KR102341688B1 - Field emission device and x-ray emission source having the same - Google Patents

Abstract

The field emission device includes a cathode electrode; at least one emitter electrically connected to the cathode electrode and emitting an electron beam; an anode electrode disposed to be spaced apart from the cathode electrode and the emitter and accelerating the electron beam; a gate electrode disposed between the cathode electrode and the anode electrode and having at least one gate hole through which the electron beam passes; and an electron-transmitting conductor attached to a surface of the gate electrode facing the cathode electrode and covering the gate hole. Here, the electron-transmitting conductor may include a conductive material to prevent deformation of equipotential lines of an electric field formed between the cathode electrode and the gate electrode, and transmit electrons emitted from the emitter.

Description

Field emission device and X-ray emission source having the same

The present invention relates to a field emission device and an X-ray emission source having the same.

In general, a field emission device is a device that emits electrons from an emitter disposed on the cathode electrode by applying an electric field to the cathode electrode. The field emission device may have a two-electrode structure or a three-electrode structure. Of these, the field emission device having the three-electrode structure emits an electron beam from the emitter on the cathode electrode with a voltage applied to a gate electrode, and the electron beam passing through the gate electrode is applied to the anode electrode It can be accelerated by the applied voltage. Electrons emitted from the cathode electrode move to the anode electrode through a hole in the gate electrode.

Meanwhile, an electric field may be formed between the gate electrode and the cathode electrode by a voltage applied to the gate electrode. The electric field may be substantially uniform between the gate electrode and the cathode electrode. However, in the vicinity of the hole, the electric field may be deformed. The deformation of the electric field causes the electron beam to spread without being focused, so that the width of the electron beam reaching the anode electrode may be increased.

One object of the present invention is to provide a field emission device capable of preventing an increase in the width of an electron beam.

Another object of the present invention is to provide an X-ray emission source including the field emission device.

A field emission device for achieving one object of the present invention is a cathode electrode; at least one emitter electrically connected to the cathode electrode and emitting an electron beam; an anode electrode disposed to be spaced apart from the cathode electrode and the emitter and accelerating the electron beam; a gate electrode disposed between the cathode electrode and the anode electrode and having at least one gate hole through which the electron beam passes; and an electron-transmitting conductor attached to a surface of the gate electrode facing the cathode electrode and covering the gate hole. Here, the electron-transmitting conductor may include a conductive material to prevent deformation of equipotential lines of an electric field formed between the cathode electrode and the gate electrode, and transmit electrons emitted from the emitter.

The electron-transmitting conductor may include at least one of iron (Fe), nickel (Ni), cobalt (Co), and alloys thereof. Alternatively, the electron-transmitting conductor may include at least one two-dimensional conductive material selected from among _{graphene, perbroskite, MoS 2} , WSe ₂ , H-BN, and TaS _{2 .}

The cathode electrode may include at least one recess, the emitter may be disposed on the recess, and a plurality of emitters may be disposed on the recess.

The cathode electrode may include a plurality of recesses, a plurality of emitters may be disposed on the cathode electrode, and each of the emitters may be disposed in the recesses. The diameter and depth of the recesses may be the same, or at least one of the diameter and depth of the recesses may be different from each other.

An electron beam control electrode for controlling the electron beam to be focused on the anode electrode may be further included. The electron beam control electrode may have a shape extending from the gate electrode to the anode electrode. The electron beam control electrode may include the same material as the gate electrode, and may be integrally formed with the gate electrode.

An X-ray emission source for achieving another object of the present invention may include a vacuum container, and the field emission device disposed inside the vacuum container.

According to an embodiment of the present invention, the field emission device may prevent deformation of equipotential lines of an electric field generated between the cathode electrode and the gate electrode. Accordingly, the field emission device can prevent the width of the electron beam from increasing.

1 and 2 are conceptual views for explaining an X-ray emission source according to an embodiment of the present invention.
3 is a conceptual diagram illustrating the field emission device illustrated in FIGS. 1 and 2 .
4 and 5 are views for explaining the shape of an electron beam according to the presence or absence of an electron-transmitting conductor of a field emission device.
6 and 7 are conceptual views for explaining a field emission device according to other embodiments of the present invention.
8 and 9 are views for explaining the shape of an electron beam according to the presence or absence of an electron-transmitting conductor of a field emission device.
10 to 13 are views for explaining the shape of the cathode electrode shown in FIGS. 6 to 9 .
14 to 17 are conceptual views for explaining a field emission device according to still other embodiments of the present invention.
18 is a conceptual diagram for explaining a field emission device according to another embodiment of the present invention.
19 is a conceptual diagram illustrating an X-ray imaging apparatus using an X-ray emission source including a field emission device according to embodiments of the present invention.

Since the present invention can have various changes and can have various forms, specific embodiments are illustrated in the drawings and described in detail in the text. However, this is not intended to limit the present invention to the specific disclosed form, it should be understood to include all modifications, equivalents and substitutes included in the spirit and scope of the present invention.

In describing each figure, like reference numerals have been used for like elements. In the accompanying drawings, the dimensions of the structures are enlarged than the actual size for clarity of the present invention. Terms such as first, second, etc. may be used to describe various elements, but the elements should not be limited by the terms. The above terms are used only for the purpose of distinguishing one component from another. For example, without departing from the scope of the present invention, a first component may be referred to as a second component, and similarly, a second component may also be referred to as a first component. The singular expression includes the plural expression unless the context clearly dictates otherwise.

In the present application, terms such as "comprise" or "have" are intended to designate that a feature, number, step, operation, component, part, or a combination thereof described in the specification exists, but one or more other features It is to be understood that it does not preclude the possibility of the presence or addition of numbers, steps, operations, components, parts, or combinations thereof. Also, when a part of a layer, film, region, plate, etc. is said to be “on” another part, this includes not only the case where the other part is “directly on” but also the case where there is another part in between. Conversely, when a part of a layer, film, region, plate, etc. is said to be "under" another part, this includes not only cases where it is "directly under" another part, but also cases where there is another part in between.

Hereinafter, preferred embodiments of the present invention will be described in more detail with reference to the accompanying drawings.

1 and 2 are conceptual views for explaining an X-ray emission source according to an embodiment of the present invention.

1 and 2 , the X-ray emission source may include a vacuum container VC and a field emission element FE disposed inside the vacuum container VC.

The vacuum vessel VC may provide a space for accommodating the field emission element FE. The inside of the vacuum vessel VC may be maintained in a vacuum state. For example, the internal pressure of the vacuum vessel VC may be maintained at ^{10 −7 Torr or less.}

As shown in FIG. 1 , the vacuum vessel VC may be a vacuum chamber. When the vacuum container VC is a vacuum chamber, a vacuum pump VP for maintaining the inside of the vacuum container VC in a vacuum may be mounted on one side of the vacuum container VC.

In addition, as shown in FIG. 2 , the vacuum vessel VC may be a vacuum tube. When the vacuum container VC is a vacuum tube, a getter (not shown) for maintaining and improving the vacuum ecology may be disposed inside the vacuum container VC.

The field emission element FE is a cathode electrode 100, an emitter 200 disposed on one surface of the cathode electrode 100 and emitting an electron beam, facing the cathode electrode 100 and the emitter 200 ) may include an anode electrode 400 on which an electron beam is focused, and a gate electrode 300 disposed between the cathode electrode 100 and the anode electrode 400 .

The field emission device FE may generate X-rays by causing the electron beam emitted from the emitter 200 to collide with the anode electrode 400 .

3 is a conceptual diagram illustrating the field emission device illustrated in FIGS. 1 and 2 .

Referring to FIG. 3 , the field emission device FE may include a cathode electrode 100 , an emitter 200 , a gate electrode 300 , an electron-transmitting conductor 320 , and an anode electrode 400 . .

The cathode electrode 100 and the anode electrode 400 may be commonly used anodes and cathodes. That is, the cathode electrode 100 may be an electron source supplying electrons to the emitter 200 . In addition, the anode electrode 400 may be an electrode that attracts the flow of electrons.

The cathode electrode 100 and the anode electrode 400 may include a conductive material. For example, the cathode electrode 100 and the anode electrode 400 may be formed of a metal material including at least one of gold (Au), nickel (Ni), titanium (Ti), chromium (Cr), and alloys thereof. may include In addition, the cathode electrode 100 and the anode electrode 400 include indium tin oxide (ITO), indium zinc oxide (IZO), aluminum zinc oxide (AZO), indium zinc tin oxide (IZTO), and mixtures thereof. and transparent conductive oxide (TCO). In addition, the cathode electrode 100 and the anode electrode 400 may include one of a conductive polymer and graphene.

The cathode electrode 100 may supply electrons to the emitter 200 by an applied power. The emitter 200 may emit electrons supplied from the cathode electrode 100 toward the anode electrode 400 . The amount of electrons emitted from the emitter 200, that is, the amount of current of the electron beam emitted from the emitter 200, can be determined by the voltage difference between the cathode electrode 100 and the gate electrode 300. have. That is, as the voltage difference between the cathode electrode 100 and the gate electrode 300 increases, the amount of current of the electron beam emitted from the emitter may increase.

The emitter 200 may be disposed on one surface of the cathode electrode 100 . Also, the emitter 200 may be electrically connected to the cathode electrode 100 .

At least one emitter 200 may be provided. When a plurality of emitters 200 are provided, each emitter 200 may be arranged on the cathode electrode 100 in a horizontal direction or a vertical direction at regular intervals, respectively. The emitter 200 may include one of carbon nanotubes (CNT), carbon nanofibers, semiconductor nanowires, conductive nanorods, and graphite. In addition, the emitter 200 may have a shape having a tip. For example, the emitter 200 may have a needle shape or a cone shape.

The gate electrode 300 may be disposed between the cathode electrode 100 and the anode electrode 400 . The gate electrode 300 may include at least one of aluminum (Al), iron (Fe), nickel (Ni), cobalt (Co), and an alloy thereof.

The gate electrode 300 may determine the amount of current of the electron beam. The amount of current of the electron beam is determined by the voltage difference between the cathode electrode 100 and the gate electrode 300 , and the power applied to the cathode electrode 100 is generally a fixed voltage, for example, a ground voltage. , the amount of current of the electron beam may be determined by the voltage of the gate electrode 300 . That is, as the voltage applied to the gate electrode 300 increases, the amount of current of the electron beam may increase.

Also, the gate electrode 300 may form an electric field together with the cathode electrode 100 . The electric field may control a movement path of electrons emitted from the emitter 200 .

The gate electrode 300 may include at least one gate hole 310 . Here, the emitter 200 may be disposed under the gate hole 310 , and the electron beam may pass through the gate hole 310 to move to the anode electrode 400 .

The electron-transmitting conductor 320 may be attached to one surface of the gate electrode 300 and may cover the gate hole 310 . For example, the electron-transmitting conductor 320 may be attached to the surface of the gate electrode 300 facing the cathode electrode 100 .

The electron-transmitting conductor 320 may include a conductive material and may transmit electrons. For example, the electron-transmitting conductor 320 may include one of iron (Fe), nickel (Ni), cobalt (Co), and an alloy thereof. Or the electron-transmitting conductor 320 is graphene (graphene), perovskite (Perovskite), MoS ₂ , WSe ₂ , H-BN (hexagonal-boron nitride), and TaS ₂ At least one of at least one two-dimensional conductive material may be included. Here, the electron-transmitting conductor 320 may have a thickness sufficient to transmit electrons, for example, a thickness of several Å to several tens of Å.

Since the electron-transmitting conductor 320 includes a conductive material, it is possible to prevent the electric field formed between the cathode electrode 100 and the gate electrode 300 from being deformed in a region adjacent to the gate hole 310 . have.

When equipotential lines of the electric field formed between the cathode electrode 100 and the gate electrode 300 by the electron-transmitting conductor 320 are parallel to each other, the electrons emitted from the emitter 200 are in the electric field. can go straight by Accordingly, the width of the electron beam reaching the anode electrode 400 may be the same as or similar to the width of the electron beam in the region adjacent to the emitter 200 .

However, when the equipotential lines of the electric field are deformed, the electrons are emitted from the emitter 200 and cannot go straight to the anode electrode 400 , but may move in a direction inclined to the anode electrode 400 . Accordingly, a width of the electron beam reaching the anode electrode 400 may be greater than a width of the electron beam in a region adjacent to the emitter 200 .

The anode electrode 400 may be disposed to be spaced apart from the cathode electrode 100 and the emitter 200 . In addition, the anode electrode 400 may accelerate the electron beam emitted from the emitter 200 . Here, as the voltage applied to the anode electrode 400 increases, the speed of the electron beam reaching the anode electrode 400 may be high.

The anode electrode 400 may reflect the electron beam or transmit the electron beam. For example, the anode electrode 400 may be inclined at a predetermined angle with respect to the cathode electrode 100 to reflect the electron beam emitted from the emitter 200 . Alternatively, the anode electrode 400 may have a reflective surface capable of reflecting the electron beam.

Also, the anode electrode 400 may transmit the electron beam emitted from the emitter 200 .

4 and 5 are views for explaining the shape of an electron beam according to the presence or absence of an electron-transmitting conductor of a field emission device.

The field emission element FE shown in FIG. 4 includes a cathode electrode 100, an emitter 200 disposed on one surface of the cathode electrode 100, and a gate electrode 300 having a gate hole 310; and an anode electrode 400 . An electric field may be formed between the cathode electrode 100 and the gate electrode 300 . The electric field may control the movement direction of electrons.

The equipotential lines of the electric field may be deformed in a region adjacent to the gate hole 310 . In particular, the equipotential lines may be deformed toward the gate hole 310 . That is, the equipotential lines may be deformed into a convex shape toward the gate hole 310 . Also, as the voltage applied to the gate electrode 300 increases, the amount of deformation of the equipotential lines may increase.

When the equipotential lines are deformed, some electrons in the electron beam emitted from the emitter 200 may not go straight to the anode electrode 400 , but may move in a direction inclined to the anode electrode 400 . Accordingly, in the field emission device FE shown in FIG. 4 , the width of the electron beam reaching the anode 400 may be greater than the width of the electron beam emitted from the emitter 200 .

In addition, since the amount of deformation of the equipotential lines increases as the voltage applied to the gate electrode 300 increases, an angle formed by the propagation direction of the electrons with respect to the anode electrode 400 may be increased. Accordingly, as the voltage applied to the gate electrode 300 increases, the width of the electron beam reaching the anode electrode 400 may increase.

The field emission device FE shown in FIG. 5 includes a cathode electrode 100, an emitter 200 disposed on one surface of the cathode electrode 100, and a gate electrode 300 having a gate hole 310; An electron-transmitting conductor 320 attached to a surface of the gate electrode 300 facing the cathode electrode 100 and covering the gate hole 310 may be provided, and the anode electrode 400 . An electric field may be formed between the cathode electrode 100 and the gate electrode 300 . The electric field may control the movement direction of electrons.

The field emission device FE illustrated in FIG. 5 may include the electron-transmitting conductor 320 . The electron-transmitting conductor 320 may include a conductive material. Accordingly, the electron-transmitting conductor 320 may prevent the equipotential lines of the electric field from being deformed in a region adjacent to the gate hole 310 . That is, the equipotential lines may be parallel to the cathode electrode 100 and the gate electrode 300 .

When the equipotential lines are parallel to the cathode electrode 100 and the gate electrode 300 , electrons emitted from the emitter 200 may travel straight to the anode electrode 400 . Accordingly, the width of the electron beam of the field emission device FE shown in FIG. 5 can be prevented from increasing even when it reaches the anode 400 .

Hereinafter, a field emission device according to other embodiments of the present invention will be described with reference to FIGS. 6 to 18 . 6 to 18, the same components as those shown in FIGS. 1 to 5 are given the same reference numerals, and a brief description thereof will be made. In addition, in FIGS. 6 to 18 , points different from those of FIGS. 1 to 5 will be mainly described in order to avoid overlapping descriptions.

6 and 7 are conceptual views for explaining a field emission device according to other embodiments of the present invention.

6 and 7, the field emission element FE is a cathode electrode 100 having at least one recess 110, and at least one emitter disposed in the recess 110 to emit an electron beam ( 200), a gate electrode 300 having at least one gate hole 310 that controls a movement path of electrons of the electron beam and is a movement path of the electron, and the cathode electrode 100 of the gate electrode 300 An electron-transmitting conductor 320 attached to the facing surface and covering the gate hole 310 may be provided, and the anode electrode 400 may be provided.

When the plurality of emitters 200 are disposed in the recess 110 , the gate electrode 300 may include a plurality of gate holes 310 . Each of the gate holes 310 may correspond to the emitters 200 .

When the cathode electrode 100 has the recess 110 , and power is applied to the cathode electrode 100 and the gate electrode 300 , the cathode electrode 100 and the cathode electrode 100 and the Equipotential lines of an electric field formed between the gate electrodes 300 may be deformed. In particular, the equipotential lines may be deformed toward the inside of the recess 110 . That is, the equipotential lines may be deformed into a concave shape to face the inside of the recess 110 .

When the equipotential lines are deformed to face the inside of the recess 110 , the emission angle of the electron beam emitted from the emitter 200 may be reduced. However, in the region adjacent to the recess 110 , since the distance between the equipotential lines increases, the amount of current of the electron beam emitted from the emitter 200 may decrease. In order to prevent a decrease in the amount of current of the electron beam, it is necessary to increase the voltage applied to the gate electrode 300 . When the voltage applied to the gate electrode 300 is increased, the voltage difference between the cathode electrode 100 and the gate electrode 300 increases, thereby preventing a decrease in the amount of current of the electron beam.

Also, since the electron-transmitting conductor 320 includes a conductive material, the electron-transmitting conductor 320 may prevent the equipotential lines of the electric field from being deformed in a region adjacent to the gate hole 310 . Accordingly, the electron beam generated by the field emission device FE according to the present embodiment may have the same or similar width in the region adjacent to the emitter 200 and in the region adjacent to the anode electrode 400 .

8 and 9 are views for explaining the shape of an electron beam depending on the presence or absence of an electron-transmitting conductor of a field emission device.

The field emission element FE shown in FIG. 8 includes a cathode electrode 100 having at least one recess 110 , an emitter 200 disposed in the recess 110 to emit an electron beam, and electrons of the electron beam. A gate electrode 300 having a gate hole 310 that controls a movement path of the electrons and a movement path of the electrons, and an anode electrode 400 may be provided. An electric field may be formed between the cathode electrode 100 and the gate electrode 300 . The electric field may control the movement direction of electrons.

The equipotential lines of the electric field may be deformed in a region adjacent to the gate hole 310 . Also, as the voltage applied to the gate electrode 300 increases, the amount of deformation of the equipotential lines may increase.

When the equipotential lines are deformed, the width of the electron beam reaching the anode electrode 400 may be greater than the width of the electron beam emitted from the emitter 200 .

The field emission element FE shown in FIG. 9 includes a cathode electrode 100 having at least one recess 110 , an emitter 200 disposed in the recess 110 to emit an electron beam, and electrons of the electron beam. A gate electrode 300 having a gate hole 310, which is a movement path for electrons and controlling the movement path of the electron, is attached to the surface of the gate electrode 300 facing the cathode electrode 100 and is attached to the gate hole ( An electron-transmitting conductor 320 covering the 310 and the anode electrode 400 may be provided.

The field emission element FE shown in FIG. 9 may include the electron-transmitting conductor 320 . The electron-transmitting conductor 320 may prevent the equipotential lines of the electric field from being deformed in a region adjacent to the gate hole 310 . Accordingly, electrons emitted from the emitter 200 may go straight to the anode electrode 400 . Accordingly, the width of the electron beam of the field emission element FE shown in FIG. 9 can be prevented from increasing even when it reaches the anode 400 .

10 to 13 are views for explaining the shape of the cathode electrode shown in FIGS. 6 to 9 .

First, referring to FIGS. 10 and 11 , the cathode electrode 100 may include at least one recess 110 . The recessed portion 110 may have various shapes. For example, the recess 110 may have one of a hemispherical shape and a cylindrical shape. In this embodiment, the shape of the recess 110 has been described as one of a hemispherical shape and a cylindrical shape as an example, but is not limited thereto. The shape of the recess 110 may be satisfied as long as it has a shape capable of accommodating the emitter.

12 and 13 , the cathode electrode 100 includes a lower cathode electrode 120 on which an emitter 200 is disposed on one surface, and the emitter 200 of the lower cathode electrode 120 . An upper cathode electrode 130 disposed on the disposed surface may be included.

12 , the lower cathode electrode 120 and the upper cathode electrode 130 may be spaced apart from each other. Also, as shown in FIG. 13 , the upper cathode electrode 130 may be disposed directly on the surface on which the emitter 200 is disposed of the lower cathode electrode 120 .

The upper cathode electrode 130 may be electrically connected to the lower cathode electrode 120 . Also, the upper cathode electrode 130 may include an opening exposing the emitter 200 . Due to the opening, the cathode electrode 100 may have a shape having a recess. That is, the opening may serve as the recess 110 of FIGS. 10 and 12 .

14 to 17 are conceptual views for explaining a field emission device according to still other embodiments of the present invention.

14 to 17 , the field emission element FE includes a cathode electrode 100 having a plurality of recesses 110 , and a plurality of emitters respectively disposed on the recesses 110 to emit an electron beam. (200), a gate electrode 300 having a plurality of gate holes 310 corresponding to the emitters 200, respectively, is attached on a surface of the gate electrode 300 facing the cathode electrode 100, and An electron-transmitting conductor 320 covering the gate hole 310 and an anode electrode 400 may be provided.

The recesses 110 may have one of a hemispherical shape and a cylindrical shape.

14 and 15 , both the diameter r and the depth h of the recesses 110 may be the same. Also, the depths of the recesses 110 may all be the same.

16 and 17 , the diameters r1 and r2 of the recesses 110 may be different from each other. For example, the diameter r1 of one of the adjacent recesses 110 may be larger than the diameter r2 of the other.

Also, the depths h1 and h2 of the recesses 110 may be different from each other. For example, the depth h1 of one of the adjacent recesses 110 may be greater than the depth h2 of the other.

18 is a conceptual diagram for explaining a field emission device according to another embodiment of the present invention.

Referring to FIG. 18 , the field emission element FE includes a cathode electrode 100 having a plurality of recesses 110 , and a plurality of emitters 200 respectively disposed on the recesses 110 to emit an electron beam. , a gate electrode 300 having a plurality of gate holes 310 respectively corresponding to the emitters 200 , attached on a surface of the gate electrode 300 facing the cathode electrode 100 , and the gate hole An electron-transmitting conductor 320 covering the 310 , an anode electrode 400 , and an electron beam control electrode 350 may be provided.

The electron beam control electrode 350 may be integrally formed with the gate electrode 300 . For example, the electron beam control electrode 350 may have a shape extending from the gate electrode 300 to the anode electrode 400 . Accordingly, the electron beam control electrode 350 may include the same material as the gate electrode 300 .

The electron beam control electrode 350 may control a movement path of electrons passing through the gate hole 310 . For example, the electron beam control electrode 350 may focus electrons passing through the gate hole 310 to the anode electrode 400 . The electron beam emitted from the emitters 200 by the electron beam control electrode 350 may be focused on a point of the anode electrode 400 .

The positions and sizes of the gate electrode 300 and the electron beam control electrode 350 may be changed according to the use of the electron beam.

19 is a conceptual diagram illustrating an X-ray imaging apparatus using an X-ray emission source including a field emission device according to embodiments of the present invention.

Referring to FIG. 19 , the X-ray imaging apparatus may include an X-ray emission source XS, an X-ray imaging unit XD, a power supply PW, and a controller SV.

The X-ray emission source XS may generate and emit X-rays. The X-ray emission source XS may include the field emission device shown in FIGS. 1 to 18 . In the field emission device, an electron beam emitted from an emitter may collide with an anode electrode to generate X-rays. The X-rays emitted from the X-ray emission source XS may be irradiated to the target object OB.

The X-ray imaging unit XD may detect X-rays irradiated to the target object OB. The X-ray imaging unit XD may be an image sensor capable of detecting X-rays.

The control unit SV may receive an image of the X-ray detection result detected by the X-ray imaging unit XD. The control unit SV may process an image of the X-ray detection result and output it to a monitor or the like.

The power supply PW may supply power to the X-ray emission source XS and the control unit SV. An emitter of the field emission device of the X-ray emission source XS may generate an electron beam by the power source, and the electron beam may collide with the anode electrode. The electron beam may collide with the anode electrode to generate the X-rays.

The X-ray imaging apparatus as described above may be used for non-destructive testing, X-ray fluoroscopy, mammography, computed tomography, and the like.

The above detailed description illustrates and describes the present invention. In addition, the foregoing is merely to show and describe preferred embodiments of the present invention, and as described above, the present invention can be used in various other combinations, modifications and environments, the scope of the concept of the invention disclosed herein, and the writing Changes or modifications can be made within the scope equivalent to one disclosure and/or within the skill or knowledge in the art. Accordingly, the detailed description of the present invention is not intended to limit the present invention to the disclosed embodiments. In addition, the appended claims should be construed to include other embodiments as well.

100: cathode electrode 200: emitter
300: gate electrode 400: anode electrode

Claims (20)

cathode electrode;
at least one emitter electrically connected to the cathode electrode and emitting an electron beam;
an anode electrode disposed to be spaced apart from the cathode electrode and the emitter and accelerating the electron beam;
a gate electrode disposed between the cathode electrode and the anode electrode and having at least one gate hole through which the electron beam passes; and
an electron-transmitting conductor disposed between the gate electrode and the cathode electrode, attached to a surface of the gate electrode facing the cathode electrode, and overlapping the gate hole;
The electron-transmitting conductor includes a conductive material to prevent deformation of equipotential lines of an electric field formed between the periphery of the gate hole and to transmit electrons emitted from the emitter. According to claim 1,
The electron-transmitting conductor includes at least one of iron (Fe), nickel (Ni), cobalt (Co), and an alloy thereof. According to claim 1,
The electron-transmitting conductor is a field emission device comprising at least one two-dimensional conductive material selected from graphene, perbroskite _{, MoS 2 , WSe 2} , H-BN, and TaS _{2 .} According to claim 1,
The cathode electrode has at least one recess, and the emitter is disposed in the recess. 5. The method of claim 4,
A field emission device in which a plurality of emitters are disposed in the recess. According to claim 1,
The cathode electrode has a plurality of recesses, a plurality of emitters are disposed on the cathode electrode, and each of the emitters is disposed in the recesses. 7. The method of claim 6,
A field emission device having the same diameter and depth of the recesses. 7. The method of claim 6,
At least one of a diameter and a depth of the recesses are different from each other. According to claim 1,
The field emission device further comprising an electron beam control electrode for controlling the electron beam to be focused on the anode electrode. 10. The method of claim 9,
The electron beam control electrode has a shape extending from the gate electrode to the anode electrode. 10. The method of claim 9,
The electron beam control electrode includes the same material as the gate electrode, and is integrally formed with the gate electrode. vacuum vessel; and
and a field emission element disposed inside the vacuum vessel,
The field emission device is
cathode electrode;
at least one emitter disposed on a surface of the cathode electrode and emitting an electron beam;
an anode electrode disposed to be spaced apart from the cathode electrode and the emitter and accelerating the electron beam;
a gate electrode disposed between the cathode electrode and the anode electrode and having at least one gate hole through which the electron beam passes; and
an electron-transmitting conductor disposed between the gate electrode and the cathode electrode, attached to a surface of the gate electrode facing the cathode electrode, and overlapping the gate hole;
The electron-transmitting conductor includes a conductive material to prevent deformation of equipotential lines of an electric field formed around the gate hole, and to transmit electrons emitted from the emitter. 13. The method of claim 12,
The electron-transmitting conductor is an electric field including at least one of iron (Fe), nickel (Ni), cobalt (Co), graphene, perbroskite _{, MoS 2 , WSe 2} , H-BN, and TaS ₂ Emitting X-ray emission source. 13. The method of claim 12,
The cathode electrode includes at least one recess, and the emitter is disposed in the recess. 15. The method of claim 14,
An X-ray emission source in which a plurality of emitters are disposed in the recess. 13. The method of claim 12,
The cathode electrode includes a plurality of recesses, a plurality of emitters are disposed on the cathode electrode, and each of the emitters is disposed in the recesses. 17. The method of claim 16,
At least one of the diameters and depths of the recesses is different from each other. 13. The method of claim 12,
The X-ray emission source further comprising an electron beam control electrode for controlling the electron beam to be focused on the anode electrode. 19. The method of claim 18,
The electron beam control electrode is an X-ray emission source having a shape extending from the gate electrode to the anode electrode. 19. The method of claim 18,
The electron beam control electrode includes the same material as the gate electrode and is integrally formed with the gate electrode.

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