KR102316360B1 - Sputtering target and production method - Google Patents

Abstract

The present invention relates to a sputtering target composed of a Mo alloy containing at least one group 5 metal of the periodic table, wherein the average content of the group 5 metal is 5 to 15 at% and the Mo content is 80 ≥ at%. The sputtering target has an average C/O ratio of ≧1 (at%/at%). The sputtering target according to the present invention can be produced by molding and can have improved sputtering behavior.

Description

Sputtering target and manufacturing method

The present invention is a sputtering target comprising molybdenum (Mo) and at least one group 5 metal of the periodic table, wherein the average content ( _CM ) of the group 5 metal is 5 to 15 at% and the Mo content is ≥80 at%. it's about

Sputtering, also called cathode atomization, is a physical process in which atoms separated from a sputtering target by collision with high-energy ions are transferred to a gas phase. A sputtering target composed of Mo and containing a Group V metal is known. According to this, EP 0 285 130 A1 describes a sputtering target consisting of a Mo alloy containing 50 to 85 at% of tantalum (Ta). JP 2002 327264 A consists of a Mo alloy containing 2 to 50 at% of niobium (Nb) and/or vanadium (V) and having a relative density of >95%, a flexural strength of >300 MPa and a grain size of <300 μm. Disclosed is a sputtering target. The sputtering target has a diffusion phase and at least one pure phase or only a diffusion phase. JP 2005 307226 A discloses a sputtering target composed of a Mo alloy containing 0.1 to 50 at% of a transition metal. The sputtering target has a length of ≧1 m and a homogeneous density of ≧98%. In contrast, JP 2005 307226 A discloses a sputtering target having a compositional variation of ? 20% over the entire length.

Mo-Nb and Mo-Ta sputtering targets are used, for example, to produce electrode layers for thin film transistors or contact layers for touch panels. Satisfying the increasing demands in terms of layer quality and homogeneity and the ever-growing dimensions are the goals of many development activities.

Accordingly, JP 2008 280570 A describes a method of preparing a Mo-Nb sputtering target having an Nb content of 0.5 to 50 at%, first preparing a Mo sintered body, and then crushing it to obtain a powder. The Mo powder thus prepared is reduced and mixed with Nb powder. This mixture is then densified by hot isostatic pressing. Although this method can reduce the oxygen content of the powder, it does not further reduce the oxygen content in the sputtering target because hot isostatic forming is carried out in a closed container (can). It is also not possible to disperse Nb in Mo with the homogeneity required for many applications.

On the other hand, JP 2005 290409 A is a sputtering target composed of a Mo alloy containing 0.5 to 50 at% of a metal selected from the group consisting of Ti, Zr, V, Nb and Cr, and oxygen contained in the target is a Mo-rich phase / A sputtering target is described that exists in the form of an oxide in the interfacial region of an alloying element-rich phase. A preferred manufacturing method for producing this includes mixing Mo powder and powder of alloying element, sintering, crushing the sintered body to obtain a powder, and densifying the powder prepared in this way by hot isostatic pressing in a sealed state. do. The oxide has an adverse effect on the homogeneity of the sputtering target during hot forming because the grain boundary diffusion rate decreases. The oxide also has an adverse effect on the sputtering behavior.

JP 2013 83000 A discloses a sputtering target composed of a Mo alloy containing 0.5 to 60 at% of one or more elements selected from the group consisting of Ti, Nb and Ta by mixing Mo powder and hydrate powder of the alloying element, and the mixture It describes manufacturing by degassing at 300°C to 1000°C and then densifying by hot isostatic forming. Although the hydrate powder decomposes to form a metal powder during degassing, oxygen is adsorbed on the surface of the powder particles during the further processing step and absorbed again. This oxygen is not removed during hot isostatic pressing.

Said sputtering targets do not meet the increasing requirements with respect to layer homogeneity, homogeneity of sputtering behavior and prevention of undesirable localized partial melting. Local partial melting takes place, for example, by arc processes (local formation of an electric arc).

The above-described manufacturing technique cannot produce a sputtering target satisfying the above-mentioned requirements for at least one of the following reasons:

a) oxides hinder grain boundary diffusion;

b) oxygen cannot be removed during the consolidation process;

c) the alloying elements are not sufficiently homogenized due to the consolidation process;

d) the interfacial and grain boundary volumes and defect densities are not high enough, in part due to sufficiently high diffusion rates;

e) the particles become unacceptably high due to the consolidation process;

f) A coarse particle sputtering target is obtained due to the powder used.

It is an object of the present invention to provide a sputtering target which satisfies the above-mentioned requirements and/or is free from the above-mentioned defects. In particular, it is an object of the present invention to provide a sputtering target capable of producing a layer that is very homogeneous in terms of both the chemical composition and the layer thickness distribution and is not prone to localized partial melting as a result of the arc process. In addition, the sputtering target should have a uniform sputtering behavior. In this context, uniform sputtering behavior means that individual particles or individual regions of the sputtering target can be removed at the same rate, so that relief structures are not formed in the regions of the sputtered surface during the sputtering process.

Another object of the present invention is to provide a manufacturing route that enables the manufacture of sputtering targets having the above-mentioned properties in a simple and consistent process manner.

Said object is achieved by the independent claims. Certain embodiments are described in the dependent claims.

The sputtering target includes Mo and at least one group 5 metal of the periodic table. Group 5 metals are Ta, Nb and V. The average content (C _M ) of Group 5 metals is between 5 and 15 at% while the Mo content is ≥80 at%. The Group 5 metal is preferably completely dissolved in Mo, which has a favorable effect on the uniform sputtering behavior. In this context, complete dissolution means that the content of Group V metals present in elemental form (as Ta, Nb and/or V particles) or as oxides is <1% by volume. The sputtering target has an average C/O (carbon/oxygen) ratio of ≧1, preferably ≧1.2 in at%/at%. In order to determine the average C/O ratio, three samples are taken from the center and the corner from the sputtering target, respectively, and the average is calculated. Carbon is determined by combustion analysis (CA) and oxygen is determined by carrier gas thermal extraction (HE). In the following text, the average C/O ratio is referred to as the C/O ratio.

Group 5 metals in a dissolved state have a strong mixed crystal-hardening effect on Mo. The mixed crystal hardening is associated with significant reductions in ductility and formability. Two-phase (Mo-rich phase + Group 5 metal-rich phase) alloys can be machined in a simpler and more consistent process manner by forming because the Group 5 metal-rich phase has a ductile effect, but it is a very homogeneous mixing In the case of crystalline alloys this has not been possible so far. In this case, the molding step can be included in the manufacturing process with a C/O ratio of ≥ 1, but at a C/O ratio of <1, process reliability is not produced to a sufficient extent by molding. The reason is probably because the grain boundary strength increases due to the C/O ratio of ≥ 1, and consequently grain boundary cracking can be avoided. How the shaping step has a positive effect on the properties of the sputtering target will be described in detail below. Thus (at%/at%) allows for the first time to combine the positive effect of alloy homogeneity and forming texture in one product by a C/O ratio of ≥1. A C/O ratio of ≧1 surprisingly has a positive effect on the molded sputtering target as well as a favorable influence on the sputtering behavior of the sputtering target which is sintered only or densified by sintering and hot isostatic forming. At this time, the hot isostatic pressure forming is preferably performed without using a can.

How the C/O ratio of ≥ 1 can be set in a consistent process manner will be described later in detail. The oxygen content in the sputtering target may be set low by a C/O ratio of ≧1. It is possible to achieve an oxygen content of ?0.04 at%, preferably ?0.03 at%, particularly preferably ?0.02 at%. Preferably, the sputtering target is free of oxides. In this way, an undesirable arcing process can be reliably avoided. In this regard, the absence of oxide means that the number of detectable oxide particles in an area ^{of 0.01 mm 2} in an enlarged photograph by a scanning electron microscope at a magnification of 1000× is ≤1. The number of detectable oxide particles in an area of 0.1 mm ^{2 is preferably ≤1.}

Furthermore, the sputtering target preferably has a molded structure. Molding tissue, as the name suggests, comes from the molding process. The formed structure is not lost in subsequent heat treatment, for example, recovery heat treatment or recrystallization heat treatment. Therefore, the sputtering target of the present invention may be in a state immediately after molding, recovery, partially recrystallized or fully recrystallized. The forming structure may be due to, for example, a rolling, forging or extrusion process. The forming process forms particles having the same or similar orientation to a significant extent relative to the surface of the sputtering target. This makes the sputtering behavior uniform because the removal rate depends on the orientation of the particles.

It is also advantageous for the uniform sputter removal to the molded tissue to have the following main orientation:

a. Forming direction: 110

b. perpendicular to the forming direction: at least one orientation selected from the group consisting of 100 and 111

As is possible in the case of plate-like geometries, the forming direction is understood to be the direction in which the larger forming (with a higher formability) was made if the direction was changed during forming. The main orientation is understood to be the orientation with the greatest intensity. The intensity is typically 1.5 times, preferably 2 times greater than the random intensity. The molded tissue is determined by SEM (scanning electron microscope) and EBSD (electron backscatter diffraction). For this purpose, the sample is installed at an angle of 70°. The incident primary electron beam is inelastically scattered by the atoms of the sample. Constructive interference occurs when some electrons collide with the lattice plane to satisfy the Bragg condition. This amplification takes place for all lattice planes in the crystal, so the resulting diffraction pattern (electron backscattering pattern, also known as Kikuchi pattern) contains all angular relationships within the crystal and thus the crystal symmetry. The measurement is carried out under the following conditions:

- Acceleration voltage: 20 kV,

- orifice 120 μm,

- 22 mm moving distance

- High Current Mode - Enabled

- Scanning area: 1761×2643 ㎛ ²

- index step: 3 μm.

The preferable density of the sputtering target relative to the theoretical density of each composition is >88% in a state where only sintering is made, >96% in a state where sintering and hot isostatic densification are made, and >99.5%, preferably >99.9% in a molded state am. The high density also enables arc-free sputtering with a low oxygen content.

_{Furthermore, the d 50} of the particle size distribution measured perpendicular to the final forming direction. and d ₉₀ advantageously satisfy the relation d ₉₀ /d _{50 ≤5.}

d ₉₀ /d ₅₀ is preferably ≤3 and particularly preferably ≤1.5.

For grain size determination, an abrasive part is made and grain boundaries are visualized by EBSD. Next, average and maximum particle sizes are evaluated by quantitative metallography. The evaluation is carried out according to ASTM E 2627-10. A grain boundary is defined as a difference in orientation between two adjacent grains of ≧5°. The _{particle size distribution with d 90} and d ₅₀ is determined by quantitative image analysis. The narrow particle size distribution was found to have a very positive effect on the homogeneity of the sputtering behavior. Compared to other materials, the Mo-5 metal sputtering target sputters excitation particles with relatively large particle diameters to a greater extent than particles with smaller particle diameters. The cause is still unclear, but it may be due to different defect densities or channeling effects (lattice-induced effects - ion penetration due to linear regions devoid of lattice atoms). This undesirable non-uniform sputtering behavior can almost be prevented by the _{above-mentioned d 90} /d _{50 ratio.}

Group 5 metals are not only completely soluble in Mo, but also very uniformly soluble. The standard deviation (σ) of the distribution of Group V metals as measured by SEM/WDX preferably _{satisfies the relation σ≦C M} ×0.15, in particular σ≦C _M ×0.1.

Since the sputtering rate depends on the content of each alloying element, the sputtering target according to the present invention having a very homogeneous Group V metal distribution has an extremely uniform sputtering behavior. As a result of such a uniform sputtering behavior, a layer having an extremely homogeneous thickness distribution is firstly prepared, and then a sputtering target is obtained in which a low surface roughness/irregularity is always formed even after long-term use. This is also a prerequisite for a uniform sputtering behavior over a long period of time.

Further, the Group 5 metal is preferably Ta and/or Nb. Mo-Ta and Mo-Nb alloys have particularly favorable corrosion and etching behavior. The alloy advantageously consists of Mo and 5 to 15 at% of a Group V metal and typical impurities. Typical impurities are any impurities that are usually present in the raw material or can be attributed to the manufacturing process.

The sputtering target according to the invention is particularly advantageously configured as a tubular target. It has been found that in conventional sputtering conditions for tubular targets, microstructural characteristics such as oxide, homogeneity or average grain size to maximum grain size ratio have a greater effect than for planar targets.

The sputtering target of the present invention can be manufactured in a particularly simple and consistent manner when the manufacturing method comprises the following steps:

- preparing a powder mixture comprising:

i. ≥80 at% Mo powder;

ii. a powder of at least one group 5 metal having a content of 5 to 15 at% in the powder mixture; and

iii. C source in which the amount of C is selected such that the total content of C expressed in at% (Σ _C ) and the total content of O expressed in at% (Σ _O ) in the _{powder mixture satisfy the relation 0.2≤Σ C} /Σ _{O ≤1.2} ; and

- compacting the powder mixture.

It is possible to set the _{C /O} ratio in the sputtering target to ≧1 by the Σ C /Σ O ratio in the range of 0.2 to 1.2. Preferably oxygen is reacted with carbon and hydrogen to remove oxygen during further processing steps.

The total oxygen content (Σ _O ) in the powder mixture includes the oxygen content of the Mo powder and the oxygen content of the group 5 metal. Oxygen is mainly present in the adsorbed form on the surface of the powder particles. In the case of conventional production and storage, the oxygen content of Mo powder at a Fisher particle size of 2 to 7 μm is typically 0.1 to 0.4 at%. In the case of a Group 5 metal having a particle size of 4 to 20 μm measured by the Fisher method, the oxygen content is typically 0.3 to 3 at%. The total carbon content (Σ _C ) includes the carbon content of the Mo powder, the carbon content of the Group 5 metal, and the carbon content of the C source. The carbon source may be, for example, carbon black, activated carbon or graphite powder. However, the carbon source may also be a carbon emitting compound, for example Nb carbide or Mo carbide.

The oxygen and carbon content of the powder used is first determined by a conventional method, and then the required amount of the powder of source C is determined. Next, the powders are mixed and compacted by a conventional method. In this context, the term compaction refers to a process leading to densification. Consolidation is preferably carried out by cold isostatic forming and sintering. In this context, the term sintering refers to a process in which densification is due only to the action of heat and not to pressure (eg as in the case of hot isostatic forming).

During the heat treatment, preferably the sintering process, the carbon of the carbon source reacts with the oxygen present in the powder _{to form CO 2} and smaller amounts of CO. This reaction preferably takes place at a temperature at which the sintered body still has an open porosity. A densification process in which the material to be densified is present in the can, for example in the case of hot isostatic forming, is not very suitable for advantageous use of the method of the present invention. In the case of performing hot isostatic pressing using a can, the powder mixture of the present invention needs to be separately heat treated/degassed.

The total carbon content (Σ _C ) and the total oxygen content (Σ _O ) in the powder preferably satisfy the following relation:

0.4 ≤ _{Σ C} /Σ _O ≤ 1.1, particularly preferably 0.6 _{≤ Σ C} /Σ _O ≤ 1.

This allows in particular very high process reliability to be achieved.

It is advantageous for the molding process to be carried out at a pressure of 100 to 500 MPa. If the pressure is <100 MPa, sufficient density cannot be achieved during sintering. At a pressure of >500 MPa, the compounds resulting from the reaction of carbon and oxygen are not transported from the sinter body quickly enough during the sintering process because the gas permeability is too low. The sintering temperature range is preferably from 1800°C to 2500°C. At a temperature below 1800°C, the sintering time becomes very long or the density and homogeneity become unsatisfactory. Temperatures above 2500° C. show grain growth which undesirably affects the favorable homogeneity of the particle size distribution.

The advantageous particle size of the Mo powder is 2 to 7 μm and in the case of the Group 5 metal powder is 4 to 20 μm. The particle size is determined by the Fisher method. When the particle size of the Group 5 metal is >20 μm, the alloy has an increased tendency to form Kirkendall pores when using the pressure-free densification process. When the powder particle size of the group 5 metal is <4 μm, the oxygen content (oxygen adsorbed on the surface of the powder particles) is too high and an advantageous low oxygen value can be achieved only by an expensive manufacturing step, for example, a special degassing step. .

When the particle size of the Mo powder exceeds 7 μm, a decrease in sintering activity appears. When the particle size is less than 2 mu m, the gas permeability of the green body is greatly deteriorated. In addition, the substrate begins to sinter at a relatively low temperature. Both of these effects exacerbate the removal of oxygen during the sintering process.

The powder mixture preferably contains no alloying elements other than Mo, a Group 5 metal and a carbon source. Impurities are present in ranges typical of these materials.

If additional alloying elements are used, their total content shall not exceed 15 at%. Alloying elements that do not have an adverse effect on sputtering and etching behavior have been found to be useful. Mention may be made, for example, of W and Ti as suitable alloying metals.

The sintering is advantageously carried out in a vacuum in an inert atmosphere and/or a reducing atmosphere. An inert atmosphere in this context is a gaseous medium which does not react with alloying components, for example an inert gas. A suitable reducing atmosphere is in particular hydrogen. The reaction of C with O to form CO ₂ and/or CO is advantageously carried out, for example, in a vacuum or in an inert atmosphere during the heating process. The reaction product thus formed can be efficiently removed. In addition, the formation of hydrates of the Group 5 metal is prevented. Next, the final sintering is preferably carried out under a reducing atmosphere, preferably hydrogen, for at least a temporary time.

After consolidation, a forming process is performed. Molding can be performed by, for example, rolling in the case of a flat target, and extrusion or forging in the case of a tubular target. A preferred formability is 45 to 90%. Formation is defined as:

(A _a -A _u )/A _a ×100 (unit %)

A _a ...cross-sectional area before molding

A _u ...cross-sectional area after forming

At a formability <45%, the density and uniformity of sputtering behavior are adversely affected. A formability of >90% has an adverse effect on manufacturing costs. The molding temperature is preferably between 900° C. and 1500° C. for at least a temporary time. Transient time in this context means, for example, carrying out the first shaping step at said temperature. Then, the molding temperature may be less than 900°C. Molding may be carried out in one or a plurality of steps.

When the sputtering target is configured as a planar target, it is preferable to solder to a back plate. The tubular target is preferably joined once again to the support tube by means of a brazing process or can be used as an integral sputtering target. It is preferable to use indium or an indium-rich alloy as the brazing material.

Hereinafter, the present invention will be illustrated by way of a preparation example.

1 shows a WDX-scanned scanning electron micrograph of rolled Mo-10 at% Nb.

The following powders were used for this purpose:

- Mo powder with Fischer particle size of 4.5 ㎛, oxygen content 0.24 at% and carbon content 0.03 at%

- Nb powder with a Fischer particle size of 8 ㎛, oxygen content of 1.26 at% and carbon content of 0.46 at%

In an amount of 758 kg Mo and 81.6 kg Nb, 0.336 kg of carbon black powder having a Fischer particle size of 0.35 μm was mixed with the Mo and Nb powder in a mechanical mixer to achieve a _{Σ C} /Σ _{O value of 0.7.} Four plates were prepared from this powder mixture by cold isostatic pressing at a molding pressure of 180 MPa. The plate was sintered at a temperature of 2150°C with a heating process carried out in vacuum over 3 hours to a temperature of 1200°C. _{Thereafter, H 2} was used as a process gas. The sintered body had a density of 8.9 g/cm ³ (88.6% of the theoretical density), a C content of 0.022 at% and an O content of 0.018 at%. The C/O ratio was 1.22.

The sintered body was inspected by SEM/EDX. Nb and Mo are completely dissolved by mixing with each other. No oxides could be detected.

Next, the sintered body was rolled, wherein the forming temperature was 1450° C. and the forming degree was 78%. Specimens were taken from the rolled plate and ground and polished by conventional metallographic methods. The tissue of the longitudinal specimens was determined by SEM/EBSD.

To do this, set it up as follows:

- Acceleration voltage: 20 KV,

- Movable distance: 22 mm,

- enable high current mode,

- Orifice 120 ㎛

- Scanning area 1761×2643 ㎛ ²

- index step 3 μm.

As a result of the evaluation of the inverse pole viscosity, 110 was shown as the main structure at >2×random in the longitudinal direction (molding direction). Both 100 and 111 orientations in the vertical direction (perpendicular to the forming direction) were measured at >2×random.

Particle size on the cross section was determined by EBSD. A grain boundary was defined as any difference in grain orientation between two adjacent grains of >5°. The particle size distribution was determined by quantitative image analysis. In the evaluation area of 20000 μm ² _{, d 50} was 15 μm and d ₉₀ was 35 μm. d ₉₀ /d ₅₀ The rain was 2.3. Similar measurements were taken at 10 different locations and averaged d ₉₀ /d ₅₀ rain was determined. d ₉₀ /d ₅₀ The rain was 2.41. The rolled plates were also examined by SEM/EDX and SEM/WDX to determine the homogeneity of the Nb distribution. 1 shows a WDX scan over a distance of 1 mm. The standard deviation of the Nb distribution measured over this distance was 1.02 at%. The sputtering behavior of the sputtering target thus prepared was determined by sputtering experiments at an Ar (argon) pressure in the range of ^{2.5×10 3} to 1×10 ^{-2 mbar and an output of 400 or 800 watts.} Soda-lime glass was used as the substrate material. The sputtering target could be sputtered without performing an arc process. The specific electrical resistance of the deposited layer (layer thickness = 200 nm) was low and ranged from 13.7 to 18.5 μΩcm depending on the sputtering conditions. The layer had a compressive stress in the range of -1400 to -850 MPa.

- Drawing translation -

in Figure 1

High voltage → high voltage

Enlargement → magnification

Working distance → Working distance

Signal → signal

Nb content → Nb content

% by weight → % by weight

Claims (22)

A sputtering target composed of a Mo alloy comprising at least one Group V metal of the periodic table, prepared by consolidation from a powder mixture, wherein the average content ( _CM ) of the Group 5 metal is 5 to 15 at% and the Mo content 80 ≥at% but with an average C/O ratio of ≥1 (at%/at%),
The Group 5 metal is completely dissolved in Mo,
no oxide,
The group 5 metal is uniformly distributed in the solution, and the standard deviation (σ) of the group 5 metal distribution is the following relation:
σ≤C _M ×0.15
is satisfied with
The sputtering target has a molded structure,
A sputtering target, characterized in that _{d 50} and d ₉₀ of the particle size distribution measured perpendicular to the final forming direction satisfy the relational expression d ₉₀ /d _{50 ≤5.} The sputtering target according to claim 1, characterized in that the shaped tissue has a major orientation as follows:
a. Forming direction: 110
b. Normal to forming direction: at least one orientation selected from the group consisting of 100 and 111. 3. Sputtering target according to claim 1 or 2, characterized by an O content of ≤ 0.04 at%. 3. Sputtering target according to claim 1 or 2, characterized in that the relative density is >99.5% of the theoretical density. The sputtering target according to claim 1 or 2, wherein the Group 5 metal is Ta or Nb. The sputtering target according to claim 1 or 2, characterized in that it consists of 5 to 15 at% of a Group 5 metal, the balance of Mo and typical impurities. The sputtering target according to claim 1 or 2, characterized in that it is a tubular target. A method of manufacturing a sputtering target according to claim 1 comprising the steps of:
a. preparing a powder mixture comprising:
i. ≥80 at% Mo powder;
ii. a powder of at least one group 5 metal having a content of 5 to 15 at% in the powder mixture; and
iii. C source in which the amount of C is selected such that the total content of C expressed in at% (Σ _C ) and the total content of O expressed in at% (Σ _O ) in the _{powder mixture satisfy the relation 0.2≤Σ C} /Σ _{O ≤1.2} ; and
b. compacting the powder mixture, and
c. performing the forming process. 9. The method of claim 8, wherein the consolidation is
a. The powder mixture is molded at 100 to 500 MPa to obtain a green body,
b. Method for producing a sputtering target, characterized in that carried out by sintering the green body at a temperature of 1800 ° C < T < 2500 ° C. The method for manufacturing a sputtering target according to claim 8, wherein the Mo powder has a particle size of 2 to 7 μm measured by a Fischer method, and the Group 5 metal has a particle size of 4 to 20 μm measured by a Fischer method. . The method according to claim 8, wherein Σ _C and Σ _O satisfy the following relational expression:
0.4≤Σ _C /Σ _O ≤1.1 9. A method according to claim 8, characterized in that the powder mixture contains no further alloying elements other than typical impurities. The method for manufacturing a sputtering target according to claim 8, wherein the molding is performed with a molding degree of 45 to 90% by rolling, extrusion or forging. The method for manufacturing a sputtering target according to claim 8, wherein the sintering is performed in at least one atmosphere selected from a vacuum, an inert atmosphere, and a reducing atmosphere. 15. The production of a sputtering target according to claim 14, wherein the sintering is carried out at least temporarily during the heating process in at least one atmosphere selected from vacuum and inert atmosphere and at least temporarily during a time held at the sintering temperature in a reducing atmosphere. Way. delete delete delete delete delete delete delete

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