KR102235610B1 - 상부 코팅층 형성용 조성물 및 이를 이용한 레지스트 패턴 형성 방법 - Google Patents

상부 코팅층 형성용 조성물 및 이를 이용한 레지스트 패턴 형성 방법 Download PDF

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Publication number
KR102235610B1
KR102235610B1 KR1020140042023A KR20140042023A KR102235610B1 KR 102235610 B1 KR102235610 B1 KR 102235610B1 KR 1020140042023 A KR1020140042023 A KR 1020140042023A KR 20140042023 A KR20140042023 A KR 20140042023A KR 102235610 B1 KR102235610 B1 KR 102235610B1
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KR
South Korea
Prior art keywords
composition
coating layer
forming
group
upper coating
Prior art date
Application number
KR1020140042023A
Other languages
English (en)
Korean (ko)
Other versions
KR20150059574A (ko
Inventor
김현우
테츠오 오카야스
샤오웨이 왕
박철홍
게오르그 파울로스키
유스케 하마
Original Assignee
삼성전자주식회사
에이제트 일렉트로닉 머티어리얼스 (룩셈부르크) 에스.에이.알.엘.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 삼성전자주식회사, 에이제트 일렉트로닉 머티어리얼스 (룩셈부르크) 에스.에이.알.엘. filed Critical 삼성전자주식회사
Priority to US14/549,911 priority Critical patent/US9804493B2/en
Publication of KR20150059574A publication Critical patent/KR20150059574A/ko
Application granted granted Critical
Publication of KR102235610B1 publication Critical patent/KR102235610B1/ko

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/002—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor using materials containing microcapsules; Preparing or processing such materials, e.g. by pressure; Devices or apparatus specially designed therefor
    • G03F7/0022—Devices or apparatus
    • G03F7/0025—Devices or apparatus characterised by means for coating the developer
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020140042023A 2013-11-22 2014-04-08 상부 코팅층 형성용 조성물 및 이를 이용한 레지스트 패턴 형성 방법 KR102235610B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US14/549,911 US9804493B2 (en) 2013-11-22 2014-11-21 Composition for forming topcoat layer and resist pattern formation method employing the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2013-242092 2013-11-22
JP2013242092A JP6445760B2 (ja) 2013-11-22 2013-11-22 上層膜形成用組成物およびそれを用いたレジストパターン形成方法

Publications (2)

Publication Number Publication Date
KR20150059574A KR20150059574A (ko) 2015-06-01
KR102235610B1 true KR102235610B1 (ko) 2021-04-05

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020140042023A KR102235610B1 (ko) 2013-11-22 2014-04-08 상부 코팅층 형성용 조성물 및 이를 이용한 레지스트 패턴 형성 방법

Country Status (2)

Country Link
JP (1) JP6445760B2 (ja)
KR (1) KR102235610B1 (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102432661B1 (ko) 2015-07-07 2022-08-17 삼성전자주식회사 극자외선용 포토레지스트 조성물 및 이를 이용하는 포토레지스트 패턴의 형성 방법

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120263921A1 (en) * 2010-09-29 2012-10-18 Yager Thomas A Optical lithography using graphene contrast enhancement layer
JP2013079176A (ja) * 2011-10-05 2013-05-02 Dic Corp 修飾グラフェン、膜、及び成形体
JP2013152928A (ja) * 2011-12-28 2013-08-08 Unitika Ltd 透明導電膜

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4727567B2 (ja) * 2006-12-27 2011-07-20 Ａｚエレクトロニックマテリアルズ株式会社 反射防止膜形成用組成物およびそれを用いたパターン形成方法
JP4786636B2 (ja) * 2007-12-26 2011-10-05 Ａｚエレクトロニックマテリアルズ株式会社 反射防止膜形成用組成物およびそれを用いたパターン形成方法
US8178201B2 (en) * 2009-03-31 2012-05-15 Korea Institute Of Science And Technology Electroconductive particle comprising graphene-coated polymer particle, anisotropic conductive film comprising same and method of making thereof
KR101969476B1 (ko) * 2010-06-25 2019-04-16 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치 및 방법
CN103168274B (zh) * 2010-10-21 2016-07-06 日产化学工业株式会社 Euv光刻用抗蚀剂上层膜形成用组合物
KR20120058127A (ko) * 2010-11-29 2012-06-07 삼성전기주식회사 다층 배선기판용 절연 수지 조성물 및 이를 포함하는 다층 배선기판
KR101307538B1 (ko) * 2011-01-10 2013-09-12 건국대학교 산학협력단 산화와 수소화를 이용한 그래핀의 나노 리쏘그라피 치제조 장치 및 그 방법

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120263921A1 (en) * 2010-09-29 2012-10-18 Yager Thomas A Optical lithography using graphene contrast enhancement layer
JP2013079176A (ja) * 2011-10-05 2013-05-02 Dic Corp 修飾グラフェン、膜、及び成形体
JP2013152928A (ja) * 2011-12-28 2013-08-08 Unitika Ltd 透明導電膜

Also Published As

Publication number Publication date
JP2015102627A (ja) 2015-06-04
JP6445760B2 (ja) 2018-12-26
KR20150059574A (ko) 2015-06-01

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