KR102270205B1 - 25.8kV class environment-friendly switchgear system using sensor - Google Patents

Abstract

The present invention relates to a 25.8 kV-class eco-friendly switchgear system using a sensor, which wirelessly receives a moisture detection signal from a switchgear of a power substation or receives an electromagnetic wave in case of an internal insulation error to diagnose and monitor moisture intrusion and insulation status of the switchgear. According to the present invention, the 25.8kV eco-friendly switchgear system using a sensor comprises: an eco-friendly switchgear in which an eco-friendly gas including dry air, nitrogen gas, and mixed carbon dioxide gas is enclosed in a metal box; a hybrid sensor installed in the eco-friendly switchgear and detecting moisture or partial discharge of the eco-friendly switchgear; and a diagnostic device receiving a wireless moisture detection signal or partial discharge detection signal from the hybrid sensor to diagnose moisture intrusion state or partial discharge state of the eco-friendly switchgear. The hybrid sensor includes: a wireless moisture sensor detecting moisture or humidity in the eco-friendly switchgear to output the wireless moisture detection signal; a partial discharge sensor detecting the partial discharge generated in the eco-friendly switchgear to output the partial discharge detection signal; and an hybrid antenna wirelessly transmitting the wireless moisture detection signal and the partial discharge detection signal transmitted from the wireless moisture sensor and the partial discharge sensor.

Description

25.8kV eco-friendly switchgear system using sensor

The present invention relates to a 25.8 kV eco-friendly switchgear system using a sensor, and more particularly, by wirelessly receiving a moisture detection signal from a switchgear of a power substation facility or receiving an electromagnetic wave in case of an internal insulation failure, the switchgear It relates to a 25.8kV eco-friendly switchgear system using a sensor that can diagnose and monitor moisture intrusion and insulation status.

In general, gas insulated switchgear (GIS) is a water substation facility that improves reliability by accommodating conductors and various protective devices by using insulating gas with excellent insulation and extinguishing function as an insulating medium in a metal sealed container. and various components such as circuit breaker, disconnector, and grounding switch are combined in a complex manner.

And, when a fault occurs in the power system, the fault current must be cut off quickly and safely in order to protect the system and various power devices.

As a discharge occurs due to insulation breakdown by moisture, the insulation is damaged and a short circuit occurs, which ultimately leads to a breakdown of the substation facility.

As such, serious safety accidents can occur due to malfunctioning substation facilities due to moisture, and the best way to prevent such safety accidents is to completely remove moisture.

However, the prior art cannot completely remove moisture because it simply removes moisture using a desiccant or the like.

_{Compared to the SF 6} gas generally used in gas insulated load switchgear, the insulating properties of eco-friendly gases including dry air, nitrogen gas, and mixed carbon dioxide gas are only 1/3 or less. In order to overcome the low insulation characteristics of these eco-friendly gases, the size of the enclosure is enlarged too much because the distance between the poles and the distance between the poles and the enclosure, which are formed when the movable and fixed electrodes are open, must be secured three times or more. There is this.

In addition, according to the prior art, there is a problem in that a safety accident occurs and the lifespan of the water substation facility is shortened due to insulation breakdown and partial discharge due to moisture existing inside the eco-friendly switchgear.

KR 10-1039733 B1 (Registration date: 2011. 06. 01.)

The present invention for solving the above problems, by wirelessly receiving a moisture detection signal from an eco-friendly switchgear of a power substation facility, or by receiving an electromagnetic wave in case of an internal insulation failure, to diagnose and monitor moisture intrusion and insulation state of the switchgear We would like to provide a 25.8kV eco-friendly switchgear system using a sensor that can do this.

25.8kV eco-friendly switchgear system using a sensor according to an embodiment of the present invention for achieving the above object, an eco-friendly switchgear in which an eco-friendly gas including dry air, nitrogen gas, and mixed carbon dioxide gas is enclosed in a metal box; a hybrid sensor installed in the eco-friendly switchgear and configured to detect moisture or partial discharge of the eco-friendly switchgear; and a diagnostic device for receiving a wireless moisture detection signal or partial discharge detection signal from the hybrid sensor to diagnose a moisture intrusion state or partial discharge state of the eco-friendly switchgear.

The hybrid sensor may include: a wireless moisture sensor that detects moisture or moisture in the eco-friendly switchgear and outputs the wireless moisture detection signal; a partial discharge sensor that detects the partial discharge generated in the eco-friendly switchgear and outputs the partial discharge detection signal; and a hybrid antenna for wirelessly transmitting a wireless moisture detection signal and a partial discharge detection signal transmitted from the wireless moisture sensor and the partial discharge sensor.

The hybrid antenna receives a signal in a band of 800 MHz to 1.1 GHz from the wireless moisture sensor or the partial discharge sensor, and receives a 960 MHz wireless moisture detection signal output from the wireless moisture sensor and wirelessly to the diagnostic device or receives the partial discharge detection signal of the UHF band output from the partial discharge sensor and wirelessly transmits the received signal to the diagnostic device.

The diagnosis apparatus may include: a high-frequency switching unit configured to receive the wireless moisture detection signal or the partial discharge detection signal alternately every predetermined time through an RF high-frequency switching relay; a wireless moisture signal processing unit for processing the received wireless moisture detection signal; a partial discharge signal processing unit processing the received partial discharge detection signal; and a digital signal processing unit for processing the processed wireless moisture detection signal as a digital signal, or for processing the processed partial discharge detection signal as a digital signal.

The hybrid antenna, in a rectangular conductive film having a horizontal width (SW) and a vertical length (SL), is a bar at regular intervals in the horizontal width direction opposite to each other at the center along a diagonal guide line directed from the center to each corner. At least one slot is formed.

According to the present invention, it is possible to simultaneously receive a wireless moisture signal and a partial discharge electromagnetic wave signal in an environmentally friendly switchgear of a power substation facility, and there is no need to separately provide a partial discharge detection device and a moisture penetration detection device.

In addition, there is an advantage in that the two signals received from the hybrid sensor can be alternately performed by using the internal high-frequency switching relay of the diagnostic device at a time interval to measure the moisture content of the eco-friendly switchgear and to measure the electromagnetic wave according to partial discharge.

1 is a configuration diagram schematically showing the overall configuration of a 25.8kV eco-friendly switchgear system using a sensor according to an embodiment of the present invention.
2 is a configuration diagram schematically illustrating an internal configuration of a diagnostic apparatus according to an embodiment of the present invention;
3 is a view showing one configuration example of a hybrid sensor according to an embodiment of the present invention.
4 is a view showing an example of the shape of an antenna substrate in a hybrid antenna according to an embodiment of the present invention.
5 is a cross-sectional view showing another configuration example of a hybrid sensor according to an embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those of ordinary skill in the art can easily implement them. However, the present invention may be embodied in various different forms and is not limited to the embodiments described herein.

1 is a configuration diagram schematically showing the overall configuration of a 25.8kV eco-friendly switchgear system using a sensor according to an embodiment of the present invention.

Referring to FIG. 1 , a 25.8 kV eco-friendly switchgear system 100 using a sensor according to an embodiment of the present invention is an eco-friendly switchgear in which an eco-friendly gas including dry air, nitrogen gas, and mixed carbon dioxide gas is enclosed in a metal box ( 150 ), a hybrid sensor 160 , and a diagnostic device 170 .

Hereinafter, the 25.8kV eco-friendly switchgear system 100 using a sensor according to an embodiment of the present invention will be described as a '25.8kV eco-friendly switchgear system 100'.

The eco-friendly switchgear 150 is a device in which an eco-friendly gas including dry air, nitrogen gas, and mixed carbon dioxide gas is enclosed in a metal box, and an arc is generated when the electrode is disconnected when the fault current is cut off. The arc is extinguished by using the eco-friendly gas (消弧: arc cancellation).

The hybrid sensor 160 is installed in the eco-friendly switchgear 150, detects moisture permeating or permeated into the eco-friendly switchgear 150, or detects partial discharge.

The diagnosis apparatus 170 receives the wireless moisture detection signal or partial discharge detection signal from the hybrid sensor 160 , and diagnoses the moisture intrusion state or partial discharge state of the eco-friendly switchgear 150 .

Here, the hybrid sensor 160 includes a wireless moisture sensor 162 , a partial discharge sensor 164 , and a hybrid antenna 166 .

The wireless moisture sensor 162 detects moisture or moisture in the eco-friendly opening and closing device 150 and outputs it as a wireless moisture detection signal.

The partial discharge sensor 164 detects the partial discharge generated in the eco-friendly switchgear 150 and outputs it as a partial discharge detection signal.

Partial discharge within the switchgear generates rapid rising/falling discharge pulses and radiates UHF (Ultra High Frequency) in the range of 300MHz to 1.5GHz. Since the radiated UHF microwave propagates as microwaves in the coaxial switchgear pipeline, a UHF sensor that can detect it must be installed inside the switchgear. At this time, the partial discharge sensor 164 installed inside the switchgear detects the partial discharge as a UHF sensor and outputs it as a partial discharge detection signal.

Since the detected value must be transmitted to the outside of the switchgear, a structure capable of transmitting the detected value of the UHF sensor to the outside while maintaining the sealed state of the switchgear is required, and the hybrid antenna 166 performs this.

The hybrid antenna 166 wirelessly transmits the wireless moisture detection signal and the partial discharge detection signal transmitted from the wireless moisture sensor 162 and the partial discharge sensor 164 .

The hybrid antenna 166 may receive a signal in the 800 MHz to 1.1 GHz band with respect to the wireless moisture detection signal and the partial discharge detection signal from the wireless moisture sensor 162 or the partial discharge sensor 164 .

The hybrid antenna 166 receives the 960 MHz wireless moisture detection signal output from the wireless moisture sensor 162 and wirelessly transmits it to the diagnostic device 170 or a portion of the UHF band output from the partial discharge sensor 164 . The discharge detection signal may be received and transmitted wirelessly to the diagnostic apparatus 170 .

2 is a configuration diagram schematically illustrating an internal configuration of a diagnostic apparatus according to an exemplary embodiment of the present invention.

Referring to FIG. 2 , the diagnosis apparatus 170 according to an embodiment of the present invention includes a high frequency transfer unit 172 , a wireless moisture signal processing unit 174 , a partial discharge signal processing unit 176 , and a digital signal processing unit 178 . may include

The high-frequency transfer unit 172 receives a wireless moisture detection signal or a partial discharge detection signal while taking turns at a predetermined time through the RF high-frequency switching relay.

The wireless moisture signal processing unit 174 processes the wireless moisture detection signal received by switching through the high frequency switching unit 172 .

The partial discharge signal processing unit 176 processes the partial discharge detection signal received by switching through the high frequency switching unit 172 .

The digital signal processing unit 178 processes the wireless moisture detection signal processed by the wireless moisture signal processing unit 174 as a digital signal, or processes the partial discharge detection signal processed by the partial discharge signal processing unit 176 as a digital signal.

In addition to the above-described configuration, a display unit for displaying the processing result, a storage unit for storing the processing result, etc. may be further included.

Here, the digital signal processing unit 178 may remove noise from the wireless moisture detection data or partial discharge detection data by using Discreate Wavelet Transform (DWT). Here, the 'discrete wavelet transform' uses two or more filters to decompose a signal into wavelet coefficients of different levels, and uses a threshold coefficient to select wavelet coefficients that do not include noise, and the selected wavelet It refers to a signal processing technique that includes the process of reconstructing coefficients into signals. The noise removal method through such discrete wavelet transform is well known in the signal processing field, and a detailed description thereof will be omitted here.

3 is a diagram illustrating one configuration example of a hybrid sensor according to an embodiment of the present invention.

Referring to FIG. 3 , the hybrid sensor 160 according to an embodiment of the present invention includes a housing 410 , a sensing unit 420 , a hybrid antenna 166 in contact with the sensing unit 420 , and an antenna substrate ( 430) may be included.

The housing 410 has an external shape of the hybrid sensor 160 and protects the sensing unit 420 located therein.

The sensing unit 420 includes a wireless moisture sensor 162 for detecting moisture, a partial discharge sensor 164 for detecting partial discharge, and the like.

The antenna substrate 430 forms a hybrid antenna 166 . As shown in FIG. 4, the antenna substrate 430 is a rectangular conductive film having a horizontal width (SW) and a vertical length (SL), and faces each other at the center along a diagonal guide line directed from the center to each corner. At least one bar-shaped slot may be formed at regular intervals in the horizontal width direction. 4 is a diagram illustrating an example of the shape of an antenna substrate in a hybrid antenna according to an embodiment of the present invention.

는 제1 길이(first length)를 나타내고,

은 제2 길이(second length)를 나타내며,

는 슬롯비(slot ratio)을 나타내고, SL은 기판 길이(substrate length)를 나타내며, SW는 기판 폭(substrate width)을 나타내고, h는 기판 두께(substrate thickness)를 나타낸다. h는 예를 들면, 1.5 mm일 수 있다.4,

represents a first length,

represents the second length,

denotes a slot ratio, SL denotes a substrate length, SW denotes a substrate width, and h denotes a substrate thickness. h may be, for example, 1.5 mm.

Here, the substrate size and the log-periodic parameter may be set as shown in Table 1 below.

Substrate size (mm) log periodic parameter SW SL L ₀ (mm) L ₁ (mm) χ(ratio) d(mm) 40 106 20 44 0.86 2

The slot ratio χ can be obtained as in Equation 1 below.

)은 유전 상수 또는 비유전율을 나타내는 것으로서, 예를 들면, 4.4로 할 수 있다. 상대 유전율(

)은 진공을 기준으로 유전율의 크기를 표시하는 단위로서, 절대 유전율(

)을 진공 유전율(

)로 나누어 얻을 수 있다.relative permittivity (dielectric constant,

) represents a dielectric constant or a relative permittivity, and may be, for example, 4.4. relative permittivity (

) is a unit indicating the magnitude of the dielectric constant relative to the vacuum, and the absolute dielectric constant (

) is the vacuum permittivity (

) can be divided by

5 is a cross-sectional view illustrating another configuration example of a hybrid sensor according to an embodiment of the present invention.

Referring to FIG. 5 , in the hybrid sensor 160 according to an embodiment of the present invention, a buffer layer 510 , a driving semiconductor layer 211 , and a first gate insulating layer 520 are disposed on a substrate 500 .

The substrate 500 may be made of various materials such as glass, metal, or plastic. The buffer layer 510 may be disposed on the substrate 500 to reduce or block penetration of foreign matter, moisture, or external air from the lower portion of the substrate 500 , and may provide a flat surface on the substrate 500 . The buffer layer 510 may include an inorganic material such as an oxide or nitride, an organic material, or an organic/inorganic composite, and may have a single-layer or multi-layer structure of an inorganic material and an organic material. The buffer layer 510 may be omitted in some cases.

The driving semiconductor layer 211 may be formed of polysilicon by crystallizing amorphous silicon. Crystallization may be performed by laser annealing or furnace annealing using an excimer laser or a YAG laser. Then, after forming a photoresist pattern on a portion where the driving semiconductor layer 211 is to be formed, the driving semiconductor layer 211 is formed by etching using wet etching, dry etching, or a combination thereof.

Next, a first gate insulating layer 520 covering the driving semiconductor layer 211 is disposed. The first gate insulating layer 520 may include an inorganic material such as silicon oxide, silicon nitride, and/or silicon oxynitride, and may be formed through chemical vapor deposition (CVD) or atomic layer deposition (ALD).

A plurality of first gate electrodes 213g and a first storage electrode C1 of a capacitor are disposed on the first gate insulating layer 520 to overlap the driving semiconductor layer 211 .

A gate electrode material layer is formed over the entire surface of the substrate 100 to form the first gate electrode 213g and the first storage electrode C1 . The gate electrode material layer is formed by chemical vapor deposition, plasma enhanced CVD (PECVD), low pressure CVD (LPCVD), physical vapor deposition (PVD), sputtering, atomic layer deposition ( It may be formed by a deposition method such as atomic layer deposition (ALD).

Next, a photoresist pattern is formed on the gate electrode material layer and the gate electrode material layer is etched using the photoresist pattern to form a first gate electrode 213g and a first storage electrode C1 .

Next, a first doping process of forming a BG line by implanting a dopant into the driving semiconductor layer 211 is performed using the first gate electrode 213g as a doping mask.

The first doping process is to form the BG line, and a dopant of high concentration may be implanted so that the BG line may have conductivity. For example, during the first doping process, a dopant having a concentration of about 1E12 to 1E13 ions/cm 3 may be implanted.

By forming the plurality of BG lines, the semiconductor lines SGL disposed between the BG lines may be formed. The semiconductor line SGL may be an undoped region or a region in which a dopant of a different type than that of the BG line is included in a low concentration. For example, the BG line may include a high concentration of n-type dopant, and the semiconductor line SGL may include a low concentration of p-type dopant. Accordingly, an n-p junction may be formed between the BG line and the semiconductor line SGL.

The first gate electrode 213g used as a doping mask is disposed on the same layer as the first storage electrode C1 of the capacitor, and may be formed through the same process as the first storage electrode C1 to form a doping mask. A BG line (BGL) can be formed without adding a separate process. Also, since the first gate electrode 213g may be used as a part of the gate electrode, there is no need to perform a process of removing the first gate electrode 213g used as a doping mask after the doping process.

A second gate insulating layer 530 having an opening 530h is disposed in a region corresponding to the driving semiconductor layer 211 . The second gate insulating layer 530 may include an inorganic material such as silicon oxide, silicon nitride, and/or silicon oxynitride, and is driven after being formed through chemical vapor deposition (CVD) or atomic layer deposition (ALD). An opening 530h is formed in a region corresponding to the semiconductor layer 211 through an etching process.

A second gate electrode 215 covering the plurality of first gate electrodes 213g and a second storage electrode C2 of a capacitor are formed. In order to form the second gate electrode 215 and the second storage electrode C2 , a second gate electrode material layer is formed over the entire surface of the substrate 500 . Next, a photoresist pattern is formed on the second gate electrode material layer, and the second gate electrode material layer is etched using the photoresist pattern to form the second gate electrode 215 and the second storage electrode C2. can be formed

The second gate electrode 215 is formed while simultaneously covering the plurality of first gate electrodes 213g , and is formed so as not to overlap the source region 211s and the drain region 211d of the driving semiconductor layer 211 . Accordingly, the driving gate electrode G1 including the first gate electrode 213g and the second gate electrode 215 is completed.

The second storage electrode C2 is formed to be overlapped with the first storage electrode C1 and the second gate insulating layer 530 interposed therebetween. Accordingly, the capacitor CAP including the first storage electrode C1 and the second storage electrode C2 is completed.

Next, a second doping process of implanting a dopant into the driving semiconductor layer 211 is performed using the second gate electrode 215 as a doping mask. A source region 211s and a drain region 211d may be formed in the driving semiconductor layer 211 through a second doping process.

The source region 211s and the drain region 211d may be conductive regions by increasing carrier concentration. The source region 211s and the drain region 211d may be formed by doping the driving semiconductor layer 211 with a high concentration of n-type or p-type dopant.

A first planarization layer 540 is disposed on the entire surface of the substrate 500 to cover the second gate electrode 215 and the capacitor CAP. The first planarization layer 540 covers the driving thin film transistor TFT1 and may serve to substantially planarize an upper portion thereof. The first planarization layer 140 may be formed of an organic material such as acryl, benzocyclobutene (BCB), or hexamethyldisiloxane (HMDSO). Also, the first planarization layer 540 may include an inorganic material such as silicon oxide, silicon nitride, and/or silicon oxynitride.

Next, a switching semiconductor layer 217 is disposed on the first planarization layer 540 . The switching semiconductor layer 217 may be formed of polysilicon by crystallizing amorphous silicon. The crystallization may be performed by laser annealing or furnace annealing using an excimer laser or a YAG laser. Next, after forming a photoresist pattern on a portion where the switching semiconductor layer 217 is to be formed, the switching semiconductor layer 217 is formed by etching using wet etching, dry etching, or a combination thereof.

Next, a third gate insulating layer 550 covering the switching semiconductor layer 217 is disposed. The third gate insulating layer 550 may include an inorganic material such as silicon oxide, silicon nitride, and/or silicon oxynitride, and may be formed through CVD or atomic layer deposition (ALD).

Next, the driving source electrode S1 and the driving drain electrode D1 respectively connected to the source region 211s and the drain region 211d of the driving semiconductor layer 211, and the switching semiconductor layer 217 overlapping the switching A gate electrode G2 is disposed.

Each of the driving source electrode S1 and the driving drain electrode D1 is disposed on the third gate insulating layer 550 , and includes a third gate insulating layer 550 , a first planarization layer 540 , and a second gate insulating layer 530 . , may be connected to the source region 211s and the drain region 211d of the driving semiconductor layer 211 through the through hole CNT passing through the first gate insulating layer 520 .

The switching gate electrode G2 is disposed on the third gate insulating layer 550 and overlaps a portion of the switching semiconductor layer 217 where the channel region 217a is to be formed.

Next, a third doping process of forming the source region 217s and the drain region 217d by injecting dopants into the switching semiconductor layer 217 using the switching gate electrode G2 as a doping mask may be performed.

Next, a second planarization layer 560 is disposed on the entire surface of the substrate 500 to cover the switching thin film transistor TFT2 , and an organic light emitting diode OLED is disposed thereon.

The second planarization layer 560 covers the switching thin film transistor TFT2 and may serve to substantially planarize an upper portion thereof. The second planarization layer 560 may be formed of an organic material such as acryl, benzocyclobutene (BCB), or hexamethyldisiloxane (HMDSO). In addition, the second planarization layer 560 may include an inorganic material such as silicon oxide, silicon nitride, and/or silicon oxynitride. The second planarization layer 560 may be formed through CVD or atomic layer deposition (ALD). The second planarization film 560 may be formed of an organic-inorganic composite film, or may be formed by stacking an organic layer and an inorganic layer. After the second planarization layer 560 is formed, a grinding process may be performed to flatten the top surface thereof.

An organic light emitting diode (OLED) having a pixel electrode 310 , a counter electrode 330 , and an intermediate layer 320 interposed therebetween and including an emission layer may be positioned on the second planarization layer 560 . As shown in FIG. 5 , the pixel electrode 310 contacts any one of the driving source electrode S1 and the driving drain electrode D1 through the opening formed in the second planarization layer 560 to form the driving thin film transistor TFT1. is connected with In FIG. 5 , the pixel electrode 310 is illustrated as being connected to the driving drain electrode D1 .

A driving voltage line PL, a data line DL, a switching source electrode S2 and a switching drain electrode D2 may be disposed on the same layer as the pixel electrode 310 . The driving voltage line PL may be connected to the driving source electrode S1 of the driving thin film transistor TFT1 , and the data line DL may be connected to the switching source electrode S2 of the switching thin film transistor TFT2 .

The pixel electrode 310 may be provided as a transparent electrode or a reflective electrode. When provided as a transparent electrode, ITO, IZO, ZnO or In ₂ O ₃ may be provided, and when provided as a reflective electrode, Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, or these It may include a reflective film formed of a compound of ITO, IZO, ZnO, or a transparent film formed of _{In 2} O _{3 .} In some embodiments, the pixel electrode 310 may have an ITO/Ag/ITO structure.

The driving voltage line PL, the data line DL, the switching source electrode S2 , and/or the switching drain electrode D2 may be disposed on the same layer as the pixel electrode 310 and may be simultaneously formed of the same material.

A pixel defining layer 570 may be disposed on the second planarization layer 560 . The pixel defining layer 570 defines a pixel by having an opening corresponding to each sub-pixel, that is, an opening through which at least the central portion of the pixel electrode 310 is exposed. In addition, as shown in FIG. 5 , the pixel defining layer 570 increases the distance between the edge of the pixel electrode 310 and the counter electrode 330 on the pixel electrode 310 , thereby forming the pixel electrode 310 . ) to prevent arcing at the edge. The pixel defining layer 570 may be formed of an organic material such as polyimide or hexamethyldisiloxane (HMDSO).

The intermediate layer 320 of the organic light emitting diode may include a low-molecular or high-molecular material. When containing a low molecular weight material, a hole injection layer (HIL), a hole transport layer (HTL), an organic light emitting layer (EML: Emission Layer), an electron transport layer (ETL: Electron Transport Layer), an electron injection layer ( EIL: Electron Injection Layer) may have a single or complex stacked structure, and copper phthalocyanine (CuPc: copper phthalocyanine), N, N-di(naphthalen-1-yl)-N, N'-di Phenyl-benzidine (N, N'-Di(naphthalene-1-yl)-N, N'-diphenyl-benzidine: NPB), tris-8-hydroxyquinoline aluminum (Alq3), etc. It may contain a variety of organic substances, including These layers can be formed by a method of vacuum deposition.

When the intermediate layer 320 includes a polymer material, it may generally have a structure including a hole transport layer (HTL) and an organic light emitting layer (EML). In this case, the hole transport layer may include PEDOT, and the organic light emitting layer may include a polymer material such as poly-phenylenevinylene (PPV) and polyfluorene. The intermediate layer 320 may be formed by screen printing, inkjet printing, laser induced thermal imaging (LITI), or the like.

Of course, the intermediate layer 320 is not necessarily limited thereto, and may have various structures. In addition, the intermediate layer 320 may include an integral layer over the plurality of pixel electrodes 310 , or may include a layer patterned to correspond to each of the plurality of pixel electrodes 310 .

The counter electrode 330 is disposed to face the pixel electrode 310 with the intermediate layer 320 interposed therebetween. The counter electrode 330 may be integrally formed in the plurality of organic light emitting devices to correspond to the plurality of pixel electrodes 310 . That is, the pixel electrode 310 may be patterned for each pixel, and the counter electrode 330 may be formed such that a common voltage is applied to all pixels. The counter electrode 330 may be provided as a transparent electrode or a reflective electrode.

Holes and electrons injected from the pixel electrode 310 and the counter electrode 330 of the organic light emitting diode (OLED) combine in the light emitting layer of the intermediate layer 320 to generate light.

Since these organic light emitting devices (OLEDs) can be easily damaged by moisture or oxygen from the outside, a thin film encapsulation layer (not shown) or a sealing substrate (not shown) covers these organic light emitting devices to protect them. In addition, various modifications are possible, such as a polarizing layer, a color filter layer, a touch layer, etc. may be further disposed on the thin film encapsulation layer or the sealing substrate.

The hybrid sensor 160 having the above configuration employs a transistor having a BG line and has excellent performance, and it is not necessary to form a separate photoresist pattern when the BG line is formed, so the process can be performed efficiently. have.

In the hybrid sensor 160 configured as described above, when moisture or moisture is detected by the wireless moisture sensor 162 or the partial discharge sensor 164, or partial discharge is detected, the driving thin film transistor TFT1 is the gate electrode ( A voltage is applied to G1) to turn on, power is applied from the source electrode S1 to the drain electrode D1, and the organic light emitting diode OLED is turned on through the pixel electrode 310 in contact with the drain electrode D1. will be illuminated

In addition, the switching thin film transistor TFT2 is turned on by applying a voltage to the gate electrode G2, power is applied from the switching source electrode S2 to the switching drain electrode D2, and the hybrid antenna 166 connected thereto is In operation, a wireless moisture detection signal or partial discharge detection signal is generated and transmitted wirelessly.

As described above, according to the present invention, it is possible to wirelessly receive a moisture sensing signal from an eco-friendly switchgear of a power substation facility or receive an electromagnetic wave in case of an internal insulation abnormality to diagnose and monitor moisture intrusion and insulation state of the switchgear system. It is possible to realize a 25.8kV eco-friendly switchgear system using a sensor that allows

100 : 25.8kV eco-friendly switchgear system
150: eco-friendly switchgear 160: hybrid sensor
162: wireless moisture sensor 164: partial discharge sensor
166: hybrid antenna 170: diagnostic device
172: high frequency transfer unit 174: wireless moisture signal processing unit
176: partial discharge signal processing unit 178: digital signal processing unit
211: driving semiconductor layer 213g: first gate electrode
215: second gate electrode 217: switching semiconductor layer
310: pixel electrode 320: intermediate layer
330: counter electrode 410: housing
420: sensing unit 430: antenna board
500: substrate 510: buffer film
520: first gate insulating film 530: second gate insulating film
540: first planarization film 550: third gate insulating film
560: second planarization layer 570: pixel defining layer

Claims (3)

An eco-friendly switchgear in which an eco-friendly gas including dry air, nitrogen gas, and mixed carbon dioxide gas is enclosed in a metal box;
a hybrid sensor installed in the eco-friendly switchgear and configured to detect moisture or partial discharge of the eco-friendly switchgear; and
a diagnostic device for receiving a wireless moisture detection signal or partial discharge detection signal from the hybrid sensor to diagnose a moisture intrusion state or partial discharge state of the eco-friendly switchgear;
includes,
The hybrid sensor is
a wireless moisture sensor that detects moisture or moisture in the eco-friendly switchgear and outputs the wireless moisture detection signal;
a partial discharge sensor that detects the partial discharge generated in the eco-friendly switchgear and outputs the partial discharge detection signal; and
a hybrid antenna for wirelessly transmitting a wireless moisture detection signal and a partial discharge detection signal transmitted from the wireless moisture sensor and the partial discharge sensor;
includes,
The hybrid antenna is
In a rectangular conductive film having a horizontal width (SW) and a vertical length (SL), a bar-shaped slot at regular intervals in the horizontal width direction opposite to each other at the center along a diagonal guide line directed from the center to each corner ) is formed of at least one or more,
The diagnostic device is
a high-frequency switching unit configured to receive the wireless moisture detection signal or the partial discharge detection signal alternately every predetermined time through an RF high-frequency switching relay;
a wireless moisture signal processing unit for processing the received wireless moisture detection signal;
a partial discharge signal processing unit processing the received partial discharge detection signal; and
a digital signal processing unit for processing the processed wireless moisture detection signal as a digital signal or for processing the processed partial discharge detection signal as a digital signal;
25.8kV eco-friendly switchgear system using a sensor, characterized in that it comprises a.
The method of claim 1,
The hybrid antenna receives a signal in the 800 MHz to 1.1 GHz band from the wireless moisture sensor or the partial discharge sensor,
Receives the 960 MHz wireless moisture detection signal output from the wireless moisture sensor and transmits it wirelessly to the diagnostic device,
25.8kV eco-friendly switchgear system using a sensor, characterized in that receiving the partial discharge detection signal of the UHF band output from the partial discharge sensor and transmitting it wirelessly to the diagnostic device
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