KR102319294B1 - Pretreatment device for regeneration of special gas used in semiconductor manufacturing process and pretreatment method thereof - Google Patents

Abstract

The present invention relates to a pretreatment device for the regeneration of special gas used in a semiconductor manufacturing process and a pretreatment method thereof. In accordance with an embodiment of the present invention, the pretreatment device for the regeneration of special gas used in the semiconductor manufacturing process comprises: a catalyst treatment chamber which receives gas which has been prior-purified and treated for exhaust gas which is made by diluting the special gas exhausted from the semiconductor manufacturing process, and decomposes one or more of CH4 and CF4; a heating chamber placed on a front end of the catalyst treatment chamber for increasing the temperature of the inflow gas into the catalyst treatment chamber; a heat exchanger placed on a front end of the heating chamber and making the gas, which has been prior-purified and treated, and the returning gas discharged from the catalyst treatment chamber exchange heat with each other, and increasing the temperature of the gas, which has been prior-purified and treated, and transferring the gas to the heating chamber, and primarily cooling the returning gas; a cooling chamber which secondarily cools the returning gas, which is primarily cooled by the heat exchanger; an adsorption unit which removes one or more of HF, F2, CO, CO2, and H2O from the secondarily cooled gas discharged from the cooling chamber; and a fan which keeps an operation pressure, and transfers the discharge gas from the adsorption unit to a gas regeneration system.

Description

PRETREATMENT DEVICE FOR REGENERATION OF SPECIAL GAS USED IN SEMICONDUCTOR MANUFACTURING PROCESS AND PRETREATMENT METHOD THEREOF

The present invention relates to a pretreatment apparatus for regenerating a special gas used in a semiconductor manufacturing process and a pretreatment method thereof, and more particularly, in a semiconductor manufacturing process for pretreating waste gas discharged from a semiconductor process and supplying a special gas to a regeneration system. It relates to a pre-treatment apparatus for regenerating a special gas used and a pre-treatment method thereof.

The types of gases used in semiconductor manufacturing processes are as diverse as manufacturing processes that go through numerous stages. Gas types used in the semiconductor manufacturing process can be broadly classified into general gases and special gases used in wafer manufacturing.

General industrial gases are generally versatile. However, special gas is quite expensive in terms of price, and the supply of special gas for electronics is limited because it is manufactured by a relatively small number of companies according to the order of a specific company.

It is now time to come up with an economical plan for special gas price and supply stability, etc. in accordance with the enlargement and production increase of existing demand industries such as semiconductors and LCDs.

Among the special gases, the main target gases are PFCs such as C2F6, C3F8, CF4, SF6, and Xe. These special gases are used in chemical vapor deposition (CVD), etching, and cleaning processes during the semiconductor manufacturing process. can

The waste gas discharged after being used in CVD and etching processes is discharged through a vacuum pump. At this time, the waste gas is mixed with high-temperature nitrogen gas and discharged to the outside. This prevents gaseous substances such as SiH4 and TEOS contained in the process waste gas from being converted into powder form at low temperature and introduces high-temperature nitrogen gas to suppress the clogging of the powder inside the vacuum pump. do.

In general, the gas flow rate used in CVD and etching processes is a small amount of 10 LPM or less, but by mixing with the nitrogen gas input to the vacuum pump, the flow rate of the process waste gas discharged from the rear end of the vacuum pump tends to increase to about 50 to 100 LPM. .

A gas scrubber system is applied to the rear end of a vacuum pump to treat waste gas mixed with various types of air pollutants, and a gas scrubber installed in such a manufacturing line (FAB) is commonly referred to as a point of use (POU) gas scrubber.

An apparatus for removing air pollutants is used in order to discharge waste gas discharged from such a semiconductor manufacturing process, for example, waste gas discharged from POU into the atmosphere.

On the other hand, the waste gas may include a special gas used in the above process, and a method of reusing it may be used. However, since the gas is discharged in a diluted state after the semiconductor manufacturing process, in order to reuse waste gases such as PFCs and Xe, it is important to reduce particulate matter, moisture, etc., and a high-purity recovery pretreatment process through a catalyst and adsorption method is important.

The technical problem to be achieved by the present invention is to provide a pretreatment device and a pretreatment method for regenerating a special gas used in a semiconductor manufacturing process that provides a high-purity recovery pretreatment process to reuse a special gas (Xe, PFCs, etc.) used in the semiconductor process will provide

The technical problems to be achieved by the present invention are not limited to the technical problems mentioned above, and other technical problems not mentioned can be clearly understood by those of ordinary skill in the art to which the present invention belongs from the description below. There will be.

In order to achieve the above technical problem, an embodiment of the present invention provides a pre-processing apparatus for regenerating a special gas used in a semiconductor manufacturing process. A pretreatment device for regenerating a special gas used in a semiconductor manufacturing process receives a gas that has undergone pre-purification treatment with respect to an exhaust gas in which the special gas exhausted from the semiconductor manufacturing process is diluted, and decomposes at least one of CH4 and CF4 catalyst processing chamber; a heating chamber provided at the front end of the catalyst treatment chamber to increase the temperature of the gas introduced into the catalyst treatment chamber; It is provided at the front end of the heating chamber and heat exchanges between the pre-purified gas and the return gas discharged from the catalyst treatment chamber to increase the temperature of the pre-purified gas and deliver it to the heating chamber, and the return gas is 1 car cooling heat exchanger; a cooling chamber for secondarily cooling the return gas cooled primarily by the heat exchanger; an adsorption unit for removing at least one of HF, F2, CO, CO2 and H2O from the secondary cooled gas discharged from the cooling chamber; and a fan that maintains the operating pressure and delivers the exhaust gas from the adsorption unit to the gas regeneration system.

In an embodiment of the present invention, the adsorption unit comprises: an adsorption chamber for removing at least one of HF and F2 using an absorber from the secondary cooled gas discharged from the cooling chamber; and a zeolite chamber for removing at least one of CO, CO2, and H2O from the gas discharged from the adsorption chamber.

In an embodiment of the present invention, the special gas includes PFCs or Xe, and the pretreatment device for regenerating the special gas used in the semiconductor manufacturing process is selected from the exhaust gas containing the special gas discharged from the semiconductor manufacturing process. , It may further include Wet EP for removing particulate matter, SiF4, HF, and F2 as the pre-cleaning treatment.

In an embodiment of the present invention, the exhaust gas discharged from the vacuum pump of the semiconductor manufacturing process may be introduced into the Wet E.P after being treated by a POU scrubber.

In an embodiment of the present invention, the heat exchanger heats the low-temperature gas flowing in from the wet EP to a first temperature by the heat exchange and discharges it to the heating chamber, and the heating chamber is the first The inlet gas, which has been heated to a temperature, may be further heated to a second temperature required for the catalyst treatment and supplied to the catalyst treatment chamber.

In an embodiment of the present invention, the heating chamber may be heated with a cartridge heater inserted therein, and the temperature may be raised to the second temperature.

In an embodiment of the present invention, the catalyst treatment chamber may oxidize CH4 and CF4 in the high-temperature gas introduced from the heating chamber using a catalyst, and may discharge it as CO2, H2O, and F2.

In an embodiment of the present invention, the low-temperature gas introduced from the Wet E.P may be 23 degrees to 26 degrees, the first temperature may be 400 degrees to 500 degrees, and the second temperature may be 700 degrees or more.

In an embodiment of the present invention, the cooling chamber may secondary-cool the return gas, which is primarily cooled by the heat exchanger, using PCW, and discharge it to 40 degrees or less.

In order to achieve the above technical object, another embodiment of the present invention provides a pretreatment method for regenerating a special gas used in a semiconductor manufacturing process. In the pretreatment method for regenerating a special gas, particulate matter, SiF4, HF, and F2 are removed by using Wet E.P in the exhaust gas containing PFCs or Xe as a special gas discharged from the semiconductor manufacturing process. The gas treated by the wet EP is heated to a first temperature by exchanging heat with the return gas from the catalyst treatment chamber using a heat exchanger, and then provided to the heating chamber, and the return gas cooled primarily by heat exchange is transferred to the cooling chamber to provide. The gas heated to the first temperature from the heat exchanger is heated to a second temperature by the heating chamber and provided to the catalyst processing chamber. At least one of CH4 and CF4 is decomposed by treating the gas heated to the second temperature with a catalyst processing chamber. The return gas firstly cooled by the heat exchanger is secondarily cooled by the cooling chamber. At least one of HF and F2 is removed from the secondary cooled gas discharged from the cooling chamber by using an adsorption chamber including an absorber. At least one of CO, CO2 and H2O is removed from the gas discharged from the adsorption chamber by using a zeolite chamber.

According to an embodiment of the present invention, as a pretreatment device for reusing special gases (Xe, PFCs, etc.) used in the semiconductor process, it reduces particulate matter, moisture, etc. with high efficiency, and performs a high-purity recovery pretreatment process through catalyst and adsorption method It is possible to provide a pretreatment apparatus and a pretreatment method for regenerating a special gas used in a semiconductor manufacturing process to be performed.

It should be understood that the effects of the present invention are not limited to the above-described effects, and include all effects that can be inferred from the configuration of the invention described in the detailed description or claims of the present invention.

1 is a block diagram illustrating a pre-processing apparatus for regenerating a special gas used in a semiconductor manufacturing process according to an embodiment of the present invention.
2 and 3 are diagrams illustrating examples of a system in which a pre-processing apparatus for regenerating a special gas used in a semiconductor manufacturing process according to an embodiment of the present invention is installed.
4 to 6 are views illustrating a pre-processing apparatus for regenerating a special gas used in a semiconductor manufacturing process.
7 is a view showing an example of the wet EP in the pre-processing apparatus for regenerating a special gas.
8 is a view showing an example of a heat exchanger in a pre-processing device for regenerating a special gas.
9 is a view showing an example of a heating chamber in the pre-processing apparatus for regenerating a special gas.
10 is a view showing an example of a catalyst treatment chamber in the pretreatment device for the regeneration of a special gas.
11 is a view showing the decomposition performance of CF4 according to the reaction temperature in the catalyst treatment chamber.
12 is a view showing the SF6 decomposition performance according to the reaction temperature in the catalyst treatment chamber.
13 is a view showing an example of the arrangement of a cooling chamber, an adsorption chamber, and a zeolite chamber in the pre-processing apparatus for regeneration of a special gas.
14 is a view showing an example of an adsorption chamber in a pre-processing apparatus for regenerating a special gas.
15 and 16 are views showing an example of a zeolite chamber in a pre-processing apparatus for regenerating a special gas.
17 is a flowchart illustrating a pretreatment method for regeneration of a special gas used in a semiconductor manufacturing process according to an embodiment of the present invention.
18 is a diagram illustrating an example of operation data of a pre-processing apparatus and pre-processing method for regenerating a special gas used in a semiconductor manufacturing process according to an embodiment of the present invention.

Since the present invention can have various changes and can have various forms, specific embodiments are illustrated in the drawings and described in detail in the text. However, this is not intended to limit the present invention to the specific disclosed form, it should be understood to include all modifications, equivalents and substitutes included in the spirit and scope of the present invention. In describing each figure, like reference numerals have been used for like elements.

Unless defined otherwise, all terms used herein, including technical and scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. Terms such as those defined in commonly used dictionaries should be interpreted as having a meaning consistent with the meaning in the context of the related art, and should not be interpreted in an ideal or excessively formal meaning unless explicitly defined in the present application. does not

Hereinafter, preferred embodiments of the present invention will be described in more detail with reference to the accompanying drawings.

1 is a block diagram illustrating a pre-processing apparatus for regenerating a special gas used in a semiconductor manufacturing process according to an embodiment of the present invention.

The pretreatment device 10 for regenerating a special gas used in the semiconductor manufacturing process is a perfluorinated compound (PFCs) in the waste gas discharged from chemical vapor deposition (CVD), etching, and cleaning processes during semiconductor and display manufacturing processes. ), can be adopted as a pre-treatment device for regenerating a special gas containing Xe and the like.

The pretreatment device 10 for regenerating special gas used in the semiconductor manufacturing process (hereinafter referred to as the pretreatment device for regenerating special gas) includes Wet EP 100, heat exchanger 200, heating chamber 300, catalyst treatment It may include a chamber 400 , a cooling chamber 500 , an adsorption unit, and a fan 800 .

The Wet E.P 100 may remove particulate matter, SiF4, HF, and F2 as a pre-purification treatment from among the exhaust gas including the special gas discharged from the semiconductor manufacturing process.

The heat exchanger 200 is provided at the front end of the heating chamber 300 to exchange heat between the gas processed by the Wet E.P 100 and the return gas from the catalyst processing chamber 400 . As a result of the heat exchange, the temperature of the gas treated by the Wet E.P 100 may be raised and transferred to the heating chamber 300, and the return gas may be first cooled.

The heating chamber 300 may be provided between the front end of the catalyst processing chamber 400 and the heat exchanger 200 to increase the temperature of the gas heated to the first temperature by the heat exchanger 200 to the second temperature.

The catalyst processing chamber 400 may receive the gas heated to the second temperature by the heating chamber 300 and decompose at least one of CH4 and CF4 to increase the purity of the special gas.

In the cooling chamber 500 , the return gas discharged from the catalyst processing chamber 400 may receive the gas firstly cooled by the heat exchanger 200 to be secondarily cooled.

The adsorption unit may remove at least one of HF, F2, CO, CO2, and H2O from the secondary cooled gas discharged from the cooling chamber 500 . The adsorption unit may include, for example, an adsorption chamber 600 and a zeolite chamber 700 .

The adsorption chamber 600 may remove at least one of HF and F2 using an absorbent material from the secondary cooled gas discharged from the cooling chamber 500 . As a result, the purity of the special gas can be improved.

The zeolite chamber 700 may remove at least one of CO, CO2 and H2O from the gas discharged from the adsorption chamber 600 to further increase the purity of the special gas.

The fan 800 maintains the device operating pressure, and may deliver the exhaust gas from the zeolite chamber 700 to the gas regeneration system.

2 and 3 are diagrams illustrating examples of a system in which a pre-processing apparatus for regenerating a special gas used in a semiconductor manufacturing process according to an embodiment of the present invention is installed.

Among the special gases, main target gases are PFCs such as C2F6, C3F8, CF4, SF6, and Xe, and these gases are used in semiconductor etching processes and the like.

As shown in FIG. 2 , in the semiconductor process, a plurality of vacuum pumps may discharge the exhaust gas of the process. Each vacuum pump can be equipped with a POU scrubber. In this case, a plurality of pre-processing devices for regenerating the special gas described in FIG. 1 may be installed. A heat duct is connected to a plurality of POU scrubbers, and each Wet E.P (100) of a pretreatment device for regenerating a plurality of special gases is connected to the heat duct to receive exhaust gas.

When using a POU scrubber, the gas flow rate increases, for example, a flow rate of 13 CMM or more may be generated. Therefore, the pre-processing device for regenerating the special gas can be composed of two to three (2+1) 10CMM-class devices.

On the other hand, as shown in Figure 3, the POU scrubber is removed, when the vacuum pump is connected to the heat duct, the flow rate can be reduced. For example, a flow rate of 2720 LPM or more may be generated. Therefore, the pretreatment device for the regeneration of the special gas can be composed of two to three (2+1) 5CMM-class devices.

After the semiconductor manufacturing process such as the etching process, since the gas is discharged in a diluted state, in order to reuse the waste gas such as PFCs and Xe, it is important to reduce particulate matter and moisture, and a high purity recovery pretreatment process through catalyst and adsorption method is important .

According to the pretreatment apparatus for regenerating a special gas according to the present embodiment, it is possible to efficiently perform a pretreatment for regenerating a special gas such as Xe and PFCs. Accordingly, by providing a high-purity special gas pretreatment process, it is possible to provide a productive method in terms of special gas price and supply stability.

Hereinafter, the configuration of the pre-processing apparatus for regenerating the special gas will be described in more detail.

4 to 6 are views illustrating an example of a pre-processing apparatus for regenerating a special gas used in a semiconductor manufacturing process. 4 is a plan view of a pretreatment device for regenerating a special gas, FIG. 5 is a front view of the pretreatment device for regenerating a special gas, and FIG. 6 is a left side view of the pretreatment device for regenerating a special gas.

4 to 6, as described above, the pretreatment device for the regeneration of the special gas is the wet EP 100, the heat exchanger 200, the heating chamber 300, the catalyst treatment chamber 400, the cooling chamber ( 500 ), an adsorption chamber 600 , and a zeolite chamber 700 .

The Wet E.P 100 may receive exhaust gas from a heat duct of a facility of a semiconductor manufacturing process as described with reference to FIGS. 2 and 3 . The heat exchanger 200 may be connected to the wet E.P 100 by the first pipe 210 . The heating chamber 300 may be connected to the heat exchanger 200 by the second pipe 220 . The catalyst processing chamber 400 may receive gas from the heating chamber 300 , and the third pipe 230 at the rear end of the catalyst processing chamber 400 may pass through the heat exchanger 200 . The fourth pipe 240 may connect the heat exchanger 200 and the cooling chamber 500 . The adsorption chamber 600 may be connected to the rear end of the cooling chamber 500 , and the zeolite chamber 700 may be connected to the rear end of the adsorption chamber 600 .

As long as the configuration of such a device maintains only the connection relationship, the arrangement or specific form may be changed. In particular, as shown in FIGS. 4 to 6 , the adsorption chamber 600 and the zeolite chamber 700 may be configured as one body or may be configured to be separated from each other.

7 is a view showing an example of the Wet E.P (100) in the pre-processing apparatus for regenerating a special gas.

Special gases may include PFCs, or Xe. The exhaust gas from the semiconductor process may be treated by a wet zon of the Wet E.P 100 and a discharge scrubber. Accordingly, the Wet E.P 100 can remove particulate matter, SiF4, HF, and F2 as a pre-cleaning treatment from the exhaust gas including the special gas discharged from the semiconductor manufacturing process.

In the semiconductor manufacturing process, SiF4 is generated by the combination of CF4 and SiO2 and may be included in the exhaust gas. SiF4 may react with water during catalyst treatment to form SiO2 particles, thereby reducing the efficiency of the catalyst. Therefore, SiF4 and other particles can be treated with high efficiency in the WET E.P (100). For example, preferably, SiF4 can be removed with an efficiency of about 95% or more and particles of about 95% or more.

In preparation for a case in which the WET E.P 100 is exposed to a high concentration of HF, the gas contact portion of the WET E.P 100 may be made of Hastelloy C-276 material.

8 is a view showing an example of the heat exchanger 200 in the pretreatment device for the regeneration of a special gas.

The heat exchanger 200 may heat the low-temperature gas flowing in from the Wet E.P 100 to a first temperature by heat exchange and discharge it to the heating chamber 300 . The gas discharged to the rear end of the catalyst processing chamber 400 is returned and provided to the heat exchanger 200 , and may be first cooled by heat exchange with the low-temperature gas introduced from the Wet E.P 100 .

The heat exchanger 200 may recover energy required for catalyst treatment to reduce operating costs. The temperature of the gas of about 25 ℃ flowing in from the WET EP 100 is raised to about 450 ℃ (the first temperature) in the heat exchanger 200, and the temperature is raised in advance before flowing into the catalyst processing chamber 400 to treat the catalyst. Energy for the required temperature (700 ° C. or higher) can be stored in advance, and after the catalytic reaction, the temperature before going out to the cooling chamber 500 (Cooling Chamber) is lowered (primary cooling) to increase the efficiency of the post-processing.

9 is a view showing an example of the heating chamber 300 in the pre-processing apparatus for regenerating a special gas.

The heating chamber 300 may further increase the temperature of the inlet gas heated to the first temperature from the heat exchanger 200 to a second temperature required for catalyst treatment to be supplied to the catalyst treatment chamber 400 .

In order to prevent energy loss, an internal heater can be designed as an internally inserted type. For example, the heating chamber 300 may be heated to a second temperature by heating with a cartridge heater 301 (Cartridge Heater) inserted therein.

The low-temperature gas introduced from the Wet E.P 100 is 23 degrees to 26 degrees (℃), the first temperature is 400 degrees to 500 degrees, and the second temperature may be 700 degrees or more, preferably 750 degrees or more.

FIG. 10 is a view showing an example of a catalyst treatment chamber 400 in a pretreatment device for regenerating a special gas. 11 is a view showing the decomposition performance of CF4 according to the reaction temperature in the catalyst treatment chamber 400 . 12 is a view showing the decomposition performance of SF6 according to the reaction temperature in the catalyst treatment chamber 400 .

The catalyst treatment chamber 400 may oxidize CH4 and CF4 among the high-temperature gas introduced from the heating chamber 300 using a catalyst, and then discharge it as CO2, H2O, and F2.

A gas of high temperature (750° C.) may be introduced from the heating chamber 300 into the catalyst processing chamber 400 to cause a catalytic reaction. The catalyst treatment chamber 400 needs to be designed to be effective in preventing corrosion and heat loss of the space to be treated, and the catalyst volume and space velocity verified through a pre-test can be applied.

The catalyst processing chamber 400 may be coated with STS316 + inner Al2O3.

11 and 12 show examples of the catalyst (Purelyst PFC-101) used in the catalyst treatment chamber 400, experimental conditions, and decomposition performance according to the examples.

11 and 12 , the process temperature of the catalyst processing chamber 400 may be 700 degrees or more, preferably 750 degrees or more.

13 is a view showing an example of the arrangement of the cooling chamber 500, the adsorption chamber 600, and the zeolite chamber 700 in the pre-processing apparatus for regenerating a special gas.

As shown in FIGS. 4 to 6 and 13 , the adsorption chamber 600 and the zeolite chamber 700 may be configured as one body or may be configured to be separated from each other.

The cooling chamber 500 may cool the high-temperature gas introduced from the catalyst processing chamber 400 to a temperature suitable for the operational efficiency of the post-treatment before being introduced into the post-treatment.

For example, the cooling chamber 500 may perform secondary cooling of the return gas primarily cooled by the heat exchanger 200 using PCW to discharge it to 40 degrees or less. Due to CF4 decomposed in the catalyst processing chamber 400 , a high concentration of HF may be introduced into the cooling chamber 500 to cause corrosion. Therefore, it is preferable to secure corrosion resistance by applying Hastelloy C-276 to the inside of the cooling chamber 500 .

14 is a view showing an example of the adsorption chamber 600 in the pretreatment device for the regeneration of a special gas.

The adsorption chamber 600 may remove HF and F2 from the gas discharged from the cooling chamber 500 to increase the purity of the special gas.

In the case of HF removal, the treatment shown in Table 1 below is possible.

item HF Absorbent Gas flow 45㎥/month Estimated Emissions Absorbent performance HF > 100ℓ/ℓ-Reagents 2 months replacement required 2㎡

15 and 16 are views illustrating an example of a zeolite chamber 700 in a pre-processing apparatus for regenerating a special gas.

The zeolite chamber 700 removes CO, CO2, H2O, etc. from the gas discharged from the adsorption chamber 600, thereby increasing the purity of the special gas.

The zeolite chamber 700 may be designed for the purpose of removing CO, CO 2 , and H 2 O, as shown in FIG. 15 . For example, capacity can be designed based on 20-day operation of zeolite (wt 5%) adsorption based on CO, CO2, and H2O concentrations. When adsorption performance is reduced, operating standards can be reduced.

The zeolite chamber 700 may have, for example, a configuration as shown in FIG. 16 . The canister can be filled with zeolite for CO, CO2, and H2O absorption/desorption to perform the process. The N2 line can be used to desorb the adsorbed CO, CO2, and H2O. The heat exchanger may cool and discharge the desorbed CO, CO2, and H2O gas temperatures. The automatic valve can automatically control the adsorption/desorption process.

17 is a flowchart illustrating a pretreatment method for regenerating a special gas used in a semiconductor manufacturing process according to an embodiment of the present invention. 18 is a view showing an example of operation data of a pre-processing apparatus and pre-processing method for regenerating a special gas used in a semiconductor manufacturing process according to an embodiment of the present invention.

A pretreatment method for regenerating a special gas used in a semiconductor manufacturing process may be performed using the pretreatment apparatus described with reference to FIGS. 1 to 16 .

First, among the exhaust gas including the special gas discharged from the semiconductor manufacturing process, the particulate matter, SiF4, HF, F2 is removed by using the Wet E.P 100 (S10). This process can make the target efficiency more than 90%.

The gas treated by the wet EP 100 is heated to a first temperature by exchanging heat with the return gas from the catalyst processing chamber 400 using the heat exchanger 200, and then provided to the heating chamber 300, and subjected to heat exchange. The return gas cooled primarily by the cooling chamber 500 is provided (S20). This process can be done with a heat recovery efficiency of 50% or more.

The gas heated to the first temperature from the heat exchanger 200 is heated to the second temperature by the heating chamber 300 and provided to the catalyst processing chamber 400 (S30). In this process, the target temperature can be set to 700~850 degrees.

At least one of CH4 and CF4 is decomposed in the gas heated to the second temperature to increase the purity of the special gas (S40). This process can make the target efficiency more than 90%.

Thereafter, the return gas firstly cooled by the heat exchanger 200 is secondarily cooled by the cooling chamber 500 (S50). This process can bring the exhaust temperature target to 40 degrees or less.

Next, at least one of HF and F2 is removed from the secondary cooled gas discharged from the cooling chamber 500 by using the adsorption chamber 600 including the absorbent material to improve the purity of the special gas (S60). This process can make the target efficiency more than 95%.

Thereafter, the purity of the special gas may be further increased by removing at least one of CO, CO2 and H2O from the gas discharged from the adsorption chamber 600 using the zeolite chamber 700 (S70). This process can make the target efficiency more than 99%.

Next, while maintaining the operating pressure through the fan 800 (fan), it is possible to deliver the exhaust gas from the zeolite chamber 700 to the gas regeneration system (S80).

The above description of the present invention is for illustration, and those of ordinary skill in the art to which the present invention pertains can understand that it can be easily modified into other specific forms without changing the technical spirit or essential features of the present invention. will be. Therefore, it should be understood that the embodiments described above are illustrative in all respects and not restrictive. For example, each component described as a single type may be implemented in a distributed manner, and likewise components described as distributed may be implemented in a combined form.

The scope of the present invention is indicated by the following claims, and all changes or modifications derived from the meaning and scope of the claims and their equivalents should be construed as being included in the scope of the present invention.

10: Pre-treatment device for special gas regeneration
100 : Wet EP
200: heat exchanger
300: heating chamber
400: catalyst processing chamber
500: cooling chamber
600: adsorption chamber
700: zeolite chamber
800 : fan

Claims (10)

In the pretreatment device for the recovery of a special gas used in the semiconductor manufacturing process,
a catalyst treatment chamber for receiving a gas that has undergone a pre-purification treatment with respect to the exhaust gas in which the special gas exhausted from the semiconductor manufacturing process is diluted, and decomposing at least one of CH4 and CF4;
a heating chamber provided at the front end of the catalyst treatment chamber to increase the temperature of the gas introduced into the catalyst treatment chamber;
It is provided at the front end of the heating chamber and heat exchanges between the pre-purified gas and the return gas discharged from the catalyst treatment chamber to increase the temperature of the pre-purified gas and deliver it to the heating chamber, and the return gas is 1 car cooling heat exchanger;
a cooling chamber for secondary cooling the return gas, which has been primarily cooled by the heat exchanger;
an adsorption unit for removing at least one of HF, F2, CO, CO2 and H2O from the secondary cooled gas discharged from the cooling chamber; and
A pretreatment device for special gas regeneration used in a semiconductor manufacturing process, characterized in that it includes a fan that maintains the operating pressure and delivers the exhaust gas from the adsorption unit to the gas regeneration system.
The method according to claim 1,
The adsorption unit,
an adsorption chamber for removing at least one of HF and F2 using an absorber from the secondary cooled gas discharged from the cooling chamber; and
and a zeolite chamber for removing at least one of CO, CO2 and H2O from the gas discharged from the adsorption chamber.
The method according to claim 1,
The special gas includes PFCs, or Xe,
Among the exhaust gas containing the special gas discharged from the semiconductor manufacturing process, as the pre-purification treatment, Wet EP for removing particulate matter, SiF4, HF, F2, is used in the semiconductor manufacturing process. Pretreatment unit for special gas regeneration.
4. The method according to claim 3,
Pretreatment device for special gas regeneration used in the semiconductor manufacturing process, characterized in that the exhaust gas discharged from the vacuum pump of the semiconductor manufacturing process is introduced into the Wet EP after being treated by a POU scrubber.
4. The method according to claim 3,
The heat exchanger heats the low-temperature gas flowing in from the wet EP to a first temperature by the heat exchange and discharges it to the heating chamber,
The heating chamber is used in the semiconductor manufacturing process, characterized in that the inlet gas heated to the first temperature from the heat exchanger is further heated to a second temperature required for the catalyst treatment and supplied to the catalyst treatment chamber. Pretreatment unit for special gas regeneration.
6. The method of claim 5,
The heating chamber is heated with a cartridge heater (Cartridge Heater) inserted therein, characterized in that the temperature is raised to the second temperature, a pre-processing device for special gas regeneration used in the semiconductor manufacturing process.
6. The method of claim 5,
The catalyst treatment chamber oxidizes CH4 and CF4 in the high-temperature gas flowing from the heating chamber using a catalyst, and discharges it as CO2, H2O, F2. Special gas regeneration used in the semiconductor manufacturing process preprocessor for
8. The method of claim 7,
The low-temperature gas flowing from the Wet EP is 23 degrees to 26 degrees,
The first temperature is 400 degrees to 500 degrees,
The second temperature is 700 degrees or more, characterized in that, a pre-processing device for the regeneration of a special gas used in the semiconductor manufacturing process.
The method according to claim 1,
The cooling chamber is a pre-processing apparatus for regenerating a special gas used in a semiconductor manufacturing process, characterized in that the second cooling using PCW to the return gas cooled primarily by the heat exchanger to 40 degrees or less.
In the pretreatment method for the regeneration of a special gas used in the semiconductor manufacturing process,
removing particulate matter, SiF4, HF, and F2 from the exhaust gas containing PFCs or Xe as a special gas discharged from the semiconductor manufacturing process, using Wet EP;
The gas treated by the wet EP is heated to a first temperature by exchanging heat with the return gas from the catalyst treatment chamber using a heat exchanger, and then provided to the heating chamber, and the return gas cooled primarily by heat exchange is transferred to the cooling chamber providing;
heating the gas heated to the first temperature from the heat exchanger to a second temperature by the heating chamber and providing the gas to the catalyst processing chamber;
decomposing at least one of CH4 and CF4 by treating the gas heated to the second temperature with a catalyst processing chamber;
secondarily cooling the return gas firstly cooled by the heat exchanger by the cooling chamber;
removing at least one of HF and F2 from the secondary cooled gas discharged from the cooling chamber using an adsorption chamber including an absorber; and
A pretreatment method for regeneration of a special gas used in a semiconductor manufacturing process, comprising the step of removing at least one of CO, CO2 and H2O from the gas discharged from the adsorption chamber using a zeolite chamber.

Images