KR102083318B1 - Semiconductor Apparatus - Google Patents

Abstract

According to the present technology, a semiconductor device includes: a controller configured to output a control signal in response to output signals and strobe signals of first and second local transmission lines; And an input / output sense amplifier configured to sense and amplify output signals of the first and second local transmission lines in response to the control signal.

Description

Semiconductor device {Semiconductor Apparatus}

The present invention relates to a semiconductor device, and more particularly, to an input / output sense amplifier.

1 shows an input / output sense amplifier 10 according to the prior art.

Referring to Figure 1 describes the input and output sense amplifier 10 according to the prior art as follows. The input / output sense amplifier 10 according to the related art is connected between the driving voltage VCORE and the first node n1 and the first PMOS transistor P1 to which the output signal of the second node n2 is input, the driving voltage ( The second PMOS transistor P2 connected between the VCORE and the second node n2, and the output signal of the second node n2 is input, between the first node n1 and the third node n3. The output signal of the second local transmission line LIOB is connected between the first NMOS transistor N1, the second node n2, and the third node n3 to which the output signal of the first local transmission line LIO is input. Is connected between the second NMOS transistor N2, the first inverter IV1 for inverting the strobe signal STB, and the third node n3 and the ground voltage VSS, and an output of the first inverter IV1 is inputted. A third NMOS transistor N3 to which a signal is input is included.

In the read operation, the input / output sense amplifier 10 outputs an output signal OUT to the first node n1 by amplifying data transmitted through the local transmission line pairs LIO and LIOB in response to the strobe signal STB. . In general, the strobe signal STB is an enable signal during a read operation. The strobe signal STB is a combination of a chip select signal CS, a row address strobe signal RAS, a column address strobe signal CAS, and a write enable signal WE command. The read operation control signal is generated.

When the strobe signal STB is enabled, the input / output sense amplifier 10 according to the related art senses a voltage difference between the local transmission line pairs LIO and LIOB and sends data to the first node n1 as an output signal OUT. Output At this time, in order to prevent an error of the output data, the input / output sense amplifier 10 is operated for longer than necessary time for data amplification.

However, when the operating time of the input / output sense amplifier 10 is increased, a problem arises in that current consumption of the semiconductor device is increased.

The present invention provides a semiconductor device for controlling an operation timing of an input / output sense amplifier.

According to an exemplary embodiment of the present invention, a semiconductor device may include: a controller configured to output a control signal in response to output signals and strobe signals of first and second local transmission lines; And an input / output sense amplifier configured to sense and amplify output signals of the first and second local transmission lines in response to the control signal.

According to another exemplary embodiment of the present disclosure, a semiconductor device may output an output signal of the first and second local transmission lines in response to a control signal enabled according to a voltage difference between a strobe signal and an output signal of the first and second local transmission lines. It includes an input and output sense amplifier for receiving and sensing the input.

According to the present invention, the operation timing of the input / output sense amplifier is controlled to prevent unnecessary current consumption of the semiconductor device.

1 is a circuit diagram of an input / output sense amplifier according to the prior art;
2 is a schematic block diagram of a semiconductor device according to an embodiment of the present invention;
3 is a detailed circuit diagram of a semiconductor device according to an embodiment of the present invention.

DETAILED DESCRIPTION Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings so that those skilled in the art may easily implement the technical idea of the present invention.

2 is a schematic block diagram of a semiconductor device according to an embodiment of the present invention. A semiconductor device according to an embodiment of the present invention will be described with reference to FIG. 2 as follows.

The semiconductor device according to the embodiment of the present invention includes a controller 100 and an input / output sense amplifier 200.

The controller 100 generates the control signal CNT in response to the output signal and the strobe signal STB of the local transmission line pairs LIO and LIOB.

The input / output sense amplifier 200 amplifies the data transmitted through the local transmission line pairs LIO and LIOB in response to the control signal CNT and outputs the amplified data as the output signal OUT.

When the disabled strobe signal STB is input, the controller 100 outputs a control signal CNT in a disabled state.

When the enabled strobe signal STB is input, the controller 100 detects a voltage difference between the output signals of the local transmission lines LIO and LIOB. The controller 100 outputs the enabled control signal CNT in response to the enabled strobe signal STB when there is no voltage difference greater than or equal to a predetermined level of the output signals of the local transmission lines LIO and LIOB.

However, the controller 100 outputs the disabled control signal CNT when a voltage difference greater than or equal to a predetermined level of the output signal of the local transmission lines LIO and LIOB occurs.

The input / output sense amplifier 200 amplifies the data transmitted through the local transmission line pairs LIO and LIOB in response to the enabled control signal CNT and outputs it as an output signal OUT. However, when the disabled control signal CNT is input, amplification of the data is stopped.

Here, the strobe signal STB is a signal that is generally enabled during a read operation, and includes a chip select signal CS, a row address strobe signal RAS, a column address strobe signal CAS, and a write enable signal WE command. Read operation control signals generated by the combination.

3 is a detailed circuit diagram of a semiconductor device according to an embodiment of the present invention.

The semiconductor device according to the embodiment of the present invention includes a controller 100 and an input / output sense amplifier 200.

The controller 100 includes a detector 110 and a switch 120. The sensing unit 110 includes a first sensing unit 111, a second sensing unit 112, and a sink 113.

First, the controller 100 outputs the control signal CNT in response to the strobe signal STB and the output signals of the first and second local transmission lines LIO and LIOB.

If the voltage difference between the output signals of the first and second local transmission lines LIO and LIOB is equal to or less than a predetermined voltage level, the controller 100 responds to the enabled strobe signal STB and enables the enabled control signal CNT. Outputs At this time, the enable state of the strobe signal STB is logic low, and the enable state of the control signal CNT is logic high.

In contrast, the detector 110 outputs the disabled control signal CNT when the voltage difference between the output signals of the first and second local transmission lines LIO and LIOB is equal to or greater than a predetermined voltage level. At this time, the disable state of the control signal CNT is logic low.

The detector 110 outputs the switching signal SW in response to the strobe signal STB and the output signals of the first and second local transmission lines LIO and LIOB.

When the voltage difference between the output signals of the first and second local transmission lines LIO and LIOB is less than or equal to a predetermined voltage level, the sensing unit 110 responds to the enabled strobe signal STB to disable the switching signal SW. ) At this time, the enable state of the strobe signal STB is logic low, and the disable state of the switching signal SW is logic low.

In contrast, the sensing unit 110 outputs the enabled switching signal SW when the voltage difference between the output signals of the first and second local transmission lines LIO and LIOB is equal to or greater than a predetermined voltage level. At this time, the enable state of the switching signal SW is logic high.

The first sensing unit 111 is connected between the second local transmission line LIOB and the fourth node n4 and receives a third PMOS transistor P3 that receives an output signal of the first local transmission line LIO. Include.

The first sensing unit 111 detects a voltage difference between the first local transmission line LIO and the second local transmission line LIOB, and determines the voltage difference between the first local transmission line LIO and the second local transmission line LIOB. If the voltage difference is greater than or equal to the predetermined voltage level, the switching signal SW is enabled.

The second sensing unit 112 is connected between the first local transmission line LIO and the fourth node n4 and receives a fourth PMOS transistor P4 that receives an output signal of the second local transmission line LIO. Include.

The second sensing unit 112 detects a voltage difference between the first local transmission line LIO and the second local transmission line LIOB, and determines the voltage difference between the first local transmission line LIO and the second local transmission line LIOB. If the voltage difference is greater than or equal to the predetermined voltage level, the switching signal SW is enabled.

The first sensing unit 111 and the second sensing unit 112 enable the switching signal SW when the output signals of the first local transmission line LIO and the second local transmission line LIOB are greater than or equal to a predetermined voltage level. Let's do it. Here, the predetermined voltage level or more is a threshold voltage (Vth) of the transistor for turning on the transistor. That is, the voltage difference between the output signal of the first local transmission line LIO and the second local transmission line LIOB input to the transistor is different by the threshold voltage value of the third PMOS transistor P3 or the fourth PMOS transistor P4. When the first sensing unit 111 and the second sensing unit 112 enables the switching signal (SW).

When the output signal of the first local transmission line LIO has a logic low and the output signal of the second local transmission line LIOB has a logic high, the first sensing unit 111 may be connected to the fourth node n4. Enable the switching signal SW. In contrast, when the output signal of the first local transmission line LIO has a logic high and the output signal of the second local transmission line LIOB has a logic low, the second sensing unit 112 has a fourth node n4. Enable the switching signal (SW).

The sink 113 is connected between the second inverter IV2 and the fourth node n4 and the ground voltage VSS, which inverts the strobe signal STB, and receives the output signal of the second inverter IV2. 4 NMOS transistor N4.

The sink 113 pulls down the voltage in the direction of the voltage ground voltage VSS of the fourth node n4 in response to the enabled strobe signal STB. At this time, the enable state of the strobe signal STB is logic low.

First, when the voltage difference between the output signals of the first and second local transmission lines LIO and LIOB is less than or equal to the threshold voltage of the third PMOS transistor P3 or the fourth PMOS transistor P4, the operation of the switch unit 120 is stopped. The explanation is as follows.

The switch unit 120 outputs the control signal CNT in response to the strobe signal STB and the switching signal SW. The switch unit 120 outputs the enabled control signal CNT in response to the strobe signal STB in the enabled state and the switching signal SW in the disabled state. The strobe signal STB in the enabled state turns on the sixth PMOS transistor P6, and the switching signal SW in the disabled state turns off the fifth NMOS transistor N5. In this case, the switch unit 120 outputs a logic high control signal CNT to the fifth node n5.

Here, the disable state of the strobe signal STB is logic high, and the enable state is logic low. The disable state of the switching signal SW is logic low and the enable state is logic high. The disable state of the control signal CNT is logic low and the enable state is logic high.

The sensing unit 110 disables switching when the voltage difference between the output signals of the first and second local transmission lines LIO and LIOB is less than or equal to the threshold voltage of the third PMOS transistor P3 or the fourth PMOS transistor P4. Output the signal SW

The switch unit 120 outputs the enabled control signal CNT in response to the strobe signal STB in the enabled state and the switching signal SW in the disabled state.

Next, when the voltage difference between the output signals of the first and second local transmission lines LIO and LIOB is greater than or equal to a predetermined voltage level, the operation of the switch unit 120 will be described. Here, the voltage difference above the predetermined voltage level refers to a threshold voltage for turning on the transistor. In an embodiment of the present invention, the voltage difference above the predetermined voltage level is the threshold voltage of the third PMOS transistor P3 and the fourth PMOS transistor P4.

When the voltage difference between the output signals of the first and second local transmission lines LIO and LIOB is greater than or equal to a predetermined voltage level, the sensing unit 110 enables and outputs the switching signal SW.

The switch unit 120 enables the control signal CNT when the enabled switching signal SW is input. When the enabled switching signal SW is input, the switch unit 120 turns on the fifth NMOS transistor to flow a current from the fifth node n5 in the direction of the ground voltage VSS, thereby driving the fifth node n5. The control signal CNT of the logic low is outputted to the.

The input / output sense amplifier 200 is connected between the driving voltage VCORE and the sixth node n6, and the seventh PMOS transistor P7, the driving voltage VCORE and the seventh node to which the output signal of the seventh node n7 is input. An eighth PMOS transistor P8 connected between a seventh node n7 and an output signal of a seventh node n7 is input, connected between a sixth node n6 and a ninth node n9 and having a first local transmission. A sixth NMOS transistor N6 to which an output signal of the line LIO is input, connected between a seventh node n7 and a ninth node n9, and an output signal of a second local transmission line LIOB to which the output signal of the second local transmission line LIOB is input; A seventh NMOS transistor N7 and an eighth NMOS transistor N8 connected between a ninth node n9 and a ground voltage VSS and to which a control signal CNT is input.

The input / output sense amplifier 200 senses and amplifies the output signals of the first and second local transmission lines LIO and LIOB in response to the enabled control signal CNT, and outputs the output signal OUT to the sixth node n6. Will output

The input / output sense amplifier 200 stops the operation when the control signal CNT is input in the disabled state.

1 to 3, the input / output sense amplifier 10 according to the prior art is compared with the semiconductor device of the present invention as follows.

The input / output sense amplifier 10 according to the related art is controlled by the strobe signal STB when sensing and amplifying the output signals of the first and second local transmission lines LIO and LIOB. At this time, the strobe signal STB does not detect the voltage difference between the first and second local transmission lines LIO and LIOB. Therefore, the input / output sense amplifier 10 according to the related art operates depending on only the strobe signal STB even when the voltage difference between the output signals of the first and second local transmission lines LIO and LIOB is sensed to complete the amplification. The timing is determined to consume unnecessary current. However, in the semiconductor device according to the embodiment of the present invention, when the strobe signal STB is enabled, the input / output sense amplifier 200 performs a sense amplification operation and outputs the first and second local transmission lines LIO and LIOB. If the voltage difference of the signal is greater than or equal to a predetermined voltage level (eg, greater than or equal to the turn-on voltages of the third and fourth PMOS transistors P3 and P4), the input / output sense amplifier 200 may stop the operation. Accordingly, the semiconductor device according to the embodiment of the present invention detects not only the strobe signal STB but also whether the voltage difference between the first and second local transmission lines LIO and LIOB is greater than or equal to a predetermined voltage level. The operation timing of 200 may be determined.

As those skilled in the art to which the present invention pertains may implement the present invention in other specific forms without changing the technical spirit or essential features, the embodiments described above should be understood as illustrative and not restrictive in all respects. Should be. The scope of the present invention is shown by the following claims rather than the detailed description, and all changes or modifications derived from the meaning and scope of the claims and their equivalents should be construed as being included in the scope of the present invention. do.

10: input and output sense amplifier 100: control unit
110: detection unit 111: first detection unit
112: second detection unit 113: sink
120: switch unit 200: input and output sense amplifier

Claims (21)

The control signal is output in response to the output signal and the strobe signal of the first and second local transmission lines. A controller configured to; And
And an input / output sense amplifier configured to stop the sense amplification operation on the output signals of the first and second local transmission lines in response to the disable state of the control signal.
delete Claim 3 has been abandoned upon payment of a setup registration fee. The method of claim 1,
The control unit
A detector configured to output a switching signal in response to the output signals of the first and second local transmission lines and the strobe signal; And
And a switch unit configured to output the control signal in response to the strobe signal and the switching signal.
Claim 4 was abandoned upon payment of a set-up fee. The method of claim 3, wherein
The sensing unit
A first sensing unit sensing a voltage difference between output signals of the first and second local transmission lines and outputting a switching signal to a node;
A second sensing unit sensing a voltage difference between output signals of the first and second local transmission lines and outputting a switching signal to the node; And
And a sink unit configured to output the switching signal to the node in response to the strobe signal.
Claim 5 was abandoned upon payment of a set-up fee. The method of claim 4, wherein
The sensing unit
And disabling the switching signal when the strobe signal is enabled, and enabling the switching signal when the voltage difference between the output signals of the first and second local transmission lines is greater than the turn-on voltage of the transistor. .
Claim 6 has been abandoned upon payment of a set-up fee. The method of claim 5,
The first sensing unit
And a PMOS transistor connected between the second local transmission line and the node and receiving an output signal of the first local transmission line.
Claim 7 was abandoned upon payment of a set-up fee. The method of claim 6,
The first sensing unit
And enabling the switching signal when the voltage difference between the first and second local transmission lines is equal to or greater than a turn-on voltage of the PMOS transistor.
Claim 8 has been abandoned upon payment of a setup registration fee. The method of claim 5,
The second sensing unit
And a PMOS transistor connected between the first local transmission line and the node and receiving an output signal of the second local transmission line.
Claim 9 was abandoned upon payment of a set-up fee. The method of claim 8,
The second sensing unit
And enabling the switching signal when the voltage difference between the first and second local transmission lines is equal to or greater than a turn-on voltage of the PMOS transistor.
Claim 10 has been abandoned upon payment of a setup registration fee. The method of claim 3, wherein
The switch unit
And the control signal is enabled when the enabled strobe signal and the disabled switching signal are input, and the control signal is disabled when the switching signal is enabled.
In response to the control signal enabled according to the voltage difference between the strobe signal and the output signal of the first and second local transmission lines, the output signal of the first and second local transmission lines is sensed and amplified, and the control signal is An input / output sense amplifier configured to stop the sense amplification operation on the output signals of the first and second local transmission lines when disabled;
The control signal is
Is enabled when the enabled strobe signal is input, and is disabled when the voltage difference between the output signals of the first and second local transmission lines is greater than the turn-on voltage of the transistor.
delete Claim 13 was abandoned upon payment of a set-up fee. The method of claim 11,
The semiconductor device
And a controller configured to output a control signal in response to the output signals of the first and second local transmission lines and the strobe signal.
Claim 14 has been abandoned upon payment of a set-up fee. The method of claim 13,
The control unit
A detector configured to output a switching signal in response to the output signals of the first and second local transmission lines and the strobe signal; And
And a switch unit configured to output the control signal in response to the strobe signal and the switching signal.
Claim 15 was abandoned upon payment of a set-up fee. The method of claim 14,
The sensing unit
A first sensing unit sensing a voltage difference between output signals of the first and second local transmission lines and outputting a switching signal to a node;
A second sensing unit sensing a voltage difference between output signals of the first and second local transmission lines and outputting a switching signal to the node; And
And a sink unit configured to output the switching signal to the node in response to the strobe signal.
Claim 16 was abandoned upon payment of a set-up fee. The method of claim 15,
The sensing unit
The switching signal is disabled when the strobe signal is enabled, and the switching signal is enabled when the voltage difference between the output signals of the first and second local transmission lines is greater than the turn-on voltage of the transistor. Device.
Claim 17 was abandoned upon payment of a set-up fee. The method of claim 16,
The first sensing unit
And a PMOS transistor connected between the second local transmission line and the node and receiving an output signal of the first local transmission line.
Claim 18 has been abandoned upon payment of a set-up fee. The method of claim 17,
The first sensing unit
And enabling the switching signal when the voltage difference between the first and second local transmission lines is greater than the turn on voltage of the PMOS transistor.
Claim 19 was abandoned upon payment of a set-up fee. The method of claim 16,
The second sensing unit
And a PMOS transistor connected between the first local transmission line and the node and receiving an output signal of the second local transmission line.
Claim 20 has been abandoned upon payment of a setup registration fee. The method of claim 19,
The second sensing unit
And enabling the switching signal when the voltage difference between the first and second local transmission lines is equal to or greater than a turn-on voltage of the PMOS transistor.
Claim 21 has been abandoned upon payment of a setup registration fee. The method of claim 14,
The switch unit
And the control signal is enabled when the enabled strobe signal and the disabled switching signal are input, and the control signal is disabled when the switching signal is enabled.

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