KR102253432B1 - Resin composition, resin film, method for producing resin film, method for producing semiconductor device, and semiconductor device - Google Patents

Abstract

(Task) Wafers can be collectively molded, and in particular, have good moldability for large-diameter, thin-film wafers, and at the same time provide low warpage and good wafer protection performance, good adhesion, good reliability and good heat resistance after molding, and mold Providing a resin composition and a resin film that can satisfactorily perform a process and can be used suitably for a wafer level package, a method for producing the resin film, and a semiconductor device molded by the resin film, and the semiconductor device Provides a manufacturing method.
(Solution means) A resin characterized in that it contains a silicone resin (A), (B) an epoxy resin curing agent, and (C) a filler having a weight average molecular weight of 3,000 to 500,000 having a structural unit represented by the following composition formula (1). Composition.

Description

A resin composition, a resin film, a method of manufacturing a resin film, a method of manufacturing a semiconductor device, and a semiconductor device TECHNICAL FIELD [RESIN COMPOSITION, RESIN FILM, METHOD FOR PRODUCING RESIN FILM, METHOD FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE}

The present invention relates to a resin composition, a resin film and a method for producing the same, and a semiconductor device and a method for producing the same.

In recent years, the size of wafers used in the manufacture of semiconductor devices is becoming larger and thinner, and a technology for sealing them at a wafer level is required. Therefore, in addition to the conventional transfer molding method of a solid type epoxy resin, a compression molding method using a liquid type epoxy resin has been proposed (Patent Document 1).

However, in transfer molding, since the resin flows in a narrow area, there is a problem that wire deformation is likely to occur, and filling defects accompanying an increase in the sealing area are liable to occur. In addition, in the compression molding method, there is a problem that it is difficult to finely control the molding range at the end face of the wafer, and it is not easy to optimize the fluidity and physical properties when the liquid encapsulating resin is introduced into the molding machine. In addition, warpage of the wafer after the mold, which has not been a problem until now, has become a problem due to the recent large diameter of the wafer and the thinning of the wafer, and further, good wafer protection performance is also required. Therefore, it is possible to collectively mold the wafer without causing problems such as poor filling on the wafer surface, and development of a wafer mold material having low warpage, good wafer protection performance, good adhesion, good reliability, and good heat resistance after molding It was being desired.

International Publication No. 2009/142065

The present invention was made in order to solve the above problems, it is possible to collectively mold (wafer mold) wafers, and in particular, it has good moldability for large-diameter, thin-film wafers, and at the same time, low warpability and good wafer protection performance after molding, Providing a resin composition and a resin film which imparts good adhesion, good reliability and good heat resistance, can perform a mold process satisfactorily, and can be suitably used for a wafer level package, a method for producing the resin film, and the resin An object of the present invention is to provide a semiconductor device molded with a film, and a method for manufacturing the semiconductor device.

In order to solve the above problems, in the present invention, a silicone resin (A) having a weight average molecular weight of 3,000 to 500,000 having a structural unit represented by the following composition formula (1),

[In the formula, R ¹ to R ⁴ each independently represent a monovalent hydrocarbon group having 1 to 8 carbon atoms, provided that R ³ and R ⁴ are not at the same time a methyl group, and m and n are each independently 0 to 300 Is an integer, a and b are both positive numbers, a+b=1, and X is each independently represented by a divalent group selected from the group of the following formulas (2), (3), (4) and (5) Is a linking group, and the number of moles of the unit represented by the following formula (2) contained in the silicone resin (A) is c, the number of moles of the unit represented by the following formula (3) is d, the number of units represented by the following formula (4) When the number of moles is e and the number of moles of the unit represented by the following formula (5) is f, e is a positive number, c, d, and f are each 0 or a positive number, c+d+e+f/silicone resin (A) In the case of satisfying the number of moles of the linking group represented by X contained in = 1, and e = 1, c + d = 1 to 10, f = 0 to 1.

(Wherein, V is

Is a divalent organic group selected from any one of, p is 0 or 1, and R ⁵ represents a hydrogen atom or a methyl group, g is an integer of 0 to 7, and R ⁶ and R ⁷ each independently have 1 carbon number It is an alkyl group or an alkoxy group of 4 to, and may be different or the same as each other, and h is any one of 0, 1 and 2)

(In the formula, R ⁸ represents a hydrogen atom or a methyl group, q is an integer of 0 to 7)

(Wherein, Y is

A divalent group selected from any one of (in the formula, R each independently represents a hydrogen atom or a methyl group), and R ⁹ and R ¹⁰ each independently represent a hydrogen atom or a methyl group)

(In the formula, R ¹² and R ¹³ each independently represent a monovalent hydrocarbon group having 1 to 8 carbon atoms, provided that R ¹² and R ¹³ are not at the same time a methyl group, and r and s are each independently 0 to 300 Is an integer of, and R ¹¹ represents a hydrogen atom or a methyl group, and k is an integer of 0 to 7)]

(B) an epoxy resin curing agent, and

(C) filler

It provides a resin composition characterized in that it contains.

If a resin composition containing a silicone resin (A) having such characteristics can be formed into a film shape, the wafers can be collectively molded (wafer molded). In particular, it has good moldability for large-diameter, thin-film wafers, At the same time, it becomes a resin composition which is excellent in adhesion, low warpage, wafer protection, reliability and heat resistance after molding, and can be suitably used for a wafer level package.

In addition, Y in the above formula (4) is

It is preferable that it is a divalent group selected from any one of them.

If Y is a resin composition containing a silicone resin (A), which is one of the above couplers, it is easy to form a film, so that the wafers can be easily molded collectively. In particular, a better mold for large-diameter, thin-film wafers. In addition, after molding, adhesion, low warpage, wafer protection, reliability, and heat resistance become even more excellent, and a resin composition that can be more suitably used for a wafer level package is obtained.

Further, it is preferable that the component (B) is an epoxy resin curing agent of any one of amine-based, phenol-based and acid anhydride-based epoxy resin curing agents.

If it is a resin composition containing such (B) an epoxy resin curing agent, it is easy to form a film, so that the wafers can be easily molded collectively. In particular, it has better moldability for large-diameter, thin-film wafers, and after molding. In this regard, adhesion, low warpage, wafer protection, reliability, and heat resistance become more excellent, and a resin composition that can be more suitably used for wafer-level packages is obtained.

In addition, it is preferable that the amount of the component (B) is 5 to 50 parts by mass per 100 parts by mass of the component (A), and the mass fraction of the component (C) with respect to the total mass is 50 to 95% by mass.

Since such a resin composition is easy to form in a film shape, wafers can be easily molded in a batch. In particular, it has better moldability for large-diameter, thin-film wafers, and adhesion, low warpability, and wafer protection after molding. , Reliability and heat resistance are further excellent, and a resin composition that can be more suitably used for a wafer level package is obtained.

In addition, it is preferable that the resin composition of the present invention further contains an epoxy resin curing accelerator.

As described above, when the resin composition of the present invention contains an epoxy resin curing accelerator, the adhesion to the wafer and the wafer protection property are further improved, so that it can be more suitably used for a wafer-level package.

In addition, it is preferable that the resin composition of the present invention further contains an epoxy resin other than the component (A).

In this way, by blending epoxy resins other than the component (A), adhesion and protection to the wafer can be further improved.

In addition, it is preferable that the component (C) is silica.

As described above, if the (C) filler is a resin composition in which silica is used, the wafer protection properties can be further improved, heat resistance, moisture resistance, strength, etc. can be further improved, and reliability can be further improved.

In addition, the present invention provides a resin film, characterized in that the resin composition is a film.

A resin film formed in such a film shape has good molding performance for wafers, especially large-diameter, thin-film wafers, and problems such as poor filling on the wafer surface because there is no need to inflow resin when the wafers are collectively molded. There is no thing that causes it. Further, the resin film in which the resin composition of the present invention is filmed becomes a wafer mold material having both good adhesion to a wafer, wafer protection, low warpage, reliability, and heat resistance at the same time.

In addition, in the present invention, by coating the resin composition on a release film, two or more resin-forming films having a resin composition layer on the release film are prepared and prepared, and the resin composition of the two or more resin-forming films It provides a method for producing a resin film, characterized in that layers are overlapped.

In addition, in this case, at least one of the prepared resin-forming films is formed as a resin-forming film in which the resin composition layer and a protective film for protecting the resin composition layer are sequentially formed on the release film, and the resin-forming films are mutually It is preferable to perform overlapping of the resin composition layers by removing the protective film or the release film so that the resin composition layers to be laminated to each other are exposed from the resin-forming film, and overlapping the exposed resin composition layers.

If it is such a method for producing a resin film, a composite resin film including a multi-layered resin film can be easily produced.

In addition, in the present invention, there is provided a method for manufacturing a semiconductor device, comprising a step of attaching the resin film to a semiconductor wafer and molding the semiconductor wafer into the resin film, and a step of separating the molded semiconductor wafer into pieces. to provide.

Since the semiconductor wafer molded with the resin film as described above has little warp and is sufficiently protected, it is possible to manufacture a high-quality semiconductor device with high yield by separating it into pieces.

In addition, the present invention provides a semiconductor device, characterized in that the semiconductor wafer molded with the heat-cured film of the resin film is a piece.

A semiconductor wafer molded with a heat-cured film obtained by heat-curing a resin film as described above is a wafer sufficiently protected due to low warpage, and a semiconductor device obtained by separating the resin film becomes a high-quality semiconductor device without warpage.

Since the resin composition of the present invention can be processed into a film shape, it has good mold performance for wafers, particularly large diameter and thin film wafers. In addition, since it is excellent in adhesion after molding, low warpage, wafer protection, reliability, and heat resistance, and it becomes possible to collectively mold wafers, it is a resin film that can be suitably used for a wafer-level package. Moreover, if it is the manufacturing method of the resin film of this invention, it becomes possible to manufacture the resin film containing multiple layers easily. In addition, the semiconductor device of the present invention and a method for manufacturing the same can provide a high-quality semiconductor device with good yield.

1A is a cross-sectional view showing an example of a wafer molded with the resin film of the present invention, and (B) is a cross-sectional view showing another example of the wafer molded with the resin film of the present invention.

As described above, in recent years, wafers can be collectively molded without causing problems such as poor filling on the wafer surface, and a wafer having good adhesion, low warpage, good wafer protection performance, good reliability, and good heat resistance after molding. Development of a mold material was desired.

Therefore, the inventors of the present invention repeated intensive studies to achieve the above problems, and as a result of combining the following (A) silicone resin and the following (B) epoxy resin curing agent, a resin having excellent adhesion to the wafer, low warpage after curing, and heat resistance After finding out that the composition is imparted, and since the following (C) filler improves the wafer protection property and the reliability of the resin composition after curing, the resin film obtained from the resin composition containing these components has excellent adhesion to the wafer and protects the wafer. The present invention was completed by finding out that it could be a wafer mold material having both properties, low warpage, reliability, and heat resistance at the same time.

Hereinafter, the resin composition of the present invention, a resin film (composite film) obtained from the resin composition, and a method for producing the same, a semiconductor device and a method for producing the same will be described in detail, but the present invention is not limited thereto.

The resin composition according to the present invention is a resin composition containing the following (A) silicone resin, the following (B) an epoxy resin curing agent, and (C) a filler.

[(A) Silicone resin]

In the present invention, the silicone resin of the component (A) functions as imparting film-forming ability. Further, when the obtained resin film is used as a wafer mold material, adhesion to the wafer, low warpage, good moldability and heat resistance are imparted.

The silicone resin of the component (A) is a silicone resin having a weight average molecular weight of 3,000 to 500,000 having a structural unit represented by the following compositional formula (1).

[In the formula, R ¹ to R ⁴ each independently represent a monovalent hydrocarbon group having 1 to 8 carbon atoms, provided that R ³ and R ⁴ are not at the same time a methyl group, and m and n are each independently 0 to 300 Is an integer of, and a and b are both positive numbers, a+b=1, and X is each independently a divalent group selected from the group of the following formulas (2), (3), (4) and (5) The linking group represented, and the number of moles of the unit represented by the following formula (2) contained in the silicone resin (A) is c, the number of moles of the unit represented by the following formula (3) is d, and the unit represented by the following formula (4) When the number of moles of is e and the number of moles of the unit represented by the following formula (5) is f, e is a positive number, c, d, and f are each 0 or a positive number, and c+d+e+f/silicone resin (A In the case of the number of moles of the linking group represented by X in) = 1 and e = 1, c+d = 1 to 10, f = 0 to 1.

(Wherein, V is

Is a divalent organic group selected from any one of, p is 0 or 1, and R ⁵ represents a hydrogen atom or a methyl group, g is an integer of 0 to 7, and R ⁶ and R ⁷ each independently have 1 carbon number It is an alkyl group or an alkoxy group of 4 to, and may be different or the same as each other, and h is any one of 0, 1 and 2)

(In the formula, R ⁸ represents a hydrogen atom or a methyl group, q is an integer of 0 to 7)

(Wherein, Y is

A divalent group selected from any one of (in the formula, R each independently represents a hydrogen atom or a methyl group), and R ⁹ and R ¹⁰ each independently represent a hydrogen atom or a methyl group)

(In the formula, R ¹² and R ¹³ each independently represent a monovalent hydrocarbon group having 1 to 8 carbon atoms, provided that R ¹² and R ¹³ are not at the same time a methyl group, and r and s are each independently 0 to 300 Is an integer of, and R ¹¹ represents a hydrogen atom or a methyl group, and k is an integer of 0 to 7)]

The silicone resin (A) of the present invention contains a repeating unit represented by the above formula (1), and a weight average molecular weight in terms of polystyrene measured by GPC using tetrahydrofuran as an elution solvent is 3,000 to 500,000, preferably 5,000 to It is a polymer of 200,000.

a and b represent the molar ratio of each repeating unit in the silicone resin (A), all are positive numbers, and a+b=1, but preferably 0.05≤a≤0.8, particularly 0.1≤a≤0.7, preferably 0.2≤ b≤0.95, especially 0.3≤b≤0.9. Each unit may be bound at random or may be bound as a block polymer.

In the above formula (1), m and n are each independently an integer of 0 to 300, preferably m is 0 to 200, particularly 0 to 100, n is 0 to 200, particularly 0 to 100.

In addition, X is each independently a divalent linking group selected from the group represented by Formulas (2), (3), (4) and (5), and the number of moles of the unit represented by Formula (2) is c, When d is the number of moles of the unit represented by the above formula (3), e is the number of moles of the unit represented by the above formula (4), and f is the number of moles of the unit represented by the above formula (5), e is a positive number, c , d and f are each 0 or a positive number, and c+d+e+f/the number of moles of the linking group represented by X contained in the silicone resin (A) = 1, and e is 1 in the case of a ratio, c +d=1 to 10, preferably c+d=2 to 10, f=0 to 1, preferably f=0 to 0.5.

In addition, R ¹ to R ⁴ are each independently a monovalent hydrocarbon group having 1 to 8 carbon atoms, preferably 1 to 6, and examples thereof include an alkyl group, a cycloalkyl group, and an aryl group. For example, a methyl group, an ethyl group , A propyl group, a hexyl group, a cyclohexyl group, and a phenyl group. Among them, a methyl group and a phenyl group are preferable from the ease of availability of raw materials. However, R ³ and R ⁴ are not methyl groups at the same time.

In the above formula (2), R ⁵ represents a hydrogen atom or a methyl group, and R ⁶ and R ⁷ are each independently an alkyl group or an alkoxy group having 1 to 4 carbon atoms, and may be different from each other or the same. Examples of R ⁶ and R ⁷ include a methyl group, an ethyl group, a propyl group, a butyl group, a methoxy group, an ethoxy group, a propoxy group, and a butoxy group. g is an integer from 0 to 7. p is 0 or 1, and h is any one of 0, 1 and 2.

In the above formula (3), R ⁸ represents a hydrogen atom or a methyl group, and q is an integer of 0 to 7. In the formula (4), R ⁹ and R ¹⁰ each independently represent a hydrogen atom or a methyl group.

Moreover, it is preferable that Y in said formula (4) is selected from any one of the following bonding groups among the above.

In the above formula (5), R ¹² and R ¹³ each independently represent a monovalent hydrocarbon group having 1 to 8 carbon atoms, but R ¹² and R ¹³ are not at the same time a methyl group. r and s are each independently an integer of 0 to 300, preferably r is 0 to 200, particularly 0 to 100, s is 0 to 200, particularly 0 to 100. In addition, R ¹¹ represents a hydrogen atom or a methyl group, and k is an integer of 0 to 7.

[(A) Method for producing silicone resin]

The silicone resin (A) in the present invention is a compound represented by the following formula (6), the following formula (7), the following formula (8), the following formula (9), the following formula (10), and the following formula (11) It can be produced by addition polymerization in the presence of a metal catalyst using a compound selected from.

(In the formula, R ¹ to R ⁴ each independently represent a monovalent hydrocarbon group having 1 to 8 carbon atoms, provided that R ³ and R ⁴ are not at the same time a methyl group, and m and n are each independently 0 to 300 Is the essence of)

(Wherein, V is

Is a divalent organic group selected from any one of, p is 0 or 1, and R ⁵ represents a hydrogen atom or a methyl group, g is an integer of 0 to 7, and R ⁶ and R ⁷ each independently have 1 carbon number It is an alkyl group or an alkoxy group of 4 to, and may be different or the same as each other, and h is any one of 0, 1 and 2)

(In the formula, R ⁸ represents a hydrogen atom or a methyl group, q is an integer of 0 to 7)

(Wherein, Y is

A divalent group selected from any one of (in the formula, R each independently represents a hydrogen atom or a methyl group), and R ⁹ and R ¹⁰ each independently represent a hydrogen atom or a methyl group)

(In the formula, R ¹² and R ¹³ each independently represent a monovalent hydrocarbon group having 1 to 8 carbon atoms, provided that R ¹² and R ¹³ are not at the same time a methyl group, and r and s are each independently 0 to 300 Is an integer of, and R ¹¹ represents a hydrogen atom or a methyl group, and k is an integer of 0 to 7)

Examples of the metal catalyst include platinum group metals such as platinum (including platinum black), rhodium, and palladium; H ₂ PtCl ₄ xH ₂ O, H ₂ PtCl ₆ xH ₂ O, NaHPtCl ₆ xH ₂ O, KHPtCl ₆ xH ₂ O, Na ₂ PtCl ₆ xH ₂ O, K ₂ PtCl ₄ xH ₂ O, PtCl ₄ · xH ₂ O, PtCl ₂ , Na ₂ HPtCl ₄ · xH ₂ O (in the formula, x is preferably an integer of 0 to 6, particularly preferably 0 or 6), such as chlorinated platinum, chloroplatinic acid and chloride Platinum salts; Alcohol-modified chloroplatinic acid (as described for example in US Pat. No. 3,220,972); Complexes of chloroplatinic acid and olefins (such as those described in US Pat. No. 3,159,601, US Pat. No. 3,159,662, and US Pat. No. 3,775,452); A platinum group metal such as platinum black or palladium supported on a carrier such as alumina, silica, or carbon; Rhodium-olefin complex; Chlorotris(triphenylphosphine)rhodium (so-called Wilkinson catalyst); And a complex of platinum chloride, chloroplatinic acid or chloroplatinate and a vinyl group-containing siloxane (particularly, a vinyl group-containing cyclic siloxane).

The amount of the catalyst used may be a catalytic amount, and it is preferable that it is 0.0001 to 0.1% by mass, preferably 0.001 to 0.01% by mass, based on the total amount of the raw material compound provided for the reaction as a platinum group metal. The addition reaction can be carried out without the presence of a solvent, but a solvent may be used if necessary. As the solvent, for example, a hydrocarbon-based solvent such as toluene and xylene is preferable. The reaction temperature may be a temperature at which the catalyst is not deactivated and the polymerization can be completed in a short time. For example, 40 to 150°C, particularly preferably 60 to 120°C. The reaction time may be appropriately selected depending on the type and amount of the polymer, and, for example, 0.5 to 100 hours, particularly preferably 0.5 to 30 hours. When a solvent is used, it is subjected to distillation under reduced pressure after completion of the reaction, and the solvent is distilled off.

Although the reaction method is not particularly limited, for example, a compound represented by formula (6), a compound represented by formula (7), a compound represented by formula (8), and a compound represented by formula (10) are reacted. In the case, first, the compounds represented by formulas (8) and (10) are mixed and heated, then a metal catalyst is added to the mixture, and then the compounds represented by formulas (6) and (7) are added from 0.1 to The method of dripping over 5 hours is preferable.

The compounding ratio of each compound is the sum of the number of moles of hydrosilyl groups in the compound represented by the above formulas (6) and (7), and the above formulas (8), (9), (10) and (11). It is preferable to blend so that the total number of moles of alkenyl groups in the compound represented by) is 0.67 to 1.67, preferably 0.83 to 1.25, with respect to the total number of moles of alkenyl groups. The weight average molecular weight of the polymer can be controlled by using a monoallyl compound such as o-allylphenol or a monohydrosilane or monohydrosiloxane such as triethylhydrosilane as a molecular weight modifier.

[(B) Epoxy resin curing agent]

The component (B) is a component for crosslinking reaction with the silicone resin (A) having an epoxy group, and by adding the component (B), the adhesion of the resin to the wafer, protection, and reliability are further improved. In the present invention, the epoxy resin curing agent may be any one normally used for curing the epoxy resin, and is not particularly limited, but an aromatic curing agent or an alicyclic curing agent is more preferable from the viewpoint of heat resistance.

Examples of such epoxy resin curing agents include amine curing agents, phenolic curing agents, acid anhydride curing agents, boron trifluoride amine complex salts, and the like. It is desirable. In addition, the epoxy resin curing agent may be used alone or in combination of two or more.

Examples of the amine curing agent include aliphatic amine curing agents such as diethylenetriamine, triethylenetetramine, and tetraethylenepentamine, alicyclic amine curing agents such as isophoronediamine, diaminodiphenylmethane, and phenylenediamine. Aromatic amine-based curing agents, dicyandiamide, and the like.

Further, a phenolic curing agent can also be used as the epoxy resin curing agent. As the phenolic curing agent, for example, a resol-type phenol resin prepared from alkylphenols such as phenol, bisphenol A, p-tert-butylphenol, octylphenol, p-cumylphenol, p-phenylphenol, and cresol as raw materials, and / Or a novolac type phenol resin is mentioned.

Examples of the acid anhydride curing agent include phthalic anhydride, pyromellitic anhydride, trimellitic anhydride, and hexahydrophthalic anhydride.

The compounding amount of the epoxy resin curing agent (B) is not particularly limited, but is preferably 5 to 50 parts by mass, and more preferably 5 to 45 parts by mass based on 100 parts by mass of the component (A). When the blending amount of the epoxy resin curing agent is within the above range, the adhesion and protection properties of the resin composition are further improved. In addition, a cured product of the resin composition is preferable because it becomes a cured product having excellent reliability.

[(C) Filler]

The component (C) imparts wafer protection to the resin composition of the present invention, improves heat resistance, moisture resistance, strength, and the like, and can further increase reliability. As a filler, for example, talc, calcined clay, unbaked clay, mica, silicates such as glass, titanium oxide, alumina, fused silica (melted spherical silica, fused crushed silica), oxides such as crystalline silica powder, calcium carbonate, magnesium carbonate , Carbonates such as hydrotalcite, aluminum hydroxide, magnesium hydroxide, hydroxides such as calcium hydroxide, sulfates or sulfites such as barium sulfate, calcium sulfate, and calcium sulfite, zinc borate, barium metaborate, aluminum borate, calcium borate, sodium borate, etc. And nitrides such as borates, aluminum nitride, boron nitride, and silicon nitride. These fillers may be mixed singly or two or more may be mixed together.

Among these, silica powders such as fused silica and crystalline silica are preferred. Examples of the silica powder include reinforcing silica such as fumed silica and precipitated silica; And crystalline silica such as quartz. Specifically, Nippon Aerosil Co., Ltd. Aerosil R972, R974, R976; SE-2050, SC-2050, SE-1050, SO-E1, SO-C1, SO-E2, SO-C2, SO-E3, SO-C3, SO-E5, SO- manufactured by Admatex Co., Ltd. C5; Musil120A, Musil130A, etc. manufactured by Shin-Etsu Chemical Co., Ltd. are illustrated.

The average particle diameter of the filler is not particularly limited, but is preferably 0.01 µm or more and 20 µm or less, and particularly preferably 0.01 µm or more and 10 µm or less. When the average particle diameter of the filler is 0.01 µm or more, the filler is difficult to aggregate and the strength is increased, which is preferable. Further, when the thickness is 20 µm or less, the film-based performance increases, the fluidity of the resin between the chips increases, and the filling property becomes good, which is preferable. In addition, the average particle diameter can be calculated|required by the particle size distribution measuring apparatus by laser light diffraction method, and can be measured as the mass average value D ₅₀ (that is, the particle diameter or median diameter when the cumulative mass becomes 50%).

The content of the filler is preferably 50% by mass or more and 95% by mass or less, preferably 60% by mass or more and 92% by mass or less with respect to the total mass of the resin composition of the present invention. When the content of the filler is 95% by mass or less, the film-based performance increases, the fluidity of the resin increases, and the filling property becomes good, which is preferable. Moreover, if it is 50 mass% or more, the effect as a filler is fully exhibited.

Epoxy resin curing accelerator

In addition, the resin composition of the present invention may further contain an epoxy resin curing accelerator in addition to the epoxy resin curing agent. By containing the epoxy resin curing accelerator, the curing reaction can be appropriately and uniformly promoted. The blending amount of the epoxy resin curing accelerator is preferably 0.1 to 10 parts by mass, particularly 0.2 to 5 parts by mass, based on 100 parts by mass of the component (A).

Epoxy resin curing accelerators are, for example, 2-methylimidazole, 2-ethylimidazole, 2-ethyl-4-methylimidazole, and ethylisocyanate compounds of these compounds, 2-phenylimidazole, 2- Imidazole compounds such as phenyl-4-methylimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole, and 2-phenyl-4,5-dihydroxymethylimidazole, 1,8 -Diazabicyclo (5.4.0) undecene-7 (DBU), 1,5-diazabicyclo (4.3.0) nonene-5 (DBN), organic acid salt of DBU, phenolic resin salt of DBU, DBU derivative DBU-based compounds such as tetraphenylborate salt, triphenylphosphine, tributylphosphine, tris(p-methylphenyl)phosphine, tris(p-methoxyphenyl)phosphine, tris(p-ethoxyphenyl)phosphine , Triorganophosphines such as triphenylphosphine triphenylborate, tetraphenylphosphine tetraphenylborate, quaternary phosphonium salts, tertiary amines such as triethylene ammonium triphenylborate, and tetraphenyls thereof Borates and the like. The epoxy resin curing accelerator may be used singly or in combination of two or more.

Epoxy resin

Epoxy resins other than the silicone resin (A) may be further added to the resin composition of the present invention for the purpose of improving the adhesion and protection to the wafer. Since the epoxy resin crosslinks with the epoxy resin curing agent (B) together with the silicone resin (A), the adhesion of the resin to the wafer, protection, and reliability are further improved.

Epoxy resins are, for example, bisphenol A type epoxy resins, bisphenol F type epoxy resins, or hydrogenated ones thereof, glycidyl ether type epoxy resins such as phenol novolak type epoxy resins and cresol novolak type epoxy resins, hexa Glycidyl ester epoxy resins such as hydrophthalate glycidyl ester and dimer acid glycidyl ester, glycidyl amine epoxy resins such as triglycidyl isocyanurate, tetraglycidyldiaminodiphenylmethane, etc. And a bisphenol A type epoxy resin, a bisphenol F type epoxy resin, a phenol novolak type epoxy resin, and a cresol novolak type epoxy resin. These commercially available products include, for example, jER1001 (manufactured by Mitsubishi Chemical Co., Ltd.), Epiclon 830S (manufactured by DIC Corporation), jER517 (manufactured by Mitsubishi Chemical Corporation), EOCN103S (manufactured by Nippon Kayaku Corporation), for example Manufacturing) and the like.

When blending, the amount of the epoxy resin to be blended is preferably 1 to 50 parts by mass, particularly 2 to 30 parts by mass, based on 100 parts by mass of the component (A).

Silane Coupling agent

The resin composition of the present invention may contain a silane coupling agent. By including the silane coupling agent, the adhesion of the resin composition to the adherend (wafer) can be further improved.

Examples of the silane coupling agent include an epoxy silane coupling agent and an aromatic-containing aminosilane coupling agent. These may be used alone or may be used in combination of two or more. The content of the silane coupling agent is not particularly limited, but in the case of blending, it is preferably 0.01% by mass or more and 5% by mass or less of the total mass of the resin composition of the present invention.

Moreover, the resin composition of this invention may contain components other than the above. For example, in order to improve the compatibility between the silicone resin (A) and the epoxy resin curing agent (B), or to improve various properties such as storage stability or workability of the resin composition, various additives may be appropriately added. For example, internal releasing agents such as fatty acid esters, glyceric acid esters, zinc stearate, calcium stearate, etc., phenolic, phosphorus, or sulfur antioxidants, and the like can be added.

Organic solvent

As other optional components, an organic solvent can be used. That is, although the resin composition of the present invention may be used without a solvent, it may be dissolved or dispersed in an organic solvent to prepare a solution or dispersion (hereinafter, simply referred to as "solution") before use. As this organic solvent, N,N-dimethylacetamide, methyl ethyl ketone, N,N-dimethylformamide, cyclohexanone, cyclopentanone, N-methyl-2-pyrrolidone, toluene, methanol, ethanol, isopropanol, Acetone, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, and the like, and preferably methyl ethyl ketone, cyclopentanone, propylene glycol monomethyl ether, and propylene glycol monomethyl ether acetate. These organic solvents may be used alone or in combination of two or more.

<resin film>

It is preferable that the resin composition of the present invention is formed in a film shape. If the resin composition of the present invention is a film-formed resin film, it has particularly good moldability for a large-diameter, thin-film wafer, and there is no need to introduce a resin when the wafers are collectively molded. Therefore, wire deformation that may occur in the conventional transfer molding, poor filling of the wafer surface, difficulty in controlling the molding range that may occur in the compression molding method, and problems of fluidity and physical properties of the liquid encapsulating resin can be fundamentally solved.

The thickness of the resin film is not particularly limited, but it is preferably 50 µm or more and 1,000 µm or less, and more preferably 80 µm or more and 700 µm or less. If it is such a thickness, it is preferable because it becomes a resin film which is further excellent in low warpage property and protection property.

Accordingly, the present invention provides a resin film formed by filming the resin composition. Such a resin film is provided, for example, in the form of a resin film with a protective layer having a resin film and a protective layer for covering the resin film. The protective layer described later can be used. Hereinafter, an example of the method for producing a resin film of the present invention will be described.

(Production method of resin film)

(A) silicone resin, (B) epoxy resin curing agent of the present invention, (C) filler, and other optional components (including organic solvents) of the present invention are mixed to prepare a liquid resin composition solution, The resin composition solution is applied to the protective layer (release film) using a reverse roll coater, a comma coater, or the like. The protective layer coated with the resin composition solution is passed through an in-line dryer, dried by removing the organic solvent at 80 to 160° C. for 2 to 20 minutes, and then a separate protective layer (protective film) using a roll laminator. By over-pressing and laminating, the resin film formed by forming a film of the resin composition of the present invention can be obtained.

In addition, in this invention, a "release film" is a film to which the resin composition of this invention is coated, and means peeling from the resin composition layer formed from the resin composition of this invention later. In addition, the "protective film" refers to a film for protecting by covering a resin composition layer formed on a release film.

In addition, although there is no restriction|limiting in particular as said compression bonding condition, it is preferable to laminate at a temperature of 50 to 100°C, a linear pressure of 0.5 to 5 kgf/cm, and a speed of 0.1 to 5 m/min.

In addition, by coating the resin composition of the present invention on a release film as a separate form, two or more resin-forming films having a resin composition layer on the release film are prepared and prepared, and the two or more resin-forming films are mutually A composite resin film including multiple layers can be produced by overlapping the resin composition layers.

In addition, in this case, at least one of the prepared resin-forming films is formed as a resin-forming film in which the resin composition layer and a protective film for protecting the resin composition layer are sequentially formed on the release film, and the resin-forming films are mutually It is preferable to perform overlapping of the resin composition layers by removing the protective film or the release film so that the resin composition layers to be laminated to each other are exposed from the resin-forming film, and overlapping the exposed resin composition layers.

In this way, by removing any one of the protective layers from the laminate including the resin-forming film, that is, the protective layer (release film)/resin film/protective layer (protective film), and bonding the remaining resin film/protective layers to each other, the second layer A resin film in which the above resins are directly laminated can be obtained, and by repeating this, a laminate including a multilayered resin film can be obtained, and a resin film including 2 to 4 layers is preferable in the present invention. At the time of lamination, it is preferable to laminate the films while heating at 30 to 120°C.

Protective film / peeling film (protective layer)

The protective film for protecting the resin film (resin composition layer) or the release film to which the resin composition solution is applied is not particularly limited as long as it can be peeled without damaging the shape of the resin film containing the resin composition of the present invention. , It is used as a protective film and a release film for wafers, and generally, plastic films such as polyethylene (PE) film, polypropylene (PP) film, polymethylpentene (TPX) film, and polyester film subjected to release treatment are mentioned. have. Further, the peel force is preferably 50 to 300 mN/min, and the thickness is 25 to 100 μm, preferably 38 to 75 μm.

(Wafer to be molded)

The wafer to be molded collectively by the resin film of the present invention is not particularly limited, but a wafer having semiconductor elements (chips) mounted on the surface thereof may be used, or a semiconductor wafer having semiconductor elements formed on the surface thereof may be used. The resin film of the present invention has good filling properties to the wafer surface before molding, and has low warpage properties after molding, and is excellent in protection properties of such wafers. In addition, the resin film of the present invention is not particularly limited, but is suitably used to mold a large-diameter wafer or thin-film wafer of 8 inches (200 mm) or more in diameter, for example, 8 inches (200 mm) and 12 inches (300 mm) in diameter. I can. In addition, as a thin wafer, it is preferable to use it for a wafer thinly processed to a thickness of 5 to 300 µm.

(Wafer Molding Method)

Although it does not specifically limit about the molding method of the wafer using the resin film of this invention, For example, one protective layer pasted on the resin film is peeled, and as shown in FIG. A method of attaching to the circuit area so as to mold the circuit surface of (Fig. 1(A)) or a method of collectively attaching onto the wafer 2 so that the entire wafer 2 is covered (Fig. 1(B) )). For example, using a vacuum laminator (product name: TEAM-100RF) manufactured by Takatori Co., Ltd., the vacuum chamber is set to a degree of vacuum of 50 to 1,000 Pa, preferably 50 to 500 Pa, for example, 100 Pa, and 80 to 200 ℃, preferably 80 to 130 ℃, for example, a resin film with the other protective layer attached to the wafer is collectively adhered to the wafer, and after returning to normal pressure, the wafer is cooled to room temperature and removed from the vacuum laminator. It can be carried out by taking out and peeling off the other protective layer. Thereafter, the resin film may be cured by heating at 120 to 220° C. for 15 to 180 minutes.

<Semiconductor device>

In addition, the present invention provides a semiconductor device having a heat-cured film in which a semiconductor wafer molded with a heat-cured film obtained by heat-curing the resin film is individually formed. The molded wafer is attached to a protective tape for semiconductor processing such as a dicing tape so that the mold resin surface or the wafer surface is in contact, and is installed on a suction table of a dicer, and the molded wafer is a dicing saw ( For example, manufactured by DISCO, DFD6361) is used. Spindle rotation speed and cutting speed at the time of dicing may be appropriately selected, but usually the spindle rotation speed is 25,000 to 45,000 rpm, and the cutting speed is 10 to 50 mm/sec. In addition, the size to be divided varies depending on the design of the semiconductor package, but is approximately 2 mm x 2 mm to 30 mm x 30 mm.

A semiconductor device obtained by dicing a wafer with little warpage and sufficiently protected by the present invention into pieces by dicing using a dicing blade or the like becomes a high-quality semiconductor device with good yield.

<Method of manufacturing semiconductor device>

In addition, in the present invention, manufacturing of a semiconductor device, comprising a step of attaching the resin film of the present invention to a semiconductor wafer, and molding the semiconductor wafer into the resin film, and a step of separating the molded semiconductor wafer into pieces. Provides a way.

Specifically, for example, one protective layer of a resin film having protective layers on both sides is peeled from the resin film, the exposed resin film is attached to the surface of the semiconductor wafer, and the other protective layer is peeled from the resin film, and the resin A method of molding a semiconductor wafer with a film and separating the molded semiconductor wafer into pieces is mentioned.

[Example]

Hereinafter, synthesis examples, examples and comparative examples are shown to further describe the present invention, but the present invention is not limited to the following examples.

In the following synthesis examples, the weight average molecular weight of each polymer was analyzed using a GPC column TSKgel Super HZM-H (manufactured by Tosoh Corporation), a flow rate of 0.6 milliliters/minute, an elution solvent tetrahydrofuran, and a column temperature of 40°C. It was measured by gel permeation chromatography (GPC) using monodisperse polystyrene as a standard.

The compounds used in the synthesis examples and comparative synthesis examples are shown below.

(Synthesis Example 1)

84.1 g (0.20 mol) of the compound represented by the formula (S-1) and 66.3 g (0.25 mol) of the compound represented by the formula (S-2) in a 3 L flask equipped with a stirrer, thermometer, nitrogen replacement device, and reflux condenser ), 28.5 g (0.05 mol) of the compound represented by the above formula (S-3) was added, and then 2,000 g of toluene was added, followed by heating to 70°C. Thereafter, 1.0 g of a toluene chloroplatinic acid solution (platinum concentration 0.5% by mass) was added, and 58.3 g (0.30 mol) of the compound represented by the above formula (S-5) and the compound represented by the above formula (S-6) ( y=40) 553 g (0.20 moles) was added dropwise over 1 hour (total number of moles of hydrosilyl group/total number of moles of alkenyl group=1/1, silicon content of 70.0 mass%, and number of moles e of S-3 as 1) In the case, the mole number c of S-1, the mole number d of S-2 were c+d=9, and the mole number f of S-4 was f=0). After completion of the dropwise addition, the product was heated to 100°C and aged for 6 hours, and then the product obtained by distilling off toluene from the reaction solution under reduced pressure was 45,000 in terms of polystyrene as measured by GPC. The obtained resin was used as resin (1), and was provided in Examples and Comparative Examples.

(Synthesis Example 2)

44.1 g (0.167 mol) of the compound represented by the formula (S-2) and 94.9 g (0.167 mol) of the compound represented by the formula (S-3) in a 3 L flask equipped with a stirrer, thermometer, nitrogen substitution device, and reflux condenser ), after the addition of 31.0 g (0.167 mol) of the compound represented by the above formula (S-4), 2,000 g of toluene was added, followed by heating to 70°C. Thereafter, 1.0 g of a toluene chloroplatinic acid solution (platinum concentration 0.5% by mass) was added, and 58.3 g (0.30 mol) of the compound represented by the above formula (S-5) and the compound represented by the above formula (S-6) ( y=10) 141 g (0.20 moles) was added dropwise over 1 hour (total number of moles of hydrosilyl group/total number of moles of alkenyl group=1/1, silicon content of 46.6% by mass, and number of moles e of S-3 as 1) Case, c+d=1, f=1). After completion of the dropwise addition, the product was heated to 100°C and aged for 6 hours, and then the product obtained by distilling off toluene from the reaction solution under reduced pressure was 41,000 in terms of polystyrene as measured by GPC. The obtained resin was used as the resin (2), and was provided in Examples.

(Synthesis Example 3)

84.1 g (0.20 mol) of the compound represented by the above formula (S-1), 53.0 g (0.20 mol) of the compound represented by the above formula (S-2) in a 3L flask equipped with a stirrer, thermometer, nitrogen substitution device, and reflux condenser ), 28.5 g (0.05 mol) of the compound represented by the formula (S-3), and 9.3 g (0.05 mol) of the compound represented by the formula (S-4) were added, followed by adding 2,000 g of toluene, and 70 Warmed to °C. Thereafter, 1.0 g of a toluene chloroplatinic acid solution (platinum concentration 0.5% by mass) was added, and 58.3 g (0.30 mol) of the compound represented by the above formula (S-5) and the compound represented by the above formula (S-6) ( y=20) 317 g (0.20 moles) was added dropwise over 1 hour (total number of moles of hydrosilyl group/total number of moles of alkenyl group = 1/1, silicon content of 59.3% by mass, and number of moles e of S-3 as 1) Case, c+d=8, f=1). After completion of the dropwise addition, the product was heated to 100°C and aged for 6 hours, and then the product obtained by distilling off toluene from the reaction solution under reduced pressure was 43,000 in terms of polystyrene as measured by GPC. The obtained resin was used as Resin (3), and was provided in Examples.

(Synthesis Example 4)

66.3 g (0.25 mol) of the compound represented by the formula (S-2) and 143 g (0.25 mol) of the compound represented by the formula (S-3) in a 3 L flask equipped with a stirrer, thermometer, nitrogen substitution device, and reflux condenser. After addition, 2,000 g of toluene was added, and the mixture was heated to 70°C. Thereafter, 1.0 g of a toluene chloroplatinic acid solution (platinum concentration 0.5% by mass) was added, and 58.3 g (0.30 mol) of the compound represented by the above formula (S-5) and the compound represented by the above formula (S-6) ( y=40) 553 g (0.20 mol) was added dropwise over 1 hour (total number of moles of hydrosilyl group/total number of moles of alkenyl group=1/1, silicon content of 67.4% by mass, and number of moles e of S-3 as 1) Case, c+d=1, f=0). After completion of the dropwise addition, the product was heated to 100°C and aged for 6 hours, and then the product obtained by distilling off toluene under reduced pressure from the reaction solution had a weight average molecular weight of 39,000 in terms of polystyrene measured by GPC. The obtained resin was used as Resin (4), and it was provided in Examples.

(Comparative Synthesis Example 1)

After adding 210 g (0.50 mol) of a compound represented by the formula (S-1) in a 3L flask equipped with a stirrer, thermometer, nitrogen replacement device, and reflux condenser, 2,000 g of toluene was added, followed by heating to 70°C. Thereafter, 1.0 g of a toluene chloroplatinic acid solution (platinum concentration 0.5% by mass) was added, and 58.3 g (0.30 mol) of the compound represented by the above formula (S-5) and the compound represented by the above formula (S-6) ( y=40) 553 g (0.20 mol) was added dropwise over 1 hour (total number of moles of hydrosilyl group/total number of moles of alkenyl group=1/1, silicon content of 67.3% by mass, S- 3 moles e=0). After completion of the dropwise addition, the product was heated to 100°C and aged for 6 hours, and then the product obtained by distilling off toluene from the reaction solution under reduced pressure was 42,000 in terms of polystyrene as measured by GPC. The obtained resin was used as Resin (5), and was provided in Comparative Examples.

(Comparative Synthesis Example 2)

28.5 g (0.05 mol) of the compound represented by the formula (S-3) and 194 g (0.45 mol) of the compound represented by the formula (S-7) in a 3 L flask equipped with a stirrer, thermometer, nitrogen substitution device and reflux condenser After addition, 2,000 g of toluene was added, followed by heating to 70°C. Thereafter, 1.0 g of a toluene chloroplatinic acid solution (platinum concentration 0.5% by mass) was added, and 58.3 g (0.30 mol) of the compound represented by the above formula (S-5) and the compound represented by the above formula (S-6) ( y = 40) 553 g (0.20 mol) was added dropwise over 1 hour (total number of moles of hydrosilyl group/total number of moles of alkenyl group = 1/1, silicon content of 66.4 mass%, and number of S-3 moles as 1) If c+d=0, f=0). After completion of the dropwise addition, the product was heated to 100°C and aged for 6 hours, and then the product obtained by distilling off toluene from the reaction solution under reduced pressure was 45,000 in terms of polystyrene as measured by GPC. The obtained resin was used as the resin (6), and was provided in a comparative example.

<Preparation of resin composition>

(Examples 1-1 to 1-6)

In the composition shown in Table 1 below, (A) the silicone resin synthesized in Synthesis Examples 1 to 4 (the resins (1) to (4)), (B) an epoxy resin curing agent, an epoxy resin curing accelerator, (C) a filler And optional ingredients were combined. In addition, cyclopentanone in an amount such that the solid component concentration was 75% by mass was added, stirred using a ball mill, mixed, dissolved and dispersed to prepare a dispersion of the resin composition (Examples 1-1 to 1-6). . In addition, the unit of the numerical value indicating the compounding amount in Table 1 is "parts by mass".

(Comparative Examples 1-1 to 1-3)

In addition, Comparative Example 1-1 does not contain the essential unit of the silicone resin (A) in the present invention (the unit represented by the formula (4)), and is different from the silicone resin (A) in the present invention. As a resin composition containing a resin (the resin (5)), it is a composition that does not satisfy the requirements of the present invention. Comparative Example 1-2 is a resin composition containing a silicone resin (the resin (6)) different from the silicone resin (A) in the present invention, and is a composition that does not satisfy the requirements of the present invention. Comparative Example 1-3 is a composition containing the silicone resin (A) in the present invention, but is a composition that does not contain a filler (C) and does not satisfy the requirements of the present invention.

Each component used for production of a resin composition is shown below.

(B) Epoxy resin curing agent

Phenolite TD-2093 (manufactured by DIC Corporation, phenol novolak resin, OH equivalent: 98 to 102)

Likaside HH (brand name) (manufactured by Shin-Nippon Rica Co., Ltd., hexahydrophthalic anhydride, molecular weight: 154)

In addition, the epoxy resin curing accelerator shown below was used.

Epoxy Resin Curing Accelerator:

Cursol 2P4MHZ (brand name) (manufactured by Shikoku Chemical Industry Co., Ltd., 2-phenyl-4-methyl-5-hydroxymethylimidazole)

(C) filler

Silica (manufactured by Admatex Co., Ltd., average particle diameter 5.0㎛)

Other ingredients

EOCN-103S (brand name) (Epoxy resin manufactured by Nippon Kayaku Co., Ltd., epoxy equivalent: 209 to 219)

Here, the epoxy equivalent means the equivalent of an epoxy group per molecule of each component.

[Production of resin film]

The release film and the protective film used for production of a resin film are shown below.

Release film (1): E7304 (Toyoboseki Co., Ltd. polyester, thickness 75 μm, peel force 200 mN/50 mm)

Release film (2): E7302 (Toyoboseki Co., Ltd. polyester, thickness 75㎛, peeling force 90mN/50mm)

Protective film: polyethylene film (100㎛)

(Example 2-1)

A die coater was used as a film coater, and the resin composition shown in Example 1-1 in Table 1 was applied onto the release film using E7304 as the release film (1). Subsequently, a resin film having a thickness of 100 μm was formed on the release film 1 by passing through a hot air circulation oven (length 4 m) set at 100° C. for 5 minutes.

Next, a polyethylene film (thickness 100 µm) was bonded from the top of the resin film at a line pressure of 10 N/cm using a laminate roll to prepare a release film (1)/resin film/layer film (1) including a protective film.

In addition, in place of the release film (1), the laminated film (2) including the release film (2)/resin film/protective film was produced in the same manner as above except that E7302 was used as the release film (2).

Further, the respective polyethylene films (protective films) of the obtained laminated films (1) and (2) were removed, the resin films were overlapped, and put into a heat roll laminator heated to 60°C, and the film thickness was 200 μm. A composite film including a release film (1)/resin film/release film (2) having a resin film was produced.

(Examples 2-2 to 2-6, Comparative Examples 2-1 to 2-3)

Resin having a film thickness of 200 μm using the resin composition prepared in Examples 1-2 to 1-4, Examples 1-6, and Comparative Examples 1-1 to 1-3 in the same manner as in Example 2-1 A composite film having a film was prepared (Examples 2-2 to 2-4, Examples 2-6, and Comparative Examples 2-1 to 2-3). Moreover, in Example 2-5, the resin composition of Example 1-5 which is the same resin composition as Example 1-4 was used, and the resin film with a film thickness of 500 micrometers was produced.

[Mold of resin film into wafer]

A silicon wafer having a wafer thickness of 100 μm and a diameter of 12 inches (300 mm) was prepared. The release film (2) was peeled from the composite films prepared in Examples 2-1 to 2-6 and Comparative Examples 2-1 to 2-3, and a vacuum laminator (manufactured by Takatori Co., Ltd., product name: TEAM-300M ) Was used to set the inside of the vacuum chamber to a vacuum degree of 250Pa, and a resin film was collectively attached to the silicon wafer at 110°C. After returning to normal pressure, the silicon wafer was cooled to 25° C., taken out from the vacuum laminator, and the remaining peeling film (1) was peeled off. The obtained wafer with a resin film was heated in an inner oven at 180° C. for 2 hours to cure the resin.

[Evaluation 1: Wafer Warpage Amount]

The amount of wafer warpage after curing the resin film was measured with a laser (manufactured by Toho Technology Co., Ltd., FLX-3300-T), and the obtained values are shown in Table 2. In addition, when the amount of warpage is large and cannot be measured with this device, the value measured using a regular (JIS Class 1) is shown.

[Evaluation 2: Wafer Supportability]

The wafer support property is shown in Table 2, by measuring the amount of warpage of the wafer when the end of the wafer is supported, and determining that within 20 mm is good, and when it exceeds 20 mm is determined to be defective.

[Evaluation 3: Adhesion]

Each resin film was subjected to a vacuum film laminator (temperature: 100°C, pressure: 100Pa, TEAM-100, manufactured by Takatori Co., Ltd.), and a 6-inch (150 mm) diameter semiconductor wafer (thickness: 625 μm, Shin-Etsu Chemical Co. ) Manufacturing). Subsequently, a dicing saw (DAD685, manufactured by DISCO) equipped with a dicing blade was used to cut into a square size of 2 mm x 2 mm. A 2 mm x 2 mm square chip was bonded on a separately prepared 15 mm x 15 mm square silicon wafer (base substrate) with a resin film interposed therebetween at 150° C. and a load of 50 mN. Then, it heated at 180 degreeC for 2 hours, and the resin film was hardened, and the test piece was obtained. Each of five test pieces was prepared, and it was provided for the following adhesion measurement test.

A bond tester (Dage series 4000-PXY: manufactured by Dage) was used to measure the resistance applied when a semiconductor chip (2 mm × 2 mm) is peeled from the base substrate (a square silicon wafer of 15 mm × 15 mm), and the resin film layer The adhesion of the was evaluated. Test conditions were carried out at a test speed of 200 µm/sec and a test height of 50 µm. Table 2 shows the results. The numerical values shown in Table 2 are the average of the measured values for each of the five test pieces, and the higher the numerical value, the higher the adhesive strength of the adhesive sheet.

[Evaluation 4: Reliability]

The cured wafer with a resin film was subjected to a dicing saw (DAD685, manufactured by DISCO, Inc., a spindle rotation speed of 40,000 rpm, and a cutting speed of 20 mm/sec) to obtain a square test piece of 10 mm×10 mm. The obtained test pieces (10 pieces each) were subjected to a heat cycle test (holding at -25°C for 10 minutes and holding at 125°C for 10 minutes repeated 1,000 cycles), and the peeling state of the resin film from the wafer after the heat cycle test was confirmed. I did. Table 2 shows the results of determining that the peeling did not occur at all is good, and that even one that caused peeling is judged as defective.

[Evaluation 5: heat resistance]

The pre-test mass of the test piece produced in Evaluation 4 was measured, and after that, the test piece was left in an oven heated to 200° C. for 1000 hours, and then the test piece was taken out from the oven, and the mass after the test was measured. Table 2 shows the results of determining that the mass change rate before and after the test is less than 0.5 mass% is good, and the case where the mass change rate before and after the test is 0.5 mass% or more is defective.

As a result of the above, the resin films (Examples 2-1 to 2-6) obtained from the resin composition of the present invention had less warpage of the wafer compared to the resin films of Comparative Examples 2-1 to 2-3, and wafer support and adhesion. , It was found to be excellent in reliability and heat resistance.

As described above, since the resin composition of the present invention can be formed in a film shape, the wafers can be collectively molded (wafer molded), and it has been shown that it has good moldability for large-diameter, thin-film wafers. In addition, it was shown that the resin film obtained from the resin composition of the present invention was excellent in low warpability and wafer protection, and was also excellent in adhesion, reliability, and heat resistance.

In addition, this invention is not limited to the said embodiment. The above-described embodiment is an example, and anything that has substantially the same configuration as the technical idea described in the claims of the present invention, and exhibits the same operation and effect is included in the technical scope of the present invention.

1: resin film
2: wafer

Claims (12)

Silicone resin (A) having a weight average molecular weight of 3,000 to 500,000 having a structural unit represented by the following composition formula (1),

[In the formula, R ¹ to R ⁴ each independently represent a monovalent hydrocarbon group having 1 to 8 carbon atoms, provided that R ³ and R ⁴ are not at the same time a methyl group, and m and n are each independently 0 to 300 Is an integer, a and b are both positive numbers, a+b=1, and X is each independently represented by a divalent group selected from the group of the following formulas (2), (3), (4) and (5) Is a linking group, and the number of moles of the unit represented by the following formula (2) contained in the silicone resin (A) is c, the number of moles of the unit represented by the following formula (3) is d, the number of units represented by the following formula (4) When the number of moles is e and the number of moles of the unit represented by the following formula (5) is f, e is a positive number, c, d and f are each 0 or a positive number, c+d+e+f/silicone resin (A) In the case of satisfying the number of moles of the linking group represented by X contained in = 1, and e = 1, c + d = 1 to 10, f = 0 to 1.

(Wherein, V is

Is a divalent organic group selected from any one of, p is 0 or 1, and R ⁵ represents a hydrogen atom or a methyl group, g is an integer of 0 to 7, and R ⁶ and R ⁷ each independently have 1 carbon number It is an alkyl group or an alkoxy group of 4 to, and may be different or the same as each other, and h is any one of 0, 1 and 2)

(In the formula, R ⁸ represents a hydrogen atom or a methyl group, q is an integer of 0 to 7)

(Wherein, Y is

A divalent group selected from any one of (in the formula, R each independently represents a hydrogen atom or a methyl group), and R ⁹ and R ¹⁰ each independently represent a hydrogen atom or a methyl group)

(In the formula, R ¹² and R ¹³ each independently represent a monovalent hydrocarbon group having 1 to 8 carbon atoms, provided that R ¹² and R ¹³ are not at the same time a methyl group, and r and s are each independently 0 to 300 Is an integer of, and R ¹¹ represents a hydrogen atom or a methyl group, and k is an integer of 0 to 7)]
(B) an epoxy resin curing agent, and
(C) filler
Contains,
A resin composition, wherein the amount of the component (B) is 5 to 50 parts by mass based on 100 parts by mass of the component (A), and the mass fraction of the component (C) with respect to the total mass is 50 to 95% by mass. . The resin composition according to claim 1, wherein the component (B) is an epoxy resin curing agent of any one of amine-based, phenol-based and acid anhydride-based epoxy resin curing agents. The resin composition according to claim 1 or 2, wherein the number of moles d of the unit represented by the formula (3) contained in the silicone resin (A) is a positive number. The resin composition according to claim 1 or 2, further comprising an epoxy resin curing accelerator. The resin composition according to claim 1 or 2, further comprising an epoxy resin other than the component (A). The resin composition according to claim 1 or 2, wherein the component (C) is silica. A resin film, characterized in that the resin composition of claim 1 or 2 is formed into a film. By coating the resin composition of claim 1 or 2 on a release film, two or more resin-forming films having a resin composition layer on the release film are prepared and prepared,
A method for producing a resin film, wherein the resin composition layers of the two or more resin-forming films are overlapped. The method according to claim 8, wherein at least one of the prepared resin-forming films is a resin-forming film in which the resin composition layer and a protective film for protecting the resin composition layer are sequentially formed on the release film,
The protective film or the release film is removed so that the resin composition layers to be laminated are exposed from the resin-forming film to overlap the resin composition layers with each other, and the exposed resin composition layers are overlapped with each other. The manufacturing method of a resin film characterized by performing by doing. A method for manufacturing a semiconductor device, comprising: a step of attaching the resin film of claim 7 to a semiconductor wafer, and molding the semiconductor wafer into the resin film; and a step of separating the molded semiconductor wafer into pieces. A semiconductor device, characterized in that the semiconductor wafer molded with the heat-cured film of the resin film of claim 7 is individually formed. delete

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