KR102237569B1 - An electronic device comprising a sacrificial film containing graphene oxide and manganese oxide, and a manufacturing method thereof - Google Patents

Abstract

A method of manufacturing an electronic device is provided. The method of manufacturing the electronic device includes preparing a support substrate, providing a source solution containing graphene oxide on the support substrate to form a sacrificial film, and forming a sacrificial film on the sacrificial film. substrate), forming a transistor including at least one of a gate electrode, a source electrode, and a drain electrode including a metal oxide on the base substrate, and a sacrificial film solution is applied to the sacrificial film. By providing, it may include the step of separating the base substrate from the support substrate.

Description

Electronic device comprising a sacrificial film containing graphene oxide and manganese oxide, and a method of manufacturing the same. {An electronic device comprising a sacrificial film containing graphene oxide and manganese oxide, and a manufacturing method thereof}

The present invention relates to an electronic device including a sacrificial film including graphene oxide and manganese oxide, and a method of manufacturing the same, and more specifically, a graphene which separates a support substrate from a base substrate by providing a sacrificial film solution to the sacrificial film. It relates to an electronic device including a sacrificial film containing pin oxide and manganese oxide, and a method of manufacturing the same.

The need for flexible devices such as flexible displays is increasing as wearable devices such as smart watches and smart glasses emerge.

In particular, in order to implement a flexible device such as a flexible display, it is important to develop components such as a flexible substrate, a driving device, a display device, and a thin film encapsulation. Among these components, flexible substrates are manufactured using plastic materials, metal thin-film substrates, and thin glass substrates.

In the case of plastic substrates, which are mainly used as materials for flexible substrates, the degree of thermal expansion according to temperature is large, and a problem in which micropattern mismatch occurs due to a change in dimensions of the plastic substrate caused by heat applied during device processing, or plastic substrates Warpage of the plastic substrate may occur due to a difference in the coefficient of thermal expansion between the substrate and the substrate supporting the same. In order to solve this problem, for example, Korean Patent Publication 10-2005-0064883 (Application No. 10-2003-0096493, Applicant: Samsung Electronics) discloses warping of plastic substrates due to inconsistency in thermal expansion coefficient of plastic substrates. In order to prevent the phenomenon and minimize the occurrence of stress, (a) laminating the plastic substrate on a carrier substrate having a thermal expansion coefficient corresponding to the thermal expansion coefficient of the plastic substrate, (b) marking on the surface of the plastic substrate A method of manufacturing a flexible display device comprising forming a device, and (c) separating the carrier substrate from the plastic substrate is disclosed.

In addition, in addition, when the plastic substrate is attached to the support substrate using an organic substance and then the plastic substrate is separated using a laser, organic substances remain on the support substrate and the support substrate is contaminated. In the case of attaching to, there is a problem that the high-temperature process is limited due to the adhesive. Research and development is needed to solve these technical problems.

Korean Patent Publication No. 10-2005-0064883

One technical problem to be solved by the present invention is an electronic device including a sacrificial film including graphene oxide and manganese oxide that can easily separate a support substrate and a polymer film in a manufacturing process of a flexible display, and a manufacturing method thereof. To provide.

Another technical problem to be solved by the present invention is to provide an electronic device including a sacrificial film including graphene oxide and manganese oxide having improved mobility of a transistor, and a method of manufacturing the same.

Another technical problem to be solved by the present invention is to provide an electronic device including a sacrificial film including graphene oxide and manganese oxide in which the production process is simplified and a large area process is easy, and a method of manufacturing the same.

The technical problem to be solved by the present invention is not limited to the above.

In order to solve the above-described technical problems, the present invention provides a method of manufacturing an electronic device.

According to an embodiment, the method of manufacturing the electronic device includes: preparing a support substrate, providing a source solution containing graphene oxide on the support substrate to form a sacrificial layer, the sacrificial layer Forming a base substrate on the base substrate, forming a transistor including at least one of a gate electrode including a metal oxide, a source electrode, and a drain electrode on the base substrate, and the sacrificial film And separating the base substrate from the support substrate by providing a sacrificial film solution to the support substrate. While the base substrate is separated from the support substrate, the mobility of the transistor is determined by the sacrificial film solution. ) May include enhancements.

According to an embodiment, the source solution may further include a desorption control agent, and the desorption control agent may include generating bubbles by reacting with the sacrificial film solution.

According to an embodiment, the desorption control agent may include manganese (Mn) oxide.

According to an embodiment, the method of manufacturing the electronic device may include controlling a dissolution rate of the sacrificial layer according to a concentration of the sacrificial layer dissolving solution.

According to an embodiment, the method of manufacturing the electronic device may include increasing the dissolution rate of the sacrificial layer as the concentration of the sacrificial layer dissolving solution increases.

According to an embodiment, the method of manufacturing the electronic device may include controlling a dissolution rate of the sacrificial layer according to the content of the graphene oxide in the sacrificial layer.

According to an embodiment, the method of manufacturing the electronic device may include increasing a dissolution rate of the sacrificial layer as the content of the graphene oxide in the sacrificial layer increases.

According to an embodiment, the sacrificial film solution may include hydrogen peroxide (H ₂ O ₂ ).

According to an embodiment, the metal oxide may include Indium Tin Oxide (ITO).

In order to solve the above-described technical problems, the present invention provides an electronic device.

According to an embodiment, the electronic device includes a base substrate including a polymer, and

A transistor disposed on the base substrate and including an active layer, a metal oxide gate electrode, a metal oxide source electrode, and a metal oxide drain electrode, disposed on a support substrate, and a comparison active layer, a comparison gate electrode, and a comparison source electrode , And a comparison transistor including a comparison drain electrode is defined, wherein the comparison active layer, the comparison gate electrode, the comparison source electrode, and the comparison drain electrode include the active layer, the gate electrode, the source electrode, and the drain electrode. The active layer may be formed with the same element and the same thickness as each of and the active layer has a higher oxygen ratio than that of the comparative active layer, and the transistor may include one having a higher mobility compared to the comparison transistor.

According to an embodiment, the mobility of the transistor may include 1.7 times or more higher than the mobility of the comparison transistor.

According to an embodiment, the metal oxide may include Indium Tin Oxide (ITO).

A method of manufacturing an electronic device according to an embodiment of the present invention includes preparing a support substrate, providing a source solution containing graphene oxide on the support substrate, forming a sacrificial layer, and forming a sacrificial layer on the sacrificial layer. Forming a substrate, forming a transistor including at least one of a gate electrode, a source electrode, and a drain electrode including a metal oxide on the base substrate, and providing a sacrificial film solution to the sacrificial film Thus, it may include the step of separating the base substrate from the support substrate. Accordingly, the method of manufacturing an electronic device according to the embodiment can be easily separated from the support substrate without causing deformation or damage to the polymer film in the manufacturing process of the flexible display.

In addition, in the method of manufacturing an electronic device according to the embodiment, not only can the polymer film be easily separated, but also the sacrificial film solution used for separation reacts with the active layer, so that the mobility of the active layer Can improve. As a result, a method of manufacturing an electronic device with improved performance can be provided.

1 is a flowchart illustrating a method of manufacturing an electronic device according to an exemplary embodiment of the present invention.
2 to 4 are diagrams illustrating a manufacturing process of an electronic device according to an embodiment of the present invention.
5 to 8 are photographs of a sacrificial film formed during a manufacturing process of an electronic device according to an exemplary embodiment of the present invention.
9 and 10 are photographs of a sacrificial film reacted with _{H 2} O ₂ during a manufacturing process of an electronic device according to an exemplary embodiment of the present invention.
11 and 12 are photographs taken to confirm the separation of the glass substrate and the PI film by the _{H 2} O _{2 solution.}
13 and 14 are photographs of a residual material remaining in the PI film after the glass substrate and the PI film are separated.
15 and 16 are _{photographs of an effect of an H 2} O ₂ solution on an electronic device according to a comparative example of the present invention.
17 is a graph showing the effect of the concentration of graphene oxide contained in the sacrificial film on the separation of the glass substrate and the PI film in the manufacturing process of an electronic device according to an embodiment of the present invention.
18 and 19 are graphs showing characteristics of a transistor included in an electronic device before and after the glass substrate and the PI film are separated.
20 and 21 are graphs comparing the reliability of transistors included in electronic devices before and after separation of a glass substrate and a PI film.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the technical idea of the present invention is not limited to the embodiments described herein and may be embodied in other forms. Rather, the embodiments introduced herein are provided so that the disclosed contents may be thorough and complete, and the spirit of the present invention may be sufficiently conveyed to those skilled in the art.

In the present specification, when a component is referred to as being on another component, it means that it may be formed directly on the other component or that a third component may be interposed therebetween. In addition, in the drawings, thicknesses of films and regions are exaggerated for effective description of technical content.

In addition, in various embodiments of the present specification, terms such as first, second, and third are used to describe various elements, but these elements should not be limited by these terms. These terms are only used to distinguish one element from another element. Accordingly, what is referred to as a first component in one embodiment may be referred to as a second component in another embodiment. Each embodiment described and illustrated herein also includes its complementary embodiment. In addition, in the present specification,'and/or' has been used to mean including at least one of the elements listed before and after.

In the specification, expressions in the singular include plural expressions unless the context clearly indicates otherwise. In addition, terms such as "comprise" or "have" are intended to designate the presence of features, numbers, steps, components, or a combination thereof described in the specification, and one or more other features, numbers, steps, or configurations. It is not to be understood as excluding the possibility of the presence or addition of elements or combinations thereof. In addition, in the present specification, "connection" is used to include both indirectly connecting a plurality of constituent elements and direct connecting.

In addition, in the following description of the present invention, if it is determined that a detailed description of a related known function or configuration may unnecessarily obscure the subject matter of the present invention, a detailed description thereof will be omitted.

1 is a flowchart illustrating a method of manufacturing an electronic device according to an exemplary embodiment of the present invention, and FIGS. 2 to 4 are diagrams illustrating a manufacturing process of an electronic device according to an exemplary embodiment of the present invention.

1 and 2, a support substrate 110 is prepared (S100). According to an embodiment, the support substrate 110 may be a glass substrate. Unlike this, according to another embodiment, the support substrate 110 may be a semiconductor substrate, a metal substrate, or a plastic substrate. According to an embodiment, the support substrate 110 may be an inflexible substrate. Unlike this, according to another embodiment, the support substrate 110 may be a flexible substrate.

A sacrificial layer 120 may be formed by providing a source solution including graphene oxide on the support substrate 110 (S200 ). The source solution may further include a debonding control agent in addition to graphene oxide. Accordingly, the sacrificial layer 120 may include graphene oxide and a desorption control agent.

According to an embodiment, the graphene oxide may be prepared by a modified Hummer's method. Alternatively, unlike this, the graphene oxide may be prepared by various methods.

According to an embodiment, the desorption control agent may include at least one of a metal, a metal oxide, or a catalase. For example, the metal contained in the desorption regulator is manganese (Mn), potassium (K), lithium (Li), barium (Ba), calcium (Ca), sodium (Na), magnesium (Mg), aluminum It may contain at least one of (Al), chromium (Cr), iron (Fe), cadmium (Cd), cobalt (Co), nickel (Ni), antimony (Sb), or lead (Pb). The metal oxide may include manganese oxide (MnO).

The forming of the sacrificial layer 120 may include preparing the graphene oxide, preparing the source solution by adding the desorption control agent to the graphene oxide, and adding the source solution to the support substrate 110 It may include the step of coating on. For example, the source solution is a method such as drop-casting, spin-coating, spray-coating, or Langmuir blodgette. It can be coated on (110).

1 and 3, a base substrate 130 may be formed on the sacrificial layer 120 (S300 ). The base substrate 130 may be flexible. The base substrate 130 may be more flexible than the support substrate 110.

According to an embodiment, the base substrate 130 may be a polymer film. Alternatively, the base substrate 130 may be a plastic substrate. For example, the base substrate 130 may be a polyimide substrate or a polydimethylsiloxane (PDMS) substrate. Alternatively, the base substrate 130 may be a semiconductor substrate, a glass substrate, or a metal substrate.

According to an embodiment, the base substrate 130 may be generated by curing a solution provided on the sacrificial layer 120. As described above, the sacrificial layer 120 may be formed by a solution process so that an upper surface of the sacrificial layer 120 on which the base substrate 130 is formed may be substantially flat. Accordingly, the surface roughness of the base substrate 130 formed by a solution process can be minimized. As a result, reliability of a transistor to be described later formed on the base substrate 130 may be improved.

A transistor may be formed on the base substrate 130 (S400). The transistor may include a buffer layer 140, source and drain electrodes S and D, an active layer 150, a gate insulating layer 160, and a gate electrode 170.

More specifically, the buffer layer 140 may be formed on the base substrate 130. According to an embodiment, the buffer layer 140 may include a metal oxide. For example, the buffer layer 140 may include Al ₂ O ₃ .

The source and drain electrodes S and D may be formed on the buffer layer 140. The source and drain electrodes S and D may be disposed to be spaced apart from each other. According to an embodiment, the source and drain electrodes S and D may include metal oxide. For example, the source and drain electrodes S and D may include indium tin oxide (ITO).

The active layer 150 may be formed on the buffer layer 140. The active layer 150 is in contact with at least a portion of the source electrode S and at least a portion of the drain electrode D, between the source electrode S and the drain electrode D, and the buffer layer ( 140). According to an embodiment, the active layer 150 may include a metal oxide. For example, the active layer 150 may include Indium Gallium Zinc Oxide (IGZO).

The gate insulating layer 160 may also be formed on the buffer layer 140. The gate insulating layer 160 may be disposed on the buffer layer 140 to cover all of the source electrode S, the drain electrode D, and the active layer 150. According to an embodiment, the gate insulating layer 160 may include a metal oxide. For example, the gate insulating layer 160 may include Al ₂ O ₃ .

The gate electrode 170 may be formed on the gate insulating layer 160. According to an embodiment, the gate electrode 170 may include a metal oxide. For example, the gate electrode 170 may include Indium Tin Oxide (ITO).

As described above, when the gate electrode 170 includes ITO, in the step of separating the base substrate 130 to be described later, the gate electrode 170 may not be oxidized by the sacrificial film solution. In contrast, when the gate electrode 170 includes a metal such as Mo, the gate electrode 170 may be oxidized by a sacrificial film solution in the step of separating the base substrate 130 to be described later. Accordingly, damage may occur to the transistor, resulting in a problem of deteriorating performance.

1 and 4, after the transistor is formed, the sacrificial layer 120 may be dissolved by providing a sacrificial layer solution to the sacrificial layer 120. Accordingly, the base substrate 130 and the transistor may be separated from the support substrate 110 (S500). The sacrificial film dissolving solution may be one that facilitates dissolving the graphene oxide contained in the sacrificial film 120. For example, the sacrificial film solution may include ammonia (NH ₃ ) and/or hydrogen peroxide (H ₂ O ₂ ).

More specifically, when the sacrificial layer solution is provided to the sacrificial layer 120, the desorption control agent included in the sacrificial layer 120 and the sacrificial layer solution are reacted to form bubbles. I can. In this case, the sacrificial layer solution may penetrate into the space where bubbles are generated, so that the sacrificial layer 120 may be dissolved in an accelerated manner. Accordingly, as the content of the desorption control agent increases, the dissolution rate of the sacrificial layer 120 may increase.

Bubbles generated by the desorption control agent may be oxygen gas and/or hydrogen gas. For example, when the desorption aid contains MnO ₂ , Ki, or catalase, and the sacrificial film solution contains hydrogen peroxide, oxygen gas may be generated. Unlike this, for another example, when the desorption control agent contains a metal and the sacrificial film solution contains an acidic solvent, hydrogen gas may be generated by an oxidation-reduction reaction between the metal and the acidic solvent. In this case, the acidic solvent is, for example, HCl, CH ₃ CO ₂ H, H ₂ SO ₄ , C ₆ H ₅ COOH, HNO ₃ , H ₃ PO ₄ , CH ₃ (CH ₂ ) ₇ CH=CH( CH ₂ ) ₇ COOH, H ₃ BO ₃ , HClO ₄ , HBr, Cl ₃ CCOOH, CH ₃ (CH ₂ ) ₁₄ COOH, CH ₃ CH ₂ COOH, (O ₂ N) ₃ C ₆ H ₂ OH, HOOCCOOH, CH ₂ (COOH) ₂ , CH ₃ (CH ₂ ) ₆ COOH, CH ₃ (CH ₂ ) ₄ COOH, CH ₃ (CH ₂ ) ₈ COOH, CH ₃ (CH ₂ ) ₆ COOH, or CH ₃ (CH ₂ ) ₇ It may contain at least any one of COOH.

According to an embodiment, the dissolution rate of the sacrificial layer 120 may be controlled according to the concentration of the sacrificial layer dissolving solution. Specifically, as the concentration of the sacrificial film dissolving solution increases, the dissolution rate of the sacrificial film 120 may increase. According to another embodiment, the dissolution rate of the sacrificial layer 120 may be controlled according to the content of the graphene oxide in the sacrificial layer 120. Specifically, as the content of the graphene oxide in the sacrificial layer 120 increases, the dissolution rate of the sacrificial layer 120 may increase.

While the base substrate 130 is separated from the support substrate 110, the mobility of the transistor may be improved by the sacrificial film solution. More specifically, the separation of the support substrate 110 and the base substrate 130 includes dissolving the support substrate 110, the sacrificial film 120, the base substrate 130, and the transistor as the sacrificial film. It can be carried out by a method of immersion in a liquid. In this case, while the support substrate 110 and the base substrate 130 are separated by the sacrificial layer solution, the active layer 150 of the transistor may also react with the sacrificial layer solution. When the active layer 150 reacts with the sacrificial film solution, the active layer 150 may be oxidized. The oxidized active layer 150 may have improved mobility compared to the active layer 150 before being oxidized. As a result, the mobility of the transistor separated from the support substrate 110 by the sacrificial film solution may be improved.

That is, the base substrate 130 separated from the support substrate 110 and the electronic device according to the embodiment including the transistor include a comparison support substrate and a comparison transistor disposed on the comparison support substrate. Compared with the comparative electronic device, mobility may be high.

More specifically, the comparison transistor may include a comparison active layer, a comparison gate electrode, a comparison source electrode, a comparison drain electrode, and a comparison gate insulating layer. In addition, the comparison transistor may include the comparison active layer, the comparison gate electrode, the comparison source electrode, the comparison drain electrode, and the comparison gate insulating film, the active layer 150 of the transistor according to the embodiment, and the gate electrode ( 170), the source electrode (S), the drain electrode (D), and the gate insulating layer 160 may be formed of the same element and the same thickness, respectively.

In other words, the comparison transistor may be the transistor in a state before being separated from the support substrate 110. Alternatively, alternatively, the comparison transistor may be a transistor that is manufactured on a glass substrate by the same process as the transistor according to the embodiment of the present invention and does not require a substrate separation process according to the embodiment of the present invention.

In this case, the active layer 150 included in the transistor according to the embodiment may have a higher oxygen ratio than the active layer included in the comparison transistor. That is, in the case of the active layer 150, as it is oxidized by the sacrificial film solution, the oxidation degree may be higher than that of the comparative active layer. In this case,'oxidation degree' means the degree of oxidation, and'oxidation degree is high' means more oxidation. As a result, as the active layer 150 has a higher oxidation degree than the comparative active layer, the mobility of the transistor may be higher than the mobility of the comparison transistor. Specifically, the mobility of the transistor may be at least 1.7 times higher than that of the comparison transistor.

Recently, in the case of a flexible display, which has an increasing market size, there is a problem in that it is difficult to easily separate a polymer film such as polyimide from a support substrate in the process of manufacturing it. Conventional methods for solving this problem include a method of simply physically applying a force to separate, a method of using a laser, and the like, both of which have fatal problems in that the polymer film is deformed or damaged.

However, in the method of manufacturing an electronic device according to an embodiment of the present invention, the step of preparing the support substrate 110, by providing a source solution containing graphene oxide on the support substrate 110, the sacrificial film Forming 120, forming the base substrate 130 on the sacrificial layer 120, the gate electrode 170 including a metal oxide, and the source on the base substrate 130 Forming a transistor including at least one of an electrode (S) and the drain electrode (D), and by providing the sacrificial film solution to the sacrificial film 120, the Separating the base substrate 130 may be included. Accordingly, the method of manufacturing an electronic device according to the embodiment can be easily separated from the support substrate without causing deformation or damage to the polymer film in the manufacturing process of the flexible display.

In addition, in the method of manufacturing an electronic device according to the embodiment, not only can the polymer film be easily separated, but the sacrificial film solution used for separation is reacted with the active layer 150 to form the active layer 150. It is possible to improve the mobility (mobility). As a result, a method of manufacturing an electronic device with improved performance can be provided.

In the above, an electronic device and a method of manufacturing the same according to an embodiment of the present invention have been described. Hereinafter, specific experimental examples and characteristic evaluation results of the electronic device and its manufacturing method according to the above embodiment will be described.

Electronic device manufacturing according to the embodiment

A glass substrate is prepared. On the glass substrate, a source solution containing graphene oxide and manganese oxide was coated, and a sacrificial film containing graphene oxide and manganese oxide was coated.

Thereafter, a PI (polyimide) film was formed on the sacrificial film, and an Al ₂ O ₃ buffer layer, an ITO source and drain electrode, an IGZO active layer, an Al ₂ O ₃ gate insulating film, and an ITO gate electrode were sequentially manufactured on the PI film. , A transistor was manufactured. Accordingly, a structure in which a glass substrate, a sacrificial film, a PI film, and a transistor are sequentially stacked was manufactured.

The prepared structure _{was immersed in an H 2} O ₂ solution to dissolve the sacrificial film to separate the glass substrate and the PI film. As a result, an electronic device according to the above embodiment including a PI film and a transistor was manufactured.

Electronic device manufacturing according to the comparative example

The electronic device according to the above embodiment was manufactured, but the gate electrode included in the transistor was manufactured using molybdenum (Mo). Accordingly, an electronic device according to the comparative example was manufactured.

5 to 8 are photographs of a sacrificial film formed during a manufacturing process of an electronic device according to an exemplary embodiment of the present invention.

Referring to FIG. 5, a sacrificial film formed during the manufacturing process of the electronic device according to the embodiment is shown by photographing a scanning electron microscope (SEM) at a magnification of 40 μm. Referring to FIG. 6, the electronic device according to the embodiment The sacrificial film formed during the manufacturing process of was shown by SEM photographing at a magnification of 5 μm, and referring to FIG. 7, an SEM analysis photograph is taken to analyze the components of the sacrificial film formed during the manufacturing process of the electronic device according to the embodiment. It was photographed and shown, and referring to FIG. 8, the sacrificial film formed during the manufacturing process of the electronic device according to the embodiment was photographed by atomic force microscopy (AFM).

As can be seen through FIGS. 5 to 8, it was confirmed that the sacrificial film formed during the manufacturing process of the electronic device according to the embodiment includes both carbon and manganese. That is, it can be seen that coating was easily performed on a glass substrate through a source solution containing graphene oxide and manganese oxide.

9 and 10 are photographs of a sacrificial film reacted with _{H 2} O ₂ during a manufacturing process of an electronic device according to an exemplary embodiment of the present invention.

9, the sacrificial film included in the electronic device in the state before the sacrificial film was dissolved by the _{H 2} O ₂ solution was shown by taking a general picture. Referring to FIG. 10, the sacrificial film was dissolved by the _{H 2} O _{2 solution.} The phenomenon that occurs on the sacrificial film in the process of being formed was shown by taking a general picture.

As can be seen in FIGS. 9 and 10, when the H ₂ O ₂ solution and the sacrificial film were reacted during the manufacturing process of the electronic device according to the embodiment, it was confirmed that numerous bubbles were generated. Accordingly, it was found that the cause of the separation of the glass substrate and the PI film was the generation of bubbles due to the reaction of the sacrificial film with the _{H 2} O _{2 solution.}

11 and 12 are photographs taken to confirm the separation of the glass substrate and the PI film by the _{H 2} O _{2 solution.}

11 and 12, an electronic device in which the glass substrate and the PI film are in a state before separation by the _{H 2} O ₂ solution was photographed and shown in FIG. 11, and the _{glass substrate and the PI film were taken by the H 2} O ₂ solution. The electronic device in this separated state was photographed and shown in FIG. 12.

As can be seen through FIGS. 11 and 12, in the case of the electronic device manufactured through the method according to the embodiment, it was confirmed that the PI film was not damaged and was easily separated.

13 and 14 are photographs of a residual material remaining in the PI film after the glass substrate and the PI film are separated.

13A and 13B, a PI film included in an electronic device in a state before the glass substrate and the PI film are separated is photographed by atomic force microscopy (AFM) to measure a root mean square (RMS) value. And, it is shown in Figure 13 (a). In addition, after the glass substrate and the PI film were separated, the PI film included in the electronic device was photographed by AFM to measure the RMS value, which is shown in FIG. 13(b). FIG. 14 is a photograph showing an AFM measurement of the amount of residue remaining in the PI film in the state (b) of FIG. 13.

As can be seen in FIGS. 13 and 14, _{when the glass substrate and the PI film were separated by H 2} O ₂ , it was confirmed that there was a low residue of 8.6% on the PI film. That is, it was found that the glass substrate and the PI film were easily separated by _{H 2} O _2.

15 and 16 are _{photographs of an effect of an H 2} O ₂ solution on an electronic device according to a comparative example of the present invention.

Referring to FIG. 15, the gate electrode included in the electronic device according to the comparative example in the state before the glass substrate and the PI film were separated by the _{H 2} O _{2 solution was photographed and shown, and FIGS. 16A to 16} refer to c) if, 1.5 wt% concentration of H ₂ O _2, 6 wt% concentration of H ₂ O _2, the electronic device of the detached glass substrate and the PI film by a 30 wt% concentration of H ₂ O ₂ The included gate electrode was photographed and shown in FIGS. 16A to 16C, respectively.

As can be seen in FIGS. 15 and 16, in the case of an electronic device including a molybdenum (Mo) gate electrode, it was confirmed that the molybdenum (Mo) gate electrode was oxidized and damaged due to a reaction with _{H 2} O _2. . In addition, _{it was confirmed that as the concentration of H 2} O ₂ increased, the degree of oxidation was increased, and damage was also largely generated.

17 is a graph showing the effect of the concentration of graphene oxide contained in the sacrificial film on the separation of the glass substrate and the PI film in the manufacturing process of an electronic device according to an embodiment of the present invention.

Referring to FIG. 17, the electronic device according to the above embodiment is prepared, but the concentration of graphene oxide (GO) is differently controlled to 0 to 2.0 mg/mL in the process of manufacturing the sacrificial film, and then the glass substrate and the The PI film was separated by measuring the time (Time, S). In addition, the coverage (%) of the sacrificial film was also measured and expressed at each concentration.

As can be seen in FIG. 17, in the manufacturing process of the electronic device according to the embodiment, as the concentration of graphene oxide (GO) included in the sacrificial film increases, the separation time between the glass substrate and the PI film also increases. there was. In addition, as the concentration of graphene oxide (GO) contained in the sacrificial layer increased, it was confirmed that the coverage (%) of the sacrificial layer also increased.

In contrast, the electronic device according to the above embodiment was prepared, but _{the concentration of the H 2} O ₂ solution was changed to 1.5 wt%, 6 wt%, and 30 wt%, respectively, and then the glass substrate and the PI film were separated and separated. The time it took was measured. The measured results are summarized in <Table 1> below.

division 1.5 wt% 6 wt% 30 wt% Separation time of glass substrate and PI film 10.5 min 9.5 min 7 min

17 and <Table 1>, the rate at which the sacrificial film is dissolved in order to separate the glass substrate and the PI film may _{be controlled according to the concentration of the H 2} O ₂ solution and the content of graphene oxide contained in the sacrificial film. I could see that I could.

18 and 19 are graphs showing characteristics of a transistor included in an electronic device before and after the glass substrate and the PI film are separated.

Referring to FIG. 18, the characteristics of the transistor included in the electronic device in the state before the glass substrate and the PI film are separated were measured and shown. Referring to FIG. 19, the electronic device in the state after the glass substrate and the PI film are separated. The characteristics of the transistor included in are measured and shown. The results measured in FIGS. 18 and 19 are summarized in Table 2 below.

division V _th [V] μ _sat [cm ² /Vs] S.S.[V/decade] I _ON /I _OFF Before separation 1.94±0.13 3.6±0.85 0.24±0.01 2.78E+10 After separation 2.15±0.38 10.35±2.29 0.25±0.00 8.51E+09

As can be seen from FIGS. 18 and 19, <Table 2>, the mobility of the transistor included in the electronic device in which the glass substrate and the PI film are separated by _{H 2} O _{2 is 10.35±2.29, and is represented by 10.35±2.29.} It was confirmed that the mobility of the transistor included in the electronic device in the state before separation was 3.6±0.85. That is, _{when the glass substrate and the PI film are separated by H 2} O ₂ , it was found that the mobility characteristics of the transistor increased from 1.7 times to 4.51 times.

20 and 21 are graphs comparing the reliability of a transistor included in an electronic device before and after the glass substrate and the PI film are separated.

Referring to FIG. 20, a positive bias temperature stress (PBTS) of a transistor included in an electronic device in a state before the glass substrate and the PI film are separated was measured and shown. Referring to FIG. 21, the glass substrate and the PI film are separated. The PBTS of the transistor included in the electronic device in the post-processed state was measured and shown.

As can be seen in FIGS. 20 and 21, when the H ₂ O ₂ solution is used to separate the glass substrate and the PI film, it was confirmed that the reliability of the transistor disposed on the PI film was hardly affected.

As described above, the present invention has been described in detail using preferred embodiments, but the scope of the present invention is not limited to specific embodiments, and should be interpreted by the appended claims. In addition, those who have acquired ordinary knowledge in this technical field should understand that many modifications and variations are possible without departing from the scope of the present invention.

110: support substrate
120: sacrificial curtain
130: base substrate
140: buffer layer
150: active layer
S, D: source electrode, drain electrode
160: gate insulating film
170: gate electrode

Claims (12)

Preparing a support substrate;
Forming a sacrificial film by providing a source solution containing graphene oxide on the support substrate;
Forming a base substrate on the sacrificial layer;
Forming a transistor including at least one of a gate electrode including ITO, an active layer including a semiconductor oxide, a source electrode, and a drain electrode on the base substrate; And
Providing a sacrificial film solution to the sacrificial film to separate the base substrate from the support substrate,
While the base substrate is separated from the support substrate, the mobility of the transistor is improved by the sacrificial film solution.
The method of claim 1,
The source solution further comprises a desorption control agent,
The desorption control agent, a method of manufacturing an electronic device comprising generating bubbles by reacting with the sacrificial film solution.
The method of claim 2,
The desorption control agent, a method of manufacturing an electronic device containing manganese (Mn) oxide.
The method of claim 1,
A method of manufacturing an electronic device comprising controlling a dissolution rate of the sacrificial film according to the concentration of the sacrificial film dissolving solution.
The method of claim 4,
As the concentration of the sacrificial film dissolving solution increases, the dissolution rate of the sacrificial film increases.
The method of claim 1,
A method of manufacturing an electronic device comprising controlling a dissolution rate of the sacrificial layer according to the graphene oxide content in the sacrificial layer.
The method of claim 6,
As the graphene oxide content in the sacrificial layer increases, a dissolution rate of the sacrificial layer increases.
The method of claim 1,
The sacrificial film solution is a method of manufacturing an electronic device containing _{hydrogen peroxide (H 2} O _{2 ).}
delete A base substrate containing a polymer; And
It is disposed on the base substrate and includes a transistor including an active layer including a semiconductor oxide, a gate electrode including ITO, a metal oxide source electrode, and a metal oxide drain electrode,
A comparison transistor disposed on the supporting substrate and including a comparison active layer, a comparison gate electrode, a comparison source electrode, and a comparison drain electrode is defined,
The comparison active layer, the comparison gate electrode, the comparison source electrode, and the comparison drain electrode are formed of the same element and the same thickness as the active layer, the gate electrode, the source electrode, and the drain electrode, respectively,
Wherein the active layer has a higher oxygen ratio than the comparative active layer, and the transistor has a higher mobility compared to the comparison transistor.
The method of claim 10,
The electronic device, wherein the mobility of the transistor is 1.7 times or more higher than the mobility of the comparison transistor.
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