KR102204257B1 - Light source apparatus - Google Patents

Abstract

The present invention is to provide a light source device with good heat dissipation using a plurality of semiconductor laser devices, comprising a holding member in which the plurality of semiconductor laser devices are disposed, the plurality of light source devices using a plurality of semiconductor laser devices. In the semiconductor laser device of at least one of the semiconductor laser devices, when the holding member is viewed from the front surface, the relative position in the optical axis direction with the adjacent semiconductor laser device is the optical axis direction with the adjacent semiconductor laser device It is disposed on the holding member so as to be larger than the relative position in the direction perpendicular to the.

Description

Light source device {LIGHT SOURCE APPARATUS}

The present invention relates to a light source device, and more particularly, to a light source device using a plurality of semiconductor laser devices.

Conventionally, a light source device using a plurality of semiconductor laser devices has been proposed (refer to Patent Document 1).

[Patent Literature]

[Patent Document 1] Japanese Patent Application Publication No. 2005-20663

However, the conventional light source device has a problem that heat dissipation is poor, and the temperature of the semiconductor laser device rises with the passage of use time, and the light output is significantly lowered.

Therefore, an object of the present invention is to provide a light source device having good heat dissipation using a plurality of semiconductor laser devices.

According to the present invention, the problem is solved by the following means.

The present invention is a light source device using a plurality of semiconductor laser devices, comprising a holding member on which the plurality of semiconductor laser devices are disposed, and at least one of the plurality of semiconductor laser devices includes the holding member The holding member so that the relative position in the optical axis direction with the adjacent semiconductor laser device when viewed from the front surface is larger than the relative position in the direction perpendicular to the optical axis direction with the adjacent semiconductor laser device. It is a light source device, characterized in that it is arranged in the.

Further, according to the present invention, the semiconductor laser device is the light source device described above, wherein the collimator lens is integrated.

Further, according to the present invention, a concave portion is provided on the front surface and the rear surface of the holding member, respectively, and the plurality of semiconductor laser devices are respectively disposed in the concave portion.

Further, according to the present invention, at least one of the concave portions has an inner diameter formed according to an outer diameter of a semiconductor laser device.

In addition, in the present invention, at least one of the concave portions is the above-described light source device, wherein the depth is formed according to the thickness of the semiconductor laser device.

Further, the present invention is the light source device described above, wherein a heat dissipation member is provided on at least one of a front surface and a rear surface of the holding member.

Further, according to the present invention, the semiconductor laser device has a stem, and the heat dissipation member is in contact with the stem of the semiconductor laser device.

In addition, the present invention is the light source device described above, wherein the semiconductor laser device is held by the holding member by being able to press the stem by the heat dissipating member.

Advantageous Effects of Invention According to the present invention, a light source device having good heat dissipation using a plurality of semiconductor laser devices can be provided.

1 is a schematic front perspective view of a light source device according to a first embodiment of the present invention.
Fig. 2 is a schematic cross-sectional perspective view of a light source device according to a first embodiment of the present invention (cross section AA in Fig. 1).
3 is a schematic cross-sectional view of a light source device according to a first embodiment of the present invention (cross section AA in FIG. 1).
4 is a schematic diagram for explaining the relative positions of two semiconductor laser devices.
5 is a schematic perspective view showing the appearance of a light source device according to a second embodiment of the present invention.
6 is a schematic perspective view showing a configuration of a light source device according to a second embodiment of the present invention.
Fig. 7 is a schematic top view (a) showing a semiconductor laser device according to a second embodiment of the present invention, and a schematic cross-sectional view (b) showing a cross section BB thereof.
Fig. 8 is a schematic top view (a) showing an enlarged structure of a part of a light source device according to a second embodiment of the present invention, and a schematic cross-sectional view (b) showing the CC cross section.
9 is a schematic perspective view (a) showing the appearance of a light source device according to a third embodiment of the present invention, and a schematic perspective view (b) showing the configuration thereof.

Hereinafter, an embodiment for carrying out the present invention will be described with reference to the accompanying drawings.

<First embodiment>

1 is a schematic front perspective view of a light source device according to a first embodiment of the present invention, and FIG. 2 is a schematic cross-sectional perspective view of a light source device according to a first embodiment of the present invention (cross section AA in FIG. 1) to be. 3 is a schematic cross-sectional view of the light source device according to the first embodiment of the present invention (a cross-section AA in FIG. 1), and FIG. 3(a) is a schematic diagram showing various members before being installed on the holding member. Fig. 3(b) is a diagram schematically showing various members after being attached to the holding member.

1, 2, and 3, the light source device 1011 according to the first embodiment of the present invention is a light source device 1011 using a plurality of semiconductor laser devices 1013, and includes a plurality of semiconductors. A laser device 1013 and a holding member 1015 on which a plurality of semiconductor laser devices 1013 are disposed are provided.

In the plurality of semiconductor laser devices 1013, when the holding member 1015 is viewed from the front surface, the relative position in the optical axis direction with the adjacent semiconductor laser device 1013 is the optical axis with the adjacent semiconductor laser device 1013 It is disposed on the holding member 1015 so as to be larger than the relative position in the direction perpendicular to the direction.

The "optical axis direction" is a direction parallel to the optical axis of a semiconductor laser device adopted to measure a relative position with an adjacent semiconductor laser device. The optical axis of the semiconductor laser device can be defined as an axis perpendicular to the light exit cross section of the semiconductor laser element included in the semiconductor laser device.

Fig. 4 is a schematic diagram illustrating the relative positions of two semiconductor laser devices, Fig. 4(a) is a diagram showing a case where the optical axis directions of two semiconductor laser devices are parallel, and Fig. 4(b) is parallel It is a figure which shows the case where it does not.

First, a case where the optical axis directions of two semiconductor laser devices are parallel will be described.

In FIG. 4A, the semiconductor laser device 1131 and the semiconductor laser device 1132 are in an adjacent relationship when the holding member 1015 is viewed from the front surface. The optical axis direction X1 of the semiconductor laser device 1131 and the optical axis direction X2 of the semiconductor laser device 1132 are parallel.

A relative position of the semiconductor laser device 1131 with the semiconductor laser device 1132 in the optical axis direction X1 (the optical axis direction of the semiconductor laser device 1131) is A. The relative position of the semiconductor laser device 1131 in the direction perpendicular to the optical axis direction X1 (the optical axis direction of the semiconductor laser device 1131) with the semiconductor laser device 1132 is B.

Next, a case where the optical axis directions of the two semiconductor laser devices are not parallel will be described.

In FIG. 4B, the semiconductor laser device 1131 and the semiconductor laser device 1132 are in an adjacent relationship when the holding member 1015 is viewed from the front surface. The optical axis direction X1 of the semiconductor laser device 1131 and the optical axis direction X2 of the semiconductor laser device 1132 are not parallel.

A relative position of the semiconductor laser device 1131 with the semiconductor laser device 1132 in the optical axis direction X1 (the optical axis direction of the semiconductor laser device 1131) is A. The relative position of the semiconductor laser device 1131 in the direction perpendicular to the optical axis direction X1 (the optical axis direction of the semiconductor laser device 1131) with the semiconductor laser device 1132 is B.

As described above, the case where the optical axis directions of the two semiconductor laser devices are parallel and not parallel have been described, but in the first embodiment of the present invention, in any case, the semiconductor laser device 1131 is a semiconductor laser device ( It is arranged in the holding member 1015 so that the relative position A with 1132 may become larger than the relative position B.

In addition, in the first embodiment of the present invention, an embodiment has been described in which the relative positions A and B of the semiconductor laser device are determined based on the center on the bottom of the stem provided in the semiconductor laser device. The form of obtaining the relative position of the semiconductor laser device based on the location is also included.

As described above, the light source device 1011 according to the first embodiment of the present invention has been described, but according to the light source device 1011 according to the first embodiment of the present invention, the plurality of semiconductor laser devices 1013 are The heat generated by the semiconductor laser device 1013 is densely arranged in a direction perpendicular to the direction in which light is emitted from the light source device 1011, but sparsely arranged in the direction in which light is emitted from the light source device 1011. The light source device 1011 having good heat dissipation using a plurality of semiconductor laser devices 1013 can be provided, which can be efficiently released to the outside.

In addition, in the above description, a form in which all of the plurality of semiconductor laser devices 1013 are arranged according to the above-described relative position has been described, but at least one of the plurality of semiconductor laser devices 1013 is arranged according to the above-described relative position. It includes the form that becomes.

It will be described in more detail below.

[Semiconductor laser device]

The semiconductor laser device 1013 includes a stem 1017, a semiconductor laser element 1019 mounted on the stem 1017, a cap 1021 sealing the semiconductor laser element 1019, and a lead pin 1023. We have.

As the semiconductor laser element 1019, an arbitrary oscillation wavelength (emission color) such as visible light, ultraviolet light, and infrared light can be selected. For example, as a semiconductor laser device capable of oscillating ultraviolet light, blue, and green visible light, a group II-VI compound semiconductor (ZnSe, etc.) or a nitride semiconductor (In _X Al _Y Ga _1-XY N, 0≤X, 0≤ Y, X+Y≦1) and those using GaP are mentioned. In addition, examples of semiconductor laser devices capable of oscillating red light include those using GaAlAs, AlInGaP, and the like. Further, a semiconductor laser element made of a material other than this may be used, and the oscillation wavelength or number can be appropriately selected depending on the purpose or use.

In addition, as described later, the semiconductor laser device 1013 according to the first embodiment of the present invention is a collimator lens-integrated semiconductor laser device 1013 including a collimator lens 1025 in a cap 1021. The semiconductor laser device 1013 integrated with a collimator lens is an example of a semiconductor laser device 1013 capable of emitting parallel light.

[Collimator lens]

The collimator lens 1025 is an example of a member that makes the light emitted from the semiconductor laser element 1019 into parallel light.

When a member that makes the light emitted from the semiconductor laser element 1019 such as the collimator lens 1025 into parallel light is used, the light emitted from the semiconductor laser element 1019 is used as parallel light, and the surrounding members (through Since light loss in the inner walls of the holes 1029 and 1033) can be suppressed, it becomes easy to shift the semiconductor laser device 1013 in the optical axis direction.

In the first embodiment of the present invention, the collimator lens 1025 is included in the cap 1021 of the semiconductor laser device 1013. Therefore, it is not necessary to install an adjustment device (for example, a device for adjusting the relative position of the semiconductor laser device 1013 and the collimator lens 1025), and a means for holding the collimator lens 1025 is provided. Since it is not necessary to install the device 1015 or the like, a plurality of semiconductor laser devices 1013 can be easily arranged at a predetermined arrangement position.

As the collimator lens 1025, a lens made of a glass material such as BK7 can be used, for example.

[Holding support member]

As the holding member 1015, a metal material such as aluminum, copper, or stainless steel can be used, for example.

Concave portions 1027 are respectively provided on the front and rear surfaces of the holding member 1015, and a plurality of semiconductor laser devices 1013 are disposed in the concave portions 1027, respectively. In more detail, the holding member 1015 is provided with a plurality of through holes 1029, and a recessed portion 1027 is formed at the end of the through holes 1029.

The lead pin 1023 of the semiconductor laser device 1013 disposed in the concave portion 1027 of the front surface of the holding member 1015 is passed through the through hole 1029. The cap 1021 of the semiconductor laser device 1013 disposed in the concave portion 1027 on the rear surface of the holding member 1015 is inserted into the through hole 1029.

The concave portion 1027 has an inner diameter substantially the same as the outer diameter of the stem 1017 (an example of a form in which the inner diameter of the concave portion 1027 is formed according to the outer diameter of the semiconductor laser device 1013). For this reason, for the concave portion 1027 provided on the front surface of the holding member 1015, the bottom surface is in contact with the back surface of the stem 1017 of the semiconductor laser device 1013, and preferably, the bottom surface and the side surface The semiconductor laser device 1013 contacts the back and side surfaces of the stem 1017, respectively. In addition, with respect to the concave portion 1027 provided on the rear surface of the holding member 1015, the bottom surface is in contact with the surface of the stem 1017 of the semiconductor laser device 1013, and preferably, the bottom surface and the side surface are The semiconductor laser device 1013 contacts the surface and the side surfaces of the stem 1017, respectively.

In addition, the concave portion 1027 has a depth substantially equal to the thickness of the stem 1017 (an example of a shape in which the depth of the concave portion 1027 is formed according to the thickness of the semiconductor laser device 1013) ). For this reason, the stem 1017 of the semiconductor laser device 1013 is accommodated so as to fit in the recess 1027, and in the holding member 1015, the surface of the stem 1017 accommodated in the recess 1027 The heat radiation member 1031 is brought into contact, and in the rear surface of the holding member 1015, the back surface of the stem 1017 accommodated in the recessed portion 1027 contacts the heat radiation member 1031. Further, for example, when the stem 1017 has a disk-shaped base portion or an element mounting portion, the thickness of the disk-shaped base portion becomes an example of the thickness of the stem 1017.

Thus, in the first embodiment of the present invention, by bringing the stem 1017 of the semiconductor laser device 1013 into contact with the recessed portion 1027 or the heat dissipating member 1031, the semiconductor laser device 1013 and the holding member 1015 ) And the contact area of the heat dissipating member 1031 can be increased, and heat generated by the semiconductor laser device 1013 can be efficiently released to the outside.

In addition, in the first embodiment of the present invention, an example of an embodiment in which the inner diameters of all the concave portions 1027 are formed according to the outer diameter of the semiconductor laser device 1013 has been described, but in the present invention, the concave portions For at least one of (1027), a form in which the inner diameter is formed according to the outer diameter of the semiconductor laser device 1013 is also included.

In addition, in the first embodiment of the present invention, an example of the form in which the depths of all the concave portions 1027 are formed according to the thickness of the semiconductor laser device 1013 has been described, but in the present invention, the concave portions For at least one of (1027), a form in which the depth is formed according to the thickness of the semiconductor laser device 1013 is also included.

[Heating member]

The heat dissipation member 1031 is attached to the front surface and the rear surface of the holding member 1015 by means such as fastening with screws or bonding with an adhesive, respectively. As the heat dissipation member 1031, metal materials such as aluminum, copper, and stainless steel can be used. The heat radiation member 1031 has a plurality of fins.

A heat-radiating resin or the like can be applied between the heat-radiating member 1031 and the holding member 1015. In this way, the heat generated by the semiconductor laser device 1013 can be released to the outside more efficiently.

The heat dissipation member 1031 is firmly pressing the stem 1017 of the semiconductor laser device 1013, and the semiconductor laser device 1013 is capable of pressing the stem 1017 by the heat dissipation member 1031. , Held by the holding member 1015.

A through hole 1033 is provided in the heat dissipation member 1031 provided on the front surface of the holding member 1015. The through hole 1033 is formed so as to pass through the through hole 1029 provided in the holding member 1015. The cap 1021 of the semiconductor laser device 1013 disposed in the concave portion 1027 on the front surface of the holding member 1015 is inserted into the through hole 1033.

The emission light of the semiconductor laser device 1013 disposed in the concave portion 1027 of the front surface of the holding member 1015 passes through the through hole 1033 provided in the heat dissipation member 1031, and the holding member 1015 ), the light emitted from the semiconductor laser device 1013 disposed in the concave portion 1027 of the rear surface thereof is a through hole 1029 provided in the holding member 1015 and a through hole 1033 provided in the heat dissipating member 1031 It passes through and emits light from the front surface of the light source device 1011.

In the heat dissipation member 1031 provided on the rear surface of the holding member 1015, a groove 1035 for passing through a flexible cable 1037 connected to the lead pin 1023 of the semiconductor laser device 1013, etc. is provided. have.

In addition, in the first embodiment of the present invention, an example of a form in which the heat dissipation member 1031 is provided on both the front and rear surfaces of the holding member 1015 has been described, but in the present invention, the holding member A form in which the heat dissipating member 1031 is provided on at least one of the front and rear surfaces of the 1015 is also included.

[Etc]

In addition, although not shown in particular, in the light source device 1011 according to the first embodiment of the present invention, a condensing lens or the like that combines and emits light emitted from the plurality of semiconductor laser devices 1013 can be provided.

<2nd embodiment>

5 and 6 are schematic perspective views showing the appearance and configuration of a light source device according to the second embodiment, respectively. Fig. 7(a) is a schematic top view showing the semiconductor laser device according to the second embodiment, and Fig. 7(b) is a schematic cross-sectional view showing a cross section B-B in Fig. 7(a). Fig. 8(a) is a schematic top view enlarged and showing the structure of a part of the light source device according to the second embodiment, and Fig. 8(b) is a schematic top view showing the CC cross section in Fig. 8(a) It is a schematic cross-sectional view.

Hereinafter, in the direction along the optical axis of the light source device (in the direction of the optical axis), the side from which light is mainly emitted is set to the front, the opposite side is set to the rear, and the direction perpendicular to the optical axis is set to the horizontal direction. In addition, mainly, in each member, the front side of the light source device is set upward, and the rear side of the light source device is set downward.

As shown in Figs. 5 and 6, the light source device 2100 according to the second embodiment is mainly held second on the first holding member 2030, which holds a plurality of semiconductor laser devices, respectively. A support member 2031 is provided, and a first heat dissipation member 2050 and a second heat dissipation member 2051 are connected to each other in front and rear thereof. In this way, the first heat dissipation member 2050 and the second heat dissipation member 2051 are provided on the first holding member 2030 side and the second holding member 2031 side respectively, so that each holding member Heat can be dissipated and removed from (2030, 2031), and the heat dissipation of the semiconductor laser device is easily improved. Further, as a result, it becomes easy to downsize the light source device.

In addition, each holding member 2030, 2031 should just hold at least one semiconductor laser device. In addition, from the viewpoint of the heat dissipation of the semiconductor laser device and the miniaturization of the light source device, two holding members are preferable, but three or more holding members may be present. In addition, the holding members 2030 and 2031 and the holding members 2030 and 2031 and the heat dissipating members 2050 and 2051 are not limited to the form in which they are provided in contact with each other. Other members, such as an adhesive, may be interposed.

As shown in FIGS. 7A and 7B, each semiconductor laser device has a stem 2020. The stem 2020 includes an element mounting portion 2021 on which the semiconductor laser element 2015 is mounted, a terminal 2022 electrically connected to the semiconductor laser element 2015, and an upper surface 2024 of the element mounting portion 2021. It has a base part 2023 which holds on the) side and exposes and holds the terminal 2022 on the lower surface 2025 side. Moreover, the base part 2023 may hold the element mounting part 2021 integrally with itself and hold|maintain.

Here, as shown in FIGS. 8A and 8B, one semiconductor laser device held by the first holding member 2030 is referred to as the first semiconductor laser device 2010. In addition, one semiconductor laser device held by the second holding member 2031 is referred to as the second semiconductor laser device 2011. In addition, one semiconductor laser device held by the second holding member 2031 separated from the second semiconductor laser device 2011 is referred to as the third semiconductor laser device 2012. In addition, one semiconductor laser device held by the first holding member 2030 apart from the first semiconductor laser device 2010 is referred to as the fourth semiconductor laser device 2013. In addition, each semiconductor laser device is fixed to the holding members 2030 and 2031 by press-fitting into the concave portion 3035 to be described later, bonding with an adhesive member as described later, welding, or the like.

And, as shown in Figs. 8(a) and (b), the second holding member 2031 has a window portion 2033 that emits light from the first semiconductor laser device 2010, and 1 Light emitted from the semiconductor laser device 2010 can be efficiently extracted to the outside of the light source device. The window portion 2033 is provided corresponding to all semiconductor laser devices held by the first holding member 2030. In addition, although the "window part" is mainly a through hole, it may be a portion capable of transmitting light emitted from each semiconductor laser device to the outside of the light source device. For example, a light-transmitting member such as resin or glass may be provided on the window portion, and the light-transmitting member may be provided in contact with a semiconductor laser device inserted in the window portion.

In addition, as shown in Figs. 8(a) and (b), the second holding member 2031 is viewed from the light emitting side (that is, front or upper), and the second semiconductor laser device 2011 is 1 The second semiconductor laser device 2011 is held so as to overlap a part of the semiconductor laser device 2010. That is, this refers to a state in which a part of the first semiconductor laser device 2010 is positioned immediately behind a part of the second semiconductor laser device 2011 when viewed from the front. In addition, at this time, what overlaps as viewed from the light emitting side is mainly a portion constituting the outermost side of the semiconductor laser device in the lateral direction, in this example, the stem 2020, and more specifically the base portion 2023.

As described above, in the light source device 2100 according to the second embodiment, the holding member for holding the semiconductor laser device is used as the plurality of members 2030 and 2031 for holding the semiconductor laser devices 2010 and 2011, respectively. Divide and overlap them. Thereby, the interval between the semiconductor laser devices 2010 and 2011 in the horizontal direction can be easily made smaller than the width of the semiconductor laser devices 2010 and 2011 in the horizontal direction. Accordingly, the plurality of semiconductor laser devices 2010 and 2011 are densely arranged in the horizontal direction, and the light source device can be downsized. Further, since the first semiconductor laser device 2010 and the second semiconductor laser device 2011 are held apart from each other in the optical axis direction, high heat dissipation properties of the respective semiconductor laser devices 2010 and 2011 can be ensured. At this time, in most cases, the distance between the first semiconductor laser device 2010 and the second semiconductor laser device 2011 in the optical axis direction becomes larger than the distance in the horizontal direction. That is, the plurality of semiconductor laser devices 2010 and 2011 can be disposed in a positional relationship that is dense in the lateral direction and sparse in the optical axis direction. Accordingly, the diffusion of light emitted from the light source device 2100 can be suppressed, and thus the miniaturization of an optical system disposed in front of the light source device can be achieved.

Hereinafter, a preferred configuration of the light source device 2100 will be described.

As shown in FIG. 8B, the 1st holding member 2030 and the 2nd holding member 2031 are provided with the recessed part 3035, respectively. In addition, at least a part of the stem 2020 of the first semiconductor laser device 2010 is accommodated in the concave portion 3035. Further, at least a part of the stem 2020 of the second semiconductor laser device 2011 is accommodated in the concave portion 3035. Thereby, it is easy to increase the bonding area between the semiconductor laser devices 2010 and 2011 and the holding members 2030 and 2031, and the heat dissipation of the semiconductor laser devices 2010 and 2011 is easily improved. In addition, the concave portion 3035 needs only to be able to accommodate at least a part of the base portion 2023 of the stem 2020 of the semiconductor laser device, but a member holding heat generated from the semiconductor laser devices 2010 and 2011 ( In order to conduct efficiently by 2030, 2031, it is preferable to accommodate all of the base portion 2023 of the stem. Further, the concave portion 3035 may accommodate all of the base portion 2023 and the cap 2028 of the stem of the semiconductor laser device. In addition, it is preferable that the shape of the concave portion 3035 substantially follows the shape of the base portion 2023 of the stem in order to install the semiconductor laser device 2010 with high precision. The bottom surface of the concave portion 3035 has a good flat surface. The side surface of the concave portion 3035 may be substantially perpendicular to the bottom surface, but may be an inclined surface with a large upper opening diameter (eg, 5° or more and 45° or less). The depth of each concave portion 3035 in one holding member may be substantially the same or may be different. In addition, the concave portion 3035 is not an essential configuration for the holding members 2030 and 2031, and the holding members 2030 and 2031 may be held in such a manner that the semiconductor laser device is mounted on its flat upper surface.

As shown in FIG. 8B, a part of the first semiconductor laser device 2010 is inserted into the window portion 2033 of the second holding member 2031. Thereby, the 1st semiconductor laser device 2010 is brought close to the 2nd holding member 2031 and it is easy to hold|maintain, and it is easy to downsize a light source device. In addition, it is easy to conduct heat generated from the first semiconductor laser device 2010 to the second holding member 2031 and further to the second heat dissipating member 2051, and the heat dissipation property of the first semiconductor laser device 2010 Easy to increase. In addition, the portion of the first semiconductor laser device 2010 inserted into the window portion 2033 of the second holding member is mainly a part of the cap 2028, but may be up to the base portion 2023 of the stem, and furthermore All of the semiconductor laser devices 2010 may be used.

As shown in FIG. 8(b), the window portion 2033 of the second holding member 2031 includes a narrow portion 2037 whose width is smaller than that of the first semiconductor laser device 2010. . In the configuration in which the second holding member 2031 is provided on the first holding member 2030, the first semiconductor laser device 2010 does not pass through the window portion 2033 of the second holding member 2031. Instead, it can be installed in the first holding member 2030. For this reason, the narrow part 2037 can be provided in the window part 2033. Therefore, since it is easy to maintain a large heat capacity of the second holding member 2031, heat generated from the semiconductor laser devices 2010 and 2011 is transferred to the second holding member 2031, and furthermore, the second heat dissipating member ( 2051), and the heat dissipation property of the semiconductor laser devices 2010 and 2011 is easily improved. The narrow portion 2037 may be a part of the window portion 2033 or the entire window portion 2033. In addition, the "width" here can also be said to be a "diameter", and it is the size in a lateral direction, and refers mainly to the maximum value.

As shown in FIGS. 8A and 8B, the light source device 2100 includes a second heat dissipation member 2051 connected to the second holding member 2031. The second heat dissipation member 2051 has a window portion 2053 and can efficiently take out light emitted from the second semiconductor laser device 2011 to the outside of the light source device. A part of the second semiconductor laser device 2011 is inserted into the window portion 2053 of the second heat dissipating member. Thereby, it is easy to bring the 2nd semiconductor laser device 2011 close to and hold|maintain the 2nd heat-radiating member 2051, and it is easy to downsize a light source device. In addition, it is easy to conduct heat generated from the second semiconductor laser device 2011 to the second heat dissipating member 2051, and the heat dissipation property of the second semiconductor laser device 2011 is easily improved. In addition, the portion of the second semiconductor laser device 2011 inserted into the window portion 2053 of the second heat dissipation member is mainly a part of the cap 2028, but may extend to the base portion 2023 of the stem, and furthermore, the second All of the semiconductor laser devices 2011 may be used. In addition, the window portion 2053 is provided corresponding to all semiconductor laser devices held by the second holding member 2031. In addition, the second heat dissipation member 2051 also has another window portion provided corresponding to all semiconductor laser devices held by the first holding member 2030.

As shown in FIG. 8(b), the light source device 2100 includes an adhesive member 2040 provided corresponding to each semiconductor laser device. Then, the lower surface 2025 of the base portion 2023 of the stem 2020 of each semiconductor laser device is adhered to the holding members 2030 and 2031 by an adhesive member 2040. Thus, by passing through the adhesive member 2040, the adhesion between the semiconductor laser devices 2010 and 2011 and the holding members 2030 and 2031 is improved, and the heat generated from the semiconductor laser devices 2010 and 2011 is retained. It is possible to conduct efficient conduction to (2030, 2031), and the heat dissipation of the semiconductor laser devices 2010 and 2011 can be improved. Further, in addition to the lower surface 2025 of the base portion of the stem of each semiconductor laser device, the side surface 2026 is also adhered to the holding members 2030 and 2031 by an adhesive member 2040. Thereby, heat generated from the semiconductor laser devices 2010 and 2011 is easily conducted through the adhesive member 2040 by the holding members 2030 and 2031, and the heat dissipation property of the semiconductor laser devices 2010 and 2011 Can be higher. Further, the upper surface 2024 of the base portion of the stem of the semiconductor laser device 2011 may be bonded to the second heat dissipating member 2051 by an adhesive member 2040. Thereby, the base portion 2023 of the stem of the semiconductor laser device 2011 is sandwiched between the second holding member 2031 and the second heat dissipating member 2051 and adhered to both members. Therefore, the heat generated from the semiconductor laser device 2011 can be conducted more efficiently by the second heat dissipating member 2051 via the adhesive member 2040, thereby further enhancing the heat dissipation of the semiconductor laser device 2011. I can.

In addition, as described above, the semiconductor laser devices 2010 and 2011 are firmly adhered to the holding members 2030 and 2031 by the adhesive member 2040, making it difficult to remove the semiconductor laser devices 2010 and 2011. Thus, it is possible to prevent the semiconductor laser devices 2010 and 2011 from being useful for other light source devices. In addition, the stem may have a concave portion provided on a lower surface and/or a side surface of the base portion, and an adhesive member may be inserted into the concave portion and provided. The semiconductor laser device can be firmly bonded by the holding member due to the anchoring effect of the bonding member inserted into the concave portion of the stem. Therefore, removal of the semiconductor laser device can be made more difficult.

As shown in FIGS. 8A and 8B, the second holding member 2031 shows the third semiconductor laser device 2012 from the light emitting side, and the third semiconductor laser device 2012 The stem 2020 is held so that it overlaps a part of the stem 2020 of the first semiconductor laser device 2010. Thereby, the plurality of semiconductor laser devices 2010, 2011, and 2012 are arranged more densely in the horizontal direction, so that the light source device can be more easily miniaturized. In addition, as for the 1st holding member 2030, when the 4th semiconductor laser device 2013 is seen from the light emitting side, the stem 2020 of the 4th semiconductor laser device 2013 is the 2nd semiconductor laser device 2011 It is held so that it overlaps with a part of the stem (2020) of. Thereby, a plurality of semiconductor laser devices 2010, 2011, 2012, and 2013 are arranged more densely in the horizontal direction, so that the light source device is more easily miniaturized. In addition, in order to equalize heat dissipation, the semiconductor laser device is preferably arranged regularly. For example, the semiconductor laser device can be arranged in a lattice point or radially at substantially equal intervals when viewed from the light emitting side. Specifically, as shown, the semiconductor laser device held by the first holding member 2030 and the semiconductor laser device held by the second holding member 2031 are vertically and horizontally viewed from the light emitting side. There are some that are arranged alternately.

In addition, as shown in Figs. 7(a), (b) and Figs. 8(a) and (b), the semiconductor laser devices 2010 and 2011 are optical components to which light is incident from the semiconductor laser element 2015 ( 2027 and a cap 2028 for holding the optical component 2027 and sealing the semiconductor laser element 2015 are provided. Such semiconductor laser devices 2010 and 2011 maintain the relative positional relationship between the semiconductor laser element 2015 and the optical component 2027 by increasing the heat dissipation property, and it is easy to maintain excellent optical properties. In particular, when the semiconductor laser devices 2010 and 2011 include a collimator lens, that is, the optical component 2027 is a collimator lens or includes it, it becomes possible to emit parallel light, and the optical properties of the light source device 2100 are almost It is possible to change the installation position of the semiconductor laser devices 2010 and 2011 in the optical axis direction without affecting them, and it is easy to take the arrangement of the semiconductor laser devices 2010 and 2011 having excellent heat dissipation properties.

<Third embodiment>

Fig. 9(a) is a schematic perspective view showing the appearance of the light source device according to the third embodiment, and Fig. 9(b) is a schematic perspective view showing the configuration thereof. 9(a) and (b), the light source device 2150 according to the third embodiment is not provided with the heat dissipation members 2050 and 2051, except that the light source device 2150 according to the second embodiment is It has substantially the same configuration as the light source device 2100. Like this light source device 2150, the heat dissipation members 2050 and 2051 may be omitted, or a smaller light source device may be used. In this case, the rear surface (lower surface) of the first holding member 2030 and the front surface (upper surface) of the second holding member 2031 each constitute an outer surface of this light source device 2150. Accordingly, other heat dissipation members can be directly connected by forming screw holes on the rear side of the first holding member 2030 or on the front side of the second holding member 2031.

As described above, the semiconductor laser devices according to the second and third embodiments of the present invention have been described, but according to these, the light source device can be downsized while securing high heat dissipation properties of each semiconductor laser device.

That is, in recent years, for example, as a light source for a projector, a light source device in which a plurality of blue-emitting semiconductor laser devices are arranged in a matrix is used (for example, see Japanese Patent Application Laid-Open No. 2012-8549).

However, as described in Japanese Patent Application Laid-Open No. 2012-8549, when a plurality of semiconductor laser devices are densely arranged on the same plane, heat generated from each semiconductor laser device is easily stored, and light output It is liable to cause deterioration of and optical characteristics. On the other hand, in order to improve this, if the semiconductor laser devices are arranged with a large distance between them, the light source device and the optical system installed in front of the light source device become large.

Therefore, the semiconductor laser devices according to the second and third embodiments of the present invention have been made in view of these circumstances, and are relatively small and have heat dissipation properties of each semiconductor laser device while holding a plurality of semiconductor laser devices. It is an object of providing an excellent light source device.

Hereinafter, each component will be described.

(Semiconductor laser device (2015))

The semiconductor laser element should just include an element structure composed of various semiconductors. Among them, a nitride semiconductor capable of emitting ultraviolet light or short-wavelength visible light (mainly represented _{by the} general formula In _x Al _y Ga _1-xy N (0≤x≤1, 0≤y≤1, x+y≤1)) Although the laser device using is excellent in directivity, since heat is relatively easily stored, it is particularly suitable in the present invention. In the case of a light source device including a plurality of semiconductor laser elements (or semiconductor laser devices), the emission wavelengths (luminescence colors) of each semiconductor laser device (or each semiconductor laser device) may be substantially the same as each other, for example, red, They may be different from each other, such as green or blue.

(Stem (2020))

The stem is a member to which a semiconductor laser element is adhered. From the viewpoint of thermal conductivity, the element mounting portion and the base portion of the stem are composed mainly of metals such as copper, steel (carbon steel, etc.), aluminum, gold, or alloys thereof, excluding portions that electrically insulate the terminal. It is desirable. In addition, it is preferable that the stem is plated with gold as the outermost surface. As for the stem, the shape of a substantially circular shape as seen from the upper surface of the base part, or a part of which is cut (called a "I-cut stem" or a "D-cut stem") or the like can be used. Further, the terminal is mainly a rod-shaped lead terminal, but may be a film-shaped or columnar electrode formed through a through hole or a via of the base portion.

(Optical parts (2027))

Optical components include optical elements such as lenses, mirrors, prisms, optical filters, diffusion plates, and cover glasses, as well as wavelength conversion members in which a fluorescent substance is mixed with these optical elements or translucent members, or nonlinear optics for laser rod or wavelength conversion. Optical crystals such as crystals, or optical fibers can be used alone or in combination. Further, the optical component is in contact with the positioning protrusion provided on the inner surface of the cap, and is fixed to the cap by application of an adhesive member (second adhesive member), thermal compression bonding, press fitting, or the like.

In addition, fluorescent substances include yttrium-aluminum-garnet (YAG) revived with cerium, nitrogen-containing alumino silicate reactivated with europium and/or chromium (CaO-Al ₂ O ₃ -SiO ₂ ), europium It is possible to use a silicate ((Sr, Ba) ₂ SiO ₄ ) that has been reactivated. For example, a combination of a semiconductor laser element that emits blue light and a fluorescent material that emits yellow light by absorbing a part of the blue light can provide a light source device that emits white light.

(Cap (2028))

The cap is a member that is connected to the base portion of the stem, holds the optical component, and seals and protects the semiconductor laser element, but may be omitted depending on the configuration and use of the light source device. The cap should have a structure capable of transmitting light emitted from the optical component in the optical axis direction. The cap can be configured using the same material as the holding member described later. The shape of the cap may be a cylindrical shape or a box shape. When viewed from an upper surface, it is preferable to expose the periphery of the upper surface of the base portion of the stem, and to substantially follow the shape of the base portion of the stem.

(Retention support member (2030, 2031))

The holding member is a member that holds the semiconductor laser device. The holding member may have various shapes, and includes a plate shape, a block shape, a box shape, a cylindrical shape, an L shape, a T shape, and the like. As the base material of the holding member, aluminum, aluminum alloy, copper, copper alloy, stainless steel (austenitic, ferritic, martensitic), steel (carbon steel for mechanical structure, rolled steel for general structure), superinvar, cobar, etc. I can. In particular, the holding member is preferably aluminum or an aluminum alloy having excellent thermal conductivity. Subsequently, copper or copper alloy is also preferable. When the holding member is made of aluminum, aluminum alloy, or steel as a base material, in order to improve the bonding property with the bonding member, it is preferable that plating is applied to the surface in contact with the bonding member. Plating can be made of a single layer film such as gold, tin, nickel, silver, palladium, or copper, or a multilayer film thereof. In particular, it is preferable from the viewpoint of bonding property to have tin or silver at least on the outermost surface. Further, ceramics such as aluminum oxide, aluminum nitride, and silicon carbide can also be used. In addition, resin materials such as polycarbonate resin, acrylic resin, polyamide resin, epoxy resin, ABS, ASA, and PBT can be used. For these resin materials, magnesium oxide, aluminum oxide, aluminum nitride, silicon carbide, graphite, titanium oxide You may use what added a filler, such as. Further, the holding member may have a pin formed on its outer surface.

(Adhesive member (2040))

The adhesive member is a member that adheres the semiconductor laser device to the holding member. The adhesive member can be heated and softened by a heating device or the like, then cooled and solidified (hereinafter, referred to as "softening-solidified"), whereby the semiconductor laser device can be adhered to the holding member. Before softening, the adhesive member may be either a solid shape or a paste shape. It is preferable that the adhesive member contains metal. For example, gold, tin, silver, bismuth, copper, indium, antimony, etc. are mentioned. Moreover, the adhesive member may contain a resin or an organic solvent at least before softening, but it is preferable to contain the said metal as a main component after softening-solidification. Specifically, various solders and metal pastes, such as tin-bismus type, tin-copper type, tin-silver type, and gold-tin type, are mentioned. Further, a resin to which a filler such as magnesium oxide, aluminum oxide, aluminum nitride, silicon carbide, or graphite is added may be used. When the adhesive member is heated once and softened-solidified, it is preferable that the softening point (softening temperature) becomes higher than that before softening. In particular, the difference in softening point is preferably 30°C or higher, more preferably 50°C or higher, and even more preferably 100°C or higher. As such an adhesive member (before softening), a tin-based solder to which copper powder is added (for example, RAM series manufactured by Senju Metal Industries), or a sintered paste containing silver particles and an organic solvent such as alcohol (after solidification It mainly becomes a sintered body of porous silver particles; for example, see WO2009/090915) and the like. In addition, "softening" as used herein can be defined as causing a liquefaction or a decrease in viscosity due to melting of a constituent material, glass transition, etc., even if the adhesive member before softening is in a solid shape or a paste shape. Depending on the constituent material of the adhesive member, the melting point can also be used.

(Heating member (2050, 2051))

The heat dissipation member is connected to the holding member and is a member capable of promoting heat dissipation from the holding member as well as the semiconductor laser device. The radiating member is a radiator or a radiating plate, and in order to effectively radiate heat, it is preferable to have a fin. The shape of the pin includes a plate shape, a needle rod shape, a cylindrical shape, and a spiral shape. The heat dissipation member can be configured using the same material as the holding member described above. In addition, the heat dissipation member can radiate heat more effectively by providing a fan in its vicinity. In addition, the heat dissipation member is not an essential component and may be omitted.

As described above, the first to third embodiments of the present invention have been described, but all of these embodiments are based on the technical idea of the present invention, and the "retaining support member" and the "semiconductor" in one embodiment Each of the constituent elements such as "laser device" is related to them in other embodiments.

[Example 1]

Next, the light source device according to the first embodiment of the present invention will be described.

The light source device according to the first embodiment of the present invention specifically specifies the configuration of the light source device 1011 according to the first embodiment of the present invention as follows. In addition, the optical axis directions of the plurality of semiconductor laser devices 1013 are assumed to be parallel to each other.

A=20mm, B=8mm, F=5mm

Here, A is a relative position in the optical axis direction of the adjacent semiconductor laser device 1013 when the holding member 1015 is viewed from the front surface, and B is the holding member 1015 when viewed from the front surface It is a relative position in the direction perpendicular to the optical axis direction of two adjacent semiconductor laser devices 1013, and F is the focal length of the collimator lens 1025.

In the light source device according to the first embodiment of the present invention, when the holding member 1015 is viewed from the front surface, two adjacent semiconductor laser devices 1013 have a relative position in the optical axis direction perpendicular to the optical axis direction. It is more than twice as large as the relative position in the direction.

Accordingly, according to the light source device according to Embodiment 1 of the present invention, a plurality of semiconductor laser devices are densely arranged in a direction perpendicular to the direction in which light is emitted from the light source device, while the direction in which light is emitted from the light source device In this case, since it is sparsely arranged, heat generated by the semiconductor laser device can be efficiently released to the outside, and a light source device with good heat dissipation using a plurality of semiconductor laser devices that can withstand use in an image irradiation device such as a projector is provided. It becomes possible to provide. Further, the light source device can be downsized (the width (horizontal width) of the light source device in a direction perpendicular to the direction in which light is emitted from the light source device can be reduced). Further, the planar area of light emitted from the light source device can be made small, and light control such as condensing light thereafter is easy.

[Example 2]

The light source device of the second embodiment is a light source for a projector having the configuration of the example shown in Figs. 5 and 6 and is configured as follows.

The light source device of Example 2 is provided with two holding members (LD holders) overlapping each other and fixed with screws. Each of the two holding members is obtained by plating tin on the outer surface of an aluminum alloy base material.

The rear holding member is a substantially plate-shaped member having a thickness of 12.5 mm, and a circular opening having a diameter of 9.1 mm, a concave portion having a depth of 7 mm, and an elliptical opening provided at the bottom of the concave portion to penetrate the lead terminal. It has 8 holes made of a pair of holes. These holes are arranged in 4 rows and 4 columns, the distance between the centers of the two holes in each row is 15 mm, the spacing of each row is 7.5 mm, the arrangement of the holes in the odd and even rows is the same, and the odd number The holes in the row and even rows are deviated by 7.5 mm in the transverse direction. Further, the rear holding member has eight oval-shaped through holes for passing a conductive wire connected to the lead terminal of the semiconductor laser device held by the front holding member. Further, the rear holding member extends and holds the circuit board electrically connected to the lead terminal of each semiconductor laser device in the horizontal direction.

The front holding member is a substantially plate-shaped member having a thickness of 8.5 mm, and a circular opening having a diameter of 9.1 mm, a concave portion having a depth of 2 mm, and an elliptical opening provided at the bottom of the concave portion for passing through the lead terminal. It has 8 holes made of a pair of holes. These holes are arranged in 4 rows and 4 columns so as to alternate with the holes in the rear holding member. Further, in the front holding member, a part of the cap of the semiconductor laser device held by the rear holding member is inserted, and a through hole (window portion) of a circular opening for passing light from the semiconductor laser device is formed. Have a dog This through hole is made up of a narrow portion having a diameter of 5.3 mm on the front (upper) side and 3.5 mm in length (depth), and a wide portion with a diameter of 7.5 mm on the rear (lower) side.

A semiconductor laser device is configured by mounting a semiconductor laser element on a stem and fixing a cap holding an optical component. The stem has a block-shaped element mounting portion, two lead terminals, and a disk-shaped base portion having a diameter of 9 mm and a thickness of 1.5 mm, in which gold plating was applied to the surface of the base material of the copper alloy, respectively. A nitride semiconductor laser element having a light emission center wavelength of 455 nm and a rated output of 3 W is adhered to the element mounting portion of the stem via a sub-mount. The cap is a cylindrical member made of stainless steel with a diameter of 6.85 mm, and the flange-shaped portion of the lower end thereof is welded to the upper surface of the base portion of the stem. On the upper part of the cap, an optical component having an NA of 0.5 being a collimator lens made of BK7 is fixed by press fitting. Further, on the side surface of the base portion of the stem, a concave portion (cutout) having a substantially triangular shape as viewed from the upper surface is provided which penetrates from the upper surface to the lower surface.

And, in each concave portion of the two holding members, the base portion of the stem of the semiconductor laser device described above is accommodated, and the bottom and side surfaces of the base portion of the semiconductor laser device, and the bottom and side surfaces of the concave portions respectively opposed thereto, It is adhered by an adhesive member interposed therebetween. Moreover, the adhesive member is also inserted into the recessed part of the side surface of the base part of a stem. In addition, the adhesive member is a tin-bismus type solder.

Two heat dissipating members are provided so as to sandwich the overlapping two holding members from the front and the rear. Each of the two heat dissipating members is made of an aluminum alloy, and is a heat dissipating plate provided with plate-shaped fins protruding outwardly arranged and fixed to the holding member with screws. Further, the central portion of the front heat dissipation member has no fins, and a through hole of 16 circular openings for emitting light from each semiconductor laser device to the outside of the device is provided. In addition, a part of the cap of the semiconductor laser device held by the holding member in the front is inserted into the through hole in half of the through hole.

Even when the light source device described above is driven for a long time, the temperature increase of the semiconductor laser device can be suppressed, and stable optical output and optical properties such as an optical axis can be maintained.

(bookkeeping)

The present invention has the following bookkeeping.

A first holding member for holding a first semiconductor laser device having a stem, and a second holding member for holding a second semiconductor laser device having a stem, and provided on the first holding member, The second holding member has a window that emits light from the first semiconductor laser device, and when viewed from the light exit side, the stem of the second semiconductor laser device is a stem of the first semiconductor laser device. A light source device holding the second semiconductor laser device so as to overlap a part of the device.

In the light source device according to the bookkeeping, the first holding member and the second holding member have a concave portion, and at least a part of the stem of the first semiconductor laser device and the stem of the second semiconductor laser device It is preferable that at least a part is accommodated in the concave portion.

In the light source device according to the bookkeeping, it is preferable that at least a part of the first semiconductor laser device is inserted into a window portion of the second holding member.

In the light source device according to the bookkeeping, it is preferable that the window portion of the second holding member includes a narrow portion whose width is smaller than that of the first semiconductor laser device.

In the light source device according to the bookkeeping, it is preferable that the light source device has a window portion and includes a heat radiating member connected to the second holding member, and at least a part of the second semiconductor laser device is inserted into a window portion of the heat radiating member. Do.

In the light source device according to the bookkeeping, the second holding member separates a third semiconductor laser device having a stem from the second semiconductor laser device, and when viewed from the light emitting side, the third semiconductor It is preferable that the stem of the laser device is held so as to overlap a part of the stem of the first semiconductor laser device.

In the light source device according to the appendix, the stem includes an element mounting portion on which a semiconductor laser element is mounted, a terminal electrically connected to the semiconductor laser element, and holding the element mounting portion on an upper surface side, and further comprises the terminal. It is preferable that it has a base portion exposed to the lower surface side and held, and the lower surface of the base portion of the stem of the semiconductor laser device is adhered to the holding member by an adhesive member.

In the light source device according to the above note, it is preferable that the semiconductor laser device includes a collimator lens.

The light source device according to the present invention can be suitably used for light sources such as projectors, laser processing machines, optical recording/reproducing devices, displays, printers, optical communication devices, and various lighting sources such as headlights of automobiles.

As described above, embodiments and examples of the present invention have been described, but the description thereof relates to an example of the present invention, and the present invention is not limited at all by these descriptions.

1011: light source device
1013: semiconductor laser device
1131: semiconductor laser device
1132: semiconductor laser device
1015: holding member
1017: stem
1019: semiconductor laser device
1021: cap
1023: lead pin
1025: collimator lens
1027: recess
1029: through hole
1031: heat dissipation member
1033: through hole
1035: Home
1037: flexible cable
2010, 2011, 2012, 2013: semiconductor laser device
2010: First semiconductor laser device
2011: Second semiconductor laser device
2012: 3rd semiconductor laser device
2013: 4th semiconductor laser device
2015: Semiconductor laser device
2020: Stem
2021: device mounting unit
2022: terminal
2023: base part
2024: top
2025: if
2026: side
2027: optical component
2028: cap
2030, 2031: holding member
2030: first holding member
2031: second holding member
2033: Prostitute
2037: narrow section
2035: recess
2040: adhesive member
2050, 2051: heat dissipation member
2050: first heat dissipation member
2051: second heat dissipation member
2053: Prostitute
2100, 2150: light source device

Claims (14)

A first holding member for holding a first semiconductor laser device having a stem,
Holding a second semiconductor laser device having a stem, comprising a second holding member provided on the first holding member,
The first holding member has a concave portion in which at least a part of the stem of the first semiconductor laser device is accommodated,
The second holding member has a concave portion in which at least a part of the stem of the second semiconductor laser device is accommodated, has a window portion that emits light from the first semiconductor laser device, and viewed from the window portion side, Holding the second semiconductor laser device so that the stem of the second semiconductor laser device overlaps a part of the stem of the first semiconductor laser device,
A light source device comprising a window portion of the second holding member including a narrow portion whose width is smaller than that of the first semiconductor laser device. The method of claim 1,
The semiconductor laser device is a light source device including a collimator lens. delete The method of claim 1,
At least a part of the first semiconductor laser device is inserted into a window portion of the second holding member. delete The method of claim 1,
It has a window portion, and includes a heat dissipation member connected to the second holding member,
At least a part of the second semiconductor laser device is inserted into a window portion of the heat dissipating member. The method of claim 1,
The second holding member separates the third semiconductor laser device having a stem from the second semiconductor laser device, and when viewed from the window side, the stem of the third semiconductor laser device is the first semiconductor laser. A light source device that is held so as to overlap a part of the device's stem. The method of claim 1,
The stem includes an element mounting portion on which a semiconductor laser element is mounted, a terminal electrically connected to the semiconductor laser element, and a base holding the element mounting portion on the upper surface side and exposing the terminal to the lower surface side to hold it. Have wealth,
A light source device wherein a lower surface of the base portion of the stem of the semiconductor laser device is adhered to the holding member by an adhesive member. The method of claim 8,
The stem is provided with a concave portion on the lower surface and/or the side surface of the base portion,
The light source device is provided by retracting the adhesive member into the concave portion. The method of claim 8,
The holding member is plated on a surface in contact with the adhesive member,
The adhesive member is a light source device comprising a metal. The method of claim 9,
The holding member is plated on a surface in contact with the adhesive member,
The adhesive member is a light source device comprising a metal. The method of claim 10,
The holding member is aluminum or an aluminum alloy,
At least the outermost surface of the plating is tin or silver,
The adhesive member is a solder. The method of claim 11,
The holding member is aluminum or an aluminum alloy,
At least the outermost surface of the plating is tin or silver,
The adhesive member is a solder. The method of claim 1,
The semiconductor laser device is a light source device comprising a nitride semiconductor laser element.

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