KR102171871B1 - Magnetron sputtering apparatus and thin film deposition method using the same - Google Patents

Abstract

The present invention relates to a magnetron sputtering apparatus and a thin film deposition method using the same, and the sputtering apparatus according to an embodiment includes a chamber providing a space for performing a thin film deposition process on a substrate through a sputtering method, and a substrate within the chamber. It may include a supporting anode module and at least one cathode module each coupled to at least one or more targets disposed at a position opposite to the substrate, and at least one target may be an Sr ₂ V ₂ O ₇ sputtering target.

Description

Magnetron sputtering device and thin film deposition method using the same {MAGNETRON SPUTTERING APPARATUS AND THIN FILM DEPOSITION METHOD USING THE SAME}

The present invention relates to a sputtering apparatus and a thin film deposition method using the same, and more particularly, to a technical idea of depositing a thin film using an RF magnetron sputtering method.

Materials that are transparent and excellent in conductivity are usefully used in electrical devices, displays, and energy devices. However, since the two characteristics of transparency and conductivity are mutually exclusive, it is difficult to manufacture a transparent conductor (TC) that uses electrons or positive holes as charge carriers.

The use of a wide range of transparent conductor oxide (TCO) materials began with indium oxide (In2O3) in the 1960s, and In2O3:Sn (ITO) has been the most commonly used transparent electrode material since the 1970s.

TCO materials that are widely used in recent years include SnO2:X(X: F, Sb), ITO(InSnO), ZnO:X(X: Al, Ga), etc., and these have a band gap energy of 3 eV or more, and in the visible light region. It is transparent, and the specific resistance is 10 ^-3 Ωcm or less.

In general, the TCO material exhibits n-type conductivity, the average charge carrier concentration is 1.5x1021 cm ^{- 3} , and the charge carrier concentration is 50-100 times smaller than that of general metals. The electrical mobility is relatively large as 100 cm ² V ^-1 s ^{- 1} , but the specific resistance is 50-500 times larger than that of Ag, Au, Al, and Cu, which have excellent electrical properties. Excellent transparent conductive oxide materials are generally composed of s-orbitals in which wave functions overlap each other, and thus have excellent conductivity.

Among the TCO, the excellent material most often used in the industry is ITO doped with Sn (Tin, tin). ITO has high optical transparency and high electrical conductivity at the same time. However, as well as economic problems due to the scarcity of the indium (In) element, the specific resistance of the ultra-thin film is large, and the development of a new TCO material is required.

Tin oxide (SnO ₂ ) is cheap and chemically stable, but has a high resistance and a relatively high process temperature. Zinc oxide (ZnO) has excellent electrical and optical properties similar to that of ITO, but is chemically unstable.

Perovskite oxide metals have correlated electrons, and these electrons renormalize the mass of carriers by the interactions between them. That is, as the mass increases, it becomes transparent.

Specifically, perovskite oxide metal has a high electrical conductivity (σ), and in order to be transparent in the visible region, light absorption and reflection in the visible region must be minimized, and high carrier concentration and small carrier scattering are required. need.

Ideally, in order to be transparent in the visible light region, the free carrier reflection edge determined by the screened plasma energy (wp) should be less than 1.75eV, which is caused by the interband transition. Strong light absorption should be greater than 3.25 eV. The shielded plasma energy may be derived through Equation 1 below.

[Equation 1]

According to Equation 1, the free carrier reflection tip can be minimized by appropriately adjusting the ratio (n/m*) of the free carrier concentration n and the effective mass m*. In addition, electrical conductivity (σ, electrical conductivity) can be derived through Equation 2 below.

[Equation 2]

According to Equation 2, n/m* must be increased to increase the electrical conductivity (σ). Therefore, it can be seen that n/m* is an important parameter of the transparent conductive material. That is, the electrical conductivity should be increased by increasing n/m*, but there is a problem that the size of n/m* should be limited so that the free carrier reflection tip determined by plasma energy is smaller than the visible light region.

Korean Patent Laid-Open Patent No. 10-2017-0126724 "Sputtering device and film forming method using the same"

An object of the present invention is to provide a sputtering device capable of effectively depositing an optimized SrVO ₃ thin film as a transparent electrode material without containing expensive indium, and a thin film deposition method using the same.

The present invention is to provide a sputtering device capable of easily depositing an SrVO ₃ thin film by an RF magnetron sputtering method at a low temperature of 400° C. or less, and a thin film deposition method using the same.

The sputtering apparatus according to an embodiment includes a chamber providing a space for performing a thin film deposition process on a substrate through a sputtering method, an anode module supporting a substrate in the chamber, and at least one or more disposed at a position opposite to the substrate. It includes at least one or more cathode modules each coupled to the target, and the at least one target may be an Sr ₂ V ₂ O ₇ sputtering target.

According to one side, the thin film may be a strontium vanadate (SrVO ₃ ) thin film.

According to one side, the sputtering method may be an RF magnetron sputtering method.

According to one side, the anode module may control the position of the substrate so that the distance between at least one target is within 10 cm to 20 cm.

According to one side, a sputtering method in the chamber 2Х10 ^{- 6} torr to 4Х10 ^- creating an environment having a degree of vacuum in the ⁶ torr range, and hydrogen (H ₂₎ and argon (Ar) is injected into the reaction gas mixture, at least in the chamber Plasma can be formed around one or more targets.

The method for forming a thin film using a sputtering apparatus according to an embodiment includes the steps of supporting a substrate loaded into a chamber by an anode module, and at least one target each coupled to at least one cathode module in the chamber and disposed at a position opposite to the substrate. And depositing a thin film on the substrate through a sputtering method using, and at least one target may be an Sr ₂ V ₂ O ₇ sputtering target.

According to one side, the thin film may be a strontium vanadate (SrVO ₃ ) thin film.

According to one side, the sputtering method may be an RF magnetron sputtering method.

According to one side, in the step of supporting the substrate, the position of the substrate may be controlled so that the distance between at least one target in the anode module is within 10 cm to 20 cm.

According to one side, depositing a thin film 2Х10 in the ^chamber to create an environment having a degree of vacuum in the ⁶ torr to 4Х10 ^-6 torr range and the introduction of hydrogen (H ₂₎ as the reaction gas mixture of argon (Ar) Plasma can be formed around the target.

According to one side, the plasma is applied to both ends of the anode module and at least one cathode module at a chamber pressure within the range of 4 mtorr to 8 mtorr, while the sputtering power within the range of 50 W to 100 W is applied to the reaction body at a partial pressure within the range of 5 to 15 sccm. It can be formed by controlling.

According to one side, it may further include heat-treating the substrate on which the thin film is deposited at a temperature within a temperature of 100°C to 400°C within a range of 1 to 5 hours.

According to an embodiment, it is possible to effectively deposit an SrVO ₃ thin film optimized as a transparent electrode material without containing expensive indium.

According to one embodiment, the SrVO ₃ thin film can be easily deposited by the RF magnetron sputtering method at a low temperature of 400° C. or less.

1 is a view for explaining a sputtering apparatus according to an embodiment.
2A to 2B are views for explaining an SrVO ₃ thin film formed on a substrate through a sputtering apparatus according to an embodiment.
3 is a view for explaining the XRD analysis result of the SrVO ₃ thin film.
4 is a view for explaining the transmittance of the SrVO ₃ thin film.
5 is a diagram illustrating a method of forming a thin film using a sputtering device according to an exemplary embodiment.

Specific structural or functional descriptions of the embodiments according to the concept of the present invention disclosed in this specification are exemplified only for the purpose of describing the embodiments according to the concept of the present invention, and embodiments according to the concept of the present invention They may be implemented in various forms and are not limited to the embodiments described herein.

Since the embodiments according to the concept of the present invention can apply various changes and have various forms, the embodiments will be illustrated in the drawings and described in detail herein. However, this is not intended to limit the embodiments according to the concept of the present invention to specific disclosed forms, and includes changes, equivalents, or substitutes included in the spirit and scope of the present invention.

Terms such as first or second may be used to describe various elements, but the elements should not be limited by the terms. The above terms are only for the purpose of distinguishing one component from other components, for example, without departing from the scope of rights according to the concept of the present invention, the first component may be named as the second component, Similarly, the second component may also be referred to as a first component.

When a component is referred to as being "connected" or "connected" to another component, it is understood that it may be directly connected or connected to the other component, but other components may exist in the middle. Should be. On the other hand, when a component is referred to as being "directly connected" or "directly connected" to another component, it should be understood that there is no other component in the middle. Expressions describing the relationship between components, for example, "between" and "just between" or "directly adjacent to" should be interpreted as well.

The terms used in the present specification are only used to describe specific embodiments and are not intended to limit the present invention. Singular expressions include plural expressions unless the context clearly indicates otherwise. In the present specification, terms such as "comprise" or "have" are intended to designate that the specified features, numbers, steps, actions, components, parts, or combinations thereof exist, but one or more other features or numbers, It is to be understood that the presence or addition of steps, actions, components, parts, or combinations thereof, does not preclude the possibility of preliminary exclusion.

Unless otherwise defined, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by a person of ordinary skill in the art to which the present invention belongs. Terms as defined in a commonly used dictionary should be interpreted as having a meaning consistent with the meaning in the context of the related technology, and should not be interpreted as an ideal or excessively formal meaning unless explicitly defined in this specification. Does not.

Hereinafter, embodiments will be described in detail with reference to the accompanying drawings. However, the scope of the patent application is not limited or limited by these embodiments. The same reference numerals in each drawing indicate the same members.

1 is a view for explaining a sputtering apparatus according to an embodiment.

Referring to FIG. 1, the sputtering apparatus 100 according to an exemplary embodiment can effectively deposit an optimized SrVO ₃ thin film as a transparent electrode material without containing expensive indium (In). In addition, the SrVO ₃ thin film can be easily deposited by the RF magnetron sputtering method at a low temperature of 400° C. or less.

To this end, the sputtering apparatus 100 according to an embodiment may include a chamber 110, an anode module 120, and at least one or more cathode modules 130 and 140.

According to one side, the sputtering apparatus 100 controls a gas injection means for injecting a reactive body into the chamber 110 to perform a sputtering process, a pressure control means for controlling the pressure in the chamber 110, and a temperature in the chamber 110 It may further include a temperature control means and a power control means for applying sputter power to both ends of the anode module 120 and at least one cathode module (130, 140).

Since the gas injection means, pressure control means, temperature control means, and power control means according to an embodiment perform the same functions as those used in the known sputtering device, hereinafter, gas injection means, pressure control means, temperature control Detailed description of the means and the power control means will be omitted.

Specifically, the chamber 110 according to an embodiment may provide a space for performing a thin film deposition process on the substrate 121 through a sputtering method.

According to one side, the thin film formed on the substrate 121 may be a strontium vanadate (SrVO ₃ ) thin film.

The anode module 120 according to an embodiment may support the substrate 121 in the chamber 110. In addition, at least one or more cathode modules 130 may be coupled to at least one or more targets 131 and 141 disposed at a position opposite to the substrate 121, respectively.

In other words, the anode module 120 may function as a substrate holder supporting the substrate 121.

For example, the substrate 121 is a base substrate for depositing and forming a thin film, and the material is not specifically limited to a substrate used in the art, but silicon, glass, quartz, plastic, or metal foil and The same various materials can be used.

For a more specific example, as a plastic substrate, at least one of PET (Polyethylene terephthalate), PEN (Polyethylene naphthelate), PP (Polypropylene), PC (Polycarbonate), PI (Polyamide), TAC (Tri acetyl cellulose), and PES (Polyethersulfone) Including, or a flexible (Flexible) substrate including any one of aluminum foil (aluminum foil) and stainless steel foil (Stainlesssteel foil) may be used.

Meanwhile, at least one target 131 and 141 according to an embodiment may be an Sr ₂ V ₂ O ₇ sputtering target.

For example, each of the at least one target 131 and 141 may be a sputtering target having an Sr ₂ V ₂ O ₇ content of 99.5 wt%.

According to one side, the anode module 120 may control the position of the substrate 121 so that the distance between the at least one target 131 and 141 is within 10 cm to 20 cm.

For example, the anode module 120 may be controlled so that the distance between the substrate 121 from the intermediate point between the first target 131 and the second target 141 is located within 10 cm to 20 cm.

In addition, the anode module 120 may be controlled so that the distance between the first target 131 or the second target 141 and the substrate 121 is located within 10 cm to 20 cm.

Preferably, the distance between the substrate 121 and the at least one target 131 and 141 may be fixed to 15 cm.

According to one side, a sputtering method for depositing thin films on a substrate 121, a chamber 110 within 2Х10 ^{- 6} torr to 4Х10 ^- creating an environment having a degree of vacuum in the ⁶ torr range, and hydrogen into the chamber (H ₂₎ Plasma may be formed around at least one or more targets 131 and 141 by injecting a reactive body in which and argon (Ar) are mixed.

In other words, the sputtering apparatus within the chamber 100 according to one embodiment 2Х10 ^{- 6} torr to 4Х10 ^{- 6} by controlling a degree of vacuum in the torr range, injecting a reaction gas Sr ₂ V ₂ O ₇ target (131, 141) By forming a plasma around it, it is possible to easily deposit an SrVO ₃ thin film on the substrate 121.

That is, when the sputtering device 100 applies sputter power to both ends of the anode module 120 and at least one cathode module 130 and 140 to form a cathode on at least one or more targets 131 and 141, at least One or more of the targets 131 and 141 may provide a deposition material toward the substrate 121 located thereon.

According to one side, the reactor body in which hydrogen (H ₂ ) and argon (Ar) are mixed may be a gas derived through Equation 3 below.

[Equation 3]

Here, H2 may be the volume of hydrogen gas, and Ar may be the volume of argon gas.

In other words, according to Equation 3, the mixed reactor body may be a gas in which argon (Ar) gas is 75% and argon (Ar) gas is mixed at a volume ratio of 25%.

According to one side, the anode module 120 supporting the substrate 121 in the sputtering process includes a first target 131 which is a region where plasma generated by the first target 131 and the second target 141 does not reach, and It may be formed between the second targets 141.

In general, plasma is generated on the first target 131 and the second target 141 by applying a voltage between the anode module 120 and the first cathode module 130 and the second cathode module 140. I can.

That is, in the sputtering apparatus 100 according to an embodiment, a high-density first plasma region formed on the first target 131 and a high-density first plasma region formed on the second target 141 in the chamber 110 2 A plasma region and a third plasma region having a low density formed between the first target 131 and the second target 141 may be included.

In the conventional sputtering method, the substrate 121 is placed in a high-density plasma region near where plasma is generated above the target, so that the plasma density generated between the substrate 121 and the target is constant, the concentration of electrons or reactive ions contained in the plasma. It is difficult to control and there is a problem in that thin film defects due to electrons are generated.

However, the sputtering apparatus 100 according to an embodiment can form a uniform thin film because the deposition process of the thin film proceeds in a low-density third plasma region with a low plasma density, and by reducing the concentration of electrons around the substrate Thin film defects caused by electrons can be suppressed.

According to one side, the sputtering apparatus 100 controls the concentration of electrons and reactive ions around the substrate 121 by controlling the plasma density applied to the substrate 121, thereby reducing the thickness of the thin film formed on the substrate 121. Can be controlled.

According to one side, the sputtering apparatus 100 may increase a deposition rate by depositing a thin film in a third plasma region having a low density formed between the first target 131 and the second target 141.

More specifically, the sputtering apparatus 100 may control the deposition rate of the thin film by adjusting a first distance in the horizontal direction between the first target 131 or the second target 141 and the substrate 121.

For example, a first distance in the horizontal direction between the first target 131 or the second target 141 and the substrate 121 may be 1 cm to 5 cm. If the first distance in the horizontal direction between the first target 131 or the second target 141 and the substrate 121 is 1 cm or less, there is a problem that the plasma density is too high and a defect is generated in the resistance change layer 150 , If the first distance d1 in the horizontal direction between the first target 131 or the second target 141 and the substrate 121 exceeds 5 cm, a problem of a decrease in the deposition rate may occur.

In addition, the sputtering apparatus 100 may control the deposition rate of the resistance change layer 150 by adjusting a second distance in the vertical direction between the first target 131 or the second target 141 and the substrate 121. have.

The plasma density may be adjusted according to a second distance (height) in the vertical direction between the first target 131 or the second target 141 and the substrate 121. For example, as the second distance in the vertical direction between the first target 131 and the second target 141 and the substrate 121 increases, the plasma density increases, and the first target 131 or the second target As the second distance in the vertical direction between the 141 and the substrate 121 increases, the plasma density may decrease.

For example, the second distance in the vertical direction between the first target 131 or the second target 141 and the substrate 121 may be 5 cm to 20 cm. If the second distance in the vertical direction between the first target 131 or the second target 141 and the substrate 121 is 5 cm or less, there is a problem that the plasma density is too high to generate a defect in the thin film, and the first target ( 131) or when the second distance in the vertical direction between the second target 141 and the substrate 121 exceeds 20 cm, a problem of a decrease in the deposition rate may occur.

2A to 2B are views for explaining an SrVO ₃ thin film formed on a substrate through a sputtering apparatus according to an embodiment.

2A to 2B, reference numeral 210 denotes a SrVO ₃ thin film formed on a substrate through the sputtering apparatus of FIG. 1, and reference numeral 220 denotes a crystal of strontium vanadate (SrVO ₃ ) in the SrVO ₃ thin film. Shows the structure.

Specifically, according to reference numeral 210, the sputtering apparatus according to an embodiment may form an SrVO ₃ thin film on a substrate by an RF magnetron sputtering method using an Sr ₂ V ₂ O ₇ sputtering target.

Preferably, the sputtering apparatus according to an embodiment may deposit and form an SrVO ₃ thin film with a thickness of 66 nm on a substrate.

를 나타내며, 가띠는 산소 2p궤도에서 나오고, 바나디움의 5d 궤도는 산소원자에 의한 결정장(Crystal field) 효과에 의해서 e_g 그룹의 이중항 상태(duplet state)와 t_2g 그룹의 삼중항상태(Triplet state) 로 나뉘며, 여기서 e_g 그룹이 전도띠를 이룬다.According to reference numeral 220, the SrVO ₃ crystal has a cube-shaped perovskite structure, and the lattice constant is c=3.842.

, And the gait comes out of the oxygen 2p orbit, and the 5d orbit of vanadium is e _g due to the crystal field effect by the oxygen atom. It is divided into the doublet state of the group and the triplet state of the t _2g group, where the e _g group forms a conduction band.

SrVO ₃ crystal has a weak transition between bands in the visible light region, has a 3d ¹ configuration, has 1 free electron per unit cell, and forms a simple Fermi liquid system. In addition, electrons have a strong correlation, so spectral weight transfer occurs.

The sheet resistance of the SrVO ₃ crystal at room temperature is 6Ω/sq (thickness 45 nm) and 150 Ω/sq (thickness 4 nm). That is, the electrical conductivity values are 3.5X10 ⁴ Scm ^-1 and 1.6X10 ⁴ Scm ^{- 1} , respectively, which are superior to ITO.

The carrier concentration in the case of SrVO ₃ is 2.26X10 ²² cm ^{- 3} , which is about ten times larger than ITO (One order of magnitude), but in the case of SrVO ₃ , they are electrons with a strong correlation, and the band width is determined by the direction of d electrons. It was small and the effective mass was large, and the electric mobility was about ten times smaller (One order of magnitude). However, the small mobility was offset by the large carrier concentration, and the electrical conductivity was found to be better compared to ITO.

That is, the sputtering device according to an embodiment does not contain expensive indium (In) through the RF magnetron sputtering method, and can effectively grow an SrVO ₃ thin film showing excellent performance as a transparent electrode material such as electric devices, displays, and energy devices. I can.

3 is a view for explaining the XRD analysis result of the SrVO ₃ thin film.

Referring to FIG. 3, reference numeral 300 denotes the intensity of the crystalline peak measured from the 2theta-omega scan of XRD (X-Ray Diffractometry) for the SrVO ₃ thin film.

According to reference numeral 300, it was found that the SrVO ₃ thin film formed by deposition through the sputtering apparatus according to an embodiment exhibits excellent crystallinity.

4 is a view for explaining the transmittance of the SrVO ₃ thin film.

Referring to FIG. 4, reference numeral 400 denotes light transmission characteristics of the SrVO ₃ thin film according to the wavelength of light.

According to FIG. 4, it was found that the SrVO ₃ thin film formed by deposition through the sputtering apparatus according to an embodiment exhibits excellent light transmission characteristics in the visible light band (400 to 760 nm).

5 is a diagram illustrating a method of forming a thin film using a sputtering device according to an exemplary embodiment.

In other words, FIG. 5 is a view for explaining a method of forming a thin film using a sputtering device according to an embodiment described with reference to FIGS. 1 to 4, and then through a sputtering device according to an embodiment of the contents described with reference to FIG. 5. Descriptions overlapping with the descriptions will be omitted.

Referring to FIG. 5, in step 510, in the method of forming a thin film according to an exemplary embodiment, an anode module may support a substrate loaded into a chamber.

According to one side, in step 510, in the method of forming a thin film according to an embodiment, the position of the substrate may be controlled so that a distance between at least one target in the anode module is within 10 cm to 20 cm.

For example, the anode module may be controlled so that the distance between the substrates from the intermediate point between the first target and the second target is located within 10 cm to 20 cm.

In addition, the anode module may be controlled so that the distance between the first target or the second target and the substrate is located within 10 cm to 20 cm.

Preferably, in step 510, in the method of forming a thin film according to an embodiment, the distance between the target and the substrate is fixed at 15 cm, and the temperature of the substrate may be maintained at 400°C.

Next, in step 520, in the method of forming a thin film according to an embodiment, a thin film is formed on a substrate through a sputtering method using at least one target that is respectively coupled to at least one cathode module in a chamber and disposed at a position opposite to the substrate. Can be deposited.

According to one side, at least one target may be an Sr ₂ V ₂ O ₇ sputtering target. In addition, the thin film deposited on the substrate through the Sr ₂ V ₂ O ₇ sputtering target may be a strontium vanadate (SrVO ₃ ) thin film.

According to one side, a sputtering method for depositing a thin film may be an RF magnetron sputtering method.

According to one side, thin film forming method according to one embodiment in step 520 is to 4Х10 2Х10 ^-6 torr in the ^chamber, and creating an environment having a degree of vacuum in the range of ⁶ torr, hydrogen (H ₂₎ and argon (Ar) are mixed Plasma can be formed around the target by injecting the reactant body.

Preferably, in step 520, the method of forming a thin film according to an embodiment may create an environment having a vacuum degree of ³ Х10 ^-6 torr in the chamber.

According to one side, the method for forming a thin film according to an embodiment in step 520 is a reactor body in a state in which sputter power within the range of 50W to 100W is applied to both ends of the anode module and at least one cathode module at a chamber pressure within the range of 4 mtorr to 8 mtorr. The plasma can be formed by controlling the partial pressure within the range of 5 sccm to 15 sccm.

Preferably, in step 520, the method for forming a thin film according to an embodiment is to apply a sputter power of 70 W at a chamber pressure of 6 mtorr, and a reactor body in which argon (Ar) gas is mixed in a volume ratio of 25% is subjected to a partial pressure of 10 sccm. Plasma can be formed by controlling it, and an SrVO ₃ thin film can be deposited for 5 hours through the formed plasma.

According to one side, in step 530, the method of forming a thin film according to an embodiment may heat-treat a substrate on which a thin film is deposited at a temperature within a temperature of 100°C to 400°C within a range of 1 to 5 hours.

Preferably, in step 530, the method of forming a thin film according to an embodiment is a heat treatment process at a temperature of 400° C. for 2 hours at the same partial pressure as the gas partial pressure applied in the sputtering process of the SrVO ₃ thin film deposited on the substrate to a thickness of 66 nm. Can be done.

Consequently, using the present invention, it is possible to effectively deposit a SrVO3 thin film optimized as a transparent electrode material without containing expensive indium.

In addition, the SrVO3 thin film can be easily deposited by the RF magnetron sputtering method at a low temperature of 400°C or less.

The apparatus described above may be implemented as a hardware component, a software component, and/or a combination of a hardware component and a software component. For example, the devices and components described in the embodiments include, for example, a processor, a controller, an arithmetic logic unit (ALU), a digital signal processor, a microcomputer, a field programmable array (FPA), It can be implemented using one or more general purpose computers or special purpose computers, such as a programmable logic unit (PLU), a microprocessor, or any other device capable of executing and responding to instructions. The processing device may execute an operating system (OS) and one or more software applications executed on the operating system. In addition, the processing device may access, store, manipulate, process, and generate data in response to the execution of software. For the convenience of understanding, although it is sometimes described that one processing device is used, one of ordinary skill in the art, the processing device is a plurality of processing elements and/or a plurality of types of processing elements. It can be seen that it may include. For example, the processing device may include a plurality of processors or one processor and one controller. In addition, other processing configurations are possible, such as a parallel processor.

The software may include a computer program, code, instructions, or a combination of one or more of these, configuring the processing unit to behave as desired or processed independently or collectively. You can command the device. Software and/or data may be interpreted by a processing device or to provide instructions or data to a processing device, of any type of machine, component, physical device, virtual equipment, computer storage medium or device. , Or may be permanently or temporarily embodyed in a transmitted signal wave. The software may be distributed over networked computer systems and stored or executed in a distributed manner. Software and data may be stored on one or more computer-readable recording media.

As described above, although the embodiments have been described by the limited drawings, various modifications and variations are possible from the above description to those of ordinary skill in the art. For example, the described techniques are performed in a different order from the described method, and/or components such as a system, structure, device, circuit, etc. described are combined or combined in a form different from the described method, or other components Alternatively, even if substituted or substituted by an equivalent, an appropriate result can be achieved.

Therefore, other implementations, other embodiments, and claims and equivalents fall within the scope of the claims to be described later.

100: sputtering device 110: chamber
120: anode module 121: substrate
130, 140: cathode module 131,141: target

Claims (12)

A chamber providing a space for performing a thin film deposition process on a substrate through a sputtering method;
An anode module supporting the substrate in the chamber, and
At least one cathode module each coupled to at least one target disposed at a position opposite to the substrate
Including,
The at least one target includes a first target and a second target,
A first distance, which is a distance in a horizontal direction between the first target or the second target and the substrate, is 1cm to 5cm,
A second distance, which is a vertical distance between the first target or the second target and the substrate, is 5cm to 20cm,
The at least one target is a sputtering device, characterized in that the Sr ₂ V ₂ O ₇ sputtering target. The method of claim 1,
The thin film is characterized in that the thin film is strontium vanadate (SrVO ₃ )
Sputtering device. The method of claim 1,
The sputtering method is an RF magnetron sputtering method, characterized in that
Sputtering device. delete The method of claim 1,
The sputtering method
Within the chamber 2Х10 ^{- 6} torr to 4Х10 ^- hydrogen (H ₂₎ in the chamber creating an environment having a degree of vacuum in the ⁶ torr range, the argon ambient (Ar) is injected into the reaction gas mixture of the at least one target To form a plasma in
Sputtering device. The anode module supporting a substrate loaded into the chamber, and
Depositing a thin film on the substrate through a sputtering method using at least one target each coupled to at least one cathode module in the chamber and disposed at a position opposite to the substrate
Including,
The at least one target includes a first target and a second target,
A first distance, which is a distance in a horizontal direction between the first target or the second target and the substrate, is 1cm to 5cm,
A second distance, which is a vertical distance between the first target or the second target and the substrate, is 5cm to 20cm,
The at least one target is characterized in that the Sr ₂ V ₂ O ₇ sputtering target
A method of forming a thin film using a sputtering device. The method of claim 6,
The thin film is characterized in that the thin film is strontium vanadate (SrVO ₃ )
A method of forming a thin film using a sputtering device. The method of claim 6,
The sputtering method is an RF magnetron sputtering method, characterized in that
A method of forming a thin film using a sputtering device. delete The method of claim 6,
Depositing said thin film is 2Х10 in the chamber ^{- 6} torr 4Х10 to create an environment having a degree of vacuum in the range ^-6 torr, and hydrogen (H ₂₎ and argon (Ar) is injected into the reaction gas mixture, the target To form a plasma around it
A method of forming a thin film using a sputtering device. The method of claim 10,
The plasma is controlled by a partial pressure within the range of 10 sccm while applying sputter power within the range of 50W to 100W to both ends of the anode module and the at least one cathode module at a chamber pressure within the range of 4 mtorr to 8 mtorr. Forming
A method of forming a thin film using a sputtering device. The method of claim 6,
Further comprising the step of heat-treating the substrate on which the thin film is deposited within the range of 1 hour to 5 hours at a temperature within 100 to 400 ℃
A method of forming a thin film using a sputtering device.

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