KR102158683B1 - 외부 메모리로 신경망들 증강 - Google Patents

외부 메모리로 신경망들 증강 Download PDF

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KR102158683B1
KR102158683B1 KR1020187017730A KR20187017730A KR102158683B1 KR 102158683 B1 KR102158683 B1 KR 102158683B1 KR 1020187017730 A KR1020187017730 A KR 1020187017730A KR 20187017730 A KR20187017730 A KR 20187017730A KR 102158683 B1 KR102158683 B1 KR 102158683B1
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external memory
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알렉산더 벤자민 그라비스
이보 다니헬카
티모시 제이미스 알렉산더 할리
말콤 케빈 캠벨 레이놀즈
그레고리 던컨 웨인
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딥마인드 테크놀로지스 리미티드
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    • G06N3/044Recurrent networks, e.g. Hopfield networks
    • G06N3/0442Recurrent networks, e.g. Hopfield networks characterised by memory or gating, e.g. long short-term memory [LSTM] or gated recurrent units [GRU]
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    • G06N3/06Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons
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KR1020187017730A 2015-12-10 2016-12-09 외부 메모리로 신경망들 증강 Active KR102158683B1 (ko)

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US201562265912P 2015-12-10 2015-12-10
US62/265,912 2015-12-10
PCT/US2016/066020 WO2017100711A1 (en) 2015-12-10 2016-12-09 Augmenting neural networks with external memory

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KR102158683B1 true KR102158683B1 (ko) 2020-09-22

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EP (1) EP3371747B1 (enExample)
JP (1) JP6651629B2 (enExample)
KR (1) KR102158683B1 (enExample)
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CN110377342B (zh) * 2019-06-10 2022-08-30 平安科技(深圳)有限公司 基于卷积神经网络的显存处理方法、装置及存储介质
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CN108431832B (zh) 2022-09-13
US20170169332A1 (en) 2017-06-15
WO2017100711A1 (en) 2017-06-15
CN108431832A (zh) 2018-08-21
KR20180091850A (ko) 2018-08-16
US20250315676A1 (en) 2025-10-09
JP2018537788A (ja) 2018-12-20
JP6651629B2 (ja) 2020-02-19
EP3371747B1 (en) 2023-07-19
US10832134B2 (en) 2020-11-10
EP3371747A1 (en) 2018-09-12
US20210117801A1 (en) 2021-04-22
US12299575B2 (en) 2025-05-13

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