KR102110416B1 - Flexible glass vibration acoustic speaker and its manufacturing method - Google Patents

Abstract

Disclosed are a flexible glass vibrating acoustic speaker and a manufacturing method thereof, which have an integrated structure between an ultra-thin plate glass and a piezoelectric element by directly depositing the piezoelectric element composed of a first electrode, a piezoelectric layer, and a second electrode on the ultra-thin plate glass, thereby maximizing piezoelectric efficiency as well as exhibiting excellent durability and flexible properties. The flexible glass vibrating acoustic speaker according to the present invention includes: the ultra-thin glass having a thickness of 100 um or less; the first electrode formed on the ultra-thin glass; the piezoelectric layer formed on the first electrode; and the second electrode formed on the piezoelectric layer.

Description

Flexible glass vibration acoustic speaker and its manufacturing method {FLEXIBLE GLASS VIBRATION ACOUSTIC SPEAKER AND ITS MANUFACTURING METHOD}

The present invention relates to a flexible glass vibrating acoustic speaker and a method for manufacturing the same, and more specifically, by forming a piezoelectric element composed of a first electrode, a piezoelectric layer, and a second electrode directly on ultrathin glass, to form an ultrathin plate. The present invention relates to a flexible glass vibrating acoustic speaker and a method of manufacturing the same, which not only can maximize the piezoelectric efficiency as it has an integrated structure between the glass and the piezoelectric element, but also can exhibit excellent durability and flexible characteristics.

A speaker is a device that receives electrical signals and converts them into sound waves for output.

There are various types of speakers, such as a dynamic speaker, an electrostatic speaker, and a crystal speaker, depending on the operation principle. All of these speakers have a characteristic of outputting sound by vibrating the surrounding air while the diaphragm mechanically vibrates according to an electrical signal.

Meanwhile, in recent years, research into manufacturing transparent acoustic speakers capable of directly generating sounds using transparent glass has been actively conducted.

As a related prior document, Korean Patent Publication No. 10-2011-0128968 (published on December 1, 2011) discloses a transparent and directional cellulose piezoelectric paper speaker.

The object of the present invention is to directly form a piezoelectric element composed of a first electrode, a piezoelectric layer, and a second electrode on an ultra-thin plate glass to form a piezoelectric efficiency by having an integrated structure between the ultra-thin plate glass and the piezoelectric element. It is to provide a flexible glass vibrating acoustic speaker that can not only maximize, but also exhibit excellent durability and flexible characteristics, and a method of manufacturing the same.

Flexible glass vibration acoustic speaker according to an embodiment of the present invention for achieving the above object is an ultra-thin glass having a thickness of 100㎛ or less; A first electrode formed on the ultrathin glass; A piezoelectric layer formed on the first electrode; And a second electrode formed on the piezoelectric layer.

The ultra-thin glass is preferably having a thickness of 5㎛ ~ 100㎛.

In addition, each of the first and second electrodes is Ag Nanowire, Ag paste, Indium Tin Oxide (ITO), Indium Zinc Oxide (IZO), Gallium Indium Oxide (GIO), Gallium (GZO) Zinc Oxide) and FTO (Fluorine Tin Oxide).

It is preferable that each of the first and second electrodes has a thickness of 50 nm to 50 μm.

In addition, the piezoelectric layer includes lead zirconate titanate (PZT), AlN, (Pb, Sm) TiO ₃ , quartz, PMN (Pb (MgNb) O ₃ ) -PT (PbTiO ₃ ), PVDF (Polyvinylidene fluoride) and It is formed of one or more piezoelectric materials selected from PVDF-TrFe.

It is preferable that the piezoelectric layer has a thickness of 500 nm to 1 mm.

Here, the first electrode, the piezoelectric layer, and the second electrode are formed by vapor deposition directly on the ultra-thin plate glass, and have an integral structure.

In addition, a first electrode terminal formed on one edge of the first electrode and connected to the first electrode; A second electrode terminal formed on the other edge of the second electrode and connected to the second electrode; And an insulating layer formed between the first electrode, the piezoelectric layer, and the second electrode.

At this time, the first electrode and the second electrode are formed in a zigzag form with a piezoelectric layer interposed therebetween, and the insulating layer may be formed to contact the side surfaces of the first electrode and the piezoelectric layer and the lower surface of the second electrode. .

Here, the insulating layer may have the same thickness as the total thickness of the first electrode and the piezoelectric layer.

A piezoelectric element is configured by including the first electrode, the piezoelectric layer, and the second electrode. Here, the piezoelectric element may have any one of a plate pattern, a stripe pattern, and a cross lattice pattern when viewed in a plan view.

A method of manufacturing a flexible glass vibrating acoustic speaker according to an embodiment of the present invention for achieving the above object comprises the steps of forming a first electrode by depositing a first transparent conductive material on ultra-thin glass having a thickness of 100 μm or less; Forming a piezoelectric layer by depositing a piezoelectric material on the ultra-thin plate glass on which the first electrode is formed; And forming a second electrode by depositing a second transparent conductive material on the ultra-thin plate glass on which the piezoelectric layer is formed.

Each of the first and second transparent conductive materials is silver nanowire, silver paste, indium tin oxide (ITO), indium zinc oxide (IZO), gallium indium oxide (GIO), gallium in zinc (GZO) Zinc Oxide) and FTO (Fluorine Tin Oxide).

In this case, the piezoelectric layer includes lead zirconate titanate (PZT), AlN, (Pb, Sm) TiO ₃ , quartz, PMN (Pb (MgNb) O ₃ ) -PT (PbTiO ₃ ), PVDF (Polyvinylidene fluoride) and One or more piezoelectric materials selected from PVDF-TrFe may be deposited by sputtering deposition.

In addition, after the step of forming the second electrode, forming an insulating layer in contact with a side surface of the first electrode and the piezoelectric layer and a lower surface of the second electrode; And forming a first electrode terminal and a second electrode terminal respectively connected to the first electrode and the second electrode by depositing a metal material on the first electrode and the second electrode.

In the flexible glass vibrating acoustic speaker and its manufacturing method according to the present invention, the first electrode, the piezoelectric layer and the second electrode are all formed by vapor deposition directly on ultra-thin glass, and thus have an integral structure.

As a result, the flexible glass vibrating acoustic speaker according to the present invention and its manufacturing method operate on the principle that the ultra-thin glass vibrates and generates sound by generating displacement using a piezoelectric element deposited directly on the ultra-thin glass. do.

In addition, the flexible glass vibrating acoustic speaker according to the present invention and its manufacturing method are not a method of bonding a piezoelectric element using an adhesive, but a piezoelectric element composed of a first electrode, a piezoelectric layer, and a second electrode on ultra-thin glass. By directly depositing to form an integral structure, it can be stably bonded to ultra-thin glass, thereby ensuring excellent durability.

In addition, the flexible glass vibrating acoustic speaker according to the present invention and its manufacturing method are not only capable of securing high transmittance and excellent flexible characteristics through the application of ultra-thin glass, but also have excellent vibration efficiency to maximize the piezoelectric effect. Has an advantage.

1 is a cross-sectional view showing a flexible glass vibration acoustic speaker according to an embodiment of the present invention.
Figure 2 is a schematic diagram for explaining the operating principle of the flexible glass vibration acoustic speaker according to an embodiment of the present invention.
3 is a plan view showing a flexible glass vibration acoustic speaker according to an embodiment of the present invention.
4 is a plan view showing a flexible glass vibration acoustic speaker according to a modification of the present invention.
5 is a plan view showing a flexible glass vibration acoustic speaker according to another modification of the present invention.
6 to 10 are process cross-sectional views showing a method for manufacturing a flexible glass vibration acoustic speaker according to an embodiment of the present invention.

Advantages and features of the present invention, and methods for achieving them will be clarified with reference to embodiments described below in detail together with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but will be implemented in various different forms, and only the present embodiments allow the disclosure of the present invention to be complete, and the ordinary knowledge in the technical field to which the present invention pertains. It is provided to fully inform the holder of the scope of the invention, and the invention is only defined by the scope of the claims. The same reference numerals refer to the same components throughout the specification.

Hereinafter, a flexible glass vibrating acoustic speaker and a manufacturing method thereof according to a preferred embodiment of the present invention will be described in detail with reference to the accompanying drawings.

1 is a cross-sectional view showing a flexible glass vibration acoustic speaker according to an embodiment of the present invention, Figure 2 is a schematic diagram for explaining the operating principle of the flexible glass vibration acoustic speaker according to an embodiment of the present invention, Figure 3 is the present invention It is a plan view showing a flexible glass vibration acoustic speaker according to an embodiment of the.

1 to 3, the flexible glass vibrating acoustic speaker 100 according to an embodiment of the present invention includes ultra-thin glass 110, a first electrode 120, a piezoelectric layer 130, and a second electrode 140 ). In addition, the flexible glass vibration acoustic speaker 100 according to an embodiment of the present invention may further include a first electrode terminal 150, a second electrode terminal 160, and an insulating layer 170.

The ultra-thin glass 110 may have a plate shape having one surface and the other surface opposite to one surface. At this time, in the present invention, it is possible to not only secure a high transmittance by using the ultra-thin glass 110, but also to exhibit flexible characteristics. Gorilla glass may be used as the ultra-thin glass 110, but this is exemplary and is not particularly limited as long as it is a transparent glass material.

To this end, the ultra-thin glass 110 preferably has a thickness of 100 µm or less, more specifically 5 µm to 100 µm, and the most preferable range may be 20 to 40 µm.

When the thickness of the ultra-thin glass 110 is less than 5 μm, the thickness is too thin, so it is difficult to secure strength and rigidity and thus it is difficult to secure durability, and handling may be difficult during the deposition process performed on the ultra-thin glass 110. Conversely, when the thickness of the ultra-thin glass 110 exceeds 100 μm, vibration efficiency is reduced due to an excessive thickness design, and difficulty in implementing flexible characteristics may follow.

The first electrode 120 is formed on the ultra-thin glass 110. The first electrode 120 is formed by directly depositing a transparent conductive material on ultra-thin glass by sputtering using a deposition mask. In this way, the first electrode 120 is formed on the ultra-thin glass 110 by a direct deposition method, and thus may have an integrated structure with the ultra-thin glass 110.

The first electrode 120 is formed of a transparent conductive material having excellent transmittance. Specifically, the first electrode 120 is silver nanowire (Ag Nanowire), silver paste (Ag paste), ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), GIO (Gallium Indium Oxide), GZO (Gallium Zinc) Oxide) and FTO (Fluorine Tin Oxide).

It is preferable that the first electrode 120 has a thickness of 50 nm to 50 μm, and a thickness of 500 nm to 10 μm may be suggested as a more preferable range. When the thickness of the first electrode 120 is less than 50 nm, the thickness of the first electrode 120 is too thin, which may cause defects such as short circuit of the electrode. Conversely, when the thickness of the first electrode 120 exceeds 50 μm, it is not economical because it may act as a factor that increases only the manufacturing cost without further effect increase.

The piezoelectric layer 130 is formed on the first electrode 120. The piezoelectric layer 130, like the first electrode 120, is formed by directly depositing a piezoelectric material on the ultra-thin glass 110 on which the first electrode 120 is formed by sputtering using a deposition mask. . As such, the piezoelectric layer 130 is formed on the ultra-thin glass 110 on which the first electrode 120 is formed by a direct deposition method, and thus may have an integrated structure with the ultra-thin glass 110.

The piezoelectric layer 130 is formed of a piezoelectric material, more preferably a single crystal piezoelectric material. Specifically, the piezoelectric layer 130 includes lead zirconate titanate (PZT), AlN, (Pb, Sm) TiO ₃ , quartz, PMN (Pb (MgNb) O ₃ ) -PT (PbTiO ₃ ), PVDF (Polyvinylidene) fluoride) and PVDF-TrFe.

It is preferable that the piezoelectric layer 130 has a thickness of 500 nm to 1 mm, and a more preferable range may present a thickness of 50 μm to 500 μm. When the thickness of the piezoelectric layer 130 is less than 500 nm, it may be difficult to properly exhibit piezoelectric performance because the thickness is too thin. Conversely, when the thickness of the piezoelectric layer 130 exceeds 1 mm, it is not preferable because it can act as a factor that inhibits the flexible characteristics by increasing only the thickness without further effect.

The second electrode 140 is formed on the piezoelectric layer 130. The second electrode 140 is formed by directly depositing a transparent conductive material on the ultra-thin glass 110 on which the first electrode 120 and the piezoelectric layer 130 are formed by sputtering using a deposition mask. In this way, the second electrode 140 is formed on the ultra-thin glass 110 by a direct deposition method, and thus may have an integrated structure with the ultra-thin glass 110.

Here, the piezoelectric element P is configured to include the first electrode 120, the piezoelectric layer 130, and the second electrode 140. As illustrated in FIG. 3, the piezoelectric element P may be directly deposited on all regions except the edge of the ultra-thin glass 110 to be formed. Accordingly, the piezoelectric element P may have a plate shape when viewed in a plan view.

The second electrode 140 is formed of a transparent conductive material having excellent transmittance. Specifically, the second electrode 140 is silver nanowire (Ag Nanowire), silver paste (Ag paste), ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), GIO (Gallium Indium Oxide), GZO (Gallium Zinc) Oxide) and FTO (Fluorine Tin Oxide).

It is preferable that the second electrode 140 has a thickness of 50 nm to 50 μm, and a thickness of 500 nm to 10 μm may be suggested as a more preferable range. When the thickness of the second electrode 140 is less than 50 nm, the thickness of the second electrode 140 is too thin, which may cause defects such as short circuit of the electrode. On the contrary, when the thickness of the second electrode 140 exceeds 50 μm, it is not economical because it may act as a factor that increases only the manufacturing cost without further effect increase.

The first electrode terminal 150 is formed on one edge of the first electrode 120 and is electrically connected to the first electrode 120. In addition, the second electrode terminal 160 is formed on the other edge of the second electrode 140 and is electrically connected to the second electrode 140.

At this time, each of the first and second electrode terminals 150 and 160 may be formed by directly depositing a metal material on the first electrode 120 and the second electrode 140 by sputtering using a deposition mask. . Each of the first and second electrode terminals 150 and 160 may be formed in a stacked structure in which the first layer and the second layer are sequentially stacked. In this case, nickel (Ni) may be used for each of the first layers of the first and second electrode terminals 150 and 160, and gold (Au) or palladium (Pd) may be used for each of the second layers, It is not limited thereto. Here, each of the first layers of the first and second electrode terminals 150 and 160 may have a thickness of 10 to 100 nm, and each of the second layers may have a thickness of 50 to 500 nm.

The insulating layer 170 is formed between the first electrode 120, the piezoelectric layer 130, and the second electrode 140. More specifically, the insulating layer 170 is preferably disposed below the second electrode terminal 160, which protrudes to the outside of the piezoelectric layer 130 when forming the second electrode terminal 160. This is to stably support the other edge of the second electrode 140. The insulating layer 170 is preferably formed to have the same or similar width to that of the second electrode terminal 150. Here, the insulating layer 170 may be formed by performing side deposition using a PECVD (Plasma Enhanced Chemical Vapor Deposition) deposition method.

The insulating layer 170 is preferably made of an insulating material having high transmittance, but can be used without limitation as long as it has insulating properties. For example, the insulating layer 170 may be any one selected from SiOx, SiNx, and the like.

At this time, the first electrode 120, the piezoelectric layer 130, and the second electrode 140 may be formed with the same area.

Alternatively, the first electrode 120, the piezoelectric layer 130, and the second electrode 140 may be formed with different areas. When the first electrode 120, the piezoelectric layer 130, and the second electrode 140 have different areas, the first electrode 120 and the second electrode 140 sandwich the piezoelectric layer 130 therebetween. It is preferably formed in a zigzag form. Here, the insulating layer 170 is formed to contact the lower surface of the second electrode 140 together with the side surfaces of the first electrode 120 and the piezoelectric layer 130. It is preferable that the insulating layer 170 has the same thickness as the total thickness of the first electrode 120 and the piezoelectric layer 130.

Meanwhile, FIG. 4 is a plan view showing a flexible glass vibrating acoustic speaker according to a modification of the present invention, and FIG. 5 is a plan view showing a flexible glass vibrating acoustic speaker according to another modification of the present invention.

4, the piezoelectric element P is formed by depositing directly on the ultra-thin glass 110. When viewed in a plan view, the piezoelectric element P may be formed in a stripe pattern shape. Here, although the piezoelectric element P is shown to have a stripe pattern shape designed in the vertical direction, this is exemplary and may have a stripe pattern designed in the horizontal direction or the diagonal direction.

Alternatively, as shown in FIG. 5, the piezoelectric element P may be formed in a cross lattice pattern when viewed in a plan view. In addition, the piezoelectric element P may be designed in various forms such as a circular shape and an oval shape.

In the flexible glass vibrating acoustic speaker according to the above-described embodiment of the present invention, the first electrode, the piezoelectric layer, and the second electrode are all formed by evaporation directly on ultra-thin glass, and thus have an integral structure.

As a result, the flexible glass vibrating acoustic speaker according to an embodiment of the present invention operates on the principle that the ultra-thin glass vibrates and generates sound by generating displacement using a piezoelectric element deposited directly on the ultra-thin glass. .

In addition, the flexible glass vibration acoustic speaker according to an embodiment of the present invention is not a method of bonding a piezoelectric element using an adhesive, but a piezoelectric element composed of a first electrode, a piezoelectric layer, and a second electrode on ultra-thin glass. By directly depositing and forming to have an integrated structure, it can be stably bonded to ultra-thin glass to ensure excellent durability.

In addition, the flexible glass vibrating acoustic speaker according to an embodiment of the present invention is not only capable of securing high transmittance and excellent flexible characteristics through the application of ultra-thin glass, but also has excellent vibration efficiency to maximize the piezoelectric effect. It has an advantage.

Hereinafter, a method of manufacturing a flexible glass vibrating acoustic speaker according to an embodiment of the present invention will be described with reference to the accompanying drawings.

6 to 10 are process cross-sectional views showing a method for manufacturing a flexible glass vibration acoustic speaker according to an embodiment of the present invention.

As shown in FIG. 6, the first electrode 120 is formed by directly depositing the first transparent conductive material on the ultra-thin glass 110 by sputtering using a deposition mask.

At this time, the first transparent conductive material is silver nanowire (Ag Nanowire), silver paste (Ag paste), ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), GIO (Gallium Indium Oxide), GZO (Gallium Zinc Oxide) And FTO (Fluorine Tin Oxide).

Here, the ultra-thin glass 110 may have a plate shape having one surface and the other surface opposite to one surface. At this time, in the present invention, it is possible to not only secure a high transmittance by using the ultra-thin glass 110, but also to exhibit flexible characteristics. Gorilla glass may be used as the ultra-thin glass 110, but this is exemplary and is not particularly limited as long as it is a transparent glass material.

To this end, the ultra-thin glass 110 preferably has a thickness of 100 µm or less, more specifically 5 µm to 100 µm, and the most preferable range may be 20 to 40 µm.

When the thickness of the ultra-thin glass 110 is less than 5 μm, the thickness is too thin, so it is difficult to secure strength and rigidity and thus it is difficult to secure durability, and handling may be difficult during the deposition process performed on the ultra-thin glass 110. Conversely, when the thickness of the ultra-thin glass 110 exceeds 100 μm, vibration efficiency is reduced due to an excessive thickness design, and difficulty in implementing flexible characteristics may follow.

In this step, the first electrode 120 is formed by directly depositing a transparent conductive material on the ultra-thin glass 110 by sputtering using a deposition mask. In this way, the first electrode 120 is formed on the ultra-thin glass 110 by a direct deposition method, and thus may have an integrated structure with the ultra-thin glass 110.

The first electrode 120 is preferably formed to a thickness of 50 nm to 50 μm, and a thickness of 500 nm to 10 μm may be suggested as a more preferable range. When the thickness of the first electrode 120 is less than 50 nm, the thickness of the first electrode 120 is too thin, which may cause defects such as short circuit of the electrode. Conversely, when the thickness of the first electrode 120 exceeds 50 μm, it is not economical because it may act as a factor that increases only the manufacturing cost without further effect increase.

Next, as shown in FIG. 7, the piezoelectric material 130 is formed by depositing a piezoelectric material on the ultra-thin glass 110 on which the first electrode 120 is formed by a sputtering method using a deposition mask.

In this case, the piezoelectric materials include lead zirconate titanate (PZT), AlN, (Pb, Sm) TiO ₃ , quartz, PMN (Pb (MgNb) O ₃ ) -PT (PbTiO ₃ ), PVDF (Polyvinylidene fluoride) and It may include one or more selected from PVDF-TrFe.

In this step, the piezoelectric layer 130, like the first electrode 120, directly deposits the piezoelectric material on the ultrathin glass 110 on which the first electrode 120 is formed by sputtering using a deposition mask. Is formed by. In this way, the piezoelectric layer 130 is formed on the ultra-thin glass 110 on which the first electrode 120 is formed by a direct deposition method, and thus may have an integrated structure with the ultra-thin glass 110.

The piezoelectric layer 130 is preferably formed to a thickness of 500 nm to 1 mm, and a more preferable range may be 50 µm to 500 µm. When the thickness of the piezoelectric layer 130 is less than 500 nm, it may be difficult to properly exhibit piezoelectric performance because the thickness is too thin. Conversely, when the thickness of the piezoelectric layer 130 exceeds 1 mm, it is not preferable because it can act as a factor that inhibits the flexible characteristics by increasing only the thickness without further effect.

As shown in FIG. 8, a second electrode 140 is formed by depositing a second transparent conductive material on a super-thin plate glass 110 on which the piezoelectric layer 130 is formed by sputtering using a deposition mask.

At this time, the second transparent conductive material is silver nanowire (Ag Nanowire), silver paste (Ag paste), ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), GIO (Gallium Indium Oxide), GZO (Gallium Zinc Oxide) And FTO (Fluorine Tin Oxide).

In this step, the second electrode 140 is directly deposited on the second transparent conductive material on the ultrathin glass 110 on which the first electrode 120 and the piezoelectric layer 130 are formed by sputtering using a deposition mask. Is formed by. As such, the second electrode 140 is formed on the ultra-thin glass 110 by a direct deposition method, and thus may have an integrated structure with the ultra-thin glass 110.

Here, the piezoelectric element P is configured to include the first electrode 120, the piezoelectric layer 130, and the second electrode 140. When viewed in plan view, the piezoelectric element P may have any one of a plate pattern shape, a stripe pattern, and a cross grid shape pattern.

The second electrode 140 is preferably formed to a thickness of 50 nm to 50 μm, and a more preferred range may present a thickness of 500 nm to 10 μm. When the thickness of the second electrode 140 is less than 50 nm, the thickness of the second electrode 140 is too thin, which may cause defects such as short circuit of the electrode. On the contrary, when the thickness of the second electrode 140 exceeds 50 μm, it is not economical because it can act as a factor that increases only the manufacturing cost without further effect increase.

Next, an insulating layer 170 in contact with a lower surface of the second electrode 140 is formed along with side surfaces of the first electrode 120 and the piezoelectric layer 130.

In this step, the insulating layer 170 may be formed by performing side deposition using a PECVD (Plasma Enhanced Chemical Vapor Deposition) deposition method.

The insulating layer 170 is preferably made of an insulating material having high transmittance, but can be used without limitation as long as it has insulating properties. For example, the insulating layer 170 may be any one selected from SiOx, SiNx, and the like.

As illustrated in FIG. 10, a first electrode terminal (respectively) connected to the first electrode 120 and the second electrode 140 by depositing a metal material on the first electrode 120 and the second electrode 140 ( 150) and the second electrode terminal 160 are formed.

In this step, each of the first and second electrode terminals 150 and 160 is formed by directly depositing a metal material on the first electrode 120 and the second electrode 140 by sputtering using a deposition mask. Can be.

Accordingly, the first electrode terminal 150 is formed on one edge of the first electrode 120 and is electrically connected to the first electrode 120. In addition, the second electrode terminal 160 is formed on the other edge of the second electrode 140 and is electrically connected to the second electrode 140.

Each of the first and second electrode terminals 150 and 160 may be formed in a stacked structure in which the first layer and the second layer are sequentially stacked. In this case, nickel (Ni) may be used for each of the first layers of the first and second electrode terminals 150 and 160, and gold (Au) or palladium (Pd) may be used for each of the second layers, It is not limited thereto. Here, each of the first layers of the first and second electrode terminals 150 and 160 may have a thickness of 10 to 100 nm, and each of the second layers may have a thickness of 50 to 500 nm.

As described above, the method for manufacturing a flexible glass vibration acoustic speaker according to an embodiment of the present invention may be finished.

In the method of manufacturing the flexible glass vibrating acoustic speaker according to the above-described embodiment of the present invention, all of the first electrode, the piezoelectric layer, and the second electrode are formed by direct deposition on ultra-thin glass, and thus have an integral structure.

As a result, the method for manufacturing a flexible glass vibrating acoustic speaker according to an embodiment of the present invention operates on the principle that the ultrathin glass vibrates and generates sound by generating displacement by using a piezoelectric element deposited directly on the ultrathin glass Is done.

In addition, the flexible glass vibration acoustic speaker manufactured by the method according to an embodiment of the present invention is not a method of bonding a piezoelectric element using an adhesive, but is composed of a first electrode, a piezoelectric layer, and a second electrode on ultra-thin glass. By directly depositing the piezoelectric element to be formed so as to have an integrated structure, it can be stably bonded to ultra-thin glass to ensure excellent durability.

In addition, the flexible glass vibrating acoustic speaker manufactured by the method according to the embodiment of the present invention can not only secure high transmittance and excellent flexible characteristics by applying ultra-thin glass, but also have excellent vibration efficiency to maximize the piezoelectric effect. Has the structural advantage to be able.

In the above, the embodiments of the present invention have been mainly described, but various changes or modifications can be made at the level of a person skilled in the art to which the present invention pertains. Such changes and modifications can be said to belong to the present invention without departing from the scope of the technical idea provided by the present invention. Therefore, the scope of the present invention should be judged by the claims set forth below.

100: flexible glass vibration acoustic speaker 110: ultra-thin glass
120: first electrode 130: piezoelectric layer
140: second electrode 150: first electrode terminal
160: second electrode terminal 170: insulating layer
P: Piezoelectric element

Claims (16)

Ultra thin glass having a thickness of 100 µm or less;
A first electrode formed on the ultrathin glass;
A piezoelectric layer formed on the first electrode; And
It includes; a second electrode formed on the piezoelectric layer,
A piezoelectric element including the first electrode, the piezoelectric layer, and the second electrode is configured,
The piezoelectric element including the first electrode, the piezoelectric layer, and the second electrode is formed by vapor deposition directly on the ultra-thin glass, thereby improving durability by having an integral structure that is directly contacted and bonded to the ultra-thin glass. Flexible glass vibrating acoustic speaker, characterized in that.
According to claim 1,
The ultra-thin glass
Flexible glass vibration acoustic speaker, characterized in that it has a thickness of 5㎛ ~ 100㎛.
According to claim 1,
Each of the first and second electrodes
Among Ag Nanowire, Ag paste, Indium Tin Oxide (ITO), Indium Zinc Oxide (IZO), Gallium Indium Oxide (GIO), Gallium Zinc Oxide (GZO) and Fluorine Tin Oxide (FTO) Flexible glass vibration acoustic speaker, characterized in that it comprises at least one selected.
According to claim 1,
Each of the first and second electrodes
Flexible glass vibration acoustic speaker, characterized in that it has a thickness of 50nm ~ 50㎛.
According to claim 1,
The piezoelectric layer
1 selected from lead zirconate titanate (PZT), AlN, (Pb, Sm) TiO ₃ , quartz, PMN (Pb (MgNb) O ₃ ) -PT (PbTiO ₃ ), PVDF (Polyvinylidene fluoride) and PVDF-TrFe Flexible glass vibration acoustic speaker, characterized in that it is formed of more than one kind of piezoelectric material.
According to claim 1,
The piezoelectric layer
Flexible glass vibration acoustic speaker, characterized in that it has a thickness of 500nm ~ 1mm.
delete According to claim 1,
A first electrode terminal formed on one edge of the first electrode and connected to the first electrode;
A second electrode terminal formed on the other edge of the second electrode and connected to the second electrode; And
An insulating layer formed between the first electrode, the piezoelectric layer, and the second electrode;
Flexible glass vibration acoustic speaker further comprising a.
The method of claim 8,
The first electrode and the second electrode are formed in a zigzag form with a piezoelectric layer therebetween,
The insulating layer is a flexible glass vibration acoustic speaker, characterized in that formed so as to contact the side surfaces of the first electrode and the piezoelectric layer, and the second electrode.
The method of claim 9,
The insulating layer
Flexible glass vibration acoustic speaker, characterized in that it has the same thickness as the combined thickness of the first electrode and the piezoelectric layer.
delete According to claim 1,
The piezoelectric element
A flexible glass vibrating acoustic speaker having a shape of any one of a plate pattern, a stripe pattern, and a cross lattice pattern when viewed in a plan view.
Forming a first electrode by depositing a first transparent conductive material on ultrathin glass having a thickness of 100 μm or less;
Forming a piezoelectric layer by depositing a piezoelectric material on the ultra-thin plate glass on which the first electrode is formed; And
Including the step of forming a second electrode by depositing a second transparent conductive material on the ultra-thin plate glass on which the piezoelectric layer is formed;
A piezoelectric element including the first electrode, the piezoelectric layer, and the second electrode is configured,
The piezoelectric element including the first electrode, the piezoelectric layer, and the second electrode is formed by vapor deposition directly on the ultra-thin glass, thereby improving durability by having an integral structure that is directly contacted and bonded to the ultra-thin glass. A method of manufacturing a flexible glass vibrating acoustic speaker, characterized in that it is made.
The method of claim 13,
Each of the first and second transparent conductive materials
Among Ag Nanowire, Ag paste, Indium Tin Oxide (ITO), Indium Zinc Oxide (IZO), Gallium Indium Oxide (GIO), Gallium Zinc Oxide (GZO) and Fluorine Tin Oxide (FTO) Method of manufacturing a flexible glass vibration acoustic speaker, characterized in that it comprises at least one selected.
The method of claim 13,
The piezoelectric layer
1 selected from lead zirconate titanate (PZT), AlN, (Pb, Sm) TiO ₃ , quartz, PMN (Pb (MgNb) O ₃ ) -PT (PbTiO ₃ ), PVDF (Polyvinylidene fluoride) and PVDF-TrFe A method of manufacturing a flexible glass vibrating acoustic speaker, comprising depositing at least one piezoelectric material by sputtering.
The method of claim 13,
After the second electrode forming step,
Forming an insulating layer in contact with a side surface of the first electrode and the piezoelectric layer and a bottom surface of the second electrode; And
Depositing a metal material on the first electrode and the second electrode to form a first electrode terminal and a second electrode terminal respectively connected to the first electrode and the second electrode;
Flexible glass vibration acoustic speaker manufacturing method further comprising a.

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