KR102252979B1 - Terminal connecting method of ceramic heater for semiconductor - Google Patents

Abstract

The present invention relates to a terminal bonding method of a ceramic heater for a semiconductor with high reliability. More specifically, the terminal bonding method of the ceramic heater for the semiconductor with high reliability comprises: a step of preparing a substrate (10) with a heat generator circuit (20); a step of mounting a terminal (40) on the prepared substrate (10) along with a filler metal (30); and a step of inputting the substrate (10) with the terminal (40) mounted into a brazing furnace and brazing the substrate (10) at a temperature of 600-700℃, thereby bonding the terminal (40). The filler metal (30) includes aluminum. In addition, according to the present invention, the jig (100) is mounted before brazing and includes: a jig mainframe (110); one or more terminal insertion holes (120) formed on the jig mainframe (110); a load member (130) settled on an upper surface of the jig mainframe (100) at a position corresponding to the terminal insertion hole (120); one or more penetrating holes (140) formed on a part without the terminal insertion hole (120) of the jig mainframe (110); and one or more parting members (151) protruding from a lower surface on an edge of the jig mainframe (110) to, when mounted on the substrate (10), part the jig mainframe (110) from the substrate (10) and form a space unit (S) between the jig mainframe (110) and the substrate (10). According to the present invention, the terminal has an excellent bonding strength, and there is no growth and void of compounds between metals due to deterioration. In addition, the wettability is superior, so the present invention has high reliability.

Description

Terminal connecting method of ceramic heater for semiconductor with high reliability {Terminal connecting method of ceramic heater for semiconductor}

The present invention relates to a terminal bonding method of a ceramic heater for semiconductors having high reliability, and more particularly, by brazing the terminal at a low temperature using a filler material containing aluminum, the bonding strength is excellent, and the heating element circuit and the insulating film are damaged. There is no growth of intermetallic compounds due to deterioration and no voids, and the present invention relates to a terminal bonding method of a ceramic heater for semiconductors having high reliability with excellent wettability.

In general, ceramic heaters for semiconductors include a ceramic substrate 10, a heating element circuit 20 formed on the ceramic substrate, a terminal 40 bonded to the heating element circuit 20, and the heating element circuit 20 as shown in FIG. 1. ) Is composed of an insulating film 50 formed on the remaining portions except for the portion to which the terminal 40 is bonded. In addition, the heating element circuit 20 and the terminal 40 are joined by a filler material 30.

Since such a ceramic heater for semiconductors maintains temperature stability and needs to transfer heat uniformly, maintaining the quality of the heating element circuit 20 or the power supply unit is a very important factor. In particular, failure types of ceramic heaters for semiconductors include power off, poor operation of the heat sink, or failure types for which the cause of the failure is not known, but among them, disconnection of the power supply terminal occupies the most part. , It is important to bond the ceramic substrate 10 on which the heating element circuit 20 is formed and the terminal 40 to have high reliability.

Currently, as a method for bonding the terminal 40 to the ceramic substrate 10 on which the heating element circuit 20 is formed, a soldering method is used. And as the filler material 30, Sn-Ag or Sn-Ag-Cu (SAC) is used.

However, such Sn-Ag or Sn-Ag-Cu (SAC) has low wettability and low ductility, and has a problem of lowering the reliability of solder joints due to deterioration characteristics. In particular, the filler material 30 such as Sn-Ag or Sn-Ag-Cu exhibits low reliability at high temperatures due to coarsening of particles. That is, in the filler material 30 used at high temperatures, a secondary phase, which is an intermetallic compound (IMC), is formed at the junction interface, and the growth of intermetallic compounds and the formation of voids due to deterioration cause micro cracks. It acts as a factor that can occur, and can show the form of brittle fracture due to crack expansion and arc generation. In addition, wettability decreases during the reflow process, and a large amount of voids exist in the joint after soldering due to oxidation of the surface of the terminal 40, and a high void fraction increases the initial bonding strength between the terminal 40 and the circuit 20. In consideration of the high-temperature use environment, there is a problem in that the mechanical properties of the joint portion are deteriorated as the use time increases, thereby causing a decrease in the durability life.

In order to improve the disadvantages of this soldering method, Korean Patent Registration No. 10-1579885 proposes a method of bonding terminals by brazing at a temperature range of 800 to 850°C using an Ag-Cu filler material. However, in this method, the brazing temperature is too high, so that the resistance value of the heating element circuit 20 around the terminal 40 is changed, and the insulating film 50 is damaged.

KR 10-1579885 B1

Accordingly, an object of the present invention is to solve all the problems of the conventional terminal bonding method, by brazing the terminal on the heating element circuit at low temperature using a filler material composed of aluminum and bonding it to the surrounding heating element circuit and the insulating film. Provides a terminal bonding method for ceramic heaters for semiconductors with no damage, no change in resistance value, no growth of intermetallic compounds due to deterioration and no voids, excellent wettability and high reliability with excellent bonding strength. Have.

The terminal bonding method of a ceramic heater for semiconductors having high reliability of the present invention for achieving the above object includes the steps of preparing a substrate on which a heating element circuit is formed, mounting a terminal on the prepared substrate together with a filler material, and the Including the step of bonding the terminals by putting the terminal-mounted substrate into a brazing furnace and brazing at a temperature of 600 to 700°C, wherein the filler material comprises aluminum.

The filler material is characterized in that the solidus (solius) is 500 ~ 550 ℃, the liquidus (liquidus) 600 ~ 650 ℃.

The filler material is copper (Cu) 5 to 10 wt%, manganese (Mn) 0.1 to 0.5 wt%, silicon (Si) 0.1 to 0.5 wt%, titanium (Ti), zirconium (Zr), niobium (Nb), hafnium ( It is characterized in that 0.1 to 0.5 wt% of at least one of Hf) and tantalum (Ta) and the balance of aluminum.

The brazing is ^{performed at a high vacuum degree of 10 -5} Torr or less, and the temperature of the brazing furnace is adjusted in the first to third steps, but the first step is heated at a rate of 3 to 5°C/min to 150 to 250°C. At a rate of 10 to 30 minutes, the second step is heated at a rate of 5 to 10°C/min and maintained at 500 to 600°C for 10 to 30 minutes, and the third step is heated at a rate of 3 to 5°C/min. It is characterized in that it is maintained for 10 to 30 minutes at 600 to 700 °C.

It further comprises cooling the substrate to which the terminals are bonded, wherein the cooling is characterized in that the substrate to which the terminals are bonded is naturally cooled to 200°C, and then purged with nitrogen or argon gas to room temperature. .

Before inserting the terminal-mounted substrate into the brazing furnace, a jig is mounted on the terminal-mounted substrate.

The jig includes a jig body; One or more terminal insertion holes formed in the jig body; A load member seated at a position corresponding to the terminal insertion hole on the upper surface of the jig body; At least one through hole formed in a portion of the jig body in which the terminal insertion hole is not formed; And a spacer member protruding one or more on the lower surface of the edge of the jig main body to separate the jig main body from the substrate when mounted on the substrate to form a space between the jig main body and the substrate.

At least one extension part extending in a horizontal direction is formed in the jig body, and the spacer member is formed on a lower surface of the extension part.

The load member has a protrusion formed on a lower surface thereof, and the protrusion is inserted into the upper side of the terminal insertion hole, and when mounted on the substrate, the upper portion of the terminal mounted on the substrate is inserted into the lower side of the terminal insertion hole. It is characterized in that pressure is applied to the terminal.

The material of the jig is characterized in that aluminum oxide.

According to the terminal bonding method of a ceramic heater for semiconductors having high reliability of the present invention, the bonding strength of the terminals is excellent, there is no growth of intermetallic compounds due to deterioration and no voids, and excellent wettability has high reliability. There is an advantage.

1 is a schematic diagram of a typical ceramic heater.
2 is a perspective view of a jig according to the present invention.
3 is a perspective view showing a state in which the load member of the jig is separated according to the present invention.
4 is a cross-sectional view taken along line AA of FIG. 2.
5 is a perspective view showing a state in which a jig according to the present invention is mounted on a substrate.
6 is a cross-sectional view taken along line BB of FIG. 5.
7 is a photograph of terminal bonding according to Example 1 of the present invention.
8 is a photograph showing the results of the X-ray non-destructive test according to Test Example 1 of the present invention.

Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

First, the basic configuration of the ceramic heater for semiconductor according to the present invention is the same as in the prior art, as shown in FIG. 1, a ceramic substrate 10, a heating element circuit 20 formed on the ceramic substrate 10, and the heating element circuit ( It is composed of a terminal 40 bonded to 20) and an insulating film 50 formed on the remaining portions except for a portion to which the terminal 40 on the heating element circuit 20 is bonded. Here, the terminal 40 and the heating element circuit 30 are joined by a filler material 30, and the present invention relates to a method of bonding the terminal 40 and the heating element circuit 20 by a filler material 30. It has a characteristic.

The terminal bonding method of a ceramic heater for semiconductors having high reliability according to the present invention includes the steps of preparing the substrate 10 on which the heating element circuit 20 is formed, and attaching the terminal 40 to the prepared substrate 10 as a filler material 30. ) And attaching the terminal 40 by inserting the substrate 10 on which the terminal 40 is mounted into a brazing furnace and brazing at a temperature of 600 to 700°C, wherein the filler material It is characterized in that it contains aluminum.

This will be described in detail step by step.

Preparing the substrate 10 on which the heating element circuit 20 is formed

First, a substrate 10 on which the heating element circuit 20 is formed is prepared.

Here, the substrate 20 refers to an aluminum nitride (AlN) substrate that is generally used in the related art, and the aluminum nitride is most often used because it has good thermal conductivity and high insulation.

In addition, the heating element circuit 20 can be formed on the substrate 10 in two ways, and is formed by plating a compound containing Ni and then etching, or printing an Ag-based material in the form of a paste. It is to do. In the present invention, as described above, the configuration of the substrate 10 and the heating element circuit 20 is according to the prior art, and the method is not limited thereto. In addition, since the insulating film 50 is formed on the surface of the heating element circuit 20 to which the terminals 40 are not bonded, the configuration of the insulating film 50 and a method of forming the insulating film 50 are also according to the prior art. In addition, if necessary, the heating element circuit 20 may be additionally plated or surface-treated, and this is not limited as long as it is also according to the prior art.

However, when the substrate 10 on which the final nickel-plated heating element circuit 20 is formed is used, the bonding strength of the terminals is slightly increased, but the use thereof is not limited.

Mounting the terminal 40 together with the filler material 30 on the prepared substrate 10

Next, the terminal 30 is mounted together with the filler material 30 on the prepared substrate 10. That is, the terminal 30 is mounted on the heating element circuit 20 of the substrate 10.

The present invention is characterized in that low-temperature brazing is possible by using the filler material 30 based on aluminum, not the conventional Sn-Ag, Sn-Ag-Cu, or Ag-Cu filler material as the filler material 30. . That is, the filler material 30 according to the present invention is based on aluminum, and the solius is 500 to 550°C, and the liquidus is 600 to 650°C, so that low-temperature brazing is possible. will be.

More specifically, the filler material 30 according to the present invention is copper (Cu) 5 to 10 wt%, manganese (Mn) 0.1 to 0.5 wt%, silicon (Si) 0.1 to 0.5 wt%, titanium (Ti), zirconium (Zr ), niobium (Nb), hafnium (Hf), and tantalum (Ta) of at least 0.1 to 0.5 wt% and the balance of aluminum is preferably used. Here, the aluminum, copper, etc. segregate at the center to form a soft layer, thereby exhibiting a stress relaxation effect to improve the bonding strength of the terminals, and the melting point is also high, so that there is no deformation or growth of the intermetallic compound (IMC) layer. In addition, manganese, silicon, titanium, zirconium, niobium, hafnium, tantalum, and the like have characteristics that improve bonding strength due to good intermetallic affinity and bonding with ceramics, and are suitable as a filler material 30 for low-temperature brazing. At this time, when the component ratio of the filler material 30 is out of the above range, the solidus line and the liquidus line of the filler material 30 increase, so that low-temperature brazing is difficult and the bonding strength is also reduced, so it is preferable to use it within the above range. .

On the other hand, in the present invention, the filler material 30 is not limited in its form, such as a wire form, a sheet form, or a powder form. In the case of a wire form, the filler material 30 is supplied so as to surround the lower end of the terminal 40, and in the form of a sheet or powder. In this case, it is sufficient to supply so as to be interposed between the heating element circuit 20 and the terminal 40 and mount it together with the terminal 40, and this is not limited.

In addition, any of the terminals 40 may be used as long as they are according to the prior art, and a KOVAR terminal may be used as an example.

Joining the terminal 40 by putting the substrate 10 on which the terminal 40 is mounted into a brazing furnace and brazing at a temperature of 600 to 700°C

Next, the substrate 10 on which the terminal 40 is mounted is put into a brazing furnace, and the terminal 40 is bonded to the heating element circuit 20 by brazing at a temperature of 600 to 700°C.

As described above, when the brazing temperature is 800°C or higher, the bonding strength of the terminal 40 increases, but the resistance value of the heating element circuit 20 around the terminal 40 changes or damages the insulating film 50. Cause. That is, in order to minimize damage to the heating element circuit 20 and the insulating film 50, brazing should be performed at a temperature below the heat treatment temperature of the heating element circuit 20 and the insulating film 50, that is, less than 800°C. Therefore, the present invention uses the aluminum-based filler material 30 to contact the terminal 40 by brazing at a relatively low temperature of 600 to 700° C., thereby improving the bonding strength and not causing damage to the peripheral portion of the terminal 40. It is to do.

Most preferably, the brazing is to provide a holding time over three sections while raising the temperature of the brazing furnace. Specifically, the temperature of the brazing furnace is controlled in the first to third steps, but the first step of raising the temperature at a rate of 3 to 5°C/min and maintaining at 150 to 250°C for 10 to 30 minutes, and 5 to 10°C/ Adjust the temperature in the second step of raising the temperature at a rate of min and maintaining it at 500 to 600℃ for 10 to 30 minutes, and the third step of raising the temperature at a rate of 3 to 5℃/min and maintaining it at 600 to 700℃ for 10 to 30 minutes. .

The first step is a section for vaporizing and removing organic solvents and organic substances generated from the filler material 30, and the second step is to form a thermocouple of the product injected into the brazing furnace (the product itself reaches a set brazing temperature). , The stabilization section, and the third step is a section in which the filler material is melted to bond and fix the terminal 40. If the step is directly entered into the third step without the first step and the second step, the removal of organic solvents and organic matter is not sufficient. As a result, metal terminals and substrates are partially oxidized by organic gas, and thermocouples are not formed completely, resulting in a decrease in bonding strength of the terminals 40 and a decrease in wettability.

In addition, the brazing is ^{preferably performed at a high vacuum degree of 10 -5} Torr or less, exemplarily 10 ^-9 to 10 ^-5 Torr, in order to prevent oxidation of the metal.

After bonding the terminal 40 through brazing as described above, the step of cooling the substrate 10 to which the terminal 40 is bonded is further included.

The cooling is preferably not rapid cooling due to the difference in the coefficient of thermal expansion between ceramic and metal, and is preferably cooled naturally up to 200°C, and then purged with nitrogen or argon gas until room temperature, but is not limited thereto.

According to the bonding method of the present invention as described above, as well as excellent bonding strength of the terminals, there is an advantage in that there is no damage to the periphery, excellent wettability, and no occurrence of voids.

On the other hand, as described above, in order to maintain the life of the ceramic heater, it is very important to maintain the quality of the terminal 40. If the surface of the terminal 40 is floating or the bonding state (contamination, non-melting, etc.) is not good, cracks And it may generate an arc, and may cause a disconnection or a short circuit of the terminal.

Therefore, when the terminal 40 is bonded, the terminal 40 is mounted before the substrate 10 on which the terminal 40 is mounted is put into the brazing furnace in order to stably fix and bond the terminal 40. It is preferable to stably fix the terminal 40 to the substrate 10 by mounting the jig 100 on the substrate 10. At this time, it is possible to use a conventionally posted one as the jig 100, but more preferably it is to use the jig 100 presented below.

2 is a perspective view of a jig according to the present invention, FIG. 3 is a perspective view showing a state in which the load member of FIG. 2 is separated, and FIG. 4 is a cross-sectional view of FIG. 2 (the load member 130 is not in a cross-sectional state for ease of illustration. ) Is not shown).

The jig 100 includes a jig body 110; One or more terminal insertion holes 120 formed in the jig body 110; A load member 130 seated at a position corresponding to the terminal insertion hole 120 on the upper surface of the jig body 100; At least one through hole 140 formed in a portion of the jig body 110 in which the terminal insertion hole 120 is not formed; One or more protrusions are formed on the lower surface of the edge of the jig body 110 and when mounted on the substrate 10, the jig body 100 is spaced apart from the substrate 10 so that a space between the jig body 110 and the substrate 10 It characterized in that it includes; a spacer member 151 to form a portion (S).

In the present invention, it is preferable that the material of the jig 100 is aluminum oxide, because when graphite is used as in the prior art, there is a problem of contamination by particles.

2 to 3, the jig body 110 is in the form of a plate, and has a size and shape corresponding to that of the substrate 10, and a spacer 151 on the substrate 10 as shown in FIGS. 5 and 6 ) To be spaced apart from each other by a certain distance. The reason why the substrate 10 and the jig body 110 are mounted to be spaced apart is to provide a space for discharging the organic gas during brazing. That is, when the organic gas is discharged during the melting process of the filler material 30, if there is no space (S) between the substrate 10 and the jig body 110, there is no passage through which the organic gas is discharged, and the filler material 30 ) This is because there is a problem in that the surrounding contamination occurs severely and the exposed metal, that is, the corrosion and oxidation of the terminal and the substrate proceeds.

In addition, at least one terminal insertion hole 120 formed in the jig body 110 is formed at a position corresponding to the terminal of the substrate 10, and the shape and size thereof correspond to the terminal.

In addition, a load member 130 is seated at a position corresponding to the terminal insertion hole 120 on the upper surface of the jig body 100. The load member 130 is for increasing the bonding strength by applying pressure to the terminal 40, and for this purpose, a protrusion 131 is formed on the lower surface of the load member 130, and the protrusion 131 is the It is inserted above the terminal insertion hole 120. That is, as shown in FIG. 6, when the jig 100 is mounted on the substrate 10, the upper portion of the terminal 40 mounted on the substrate 10 is inserted under the terminal insertion hole 120, and the terminal insertion hole ( The protrusion 131 of the load member 130 is inserted on the upper side of the 120), and the pressure is applied to the terminal 40 by the load member 130 to improve the bonding strength. In addition, a through hole 132 may be formed in the load member 130 and the protrusion 131, and the lead portion of the terminal 20 is inserted, and this is not limited thereto.

In addition, at least one through hole 140 is formed in a portion of the jig body 110 in which the terminal insertion hole 120 is not formed. The through hole 140 serves to discharge the organic gas generated during the melting of the filler material 40 to the outside, and the organic gas discharged through the space S between the substrate 10 and the jig body 110 The gas is discharged to the outside of the jig 100 through the through hole 140.

One or more protrusions are formed on the lower surface of the edge of the jig body 110 and when mounted on the substrate 10, the jig body 100 is spaced apart from the substrate 10 so that a space between the jig body 110 and the substrate 10 A spacer member 151 is provided so that the portion S is formed.

That is, the spacer member 151 provides a space S between the substrate 10 and the jig body 110.

At this time, the jig body 110 is formed with at least one extension portion 150 extending in the horizontal direction, and the spacing member 151 is preferably formed on the lower surface of the extension portion 150, and the extension portion ( If there is no 150), the spacer member 151 is positioned on the substrate 10 so that the substrate 10 and the jig body 110 are difficult to be fixed. When formed, since the space between the spacers 151 becomes a size corresponding to the substrate 10, the substrate 10 is also fixed by the spacer members 151.

For the jig 100 according to the present invention, for lifting or bonding strength of the terminal 40, it is appropriate to have a surface flatness of 20 μm or less to be bonded to the terminal, and the load is 0.5 to 1.0 kg, but this is not limited. Does not.

In addition, although not shown or described separately, since the lower plate of the jig may be additionally provided, the substrate 10 is positioned on the lower plate of the jig, and the spacer member 151 is placed on the lower plate of the jig. ) To be detachably coupled through, but does not limit the further implementation thereof.

When the jig 100 is used as described above, the organic gas generated during the melting of the filler material 30 is easily discharged, and oxidation of the terminal 40, the substrate 10 and the heating element circuit 20 by the organic gas is prevented. In addition, there is an advantage in that pressure can be applied when the terminals 40 are joined, so that the bonding strength of the terminals 40 can be further improved.

Hereinafter, the present invention will be described in more detail through examples.

(Example 1)

The following base substrate, terminals, and filler materials were prepared, and the terminals and filler materials were mounted on the substrate, and then a jig made of aluminum oxide having the structure described above was mounted and brazed under the following brazing conditions. And it cooled at room temperature. 7 is a photograph of terminal formation after brazing.

Base substrate: AlN plate(Black)

Terminal: Ni+Au plating

Filler: Cu 5wt%, Mn 0.3wt%, Si 0.5wt, Ti 0.1wt%, Zr 0.1wt% and the balance Al (wire type)

Brazing conditions: 200℃(20min)->550℃(20min)->660℃(20min), 10 ^-6 Torr

(Comparative Example 1)

It was carried out in the same manner as in Example 1,

Ag-Cu-Ti was used as the filler material, and the brazing temperature was 820°C (30 min).

(Comparative Example 2)

It was carried out in the same manner as in Example 1, except that Sn-Cu-Ag was used as a filler material, and soldering was performed at 250°C (20 min) using soldering.

(Test Example 1)

In order to confirm the formation of voids in the product, an X-ray non-destructive test was performed, and the results are shown in FIG. 7.

As shown in FIG. 8, it was confirmed that a number of voids were generated in Comparative Example 1 and Comparative Example 2, and in Example 1 of the present invention, it was confirmed that there was no occurrence of voids at all.

(Test Example 2)

The shear strength of the product was tested. The shear strength test was carried out under the conditions of shear speed: 200㎛/s and shear height: 500㎛.

As a result, in Example 1, it was confirmed that the pad lift and the substrate base material were broken at 80 kgf, and in Comparative Example 1, the pad lift and the substrate base material were broken at 61 kgf and in Comparative Example 2 at 25 kgf.

Although the present invention has been described in more detail by way of examples above, the present invention is not necessarily limited to these embodiments, and various modifications may be made without departing from the spirit of the present invention. Accordingly, the embodiments disclosed in the present invention are not intended to limit the technical idea of the present invention, but to explain the technical idea, and the scope of the technical idea of the present invention is not stabilized by these embodiments. The scope of protection of the present invention should be interpreted by the following claims, and all technical ideas within the scope equivalent thereto should be construed as being included in the scope of the present invention.

10: substrate 20: circuit
30: filler material 40: terminal

Claims (9)

Preparing the substrate 10 on which the heating element circuit 20 is formed, and
Mounting the terminal 40 together with the filler material 30 on the prepared substrate 10,
Including the step of bonding the terminal 40 by putting the substrate 10 on which the terminal 40 is mounted into a brazing furnace and brazing at a temperature of 600 to 700°C,
The filler material 30,
Copper (Cu) 5-10 wt%, manganese (Mn) 0.1-0.5 wt%, silicon (Si) 0.1-0.5 wt%, titanium (Ti), zirconium (Zr), niobium (Nb), hafnium (Hf) and tantalum Terminal bonding method of a ceramic heater for semiconductors having high reliability, characterized in that 0.1 to 0.5 wt% of at least one of Ta, and the balance of aluminum.
The method of claim 1,
The filler material 30,
Terminal bonding method of a ceramic heater for semiconductors having high reliability, characterized in that the solidus (solius) is 500 ~ 550 ℃ and the liquidus (liquidus) is 600 ~ 650 ℃.
delete The method of claim 1,
The brazing is,
It is performed at a high vacuum degree of ^{10 -5 Torr or less,}
The temperature of the brazing furnace is adjusted in the first to third steps,
In the first step, the temperature is raised at a rate of 3 to 5°C/min and maintained at 150 to 250°C for 10 to 30 minutes,
The second step is heated at a rate of 5 to 10°C/min and maintained at 500 to 600°C for 10 to 30 minutes,
The third step is a terminal bonding method of a ceramic heater for semiconductors having high reliability, characterized in that the temperature is raised at a rate of 3 to 5°C/min and maintained at 600 to 700°C for 10 to 30 minutes.
The method of claim 1,
After the step of bonding the terminal 40,
Further comprising cooling the substrate 10 to which the terminal 40 is bonded,
The cooling naturally cools the substrate 10 to which the terminal 40 is bonded to 200°C,
Thereafter, a method for bonding a terminal of a ceramic heater for semiconductors, characterized in that purging cooling with nitrogen or argon gas to room temperature.
The method of claim 1,
Before putting the substrate 10 on which the terminal 40 is mounted into the brazing furnace,
Mounting the jig 100 on the substrate 10 on which the terminal 40 is mounted,
The jig 100,
A jig body 110;
One or more terminal insertion holes 120 formed in the jig body 110;
A load member 130 seated at a position corresponding to the terminal insertion hole 120 on the upper surface of the jig body 100;
At least one through hole 140 formed in a portion of the jig body 110 in which the terminal insertion hole 120 is not formed;
One or more protrusions are formed on the lower surface of the edge of the jig body 110 and when mounted on the substrate 10, the jig body 100 is spaced apart from the substrate 10 so that a space between the jig body 110 and the substrate 10 Terminal bonding method of a ceramic heater for semiconductor comprising a; spacer member 151 to form the portion (S).
The method of claim 6,
At least one extension part 150 extending in the horizontal direction is formed in the jig body 110,
Terminal bonding method of a ceramic heater for semiconductor, characterized in that the spacing member (151) is formed on the lower surface of the extension part (150).
The method of claim 6,
The load member 130 has a protrusion 131 formed on a lower surface thereof, and the protrusion 131 is inserted into the upper side of the terminal insertion hole 120,
When mounted on the substrate 10, the upper portion of the terminal 40 mounted on the substrate 10 is inserted into the lower side of the terminal insertion hole 120, so that pressure on the terminal 40 by the load member 130 A method for bonding a terminal of a ceramic heater for semiconductors, characterized in that this is applied.
The method of claim 6,
Terminal bonding method of a ceramic heater for semiconductor, characterized in that the material of the jig 100 is aluminum oxide.

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