sensors has a silicon nanowire formed adjacent to the sensing film, and vibrates from the outside through the pressure transfer layer When this is transmitted to the sensing layer, the resistance of the silicon nanowire is changed by the vibration.

Description

Pressure sensor array for pulse wave measurement and packaging method thereof

The present invention relates to a pressure sensor array for measuring a pulse wave and a packaging method thereof, and more particularly, to a pressure sensor array for measuring a pulse wave capable of accurately measuring a pulse wave and reducing a process process and cost, and a packaging method thereof .

In oriental medicine, the patient is pulsed and the health status is diagnosed based on the results of the pulse. In the past, an oriental doctor directly pulsed the patient's wrist. In this case, the oriental doctor finds the point of the pulse by touching the patient's wrist with his finger, and determines the strength of the pulse at the point. However, these measurement methods may vary depending on the subjectivity of the oriental medical doctor. Therefore, in recent years, in order to derive objective and accurate pulse results, a patient has been pulsed using a pacemaker. The pacifier measures the patient's pulse wave and pulse pressure through a pressure sensor for measuring pulse waves.

1A to 1C are diagrams for explaining the configuration of a general pressure sensor for measuring pulse waves.

Specifically, FIG. 1A shows the exterior of the pressure sensor, FIG. 1B is a front view of the connection structure of the pressure sensor, and FIG. 1C is a view of the packaging structure of the pressure sensor from the side.

As shown in FIGS. 1A and 1B , a general pressure sensor 100 for measuring a pulse wave is packaged by a wire bonding process. In this case, the electrode pad 105 of the sensor and the PCB electrode 120 are connected with the wire 110 .

As shown in FIG. 1C , a pressure transmitting material 140 is applied to the top of the pressure sensor 100 after wire bonding. The pressure transmitting material 140 is made of a soft material, and transmits mechanical vibration due to the pulse wave to the sensing membrane 130 of the pressure sensor 100 .

2 is a view for explaining a method of measuring a pulse wave using a general pressure sensor for measuring a pulse wave.

A pulse wave may be measured in the radial artery using the pressure sensor 100 for measuring a pulse wave. In order to easily measure the pulse wave caused by the flow of blood flow in the radial artery of the wrist, it is preferable to position the pressure sensor 100 as close to the radial artery as possible. However, when a single pressure sensor 100 is used, the process of arranging and aligning the pressure sensor 100 takes a considerable amount of time, which is not efficient. Therefore, it is effective to use a sensor array in which a plurality of pressure sensors 100 are arranged.

3 is a diagram illustrating an electrode connection structure of a general pressure sensor array.

If one pressure sensor 100 is connected as shown in FIG. 1B , wire bonding is not difficult because the number of electrodes is not large.

However, when a pressure sensor array is configured in the form of an MХN matrix, as the number of matrices increases, the number of electrodes to be connected increases exponentially, making it very difficult to connect the electrodes by wire bonding.

Referring to FIG. 3 , there is shown a wire bonding structure for a 3Х3 pressure sensor array 300 in which the number of electrode pads 105 of each pressure sensor 100 is four. In this case, although the number of pressure sensors 100 is only 9, since the number of electrode pads 105 is 36, it is impossible to perform a wire bonding process without interference between wires.

An object of the present invention is to provide a pressure sensor array for measuring a pulse wave capable of configuring a pressure sensor array without limiting the number and spacing of the pressure sensors, and a packaging method thereof.

Another object of the present invention is to provide a pressure sensor array for measuring a pulse wave comprising a pressure sensor using a high-sensitivity silicon nanowire piezoresistive element and a packaging method thereof.

Furthermore, an object of the present invention is to provide a pressure sensor array for measuring a pulse wave capable of effectively packaging the manufactured pressure sensor array on a PCB substrate, and a packaging method thereof.

The technical problems to be achieved in the present invention are not limited to the technical problems mentioned above, and other technical problems not mentioned are clear to those of ordinary skill in the art to which the embodiments proposed by the description below belong. can be understood clearly.

A pressure sensor array for measuring a pulse wave according to an embodiment of the present invention includes: a plurality of pressure sensors arranged in at least one of a horizontal direction and/or a vertical direction; and a pressure transmission layer formed under the plurality of pressure sensors; and a sensing film formed between the plurality of pressure sensors and the pressure transfer layer, wherein each of the plurality of pressure sensors has a silicon nanowire formed adjacent to the sensing film, and vibrates from the outside through the pressure transfer layer When this is transmitted to the sensing layer, the resistance of the silicon nanowire is changed by the vibration.

A packaging method of a pressure sensor array for measuring a pulse wave according to another embodiment of the present invention includes: forming a sensing film on a surface of a first substrate; and forming a silicon nanowire inside the first substrate; and forming a plurality of pressure sensors by inverting and etching the first substrate; and forming a sensor electrode on the surface of the first substrate.

According to the exemplary embodiments of the present invention, a pressure sensor array for measuring a pulse wave may be configured without limiting the number and spacing of the pressure sensors.

In addition, according to the embodiments of the present invention, it is possible to maximize the pulse wave measurement performance by using a high-sensitivity silicon nanowire piezoresistive element instead of a conventional piezoresistive element by diffusion of impurities.

Furthermore, according to embodiments according to the present invention, packaging time and process cost can be greatly reduced by using flip chip bonding instead of wire bonding.

1A to 1C are diagrams for explaining the configuration of a general pressure sensor for measuring pulse waves.
2 is a view for explaining a method of measuring a pulse wave using a general pressure sensor for measuring a pulse wave.
3 is a diagram illustrating an electrode connection structure of a general pressure sensor array.
4A and 4B are diagrams illustrating a structure of a pressure sensor array according to an embodiment of the present invention.
5 is a view for explaining a packaging method of a pressure sensor array according to an embodiment of the present invention.
6A and 6B are diagrams illustrating a structure of a pressure sensor array according to another embodiment of the present invention.
7A to 7C are diagrams for explaining a packaging method of a pressure sensor array according to another embodiment of the present invention.
8A to 8M are diagrams for explaining a packaging method of a pressure sensor array according to another embodiment of the present invention.
9 is a side perspective view of a pressure sensor manufactured by a method for packaging a pressure sensor array according to another embodiment of the present invention.
FIG. 10 is a view for explaining a principle of sensing a pulse wave using the silicon nanowire pressure sensor manufactured in FIG. 9 .
11A to 11F are diagrams illustrating a packaging process of a pressure sensor array according to another embodiment of the present invention.

Hereinafter, specific embodiments of the present invention will be described in detail with reference to the drawings. However, the technical spirit of the present invention is not limited by the embodiments described below, and other inventions that are degenerate by addition, change, and deletion of other components or other implementations included within the scope of the technical spirit of the present invention Examples can easily be suggested.

As for the terms used in the present invention, general terms that are currently widely used in relation to the current technology are selected as possible, but in special cases, there are also terms arbitrarily selected by the applicant, and in this case, the meaning is described in detail in the description of the corresponding invention. Therefore, it is clarified in advance that the present invention should be understood as the meaning of the term rather than the simple name of the term. In the description set forth below, the word 'comprising' does not exclude the presence of elements or steps other than those listed.

4A and 4B are diagrams illustrating a structure of a pressure sensor array according to an embodiment of the present invention.

In the pressure sensor array 400 according to an embodiment of the present invention, electrode pads 105 of individual sensors are disposed outside the corresponding pressure sensor array 400 , and internal electrodes from the electrode pads 105 to the individual pressure sensors are provided. It can be connected through a line.

In this case, the electrode pad 105 disposed outside may be connected to the PCB electrode 120 by wire bonding.

Referring to FIG. 4A , the electrode pads 105 constituting the individual sensors are not arranged at equal intervals, but are disposed outside the pressure sensor array 400 . The illustrated dotted line is an internal electrode line connected from the electrode pad 105 to the pressure sensor.

Thereafter, as shown in FIG. 4B , each electrode pad 105 is connected to a corresponding PCB electrode 120 by a wire 110 .

Accordingly, wire bonding is performed between the PCB electrode 120 disposed at the outermost portion of the pressure sensor array 400 and the electrode pad 105 disposed at the outermost portion adjacent thereto, thereby simplifying the electrode connection structure. Accordingly, as the number of pressure sensors 100 constituting the pressure sensor array 400 increases, it is possible to solve the problem that electrode connection by wire bonding becomes difficult.

5 is a view for explaining a packaging method of a pressure sensor array according to an embodiment of the present invention.

The top of the pressure sensor array 500 may be coated with a pressure transmitting material. Here, the pressure transmitting material is made of a soft material, and may transmit mechanical vibration due to the pulse wave to the sensing film of the pressure sensor 100 .

The pressure sensor array 500 includes a plurality of pressure sensors 100 . In this case, a region including each pressure sensor 100 may be defined as a cell. Referring to (a) shown at the top of FIG. 5, the pressure sensor array 500 is composed of three cells.

The pressure transmitting material of the pressure sensor array 500 may be separated in units of cells. When a pulse wave measuring sensor is configured using the pressure sensor array 500 , when a pulse wave generated from the radial artery is transmitted to the pressure sensor array 500 , crosstalk occurs between cells. Accordingly, as shown in (b) at the bottom of FIG. 5 , when the pressure transmitting material is separated in units of cells, interference between cells generated during pulse wave transmission can be minimized. Furthermore, the pressure sensor array 500 may be separated in units of cells. In detail, both the substrate of the pressure sensor array 500 and the pressure transmitting material may be separated in units of cells and spaced apart from each other by a predetermined distance.

6A and 6B are diagrams illustrating a structure of a pressure sensor array according to another embodiment of the present invention.

In order to prevent interference between cells including the individual pressure sensors 100 , the pressure transmitting material formed on the packaged sensor array may be separated in units of cells as shown in FIG. 5B . In this case, the pressure transmitting material may be cut using dicing equipment or the like.

However, as shown in FIG. 4A , when an internal electrode line connecting the external electrode pad 105 and an individual sensor is formed inside the sensor array, when the pressure transmitting material is cut with dicing equipment, the internal electrode line is There is a problem with breaking. Accordingly, in this case, the structure of the pressure sensor array should be configured differently from that of FIG. 4A .

In the pressure sensor array 600 according to another embodiment of the present invention, the individual pressure sensors 100 are arranged at uniform intervals, and the PCB electrodes 120 may be arranged on the left and right sides of each of the individual pressure sensors 100 . .

In this case, as shown in FIG. 6A , the electrode pad 105 of the individual pressure sensor 100 may be connected to the adjacent PCB electrode 120 by a wire 110 .

If the individual pressure sensors 100 are wire-bonded to form the pressure sensor array 600 as shown in FIG. 6A , as shown in FIG. 6B , the pressure transmitting material is coated and then diced to separate cells.

Since the individual pressure sensors 100 have to be wire-bonded, the spacing between the cells is widened. In this case, it is difficult to measure the pulse waves at tight intervals. Accordingly, the interval S between the sensors may be set to be less than a threshold value. The threshold value is an experimental value set differently in response to a measurement method, a measurement object, and a measurement environment.

In the packaging method using wire bonding, the pressure transmitting material must be coated to a thickness (T) that can sufficiently cover the bonded wire. The thicker the pressure transmitting material, the less well the pulse wave is transmitted to the sensor. Accordingly, the thickness T of the pressure transmitting material may be set to an optimized value in consideration of the height of the bonding wire and the degree of transmission of pulse waves. In this case, the pulse wave transmission degree may vary according to a measurement method, a measurement object, a measurement environment, and the like.

7A to 7C are diagrams for explaining a packaging method of a pressure sensor array according to another embodiment of the present invention.

According to the packaging method of the pressure sensor array 700 according to another embodiment of the present invention, the pressure sensor array 700 may be packaged by flip-chip bonding.

Flip-chip bonding is a method of electrically connecting a semiconductor chip to a substrate without using a wire. In this case, solder bumps serving as electrodes are formed on the surface of the semiconductor chip, and the semiconductor chip and the conductor terminals on the substrate are connected via the bump without using a lead wire. After aligning the bump with the conductor terminal on the board, melt it again and connect it directly.

Specifically, the packaging method of the pressure sensor array includes: forming a silicon nanowire inside a first substrate; grinding the first substrate to a predetermined thickness after bonding the first substrate and the second substrate; forming a sensor electrode on the polished surface of the first substrate; The method may include forming a sensing film of a predetermined thickness by etching the lower portion of the bonded second substrate to a predetermined depth, thereby configuring a plurality of pressure sensors. Here, the silicon nanowire may be formed by performing a wet oxide film forming process on a surface formed in a predetermined shape by anisotropically etching the first substrate.

In this case, the packaging method may include: forming solder on each conductor terminal of a second substrate corresponding to the first substrate; The method may further include bonding the first substrate and the second substrate by applying heat after aligning the first substrate and the second substrate so that the and sensor electrodes face each conductor terminal.

In addition, the packaging method may further include forming a pressure transmission layer in a region opposite to the region in which the plurality of pressure sensors are formed among regions of the first substrate.

Furthermore, the packaging method may further include separating the pressure transmission layer corresponding to each of the plurality of pressure sensors.

Hereinafter, it will be described in detail with reference to FIGS. 7A to 7C.

Referring to FIG. 7A , after the pressure sensor array 700 is manufactured, the sensor array electrode 705 and the electrode 715 of the PCB substrate 710 using a flip chip bonding process instead of the wire bonding process. connect In this case, since the flip chip bonding process is used, the bonding pad faces toward the PCB substrate 710 and the diaphragm faces upward.

After the pressure sensor array 700 and the PCB substrate 710 are connected, as shown in FIG. 7B , a pressure transmitting material is formed thereon. In this case, since there is no bonding wire, it is possible to form a thin pressure transmitting material. In addition, since the flat space occupied by the bonding wire disappears, the distance between the pressure sensors can be closely arranged.

As shown in FIG. 7C , the pressure transmitting material and the pressure sensor are separated in units of cells using a dicing process. In this case, it is possible to prevent the interference between the cells, it is possible to increase the number of pressure sensors or to arrange the spacing closely. In addition, since there is no bonding wire, it is easy to separate the pressure transmitting material in cell units using a dicing process.

8A to 8M are diagrams for explaining a packaging method of a pressure sensor array according to another embodiment of the present invention.

The pressure sensor array according to another embodiment of the present invention may have a form in which silicon nanowire-based pressure sensors are arranged. Here, the silicon nanowire-based pressure sensor may be composed of a silicon nanowire piezoresistive element.

Individual pressure sensors constituting the sensor array can maximize pulse wave sensing performance by using high-sensitivity silicon nanowire piezoresistive elements instead of conventional diffusion-based pressure sensors.

Specifically, steps of fabricating a silicon nanowire on a substrate are shown in FIGS. 8A to 8F .

8A is a step of preparing a substrate. In this case, the silicon substrate has an orientation in a predetermined direction.

8B is a step of sequentially depositing a silicon oxide film and a silicon nitride film on the substrate of FIG. 8A. In this case, the silicon oxide film is deposited using dry oxidation. The silicon nitride film is deposited using low pressure chemical vapor deposition (LPCVD).

8C is a step for exposing silicon by sequentially etching a silicon nitride layer and a silicon oxide layer. To this end, after coating a photoresist on the substrate of FIG. 8B, a predetermined pattern is formed through a photolithography process. Thereafter, the surface of the exposed substrate is dry etched to expose the silicon by sequentially etching the silicon nitride film and the silicon oxide film.

8D is a step of etching silicon exposed to the surface by the step of FIG. 8C to a predetermined depth through a dry etching process. After the etching process is finished, the photoresist film is removed.

8E is a step of anisotropic etching a silicon substrate. After the step of FIG. 8D, an hourglass shape is formed by anisotropically etching the silicon substrate using a KOH solution (or TMAH solution).

8f is a step of forming a silicon nanowire. A silicon nanowire is formed on the hourglass-shaped structure formed in the step of FIG. 8E through a wet oxide film forming process.

8G is a cross-sectional view of the substrate of FIG. 8F as viewed from the side. Referring to this, silicon nanowires are formed on the substrate.

8H and 8I are steps of bonding the carrier substrate and the substrate of FIG. 8G.

As shown in FIG. 8H, a separately prepared carrier substrate is placed on top of the silicon nanowire substrate of FIG. 8G, and bonding is performed by inserting a bonding epoxy between the two substrates. In this case, by applying heat and pressure after inserting the bonding epoxy, the two substrates can be bonded.

According to an embodiment, the wafer bonding may use a fusion bonding process instead of this method. In addition, glass frit bonding, eutectic bonding, etc. may be used by forming an appropriate bonding material between the two substrates.

8I is a step of flipping the substrate after bonding. When the two substrates are bonded by the step of FIG. 8H, the top and bottom of the bonded substrate are turned over so that the side of the substrate on which the silicon nanowires are formed for flip-chip bonding is up.

8J is a step of polishing the silicon nanowire forming substrate side. The silicon nanowire-forming substrate side is polished to a predetermined thickness d through a surface polishing process such as a chemical mechanical polishing (CMP) process.

8K is a step of forming an electrode on the surface of a substrate. In this case, high-concentration ion implantation, silicide formation, heat treatment, etc. are performed in the electrode formation region for depositing, patterning, and forming an ohmic contact with a metal such as aluminum.

On the other hand, when flip-chip bonding is performed, bonding between the sensor electrode pad and the PCB electrode is performed by melting the solder ball. The Al electrode consumes a lot in this process, so it is difficult to maintain the shape of the original electrode pad. Therefore, it is possible to further perform the step of forming a metal with low consumption, such as Ni, on the Al electrode.

FIG. 8L is a step of forming an upper diaphragm and a silicon nanowire piezoresistive element by dry etching the silicon on the bonding substrate.

8M is a step of forming a lower diaphragm by dry-etching silicon under the bonding substrate.

9 is a side perspective view of a pressure sensor manufactured by a method for packaging a pressure sensor array according to another embodiment of the present invention.

A silicon nanowire-based pressure sensor may be manufactured by the packaging process of FIGS. 8A to 8M described above. In this case, the silicon nanowire-based pressure sensor may be composed of a silicon nanowire piezoresistive element.

Referring to FIG. 9 , silicon nanowires are formed inside the pressure sensor, and electrode pads are formed outside the pressure sensor. Accordingly, the pressure sensor can maximize the pulse wave sensing performance by using a silicon nanowire piezoresistive element with high sensitivity.

The pressure sensor shown in FIG. 9 may constitute a pressure sensor array. In this case, the pressure sensor array may include a plurality of pressure sensors, a pressure transmitting layer, and a sensing film.

The plurality of pressure sensors may be arranged in at least one of a horizontal direction and/or a vertical direction.

In this case, silicon nanowires may be formed adjacent to the sensing film in each of the plurality of pressure sensors. In this case, when vibration is transmitted to the sensing film from the outside through the pressure transmission layer, the resistance of the silicon nanowire may be changed by the vibration.

According to an embodiment, each of the plurality of pressure sensors may be disposed on a first substrate, and the first substrate may be divided into a plurality of regions corresponding to each of the plurality of pressure sensors. In this case, each of the plurality of regions may be spaced apart from each other by a predetermined interval.

The pressure transmission layer may be formed under the plurality of pressure sensors.

According to an embodiment, the pressure transmission layer may be separated corresponding to each of the plurality of pressure sensors.

The sensing film may be formed between the plurality of pressure sensors and the pressure transmission layer.

The pressure sensor arrays can be connected by flip chip bonding.

In this case, a sensor electrode is formed in each of the plurality of pressure sensors, and the sensor electrode may be connected to a conductor terminal of a PCB substrate corresponding to the pressure sensor array by flip-chip bonding without wires.

FIG. 10 is a view for explaining a principle of sensing a pulse wave using the silicon nanowire pressure sensor manufactured in FIG. 9 .

A pressure transmitting material is formed under the silicon nanowire pressure sensor as shown in FIG. 10 . Vibration is transmitted to the sensing membrane of the pressure sensor 1000 through a pressure transmitting material due to the pulse pressure caused by the blood flow in the radial artery. The transmitted vibration generates a mechanical stress in the silicon nanowire closely attached to the sensing film, resulting in a change in resistance. In this case, the pulse wave can be detected by converting the resistance change of the silicon nanowire into an electrical signal.

11A to 11F are diagrams illustrating a packaging process of a pressure sensor array according to another embodiment of the present invention.

11A shows a silicon nanowire pressure sensor array substrate 1100 . From this the substrate area containing the predetermined number of pressure sensors is diced.

11B shows a silicon nanowire pressure sensor array 1100 device separated from a substrate by a dicing process. When the silicon nanowire pressure sensor array 1100 device is prepared, it is turned upside down for flip chip bonding. Thereby, the substrate area is located on the upper side on the vertical plane, and the pressure sensor area is located on the lower side.

11C to 11F show a packaging process using the device prepared in FIG. 11B.

11C is a step of bonding the silicon nanowire pressure sensor and the PCB substrate.

As shown in the figure at the top, solder is formed on each electrode of the PCB substrate for flip chip bonding. Thereafter, by aligning the silicon nanowire pressure sensor array 1100 and the PCB substrate and applying heat, the two substrates are bonded as shown in the figure at the bottom.

In the outermost part of the pressure sensor array 1100. Separate dummy electrodes may be formed to increase the bonding force between the sensor array and the PCB substrate.

11D is a process of forming a pressure transmitting material.

When the silicon nanowire pressure sensor array 1100 and the PCB substrate are bonded, a pressure transmitting material is formed on the back side of the sensor array as shown in FIG. 11D .

11E is a process of separating the pressure transmitting material. In order to minimize interference between pressure sensor cells during pulse wave measurement, a pressure transmitting material is separated using a dicing process as shown in FIG. 11E .

11f is a step of coating a protective material. To protect the surface of the pressure sensor array, a protective material may be coated. In this case, the protective material may use a hardness lower than that of the pressure transmitting material.

As described above, according to the packaging method using flip chip bonding, it is possible to simultaneously bond a plurality of pressure sensors to the PCB substrate. In addition, by not using a wire during bonding, it is possible to overcome the disadvantages of the packaging method by wire bonding.

Meanwhile, the above-described method can be written as a program that can be executed in a computer, and can be implemented in a general-purpose digital computer that operates the program using a computer-readable medium. In addition, the structure of data used in the above-described method may be recorded in a computer-readable medium through various means. It should be understood that a recording medium recording an executable computer program or code for performing various methods of the present invention does not include temporary objects such as carrier waves or signals. The computer-readable medium may include a storage medium such as a magnetic storage medium (eg, a ROM, a floppy disk, a hard disk, etc.) and an optically readable medium (eg, a CD-ROM, a DVD, etc.).

In the above, the embodiment has been mainly described, but this is only an example and does not limit the present invention, and those of ordinary skill in the art to which the present invention pertains are not exemplified above within the range that does not depart from the essential characteristics of the present embodiment. It can be seen that various modifications and applications are possible. For example, each component specifically shown in the embodiment may be implemented by modification. And differences related to such modifications and applications should be construed as being included in the scope of the present invention defined in the appended claims.

100, 1000: pressure sensor 105: electrode pad
110: wire 120: PCB electrode
300, 400, 500, 600, 700, 1100: pressure sensor array

Claims (9)

A pressure sensor array for measuring pulse waves, comprising:
a plurality of pressure sensors arranged in at least one of a horizontal direction and/or a vertical direction;
a pressure transmission layer formed under the plurality of pressure sensors; and
A sensing film formed between the plurality of pressure sensors and the pressure transmission layer,
The plurality of pressure sensors form a silicon nanowire inside a first substrate, bond the first substrate and the second substrate, and then grind the first substrate to a predetermined thickness, and apply it to the polished surface of the first substrate. After forming the sensor electrode, the lower portion of the bonded second substrate is etched to a predetermined depth to form a sensing film of a predetermined thickness,
In each of the plurality of pressure sensors, a silicon nanowire is formed inside adjacent to the sensing film, and when vibration is transmitted to the sensing film from the outside through the pressure transmission layer, the resistance of the silicon nanowire is increased by the vibration changes, and detects a pulse wave by changing the resistance change of the silicon nanowire into an electrical signal,
The silicon nanowire is formed by performing a wet oxide film forming process on an inner surface formed in a predetermined shape by anisotropically etching the first substrate in a vertical direction, and the first substrate is vertically etched to a predetermined depth through a dry etching process. The pressure sensor array for measuring a pulse wave, wherein the silicon nanowires are formed through the etching process, an hourglass shape is formed on the first substrate through a wet etching process, and then the silicon nanowires are formed through the wet oxide film forming process. According to claim 1,
The pressure transmission layer,
A pressure sensor array for measuring a pulse wave, which is separated corresponding to each of the plurality of pressure sensors. According to claim 1,
Each of the plurality of pressure sensors is disposed on the first substrate,
The first substrate is divided into a plurality of regions corresponding to each of the plurality of pressure sensors, and the plurality of regions are spaced apart from each other by a predetermined interval. According to claim 1,
A sensor electrode is formed in each of the plurality of pressure sensors,
The sensor electrode is a pressure sensor array for measuring a pulse wave connected to a conductor terminal of the second substrate corresponding to the pressure sensor array by flip-chip bonding. A method for packaging a pressure sensor array for measuring pulse waves, the method comprising:
forming a silicon nanowire inside the first substrate;
grinding the first substrate to a predetermined thickness after bonding the first substrate and the second substrate;
forming a sensor electrode on the polished surface of the first substrate; and
and forming a sensing film of a predetermined thickness by etching the lower portion of the bonded second substrate to a predetermined depth, thereby configuring a plurality of pressure sensors;
The silicon nanowire,
It is formed by performing a wet oxide film forming process on the inner surface formed in a predetermined shape by anisotropically etching the first substrate in a vertical direction,
The first substrate is etched to a predetermined depth through a dry etching process in a vertical direction, an hourglass shape is formed on the first substrate through a wet etching process, and then the silicon nanowires are formed through the wet oxide film forming process A method of packaging a pressure sensor array for pulse wave measurement. 6. The method of claim 5,
forming solder on each conductor terminal of a third substrate corresponding to the first substrate;
After aligning the first substrate and the third substrate so that the sensor electrode faces each of the conductor terminals, bonding the first substrate and the third substrate by applying heat. A method of packaging a sensor array. 7. The method of claim 6,
The method of packaging a pressure sensor array for measuring a pulse wave further comprising: forming a pressure transmission layer in an area on the second substrate opposite to the area in which the plurality of pressure sensors are formed among the areas of the first substrate. 8. The method of claim 7,
The packaging method of a pressure sensor array for measuring a pulse wave further comprising separating the pressure transmission layer corresponding to each of the plurality of pressure sensors. delete

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