KR102300989B1 - Output power measurement method of high power amplifier module - Google Patents

Abstract

A high output power amplifier according to an embodiment of the present disclosure includes a high output power amplifier comprising: a power supply unit supplying power to a control unit; the control unit directly connected to the signal generator and the high output power amplification module, the control unit controlling the operation of the high output power amplification module; and an analysis unit for checking the output power of the high output power amplification module.

Description

OUTPUT POWER MEASUREMENT METHOD OF HIGH POWER AMPLIFIER MODULE

The present disclosure relates to a high output power amplifier and a method for controlling the same.

The performance of power amplifiers is constantly evolving with the development of new technologies. In the past, high-output power amplifiers have been developed from vacuum tube-type power amplifiers (Magnetron, Klyst-ron, etc.). However, since the vacuum tube type power amplifier requires a high failure rate and a high operating voltage, reliability and efficiency are degraded.

The present disclosure provides a high-output and high-efficiency high-output power amplifier and a control method therefor.

The present disclosure provides an apparatus and method having excellent linearity and reducing distortion.

A high output power amplifier according to an embodiment of the present disclosure includes a high output power amplifier comprising: a power supply unit supplying power to a control unit; the control unit directly connected to the signal generator and the high output power amplification module, the control unit controlling the operation of the high output power amplification module; and an analysis unit for checking the output power of the high output power amplification module.

A high output power amplifier according to another embodiment of the present disclosure is a high output power amplifier, comprising: a power supply unit for supplying power to a control unit; the control unit directly connected to the signal generator and the high output power amplification module, the control unit controlling the operation of the high output power amplification module; and an analysis unit for checking the output power of the high output power amplification module, wherein the high output power amplification module further includes a low pass filter (LPF) for reducing harmonic components.

A high-output power amplifier according to another embodiment of the present disclosure is a high-output power amplifier, comprising: a power supply unit for supplying power to a control unit; the control unit directly connected to the signal generator and the high output power amplification module, the control unit controlling the operation of the high output power amplification module; and an analysis unit for confirming the output power of the high output power amplification module, wherein the high output power amplification module further includes a low pass filter (LPF) that reduces harmonic components, and the high output power amplification module includes an X-band for a rater based on

A method of controlling a high output power amplifier according to an embodiment of the present disclosure includes the steps of: receiving an input signal and transferring the input signal to a high output power amplification module; controlling the operation of the high output power amplification module; and checking the output power of the high output power amplification module.

According to another embodiment of the present disclosure, there is provided a method of controlling a high output power amplifier, comprising: receiving an input signal and transmitting an input signal to a high output power amplification module; controlling the operation of the high output power amplification module; and checking the output power of the high output power amplification module, wherein the high output power amplification module further includes a low pass filter (LPF) for reducing harmonic components.

A method of controlling a high output power amplifier according to another embodiment of the present disclosure includes the steps of: receiving an input signal and transmitting the received input signal to a high output power amplification module; controlling the operation of the high output power amplification module; and checking the output power of the high output power amplification module, wherein the high output power amplification module further includes a low pass filter (LPF) that reduces harmonic components, and the high output power amplification module includes a radar X-band based on

The present disclosure may provide high output and high efficiency by using a GaN device.

The present disclosure can improve linearity and reduce distortion.

1 is a block diagram of an X-band power amplification module (PAM) and a diagram illustrating a PAM budget simulation according to an embodiment of the present disclosure;
2 is a graph showing an input/output power simulation result according to an embodiment of the present disclosure;
3 is a view showing a shape of a PAM according to an embodiment of the present disclosure;
4 is a block diagram of a PAM according to an embodiment of the present disclosure;
5 is a graph showing PAM Isolation according to an embodiment of the present disclosure;
6 is a graph showing output power of a PAM according to an embodiment of the present disclosure;
7 is a graph showing the spurious wave of the PAM according to an embodiment of the present disclosure;
8 is a graph showing harmonics of a PAM according to an embodiment of the present disclosure;
9 is a graph showing a standing wave ratio of a PAM according to an embodiment of the present disclosure; and
10 is a configuration diagram of a test measurement according to an embodiment of the present disclosure;

Hereinafter, various embodiments of the present disclosure are described with reference to the accompanying drawings. However, it is not intended to limit the technology described in the present disclosure to specific embodiments, and it should be understood that the present disclosure includes various modifications, equivalents, and/or alternatives of the embodiments of the present disclosure. . In connection with the description of the drawings, like reference numerals may be used for like components.

In the present disclosure, expressions such as “have”, “may have”, “include”, or “may include” indicate the presence of a corresponding characteristic (eg, a numerical value, function, operation, or component such as a part). and does not exclude the presence of additional features.

In the present disclosure, expressions such as “A or B”, “at least one of A and/and B”, or “one or more of A or/and B” may include all possible combinations of the items listed together. . For example, "A or B", "at least one of A and B", or "at least one of A or B" means (1) includes at least one A, (2) includes at least one B; Or (3) it may refer to all cases including both at least one A and at least one B.

Expressions such as "first", "second", "first", or "second" used in the present disclosure may modify various elements, regardless of order and/or importance, and may modify one element to another. It is used only to distinguish it from the components, and does not limit the components. For example, the first user equipment and the second user equipment may represent different user equipment regardless of order or importance. For example, without departing from the scope of the rights described in the present disclosure, a first component may be referred to as a second component, and similarly, the second component may also be renamed as a first component.

A component (eg, a first component) is "coupled with/to (operatively or communicatively)" to another component (eg, a second component); When referring to "connected to", it should be understood that any of the above-described components may be directly connected to the above-described other component or may be connected through another component (eg, a third component). On the other hand, when it is said that a component (eg, a first component) is "directly connected" or "directly connected" to another component (eg, a second component), a component different from a component It may be understood that no other component (eg, a third component) exists between the elements.

The expression “configured to (or configured to)” as used in this disclosure is, depending on the context, for example, “suitable for”, “having the capacity to” It can be used interchangeably with "," "designed to", "adapted to", "made to", or "capable of". The term “configured (or configured to)” may not necessarily mean only “specifically designed to” in hardware. Instead, in some circumstances, the expression “a device configured to” may mean that the device is “capable of” with other devices or parts. For example, the phrase “a processor configured (or configured to perform) A, B, and C” refers to a dedicated processor (eg, an embedded processor) for performing the operations, or by executing one or more software programs stored in a memory device. , may mean a generic-purpose processor (eg, a CPU or an application processor (AP)) capable of performing corresponding operations.

Terms used in the present disclosure are used only to describe specific embodiments, and may not be intended to limit the scope of other embodiments. The singular expression may include the plural expression unless the context clearly dictates otherwise. Terms used herein, including technical or scientific terms, may have the same meaning as commonly understood by one of ordinary skill in the art described in the present disclosure. Among the terms used in the present disclosure, terms defined in a general dictionary may be interpreted with the same or similar meaning as the meaning in the context of the related art, and unless explicitly defined in the present disclosure, ideal or excessively formal meanings is not interpreted as In some cases, even terms defined in the present disclosure cannot be construed to exclude embodiments of the present disclosure.

High-power amplification apparatus according to various embodiments of the present disclosure, for example, a smart phone (smartphone), a tablet PC (tablet personal computer), a mobile phone (mobile phone), a video phone, an e-book reader (e-book reader) , desktop personal computer, laptop personal computer, netbook computer, workstation, server, personal digital assistant (PDA), portable multimedia player (PMP), MP3 player, mobile It may be included in at least one of a medical device, a camera, and a wearable device.

The performance of power amplifiers is constantly evolving with the development of new technologies. The power amplification module, which started in the form of a vacuum tube in the past, has developed into the form of a highly integrated MMIC (Monolithic Microwave Integrated Circuit) in the modern era. And, recently, methods for increasing the efficiency of a power amplifier using a GaN (Gallium Nitride) device are being studied. GaN can be operated at high voltage due to its wide energy gap of 3.4 eV, high current density and power density can be obtained due to high carrier concentration using polarized charge, and high-speed operation is possible from high electron mobility and saturation speed, It is suitable as a material for high-power, high-efficiency, and small-sized power amplifier devices.

In particular, the radar uses the X-band a lot, and the power amplification module used in the embodiment of the present disclosure requires a high output. Since the radar output closely affects the radar detection distance, an amplification module having high output performance is required to detect a target at a greater distance. In an embodiment of the present disclosure, a high-output power amplification module used in the X-band will be described. It is assumed that the maximum power in the band is 25W output, the spurious is about -65dBc, the 2nd harmonic is -50dBc, and the 3rd harmonic is -70dBc.

The X-band assumes that the frequency band is about 8 to 12 GHz.

With the recent development of the defense industry, difficult technologies are being developed to strengthen national defense capabilities. Among them, radar is a device for detecting and locating a target. The farther the radar's detection distance, the more important it is to detect and fire the enemy fighter first. The principle of radar is to radiate an RF (Radio Frequency) signal toward a target, and analyze the signal that hits the target and returns to find out the position and speed information of the object. That is, a radar with a higher power can identify a farther target. High-power amplifiers to have high output have been developed from the past vacuum tube power amplifiers (magnetron, klystron, etc.). The vacuum tube type power amplifier is disadvantageous in reliability and efficiency because it requires a high failure rate and a high operating voltage. An improved one is a power amplifier using a semiconductor device. It has a great advantage in that it can be designed and manufactured in a relatively low power supply voltage and small area. In addition, the semiconductor device has better linearity than the vacuum tube power amplifier, and has less distortion due to harmonic components and mutual variation related thereto, so that it can be designed effectively. Among semiconductor devices, gallium nitride (GaN) has a higher band gap than silicon devices, and thus can have high efficiency and high output.

In the embodiment of the present disclosure, an amplifier is configured using a GaN device. A total of three stages of amplifiers are used, and in order to reduce nonlinearity from the final output, a low pass filter (LPF) is used to reduce harmonic components.

In addition, by producing a control board for controlling the amplification module of the embodiment of the present disclosure, PRI (Pulse Repetition Interval) and PW (Pulse Width) are generated through RS-232 communication, and BIT (Built in Test) information of the module is given. perform the receiving role. In the design process, it can be designed in the form of a module including several functions to satisfy the target specification. An example of the above goals may be shown in Table 1 below.

Although amplifiers of several bands have been developed, in an embodiment of the present disclosure, a radar X-band high-power amplification module (PAM) will be described. Through various verifications, the parts to be reflected in the design were derived. In the embodiment of the present disclosure, the entire simulation to be applied to the X-band PAM for radar was performed, production and testing were performed accordingly, and finally the results were analyzed and final considerations were presented.

1 is a block diagram of an X-band power amplification module (PAM) and a diagram illustrating a PAM budget simulation according to an embodiment of the present disclosure. Based on the simulation result for satisfying the target specification, the required power amplification output can be calculated as about 44 dBm based on Equation 1 below.

In <Equation 1>, P _t is the transmission power, P _r is the carrier power, G _t is the antenna transmission gain, G _r is the antenna carrier gain, σ is the RCS (radar cross section), and R is the target is the street Here, the RCS indicates the amount of reflection at the moment when the radar detects a target using electromagnetic waves, in units of a prescribed planar area. The RCS changes according to the shape, size, material, observation direction, and radar operating frequency of the target, and affects the strength of the radar reception signal and the detection probability. Therefore, if the radar operates using the optimum frequency at which the RCS value of each target is maximized, the radar detection probability of the target can be increased.

The high output power amplifier according to an embodiment of the present disclosure is applied to a T/R (Transmit/Receive) module that generates transmit power output from the final antenna channel. To this end, a value obtained by dividing the number of antenna channels by 44 dBm, which is the output of the high output power amplifier according to an embodiment of the present disclosure, enters the input of the antenna T/R module and affects the final Pt (transmission power). In order to satisfy the output of the high output power amplifier of 44dBm, all 3 stages can be used. The first two stages can use a complementary metal-oxide-semiconductor (CMOS) amplifier, and the last amplifier can use a high-power amplifier using a GaN device. The transmitting terminal and the receiving terminal were located in opposite directions to ensure physical isolation. In order to reduce the frequency component outside the band used by PAM, it was removed using a filter. If a coupler is added for input/output monitoring of the circuit, the output loss can be expected to be about 0.5dB. It is configured to operate in the power saturation region through circuit simulation, and after sweep, the input/output value is checked, the final output power value and the output use range according to the input can be checked, and the result can be shown in FIG. 2 . 2 is a graph illustrating an input/output power simulation result according to an embodiment of the present disclosure.

The input value of P1dB is confirmed to be about 8dBm, and when the input is swept from -20dBm to 15dBm, the output value is about 44dBm output. 3 shows a shape of a PAM according to an embodiment of the present disclosure, and FIG. 4 is a block diagram of a PAM according to an embodiment of the present disclosure.

The PAM circuit block includes a coupler 1 401 , an AMP 1 403 , an attenuator 405 , an AMP 2 407 , a high-power amplifier (HPA) 409 , a BPF 411 , and a coupler 2 ( 413 ). includes

The coupler 1 401 is used for monitoring the signal level of the transmission input, and by checking the RF signal input from the outside and the state of the power amplifier, it is possible to determine whether the module is faulty by the faulty BIT.

The PAM circuit block uses three amplifiers such as AMP 1 (403), AMP 2 (407), and HPA (409). Here, the AMP 1 403 and the AMP 2 407 may use, for example, a CMOS amplifier, and the HPA 409 may use a high-power amplifier using a GaN device.

The BPF 411 performs filtering to reduce nonlinearity and reduce harmonic components.

The coupler 2 413 may be used for monitoring the output of the HPA 409 . For example, the coupler 2 413 may determine whether there is a failure by generating a failure BIT when the transmission output is lowered due to a failure of the HPA 409 .

The circuit was implemented and measured in the same way as in the simulation block diagram. 5 to 9 show examples of measured waveforms.

5 is a graph showing PAM Isolation according to an embodiment of the present disclosure.

6 is a graph illustrating output power of a PAM according to an embodiment of the present disclosure.

7 is a graph illustrating an spurious wave of a PAM according to an embodiment of the present disclosure.

8 is a graph illustrating harmonics of a PAM according to an embodiment of the present disclosure.

9 is a graph illustrating a standing wave ratio of a PAM according to an embodiment of the present disclosure.

The waveforms measured in FIGS. 5 to 9 may be represented as in <Table 2>.

It can be seen that most of the results are similar to the results expected in the simulation stage.

10 is a test measurement configuration diagram according to an embodiment of the present disclosure.

The signal generator 1001 may generate an X-band signal according to an embodiment of the present disclosure.

The power supply unit 1003 may supply power to the PAM port control unit 1005 .

The PAM port control unit 1005 may control the PAM through a user interface computer, for example, a graphical user interface (GUI) of the notebook 1011 after manufacturing a jig including a cooling plate for measuring the PAM. The input of the PAM applies 8dBm of input power through the signal generator 1001 to a wide band (100kHz to 40GHz) that can generate an X-band signal, and the output is checked in the network and spectrum analyzer 1009. can When checking the output, VSWR (Voltage Standing Wave Ratio) and test environment cable loss may use, for example, a network analysis unit, and output, harmonics, spurious waves, and flatness may use, for example, a spectrum analysis unit. When the output is checked, since the output power of the PAM is high, it can be applied to the measuring device through the attenuator 1007 in order to protect the measuring device. Also, the network and spectrum analyzer 1009 may check the output with reference to the result values of FIGS. 5 to 9 .

The signal generator 1001 may receive an input signal or generate itself and transmit it to the PAM port controller 1005 . The PAM port controller 1005 may control the operation of the high output power amplification module (PAM). The operation of the high output power amplification module (PAM) will be referred to with reference to FIG. 4 . The network and spectrum analyzer 1009 may check the output power of the high output power amplification module.

The high output power amplification module may further include an LPF that reduces harmonic components. The high output power amplification module may include two complementary metal-oxide-semiconductor (CMOS) amplifiers and one high output amplifier using a semiconductor device (GaN).

It can be seen that most of the results are similar to the simulation results. Although there is a loss of line during production, the output can be measured almost identically because it is reflected in the budget simulation stage. An output droop is secured by inserting a capacitor to maintain the output during the operation period, and an spurious wave is generated by the used power switching circuit, but it can be measured within the target performance. This part can secure more value by tuning the circuit. It is designed to operate in the saturation region to obtain a stable output in response to changes in input. Harmonic performance was secured by using the 2nd rejection ratio -30dBc filter of the X-band at the output. As shown in <Table 3> below, the target performance and comparison with similar products can be expressed.

It is advantageous for electrical characteristics that circuits are designed to be symmetrical with respect to input/output. In addition, line loss must be considered when the output of the amplification module enters the input of the next stage. From an electrical point of view, the active elements used inside the PAM must be used in the linear section. Since harmonic components appear high when used in a saturated region, a clear selection of target performance is required during design. When performing a performance test, it should be possible to check the switch control and operation through the notebook GUI (Graphical User Interface). If it is impossible to check through the GUI, it may be advantageous to insert the TP (Test Point) into the PCB (Printed Circuit Board) and check the operation for each section. Since many active devices and switches are used in the PAM, these parts are essential for debugging. Of course, it is also possible to check after signal processing with the control board by implementing RF/analog BIT.

In an embodiment of the present disclosure, contents from M&S to actual production and measurement results for the X-band high-power amplification module for radar have been described. When used for aviation, the surrounding environment that occurs when mounted on an actual flight can be considered.

Therefore, in order to design a module having an EMI shielding function or a temperature compensation function that meets the MIL-STD-461F and MIL-STD-810G standards, the size of the circuit may be increased. Accordingly, physical connectors and mechanical considerations may increase. Therefore, it is necessary to design with consideration of environmental factors and performance. The amplification module to be developed later by summarizing the supplements generated through this PAM design process will be more optimized and robust design.

The results of the examples of the present disclosure are summarized as follows. In the embodiment of the present disclosure, the overall budget design of the PAM and input/output power and characteristics of the circuit unit were checked through the circuit design program. As a result of measurement after production, all of the target performance output level 44dBm or higher, output flatness 1dB or lower, spurious wave -60dBc or lower, harmonic 2nd, 3rd -40dBc or lower, standing wave ratio 1.5:1 are all satisfied, and the actual measured value is the output level 44.69dBm Above, output flatness 0.65, spurious wave -65.54dBc, harmonic 2nd -54dBc, 3rd -73dBc, standing wave ratio 1.3:1 can be measured.

In an embodiment of the present disclosure, the X-band high-power amplifier for radar may be widely used as a module for amplifying an RF signal for radar.

Those of ordinary skill in the art to which the present disclosure pertains may modify and modify the above-described contents without departing from the essential characteristics of the present disclosure. Accordingly, the embodiments of the present disclosure are for explanation rather than limiting the technical spirit, and the scope of the technical spirit of the present disclosure is not limited by these embodiments. The protection scope of the present disclosure should be construed by the following claims, and all technical ideas within the scope equivalent thereto should be construed as being included in the scope of the present disclosure.

Claims (9)

a first coupler, a first amplifier, an attenuator, a second amplifier, a third amplifier, a BPF, and a second coupler, wherein the first coupler monitors the signal level of the transmission input, and the RF signal and power input from the outside The state of the amplifier is checked and the failure of the module is determined with a faulty BIT (Built in Test), the first and second amplifiers are implemented as CMOS amplifiers, and the third amplifier is a high output using a GaN (Gallium Nitride) device. Implemented as an amplifier, the BPF performs filtering to reduce non-linearity and reduce high-frequency components, and the second coupler monitors the output signal of the third amplifier and fails when the transmit output drops due to a failure of the third amplifier. In the output power measurement method of the high output power amplification module to determine the presence or absence of a failure by generating
a process in which the signal generator generates an X-band signal and transmits it to the high-output power amplification module;
The process of controlling, by the PAM port control unit, the operation of the high output power amplification module by generating a Pulse Repetition Interval (PRI) and a Pulse Width (PW); and
A network and spectrum analysis unit, comprising the process of confirming the output power of the high output power amplification module,
The process in which the PAM port control unit controls the operation of the high output power amplification module by generating PRI (Pulse Repetition Interval) and PW (Pulse Width),
Further comprising the process of performing a role of exchanging BIT information of the high-output power amplification module,
The network and spectrum analysis unit, the process of checking the output power of the high output power amplification module,
The process of checking the network analysis unit, VSWR (Voltage Standing Wave Ratio) and test environment cable loss; and
The method for measuring output power of a high-output power amplification module, characterized in that it includes a spectrum analysis unit, the step of checking output, harmonics, spurious waves, and flatness. delete delete delete delete delete delete delete delete

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