KR102315283B1 - Metal oxide thin film containing molybdenum oxide as the main component, and thin film transistors and display devices in which such thin films are formed - Google Patents
Metal oxide thin film containing molybdenum oxide as the main component, and thin film transistors and display devices in which such thin films are formed Download PDFInfo
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- 239000010409 thin film Substances 0.000 title claims abstract description 83
- 229910000476 molybdenum oxide Inorganic materials 0.000 title claims abstract description 23
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 title claims abstract description 23
- 229910044991 metal oxide Inorganic materials 0.000 title abstract description 31
- 150000004706 metal oxides Chemical class 0.000 title abstract description 31
- 238000010438 heat treatment Methods 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 11
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 9
- 229910006404 SnO 2 Inorganic materials 0.000 claims description 8
- 238000001459 lithography Methods 0.000 claims description 3
- 239000000126 substance Substances 0.000 abstract description 16
- 239000000203 mixture Substances 0.000 abstract description 5
- 239000000843 powder Substances 0.000 description 40
- 230000000052 comparative effect Effects 0.000 description 13
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 12
- 239000010949 copper Substances 0.000 description 11
- 239000000758 substrate Substances 0.000 description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 10
- 229910052802 copper Inorganic materials 0.000 description 10
- 239000004033 plastic Substances 0.000 description 7
- 238000005245 sintering Methods 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 238000007580 dry-mixing Methods 0.000 description 6
- 238000005303 weighing Methods 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000011812 mixed powder Substances 0.000 description 3
- 239000013077 target material Substances 0.000 description 3
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000004615 ingredient Substances 0.000 description 2
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- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000000427 thin-film deposition Methods 0.000 description 2
- TVEXGJYMHHTVKP-UHFFFAOYSA-N 6-oxabicyclo[3.2.1]oct-3-en-7-one Chemical compound C1C2C(=O)OC1C=CC2 TVEXGJYMHHTVKP-UHFFFAOYSA-N 0.000 description 1
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical group [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- AZWHFTKIBIQKCA-UHFFFAOYSA-N [Sn+2]=O.[O-2].[In+3] Chemical compound [Sn+2]=O.[O-2].[In+3] AZWHFTKIBIQKCA-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical group [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000000498 ball milling Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000002438 flame photometric detection Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000001151 other effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000007873 sieving Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
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Abstract
Description
본 발명은 금속 산화물 박막에 관한 것으로서, 상세하게는 몰리브덴 산화물을 주된 성분으로 하여 저반사 특성을 가지고 내화학성 및 내열성이 우수한 박막 및 이러한 박막이 형성된 박막트랜지스터와 디스플레이 장치에 관한 것이다.The present invention relates to a metal oxide thin film, and more particularly, to a thin film containing molybdenum oxide as a main component and having low reflection properties and excellent in chemical resistance and heat resistance, and a thin film transistor and a display device having such a thin film formed thereon.
일반적으로 평판 디스플레이(flat panel display; "FPD"), 터치 스크린 패널, 태양 전지, 발광 다이오드(light emitting diode; "LED"), 유기 발광 다이오드(organic light emitting diode; "OLED")에 저반사율의 도전성 박막이 사용되고 있다.Low reflective properties are commonly used in flat panel displays (“FPDs”), touch screen panels, solar cells, light emitting diodes (“LEDs”), and organic light emitting diodes (“OLEDs”). A conductive thin film is used.
이에 대한 소재로서 산화인듐-산화주석(In2O3-SnO2)("ITO")이 대표적이며 ITO 조성물은 가시광선 투과도와 전기 전도율이 높은 도전성 박막을 형성하는 데 사용된다.As a material for this, indium oxide-tin oxide (In 2 O 3 -SnO 2 ) (“ITO”) is representative, and the ITO composition is used to form a conductive thin film having high visible light transmittance and electrical conductivity.
이러한 ITO 조성물은 우수한 저반사율 성능을 가지기는 하지만, 경제성이 떨어지기 때문에 산화인듐의 전부 또는 일부를 대체하는 소재들에 대한 연구가 계속되고 있다.Although such an ITO composition has excellent low reflectance performance, research on materials that replace all or part of indium oxide is ongoing because it is economical.
하지만 이러한 연구들에서 관심이 있는 부분은 타겟 재료를 통해 형성된 박막의 저반사율로서, 장시간 사용에 대한 박막의 신뢰도를 높일 수 있는 내화학성, 내열성의 특성에 대한 고려가 필요하다.However, the area of interest in these studies is the low reflectivity of the thin film formed through the target material, and it is necessary to consider the characteristics of chemical resistance and heat resistance that can increase the reliability of the thin film for long-term use.
본 발명은 몰리브덴 산화물을 주된 성분으로 하고, 저반사 특성을 가지는 동시에 내화학성 및 내열성이 우수한 금속 산화물 박막 및 이러한 금속 산화물 박막이 형성된 박막트랜지스터와 디스플레이장치를 제시한다.The present invention provides a metal oxide thin film containing molybdenum oxide as a main component and having low reflection properties while having excellent chemical resistance and heat resistance, and a thin film transistor and display device having such a metal oxide thin film formed thereon.
그 외 본 발명의 세부적인 목적은 이하에 기재되는 구체적인 내용을 통하여 이 기술분야의 전문가나 연구자에게 자명하게 파악되고 이해될 것이다. Other detailed objects of the present invention will be clearly grasped and understood by experts or researchers in the art through the detailed contents described below.
위 과제를 해결하기 위하여 본 발명은 실시예로, MoO2와 MoO3를 포함하는 몰리브덴 산화물 75~90중량% 및 Nb2O5, Ta2O5, ZrO2, TiO2, SnO2, WO3 중 적어도 1 개 이상의 성분 10~25중량%가 혼합되어 이루어지고, 상기 몰리브덴 산화물에서 MoO2의 함량은 몰리브덴 산화물 중 50~94.1중량%이고, 550nm 파장에 대한 반사율이 6% 이하인 박막을 제시한다.In order to solve the above problems, the present invention is an embodiment, and MoO 2 and MoO 3 75 to 90 wt% of molybdenum oxide containing MoO 3 and Nb 2 O 5 , Ta 2 O 5 , ZrO 2 , TiO 2 , SnO 2 , WO 3 10 to 25% by weight of at least one component is mixed, and the content of MoO 2 in the molybdenum oxide is 50 to 94.1% by weight of the molybdenum oxide, and the reflectance for a 550nm wavelength is 6% or less.
상기 박막은 350℃의 온도에서 30분 이상의 열처리 후에 550nm 파장에 대한 광 반사율의 차이가 7% 이하일 수 있다.The thin film may have a difference in light reflectance with respect to a wavelength of 550 nm of 7% or less after heat treatment at a temperature of 350° C. for 30 minutes or more.
한편 상기 박막은 박막 상에 리소그라피 공정을 수행하였을 때 박막의 손상 깊이가 0.5㎛ 미만일 수 있다.Meanwhile, the thin film may have a damage depth of less than 0.5 μm when a lithography process is performed on the thin film.
위 과제를 해결하기 위하여 본 발명은 실시예로, 상술한 박막이 게이트층, 소스층 및 드레인층으로 이용되는 박막 트랜지스터와 상술한 박막이 형성되는 디스플레이 장치를 제시한다.In order to solve the above problems, the present invention provides a thin film transistor in which the above-described thin film is used as a gate layer, a source layer and a drain layer, and a display device in which the above-described thin film is formed as an embodiment.
본 발명의 실시예에 따른 금속 산화물 박막은, 형성된 박막이 저반사 특성을 가지는 동시에 내화학성 및 내열성이 우수하다. 이에 따라 이러한 박막을 포함하여 이루어지는 박막 트랜지스터 또는 디스플레이장치의 동작 신뢰성을 확보할 수 있다.The metal oxide thin film according to an embodiment of the present invention has excellent chemical resistance and heat resistance while the formed thin film has low reflection properties. Accordingly, it is possible to secure the operational reliability of the thin film transistor or display device including the thin film.
그 외 본 발명의 효과들은 이하에 기재되는 구체적인 내용을 통하여, 또는 본 발명을 실시하는 과정 중에 이 기술분야의 전문가나 연구자에게 자명하게 파악되고 이해될 것이다. Other effects of the present invention will be clearly understood and understood by an expert or researcher in the art through the specific details described below, or during the course of carrying out the present invention.
도 1은 본 발명의 실시예에 따른 금속 산화물 박막의 단면을 나타내는 도면.
도 2는 본 발명의 비교예에 따른 금속 산화물 박막의 단면을 나타내는 도면.1 is a view showing a cross section of a metal oxide thin film according to an embodiment of the present invention.
2 is a view showing a cross section of a metal oxide thin film according to a comparative example of the present invention.
상술한 본 발명의 특징 및 효과는 첨부된 도면과 관련한 다음의 상세한 설명을 통하여 보다 분명해 질 것이며, 그에 따라 본 발명이 속하는 기술 분야에서 통상의 지식을 가진 자가 본 발명의 기술적 사상을 용이하게 실시할 수 있을 것이다. 본 발명은 다양한 변경을 가할 수 있고 여러 가지 형태를 가질 수 있는 바, 특정 실시 예들을 도면에 예시하고 본문에 상세하게 설명하고자 한다. 그러나 이는 본 발명을 특정한 개시형태에 대해 한정하려는 것이 아니며, 본 발명의 사상 및 기술범위에 포함되는 모든 변경, 균등물 내지 대체물을 포함하는 것으로 이해되어야 한다. 본 출원에서 사용한 용어는 단지 특정한 실시 예들을 설명하기 위해 사용된 것으로, 본 발명을 한정하려는 의도가 아니다.The features and effects of the present invention described above will become more apparent through the following detailed description in relation to the accompanying drawings, and accordingly, those of ordinary skill in the art to which the present invention pertains can easily implement the technical idea of the present invention. will be able Since the present invention can have various changes and can have various forms, specific embodiments are illustrated in the drawings and described in detail in the text. However, this is not intended to limit the present invention to a specific disclosed form, it should be understood to include all modifications, equivalents and substitutes included in the spirit and scope of the present invention. The terms used in the present application are only used to describe specific embodiments, and are not intended to limit the present invention.
이하, 본 발명의 일 실시예에 따른 금속 산화물 박막 및 이러한 박막이 형성된 박막트랜지스터와 디스플레이장치에 대해 도면을 참조하여 상세하게 설명한다. 본 명세서에서는 서로 다른 실시예라도 동일유사한 구성에 대해서는 동일유사한 참조번호를 부여하고, 그 설명은 처음 설명으로 갈음한다.Hereinafter, a metal oxide thin film and a thin film transistor and a display device in which the thin film is formed according to an embodiment of the present invention will be described in detail with reference to the drawings. In the present specification, the same and similar reference numerals are assigned to the same and similar components even in different embodiments, and the description is replaced with the first description.
본 발명의 실시예에 따른 금속 산화물 박막은 금속 산화물 소결체를 타겟 재료로 하여 스퍼터링을 수행함으로써 형성할 수 있다.The metal oxide thin film according to an embodiment of the present invention may be formed by performing sputtering using a metal oxide sintered body as a target material.
이때 금속 산화물 소결체는 MoO2와 MoO3를 포함하는 몰리브덴 산화물 75~90중량% 및 Nb2O5, Ta2O5, ZrO2, TiO2, SnO2, WO3 중 적어도 하나 이상의 성분 10~25중량%가 혼합되어 이루어진다. 또한 몰리브덴 산화물에서 MoO2의 함량은 몰리브덴 산화물 100중량% 중에서 50~94.1중량%이다. 한편 이를 MoO2/MoO3 중량% 비율로 나타내면 1~16이 된다.At this time, the metal oxide sintered body is MoO 2 and MoO 3 75 to 90 wt% of molybdenum oxide containing MoO 3 and Nb 2 O 5 , Ta 2 O 5 , ZrO 2 , TiO 2 , SnO 2 , WO 3 At least one component 10 to 25 % by weight is mixed. In addition, the content of MoO 2 in the molybdenum oxide is 50 to 94.1% by weight in 100% by weight of the molybdenum oxide. On the other hand , when expressed in terms of MoO 2 /MoO 3 wt% ratio, it becomes 1 to 16.
이와 같이 이루어진 금속 산화물 소결체는 타겟 재료로 사용하여 박막을 형성하였을 경우 형성된 박막이 저반사 특성을 가지는 것과 동시에 몰리브덴 산화물의 비율과 조성의 최적화를 통해 내화학성, 내열성 특성이 향상된다.When a thin film is formed using the metal oxide sintered body as described above, the formed thin film has low reflection properties, and chemical resistance and heat resistance characteristics are improved through optimization of the ratio and composition of molybdenum oxide.
이하, 각 성분에 대하여 상세하게 설명한다.Hereinafter, each component is demonstrated in detail.
몰리브덴 산화물은 예를 들면 MoO2, MoO3, MoO4와 같이 몰리브덴에 산소가 결합된 형태를 가지는 성분이다. 이 중 본 실시예에서는 MoO2와 MoO3을 사용하고 있다.Molybdenum oxide is, for example, MoO 2 , MoO 3 , MoO 4 is a component having a form in which oxygen is bonded to molybdenum. Among them, in this embodiment, MoO 2 and MoO 3 are used.
또한 몰리브덴 산화물의 비율은 금속 산화물 소결체 전체에서 75중량% 이상을 차지한다. 이에 따라 박막으로 증착시 저반사 특성을 가진다.In addition, the proportion of molybdenum oxide occupies 75% by weight or more in the entire metal oxide sintered body. Accordingly, it has low reflection properties when deposited as a thin film.
한편 몰리브덴 산화물을 이루는 MoO2와 MoO3의 함량에 있어서 MoO2가 50~94.1중량%의 함량을 가지고 MoO3는 5.9~50중량%의 함량을 가진다. MoO2 함량이 50중량% 미만일 경우 상대적으로 MoO3의 양이 많아져서 소결밀도가 낮게 나오고 박막으로 증착 시 화학안정성 또한 좋지 않다. 한편 MoO2의 함량이 94.1중량%를 초과하는 경우, MoO2 함량이 많아짐에 따라 소결밀도는 높게 나올 수 있지만 타겟 강도가 낮아져서 타겟 내에 균열이 발생할 수 있다.On the other hand, in the content of MoO 2 and MoO 3 constituting the molybdenum oxide, MoO 2 has a content of 50 to 94.1 wt% and MoO 3 has a content of 5.9 to 50 wt%. When the MoO 2 content is less than 50% by weight, the amount of MoO 3 is relatively large, resulting in low sintering density and poor chemical stability when deposited as a thin film. On the other hand, when the content of MoO 2 exceeds 94.1% by weight, as the content of MoO 2 increases, the sintering density may be high, but the target strength may be lowered and thus cracks may occur in the target.
한편 첨가성분으로서 Nb2O5, Ta2O5, ZrO2, TiO2, SnO2, WO3 중 적어도 하나 이상의 조성이 10~25중량% 첨가된다. 이들 첨가성분에 의해 몰리브덴 산화물의 내화학성 및 내열성 특성을 높일 수 있다. 이하의 설명에서는 Nb2O5, Ta2O5, ZrO2, TiO2, SnO2, WO3 중 적어도 하나 이상의 성분을 기호화 하여 M으로 표시한다.Meanwhile, as an additive component, 10 to 25 wt% of at least one of Nb 2 O 5 , Ta 2 O 5 , ZrO 2 , TiO 2 , SnO 2 , and WO 3 is added. Chemical resistance and heat resistance characteristics of molybdenum oxide can be improved by these additive components. In the following description, at least one component of Nb 2 O 5 , Ta 2 O 5 , ZrO 2 , TiO 2 , SnO 2 , and WO 3 is symbolized and denoted as M.
상술한 바와 같은 조성으로 소결체와 타겟을 제조할 수 있으며 이하에서는 이에 대하여 설명한다.The sintered body and the target can be manufactured with the composition as described above, and this will be described below.
본 발명의 실시예에 따른 금속 산화물 타겟 제조 방법은, 재료분말을 혼합하는 제1단계, 혼합된 재료분말을 소결하는 제2단계, 재료분말이 소결된 소결체를 가공하는 제3단계 및 소결체를 백킹플레이트에 본딩하여 타겟을 완성하는 제4단계를 포함하여 이루어진다.Metal oxide target manufacturing method according to an embodiment of the present invention, the first step of mixing the material powder, the second step of sintering the mixed material powder, the third step of processing the sintered body in which the material powder is sintered and backing the sintered body and a fourth step of bonding to the plate to complete the target.
먼저 제1단계에서는, MoO2와 MoO3로 이루어진 몰리브덴 산화물 분말 75~90중량%에 Nb2O5, Ta2O5, ZrO2, TiO2, SnO2, WO3 분말 중 적어도 어느 하나(M)를 10~25중량% 첨가한 후 혼합한다. 이때 몰리브덴 산화물 분말에서 MoO2의 비율은 50~94.1중량% 내에서 선택할 수 있다.First, in the first step, at least one of Nb 2 O 5 , Ta 2 O 5 , ZrO 2 , TiO 2 , SnO 2 , WO 3 powder in 75 to 90% by weight of molybdenum oxide powder consisting of MoO 2 and MoO 3 (M ) is added at 10 to 25% by weight and then mixed. At this time, the ratio of MoO 2 in the molybdenum oxide powder can be selected within 50 to 94.1% by weight.
한편 이에 따른 각 분말의 (MoO2+MoO3+M)/(MoO2+MoO3) 중량% 비율은 1.11~1.33%가 된다. 여기에서 MoO2의 함량과 MoO3의 함량은 분자와 분모에서 각각 동일하다. 혼합된 분말은 지르코니아 볼을 이용하여 건식 볼밀 공정을 수행한다. 지르코니아 볼은 분말량의 1~3배로 칭량할 수 있고, 볼밀은 100~300rpm으로 7~9시간 동안 수행할 수 있다. 건식 볼밀을 완료한 후에 채질하여 분말 혼합을 완료할 수 있다.Meanwhile, the (MoO 2 +MoO 3 +M)/(MoO 2 +MoO 3 ) weight% ratio of each powder is 1.11 to 1.33%. Here, the content of MoO 2 and the content of MoO 3 are the same in the numerator and denominator, respectively. The mixed powder is subjected to a dry ball mill process using zirconia balls. Zirconia balls can be weighed 1 to 3 times the amount of powder, and the ball mill can be performed at 100 to 300 rpm for 7 to 9 hours. After the dry ball mill is completed, the powder mixing can be completed by sieving.
다음으로 제2단계에서는, 혼합된 분말을 소결하기 위하여 카본 몰드 내부와 하부 펀치에 카본 시트를 0.1~0.5mm로 감싸고 혼합된 분말을 100~300g을 장입할 수 있다. 분말을 장입한 후에 카본 시트를 덮고 상부 펀치를 설치한다.Next, in the second step, in order to sinter the mixed powder, the carbon sheet is wrapped in 0.1 to 0.5 mm inside the carbon mold and the lower punch, and 100 to 300 g of the mixed powder may be charged. After loading the powder, cover the carbon sheet and install the upper punch.
이와 같은 과정을 통해 소결 몰드의 준비가 완료되면 핫프레스에 소결 몰드를 장입하고 소결 과정을 수행할 수 있다. 소결시 승온속도는 2~10℃/분으로 하고, 최고 열처리 온도는 700~900℃에서 1~3시간으로 유지할 수 있다. 승온 및 유지 온도에서의 압력은 20~50MPa로 유지할 수 있다.When the preparation of the sintering mold is completed through this process, the sintering mold may be loaded into the hot press and the sintering process may be performed. During sintering, the temperature increase rate is 2~10℃/min, and the highest heat treatment temperature can be maintained at 700~900℃ for 1~3 hours. The pressure at the elevated temperature and the holding temperature can be maintained at 20 to 50 MPa.
다음으로 제3단계에서는 소결체를 꺼내고 가공한다. 구체적으로는 소결체를 꺼낸 후에 타겟 상하부에 카본 시트를 제거한 다음 타겟의 표면을 연마 가공한다. 카본 시트를 제거하기 위하여 상하부에 각 1mm 이상 가공을 할 수 있다.Next, in the third step, the sintered body is taken out and processed. Specifically, after taking out the sintered compact, the carbon sheet is removed from the upper and lower parts of the target, and then the surface of the target is polished. In order to remove the carbon sheet, it is possible to process 1mm or more in the upper and lower parts.
다음으로 제4단계에서는 가공된 소결체를 백킹플레이트에 본딩한다. 접착제로는 인듐을 사용할 수 있고, 본딩율은 95%이상이 되도록 함이 바람직하다.Next, in the fourth step, the processed sintered body is bonded to the backing plate. Indium can be used as the adhesive, and the bonding rate is preferably 95% or more.
이와 같은 과정을 통해 금속 산화물 타겟을 제조할 수 있다. 제조된 타겟의 타겟밀도는 96% 이상이고 특히 98% 이상이 되도록 함이 바람직하다.Through this process, a metal oxide target may be manufactured. The target density of the manufactured target is preferably 96% or more, and particularly 98% or more.
이와 같이 제조된 타겟을 이용하여 스퍼터링에 의해 금속 산화물 박막을 형성(증착)할 수 있다. 스퍼터링은 DC 스퍼터(Sputter)를 이용하여 수행할 수 있다.A metal oxide thin film may be formed (deposited) by sputtering using the thus prepared target. Sputtering may be performed using DC sputtering.
이러한 박막은 박막 트랜지스터의 게이트층, 소스층 및 드레인층으로 이용될 수 있다. 또한 이러한 박막 트랜지스터는 OLED TV, 모바일폰, 태블릿 등의 디스플레이 장치에 사용될 수 있다.Such a thin film may be used as a gate layer, a source layer, and a drain layer of a thin film transistor. In addition, such thin film transistors can be used in display devices such as OLED TVs, mobile phones, and tablets.
구체적인 예로서 본 발명의 실시예에 따른 금속 산화물 박막은 게이트층 하부의 저반사층으로 사용될 수 있다. 이와 같은 용도의 박막은 기판의 반사율을 낮추고 게이트 전극의 접착성을 향상시킨다.As a specific example, the metal oxide thin film according to an embodiment of the present invention may be used as a low reflection layer under the gate layer. The thin film for this purpose lowers the reflectance of the substrate and improves the adhesion of the gate electrode.
여기에서 기판은 유리기판, 금속기판, 플라스틱 기판, 플라스틱 필름 등 통상의 디스플레이 소자 공정에서 사용 가능한 다양한 기판 중 어느 하나일 수 있다. 구체적으로 기판은 OLED TV, 모바일폰, 태블릿에 있어서 투명하게 이루어진 전면패널일 수 있다. 한편 게이트 전극은 구리, 은 등의 일반적인 전극 물질로 형성될 수 있다.Here, the substrate may be any one of various substrates usable in a typical display device process, such as a glass substrate, a metal substrate, a plastic substrate, and a plastic film. Specifically, the substrate may be a transparent front panel in an OLED TV, mobile phone, or tablet. Meanwhile, the gate electrode may be formed of a general electrode material such as copper or silver.
박막 증착은 DC 스퍼터의 전력밀도(Power density)를 1.0~2.0w/cm2하고 아르곤 가스(Ar Gas) 분위기에서 상온에서 실시할 수 있다. 이때 금속 산화물 박막 두께는 300~500Å으로 할 수 있다. 또한 금속 산화물 박막 위에는 구리(Cu) 박막이 증착될 수 있다. 이때 구리 박막은 3000~6000Å의 두께로 증착될 수 있다.Thin film deposition may be performed at room temperature in an argon gas atmosphere with a power density of 1.0 to 2.0 w/cm 2 of DC sputtering. In this case, the thickness of the metal oxide thin film may be 300 to 500 Å. Also, a copper (Cu) thin film may be deposited on the metal oxide thin film. In this case, the copper thin film may be deposited to a thickness of 3000 to 6000 Å.
한편 반사율의 측정은 금속 산화물 박막이 형성된 기판면에서 측정할 수 있고 550nm 파장에 대한 광 반사율을 측정한다. 이때 광 반사율은 6% 이하일 수 있다. On the other hand, the reflectance can be measured on the surface of the substrate on which the metal oxide thin film is formed, and the light reflectance with respect to a wavelength of 550 nm is measured. In this case, the light reflectance may be 6% or less.
본 발명의 실시예에 따른 금속 산화물 박막은 내열성, 내화학성 특성이 우수하다. 내열성, 내화학성 평가는 아래와 같이 수행할 수 있다.The metal oxide thin film according to an embodiment of the present invention has excellent heat resistance and chemical resistance properties. Heat resistance and chemical resistance evaluation can be performed as follows.
내열성을 평가하기 위해 상술한 바와 같이 증착된 박막을 200~400℃의 분위기에서 30분 이상의 열처리를 하는 방법을 사용할 수 있다. 열처리는 일반적인 진공 열처리로에서 수행할 수 있다. 열처리 후 박막의 특성 변화를 관찰함으로써 내열성을 평가할 수 있다. 내열성 지표로는 예를 들면 반사율 차이가 내열성 측정을 하기 전 박막의 반사율의 7% 이하일 수 있다.In order to evaluate the heat resistance, a method of heat-treating the deposited thin film in an atmosphere of 200 to 400° C. for 30 minutes or longer as described above may be used. The heat treatment may be performed in a general vacuum heat treatment furnace. Heat resistance can be evaluated by observing the change in properties of the thin film after heat treatment. As the heat resistance index, for example, the difference in reflectance may be 7% or less of the reflectance of the thin film before measuring the heat resistance.
내화학성을 평가하기 위해 형성된 박막에 리소그라피 방법을 이용하여 미세 패턴을 형성하고 형성된 미세 패턴의 단면을 관찰하는 방법을 사용할 수 있다. 구체적으로 위와 같이 본 발명의 금속 산화물과 구리의 2개 층으로 형성된 박막에 포토레지스트(Positive PR Strip)를 1~2㎛ 도포한 후 베이킹(Backing)을 60~80℃에서 1시간 정도 실시하여 포토레지스터를 고형화한다. 이어서 마스크(PR Mask)를 정렬한 후 노광을 하여 일정 선폭의 패턴을 만든다. 이렇게 만든 패턴을 에칭(etching)하여 금속 산화물과 구리로 구성된 2층의 미세 패턴을 형성할 수 있다. 이와 같이 미세 패턴이 형성된 기판에서 포토레지스트를 제거한 후 미세 패턴에서 금속 산화물의 단면을 FIB-SEM으로 관찰할 수 있다. 이때 박막의 손상된 깊이는 2㎛ 미만이어야 하며, 특히 0.5㎛ 미만임이 바람직하다.In order to evaluate chemical resistance, a method of forming a micropattern using a lithography method on the formed thin film and observing a cross section of the formed micropattern may be used. Specifically, after applying 1~2㎛ photoresist (Positive PR Strip) to the thin film formed of two layers of metal oxide and copper of the present invention as described above, baking is performed at 60~80℃ for about 1 hour. solidify the register. Then, after aligning the PR Mask, exposure is performed to make a pattern of a certain line width. By etching the pattern made in this way, it is possible to form a two-layer fine pattern composed of metal oxide and copper. After the photoresist is removed from the substrate on which the micro-pattern is formed, the cross section of the metal oxide in the micro-pattern can be observed by FIB-SEM. In this case, the damaged depth of the thin film should be less than 2 μm, particularly preferably less than 0.5 μm.
다음으로 본 발명의 금속 산화물 소결체를 제조하는 실시예에 대하여 상세하게 설명한다. 하기 실시예는 본 발명의 한 형태를 예시하는 것에 불과할 뿐이며, 본 발명의 범위가 하기 실시예에 의해 제한되는 것은 아니다.Next, an embodiment of manufacturing the metal oxide sintered body of the present invention will be described in detail. The following examples are merely illustrative of one aspect of the present invention, and the scope of the present invention is not limited by the following examples.
[실시예 1] [Example 1]
MoO2/MoO3 중량% 비율이 6.5이고 (MoO2+MoO3+Nb2O5)/(MoO2+MoO3)의 중량% 비율이 1.333가 되도록 분말을 계량한다. 분말 계량 후에 1L 플라스틱 통에 넣고 알루미나 볼을 분말량의 3배수로 넣는다. 알루미나 볼은 3~10mm 볼을 사용한다. 분말과 볼의 투입이 완료되면 볼밀 기계에서 170~230rpm으로 8시간 동안 건식 혼합을 실시한다. 수득한 건식 분말을 핫프레스(Hot Press)로 가압 소결을 한다. 핫프레스 내부의 진공 조건은 10-1 torr로 하고, 승온속도는 3~7℃, 최고 온도는 750~800℃, 유지시간은 1~3시간으로 하여 소결을 진행한 후 노냉을 수행함으로써 소결체를 얻었다. 이렇게 얻어진 소결체의 소결 밀도는 98.6%이고, 비저항은 8.7x10-4 Ωcm로 측정되었다.The powder is weighed so that the MoO 2 /MoO 3 wt % ratio is 6.5 and the wt % ratio of (MoO 2 +MoO 3 +Nb 2 O 5 )/(MoO 2 +MoO 3 ) is 1.333. After weighing the powder, put it in a 1L plastic bucket and put the alumina ball 3 times the amount of powder. Alumina balls use 3~10mm balls. After the powder and balls are added, dry mixing is performed for 8 hours at 170-230 rpm in the ball mill. The obtained dry powder is pressure-sintered by a hot press. The vacuum condition inside the hot press is 10 -1 torr, the temperature increase rate is 3~7℃, the maximum temperature is 750~800℃, and the holding time is 1~3 hours. got it The sintered density of the thus obtained sintered body was 98.6%, and the specific resistance was measured to be 8.7x10 -4 Ωcm.
[실시예 2] [Example 2]
MoO2/MoO3 중량% 비율이 16이고 (MoO2+MoO3+Nb2O5)/(MoO2+MoO3)의 중량% 비율이 1.176이 되도록 분말을 계량한다. 분말 계량 후에 1L 플라스틱 통에 넣고 알루미나 볼을 분말량의 3배수로 넣는다. 알루미나 볼은 3~10mm 볼을 사용한다. 분말과 볼의 투입이 완료되면 볼밀 기계에서 170~230rpm에서 8시간 동안 건식 혼합을 실시한다. 수득한 건식 분말을 핫프레스(Hot Press)로 가압 소결을 한다. 핫프레스 내부 진공 조건은 10-1 torr로 하고, 승온속도는 3~7℃, 최고 온도는 750~800℃, 유지시간은 1~3시간으로 하여 소결을 진행한 후 노냉을 수행함으로써 소결체를 얻었다. 이렇게 얻어진 소결체의 소결 밀도가 98.3%이고, 비저항은 2.9x10-4 Ωcm로 측정되었다.The powder is weighed so that the MoO 2 /MoO 3 wt % ratio is 16 and the wt % ratio of (MoO 2 +MoO 3 +Nb 2 O 5 )/(MoO 2 +MoO 3 ) is 1.176. After weighing the powder, put it in a 1L plastic bucket and put the alumina ball 3 times the amount of powder. Alumina balls use 3~10mm balls. When the powder and balls are added, dry mixing is performed for 8 hours at 170-230 rpm in a ball mill machine. The obtained dry powder is pressure-sintered by a hot press. The vacuum condition inside the hot press was 10 -1 torr, the temperature increase rate was 3 to 7 ° C, the maximum temperature was 750 to 800 ° C, and the holding time was 1 to 3 hours. . The sintered compact thus obtained had a sintered density of 98.3% and a specific resistance of 2.9x10 -4 Ωcm.
[실시예 3] [Example 3]
MoO2/MoO3 중량% 비율이 1이고 (MoO2+MoO3+Nb2O5)/(MoO2+MoO3)의 중량% 비율이 1.174가 되도록 분말을 계량을 한다. 분말 계량 후에 1L 플라스틱 통에 넣고 알루미나 볼을 분말량의 3배수로 넣는다. 알루미나 볼은 3~10mm 볼을 사용한다. 분말과 볼의 투입이 완료되면 볼밀 기계에서 170~230rpm에서 8시간 동안 건식 혼합을 실시한다. 수득한 건식 분말을 핫프레스(Hot Press)로 가압 소결을 한다. 핫프레스 내부 진공 조건은 10-1 torr로 하고, 승온속도는 3~7℃, 최고 온도는 750~800℃, 유지시간은 1~3시간으로 하여 소결을 진행한 후 노냉을 수행함으로써 소결체를 얻었다. 이렇게 얻어진 소결체의 소결 밀도가 98.0%이고, 비저항은 4.3x10-4 Ωcm로 측정되었다. The powder is weighed so that the weight% ratio of MoO 2 /MoO 3 is 1 and the weight % ratio of (MoO 2 +MoO 3 +Nb 2 O 5 )/(MoO 2 +MoO 3 ) is 1.174. After weighing the powder, put it in a 1L plastic bucket and put the alumina ball 3 times the amount of powder. Alumina balls use 3~10mm balls. When the powder and balls are added, dry mixing is performed for 8 hours at 170-230 rpm in a ball mill machine. The obtained dry powder is pressure-sintered by a hot press. The vacuum condition inside the hot press was 10 -1 torr, the temperature increase rate was 3 to 7 ° C, the maximum temperature was 750 to 800 ° C, and the holding time was 1 to 3 hours. . The sintered compact thus obtained had a sintered density of 98.0% and a specific resistance of 4.3x10 -4 Ωcm.
[실시예4] [Example 4]
MoO2/MoO3 중량% 비율이 6.64이고 (MoO2+MoO3+Nb2O5)/(MoO2+MoO3)의 중량% 비율이 1.19가 되도록 분말을 계량한다. 분말 계량 후에 1L 플라스틱 통에 넣고 알루미나 볼을 분말량의 3배수로 넣는다. 알루미나 볼은 3~10mm 볼을 사용한다. 분말과 볼의 투입이 완료되면 볼밀 기계에서 170~230rpm에서 8시간 동안 건식 혼합을 실시한다. 수득한 건식 분말을 핫프레스(Hot Press)로 가압 소결을 한다. 핫프레스 내부 진공 조건은 10-1 torr로 하고, 승온속도는 3~7℃, 최고 온도는 750~800℃, 유지시간은 1~3시간으로 하여 소결을 진행한 후 노냉을 수행함으로써 소결체를 얻었다. 이렇게 얻어진 소결체는 소결 밀도가 98.0%이고, 비저항은 1.4x10-4 Ωcm로 측정되었다. The powder is weighed so that the MoO 2 /MoO 3 wt % ratio is 6.64 and the wt % ratio of (MoO 2 +MoO 3 +Nb 2 O 5 )/(MoO 2 +MoO 3 ) is 1.19. After weighing the powder, put it in a 1L plastic bucket and put the alumina ball 3 times the amount of powder. Alumina balls use 3~10mm balls. When the powder and balls are added, dry mixing is performed for 8 hours at 170-230 rpm in a ball mill machine. The obtained dry powder is pressure-sintered by a hot press. The vacuum condition inside the hot press was 10 -1 torr, the temperature increase rate was 3 to 7 ° C, the maximum temperature was 750 to 800 ° C, and the holding time was 1 to 3 hours. . The sintered compact thus obtained had a sintered density of 98.0% and a specific resistance of 1.4x10 -4 Ωcm.
[실시예 5] [Example 5]
MoO2/MoO3 중량% 비율이 6.72이고 (MoO2+MoO3+Ta2O5)/(MoO2+MoO3)의 중량% 비율이 1.176이 되도록 분말을 계량한다. 분말 계량 후에 1L 플라스틱 통에 넣고 알루미나 볼을 분말량의 3배수로 넣는다. 알루미나 볼은 3~10mm 볼을 사용한다. 분말과 볼의 투입이 완료되면 볼밀 기계에서 170~230rpm에서 8시간 동안 건식 혼합을 실시 한다. 수득한 건식 분말을 핫프레스(Hot Press)로 가압 소결을 한다. 핫프레스 내부 진공 조건은 10-1 torr로 하고, 승온속도는 3~7℃, 최고 온도는 750~800℃, 유지시간은 1~3시간으로 하여 소결을 진행한 후 노냉을 수행함으로써 소결체를 얻었다. 이렇게 얻어진 소결체는 소결 밀도가 96.0%이고, 비저항은 5.8x10-4 Ωcm로 측정되었다.The powder is weighed so that the MoO 2 /MoO 3 wt % ratio is 6.72 and the wt % ratio of (MoO 2 +MoO 3 +Ta 2 O 5 )/(MoO 2 +MoO 3 ) is 1.176. After weighing the powder, put it in a 1L plastic bucket and put the alumina ball 3 times the amount of powder. Alumina balls use 3~10mm balls. When the powder and balls are added, dry mixing is performed for 8 hours at 170-230 rpm in a ball mill machine. The obtained dry powder is pressure-sintered by a hot press. The vacuum condition inside the hot press was 10 -1 torr, the temperature increase rate was 3 to 7 ° C, the maximum temperature was 750 to 800 ° C, and the holding time was 1 to 3 hours. . The sintered compact thus obtained had a sintered density of 96.0% and a specific resistance of 5.8x10 -4 Ωcm.
[비교예] [Comparative example]
MoO2/MoO3 중량% 비율이 6.7이고 첨가되는 성분이 없어 (MoO2+MoO3)/(MoO2+MoO3)의 중량% 비율이 1이 되도록 분말을 계량한다. 분말 계량 후에 1L 플라스틱 통에 넣고 알루미나 볼을 분말량의 3배수로 넣는다. 알루미나 볼은 3~10mm 볼을 사용한다. 분말과 볼의 투입이 완료되면 볼밀 기계에서 170~230rpm에서 8시간 동안 건식 혼합을 실시한다. 수득한 건식 분말을 핫프레스(Hot Press)로 가압 소결을 한다. 핫프레스 내부의 진공 조건은 10-1 torr로 하고, 승온속도는 3~7℃, 최고 온도는 750~800℃, 유지시간은 1~3시간으로 하여 소결을 진행한 후 노냉을 수행함으로써 소결체를 얻었다. 이렇게 얻어진 소결체는 소결 밀도가 96.1%이고, 비저항은 5.8x10-4 Ωcm로 측정되었다. No MoO 2 / MoO 3 ingredients% by weight proportion is 6.7 and added (MoO 2 + MoO 3) / (MoO 2 + MoO 3) and the metering of the powder to be 1 weight% ratio. After weighing the powder, put it in a 1L plastic bucket and put the alumina ball 3 times the amount of powder. Alumina balls use 3~10mm balls. When the powder and balls are added, dry mixing is performed for 8 hours at 170-230 rpm in a ball mill machine. The obtained dry powder is pressure-sintered by a hot press. The vacuum condition inside the hot press is 10 -1 torr, the temperature increase rate is 3~7℃, the maximum temperature is 750~800℃, and the holding time is 1~3 hours. got it The sintered compact thus obtained had a sintered density of 96.1% and a specific resistance of 5.8x10 -4 Ωcm.
이에 따른 결과를 표 1에 정리하였다.The results are summarized in Table 1.
실시예와 비교예 모두에서 기준치에 해당하는 비저항 1x10-2 Ωcm이하, 타겟밀도는 95% 이상을 만족하였다. 다만, 타켓밀도의 측면에서 실시예 1 내지 실시예 4가 특히 우수함을 확인하였다. 이에 따라 타겟밀도가 높은 실시예 1 내지 실시예 4의 경우 박막 증착 시 더 안정적으로 플라즈마 형성이 가능하게 된다.In both Examples and Comparative Examples, the specific resistance corresponding to the reference value of 1x10 -2 Ωcm or less, and the target density satisfies 95% or more. However, it was confirmed that Examples 1 to 4 were particularly excellent in terms of target density. Accordingly, in the case of Examples 1 to 4 having a high target density, plasma formation is more stably possible during thin film deposition.
상술한 실시예와 비교예의 금속 산화물 소결체를 타겟 재료로 하여 박막을 형성한 후 박막의 내열성과 내화학성을 평가하였다.After forming a thin film using the metal oxide sintered body of the above-described Examples and Comparative Examples as a target material, heat resistance and chemical resistance of the thin film were evaluated.
박막은 상술한 실시예와 비교예의 소결체를 포함하는 타겟을 DC스퍼터를 이용하여 전력밀도(Power density)는 0.5~3.6w/cm2로 하고 아르곤 가스 분위기에서 투명한 글래스 기판 위에 증착하여 형성하였다. 이때 박막두께는 350Å이었다.The thin film was formed by depositing a target including the sintered body of the above-described Examples and Comparative Examples on a transparent glass substrate in an argon gas atmosphere with a power density of 0.5 to 3.6 w/cm 2 using DC sputtering. At this time, the thin film thickness was 350 Å.
추가로 이러한 박막 위에 전극을 형성하였다. 전극은 구리 타겟을 DC스퍼터를 이용하여 전력밀도(Power density)는 0.5~3.6w/cm2로 하고 아르곤 가스 분위기에서 형성하였으며, 박막두께는 6000Å으로 하였다.Further, an electrode was formed on this thin film. The electrode was formed in an argon gas atmosphere with a power density of 0.5 to 3.6 w/cm 2 using a copper target using DC sputtering, and a thin film thickness of 6000 Å.
이러한 상태에서 글래스 기판 면에서 박막의 반사율을 측정한 후 진공열처리로에서 350℃의 온도로 30분 이상 열처리한 후 반사율을 다시 측정하고 양 반사율을 비교하였다. 표 2에 이에 따른 결과를 제시하였다.In this state, after measuring the reflectance of the thin film on the surface of the glass substrate, heat treatment at a temperature of 350° C. in a vacuum heat treatment furnace for 30 minutes or more, the reflectance was measured again, and both reflectances were compared. Table 2 shows the results.
실시예와 비교예 모두 표 2와 같이 최초 반사율은 양호하였고 열처리 후의 반사율의 변화도 크지 않음을 확인하였다. 다만, 실시예들의 경우 최초 반사율로부터 7% 이내의 반사율 변화를 보임으로써 비교예에 비해 내열성이 더 우수함을 확인하였다.In both Examples and Comparative Examples, as shown in Table 2, the initial reflectance was good, and it was confirmed that the change in reflectance after heat treatment was not large. However, in the case of the Examples, it was confirmed that the heat resistance was superior to that of the Comparative Example by showing a change in reflectance within 7% from the initial reflectance.
화학안정성을 확인하기 위하여 증착이 완료된 박막(실시예 또는 비교예로 형성된 박막 위에 구리 박막이 형성된 것)에 포토레지스트를 도포한 후 마스크를 정렬하고 노광을 하였다. 이어서 박막의 에칭을 위하여 과산화수소(H2O2) 베이스의 에칭액을 사용하였다. 이러한 과정을 통해 미세 패턴을 형성하고 포토레지스트 세정액으로 잔여 포토리지스트를 제거한 다음 미세 패턴의 손상 여부를 확인하였다.In order to check chemical stability, a photoresist was applied to the deposited thin film (the copper thin film formed on the thin film formed in the Example or Comparative Example), and then the mask was aligned and exposed. Then, for etching the thin film, an etchant based on hydrogen peroxide (H 2 O 2 ) was used. Through this process, a fine pattern was formed, the remaining photoresist was removed with a photoresist cleaning solution, and then, it was checked whether the fine pattern was damaged.
실시예 1에 따른 금속 산화물과 구리로 구성된 2층의 미세 패턴은 에칭 및 세정 후에 손상이 없었으며, 도 1과 같은 단면을 얻을 수 있었다. 실시예와 비교예에 따른 미세 패턴의 박막 손상 깊이를 표 2에 표시하였다.The two-layer fine pattern composed of metal oxide and copper according to Example 1 was not damaged after etching and cleaning, and a cross-section as shown in FIG. 1 was obtained. The depth of damage to the thin film of the fine pattern according to Examples and Comparative Examples is shown in Table 2.
반사율(열처리전)Metal oxide/copper thin film
Reflectance (before heat treatment)
반사율(열처리후)Metal oxide/copper thin film
Reflectance (after heat treatment)
표 2를 참조하면 실시예 1과 별도로 실시예 2 내지 실시예 4의 경우도 박막의 손상된 깊이가 0.5㎛ 미만으로서 양호한 내화학성을 가짐을 확인하였다. 실시예 5의 경우 박막의 손상된 깊이가 1.41㎛로 다소 커졌는데 실시예 5인 Ta2O5의 경우 실시예 4와 같이 TiO2와 혼합하여 사용하는 것이 더 바람직하다는 것을 확인하였다. 한편 비교예의 경우 내화학성의 측면에서 박막의 손상된 깊이가 3.29㎛로 상당히 큰 편이었다. 이를 도 2에 도시하였다.Referring to Table 2, apart from Example 1, in Examples 2 to 4, the damaged depth of the thin film was less than 0.5 μm, and it was confirmed that the thin film had good chemical resistance. In the case of Example 5, the damaged depth of the thin film was slightly increased to 1.41 μm, but it was confirmed that Ta 2 O 5 of Example 5 was more preferably mixed with TiO 2 as in Example 4. On the other hand, in the case of the comparative example, the damage depth of the thin film in terms of chemical resistance was 3.29 μm, which was quite large. This is shown in FIG. 2 .
이와 같이 전체적인 특성으로 볼 때 소결밀도 98% 이상이고 박막 손상 깊이가 0.2㎛ 미만인 실시예 1~실시예 3의 경우가 특히 우수한 특성을 가지는 것으로 확인되었다. 한편 유사한 특성을 가진 ZrO2, SnO2, WO3 의 경우도 비교예에 비해 우수한 내열성, 내화학성의 특징을 갖을 것으로 예상된다.In view of the overall characteristics, it was confirmed that Examples 1 to 3 having a sintered density of 98% or more and a thin film damage depth of less than 0.2 μm had particularly excellent properties. Meanwhile, ZrO 2 , SnO 2 , and WO 3 having similar properties are also expected to have superior heat resistance and chemical resistance compared to Comparative Examples.
앞서 설명한 본 발명의 상세한 설명에서는 본 발명의 바람직한 실시예를 참조하여 설명하였지만, 해당 기술분야의 숙련된 당업자 또는 해당 기술분야에 통상의 지식을 갖는 자라면 후술될 특허청구범위에 기재된 본 발명의 사상 및 기술 영역으로부터 벗어나지 않는 범위 내에서 본 발명을 다양하게 수정 및 변경시킬 수 있음을 이해할 수 있을 것이다.Although the detailed description of the present invention described above has been described with reference to a preferred embodiment of the present invention, those skilled in the art or those having ordinary knowledge in the art will have the spirit of the present invention described in the claims to be described later. And it will be understood that various modifications and variations of the present invention can be made without departing from the technical scope.
Claims (5)
Nb2O5, Ta2O5, ZrO2, TiO2, SnO2, WO3 중 적어도 1 개 이상의 성분 10~25중량%가 혼합되어 이루어지고,
상기 몰리브덴 산화물에서 MoO2의 함량은 몰리브덴 산화물 중 50~94.1중량%이고, 550nm 파장에 대한 반사율이 6% 이하이고,
350℃의 온도에서 30분 이상의 열처리 후에 550nm 파장에 대한 광 반사율의 차이가 7% 이하인 것을 특징으로 하는 박막.75 to 90% by weight of molybdenum oxide containing MoO 2 and MoO 3 and
Nb 2 O 5 , Ta 2 O 5 , ZrO 2 , TiO 2 , SnO 2 , and 10-25 wt% of at least one component of WO 3 is mixed,
The content of MoO 2 in the molybdenum oxide is 50 to 94.1% by weight of the molybdenum oxide, and the reflectance for a wavelength of 550nm is 6% or less,
A thin film, characterized in that the difference in light reflectance for a wavelength of 550 nm is 7% or less after heat treatment at a temperature of 350° C. for 30 minutes or more.
박막 상에 리소그라피 공정을 수행하였을 때 박막의 손상 깊이가 0.5㎛ 미만인 것을 특징으로 하는 박막.According to claim 1,
A thin film, characterized in that when the lithography process is performed on the thin film, the damage depth of the thin film is less than 0.5 μm.
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| PCT/KR2020/018386 WO2022124460A1 (en) | 2020-12-10 | 2020-12-15 | Metal oxide sintered body containing molybdenum oxide as main component and sputtering target comprising same |
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