KR102117099B1 - Apparatus for processing substrate - Google Patents

Abstract

Provided is an apparatus for processing a substrate capable of avoiding a mode jump by facilitating variation of a frequency of a magnetron while using the magnetron as a power source. The apparatus for processing the substrate includes: a power source for providing power; an applicator using the power; a circulator module connected between the power source and the applicator to transfer the power; a small signal generator for generating a small signal to transmit the generated small signal to the power source through the circulator module; a memory for storing an avoidance condition of the power to avoid a mode jump; and a controller for receiving a command signal including a target output value to control the power source and controlling the small signal generator to transmit the small signal to the power source when the target output value corresponds to the avoidance condition.

Description

Substrate processing apparatus {Apparatus for processing substrate}

The present invention relates to a substrate processing apparatus.

A substrate processing apparatus using plasma generates plasma using a magnetron or a solid state driver as a power source. The solid state driver has a low individual output, so multiple solid state drivers are connected in parallel to produce a combined output. In addition, the solid state driver has a lower conversion efficiency (AC to RF conversion efficiency) than a magnetron and requires a high-level heat dissipation structure and is expensive.

On the other hand, the frequency of the magnetron is difficult to vary because oscillation and amplification are performed at the same time, while the solid state driver is easy to vary the frequency because oscillation and amplification are performed separately.

In addition, during the substrate processing process using plasma, a mode jump may occur when the output of the power source (specifically, a microwave oscillator) exceeds a predetermined range, and a stable plasma processing process is not performed. Therefore, the power source must be controlled within a range that avoids a condition (eg, a specific frequency) in which a mode jump can occur.

The problem to be solved by the present invention is to provide a substrate processing apparatus capable of avoiding a mode jump by facilitating a variable frequency of the magnetron while using the magnetron as a power source.

The problems of the present invention are not limited to the problems mentioned above, and other problems not mentioned will be clearly understood by those skilled in the art from the following description.

An aspect of the substrate processing apparatus of the present invention for achieving the above object is a power source that provides power; An applicator using the electric power; A circulator module connected between the power source and the applicator to transfer the power; A small signal generator which generates a small signal and transmits the small signal to the power source through the circulator module; A memory that stores the power avoidance condition that can avoid a mode jump; And a controller that receives a command signal including a target output value, controls the power source, and controls the small signal generator to transmit the small signal to the power source when the target output value corresponds to the avoidance condition. .

The memory further stores the safety condition of the power in which no mode jump occurs, and when the target output value corresponds to the safety condition, the controller prevents the small signal generator from generating the small signal.

The memory may further store a mode jump condition of the power at which a mode jump occurs.

The main frequency of power output from the power source may be changed by the small signal.

The power source may be a magnetron. When the target output value corresponds to the avoidance condition, the controller may further adjust at least one of the filament current and anode voltage of the magnetron.

A probe connected to the circulator module and sensing a mode jump in the applicator generated as the power condition changes, may further include a probe that provides a feedback signal to the controller.

Here, the probe may be an RF power probe or an electric field probe.

In addition, the circulator module includes a first circulator and a second circulator, a first node of the first circulator is connected to the power source, and a second node is connected to the second circulator, The fourth node of the second circulator may be connected to the second node of the first circulator, the fifth node may be connected to the applicator, and the sixth node may be connected to the probe.

The circulator module may further include a third circulator, a seventh node of the third circulator may be connected to the small signal generator, and an eighth node may be connected to a third node of the first circulator. . A dummy rod may be connected to the ninth node of the third circulator.

Another aspect of the substrate processing apparatus of the present invention for achieving the above object is: a power source that provides power; An applicator using the electric power; A circulator module connected between the power source and the applicator to transfer the power; A small signal generator connected to the circulator module; A probe connected to the circulator module and sensing a mode jump in the applicator generated as the power condition changes, thereby providing a feedback signal; And a controller that receives the feedback signal and controls the small signal generator to generate a small signal, wherein the small signal is transmitted to the power source through the circulator module, and the controller is the size of the small signal. Alternatively, the condition of the small signal from which the mode jump is avoided is found while changing the frequency.

After finding the condition of the small signal from which the mode jump is avoided, the controller stores the found condition of the small signal in memory.

The circulator module includes a first circulator and a second circulator, a first node of the first circulator is connected to the power source, a second node is connected to the second circulator, and the first The fourth node of the second circulator is connected to the second node of the first circulator, the fifth node is connected to the applicator, the sixth node is connected to the probe, and the small signal is the first circulator. The main frequency of power delivered to the power source through and output from the power source by the small signal may be changed.

The circulator module further includes a third circulator, a seventh node of the third circulator is connected to the small signal generator, and an eighth node is connected to a third node of the first circulator, A dummy load is connected to the ninth node, and the small signal may be transmitted to the power source through the third circulator and the first circulator.

The power source may be a magnetron.

Details of other embodiments are included in the detailed description and drawings.

1 is a block diagram illustrating a substrate processing apparatus according to an embodiment of the present invention.
FIG. 2 is a block diagram illustrating a probing unit in the substrate processing apparatus of FIG. 1.
3 is a flowchart illustrating a test operation of a substrate processing apparatus according to an embodiment of the present invention.
4 is a flowchart illustrating another test operation of the substrate processing apparatus according to an embodiment of the present invention.
5 is a block diagram illustrating a substrate processing apparatus according to another embodiment of the present invention.
6 is a block diagram illustrating a substrate processing apparatus according to another embodiment of the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. Advantages and features of the present invention, and methods for achieving them will be clarified with reference to embodiments described below in detail together with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but may be implemented in various different forms, and only the embodiments allow the publication of the present invention to be complete, and general knowledge in the technical field to which the present invention pertains. It is provided to fully inform the holder of the scope of the invention, and the invention is only defined by the scope of the claims. The same reference numerals refer to the same components throughout the specification.

Elements or layers referred to as "on" or "on" of another device or layer are not only directly above the other device or layer, but also when intervening another layer or other device in the middle. All inclusive. On the other hand, when a device is referred to as “directly on” or “directly above”, it indicates that no other device or layer is interposed therebetween.

The spatially relative terms “below”, “beneath”, “lower”, “above”, “upper”, etc., are as shown in the figure. It can be used to easily describe the correlation of a device or components with other devices or components. The spatially relative terms should be understood as terms including different directions of the device in use or operation in addition to the directions shown in the drawings. For example, if the device shown in the figure is turned over, a device described as "below" or "beneath" the other device may be placed "above" the other device. Accordingly, the exemplary term “below” can include both the directions below and above. The device can also be oriented in other directions, so that spatially relative terms can be interpreted according to the orientation.

Although the first, second, etc. are used to describe various elements, components and / or sections, it goes without saying that these elements, components and / or sections are not limited by these terms. These terms are only used to distinguish one element, component or section from another element, component or section. Therefore, it goes without saying that the first element, first component or first section mentioned below may be a second element, second component or second section within the technical spirit of the present invention.

The terminology used herein is for describing the embodiments and is not intended to limit the present invention. In the present specification, the singular form also includes the plural form unless otherwise specified in the phrase. As used herein, "comprises" and / or "comprising" refers to the components, steps, operations and / or elements mentioned above, the presence of one or more other components, steps, operations and / or elements. Or do not exclude additions.

Unless otherwise defined, all terms (including technical and scientific terms) used in the present specification may be used as meanings commonly understood by those skilled in the art to which the present invention pertains. In addition, terms defined in the commonly used dictionary are not ideally or excessively interpreted unless specifically defined.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings, and in the description with reference to the accompanying drawings, the same or corresponding components are assigned the same reference numbers regardless of reference numerals, and overlapped therewith. The description will be omitted.

The substrate processing apparatus according to some embodiments of the present invention may be an apparatus using a microwave power system.

1 is a block diagram illustrating a substrate processing apparatus according to an embodiment of the present invention. FIG. 2 is a block diagram illustrating a probing unit in the substrate processing apparatus of FIG. 1. 3 is a flowchart illustrating a test operation of a substrate processing apparatus according to an embodiment of the present invention. 4 is a flowchart illustrating another test operation of the substrate processing apparatus according to an embodiment of the present invention.

First, referring to Figure 1, the substrate processing apparatus according to an embodiment of the present invention is a power source 120, an applicator (applicator) 140, a circulator module 170, a probing unit 131, the controller 150 , A memory 150a, a small signal generator 180, and the like.

The power source 120 provides power to the circulator module 170. The power source 120 may be a magnetron, but is not limited thereto. The magnetron has a higher individual output than a solid state driver. In addition, the magnetron can be simultaneously oscillated and amplified.

The applicator 140 uses power provided through the circulator module 170. The applicator 140 means a place where the provided power is used, for example, the provided power can be used to generate plasma. In this case, the applicator 140 may be plasma semiconductor equipment.

The circulator module 170 includes a first circulator 171 and a second circulator 172.

The first circulator 171 includes three nodes (ie, a first node, a second node, and a third node). The first node of the first circulator 171 is connected to the power source 120, the second node is connected to the second circulator 172, and the third node is connected to the small signal generator 180.

The first circulator 171 transfers the signal / power in one direction (see the arrow in 171 of FIG. 1). The signal provided from the first node is provided as the second road, the signal provided from the second node is provided as the third road, and the signal provided from the third node is provided as the first road. Accordingly, power output from the power source 120 is transmitted to the second circulator 172 through the first circulator 171. The small signal provided from the small signal generator 180 is transmitted to the power source 120 through the first circulator 171.

In addition, the second circulator 172 includes three nodes (ie, a fourth node, a fifth node, and a sixth node). The fourth node of the second circulator 172 is connected to the second node of the first circulator 171, the fifth node is connected to the applicator 140, and the sixth node is the probing unit 131 (ie , Probe (131b in FIG. 2).

The second circulator 172 transmits the signal / power in one direction (see the arrow in 172 in FIG. 1). The signal provided from the fourth node is provided as the fifth road, the signal provided from the fifth node is provided as the sixth road, and the signal provided from the sixth node is provided as the fourth road. Accordingly, the power delivered from the first circulator 171 is transmitted to the applicator 140 through the second circulator 172. The reflected wave (ie, reflected power) generated by the applicator 140 is transmitted to the probing unit 131 through the second circulator 172.

The probing unit 131 includes a dummy rod 131a and a probe 131b, as shown in FIG. 2. Here, the probe 131b may be an RF power probe or an electric field probe, but is not limited thereto. The probe 131b senses whether reflected waves are generated.

In the case where matching is well performed in the applicator 140 or in a section in which no mode jump occurs, reflected waves (ie, reflected power) from the applicator 140 are not generated. However, when the matching is not performed well or when a mode jump occurs, reflected waves from the applicator 140 are generated.

Here, the mode jump means that the plasma pattern is broken in the applicator 140 (ie, in the process chamber). During the design and test / process preparation process, a stable substrate processing process is prepared under a specific plasma pattern. Therefore, if the specific plasma pattern is rapidly changed during the process, a stable substrate processing process cannot be performed. The plasma pattern is determined by the electric field shape in the process chamber, and the electric field shape can be changed according to the size and frequency of electric power. For example, although the mode jump does not occur when the power size is between 1 kW and 3 kW, a mode jump may occur when the power size is greater than 3 kW. For another example, the mode jump does not occur when the frequency of the power is 2400 MHz or less, but when the power frequency is greater than 2400 MHz, a mode jump may occur.

In the absence of the circulator module 170 (i.e., the first circulator 171 and / or the second circulator 172), the reflected waves from the applicator 140 are transmitted directly to the power source 120, thereby The power output from the source 120 may be affected.

However, in the substrate processing apparatus according to an embodiment of the present invention, since the circulator module 170 is disposed between the power source 120 and the applicator 140, reflected waves are not transmitted to the power source 120. . The reflected wave from the applicator 140 (ie, reflected power) is provided to the probing unit 131 through the second circulator 172. The probe of the probing unit 131 (131b in FIG. 2) senses the reflected wave from the applicator 140 and outputs a feedback signal FD1.

The controller 150 receives the command signal CMD including the target output value and controls the power source 120. In addition, the controller 150 is provided with a feedback signal FD1. The controller 150 stores the condition (eg, a specific frequency, etc.) of the power in which the mode jump occurs, in the memory 150a, and generates power so that the mode jump does not occur based on the stored condition. The power source 120 is controlled to be provided.

The controller 150 provides the first control signal CS1 to the power source 120. When the power source 120 is a magnetron, the first control signal CS1 may be a signal for adjusting at least one of the filament current and anode voltage of the magnetron.

In addition, the controller 150 provides the second control signal CS2 to the small signal generator 180. The small signal generator 180 receives the second control signal CS2 and generates a small signal. The generated small signal is transmitted to the power source 120 through the waveguide 164, the first circulator 171, and the waveguide 161. The main frequency of the power output from the power source 120 is adjusted / changed by the small signal.

On the other hand, optionally, the controller 150 may not generate the first control signal CS1, but only the second control signal CS2. This is because adjusting the main frequency of the power output to the power source 120 using a small signal is easier than controlling the filament current and / or anode voltage of the magnetron.

Further, in the memory 150a, for example, a safety condition of power in which mode jump does not occur, a mode jump may occur, but a mode jump may be avoided using a small signal and / or a first control signal CS1. There may be an avoidance condition, and a mode jump condition of power at which the mode jump occurs (because it is difficult to avoid). That is, the meaning of avoiding the mode jump means that a mode jump occurs if there is no separate control of the small signal and / or the first control signal CS1, but the mode jump occurs through the control of the small signal and / or the first control signal CS1. This means that no jump occurs. For a simple example, if the power provided from the power source 120 does not cause a mode jump between 1kW and 3kW, the safety condition of the power is 1kW to 3kW, and a mode signal is avoided by using a small signal between 3kW and 4kW. If it can be done, the power avoidance condition is 3 kW to 4 kW, and if it can be avoided above 4 kW, the mode jump condition for power is 4 kW or more.

Specifically, the controller 150 receives a command signal CMD including the target output value, and checks which condition the target output value corresponds to. When the target output value corresponds to the safety condition, the controller 150 prevents the small signal generator from generating the small signal and controls only the power source 120.

When the target output value corresponds to the avoidance condition, the controller 150 controls the small signal generator 164 to transmit the small signal to the power source 120. A small signal can be used to avoid a mode jump.

When the target output value corresponds to the mode jump condition, the controller 150 may alert the user that a mode jump may occur.

In FIG. 1, the memory 150a is exemplarily illustrated as being disposed in the controller 150, but is not limited thereto. If it can be controlled by the controller 150 or if the controller 150 can receive data stored in the memory 150a, the memory 150a may be disposed outside the controller 150.

The power source 120, the first circulator 171, the second circulator 172, the applicator 140, and the small signal generator 180 may be connected to each other through the waveguides 161 to 164. The waveguides 161 to 164 have less loss compared to coaxial cables. The loss when the high frequency signal passes through the waveguides 161 to 164 is considerably smaller than the loss when the high frequency signal passes through the coaxial cable. However, since the loss increases in proportion to the moving distance of the signal, a coaxial cable may be used instead of the waveguides 161 to 164 when moving a short distance of power.

Hereinafter, the operation of the substrate processing apparatus according to an embodiment of the present invention will be described with reference to FIGS. 1 to 4.

First, through the test operation, while changing the power condition (eg, size, frequency, etc.), the power safety condition, avoidance condition, and mode jump condition are searched. After finding the safety condition, the avoidance condition, and the mode jump condition, these are stored in the memory 150a, and are used in the normal operation.

Hereinafter, a test operation for finding an avoidance condition will be described in detail.

For example, if the applicator is a plasma semiconductor equipment, a dummy substrate is placed in the plasma semiconductor equipment and testing is started.

Power is started to be produced from the power source 120. The electric power provided by the electric power source 120 is transmitted to the applicator 140 through the first circulator 171 and the second circulator 172. That is, the power provided from the power source 120 is the first node of the first circulator 171, the second node of the first circulator 171, the fourth node and the second of the second circulator 172. Through the fifth node of the circulator 172, it is delivered to the applicator 140.

While changing the condition (eg, size, frequency, etc.) of the power provided by the power source 120, a condition in which a mode jump is generated is checked.

1 and 3, it is checked whether a mode jump has occurred (see S210). For example, it is possible to check whether a mode jump has occurred by checking a change in a reflection coefficient. When the reflection coefficient is higher than the reference value, it may be determined that a mode jump has occurred.

When the mode jump does not occur, the probe 131b does not generate the feedback signal FD1. Therefore, the controller 150 also does not generate the second control signal CS2. Therefore, the small signal generator 180 does not maintain the small signal or generate a new small signal (S220).

However, when a mode jump occurs, the probe 131b generates a feedback signal FD1. Therefore, the controller 150 also generates the second control signal CS2. Therefore, the small signal generator 180 also generates a new small signal or adjusts the frequency or magnitude of the small signal (S230). The small signal is transmitted to the power source 120 through the first circulator 171 and affects the power output from the power source 120. For example, the main frequency of the power source 120 may be adjusted (or shifted).

If the mode jump no longer occurs due to the small signal, the condition in which the mode jump has occurred (eg, power size, frequency, etc.) and / or the condition of the small signal that controlled the mode jump (eg, the small signal) Size, frequency, etc.). For example, it may be stored in the memory 150a. That is, although a mode jump has occurred, since the mode jump is avoided through the generation of a small signal, conditions stored in the memory 150a may be avoided.

However, if the mode jump is still occurring, the condition (frequency or magnitude) of the small signal is changed. While continuously changing the condition of the small signal, the condition of the small signal that can control the mode jump is found.

Alternatively, referring to FIGS. 1 and 4, it is checked whether a mode jump has occurred (see S210). When the mode jump does not occur, the small signal generator 180 maintains the small signal as it is or does not generate a new small signal (S220).

However, when a mode jump occurs, when a mode jump occurs, the probe 131b generates a feedback signal FD1. The controller 150 receives the feedback signal FD1 and generates the second control signal CS2. Therefore, the small signal generator 180 also generates a new small signal or adjusts the frequency or magnitude of the small signal (S230).

In addition, the controller 150 receives the feedback signal FD1 and provides the first control signal CS1 to the power source 120. At least one of the filament current and the anode voltage of the magnetron is adjusted by the first control signal CS1 (S240).

If the mode jump no longer occurs due to the small signal generation and the magnetron control, the condition in which the mode jump occurred (for example, power size, frequency, etc.), the condition of the small signal for controlling the mode jump (for example, Small signal size, frequency, etc.), conditions of the first control signal CS1, and the like are stored. For example, it may be stored in the memory 150a. That is, although a mode jump has occurred, since the mode jump is avoided through the generation of a separate small signal / first control signal CS1, conditions stored in the memory 150a may be avoided.

However, if the mode jump is continuously occurring, the condition (frequency or magnitude) of the small signal and / or the first control signal CS1 is changed. While continuously changing the conditions of the small signal and / or the first control signal CS1, the conditions of the small signal and / or the first control signal CS1 capable of controlling the mode jump are found.

In summary, the controller 150 may store the conditions in which the mode jump occurred, the conditions of the small signal for controlling the mode jump, and / or the conditions of the first control signal CS1 through the test operation. The stored conditions become avoidance conditions.

The stored conditions are used for normal operation of the substrate processing apparatus. Here, the normal operation means an operation (substrate processing process) of processing a normal substrate, not a dummy substrate.

Through the above-described test, the controller 150 can know the safety condition, the avoidance condition, and the mode jump condition. Therefore, since the controller 150 already knows the condition in which the mode jump occurs (that is, the mode jump condition), the controller 150 controls the output of the power source 120 within the range in which the mode jump does not occur. Can be.

The controller 150 receives a command signal CMD including the target output value, and checks which condition the target output value corresponds to. When the target output value corresponds to the safety condition, the controller 150 prevents the small signal generator from generating the small signal and controls only the power source 120.

When the target output value corresponds to the avoidance condition, the controller 150 controls the small signal generator 164 to transmit the small signal to the power source 120. A small signal can be used to avoid a mode jump. Depending on the conditions of the small signal and / or the first control signal CS1 already stored in the memory 150a, the small signal and / or the first control signal CS1 is generated.

When the target output value corresponds to the mode jump condition, the controller 150 may alert the user that a mode jump may occur.

In summary, the mode jump does not occur when the size of the power is between 1 kW and 3 kW, but the mode jump may occur when the size of the power is greater than 3 kW. However, even if the size of the power is 3 kW or more, the frequency of the power is adjusted using a small signal or the like, so that a mode jump may not occur. For example, it is possible to prevent a mode jump from occurring in the range of 3 kW to 4 kW using a small signal. As a result, the range in which the mode jump does not occur can be widened from 1 kW to 3 kW to 1 kW to 4 kW.

5 is a block diagram illustrating a substrate processing apparatus according to another embodiment of the present invention. For convenience of description, differences from those described with reference to FIGS. 1 to 4 will be mainly described.

Referring to FIG. 5, in the substrate processing apparatus according to another embodiment of the present invention, the circulator module 170 includes a first circulator 171, a second circulator 172, and a third circulator 173. Includes.

The first circulator 171 includes three nodes (ie, a first node, a second node, and a third node). The first node of the first circulator 171 is connected to the power source 120, the second node is connected to the second circulator 172, and the third node is connected to the third circulator 173.

The second circulator 172 includes three nodes (ie, a fourth node, a fifth node, and a sixth node). The fourth node of the second circulator 172 is connected to the second node of the first circulator 171, the fifth node is connected to the applicator 140, and the sixth node is the probing unit 131 (ie , Probe (131b in FIG. 2).

The third circulator 173 includes three nodes (ie, seventh node, eighth node, and ninth node). The seventh node of the third circulator 173 is connected to the small signal generator 180, the eighth node is connected to the third node of the first circulator 171, and the dummy load 133 to the ninth node Is connected.

The third circulator 173 transmits the signal / power in one direction (see the arrow in 173 of FIG. 5). The signal from the seventh node is provided as the eighth road, the signal from the eighth node is provided as the ninth road, and the signal from the ninth node is provided as the seventh road.

Accordingly, the small signal transmitted from the small signal generator 180 is the power source 120 through the waveguide 165, the third circulator 173, the waveguide 164, the first circulator 171, and the waveguide 161. ).

Meanwhile, reflected waves (reflected power) may be generated between the first circulator 171 and the second circulator 172. If there is no third circulator 173, the reflected wave reflected from the second circulator 172 may be directly transmitted to the power source 120. In the substrate processing apparatus according to another embodiment of the present invention, the reflected wave reflected from the second circulator 172 is a waveguide 163, a first circulator 171, a waveguide 164, a third circulator 173 It is transmitted to the dummy rod 133 through. Therefore, due to the third circulator 173 and the dummy rod 133, the reflected wave reflected from the second circulator 172 does not affect the power source 120.

6 is a block diagram illustrating a substrate processing apparatus according to another embodiment of the present invention. For convenience of explanation, differences from those described with reference to FIGS. 1 to 5 will be mainly described.

In the substrate processing apparatus according to an embodiment of the present invention described with reference to FIGS. 1 to 5, the controller 150 receives the feedback signal FD1 from the probe 131 and receives the first control signal CS1 from the power source ( 120), and provides a second control signal CS2 to the small signal generator 180.

On the other hand, referring to FIG. 6, in the substrate processing apparatus according to another embodiment of the present invention, the controller 150 receives the feedback signal FD1 from the probe 131 and does not generate the second control signal CS2. Only one control signal CS1 may be provided to the power source 120. In this case, the circulator module 170 may not include multiple circulators.

Conversely, the controller 150 may receive the feedback signal FD1 from the probe 131 and provide only the second control signal CS2 to the small signal generator 180 without generating the first control signal CS1.

Although the embodiments of the present invention have been described with reference to the above and the accompanying drawings, those of ordinary skill in the art to which the present invention pertains can implement the present invention in other specific forms without changing its technical spirit or essential features. You will understand that there is. Therefore, it should be understood that the embodiments described above are illustrative in all respects and not restrictive.

120: power source 131: probing unit
131a: dummy rod 131b: probe
140: applicator 150: controller
170: circulator module 171: first circulator
172: second circulator 173: third circulator
180: small signal generator

Claims (16)

A power source that provides power;
An applicator using the electric power;
A circulator module connected between the power source and the applicator to transfer the power;
A small signal generator that generates a small signal and transmits it to the power source through the circulator module when a reflected wave is generated from the applicator;
A memory that stores the power avoidance condition that can avoid a mode jump; And
And a controller that receives a command signal including a target output value to control the power source, and controls the small signal generator to transmit the small signal to the power source when the target output value corresponds to the avoidance condition. Substrate processing device. According to claim 1,
The memory further stores the safety condition of the power in which no mode jump occurs,
When the target output value corresponds to the safety condition, the controller prevents the small signal generator from generating the small signal. According to claim 1,
The memory further stores the mode jump condition of the power at which the mode jump occurs, the substrate processing apparatus. According to claim 1,
A substrate processing apparatus in which the main frequency of power output from the power source is changed by the small signal. According to claim 1,
The power source is a magnetron substrate processing apparatus. The method of claim 5,
When the target output value corresponds to the avoidance condition, the controller further adjusts at least one of the filament current and the anode voltage of the magnetron. According to claim 1,
And a probe connected to the circulator module and sensing a mode jump in the applicator generated as the power condition changes to provide a feedback signal to the controller. The method of claim 7,
The probe is an RF power probe or an electric field probe, a substrate processing apparatus. The method of claim 7,
The circulator module includes a first circulator and a second circulator,
The first node of the first circulator is connected to the power source, the second node is connected to the second circulator,
The fourth node of the second circulator is connected to the second node of the first circulator, the fifth node is connected to the applicator, and the sixth node is connected to the probe. The method of claim 9,
The circulator module further includes a third circulator,
The seventh node of the third circulator is connected to the small signal generator, the eighth node is connected to the third node of the first circulator, the substrate processing apparatus. The method of claim 10,
A dummy rod is connected to the ninth node of the third circulator, the substrate processing apparatus. A power source that provides power;
An applicator using the electric power;
A circulator module connected between the power source and the applicator to transfer the power;
A small signal generator connected to the circulator module and generating a small signal when a reflected wave is generated from the applicator;
A probe connected to the circulator module and sensing a mode jump in the applicator generated as the power condition changes, thereby providing a feedback signal; And
A controller that receives the feedback signal and controls the small signal generator to generate the small signal,
The small signal is transmitted to the power source through the circulator module,
And the controller finds the condition of the small signal from which the mode jump is avoided while changing the size or frequency of the small signal. The method of claim 12,
The controller, after finding the condition of the small signal from which the mode jump is avoided, stores the found condition of the small signal in memory. The method of claim 12,
The circulator module includes a first circulator and a second circulator,
The first node of the first circulator is connected to the power source, the second node is connected to the second circulator,
The fourth node of the second circulator is connected to the second node of the first circulator, the fifth node is connected to the applicator, and the sixth node is connected to the probe,
The small signal is transmitted to the power source through the first circulator, the substrate processing apparatus of the main frequency of the power output from the power source is changed by the small signal. The method of claim 14,
The circulator module further includes a third circulator,
The seventh node of the third circulator is connected to the small signal generator, the eighth node is connected to the third node of the first circulator, and a dummy load is connected to the ninth node,
The small signal is a substrate processing apparatus that is transmitted to the power source through the third circulator and the first circulator. The method of claim 12,
The power source is a magnetron, substrate processing apparatus.

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