KR102233424B9 - Gas sensor with improved contact resistance and the fabrication method thereof - Google Patents

Gas sensor with improved contact resistance and the fabrication method thereof

Info

Publication number
KR102233424B9
KR102233424B9 KR1020190019968A KR20190019968A KR102233424B9 KR 102233424 B9 KR102233424 B9 KR 102233424B9 KR 1020190019968 A KR1020190019968 A KR 1020190019968A KR 20190019968 A KR20190019968 A KR 20190019968A KR 102233424 B9 KR102233424 B9 KR 102233424B9
Authority
KR
South Korea
Prior art keywords
gas sensor
contact resistance
fabrication method
improved contact
improved
Prior art date
Application number
KR1020190019968A
Other languages
Korean (ko)
Other versions
KR20200101731A (en
KR102233424B1 (en
Inventor
이수민
이희덕
Original Assignee
한국센서연구소 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 한국센서연구소 주식회사 filed Critical 한국센서연구소 주식회사
Priority to KR1020190019968A priority Critical patent/KR102233424B1/en
Publication of KR20200101731A publication Critical patent/KR20200101731A/en
Application granted granted Critical
Publication of KR102233424B1 publication Critical patent/KR102233424B1/en
Publication of KR102233424B9 publication Critical patent/KR102233424B9/en

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • G01N27/12Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
    • G01N27/125Composition of the body, e.g. the composition of its sensitive layer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02436Intermediate layers between substrates and deposited layers
    • H01L21/02439Materials
    • H01L21/02485Other chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274Photolithographic processes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321After treatment
    • H01L21/3213Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
KR1020190019968A 2019-02-20 2019-02-20 Gas sensor with improved contact resistance and the fabrication method thereof KR102233424B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020190019968A KR102233424B1 (en) 2019-02-20 2019-02-20 Gas sensor with improved contact resistance and the fabrication method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020190019968A KR102233424B1 (en) 2019-02-20 2019-02-20 Gas sensor with improved contact resistance and the fabrication method thereof

Publications (3)

Publication Number Publication Date
KR20200101731A KR20200101731A (en) 2020-08-28
KR102233424B1 KR102233424B1 (en) 2021-03-29
KR102233424B9 true KR102233424B9 (en) 2022-06-10

Family

ID=72265902

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020190019968A KR102233424B1 (en) 2019-02-20 2019-02-20 Gas sensor with improved contact resistance and the fabrication method thereof

Country Status (1)

Country Link
KR (1) KR102233424B1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102616701B1 (en) * 2020-12-21 2023-12-21 한국센서연구소 주식회사 Gas sensor with improved contact resistance and the fabrication method thereof

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20120016444A (en) * 2010-08-16 2012-02-24 연세대학교 산학협력단 Conducting polymer and carbon nanotubes composite based gas sensor fabrication method thereof
KR101301983B1 (en) * 2012-01-26 2013-08-30 동의대학교 산학협력단 Trimethylamine Gas sensor and manufacturing method of the same
KR101495627B1 (en) * 2013-02-26 2015-02-25 서울대학교산학협력단 3-dimensional fin fet type gas-sensitive device having horizontal floating gate
KR101903147B1 (en) * 2017-06-16 2018-10-01 연세대학교 산학협력단 A gas sensor based on functionalized transition metal dichalcogenide for enhancing reactivity

Also Published As

Publication number Publication date
KR20200101731A (en) 2020-08-28
KR102233424B1 (en) 2021-03-29

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Legal Events

Date Code Title Description
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
G170 Re-publication after modification of scope of protection [patent]