KR102156365B1 - Electrostatic chuck having heater and method of manufacturing the same - Google Patents

Abstract

The present invention relates to an electrostatic chuck provided with a heater capable of stably maintaining temperature uniformity by improving the diffusion of heat generated from the heater, and a manufacturing method thereof.
An electrostatic chuck provided with a heater according to an embodiment of the present invention is an electrostatic chuck provided inside a substrate processing apparatus and on which a substrate is placed, comprising: a dielectric material having an electrode therein; A heater pattern formed on a lower surface of the dielectric; A thermal diffusion sealing layer formed by sintering on a lower surface of the dielectric material while covering the heater pattern; And a base body bonded to a lower surface of the thermal diffusion sealing layer via a bonding layer.

Description

Electrostatic chuck equipped with a heater and its manufacturing method {ELECTROSTATIC CHUCK HAVING HEATER AND METHOD OF MANUFACTURING THE SAME}

The present invention relates to an electrostatic chuck equipped with a heater and a method for manufacturing the same, and more particularly, to an electrostatic chuck equipped with a heater capable of stably maintaining temperature uniformity by improving the diffusion of heat generated from the heater, and a method of manufacturing the same. About.

In general, substrate processing apparatuses refer to apparatuses that deposit a film on a wafer or etch a film deposited on a semiconductor substrate. A film is formed and etched through such a substrate processing apparatus to produce semiconductor devices, flat panel display panels, optical devices and solar cells.

In the case of depositing a thin film on a wafer through a substrate processing apparatus, a number of unit processes such as chemical vapor deposition, sputtering, photolithography, etching, and ion implantation are performed after placing the wafer inside a chamber that provides a space for processing the wafer. A predetermined film is formed on the wafer surface through a method of performing and processing sequentially or repeatedly.

1 is a configuration diagram showing a general substrate processing apparatus. The substrate processing apparatus includes a chamber 10 that provides a space for processing a wafer W, and a wafer W is placed under the chamber 10. A substrate placing unit 20 is provided, and a gas injection unit 30 is provided on the substrate placing unit 20 to spray a process gas for deposition or etching of a thin film. In this case, as the substrate placing unit 20, an electrostatic chuck for chucking or dechucking a wafer using electrostatic force is generally used.

In order to proceed with the process of processing the wafer W in the substrate processing apparatus, the wafer W is chucked to the substrate placing unit (hereinafter, referred to as "electrostatic chuck") 20 inside the chamber 10. After processing the wafer W, the process of dechucking is repeated several times for processing in the next step.

The electrostatic chuck (ESC; 20) is a wafer support that fixes the wafer (W) by using the electrostatic force caused by the Jensen-Rahbek effect (A. Jehnson & K. Rahbek's Force). In response to the trend of manufacturing technology, it is a device used throughout the semiconductor device manufacturing process by replacing a vacuum chuck or a mechanical chuck. In particular, in the dry etching process using plasma, the role of the lower electrode for the RF upper electrode installed on the upper chamber In addition, an inert gas is supplied to the rear side of the wafer to be processed at high temperature (about 150 to 200°C) or a separate water cooling member is installed so that the temperature of the wafer can be kept constant.

To be more specific about the use of the electrostatic chuck 20, when a wafer W is loaded into the chamber 10 and power is applied to the electrode 21 embedded in the electrostatic chuck 20, the electrostatic chuck 20 ) Is generated on the surface of the chucking operation to securely fix the wafer (W) is performed. In this state, the surface of the wafer W is processed inside the chamber 10, the power supplied to the electrode 21 is cut off after the processing is completed, and the wafer W is separated from the electrostatic chuck 20. Dechucking is performed.

Meanwhile, in the recent electrostatic chuck, a heater pattern is formed as a means for uniformly heating a wafer for the purpose of improving various process efficiency. In addition, thermal diffusion means are also provided to maintain a uniform temperature distribution by the heater pattern.

Such an electrostatic chuck having a heater and a heat diffusion means is implemented and used in various forms, and is largely divided into a separate type and an integral type.

FIG. 2 is a view showing a general separable electrostatic chuck, wherein the separable electrostatic chuck 40 includes a dielectric 40a in which an electrode 41 is embedded; A base body 40b having a cooling water flow hole 45 formed therein and formed of an aluminum material to which the dielectric material 40a is seated; The heater pattern 42 is formed and is made of an aluminum material that diffuses heat generated from the heater pattern 42, and the first bonding layer 44a and the second bonding layer 44a are formed between the dielectric 40a and the base body 40b. It consists of a heat diffusion plate 43 attached by the bonding layer 44b. At this time, the heater pattern 42 is implemented as a PI film heater. In this way, the separable electrostatic chuck 40 is manufactured by attaching the thermal diffusion plate 43 to the dielectric 40a and the base body 40b by the first bonding layer 44a and the second bonding layer 44b. Accordingly, the detachable electrostatic chuck 40 is easy to manufacture and has good temperature uniformity. However, the heat diffusion plate 43 made of aluminum serves as an antenna and thus has a large possibility of discharging plasma.

3 is a view showing a general integrated electrostatic chuck. The integrated electrostatic chuck 50 includes: a dielectric 50a in which an electrode 51 and a heater pattern 52 are embedded; The cooling water flow hole 55 is formed and formed of an aluminum material, so that the dielectric 50a is formed of a base body 50b that is attached and seated by the bonding layer 53. At this time, the dielectric 50a is implemented with Al ₂ O ₃ . In this way, the integral electrostatic chuck 50 is manufactured by integrally embedding the heater pattern 52 in the dielectric 50a. Accordingly, the integrated electrostatic chuck 50 has an advantage of excellent durability, but the temperature uniformity is worse than that of the separable electrostatic chuck 40, and the manufacturing cost is high.

Registered Patent No. 10-1574779 (2015.11.30)

The present invention provides an electrostatic chuck equipped with a heater capable of stably maintaining temperature uniformity by improving the diffusion of heat generated from the heater and a method of manufacturing the same.

An electrostatic chuck provided with a heater according to an embodiment of the present invention is an electrostatic chuck provided inside a substrate processing apparatus and on which a substrate is placed, comprising: a dielectric material having an electrode therein; A heater pattern formed on a lower surface of the dielectric; A thermal diffusion sealing layer formed by sintering on a lower surface of the dielectric material while covering the heater pattern; And a base body bonded to a lower surface of the thermal diffusion sealing layer via a bonding layer.

The thermal diffusion sealing layer is preferably formed by sintering a sealing mixture in which a glass forming agent, a melting accelerator, and a stabilizer are mixed.

It is preferable that the glass forming agent includes SiO ₂ , the melting accelerator includes K ₂ O, and the stabilizer includes at least one of Al ₂ O ₃ and BaO.

The thermal diffusion sealing layer is in wt%, C: 5 to 15%, O: 20 to 45%, Al: 5 to 20%, Si: 25 to 35%, K: 0.5 to 2.0%, Ba: 10.0% or less It is preferable to form a sealing mixture obtained by sintering the glass forming agent, the melting accelerator, and the stabilizing agent.

It is preferable that the thermal diffusion sealing layer has a resistivity of 1.0×10 ¹² Ω to 1.0×10 ¹³ Ω.

On the other hand, the manufacturing method of an electrostatic chuck equipped with a heater according to an embodiment of the present invention is a method of manufacturing an electrostatic chuck in which a substrate is placed inside a substrate processing apparatus, and the electrode is embedded therein using a ceramic material. Preparing a genome; Forming a heater pattern on one surface of the dielectric; Preparing a sealing mixture by mixing a glass forming agent, a melting accelerator, and a stabilizer; Applying the sealing mixture to one surface of the dielectric to cover the heater pattern; Forming a thermal diffusion sealing layer by extinguishing the sealing mixture; Preparing a base body using aluminum; And bonding the thermal diffusion sealing layer and the base body while forming a bonding layer between the thermal diffusion sealing layer and the base body using an adhesive.

In the step of preparing the sealing mixture, the glass forming agent used as the sealing mixture includes SiO ₂ , the melting accelerator includes K ₂ O, and the stabilizer is at least one of Al ₂ O ₃ and BaO It is preferable to include one.

In the step of preparing the sealing mixture, the sealing mixture is a weight %, C: 5 ~ 15%, O: 20 ~ 45%, Al: 5 ~ 20%, Si: 25 ~ 35%, K: 0.5 ~ 2.0 %, Ba: It is preferable to mix the glass forming agent, the melting accelerator, and the stabilizer so that it is 10.0% or less.

In the step of forming the thermal diffusion sealing layer, sintering of the sealing mixture is preferably performed at a temperature of 800 to 900° C. for 5 to 20 minutes.

In the step of forming the thermal diffusion sealing layer, it is preferable that the sintering temperature of the sealing mixture is increased at a rate of 10 to 30°C/min.

According to an embodiment of the present invention, the heat diffusion sealing layer that serves to uniformly diffuse heat generated from the heater pattern and at the same time protects the heater pattern is formed by sintering an overglaze material, thereby having excellent insulating properties. , Since the resistivity is stable, the effect of uniformly spreading the heat generated from the heater pattern can be expected.

In addition, by forming a thermal diffusion sealing layer by sintering the overglaze material and bonding it to the dielectric and the base body, it is possible to overcome the disadvantages of the detachable electrostatic chuck while maintaining the advantages of the conventional detachable electrostatic chuck. You can expect an effect.

1 is a configuration diagram showing a general substrate processing apparatus,
2 is a view showing a general detachable electrostatic chuck,
3 is a view showing a general integrated electrostatic chuck,
4 is a view showing an electrostatic chuck equipped with a heater according to an embodiment of the present invention,
5 is a view showing a method of manufacturing an electrostatic chuck equipped with a heater according to an embodiment of the present invention,
6 is a photograph of a thermal distribution of an electrostatic chuck body according to an embodiment,
7 is a cross-sectional SEM photograph of an electrostatic chuck body according to Comparative Examples and Examples,
8 is a photograph of thermal durability observation of an electrostatic chuck body according to Comparative Examples and Examples.

Hereinafter, embodiments of the present invention will be described in more detail with reference to the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but will be implemented in a variety of different forms. It is provided to inform you. In the drawings, the same reference numerals refer to the same elements.

4 is a view showing an electrostatic chuck equipped with a heater according to an embodiment of the present invention.

As shown in FIG. 4, an electrostatic chuck provided with a heater according to an embodiment of the present invention includes an electrostatic chuck body 110 in which an electrode 112 and a heater pattern 113 are embedded; It includes a base body 120 coupled to a lower surface of the electrostatic chuck body 110 by a bonding layer 130.

The electrostatic chuck body 110 is a means for chucking or dechucking the wafer W placed on the upper surface thereof by electrostatic force, and includes a dielectric 111 having an electrode 112 embedded therein; A heater pattern 113 formed on a lower surface of the dielectric 111; It includes a thermal diffusion sealing layer 114 formed by sintering on the lower surface of the dielectric 111 while covering the heater pattern 113.

The dielectric 111 is a means for directly placing the wafer W on the upper surface thereof, and the upper surface thereof is formed flat so that the wafer W is placed. In this case, an electrode 112 that generates an electrostatic force is provided inside the dielectric 111 to chuck or dechuck the wafer W.

The dielectric 111 may be implemented by stacking a plurality of plate or sheet-type dielectric materials for embedding the electrodes 112 and forming the electrodes between dielectric materials at predetermined positions. In this case, a ceramic material may be selectively used as the dielectric material forming the dielectric 111 so that the electrostatic force generated by the electrode 112 can pass smoothly. For example, there will be the dielectric 111 may be an Al ₂ O ₃ Al ₂ O ₃ material or a composite material such as _{Al 2 O 3 -TiC, Al 2} O 3 -SiC be used optionally.

The electrode 112 is formed of nickel (Ni), tungsten (W), etc. using any one of various methods capable of forming an electrode such as a screen printing method, thin film printing, electroless plating method, or sputtering method. .

Meanwhile, a heater pattern 113 is formed on the lower surface of the dielectric 111. The heater pattern 113 uses a material that generates heat by application of power, and, for example, any of stainless steel (SUS), Ag-Pt alloy, Ni-Cr alloy, tungsten (W), and inconel. It is preferable to form one.

Further, a thermal diffusion sealing layer 114 is disposed on the lower surface of the dielectric 111 to protect the heater pattern 113 while covering the heater pattern 113 while uniformly transferring heat generated from the heater pattern 113 to the dielectric. Is formed.

The thermal diffusion sealing layer 114 is preferably formed of a material having a resistivity of 1.0×10 ¹² Ω to 1.0×10 ¹³ Ω after sintering is completed in order to maintain uniform heat transfer and excellent withstand voltage. Preferably, the resistivity of the thermal diffusion sealing layer 114 is preferably formed of a material having a level of 1.0×10 ¹³ Ω. In particular, it is preferable that the resistivity of the thermal diffusion sealing layer 114 is uniform because there is little variation for each location and thickness.

To this end, the thermal diffusion sealing layer 114 may use an overglaze material. For example, the thermal diffusion sealing layer 114 may be formed by sintering a sealing mixture in which a glass forming agent, a melting accelerator, and a stabilizer are mixed. At this time, the glass forming agent may include SiO ₂ , the melting accelerator may include K ₂ O, and the stabilizer may include at least one of Al ₂ O ₃ and BaO. For example, the thermal diffusion sealing layer 114 is in weight%, C: 5 to 15%, O: 20 to 45%, Al: 5 to 20%, Si: 25 to 35%, K: 0.5 to 2.0%, Ba: It can be formed by sintering a sealing mixture in which the glass forming agent, the melting accelerator and the stabilizer are mixed so as to be 10.0% or less.

On the other hand, the base body 120 is a support for installing the electrostatic chuck body 110 in the interior of the chamber 10, and serves as a lower electrode in the chamber 10 if necessary, while the electrostatic chuck body A cooling hole 121 for cooling the wafer W placed in the 110 may be provided.

The base body 120 is formed in a disk shape with a flat top surface, and is formed of, for example, an aluminum material. Therefore, the electrostatic chuck body 110, more precisely, the lower surface of the thermal diffusion sealing layer 114 is bonded to the upper surface of the base body 120 using an adhesive. A bonding layer 130 is formed between the electrostatic chuck body 110 and the base body 120 by the adhesive used at this time.

An electrostatic chuck equipped with a heater according to an embodiment of the present invention configured as described above will be described with reference to the drawings.

5 is a view showing a method of manufacturing an electrostatic chuck equipped with a heater according to an embodiment of the present invention.

As shown in FIG. 5, in the method of manufacturing an electrostatic chuck equipped with a heater according to an embodiment of the present invention, first, a dielectric material 111 is prepared using a ceramic material. In this case, the dielectric 111 may be implemented by stacking a plurality of dielectric materials, which are ceramic materials in the form of plates or sheets, and forming electrodes 112 between dielectric materials at predetermined positions. A ceramic material that is used to implement the dielectric 111 is an Al ₂ O ₃ material or Al ₂ O ₃ Al ₂ O ₃ based composite materials, such as -TiC, Al ₂ O ₃ -SiC may be optionally used. In addition, the electrode 112 may be formed in various ways using materials such as nickel (Ni) and tungsten (W). The method of forming the electrode 112 is formed using any one of various methods capable of forming the electrode 112 such as a screen printing method, a thin film printing method, an electroless plating method, or a sputtering method.

When the dielectric 111 in which the electrode 112 is embedded is prepared, a heater pattern 113 is formed on one surface of the dielectric 111. The heater pattern 113 is formed by selecting any one of stainless steel (SUS), Ni-Cr alloy, tungsten (W), and inconel.

When the heater pattern 113 is formed on one surface of the dielectric 111, the heat generated from the heater pattern 113 is uniformly transmitted to the dielectric 111 while protecting the heater pattern 113 by covering and protecting it on one surface of the dielectric 111 The thermal diffusion sealing layer 114 is formed.

In order to form the thermal diffusion sealing layer 114, first, a sealing mixture for forming the thermal diffusion sealing layer 114 is prepared.

The sealing mixture is prepared by mixing a glass forming agent, a melting accelerator, and a stabilizer. At this time, the glass forming agent may include SiO ₂ , the melting accelerator may include K ₂ O, and the stabilizer may include at least one of Al ₂ O ₃ and BaO. For example, the sealing mixture is by weight %, C: 5 to 15%, O: 20 to 45%, Al: 5 to 20%, Si: 25 to 35%, K: 0.5 to 2.0%, Ba: 10.0% It may be prepared by mixing the glass forming agent, the melting accelerator and the stabilizer so as to be below.

Then, the prepared sealing mixture is applied to one surface of the dielectric 111 to cover the heater pattern 113 to prepare the heat diffusion sealing layer 114.

Subsequently, the sealing mixture is heat-treated in an oven (O) to ignite it, thereby completing the thermal diffusion sealing layer 114.

At this time, the sintering of the sealing mixture is preferably carried out for 5 to 20 minutes at a temperature of 800 to 900 ℃. In addition, the sintering temperature of the sealing mixture is preferably raised at a rate of 10 ~ 30 ℃ / min. Therefore, the resistivity of the thermal diffusion sealing layer, which is completed by sintering the sealing mixture, is 1.0×10 ¹² Ω to 1.0×10 ¹³ Ω.

When the preparation of the electrostatic chuck body 110 in which the heater pattern 113 is protected by the heat diffusion sealing layer 114 is completed, the base body 120 is prepared. At this time, the base body 120 is prepared by processing aluminum into a disk shape having a flat top surface.

In addition, before bonding the electrostatic chuck body 110 to the base body 120, the lower end of the thermal diffusion sealing layer 114 is processed to a desired thickness and roughness.

When the processing of the lower surface of the electrostatic chuck body 110 is completed, the electrostatic chuck body 110 is bonded to the upper surface of the base body 120 using an adhesive. In other words, the lower surface of the thermal diffusion sealing layer 114 of the electrostatic chuck body 110 is bonded to the upper surface of the base body 120 through a bonding layer 130 made of an adhesive.

Next, an example according to the present invention and a conventional comparative example are compared.

The embodiment targets an electrostatic chuck body manufactured using an overglaze material for the thermal diffusion sealing layer according to an embodiment of the present invention, and a comparative example uses a thermal diffusion sealing layer in the electrostatic chuck body as a conventional general glass ( Normal glass) material is used for electrostatic chuck body.

So, in the embodiment, the thermal diffusion sealing layer formed of an overglaze material is in wt%, C: 8.10%, O: 39.04%, Al: 17.75%, Si: 27.50%, K: 0.90%, and Ba: 6.71% Formed as. In addition, in the comparative example, the thermal diffusion sealing layer formed of a normal glass material was formed in wt%, C: 16.05%, O: 37.80%, Al: 18.84%, Si: 9.03%, and Y: 18.28%.

At this time, in Examples and Comparative Examples, a sintering process was performed at 850° C. for 10 minutes to form a thermal diffusion sealing layer.

First, an experiment was conducted to determine the degree of thermal diffusion of the electrostatic chuck body manufactured according to the embodiment.

In the state where the heater of the electrostatic chuck body manufactured according to the embodiment was operated, it was divided into inner, middle and outer sections along the diameter direction, and the temperature was measured at several points at equal intervals along the circumferential direction for each area. The results are shown in Table 1 and FIG. 6. 6 is a photograph of a thermal distribution of an electrostatic chuck body according to an embodiment.

division Inner Middle Outer 30PΔT(℃) Max(℃) 60.9 61.9 61.7
2.3 Min(℃) 59.8 60.4 59.6 ΔT(℃) 1.1 1.5 2.1 Average 60.5 61.0 60.5 0.5

As can be seen from Table 1, it was confirmed that the electrostatic chuck body according to the embodiment had a uniform temperature deviation for each area along the radial direction at a level of 1.1 to 2.1°C. In addition, as can be seen from Figure 6, it was confirmed that the temperature distribution was uniform even based on the circumferential direction.

Next, the cut surfaces of the electrostatic chuck body manufactured according to the Examples and Comparative Examples were observed. Examples and Comparative Examples were observed after performing the sintering process for the formation of the thermal diffusion sealing layer, and the results are shown in FIG. 7.

7 is a cross-sectional photograph of the body of the electrostatic chuck according to the Example and Comparative Example. In the case of the Comparative Example, it was confirmed that a crack (Boundary Fracture) occurred along the boundary in the thermal diffusion sealing layer. On the other hand, in the case of the embodiment, it was confirmed that the thermal diffusion sealing layer was stably formed. As can be seen from FIG. 6, it was confirmed that the embodiment according to the present invention has improved thermal durability compared to the conventional comparative example.

Next, electrical durability (insulation property, insulation property) of the electrostatic chuck body manufactured according to the Example and Comparative Example was observed.

Leak generated in the thermal diffusion sealing layer was observed while increasing the voltage from 0.1kV to 0.05kV for the electrostatic chuck body formed according to the Examples and Comparative Examples. As a result, in the case of the comparative example, a leak occurred at the moment when a voltage of 0.4kV was applied, and in the case of the example, a leak occurred at the moment when a voltage of 0.65kV was applied. As can be seen from this experiment, it was confirmed that the electrostatic chuck body according to the embodiment has improved electrical durability than the electrostatic chuck body according to the comparative example.

Next, the thermal durability of the electrostatic chuck main body manufactured according to the Examples and Comparative Examples was observed.

Brazing and heat treatment for subsequent processes were performed on the electrostatic chuck body manufactured according to Examples and Comparative Examples, and the results are shown in FIG. 8. At this time, the brazing conditions were experimental conditions of 820°C, 5°C/min, In Vacuum (Process Condition), and the heat treatment was performed at 450°C to 500°C, 15°C/sec, In Air, 60days, and the results are shown in FIG. Indicated.

8 is a photograph of thermal durability observation of an electrostatic chuck body according to Comparative Examples and Examples.

As can be seen from the results of FIG. 8, in the case of the comparative example, it was confirmed that most of the thermal diffusion sealing layers were damaged during brazing after sintering. In addition, in the case of the comparative example, it was confirmed that some heat diffusion sealing layers were damaged during heat treatment after sintering.

However, in the case of the embodiment, it was confirmed that no damage occurred to the thermal diffusion sealing layer even after brazing and heat treatment.

As can be seen from this experiment, it was confirmed that the electrostatic chuck body according to the embodiment has improved thermal durability than the electrostatic chuck body according to the comparative example.

Although the present invention has been described with reference to the accompanying drawings and the above-described preferred embodiments, the present invention is not limited thereto, but is limited by the claims to be described later. Therefore, those of ordinary skill in the art can variously modify and modify the present invention within the scope of the technical spirit of the claims to be described later.

110: electrostatic chuck body 111: dielectric
112: electrode 113: heater pattern
114: heat diffusion sealing layer 120: base body
121: cooling hole chamber 10: bonding layer

Claims (10)

As an electrostatic chuck provided inside a substrate processing apparatus and on which a substrate is placed,
A dielectric material having an electrode embedded therein;
A heater pattern formed on a lower surface of the dielectric;
A thermal diffusion sealing layer formed by sintering on a lower surface of the dielectric material while covering the heater pattern;
And a base body bonded to the lower surface of the thermal diffusion sealing layer via a bonding layer,
The thermal diffusion sealing layer is in wt%, C: 5 to 15%, O: 20 to 45%, Al: 5 to 20%, Si: 25 to 35%, K: 0.5 to 2.0%, Ba: 10.0% or less A heater, characterized in that it is formed by sintering a sealing mixture in which a glass forming agent including SiO ₂ , a melting accelerator including K ₂ O, and a stabilizer including at least one of Al ₂ O ₃ and BaO are mixed. Equipped electrostatic chuck.
delete delete delete The method according to claim 1,
The thermal diffusion sealing layer has a resistivity of 1.0×10 ¹² Ω to 1.0×10 ¹³ Ω.
A method of manufacturing an electrostatic chuck provided inside a substrate processing apparatus and on which a substrate is placed,
Preparing a dielectric having electrodes embedded therein using a ceramic material;
Forming a heater pattern on one surface of the dielectric;
Preparing a sealing mixture by mixing a glass forming agent, a melting accelerator, and a stabilizer;
Applying the sealing mixture to one surface of the dielectric to cover the heater pattern;
Forming a thermal diffusion sealing layer by extinguishing the sealing mixture;
Preparing a base body using aluminum;
Forming a bonding layer between the heat diffusion sealing layer and the base body using an adhesive, and bonding the heat diffusion sealing layer and the base body,
The sealing mixture prepared in the step of preparing the sealing mixture is weight %, C: 5 ~ 15%, O: 20 ~ 45%, Al: 5 ~ 20%, Si: 25 ~ 35%, K: 0.5 ~ 2.0 %, Ba: A heater comprising mixing a glass forming agent including SiO ₂ , a melting accelerator including K ₂ O, and a stabilizer including at least one of Al ₂ O ₃ and BaO so that it is 10.0% or less. Method of manufacturing an electrostatic chuck provided.
delete delete The method of claim 6,
In the step of forming the thermal diffusion sealing layer,
The method of manufacturing an electrostatic chuck with a heater, characterized in that the sintering of the sealing mixture is carried out at a temperature of 800 to 900° C. for 5 to 20 minutes.
The method of claim 9,
In the step of forming the thermal diffusion sealing layer,
The method of manufacturing an electrostatic chuck equipped with a heater, characterized in that the sintering temperature of the sealing mixture is raised at a rate of 10 to 30°C/min.

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