KR102103805B1 - Composition for forming silica layer, method for manufacturing silica layer, and silica layer - Google Patents

Abstract

A composition for forming a silica film, comprising a silicon-containing polymer, a radical inhibitor, and a solvent, and a total content of a radical inhibitor component present in the composition for forming a silica film is 10 ppm to 1,000 ppm. .

Description

Composition for forming a silica film, a method for producing a silica film, and a silica film {COMPOSITION FOR FORMING SILICA LAYER, METHOD FOR MANUFACTURING SILICA LAYER, AND SILICA LAYER}

The present disclosure relates to a composition for forming a silica film, a method for manufacturing a silica film, and a silica film prepared accordingly.

In a flat panel display device, a thin film transistor (TFT) including a gate electrode, a source electrode, a drain electrode, and a semiconductor is used as a switching element, and a gate line that transmits a scan signal for controlling the thin film transistor (gate line) ) And a data line transmitting a signal to be applied to the pixel electrode are provided in the flat panel display. In addition, an insulating film is formed between the semiconductor and various electrodes to distinguish them. The insulating film may be a silica film containing a silicon component.

In general, a silica film is produced by forming a coating film using polysilazane, polysiloxazan, or a mixture thereof and converting it to an oxide film quality, to reduce defects occurring in the film quality in order to obtain a uniform oxide film quality. Should do.

It is important to control the carbon impurity content in the composition because such defects may be caused by carbon impurities present in the composition for forming a silica film.

One embodiment provides a composition for forming a silica film having a low carbon impurity content to form a uniform film quality.

Another embodiment provides a silica film comprising a silica component formed by curing the composition for forming a silica film.

Another embodiment provides an electronic device including the silica film.

According to one embodiment, as a composition for forming a silica film, comprising a silicon-containing polymer, a radical inhibitor, and a solvent, the total content of the radical inhibitor component present in the composition for forming a silica film is 10 ppm to 1,000 ppm silica film Provided is a composition for formation.

The radical inhibitor may be a phenolic radical inhibitor.

The phenol-based radical inhibitor is 2-6-di-t-butyl-4-methylphenol (2-6-Di-t-butyl-4-methylphenol), 2-t-butyl-4-hydroxyanisole (2 -tert-butyl-4-hydroxyanisole), 4-methoxyphenol, or combinations thereof.

The total content of the radical inhibitor component present in the composition for forming a silica film may be 10 ppm to 500 ppm.

The silicon-containing polymer may include polysilazane, polysiloxazan, or a combination thereof.

The weight average molecular weight of the silicon-containing polymer may be 1,000 to 100,000.

The solvent is benzene, toluene, xylene, ethylbenzene, diethylbenzene, trimethylbenzene, triethylbenzene, cyclohexane, cyclohexene, decahydronaphthalene, dipentene, pentane, hexane, heptane, octane, nonane, decane, At least one selected from the group consisting of ethylcyclohexane, methylcyclohexane, cyclohexane, cyclohexene, p-mentan, dipropyl ether, dibutyl ether, anisole, butyl acetate, amyl acetate, methyl isobutyl ketone, and combinations thereof. It may include.

The silicon-containing polymer may be included in an amount of 0.1 to 30% by weight based on the total amount of the composition for forming a silica film.

According to another embodiment, a silica film including a silica component obtained by curing the above-described composition for forming a silica film is provided.

According to another embodiment, an electronic device including the above-described silica film is provided.

The composition for forming a silica film according to an embodiment includes a radical inhibitor, and the radical inhibitor in the composition for forming a total silica film is included in an amount of 10 ppm to 1,000 ppm. The silica film prepared using the composition for forming a silica film may have a uniform film quality by reducing the occurrence of defects.

Embodiments of the present invention will be described in detail so that those skilled in the art to which the present invention pertains can easily practice. However, the present invention can be implemented in many different forms and is not limited to the embodiments described herein.

Unless otherwise specified in this specification, 'substituted' means a hydrogen atom in a compound is a halogen atom (F, Br, Cl, or I), a hydroxy group, an alkoxy group, a nitro group, a cyano group, an amino group, an azido group, Amidino group, hydrazino group, hydrazono group, carbonyl group, carbamyl group, thiol group, ester group, carboxyl group or its salt, sulfonic acid group or its salt, phosphoric acid or its salt, C1 to C20 alkyl group, C2 to C20 alkenyl group, C2 to C20 alkynyl group, C6 to C30 aryl group, C7 to C30 arylalkyl group, C1 to C30 alkoxy group, C1 to C20 heteroalkyl group, C2 to C20 heteroaryl group, C3 to C20 heteroarylalkyl group, C3 to C30 cycloalkyl group, It means substituted with a substituent selected from C3 to C15 cycloalkenyl group, C6 to C15 cycloalkynyl group, C2 to C30 heterocycloalkyl group and combinations thereof.

In addition, unless otherwise defined in the present specification, 'hetero' means one or three hetero atoms selected from N, O, S, and P.

In addition, in this specification, "*" means the part connected with the same or different atom or chemical formula.

Hereinafter, a composition for forming a silica film according to an embodiment of the present invention will be described.

The composition for forming a silica film according to an embodiment includes a silicon-containing polymer, a radical inhibitor, and a solvent, and the total content of radical inhibitor components present in the total composition is 10 ppm to 1,000 ppm.

In general, silicon-containing polymers have a high reactivity and, for example, can react rapidly with moisture to form Si-O bonds. In addition to moisture, the silicon-containing polymer can easily react with various compounds having organic functional groups, and can also react with compounds such as alcohol, amine, aldehyde, and the like. For this reason, it is common for solvents in the composition for forming a silica film to use a relatively low reactivity aliphatic compound, aromatic compound, or ether compound.

However, reactive carbon impurities may also be present in these solvents, which may increase the carbon content remaining in the composition by combining with the silicon-containing polymer.

In addition, even when reactive carbon impurities are not present in the solvent, carbon impurities may be introduced into the film material through various environments during the manufacturing process of the silica film. In particular, when the silica film is formed, the composition is cured at a high temperature, and carbon impurities are easily introduced in the process.

The composition for forming a silica film according to an embodiment may reduce the carbon impurity content in the composition by controlling the content of the radical inhibitor component included in the entire composition to 10 ppm to 1,000 ppm, and further, to generate defects in the silica film produced. Can be suppressed.

Here, the 'radical inhibitor component present in the entire composition' may be added as one component when preparing the composition for forming a silica film, or may be derived from a solvent component of the composition for forming a silica film.

The 'radical inhibitor' includes all substances that stabilize the composition by reacting with a radical generated during the process of preparing a silica film or a composition for forming a silica film. These radical inhibitors stabilize the radicals by releasing the hydrogen they have, and they themselves turn into radicals, which remain in a stable form through resonance effects or rearrangement of electrons.

The radical inhibitor may include a phenolic substance and an aromatic amine-based substance, and in one embodiment, the radical inhibitor may be, for example, a phenolic radical inhibitor.

The radical inhibitor may be, for example, phenol, bisphenol, etc., specifically 2-6-di-t-butyl-4-methylphenol (2-6-Di-t-butyl-4-methylphenol), 2-t-butyl- 4-hydroxyanisole (2-tert-butyl-4-hydroxyanisole), 4-methoxyphenol (4-methoxyphenol). Or combinations thereof.

For example, the total content of the radical inhibitor component present in the composition for forming a silica film may be 10 ppm to 900 ppm, more specifically 10 ppm to 500 ppm, 10 ppm to 200 ppm, 10 ppm to 100 ppm, 10 ppm to 80 ppm, 10 ppm to 50 ppm , Or 10ppm to 20ppm, but is not limited thereto.

The composition for forming a silica film according to an embodiment includes a radical inhibitor, and also controls the content of the radical inhibitor component present in the composition for forming the entire silica film to a predetermined range, while reducing the content of carbon impurities and defects. Generation (eg, void or hole defect generation) can be controlled.

Hereinafter, the silicon-containing polymer contained in the composition for forming a silica film will be described.

The silicon-containing polymer includes polysilazane, polysiloxazan, or a combination thereof, and may have, for example, a weight average molecular weight of 1,000 to 100,000.

The silicon-containing polymer may include, for example, a moiety represented by Formula A below.

[Formula A]

In Formula A, R ₁ to R ₃ are each independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C3 to C30 cycloalkyl group , a substituted or unsubstituted C6 to C30 aryl. Group, a substituted or unsubstituted C7 to C30 arylalkyl group, a substituted or unsubstituted C1 to C30 heteroalkyl group, a substituted or unsubstituted C2 to C30 heterocycloalkyl group, a substituted or unsubstituted C2 to C30 alkenyl group , Substituted or unsubstituted alkoxy group, carboxyl group, aldehyde group, hydroxy group, or a combination thereof,

The "*" means a connection point.

For example, the silicon-containing polymer may be polysilazane produced by reaction of halosilane and ammonia.

For example, the silicon-containing polymer contained in the composition for forming a silica film may further include a moiety represented by the following Chemical Formula B, in addition to the moiety represented by the Chemical Formula A.

[Formula B]

R ₄ to R ₇ in Formula B are each independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C3 to C30 cycloalkyl group, a substituted or unsubstituted C6 to C30 aryl group. , Substituted or unsubstituted C7 to C30 arylalkyl group, substituted or unsubstituted C1 to C30 heteroalkyl group, substituted or unsubstituted C2 to C30 heterocycloalkyl group, substituted or unsubstituted C2 to C30 alkenyl group, A substituted or unsubstituted alkoxy group, carboxyl group, aldehyde group, hydroxy group, or a combination thereof,

The "*" means a connection point.

In this case, the silicon-containing polymer includes a silicon-oxygen-silicon (Si-O-Si) bonding moiety in addition to a silicon-nitrogen (Si-N) bonding moiety in its structure, such silicon-oxygen-silicon (Si-O -Si) When the bonding part is hardened by heat treatment, stress can be relieved to reduce shrinkage.

For example, the silicon-containing polymer may include a portion represented by Formula A, a portion represented by Formula B, and further include a portion represented by Formula C below.

[Formula C]

The portion represented by the formula (C) has a structure in which the terminal portion is capped with hydrogen, which may be included in an amount of 15 to 35% by weight based on the total content of Si-H bonds in the polysilazane or polysiloxazan structure. When the part of the formula (3) is included in the above range in the polysilazane or polysiloxazan structure, the oxidation reaction occurs sufficiently during heat treatment, and the SiH ₃ part is prevented from being scattered as SiH ₄ during heat treatment to prevent shrinkage. It is possible to prevent cracks from occurring.

For example, the silicon-containing polymer may be included in an amount of 0.1% to 30% by weight relative to the composition for forming a silica film.

The solvent included in the composition for forming a silica film is not particularly limited as long as it is a solvent capable of dissolving the silicon-containing polymer, and specifically, benzene, toluene, xylene, ethylbenzene, diethylbenzene, trimethylbenzene, triethylbenzene, Cyclohexane, cyclohexene, decaide, naphthalene, dipentene, pentane, hexane, heptane, octane, nonane, decane, ethylcyclohexane, methylcyclohexane, cyclohexane, cyclohexene, p-mentan, dipropyl ether, dibutyl Ether, anisole, butyl acetate, amyl acetate, methyl isobutyl ketone, and combinations thereof.

Meanwhile, the composition for forming a silica film may further include a thermal acid generator (TAG).

Thermal acid generator is an additive for improving the developability of the composition for forming a film forming silica, so that the polymer contained in the composition can be developed at a relatively low temperature.

The thermal acid generator is not particularly limited as long as it is a compound capable of generating acid (H ⁺ ) by heat, but is activated at 90 ° C. or higher to generate sufficient acid, and a low volatility may be selected.

The thermal acid generator may be selected from, for example, nitrobenzyltosylate, nitrobenzylbenzenesulfonate, phenol sulfonate, and combinations thereof.

The thermal acid generator may be included in an amount of 0.01 to 25% by weight based on the total content of the composition for forming a film forming silica, and when included in the above range, the polymer may be developed at a relatively low temperature while improving coating properties. .

The composition for forming a silica film may further include a surfactant.

The surfactant is not particularly limited, for example, polyoxyethylene alkyl ethers such as polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, polyoxyethylene cetyl ether, and polyoxyethylene oleyl ether, polyoxyethylene nonylphenol ether. Polyoxyethylene alkyl allyl ethers such as polyoxyethylene / polyoxypropylene block copolymers, sorbitan monolaurate, sorbitan monopalmitate, sorbitan monostearate, sorbitan monooleate, polyoxyethylene solbi Nonionic surfactants such as polyoxyethylene sorbitan fatty acid esters, such as tanmono stearate, polyoxyethylene sorbitan trioleate, and polyoxyethylene sorbitan tristearate, Ftop EF301, EF303, EF352 (Tochem Co., Ltd.) Products), Megapack F171, F173 (manufactured by Dai Nippon Ink Co., Ltd.), Prorad FC430, FC431 (manufactured by Sumitomo 3M), Asahi Guard AG710, Saffron S-382, SC101, SC102, SC103, SC104, And fluorine-based surfactants such as SC105 and SC106 (manufactured by Asahi Glass Co., Ltd.), organosiloxane polymer KP341 (manufactured by Shin-Etsu Chemical Co., Ltd.), and other silicone-based surfactants.

The surfactant may be included in an amount of 0.001 to 10% by weight based on the total content of the composition for forming a silica film, and when included in the above range, it is possible to improve the dispersibility of the solution and at the same time increase the uniformity of the film thickness during film formation.

According to another embodiment, the above-described step of applying the composition for forming a silica film, drying the substrate coated with the composition for forming a silica film, and curing the composition for forming a silica film may be included. .

The composition for forming a silica film may be applied by a solution process, for example, spin-on coating, slit coating, inkjet printing, or the like.

The substrate may be, for example, a device substrate such as a semiconductor or a liquid crystal, but is not limited thereto.

When application of the composition for forming a silica film is completed, the substrate is then dried and cured. The drying and curing may be performed at a temperature of about 100 ° C. or higher, for example, and may be performed by applying energy such as heat, ultraviolet rays, microwaves, sound waves, or ultrasonic waves.

For example, the drying may be performed at about 100 ° C to about 200 ° C, and the solvent in the composition for forming a silica film may be removed by going through the drying step. In addition, the curing may be performed at about 250 ° C to 1,000 ° C, and the composition for forming a silica film may be converted into a thin film of an oxide film by undergoing a corresponding curing step. The curing step, for example, after performing the primary curing in a steam atmosphere of 250 ℃ to 1,000 ℃, may be carried out secondary curing in a nitrogen atmosphere of 600 ℃ to 1,000 ℃.

According to another embodiment of the present invention provides a silica film comprising a silica component obtained by curing the above-described composition for forming a silica film.

The silica film may be, for example, an insulating film, a separation film, a hard coating film, but is not limited thereto.

An electronic device including the silica film of the present invention is provided. The electronic device may be, for example, a display device such as LCD or LED, or a semiconductor device.

Hereinafter, embodiments of the present invention described above will be described in more detail through examples. However, the following examples are for illustrative purposes only and are not intended to limit the scope of the present invention.

Preparation of composition for silica film formation

Comparative Example 1

The inside of the reactor with a 3 L capacity stirrer and a temperature controller was replaced with dry nitrogen. And after putting it in a pyridine 1,500g reactor, it was maintained at 0 ℃. Subsequently, 100 cc of dichlorosilane was slowly injected over 1 hour. Here, 70 mm 3 of ammonia was slowly injected over 3 hours. Next, dry nitrogen was injected for 120 minutes, and ammonia remaining in the reactor was removed. The obtained white slurry phase product was filtered in a dry nitrogen atmosphere using a 1 μm Teflon filter to obtain 1,000 g of filtrate. After adding 1,000 g of xylene to this, the operation of substituting the solvent for pyridine with xylene using a rotary evaporator was repeated three times in total to adjust the solid content concentration to 20% by weight, followed by pore size of 0.03 It was filtered with a µm Teflon filter.

300 g of pyridine was added to the filtered solution and heated to 100 ° C. to obtain polysilazane having a weight average molecular weight of 5,200. Thereafter, the obtained polysilazane was replaced with a xylene solvent using a rotary evaporator to prepare a composition for forming a silica film having a solid content of 15 ± 0.1% by weight.

The weight average molecular weight of polysilazane in this specification was measured using GPC (PLC Pump 1515, RI Detector 2414) manufactured by Waters.

Comparative Example 2

The inside of the reactor equipped with a 3 L capacity stirring device and a temperature control device was replaced with dry nitrogen. Then, 1,500 g of pyridine was added to the reactor and maintained at 0 ° C. Then, 2-6-di-t-butyl-4-methylphenol (2-6-Di-t-butyl-4-methylphenol) was added to the reactor and the reactor was stirred for 30 minutes. At this time, the added 2-6-di-t-butyl-4-methylphenol (2-6-Di-t-butyl-4-methylphenol) content is added to be 1,100 ppm of the final composition for forming a silica film. Then, 100 cc of dichlorosilane was slowly injected over 1 hour. Here, 70 mm 3 of ammonia was slowly injected over 3 hours. Next, dry nitrogen was injected for 120 minutes, and ammonia remaining in the reactor was removed. The obtained white slurry phase product was filtered in a dry nitrogen atmosphere using a 1 μm Teflon filter to obtain 1,000 g of filtrate. After adding 1,000 g of xylene to this, the operation of substituting the solvent for pyridine with xylene using a rotary evaporator was repeated three times in total to adjust the solid content concentration to 20% by weight, followed by pore size of 0.03 It was filtered with a µm Teflon filter.

300 g of pyridine was added to the filtered solution and heated to 100 ° C. Through the above process, polysilazane having a weight average molecular weight of 5,200 was obtained. Thereafter, the obtained polysilazane was replaced with a xylene solvent using a rotary evaporator to prepare a composition for forming a silica film having a solid content of 15 ± 0.1% by weight.

The weight average molecular weight of polysilazane in this specification was measured using GPC (PLC Pump 1515, RI Detector 2414) manufactured by Waters.

The total amount of 2-6-di-t-butyl-4-methylphenol (2-6-Di-t-butyl-4-methylphenol) component in the composition for forming a silica film was 1,100 ppm.

Comparative Example 3

In Comparative Example 2, except that the content of 2-6-di-t-butyl-4-methylphenol (2-6-Di-t-butyl-4-methylphenol) component in the composition for forming a total silica film was 2,000 ppm In the same manner as in Comparative Example 2, a composition for forming a silica film was prepared.

Example 1

In Comparative Example 2, except that the content of 2-6-di-t-butyl-4-methylphenol (2-6-Di-t-butyl-4-methylphenol) component in the composition for forming a total silica film is 10 ppm A composition for forming a silica film was prepared in the same manner as in Comparative Example 2.

Example 2

In Comparative Example 2, except that the content of 2-6-di-t-butyl-4-methylphenol (2-6-Di-t-butyl-4-methylphenol) component in the composition for forming a total silica film was 50 ppm. A composition for forming a silica film was prepared in the same manner as in Comparative Example 2.

Example 3

2-6-di-t-butyl-4-methylphenol (2-6-Di-t-butyl-4-methylphenol) was added to the composition for forming a silica film prepared in the same manner as in Comparative Example 1. The total content of 2-6-di-t-butyl-4-methylphenol (2-6-Di-t-butyl-4-methylphenol) in the composition for forming a silica film was 50 ppm.

Example 4

In Comparative Example 2, except that the content of 2-6-di-t-butyl-4-methylphenol (2-6-Di-t-butyl-4-methylphenol) component in the composition for forming a total silica film was 100 ppm A composition for forming a silica film was prepared in the same manner as in Comparative Example 2.

Example 5

In Comparative Example 2, except that the content of 2-6-di-t-butyl-4-methylphenol (2-6-Di-t-butyl-4-methylphenol) component in the composition for forming a total silica film was 500 ppm. A composition for forming a silica film was prepared in the same manner as in Comparative Example 2.

Example 6

In Comparative Example 2, except that the content of 2-6-di-t-butyl-4-methylphenol (2-6-Di-t-butyl-4-methylphenol) component in the composition for forming a total silica film is 900 ppm A composition for forming a silica film was prepared in the same manner as in Comparative Example 2.

Example 7

In Comparative Example 2, 2-t-butyl-4-hydroxyanisole (2-tert) instead of 2-6-di-t-butyl-4-methylphenol (2-6-Di-t-butyl-4-methylphenol) A composition for forming a silica film was prepared in the same manner as in Comparative Example 2, except that -butyl-4-hydroxyanisole) was used.

The total content of 2-t-butyl-4-hydroxyanisole (2-tert-butyl-4-hydroxyanisole) in the composition for forming a silica film was 50 ppm.

Example 8

In Comparative Example 2, except for using 4-methoxyphenol (4-methoxyphenol) instead of 2-6-di-t-butyl-4-methylphenol (2-6-Di-t-butyl-4-methylphenol) A composition for forming a silica film was prepared in the same manner as in Comparative Example 2.

The content of 4-methoxyphenol (4-methoxyphenol) in the composition for forming the entire silica film was 50 ppm.

Evaluation 1: Confirmation of carbon impurity content

Carbon impurities in the composition for forming a silica film according to Comparative Examples 1 to 3 and Examples 1 to 8 are measured.

[How to measure]

Comparative Examples 1 to 3 and Examples 1 to 8, respectively, taking 3 cc of the composition for forming a silica film, and using a spin coater (manufactured by MIKASA, MS-A200) to dispense at a central portion of an 8-inch diameter silicon wafer, 1500 Spin was applied for 20 seconds at rpm. Thereafter, soft baking was performed at 150 ° C for 3 minutes, and then a high temperature oxidation reaction was performed to convert the oxide film to 800 ° C. Subsequently, the carbon content in the oxide film was analyzed using a secondary ion mass spectrometer (CAMECA, IMS-6F).

The results are shown in Table 1 below.

Evaluation 2: Measurement of void defects in thin films

In Comparative Examples 1 to 3 and Examples 1 to 8, the composition for forming a silica film was dispensed 3 ml at the nozzle tip of a spinner, and a spin coater (manufactured by MIKASA, MS-) was applied to a central portion of an 8-inch patterned silicon wafer. A200) was applied to spin at 1,500 rpm. Subsequently, the coated thin film was prebaked at 150 ° C. Subsequently, curing was performed at 300 ° C using a furnace for supplying water vapor to convert the film quality to oxide film quality. After that, after removing the oxide film formed through the etching process more than 1,000Å, using defect inspection (KLA's Surf Scan SP-1) equipment, void defects present as a circular engraving or embossing with a diameter of 0.2㎛ or more in the thin film ( void defect).

The results are shown in Table 1 below.

* Criteria for evaluating void defects

(Defect evaluation criteria according to the number of defects with a diameter of 0.2 µm or more)

Very good: less than 100

Good: 100 to 300

Poor: Over 300 and under 600

Very bad: more than 600

Radical inhibitor In the composition
Radical inhibitor
Total content (ppm) In the composition
Carbon impurity content (atoms / cm ³ ) void defect Comparative Example 1 - - 2.56 × 10 ²⁰ Very bad Comparative Example 2 2-6-di-t-butyl-4-methylphenol 1,100 6.73 × 10 ¹⁹ Bad Comparative Example 3 2-6-di-t-butyl-4-methylphenol 2,000 7.81 × 10 ¹⁹ Bad Example 1 2-6-di-t-butyl-4-methylphenol 10 3.10 × 10 ¹⁹ Very good Example 2 2-6-di-t-butyl-4-methylphenol 50 2.53 × 10 ¹⁹ Very good Example 3 2-6-di-t-butyl-4-methylphenol 50 4.12 × 10 ¹⁹ Good Example 4 2-6-di-t-butyl-4-methylphenol 100 2.98 × 10 ¹⁹ Very good Example 5 2-6-di-t-butyl-4-methylphenol 500 5.77 × 10 ¹⁹ Very good Example 6 2-6-di-t-butyl-4-methylphenol 900 6.03 × 10 ¹⁹ Good Example 7 2-t-butyl-4-hydroxyanisole 50 4.33 × 10 ¹⁹ Good Example 8 4-methoxyphenol 50 5.25 × 10 ¹⁹ Good

Referring to Table 1, the composition for forming a silica film according to Examples 1 to 8 in which the total content of the radical inhibitor is within a predetermined range in the composition, the content of carbon impurities is relatively small, and is present in the thin film prepared therefrom. It can be seen that the number of void defects to be performed is also relatively small.

However, it can be seen that the composition for forming a silica film according to Comparative Example 1 without the addition of a radical inhibitor had a relatively large amount of carbon impurities and a relatively large void defect in the thin film. In addition, the composition for forming a silica film according to Comparative Examples 2 and 3 in which the total content of radical inhibitors present in the composition for forming a silica film does not satisfy a predetermined range is relatively high in carbon impurity content, but a thin film prepared therefrom It can be seen that the number of void defects of is relatively large.

Although the preferred embodiments of the present invention have been described in detail above, the scope of the present invention is not limited thereto, and various modifications and improvements of those skilled in the art using the basic concept of the present invention as defined in the following claims It belongs to the scope of the present invention.

Claims (10)

As a composition for forming a silica film,
Silicon-containing polymers,
Radical inhibitors, and
menstruum
Including,
The total content of radical inhibitor components present in the composition for forming a silica film is 10 ppm to 500 ppm.
Composition for forming a silica film. In claim 1,
The radical inhibitor is a composition for forming a silica film, which is a phenolic radical inhibitor. In claim 2,
The phenol-based radical inhibitor is 2-6-di-t-butyl-4-methylphenol (2-6-Di-t-butyl-4-methylphenol), 2-t-butyl-4-hydroxyanisole (2 -tert-butyl-4-hydroxyanisole), 4-methoxyphenol (4-methoxyphenol), or a composition for forming a silica film containing a combination thereof. delete In claim 1,
The silicon-containing polymer composition for forming a silica film comprising polysilazane, polysiloxazan, or a combination thereof. In claim 1,
The composition for forming a silica film having a weight average molecular weight of the silicon-containing polymer is 1,000 to 100,000. In claim 1,
The solvent is benzene, toluene, xylene, ethylbenzene, diethylbenzene, trimethylbenzene, triethylbenzene, cyclohexane, cyclohexene, decahydronaphthalene, dipentene, pentane, hexane, heptane, octane, nonane, decane, Formation of a silica film comprising at least one selected from the group consisting of ethylcyclohexane, methylcyclohexane, p-mentan, dipropyl ether, dibutyl ether, anisole, butyl acetate, amyl acetate, methyl isobutyl ketone, and combinations thereof Dragon composition. In claim 1,
The silicon-containing polymer composition for forming a silica film is contained in an amount of 0.1 to 30% by weight based on the total amount of the composition for forming a silica film. A silica film comprising the silica component obtained by curing the composition for forming a silica film according to any one of claims 1 to 3 and 5 to 8. An electronic device comprising the silica film according to claim 9.