KR102087935B1 - 발광 소자 - Google Patents

발광 소자 Download PDF

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Publication number
KR102087935B1
KR102087935B1 KR1020120154193A KR20120154193A KR102087935B1 KR 102087935 B1 KR102087935 B1 KR 102087935B1 KR 1020120154193 A KR1020120154193 A KR 1020120154193A KR 20120154193 A KR20120154193 A KR 20120154193A KR 102087935 B1 KR102087935 B1 KR 102087935B1
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KR
South Korea
Prior art keywords
light emitting
separation distance
emitting cells
neighboring
semiconductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020120154193A
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English (en)
Korean (ko)
Other versions
KR20140084580A (ko
Inventor
김성균
유영봉
추성호
Original Assignee
엘지이노텍 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엘지이노텍 주식회사 filed Critical 엘지이노텍 주식회사
Priority to KR1020120154193A priority Critical patent/KR102087935B1/ko
Priority to EP13199281.0A priority patent/EP2750192B1/en
Priority to JP2013266895A priority patent/JP2014131041A/ja
Priority to US14/140,765 priority patent/US9837577B2/en
Priority to CN201310741260.XA priority patent/CN104752451B/zh
Publication of KR20140084580A publication Critical patent/KR20140084580A/ko
Application granted granted Critical
Publication of KR102087935B1 publication Critical patent/KR102087935B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
    • H01L25/0753—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls

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  • Led Devices (AREA)
  • Led Device Packages (AREA)
KR1020120154193A 2012-12-27 2012-12-27 발광 소자 Expired - Fee Related KR102087935B1 (ko)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1020120154193A KR102087935B1 (ko) 2012-12-27 2012-12-27 발광 소자
EP13199281.0A EP2750192B1 (en) 2012-12-27 2013-12-23 Light emitting diode device
JP2013266895A JP2014131041A (ja) 2012-12-27 2013-12-25 発光素子
US14/140,765 US9837577B2 (en) 2012-12-27 2013-12-26 Light emitting device
CN201310741260.XA CN104752451B (zh) 2012-12-27 2013-12-27 发光器件

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020120154193A KR102087935B1 (ko) 2012-12-27 2012-12-27 발광 소자

Publications (2)

Publication Number Publication Date
KR20140084580A KR20140084580A (ko) 2014-07-07
KR102087935B1 true KR102087935B1 (ko) 2020-03-11

Family

ID=49876490

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020120154193A Expired - Fee Related KR102087935B1 (ko) 2012-12-27 2012-12-27 발광 소자

Country Status (5)

Country Link
US (1) US9837577B2 (enExample)
EP (1) EP2750192B1 (enExample)
JP (1) JP2014131041A (enExample)
KR (1) KR102087935B1 (enExample)
CN (1) CN104752451B (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106463589A (zh) * 2014-07-23 2017-02-22 深圳市国源铭光电科技有限公司 一种led光源及led灯
CN106463575A (zh) * 2014-07-23 2017-02-22 深圳市国源铭光电科技有限公司 Led光源的制作方法及批量制作方法
KR102231646B1 (ko) * 2014-10-17 2021-03-24 엘지이노텍 주식회사 발광 소자
CN110061027B (zh) * 2015-02-13 2024-01-19 首尔伟傲世有限公司 发光元件
KR102618354B1 (ko) * 2016-04-15 2023-12-28 삼성디스플레이 주식회사 디스플레이 장치
KR101740539B1 (ko) * 2016-11-03 2017-05-29 서울바이오시스 주식회사 발광소자
JP6930092B2 (ja) 2016-11-17 2021-09-01 セイコーエプソン株式会社 電気光学装置、電気光学装置の製造方法、及び、電子機器
JP6959065B2 (ja) * 2017-08-14 2021-11-02 株式会社ジャパンディスプレイ 表示装置
CN117976691A (zh) * 2017-11-08 2024-05-03 首尔伟傲世有限公司 发光二极管单元
JP7206628B2 (ja) * 2018-04-27 2023-01-18 セイコーエプソン株式会社 発光装置およびプロジェクター
WO2021174412A1 (zh) 2020-03-03 2021-09-10 东莞市中麒光电技术有限公司 发光二极管及其制备方法
US12490540B2 (en) 2020-06-24 2025-12-02 Dexerials Corporation Optical semiconductor array
US11464179B2 (en) 2020-07-31 2022-10-11 FarmX Inc. Systems providing irrigation optimization using sensor networks and soil moisture modeling
US12199210B2 (en) * 2021-10-18 2025-01-14 Hamamatsu Photonics K.K. Optical semiconductor element

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080179602A1 (en) * 2007-01-22 2008-07-31 Led Lighting Fixtures, Inc. Fault tolerant light emitters, systems incorporating fault tolerant light emitters and methods of fabricating fault tolerant light emitters
US20090046362A1 (en) 2007-04-10 2009-02-19 Lingjie Jay Guo Roll to roll nanoimprint lithography
JP2009519605A (ja) 2005-12-16 2009-05-14 ソウル オプト デバイス カンパニー リミテッド 複数の発光セルが配列された発光素子

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3904571B2 (ja) * 2004-09-02 2007-04-11 ローム株式会社 半導体発光装置
KR101158073B1 (ko) * 2005-12-13 2012-06-22 서울옵토디바이스주식회사 다수개의 발광 셀이 어레이된 발광 소자
DE102007021009A1 (de) * 2006-09-27 2008-04-10 Osram Opto Semiconductors Gmbh Leuchtdiodenanordnung und Verfahren zur Herstellung einer solchen
KR20110110867A (ko) * 2007-03-13 2011-10-07 서울옵토디바이스주식회사 교류용 발광 다이오드
KR100856230B1 (ko) * 2007-03-21 2008-09-03 삼성전기주식회사 발광장치, 발광장치의 제조방법 및 모놀리식 발광다이오드어레이
US8354680B2 (en) * 2009-09-15 2013-01-15 Seoul Opto Device Co., Ltd. AC light emitting diode having full-wave light emitting cell and half-wave light emitting cell
US9324691B2 (en) * 2009-10-20 2016-04-26 Epistar Corporation Optoelectronic device
KR101601624B1 (ko) * 2010-02-19 2016-03-09 삼성전자주식회사 멀티셀 어레이를 갖는 반도체 발광장치, 발광모듈 및 조명장치
KR101665932B1 (ko) * 2010-02-27 2016-10-13 삼성전자주식회사 멀티셀 어레이를 갖는 반도체 발광장치, 발광모듈 및 조명장치
KR101047778B1 (ko) * 2010-04-01 2011-07-07 엘지이노텍 주식회사 발광 소자 패키지 및 이를 구비한 라이트 유닛
JP2012028749A (ja) * 2010-07-22 2012-02-09 Seoul Opto Devices Co Ltd 発光ダイオード
US9070613B2 (en) * 2011-09-07 2015-06-30 Lg Innotek Co., Ltd. Light emitting device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009519605A (ja) 2005-12-16 2009-05-14 ソウル オプト デバイス カンパニー リミテッド 複数の発光セルが配列された発光素子
US20080179602A1 (en) * 2007-01-22 2008-07-31 Led Lighting Fixtures, Inc. Fault tolerant light emitters, systems incorporating fault tolerant light emitters and methods of fabricating fault tolerant light emitters
US20090046362A1 (en) 2007-04-10 2009-02-19 Lingjie Jay Guo Roll to roll nanoimprint lithography

Also Published As

Publication number Publication date
JP2014131041A (ja) 2014-07-10
US20140183573A1 (en) 2014-07-03
EP2750192A2 (en) 2014-07-02
US9837577B2 (en) 2017-12-05
EP2750192B1 (en) 2019-07-03
EP2750192A3 (en) 2015-12-30
KR20140084580A (ko) 2014-07-07
CN104752451A (zh) 2015-07-01
CN104752451B (zh) 2020-06-05

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