KR102344764B1 - Pressure-strain sensor and method for manufacturing the same - Google Patents

Abstract

The present invention provides a graphene structure having a three-dimensional porous structure; flat sheets provided on the surface of the graphene structure; and a polymer film covering the graphene structure and the planar sheets, wherein the planar sheets include a transition metal chalcogenide compound. It provides a pressure-strain sensor.

Description

PRESSURE-STRAIN SENSOR AND METHOD FOR MANUFACTURING THE SAME

The present invention relates to a pressure-strain sensor and a method for manufacturing the same. More particularly, the present invention relates to a pressure-strain sensor comprising flat sheets and a method of manufacturing the same.

When a specific object is subjected to vertical pressure, tensile force, or compressive force from the outside, length deformation occurs. The piezo-resistive pressure-strain sensor is a sensor that measures the pressure, tensile force, or compressive force of the object by detecting a change in resistance that occurs according to the length deformation of the object. When the length of the object increases and the cross-sectional area decreases, the resistance of the object increases, and when the length of the object decreases and the cross-sectional area increases, the resistance of the object decreases. A pressure-strain sensor using the piezo-resistance effect as above is called a piezo-resistance sensor.

An object of the present invention is to provide a pressure-strain sensor having excellent sensitivity and durability, and a method for manufacturing the same.

The present invention provides a graphene structure having a three-dimensional porous structure; flat sheets provided on the surface of the graphene structure; and a polymer film covering the graphene structure and the planar sheets, wherein the planar sheets include a transition metal chalcogenide compound. It provides a pressure-strain sensor.

The flat sheets are MoS ₂ , WS ₂ , TiS ₂ , TaS ₂ , NiS ₂ , PtS ₂ , PdS ₂ , ReS ₂ , ZrS ₂ , HfS ₂ , NbS ₂ , CoS ₂ , MoSe ₂ , WSe ₂ , TiSe ₂ , TaSe ₂ , NiSe ₂ , PtSe ₂ , PdSe ₂ , ReSe ₂ , ZrSe ₂ , HfSe ₂ , NbSe ₂ , CoSe ₂ , MoTe ₂ , WTe ₂ , TiTe ₂ , TaTe ₂ , NiTe ₂ , PtTe ₂ , PdTe ₂ , ReTe ₂ ZrTe ₂ , HfTe ₂ , NbTe ₂ and CoTe ₂ It may include at least one selected from the group consisting of.

The inside of the graphene structure may be an empty space.

The graphene structure may further include a protective film surrounding the planar sheets and the polymer film.

It may further include a wire connected to the flat sheets through the passivation layer.

The flat sheets may be spaced apart from each other.

The planar sheets may cover a portion of the surface of the graphene structure and expose another portion of the surface of the graphene structure.

The polymer layer and the protective layer may include the same material.

The polymer film and the protective film may include one of PDMS, ecoflex, hydrogel, and a flexible polymer.

The present invention comprises the steps of forming a graphene structure on a three-dimensional porous metal foam to form a first preliminary structure; forming a second preliminary structure by forming planar sheets on the graphene structure; forming a third preliminary structure by forming a polymer film covering the graphene structure and the planar sheets; And it provides a pressure-strain sensor manufacturing method comprising the step of removing the metal foam.

Forming the flat sheets may include immersing the first preliminary structure in a transition metal chalcogenide compound solution.

The transition metal chalcogenide compound solution may have a ratio of 0.1wt% to 5wt% of the transition metal chalcogenide compound.

The transition metal chalcogenide compound is MoS ₂ , WS ₂ , TiS ₂ , TaS ₂ , NiS ₂ , PtS ₂ , PdS ₂ , ReS ₂ , ZrS ₂ , HfS ₂ , NbS ₂ , CoS ₂ , MoSe ₂ , WSe ₂ , TiSe ₂ , TaSe ₂ , NiSe ₂ , PtSe ₂ , PdSe ₂ , ReSe ₂ , ZrSe ₂ , HfSe ₂ , NbSe ₂ , CoSe ₂ , MoTe ₂ , WTe ₂ , TiTe ₂ , TaTe ₂ , NiTe ₂ , PtTe ₂ , PdTe ₂ , ReTe ₂ , ZrTe ₂ , HfTe ₂ , NbTe ₂ and CoTe ₂ It may be at least one selected from the group consisting of.

Forming the flat sheets may further include drying the first preliminary structure at a temperature of 80°C to 100°C, and heat-treating the first preliminary structure at 600°C to 1000°C.

The heat treatment of the first preliminary structure at 600° C. to 1000° C. may include disposing the first preliminary structure in a chamber, and flowing argon into the chamber.

The immersion of the first preliminary structure in the transition metal chalcogenide compound solution may include immersing the first preliminary structure in the transition metal chalcogenide compound solution for 1 minute to 60 minutes.

The forming of the third preliminary structure may include forming a protective layer surrounding the third preliminary structure.

Forming the polymer film may include immersing the second preliminary structure in a liquid polymer, and drying the liquid polymer adhering to the second preliminary structure.

The pressure-strain sensor according to the present invention may have excellent sensitivity and durability by including a graphene structure, planar sheets, and a polymer film.

1A is a view for explaining a pressure-strain sensor according to an embodiment of the present invention.
FIG. 1B is an enlarged view of area A of FIG. 1A .
1C is a cross-sectional view taken along line B-B' of FIG. 1B.
2A, 3A and 4A are diagrams for explaining a method of manufacturing a pressure-strain sensor according to an embodiment of the present invention.
2B, 3B, and 4B are enlarged views of area A of FIGS. 2A, 3A, and 4A, respectively.
2C, 3C, and 4C are cross-sectional views taken along line B-B' of FIGS. 2B, 3B, and 4B, respectively.
5A and 5B are FESEM images of nickel foam.
6A and 6B are FESEM images of a graphene structure provided on nickel foam.
7A and 7B are FESEM images of planar sheets formed by 0.2 wt% (NH ₄ ) ₂ MoS _{2 solution.}
8A and 8B are FESEM images of planar sheets formed by _{0.5wt% (NH 4} ) ₂ MoS _{2 solution.}
9A and 9B are FESEM images of flat sheets formed by 1.25 wt% (NH ₄ ) ₂ MoS _{2 solution.}
10A to 10D are diagrams for explaining resistance according to pressure applied to a pressure-strain sensor according to embodiments of the present invention.
11A is a diagram for explaining resistance according to tensile deformation of a pressure-strain sensor according to embodiments of the present invention.
11B is a diagram for explaining resistance according to bending deformation of a pressure-strain sensor according to embodiments of the present invention.

Advantages and features of the present invention, and methods for achieving them, will become apparent with reference to the embodiments described below in detail in conjunction with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but may be implemented in various different forms, and only this embodiment serves to complete the disclosure of the present invention, and to obtain common knowledge in the technical field to which the present invention pertains. It is provided to fully inform the possessor of the scope of the invention, and the present invention is only defined by the scope of the claims. Like reference numerals refer to like elements throughout.

The terminology used herein is for the purpose of describing the embodiments and is not intended to limit the present invention. In this specification, the singular also includes the plural unless specifically stated otherwise in the phrase. As used herein, 'comprises' and/or 'comprising' refers to the presence of one or more other components, steps, operations and/or devices mentioned. or addition is not excluded.

Hereinafter, embodiments of the present invention will be described in detail.

1A is a view for explaining a pressure-strain sensor according to an embodiment of the present invention. FIG. 1B is an enlarged view of area A of FIG. 1A . 1C is a cross-sectional view taken along line B-B' of FIG. 1B.

1A to 1C , the pressure-strain sensor according to the present invention may include a composite structure CS, a protective film PL, and wires WR.

The composite structure CS may include a graphene structure GS, planar sheets SH, and a polymer film PO. The graphene structure GS may have a three-dimensional porous structure. In other words, the graphene structure GS may have a three-dimensional branch shape extending irregularly.

An outer void OV and an inner void IV may be defined by the graphene structure GS. The inner void IV may be defined by the inner surface IS of the graphene structure GS. In other words, the inner void IV may be a space surrounded by the inner surface IS of the graphene structure GS. In other words, the inner void IV may be provided in the graphene structure GS. The inner void IV may be a substantially empty space. In other words, the inside of the graphene structure GS may be an empty space. The inner void IV may have a three-dimensional structure similar to that of the graphene structure GS. The graphene structure GS may have a shape that conformally surrounds the inner void IV.

The outer void OV may be defined by the outer surface OS of the graphene structure GS.

Flat sheets SH may be provided on the outer surface OS of the graphene structure GS. The planar sheets SH may cover a portion of the outer surface OS of the graphene structure GS and expose another portion. The planar sheets SH may be spaced apart from each other on the outer surface OS of the graphene structure GS. The flat sheets SH may be conformally formed. In other words, the thickness of the flat sheets SH may be constant.

Each of the flat sheets SH may include a transition metal chalcogenide compound. For example, the flat sheets SH are MoS ₂ , WS ₂ , TiS ₂ , TaS ₂ , NiS ₂ , PtS ₂ , PdS ₂ , ReS ₂ , ZrS ₂ , HfS ₂ , NbS ₂ , CoS ₂ , MoSe ₂ , WSe ₂ , TiSe ₂ , TaSe ₂ , NiSe ₂ , PtSe ₂ , PdSe ₂ , ReSe ₂ , ZrSe ₂ , HfSe ₂ , NbSe ₂ , CoSe ₂ , MoTe ₂ , WTe ₂ , TiTe ₂ , TaTe ₂ , NiTe ₂ , PtTe ₂ , PdTe ₂ , ReTe ₂ , ZrTe ₂ , HfTe ₂ , NbTe ₂ and CoTe ₂ It may include at least one selected from the group consisting of.

Each of the flat sheets SH may have a single molecular layer structure or a layered structure in which 2 to 10 molecular layers are stacked. In other words, each of the flat sheets SH may have a two-dimensional structure. For example, each of the planar sheets SH may have a single molecular layer structure of a transition metal chalcogenide compound. As another example, each of the planar sheets SH may have a layered structure in which a first molecular layer and a second molecular layer are stacked on the first molecular layer. In this case, the first molecular layer and the second molecular layer in the flat sheet SH may be coupled to each other by van der Waals force.

The flat sheets SH may include the same material. In other words, the flat sheets SH may have the same composition as each other. The planar sheets SH may have the same crystal structure or different crystal structures. For example, the crystal structure may include a hexagonal lattice structure, a triangular prism lattice structure, an orthorhombic lattice structure, and a modified octagonal (monoclinic) lattice structure.

A polymer film PO completely filling the outer void OV may be provided. The polymer film PO may cover the planar sheets SH and the graphene structure GS. The graphene structure GS may be supported by the polymer film PO, and the shape of the graphene structure GS may be maintained. The polymer film PO may include a polymer that is harmless to the human body. For example, the polymer film PO may include one of PDMS, ecoflex, hydrogel, and a flexible polymer.

The resistance of the composite structure CS may be changed according to compression, tension, or bending. By including the graphene structure GS and the polymer film PO, the composite structure CS may have relatively excellent restoring force and durability. In addition, since the composite structure CS includes the planar sheets SH including the transition metal chalcogenide compound, the sensitivity to resistance change according to compression, tension, or bending may be relatively excellent.

A protective layer PL surrounding the composite structure CS may be provided. The protective layer PL may protect the composite structure CS by blocking the composite structure CS from the outside. The passivation layer PL may include the same material as the polymer layer PO. For example, the passivation layer PL may include one of PDMS, ecoflex, hydrogel, and a flexible polymer.

The wires WR may pass through the passivation layer PL to be connected to the composite structure CS. Each of the wires WR may be connected to the flat sheet SH of the composite structure CS. The composite structure CS may be electrically connected to an external circuit by the wires WR, and the resistance of the composite structure CS may be measured.

2A, 3A and 4A are diagrams for explaining a method of manufacturing a pressure-strain sensor according to an embodiment of the present invention. 2B, 3B, and 4B are enlarged views of area A of FIGS. 2A, 3A, and 4A, respectively. 2C, 3C, and 4C are cross-sectional views taken along line B-B' of FIGS. 2B, 3B, and 4B, respectively.

2A to 2C , a metal foam MF may be provided. As an example, the metal foam MF may be nickel foam. The metal foam MF may have a three-dimensional porous structure. In other words, the metal foam MF may have a three-dimensional branch shape extending irregularly. The pores AO may be defined by the metal foam MF. The volume ratio of the metal foam (MF) and the pores (AO) may be 2:98 to 25:75. In other words, the metal foam MF may have a porosity of 75% to 98%.

Referring to FIGS. 3A to 3C , the graphene structure GS may be formed on the metal foam MF to form a first preliminary structure PS1 . The first preliminary structure PS1 may include a metal foam MF and a graphene structure GS. The graphene structure GS may be conformally formed on the metal foam MF by thermal chemical vapor deposition (TCVD). In other words, the metal foam MF may be surrounded by the inner surface IS of the graphene structure GS. The graphene structure GS may partially fill the pores AO. The pores AO partially filled by the graphene structure GS may be defined as outer voids OV. The outer void OV may be defined by the outer surface OS of the graphene structure GS.

4A to 4B , planar sheets SH are formed on the outer surface OS of the graphene structure GS to form a second preliminary structure. The second preliminary structure may include a metal foam MF, a graphene structure GS, and planar sheets SH. Forming the flat sheets SH, preparing a transition metal chalcogenide compound solution, immersing the first preliminary structure PS1 in the transition metal chalcogenide compound solution for 1 minute to 60 minutes, the Taking out the first preliminary structure (PS1) from the transition metal chalcogenide compound solution, drying the first preliminary structure (PS1) at a temperature of 80 °C to 100 °C, the first preliminary structure (PS1) to 600 °C to It may include heat treatment at 1000 °C. The transition metal chalcogenide compound solution may include a transition metal chalcogenide compound and a solvent. In the transition metal chalcogenide compound solution, the ratio of the transition metal chalcogenide compound may be 0.1wt% to 5wt%. For example, while the planar sheets SH are formed, nanoflakes (not shown) may be formed on each of the planar sheets SH. As the ratio of the transition metal chalcogenide compound increases, the size and density of the nanoflakes on each of the planar sheets SH may increase. For example, the transition metal chalcogenide compound is MoS ₂ , WS ₂ , TiS ₂ , TaS ₂ , NiS ₂ , PtS ₂ , PdS ₂ , ReS ₂ , ZrS ₂ , HfS ₂ , NbS ₂ , CoS ₂ , MoSe ₂ , WSe ₂ , TiSe ₂ , TaSe ₂ , NiSe ₂ , PtSe ₂ , PdSe ₂ , ReSe ₂ , ZrSe ₂ , HfSe ₂ , NbSe ₂ , CoSe ₂ , MoTe ₂ , WTe ₂ , TiTe ₂ , TaTe ₂ , NiTe ₂ , PtTe ₂ , PdTe ₂ , ReTe ₂ , ZrTe ₂ , HfTe ₂ , NbTe ₂ and CoTe ₂ may be at least one selected from the group consisting of. For example, the solvent may be ethylene glycol (EG) or dimethylformamide (DMF). The heat treatment of the first preliminary structure PS1 at 600° C. to 1000° C. may include disposing the first preliminary structure PS1 in a chamber, and flowing argon (Ar) in the chamber at 500 sccm to 1000 sccm. have.

A third preliminary structure PS3 may be formed by forming the polymer film PO covering the graphene structure GS and the planar sheets SH. The third preliminary structure PS3 may include a metal foam MF, a graphene structure GS, flat sheets SH, and a polymer film PO. A protective layer PL surrounding the third preliminary structure PS3 may be formed. Forming the polymer film PO and the protective film PL includes preparing a liquid polymer, immersing a second preliminary structure in the liquid polymer, withdrawing the second preliminary structure from the liquid polymer, and a second preliminary It may include drying the liquid polymer adhering to the structure. By immersing the second preliminary structure in the liquid polymer, the liquid polymer may penetrate into the outer void OV of the second preliminary structure, and the liquid polymer may surround the second preliminary structure. The liquid polymer penetrating into the outer void OV may be dried to form a polymer film PO completely filling the outer void OV. The liquid polymer surrounding the second preliminary structure may be dried to form a protective layer PL. The liquid polymer may include a polymer that is harmless to the human body. For example, the liquid polymer may include one of PDMS, ecoflex, hydrogel, and flexible polymer.

Referring back to FIGS. 1A and 1B , the metal foam MF of the third preliminary structure PS3 may be removed. Removing the metal foam MF includes preparing an etchant, immersing the third preliminary structure PS3 and the protective layer PL in the etchant, and a third preliminary structure in the etchant (PS3) and the passivation layer PL may be removed. The etchant may include a material that etches the metal foam MF. For example, when the metal foam MF includes nickel, the etchant may include a material that etches nickel. The etchant may penetrate the protective layer PL, the polymer layer PO, and the graphene structure GS to reach the metal foam MF, and the metal foam MF may be etched by the etchant.

The metal foam MF may be removed to define an inner void IV surrounded by the graphene structure GS. The inner void IV may be formed as a substantially empty space. By removing the metal foam MF, the third preliminary structure PS3 may be formed as a composite structure CS including the polymer film PO, the graphene structure GS, and the planar sheets SH.

The wires WR may pass through the passivation layer PL to be connected to the composite structure CS. Each of the wires WR may be connected to the flat sheet SH of the composite structure CS.

5A and 5B are FESEM images of nickel foam.

Referring to FIGS. 5A and 5B , it can be seen that the nickel foam has a three-dimensional porous structure.

6A and 6B are FESEM images of a graphene structure provided on nickel foam.

Referring to FIGS. 6A and 6B , it can be confirmed that the graphene structure is provided on the surface of the nickel foam.

7A and 7B are FESEM images of planar sheets formed by 0.2 wt% (NH ₄ ) ₂ MoS _{2 solution.} 8A and 8B are FESEM images of planar sheets formed by _{0.5wt% (NH 4} ) ₂ MoS _{2 solution.} 9A and 9B are FESEM images of flat sheets formed by 1.25 wt% (NH ₄ ) ₂ MoS _{2 solution.}

7A and 7B, the first preliminary structure including nickel foam and graphene structure _{was immersed in 0.2wt% (NH 4} ) ₂ MoS ₂ solution for 30 minutes, dried, and formed by heat treatment at 600° C. You can check the flat sheets. 7A and 7B , it can be seen that nanoflakes are formed on the flat sheets.

Referring to FIGS. 8a and 8b , the first preliminary structure including nickel foam and graphene structure _{was immersed in 0.5wt% (NH 4} ) ₂ MoS ₂ solution for 30 minutes, dried, and formed by heat treatment at 600° C. You can check the flat sheets. In FIGS. 8A and 8B , it can be seen that nanoflakes are formed on the flat sheets.

Referring to FIGS. 9a and 9b, a first preliminary structure including nickel foam and a graphene structure is immersed in a 1.25wt% (NH ₄ ) ₂ MoS ₂ solution for 30 minutes, dried, and formed by heat treatment at 600° C. You can check the flat sheets. 9A and 9B , it can be seen that nano flakes are formed on the flat sheets.

Referring back to FIGS. 7A to 9B , it can be seen that the density, shape, and size of the nanoflakes on the flat sheets vary according to the wt% of the _{(NH 4} ) ₂ MoS _{2 solution immersing the first preliminary structure.}

10A to 10D are diagrams for explaining resistance according to pressure applied to a pressure-strain sensor according to embodiments of the present invention.

10A to 10D, the first pressure-strain sensor (C1) has a composite structure made of a graphene structure and an eco-flex, and the second pressure-strain sensor (C2) has a composite structure including a graphene structure, an eco-flex and _{0.2wt% (NH 4} ) ₂ MoS _{2 in} the first preliminary structure for 30 minutes Formed by immersion in solution, drying, and heat treatment at 600°C It is made of flat sheets, and the third pressure-strain sensor (C3) shows that the composite structure contains 0.5 wt% (NH ₄ ) ₂ MoS _{2 of the graphene structure, the Ecoplex and the first preliminary structure for 30 minutes.} After being immersed in a solution, dried, and heat-treated at 600° C. to make flat sheets, and the fourth pressure-strain sensor (C4) shows that the composite structure contains 1.25 wt% of the graphene structure, the Ecoplex and the first preliminary structure for 30 minutes. (NH ₄ ) ₂ MoS ₂ Formed by immersion in solution, drying, and heat treatment at 600°C It is made of flat sheets. R ₀ is the resistance of the pressure-strain sensor when no pressure is applied, and R is the resistance of the pressure-strain sensor when pressure is applied.

_{10A and 10B , at the same pressure, the (RR 0} )/R ₀ value of the second pressure-strain sensor C2 is greater than that of the first pressure-strain sensor C1, and the second pressure-strain sensor (RR ₀ )/R _{0 of} the third pressure-strain sensor (C3) is higher than that of (C2), and (RR ₀ )/ of the fourth pressure-strain sensor (C4) than the third pressure-strain sensor (C3) It can be seen that the _{R 0 value is large.} As the applied pressure increases, it can be seen that _{the (RR 0} )/R ₀ value difference of the first to fourth pressure-deformation sensors is large.

Referring to FIG. 10C , in a pressure range of 0.6 kPa to 7.6 kPa, a pressure range of 7.6 kPa to 15.2 kPa, and a pressure range of 15.2 kPa to 25.4 kPa, first to fourth pressure-strain sensors C1, C2, You can check the sensitivity of C3, C4). Here, the sensitivity may be a value obtained by dividing the change amount _{of (RR 0} )/R ₀ value by the pressure change amount in the corresponding pressure range. In all pressure ranges, the sensitivity of the second pressure-strain sensor C2 is greater than that of the first pressure-strain sensor C1, and the sensitivity of the third pressure-strain sensor C3 is greater than that of the second pressure-strain sensor C2. , and it can be seen that the sensitivity of the fourth pressure-strain sensor C4 is greater than that of the third pressure-strain sensor C3.

In the pressure range of 7.6 kPa to 15.2 kPa, the sensitivity of the fourth pressure-strain sensor C4 was measured to ^{be 6.06 kPa −1 .} In other words, (the fourth pressure at 15.2kPa - the strain sensor _{(C4) (RR 0) /} R 0 of the value-strain sensor _{(C4) (RR 0) /} R 0 value as the fourth pressure at 7.6kPa of the absolute value of the difference) / (15.2kPa-7.6kPa) is 6.06kPa ^- it was determined to be ^1.

_{Referring to FIG. 10D , the value of (RR 0} )/R ₀ according to the number of times (Pressure cycle) of applying a pressure of 5.08 kPa to the fourth pressure-strain sensor can be confirmed. It can be seen that the change in the _{(RR 0} )/R ₀ value is not large until the number of times of applying the pressure reaches 4000 times. As described above, it can be seen that the pressure-strain sensor according to the embodiments of the present invention has excellent durability.

11A is a diagram for explaining resistance according to tensile deformation of a pressure-strain sensor according to embodiments of the present invention.

Referring to Figure 11a, the fourth pressure-when the tensile stress is applied to the strain sensor and the tensile strain (TS, Tensile strain) is changed from 0% to 23% and then changed back to 0% (RR ₀ )/ You can see the change in the _{R 0 value.} A fourth pressure-increase (RR ₀₎ / R ₀ value is increased in accordance with the tensile strain (TS) in the strain sensor and the fourth pressure-tensile strain (TS) in accordance with a reduction (RR ₀₎ / R ₀ value of the distortion sensor It can be seen that this decreases. (RR ₀ )/R _{0 It} can be seen that the value increases and decreases symmetrically.

11B is a diagram for explaining resistance according to bending deformation of a pressure-strain sensor according to embodiments of the present invention.

Referring to FIG. 11B , it can be seen that _{(RR 0} )/R ₀ value change when bending strain is increased from 0% to 50% by applying a bending stress to the fourth pressure-strain sensor. It can be _{seen that the (RR 0} )/R ₀ value increases as the bending strain of the fourth pressure-strain sensor increases. The bending deformation and (RR ₀ )/R ₀ values of the fourth pressure-strain sensor are shown in [Table 1] below.

Bending strain (%) (RR ₀ )/R ₀ 12.6 2.79 16.2 3.55 24.5 5.3 33.3 8 40.6 10.47 50 11.85

As mentioned above, although embodiments of the present invention have been described with reference to the accompanying drawings, those of ordinary skill in the art to which the present invention pertains can implement the present invention in other specific forms without changing its technical spirit or essential features. You can understand that there is Therefore, it should be understood that the embodiments described above are illustrative in all respects and not restrictive.

CS: Composite Structure
PL: Shield
WR: wire
GL: Graphene Structure
SH: flat sheet
PO: polymer film

Claims (18)

a graphene structure having a three-dimensional porous structure;
flat sheets provided on the surface of the graphene structure; and
Including a polymer film covering the graphene structure and the planar sheets,
The flat sheets are pressure-strain sensors comprising a transition metal chalcogenide compound.
The method of claim 1,
The flat sheets are MoS ₂ , WS ₂ , TiS ₂ , TaS ₂ , NiS ₂ , PtS ₂ , PdS ₂ , ReS ₂ , ZrS ₂ , HfS ₂ , NbS ₂ , CoS ₂ , MoSe ₂ , WSe ₂ , TiSe ₂ , TaSe ₂ , NiSe ₂ , PtSe ₂ , PdSe ₂ , ReSe ₂ , ZrSe ₂ , HfSe ₂ , NbSe ₂ , CoSe ₂ , MoTe ₂ , WTe ₂ , TiTe ₂ , TaTe ₂ , NiTe ₂ , PtTe ₂ , PdTe ₂ , ReTe ₂ ZrTe ₂ , HfTe ₂ , NbTe ₂ and CoTe ₂ A pressure-strain sensor comprising at least one selected from the group consisting of.
The method of claim 1,
The inside of the graphene structure is an empty space pressure-strain sensor.
The method of claim 1,
The pressure-strain sensor further comprising a protective film surrounding the graphene structure, the planar sheets, and the polymer film.
5. The method of claim 4,
The pressure-strain sensor further comprising a wire connected to the flat sheets through the protective film.
The method of claim 1,
wherein the flat sheets are spaced apart from each other.
7. The method of claim 6,
The flat sheets cover a portion of the surface of the graphene structure, and the pressure-strain sensor for exposing another portion of the surface of the graphene structure.
5. The method of claim 4,
wherein the polymer film and the protective film include the same material.
9. The method of claim 8,
The polymer film and the protective film include one of PDMS, ecoflex, hydrogel, and a flexible polymer.
forming a graphene structure on a three-dimensional porous metal foam to form a first preliminary structure;
forming a second preliminary structure by forming planar sheets on the graphene structure;
forming a third preliminary structure by forming a polymer film covering the graphene structure and the planar sheets; and
A pressure-strain sensor manufacturing method comprising the step of removing the metal foam.
11. The method of claim 10,
Forming the flat sheets comprises:
A pressure-strain sensor manufacturing method comprising immersing the first preliminary structure in a transition metal chalcogenide compound solution.
12. The method of claim 11,
The transition metal chalcogenide compound solution is a pressure-strain sensor manufacturing method in which the ratio of the transition metal chalcogenide compound is 0.1wt% to 5wt%.
13. The method of claim 12,
The transition metal chalcogenide compound is MoS ₂ , WS ₂ , TiS ₂ , TaS ₂ , NiS ₂ , PtS ₂ , PdS ₂ , ReS ₂ , ZrS ₂ , HfS ₂ , NbS ₂ , CoS ₂ , MoSe ₂ , WSe ₂ , TiSe ₂ , TaSe ₂ , NiSe ₂ , PtSe ₂ , PdSe ₂ , ReSe ₂ , ZrSe ₂ , HfSe ₂ , NbSe ₂ , CoSe ₂ , MoTe ₂ , WTe ₂ , TiTe ₂ , TaTe ₂ , NiTe ₂ , PtTe ₂ , PdTe ₂ , ReTe ₂ , ZrTe ₂ , HfTe ₂ , NbTe ₂ and CoTe ₂ At least one selected from the group consisting of a pressure-strain sensor manufacturing method.
12. The method of claim 11,
Forming the flat sheets comprises:
The pressure-strain sensor manufacturing method further comprising drying the first preliminary structure at a temperature of 80°C to 100°C, and heat-treating the first preliminary structure at 600°C to 1000°C.
15. The method of claim 14,
Heat treatment of the first preliminary structure at 600 ° C to 1000 ° C,
disposing the first preliminary structure in a chamber, and flowing argon into the chamber.
12. The method of claim 11,
Immersion of the first preliminary structure in the transition metal chalcogenide compound solution,
A pressure-strain sensor manufacturing method comprising immersing the first preliminary structure in the transition metal chalcogenide compound solution for 1 minute to 60 minutes.
11. The method of claim 10,
The step of forming the third preliminary structure,
and forming a protective film surrounding the third preliminary structure.
11. The method of claim 10,
Forming the polymer film is,
and immersing the second preliminary structure in a liquid polymer, and drying the liquid polymer adhering to the second preliminary structure.

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