KR102079813B1 - 25.8kV class ENVIRONMENT-FRIENDLY SWITCHGEAR HAVING PARTIAL DISCHARGE DIAGNOSIS FUNCTION AND IOT TECHNOLOGY - Google Patents

Abstract

The present invention provides a 25.8-kV eco-friendly switchgear having a partial discharge diagnosis function and IoT technology which prevents a UHF sensor constructed by a mold method to detect partial discharge from being exposed to air to minimize detection errors by noise and learns partial discharge and temperature detected by a distribution board to acquire a normal operation pattern and diagnose an operating state of the distribution board based on the operation pattern. The 25.8-kV eco-friendly switchgear having a diagnosis function and IoT technology comprises: an enclosure body forming a distribution board; and a diagnosis device installed in the enclosure body to detect partial discharge and temperature of devices in the distribution board to perform diagnosis. The diagnosis device periodically learns partial discharge and temperature by a deep learning method to acquire a prescribed pattern of partial discharge and temperature in which the distribution board operates normally and diagnose whether the operation of the distribution board is normal based on the acquired prescribed pattern.

Description

25.8 kV class ENVIRONMENT-FRIENDLY SWITCHGEAR HAVING PARTIAL DISCHARGE DIAGNOSIS FUNCTION AND IOT TECHNOLOGY}

The present invention relates to a 25.8 kV eco-friendly switchgear equipped with a partial discharge diagnostic function and IoT technology, more specifically, a UHF sensor configured to mold the partial discharge to detect partial discharge is not exposed to air to minimize the detection error due to noise 25.8 kV eco-friendly with the partial discharge diagnosis function and IoT technology to obtain the normal operation pattern by learning the partial discharge and temperature detected in the switchgear, and to diagnose the operating state of the switchgear based on this. It relates to a switchgear.

In general, partial discharge is any part of a power equipment system, such as a power installation, a high voltage switchgear, a high voltage cable, a transformer, a gas insulated switchgear (GIS), a switchgear, and a power receiving facility installed in various industrial and power system substations. This is a generic term for discharges generated in. For example, corona discharge which arises in the vicinity of the tip of an electrode, creeping discharge which arises along the surface of an insulator, void discharge which arises in the space | gap in an insulator, etc. are mentioned.

However, it is very important to detect the abnormality of the power device and to monitor the degree of deterioration of the insulator and to predict the time of repair, and such prediction and management are possible by measuring and monitoring the partial discharge. For this purpose, partial discharge measuring devices are used in various facilities such as high voltage cables, transformers, GIS, switchgear, power receiving facilities, high voltage panels, low voltage panels, motor control panels, and power distribution panels.

Partial discharge in power equipment including switchboard is a phenomenon that occurs during insulation deterioration of power equipment, and it is evaluated as the best method for diagnosing deterioration because it occurs in the last stage of insulation deterioration.

Such partial discharge has a wide electromagnetic wave band and is not easy to detect due to ambient noise. Therefore, a method using UHF antenna has been proposed as the detection method.

However, the conventional UHF sensor is installed in the area for monitoring the partial discharge, and the signal line for transmitting the signal detected from the UHF sensor to the outside should be provided, so that the UHF sensor is exposed to the air so that the noise noise can be detected by the UHF sensor. There is a problem that can be.

Korea Patent Publication No. 10-1986551 (Registration Date: 2019.05.31)

An object of the present invention for solving the above problems is to minimize the detection error caused by noise because the UHF sensor is configured in a mold to detect the partial discharge is not exposed to the air, and also the partial discharge and The present invention provides a 25.8 kV eco-friendly switchgear equipped with a partial discharge diagnosis function and IoT technology to obtain a normal operation pattern by learning the temperature, and to diagnose the operation state of the switchboard.

25.8 kV eco-friendly switchgear with a partial discharge diagnostic function and IoT technology in accordance with an aspect of the present invention for achieving the above object, the enclosure comprising a switchgear; And a diagnosing device installed inside the enclosure to detect and diagnose partial discharges and temperatures of devices inside a switchgear, wherein the diagnostic device comprises: a UHF sensor detecting the partial discharges; A temperature sensor attached to a measurement site to detect a temperature; A repeater for receiving and transmitting signals output from the UHF sensor and the temperature sensor; And a diagnostic device for diagnosing partial discharge and temperature based on a signal received from the repeater and transmitting the diagnostic result to an external device.

The diagnostic apparatus stores the partial discharge and the temperature input from the repeater and learns by a deep learning method every predetermined period of time, thereby obtaining and storing a predetermined pattern of the partial discharge and the temperature in which the switchgear operates normally. The operating state of the switchboard can be diagnosed based on the predetermined pattern.

The diagnoser learns the partial discharge and the temperature in a deep learning manner at regular intervals to obtain a constant pattern of the partial discharge and the temperature at which the switchgear operates normally, and based on the obtained constant pattern, the operating state of the switchgear. Artificial intelligence to diagnose the; A microprocessor for controlling storing the partial discharge and temperature input from the repeater and transmitting the learning and diagnosis results of the artificial intelligence unit to the outside; And a storage unit for storing the partial discharge and the temperature inputted from the repeater, or storing the predetermined pattern obtained by the artificial intelligence unit as data, and storing the learning or diagnosis result as data.

The artificial intelligence unit may include an element derivator for processing an input data to derive an element; A learning engine for organizing a DNA mission using the elements derived from the element derivator, constructing an artificial neural network DNA model using the organized DNA mission, and learning the constructed DNA model; And an actioner that performs a function according to a learning result of the learning engine through an understanding and scheduling module, a determination and prediction module, and a recommendation and action module.

The element deriver may include: a text conversion module configured to convert unstructured data except text among input data into text data; An information extraction module for extracting information from the text data converted by the text conversion module; And an element derivation module for deriving an element to be input to the learning engine from the extracted information.

The learning engine may include: an organization module configured to self-organize a DNA mission by comparing and evaluating elements derived from the element derivator and elements within a predefined organization mission; A configuration module for self-organizing an artificial neural network DNA model capable of learning on a deep learning basis using the organized DNA mission; And it may include a learning module for self-learning the self-constructed DNA model.

The tissue module uses a comparison result of comparing a tissue mission predefined as a function of a position to be input into an artificial neural network model and a position of tissue components, and a DNA mission under self-organization using an element extracted from input data. It may include a blockchain activation unit for organizing and activating a chain and a block by using elements extracted from input data, and organizing and activating a DNA mission that is a combination of a configured block and a chain.

The blockchain activator may include: a position activator for connecting a position matched with an element extracted from input data using a comparison result and activating a position that satisfies an activation condition; A chain generation unit configured to continuously connect a position connected to a position activated by the position activation unit to generate a chain connecting the plurality of positions; A block construction unit for constructing a block including a position constituting a chain generated by the chain generation unit; A mission module activator for activating a mission module with respect to positions included in the constructed block, when a predetermined condition is satisfied according to an organization mission; And a mission organization unit for organizing the DNA mission when all the mission modules corresponding to the mission modules of the tissue mission are activated.

The configuration module may combine functional blocks and chains through a neuroblockchain combination technology to construct a functional submodel, and construct a DNA model by the sum of the functional submodels.

The measurer includes: an understanding and scheduling module for understanding a given situation or identifying intent and providing scheduling using the situation understanding or intent finding result; A determination and prediction module for providing a determination and analysis result for the given situation and for predicting and providing a possible situation; And a recommendation and action module for recommending a decision for the given situation and providing an action according to the analysis result and the prediction result.

The temperature sensor may include a first temperature sensor and a second temperature sensor, and outputs of the first temperature sensor and the second temperature sensor may be respectively connected to a comparator, and a memory and the microprocessor may be respectively connected to the comparator. have.

The first temperature value sensed by the first temperature sensor and the second temperature value sensed by the second temperature sensor are respectively input to the comparator, and the comparator compares the first temperature value with the second temperature value. If the difference value is out of the error range, the error tag may be written to a specific address of the memory.

The microprocessor may recognize data reception and recording in the memory by receiving signals regarding data reception and writing from the memory through ports for data transmission.

The ports for data transmission include a first port for recognizing data transmission and a second port for recognizing a write to the memory, the first port and the second port being coupled to each other The coupling uses the output of the first port as a control signal for controlling the enabling and disabling of pull-up resistance of the second port, and the first port and the second port. The combined signal of may be used as an interrupt signal for the microprocessor.

When the interrupt signal toggles up from low to high and a predetermined time elapses, the microprocessor recognizes that there is a data transfer from the comparator to the memory, and the interrupt signal is high ( When toggled down from high to low and toggled up from low to high again within a predetermined time, the microprocessor writes to the memory of the comparator. I can recognize it.

The first temperature sensor may include a sensor unit including an organic light emitting layer including a delayed fluorescent material; Located in the lower portion of the sensor unit, the temperature transmission unit for transmitting an external temperature to the sensor unit; A first electrode positioned above the sensor unit; A second electrode positioned below the sensor part and spaced apart from the temperature transmitting part; A light amount measurer positioned under the second electrode and measuring the amount of light emitted from the organic light emitting layer; And a temperature blocking unit disposed between the temperature transmitting unit and the second electrode to block the transfer of temperature from the temperature transmitting unit to the second electrode, wherein the sensor unit is configured to delay the fluorescent material by an external temperature. It is possible to detect that the amount of light emitted from the organic light emitting layer is changed according to the temperature transmitted through the temperature transfer part by changing the transition efficiency of the.

The second temperature sensor may include a first electrode; An oxygen vacancy deficient layer positioned on the first electrode; A metal oxide layer on the oxygen bacon deficient layer; An oxygen vacancy filling layer positioned on the metal oxide layer; And a second electrode positioned on the oxygen vacancy filling layer, and a conductive path may be formed through the conductive filament between the oxygen vacancy deficient layer, the metal oxide layer, and the oxygen vacancy filling layer.

The element derivator, the learning engine, and the measurer may further include a DNA tool that provides a plurality of tools to help each perform a function.

The DNA tool includes a conversion tool for converting unstructured data into text; An extraction tool for extracting information; A combination tool for connecting blocks and chains necessary for self-organization of DNA missions and self-organization of DNA models; And a self-adaptive tool for allowing the tissue module, the configuration module, and the learning module to self-organize the DNA mission, and to self-configure and self-learn the DNA model.

According to the present invention, as the UHF sensor is installed in a mold system and detects the partial discharge, the sealed state of the inside and the outside can be maintained. Therefore, there is an advantage that can be prevented from lowering the insulation efficiency due to leakage of the insulation gas.

In addition, since contact with the atmosphere or the insulating gas is blocked, input of noise and the like can be minimized, thereby ensuring the reliability of the detected signal.

And, by learning deep discharge (Deep Learning) and the partial discharge and temperature detected by the UHF sensor and the temperature sensor, to obtain a constant pattern of the partial discharge and temperature in which the switchgear operates normally, based on the obtained constant pattern The operating state of the switchboard can be diagnosed.

1 is a perspective view showing the appearance of a switchgear including a 25.8 kV eco-friendly switchgear with a partial discharge diagnostic function and IoT technology according to the present invention.
Figure 2 is a side view showing the internal configuration of a switchgear including a 25.8 kV eco-friendly switchgear with a partial discharge diagnostic function and IoT technology according to the present invention.
3 is a view showing the configuration of a diagnostic apparatus applied to the 25.8 kV eco-friendly switchgear with a partial discharge diagnostic function and IoT technology according to the present invention.
4 is a view schematically showing the main configuration of a diagnostic apparatus according to an embodiment of the present invention.
5 is a block diagram showing a functional block of an artificial intelligence unit according to an embodiment of the present invention.
6 is a diagram illustrating a method of self-organizing a DNA mission in a tissue module using a neuroblockchain combination according to an embodiment of the present invention.
7 is a diagram illustrating a method of self-organizing a DNA model in a configuration module using a neuroblock chain combination according to an embodiment of the present invention.
8 is a diagram illustrating a configuration further including a DNA tool in an artificial intelligence unit using a deep learning-based self-adaptive learning technology according to an embodiment of the present invention.
9 is a perspective view of a UHF sensor applied to a 25.8 kV eco-friendly switchgear equipped with a partial discharge diagnostic function and IoT technology according to the present invention.
10 is an exploded perspective view of the UHF sensor according to the embodiment of the present invention.
11 is a sectional view showing an installation state of the UHF sensor according to an embodiment of the present invention.
12 is a plan view illustrating a sensor antenna according to an embodiment applied to a 25.8 kV eco-friendly switchgear equipped with a partial discharge diagnosis function and an IoT technology according to the present invention.
13 is a diagram illustrating an example of a temperature detection configuration of a temperature sensor according to another exemplary embodiment.
14A and 14B are circuit diagrams illustrating a combination of a first port and a second port for recognizing a microprocessor according to an exemplary embodiment of the present invention.
15 is a cross-sectional view illustrating a structure of a first temperature sensor according to another embodiment of the present invention.
16 is a cross-sectional view illustrating a structure of a second temperature sensor according to another embodiment of the present invention.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art may easily implement the present invention. As those skilled in the art would realize, the described embodiments may be modified in various different ways, all without departing from the spirit or scope of the present invention.

1 is a perspective view showing the appearance of a switchgear including a 25.8 kV eco-friendly switchgear with a partial discharge diagnostic function and IoT technology according to the invention, Figure 2 is a 25.8 with a partial discharge diagnostic function and IoT technology according to the present invention This is a side view showing the internal structure of a switchgear including a kV eco-friendly switchgear.

1, the 25.8 kV eco-friendly switchgear equipped with a partial discharge diagnosis function and IoT technology according to the present invention, the housing 10 and the housing 10 forming a switchgear consisting of a front door and a rear door in a hexahedral shape It is configured to include a diagnostic device 20 is installed inside the) to detect and diagnose the partial discharge and temperature of the devices inside the switchgear.

Referring to Figure 2, the housing 10 is composed of the front space and the rear space based on the frame of the center, the front door 11 is installed on the front portion of the front space portion, the rear door ( 12) is installed.

The front door 11 and the rear door 12 are provided with a locking device to prevent the door from being opened by a person other than the related person to prevent a safety accident.

In addition, the front safety door is further provided inside the front door 11.

The front door 11 is provided with control circuits such as the power distribution and distribution power situation in the switchgear, operation buttons of the circuit breaker, and a protection relay, and the front door 11 is frequently opened to check the control circuit.

When the front safety door is opened, the front door 11 is to prevent contact with the connecting portion installed inside, and is made of a metal panel as a whole, the main part is provided with a transparent window so that the naked eye can check.

Accordingly, the user may open the front door 11 to prevent the safety accident by the front safety door and visually check the main connection part through the transparent window provided in the front safety door.

Next, the structure of the switchgear which concerns on this invention is demonstrated.

Referring to FIG. 2, the power received through the inlet is connected to the load switch 13.

A load breaker switch (LBS) 13 is connected to a bus power line connected through a bushing through the enclosure and performs a function of opening or energizing power under no load.

That is, in the live state, a predetermined current is inputted, cut off, and energized, and a short circuit occurs in the converter, and when an abnormal current flows, it can be energized for a specified time. It is frequently used as an inlet switch of a water substation facility. Can't.

The fault current uses a power fuse and is adopted for the purpose of preventing the blow-off of the fuse. The load switch may use a power fuse in combination with a three-pole load switch with a trip device if there is a three-phase load.

A disconnector DS may be installed in place of the load switch 13. A disconnecting switch (DS) is used to disconnect the circuit from the power supply for inspection of the equipment and must never be operated in live condition. The reason is that when the knife switch is opened, an arc is generated between the blade and the clip of the switch, the arc is generated and the space is ionized to cause a three-phase short circuit, and the three-phase short circuit exposes the user (operator) to the risk of electric shock. Because there is. In the rear end of the load switch 13, a transformer transformer current transformer 14 is provided.

Transformer transformer current transformer (14, MOF: metering out fit) is a function to convert the power of the high voltage high current to a predetermined power to supply a predetermined power, to connect the integrated wattmeter safely in the switchgear to receive and distribute the high-voltage electricity. . Inside the transformer transformer current transformer 14, a combination of PT and CT is configured to transform / modify the high voltage and the high current into the low voltage and the low current, respectively, so that an integrated power meter can be installed. The transformer transformer current transformer 14 is connected to a maximum capacity meter indicating the maximum power capacity.

In addition, an arrester for grounding a surge voltage is connected between the load switch 13 and the transformer transformer current transformer 14. The arrester serves to ground the surge voltage.

Insulation strengths such as impulse voltage and alternating voltage are determined according to the grid voltage of the electrical equipment. If overvoltage is applied, the electrical equipment is destroyed. In this case, an example of exceeding a predetermined impulse voltage and an alternating voltage includes an overvoltage due to a lightning strike or a circuit opening and closing. Accordingly, the arrester classifies the current when the crest value exceeds the predetermined value, discharges the overcurrent to the ground through the ground wire in a short time by the characteristic element (zinc oxide), and interrupts the rapid current (normal current) in the short time to It is a device to automatically return to normal state.

The vacuum breaker 15 (VCB: Vacuum Circuit Breaker) is an opening and closing device connected to the rear end of the transformer transformer current transformer 14 to cut off power against abnormal current such as an overload and a short circuit accident. The vacuum circuit breaker 15 is a circuit breaker that protects lives and loads by breaking a circuit in a vacuum interrupting method in a vacuum interrupter inside by an external protection relay when an abnormal current such as over current, short circuit, and ground fault occurs. to be.

The protection relay generates an interrupt signal and provides it to the vacuum breaker 15.

The protection relay is connected in parallel with the vacuum breaker to monitor the power line failure and to generate a trip signal to the vacuum breaker in the event of a power line failure. Protective relays include overcurrent relays (OCR), overvoltage relays (OVR), undervoltage relays (UVR), and ground fault relays (GR) .They include frequency relays, ratio-differential relays, phase-delay relays, and selective ground relays, depending on the design conditions. This can be added and installed.

An instrument transformer (16, PT) is connected in parallel with the vacuum breaker to provide high voltage to a constant level.

Instrument transformer 16 is a device that transforms the voltage of the high-voltage circuit to low voltage for use in various instruments such as voltmeter, power meter, frequency meter, power factor meter, protective relay and indicator lamp. The secondary rated voltage is configured to output 110V.

At this time, the power fuse is installed on the primary side for the purpose of preventing the expansion of the accident by blocking the fault current such as burning of the coil, the power fuse is not intended to protect the instrument transformer 16, the instrument transformer 16 When a fault occurs), the power fuse is immediately blown to separate the instrument transformer 16 from the high voltage circuit.

A current transformer (CT) 17 converts a current flowing through the rear end of the vacuum circuit breaker 15 into a current level to provide a protection relay.

The current transformer 17 is a device used in series with a circuit in order to convert a large current of a high voltage circuit into a small current. That is, the current flown in the current transformer 17 is used as a power source for the ammeter of the switchgear, the current coil of the power meter, and the trip coil of the overcurrent relay. Attention should be paid to the fact that if the secondary side is opened while current flows in the primary coil of the current transformer, high voltage is generated at the secondary terminal, causing damage or electric shock.

The mold transformer 18 is installed at the rear end of the circuit breaker 15 to reduce and output a voltage and a current supplied to the power line to a predetermined level.

The mold transformer 18 is molded by insulating the transformer body with epoxy resin, and has a small size and a low fire risk, but has a weak disadvantage in impact voltage.

Power fuses are installed at the input / output terminals of the mold transformer 18 to block transient current, and busbars are installed at the rear ends of the mold transformer 18 to distribute power.

In addition, the power factor correction unit is installed in parallel at the front end of the bus bar to compensate the phase difference between the voltage and the current to improve the power factor.

Although not shown in the figure, the power factor correction unit includes a power factor correction unit including an IGBT stack configured to determine whether to operate the power capacitor according to switching control and a power capacitor connected to the power receiving side power line; A switching signal controller outputting a switching control signal for determining an operation of the IGBT stack; A voltage controller comparing the voltage of the power capacitor with the set first reference voltage to determine a voltage compensation value; Compensates the distribution side current based on the fundamental frequency detected at the power distribution side power line and the voltage compensation value determined by the voltage controller, and outputs the power factor correction unit based on the compensated current and the phase detected at the input voltage of the power receiving side power line. A current command generation unit generating a current; And a current controller configured to detect a target current generated by the current command generator and a current output from the power factor correction unit to generate a compensation current, and provide an operation signal to the switch signal controller according to the generated compensation current. have.

In addition, a series reactor for removing harmonics is provided at the front end of the power factor correction unit, and a discharge coil is installed in parallel between the power capacitor and the series reactor to discharge residual charge of the power capacitor.

In the configuration as described above, in the facility transmitting a special high voltage of 154 KVA or more, the switchgear, such as breakers, disconnectors, ground switchgear, power devices such as current transformers, instrument transformers, lightning arresters, etc. to block the contact with the outside GIS (Gas Insulation Switchgear) is installed inside the enclosure and fills and insulates insulating gas SF ₆ .

That is, GIS keeps all the electrical parts to which high voltage is applied in a state in which contact with the outside is blocked, and wraps it in a sealed enclosure so as not to damage the insulation, and has a non-combustible and non-toxic sulfur hexafluoride which eliminates the risk of explosion in the sealed box. (SF ₆ ) will be charged.

As such a GIS, cubicle-type GIS is used at high pressure as well as high pressure. That is, a cubicle-type GIS in which breakers, power busbars, and the like are placed in a sealed box of a certain type and filled with insulating gas is also used in the enclosure of the switchgear.

Next, a description will be given of a diagnostic apparatus 20 for detecting and detecting partial discharge and temperature.

3 is a view showing the configuration of a diagnostic device applied to the 25.8 kV eco-friendly switchgear with a partial discharge diagnostic function and IoT technology according to the present invention.

Referring to FIG. 3, the diagnostic device 20 includes a UHF sensor 100, a temperature sensor 200, a repeater 300, and a diagnostic device 400.

The UHF sensor 100 detects partial discharge, and is integrally installed in the enclosure 10 or the enclosure of the GIS provided in the enclosure 10 to detect and output the partial discharge generated from the inside.

The UHF sensor 100 is provided in plurality, and is installed in the enclosure 10 of the vicinity where frequent partial discharges are generated or the enclosure of the GIS filled with insulating gas.

The diagnostic apparatus 400 stores the partial discharge and the temperature input from the repeater 300 and learns by a deep learning method every predetermined period, and acquires and stores a constant pattern of the partial discharge and the temperature in which the switchgear operates normally. The operation state of the switchboard is diagnosed based on the obtained constant pattern.

In addition, the diagnostic apparatus 400 sets the partial discharge or the temperature to X or Y using the partial discharge and the temperature input from the repeater 300 as input variables, and learns the partial discharge and the temperature so that the switchgear operates normally. = aX + b is obtained, and when the partial discharge and the temperature input from the repeater 300 are out of a predetermined range based on the obtained Y = aX + b, there is an operation abnormality in the portion where the partial discharge and the temperature are detected. It can be diagnosed as. At this time, a and b are constant constants at Y = aX + b.

The diagnostic apparatus 400 includes an artificial intelligence unit 401, a microprocessor 402, and a storage unit 403, as shown in FIG. 4.

4 is a view schematically showing the main configuration of a diagnostic apparatus according to an embodiment of the present invention.

The artificial intelligence unit 401 learns the partial discharge and the temperature by a deep learning method every predetermined period (day, week, month, year, etc.), thereby obtaining a constant pattern of the partial discharge and the temperature in which the switchgear operates normally. The operation state of the switchboard is diagnosed based on the obtained constant pattern.

The microprocessor 402 controls the storage of the partial discharge and the temperature input from the repeater 300 in the storage unit 403, and transmits the learning and diagnostic results of the artificial intelligence unit 401 to the outside. .

The storage unit 403 stores the partial discharge and temperature input from the repeater 300, or stores a predetermined pattern obtained by the artificial intelligence unit 401 as data, and stores the learning result or the diagnosis result as data.

In addition to the artificial intelligence unit 401, the microprocessor 402, and the storage unit 403 described above, the diagnostic apparatus 400 according to the present invention further includes a communication unit for transmitting the diagnosis result to the outside, and an output unit for outputting the diagnosis result. It may include. The output unit may include a display unit for outputting a diagnosis result on a screen, and a speaker for outputting the diagnosis result as a voice.

5 is a block diagram showing a functional block of an artificial intelligence unit according to an embodiment of the present invention.

Referring to FIG. 5, an artificial intelligence unit 401 according to an embodiment of the present disclosure may include an element derivator 410, a learning engine 420, and an action 430.

That is, in the present invention, the structured data and the unstructured data may be processed by the element derivator 410 to derive the element, and the learning engine 420 may use the element to perform self-adaptive learning and use the learning result. Including the action device 430, it is possible to provide a system capable of modular and understanding the situation and scheduling, decision and prediction, recommendation and situation actions, etc., and can provide a system tailored to various situations .

The element derivator 410 may process input data to derive elements. That is, the element derivator 410 may derive an element which is input information of the learning engine 420 from input data including structured data and unstructured data, and the element derivator 410 is a text conversion module. 411, an information extraction module 412, and an element derivation module 413.

The text conversion module 411 may convert unstructured data other than text among the input data into text data (Text Conversion). In particular, the text conversion module 411 may convert unstructured data including an image, an image, and audio except for text into text data.

The information extraction module 412 may extract information from the text data converted by the text conversion module 11 (Information Extraction). In addition, the information extraction module 412 can extract necessary information from input data in the form of text that is not a conversion target in the text conversion module 411.

The element derivation module 413 may derive an element to be input to the learning engine 420 from the extracted information (Element Identification & Elicitation).

The learning engine 420 self-organizes a DNA mission using elements derived from the element derivator 410, and uses a deep learning-based artificial neural network DNA model using a self-organized DNA mission. ) Can be self-organizing and train a self-organizing DNA model.

The present invention includes a learning engine 420 that combines self-adaptive technology with deep learning-based learning technology to self-organize a DNA mission and self-construct a DNA model, thereby understanding the situation and identifying the model by itself. It can effectively implement the human brain mechanism to solve the situation.

As shown in FIG. 5, the learning engine 420 may include an organization module 421, a configuration module 422, and a learning module 423.

The organization module 421 may organize data to analyze a recognition object, and may self-organize a DNA mission using an element derived from the element derivator 410 (Self-Organization of DNA Mission). More specifically, the organization module 421 compares and evaluates elements input over time and mission elements of a predefined recognition object (peripheral place) tissue to organize DNA missions that change over time. Can be generated. Here, the missions are missions of a predefined tissue, and the DNA missions are different from each other in a mission that the tissue module 421 of the present invention self-organizes.

Meanwhile, the DNA mission organized by the organization module 421 may be a combination of blocks of organizations and chains. That is, the tissue module 21 may organize DNA missions by combining blocks and chains of tissue using a neuro block chain combination technology. For example, the combination of each block and its corresponding chain in the organization of data for analysis of recognition objects. In addition, according to the embodiment, the DNA mission may include a special DNA mission consisting of a combination of chains.

In addition, the DNA mission may be composed of the sum of the mission modules, and the mission module may be a function of the elements received from the element derivator 410 and the positions of the organization. At this time, the position of the tissue component may be predetermined.

In the present invention, in order for the artificial intelligence unit 401 to support a human task (mission), it is possible to consider the elements required for performing the feature detection mission and the position of each feature for the organization of the data. Such an organization may, for example, take the form of a hierarchical tree structure or a parallel structure, in which a node-to-node connection (i.e., a position-to-position connection within a data organization (chain)). If you expand it to the whole organization, it can be seen as a chain, that is, a connection between groups (weather conditions in the organization) which is composed of a tree structure (block).

When using the neuroblockchain combination technology in the organization module 421, a chain is a connection between positions and positions in a data structure, and a block of organizations is a position (characteristic) and a position (image) in each other. A group of connected data in which one data may consist of one block or one data may consist of several blocks depending on the characteristic condition.

6 is a diagram illustrating a method of self-organizing a DNA mission in a tissue module using a neuroblock chain combination according to an embodiment of the present invention.

The organization module 421 of the deep learning-based learning engine 420 according to an embodiment of the present invention may include an organization block (Block i, Block j, Block k, etc.) and a chain (Chain l) as shown in FIG. 6. , Chain m, Chain n, etc.) can be combined to construct a DNA mission. Constructed DNA missions can be expressed as the sum of elements and mission modules that are a function of position.

In addition, the DNA mission may include a special DNA mission consisting of a combination of chains. That is, according to the embodiment, the DNA mission may be composed of a combination of chains without block of tissue.

The configuration module 422 may self-assemble a deep learning-based artificial neural network DNA model using a self-organized DNA mission (Self-Composition of DNA Model). That is, the configuration module 422 may receive a DNA mission from the tissue module 421 and construct an artificial neural network DNA model that can be learned on a deep learning basis. Since the DNA model self-constructed by the configuration module 422 is constructed using a DNA mission self-organized by elements input over time, the DNA model may be a model that flexibly changes according to input data.

The DNA model may be a combination of blocks of functions and chains. That is, the configuration module 422 may organize a DNA model by combining a block and a chain of functions using a blockchain combination technology.

In addition, the configuration module 422 may self-construct a DNA model composed of the sum of the functional submodels.

Here, the functional block is a functional set of situations that mimic the human brain situation determination method to enable learning in an artificial neural network model, and one tissue block in the DNA mission is composed of one functional block in the DNA model. Can be. A simple situation may be judged by a single thought by a human being, but a complicated situation may be assumed by a plurality of thoughts rather than a single thought. In the process of constructing a model for solving a mission, such a concept can be used to self-organize a DNA model by combining functional blocks and chains by classifying complex situations by function and grouping them for judgment.

7 is a diagram illustrating a method of self-organizing a DNA model in a configuration module using a neuroblock chain combination according to an embodiment of the present invention.

The configuration module 422 of the deep learning-based learning engine 420 according to an embodiment of the present invention may combine functional blocks and chains through a neuroblockchain combination technology, as shown in FIG. 7. Thus, a functional submodel (Functional Submodel i, Functional Submodel j, Functional Submodel k, Functional Submodel m, Functional Submodel n, etc.) can be constructed, and a DNA model can be constructed from the sum of the functional submodels.

Meanwhile, in FIG. 5, the learning module 423 may self-learn a self-constructed DNA model (Self-Learning of DNA Model). That is, the learning module 423 is a component for learning the DNA model configured in the configuration module 422, can learn through an artificial neural network technology, and can deliver the learning result to the measurer 430.

The measurer 430 may perform a function according to the learning result of the learning engine 420 through the understanding and scheduling module 431, the determination and prediction module 432, and the recommendation and action module 433. As shown in FIG. 5, the action 430 may be configured to include an understanding and scheduling module 431, a decision and prediction module 432, a recommendation and action module 433, each module having common software. Can be

Referring to the structural aspects of the measurer 430 according to the present invention, the understanding and scheduling module 431 may understand a given situation or grasp the intention, and provide scheduling using the result of the situation understanding or intention grasp. Understanding & Scheduling.

The determination and prediction module 432 may provide a determination and analysis result for a given situation, and may predict and provide a possible situation (Decision & Prediction).

The recommendation and action module 433 may recommend a decision about a given situation using the analysis result and the prediction result, and provide an action accordingly (Recommendation & Action). To this end, the recommendation and action module 433 may receive an analysis result and a prediction result from the determination and prediction module 432.

8 is a diagram illustrating a configuration further including a DNA tool in an artificial intelligence unit using a deep learning-based self-adaptive learning technique according to an embodiment of the present invention.

As illustrated in FIG. 8, the artificial intelligence unit 401 using the deep learning-based self-adaptive learning technology according to the embodiment of the present invention may further include a DNA tool 440.

The DNA tool 440 may provide a plurality of tools to the element derivator 410, the learning engine 420, and the handler 430. That is, the DNA tool 440 may provide a tool to help the element derivator 410, the learning engine 420, and the action 430 perform their respective functions.

More specifically, the DNA tool 440 includes a conversion tool 441 for converting unstructured data into text, an extraction tool 442 for extracting information, and a self-organization of a DNA mission. It may include a combination tool 443 that connects the blocks and chains necessary for self-organization of the DNA model.

In addition, the tissue module 421, the configuration module 422, and the learning module 423 are self-adapted tools (Self-Adapted Tools) that help self-organize and self-learn DNA missions, DNA models ( 444 may be further included.

9 is a view showing a perspective view of a UHF sensor applied to the 25.8 kV eco-friendly switchgear with a partial discharge diagnostic function and IoT technology according to the invention, Figure 10 is an exploded perspective view of the UHF sensor, Figure 11 is a UHF It is a figure which shows sectional drawing of the installation state of a sensor.

9 to 11, the UHF sensor 100 according to the present invention includes a sensor flange 110, a sensor support 120, a sensor antenna 130, a sensor cover 140, and a connector 150. It is composed.

The sensor flange 110 is coupled to the outer surface of the enclosure (B, or enclosure), and is coupled to the enclosure (B) by a flange fixing screw 111 that passes through the formed through hole (not shown).

At this time, a predetermined hole is formed in the enclosure B in which the sensor flange 110 is installed, and the outer diameter of the sensor flange is formed relatively larger than the diameter of the hole formed in the enclosure B.

In addition, in order to seal the inside and the outside of the enclosure (B) as the sensor flange 110 is coupled to the enclosure (B), the contact surface of the sensor flange 110 and the enclosure (B) flange o-ring for sealing ( 113) is installed.

In addition, a flange groove 112 is formed in the sensor flange 110 so that the flange o-ring 113 guides the position of the sensor flange 110.

The sensor support 120 is coupled to the inner surface of the sensor flange 110 to support the sensor antenna 130, which will be described later.

The central axis of the sensor support 120 and the central axis of the sensor flange 110 may be installed on the same axis, and the sensor support 120 is coupled to the sensor flange 110 by the support coupling screw 121.

The sensor antenna 130 is attached to the sensor support 120 and detects a frequency generated by partial discharge.

Partial discharge refers to an incomplete breakdown of the electrode that does not intersect between the electrode and the electrode that occur at the voids of the solid insulator, the gas droplets of the liquid insulator, the contact interface of the dissimilar insulator, and the metal surface. When such partial discharge occurs, heat generation, collision of charged particles, chemical reaction by molecules and ions damage the surrounding solid insulator.

Partial discharge is accompanied by frequency, and the frequency range generated is Ultra High Frequency (UHF) in the range of 300 MHz to 1.5 GHz for the high voltage switchgear.

Accordingly, the sensor antenna 130 detects the UHF frequency accompanied by the partial discharge.

12 is a plan view showing a sensor antenna according to an embodiment applied to a 25.8 kV eco-friendly switchgear equipped with a partial discharge diagnosis function and IoT technology according to the present invention.

The pattern of the antenna is important for detecting microwaves in the 300MHz to 1.5GHz range caused by partial discharge.

Referring to FIG. 12, the sensor antenna 130 is formed in a pair of left and right, and the antennas on the left and right sides are configured to have point symmetry.

At this time, the antenna pattern of one side is composed of a fan-shaped base plate 131 and a plurality of side plates 132 extending from the base plate 131 at each side of the base plate 131 and having a predetermined width.

Here, the side plate 132 is configured to alternate from side to side at each side of the base plate 131, the width of the side plate 132 becomes smaller as the closer to the center portion, the front end of the side plate 132 toward the center direction It is formed to be tapered.

The side plates 132 of this configuration may be provided by three left and right.

The sensor cover 140 is coupled to the sensor flange 110 inside the enclosure, and seals the outside of the sensor support 120 and the sensor antenna 130, and the sensor support 120 and the sensor antenna 130 inward. It is provided with a space that can accommodate the.

Here, the sensor cover 140 may be coupled to the sensor flange 110 by a coupling screw. To this end, a through hole is formed through which the cover coupling screw 141 passes through the outer circumferential direction of the sensor cover 140, and the sensor cover 140 is connected to the sensor flange 110 by the cover coupling screw 141 through the through hole. Combined.

At this time, between the sensor flange 110 and the sensor cover 140, in a configuration for sealing, the cover groove 142 is formed in the circumferential direction on the contact surface of the sensor cover 140 in contact with the sensor flange 110, The cover o-ring 143 is installed in the cover groove 142.

That is, the cover O-ring 143 is compressed while being coupled by the coupling of the cover coupling screw 141 to prevent the sensor antenna 130 from being exposed to the inner insulating gas (or air) of the enclosure (B).

The connector 150 is installed on the outer surface of the sensor flange 110 and is electrically connected to the sensor antenna 130 to perform a function of outputting a signal.

That is, the connector 150 outputs the frequency detected by the sensor antenna 130 to the outside, and the connector 150 is a signal line (not shown) to the left and right antennas constituting the sensor antenna 130, respectively. Will be connected.

The temperature sensor 200 is attached to the measurement site to detect the temperature and oscillates the resonance frequency of the crystal generated according to the temperature change, and uses the change of the resonance frequency according to the temperature change.

In other words, applying a radio frequency (RF) potential having a constant frequency through an interdigital transducer (IDT) electrode formed on one surface of the crystal repeatedly generates a first-order piezoelectric effect and a second-order piezoelectric effect and generates a surface acoustic wave having a constant frequency. do. Here, the generated resonant frequency is varied according to the temperature change, the predetermined difference is generated between the resonant frequency generated at the set temperature and the resonant frequency generated at the temperature change.

At this time, the power applied to the crystal uses an induced electromotive force derived from the power line, and the resonant frequency oscillated in the crystal is amplified and output using a resonator.

Accordingly, the temperature can be detected by comparing the resonance frequency at the set temperature according to the natural vibration of the crystal with the oscillation frequency oscillated according to the temperature change.

In addition, when the intrinsic resonant frequency of the crystal provided in the temperature sensor 200 is applied differently, and the resonant frequency oscillated by the applied crystal is detected, it is possible to detect the position where each temperature sensor 200 is installed.

The temperature sensor 200 is directly attached to a bus bar and a transformer requiring temperature monitoring, and oscillates a frequency according to a change in temperature to wirelessly transmit it to the repeater 300.

The repeater 300 receives and outputs signals output from the UHF sensor 100 and the temperature sensor 200, and is oscillated and output from the frequency of the partial discharge detected from the UHF sensor 100 and the temperature sensor 200. It receives and outputs the resonant frequency of the crystal. At this time, each received frequency may be configured to be output by giving an identification code.

The diagnostic apparatus 400 performs a function of diagnosing partial discharge and temperature based on a signal received from the repeater 300 and transmitting a diagnosis result to an external device.

The diagnostic apparatus 400 receives the high frequency signals detected from the UHF sensor 100 and the temperature sensor 200, and analyzes the received high frequency signals to detect partial discharge or detect overheating.

In this case, the diagnostic apparatus 400 may be configured to accumulate (calculate) partial discharge detection data and determine whether there is an abnormality of the switchgear.

In addition, the detection of the temperature made by the diagnostic apparatus 400 receives the resonant frequency output from the temperature sensor 200 and compares the resonant frequency oscillated according to the temperature change and the resonant frequency at the set temperature according to the natural vibration of the crystal. The temperature can be detected.

In addition, the diagnostic apparatus 400 may be configured to display the determined partial discharge state as an image on the display, or to transmit a detection item as an alarm to the manager's mobile device when the partial discharge detection, abnormality and overheat are detected.

According to the present invention, since the UHF sensor configured to detect the partial discharge can be maintained in the mold system, it is possible to maintain the sealed state inside and outside, thereby preventing the reduction of the insulation efficiency due to leakage of the insulating gas.

In addition, since contact with the atmosphere or the insulating gas is blocked, input of noise and the like can be minimized, thereby ensuring the reliability of the detected signal.

13 is a diagram illustrating an example of a temperature detection configuration of a temperature sensor according to another exemplary embodiment.

Referring to FIG. 13, the temperature sensor 200 according to another embodiment of the present invention includes a first temperature sensor 210 and a second temperature sensor 220.

Outputs of the first temperature sensor 210 and the second temperature sensor 220 are respectively connected to the comparator 230, and the memory 403 and the microprocessor 402 are respectively connected to the comparator 230.

That is, the first temperature value detected by the first temperature sensor 210 and the second temperature value detected by the second temperature sensor 220 are respectively input to the comparator 230, and the comparator 230 is the first temperature. The error tag is compared to the second temperature value and the error tag is written to the memory 240 when the difference value is out of the error range.

In this case, the memory 240 is connected to the microprocessor 402 through a plurality of lines for transmitting data transmission and control commands. The memory 240 may be a separate storage medium or a partial area of the storage 403.

Accordingly, the microprocessor 402 receives a signal regarding data reception and writing from the memory 240 through ports 250 connected to a plurality of lines for data transmission.

Accordingly, the microprocessor 402 recognizes that there is data reception and writing in the memory 240.

The memory 240 for data storage is generally a nonvolatile memory (NVM) and may be, for example, an EEPROM (Electrically Erasable Programmable Read-Only Memory). When implemented as an EEPROM, the memory 240 erases internal data by applying an electrical signal, so that a dedicated eraser for data deletion is not necessary, and a write and delete may be performed using a single writer. Such an EEPROM may have a limit of about 1 million repeated writes.

The ports 250 for data transmission may include a port (a first port) for recognizing data transmission and a port (a second port) for recognizing a write to the memory 240. The first port for recognizing data transmission may include, for example, an Energy Harvest Field Detection (EH_FD) port. The second port for recognizing a write to the memory 240 may include, for example, a Radio Frequency Write In Progress (RF_WIP) port.

In addition, the plurality of ports 250 may also include ports for receiving data from the repeater 300. For example, for I2C wired communication, the microprocessor 402 receives the difference between the two temperature sensors received through the relay 300 via wired communication through a serial clock (SCL) port and / or a serial data (SDA) port. If the value is out of the error range, the error tag may be written to the memory 240.

Operation characteristics of the first port for recognizing data transmission are as follows.

Here, the temperature sensors 210 and 220, the comparator 230, the memory 240, and the microprocessor 402 operate by receiving power from a power supply unit (not shown).

The first port is a port for detecting the presence or absence of data transmission from the comparator 230. When the data transmission is confirmed, the signal waveform is toggled up.

On the other hand, the operating characteristics of the second port for recognizing the recording to the memory 240 is as follows.

When the comparator 230 performs the writing operation on the memory 240 while the operating power is being input from the power supply unit, the signal waveform that was toggled up is toggled down, after a predetermined time has elapsed. The signal waveform is toggled up again.

The second port may detect that a write to memory 240 of comparator 230 was performed by detecting that the toggled up signal waveform was toggled down and toggled up again.

According to the present invention, the comparator 230 generates an interrupt to the microprocessor 402 so that the microprocessor 402 can recognize the data reception and memory writes of the comparator 230.

The present invention provides a first port for recognizing a data transfer from two temperature sensors 210 and 220 to a comparator 230 for an interrupt and a second port for recognizing a write to a memory 240 of the comparator 230. Use a combination. In this case, as described above, the first port may be an EH_HD port, and the second port may be an RF_WIP port.

The combination of the first port and the second port may use a method of using the output of the first port as a control signal for controlling the enabling and disabling of pull-up resistance of the second port. have.

14A and 14B are circuit diagrams illustrating a combination of a first port and a second port for recognizing a microprocessor according to an exemplary embodiment of the present invention.

In FIG. 14A and FIG. 14B, the first port is an EH-FD port, and the second port is an RF_WIP port.

First, when the temperature data detected from the first temperature sensor 210 and the second temperature sensor 220 is transmitted to the comparator 230, the comparator 230 compares the two temperature data and if the difference is outside the error range The error tag is recorded at a specific address of the memory 240.

At this time, the memory 240 outputs an ON signal indicating that there is data transmission to EH_FD. The output of the EH_FD port may be input to the VCC port of the microprocessor 402 to be used as an operating power source, and may also be used as a signal for recognizing that there is data transmission from the comparator 230 to the memory 240.

The RF_WIP signal is low after a certain time has elapsed when the output toggles from high to low when a data recording of an error tag is generated from the comparator 230 to the memory 240. ) Is a signal indicating that a recording has occurred by toggle-up from high to high.

This RF_WIP port is basically an open-drain port because of its nature, the output can not be generated without a pull-up resistor outside the port. Here, RF_WIP is a signal that can never be generated when EH_FD is low because a write operation occurs on the premise that there is data transmission in the comparator 230. Thus, in FIG. 14A and FIG. 14B, the EH_FD port and the RF_WIP port are combined to be controlled according to the enable EH_FD signal of the pull-up resistor of the RF_WIP. That is, in FIG. 14A and FIG. 14B, the output signal of the RF_WIP output and the GEN INT terminal is configured as EH_FD + RF_WIP, which is a combination of EH_FD and RF_WIP.

The resistor R11 of the output terminal of GEN INT is a collector resistor of transistor Q2 and a pullup resistor of RF_WIP. If EH_FD is low in GEN INT, R11 does not act as a pull-up resistor because the output transistor Q2 is conductive and the EH_FD + RF_WIP node is connected to GND. If EH_FD is high, output transistor Q2 is not conducting and R11 can operate as a pull-up resistor, and EH_FD + RF-WIP goes high to recognize that there is data transfer. In this state, comparator 230 When the data write occurs from the memory 240 to the memory 240, the EH_FD + RF_WIP signal is toggled low for a predetermined time and then toggled high again, thereby recognizing that a write operation has occurred.

15 is a cross-sectional view illustrating a structure of a first temperature sensor according to another embodiment of the present invention.

Referring to FIG. 15, the first temperature sensor 210 according to the present invention is a resistance variable temperature sensor, and includes a sensor unit 510, a temperature transmitter 520, a first electrode 530, and a second electrode 540. ), A light amount measuring unit 550 and a temperature blocking unit 560.

The sensor unit 510 includes an organic light emitting layer including a delayed fluorescent material.

The temperature transmitter 520 is positioned below the sensor unit 510 and transmits an external temperature to the sensor unit 510.

The first electrode 530 is positioned above the sensor unit 510.

The second electrode 540 is positioned below the sensor unit 510 and is spaced apart from the temperature transmitting unit 520.

The light amount measuring unit 550 is positioned below the second electrode 540 and measures the amount of light emitted from the organic light emitting layer.

The temperature blocking unit 560 is positioned between the temperature transmitting unit 520 and the second electrode 540 to block the temperature transfer from the temperature transmitting unit 520 to the second electrode 540.

Since the sensor unit 510 includes the organic light emitting layer including the delayed fluorescent material, the amount of light emitted from the organic light emitting layer is changed according to the temperature transmitted through the temperature transmitting unit 520.

That is, since the sensor unit 510 includes the delayed fluorescent material in the organic light emitting layer, when the external temperature is transmitted to the organic light emitting layer, the re-interval transfer efficiency of the delayed fluorescence is changed by the external temperature, so that the organic light emitting layer The amount of light emitted is changed.

Therefore, since the luminous efficiency of the organic light emitting layer is changed, it is possible to detect a change in temperature by measuring the change in the light quantity or the luminous efficiency of the organic light emitting layer through the light quantity measuring unit 550. For example, the change in the amount of light measured by the light amount measuring unit 550 may correspond to a preset reference to determine the temperature change.

16 is a cross-sectional view illustrating a structure of a second temperature sensor according to another embodiment of the present invention.

Referring to FIG. 16, the second temperature sensor 220 according to the present invention includes a first electrode 610, a deficient oxygen vacancy layer 620, and a metal oxide layer 630. And an oxygen vacancy layer 640 and a second electrode 650.

That is, in the second temperature sensor 220, the oxygen vacancy deprivation layer 620 is positioned on the first electrode 610, the metal oxide layer 630 is positioned on the oxygen vacancy deprivation layer 620, and the metal oxide layer is located. The oxygen vacancy-filling layer 640 is positioned on the 630, and the second electrode 650 is positioned on the vacancy-filling layer 640.

The second temperature sensor 220 according to another embodiment of the present invention is a resistance-shift metal oxide based temperature sensor using the metal oxide layer 630.

The metal oxide layer 630 is a layer that senses temperature locally in the device, and a resistance variation (current change) occurs according to the temperature.

The second temperature sensor 220 includes a metal oxide layer 630, an oxygen vacancy-filling layer 640 that is an upper layer of the metal oxide layer 630, and an oxygen vacancy-deficient layer that is a lower layer of the metal oxide layer 630. Conductive paths are formed in the conductive filament through the conductive filament, thereby localizing the metal oxide layer 630 whose resistance value changes with temperature, thereby causing unstable effects on device operation. (sub-oxide, defect, etc.) can be suppressed.

That is, the second temperature sensor 220 forms a conductive path through conductive filaments provided in the upper layer and the lower layer of the metal oxide layer 630 to use only the metal oxide layer 630 for the temperature sensing operation. By localizing the transition metal oxide, this resulted in a stable and stable metal oxide-based temperature sensor than the existing temperature sensor.

The oxygen vacancy depletion layer 620 is an oxide layer deficient in the oxygen vacancy due to the lower portion of the metal oxide layer 630. The oxygen oxide deprivation layer 620 may be formed by a small amount of oxygen vacancy in the thin film. Compared to the top layer of 630, a very thin conducting path of several nm can be formed. The oxygen vacancy deficient layer 620 may include, for example, TiO ₂ .

The metal oxide layer 630 may be implemented as an oxide semiconductor containing In or an oxide semiconductor containing In and Ga. The oxide semiconductor layer can be dehydrated or dehydrogenated in order to be I-type (intrinsic).

The oxygen vacancy-filling layer 640 is an oxide layer rich in oxygen vacancy positioned on the upper portion of the metal oxide layer 630 and has a relatively wider conductance than the lower layer of the metal oxide layer due to sufficient oxygen vacancy in the film. It is possible to form a conducting path. The oxygen bake-filling layer 640 may include, for example, TaOx- ₅ .

In addition, the second temperature sensor 220 may be implemented as a titanium oxide (TiOx) based temperature sensor having a metal-insulator-transition (MIT) characteristic.

The second temperature sensor 220 may have a temperature coefficient of resistance (TCR), which is a ratio of resistance change according to temperature change, as shown in Equation 1 below.

Here, R represents a reference resistance, dT represents a specific temperature range, dR represents a change in magnitude of resistance over a specific temperature range. .

Accordingly, the second temperature sensor 220 according to the present invention is a resistance change metal oxide based temperature sensor, and has excellent sensitivity (25%) as well as uniform resistance change characteristics in all temperature ranges to be sensed. / 1 ° C resistance change).

For example, when the oxide semiconductor is subjected to heat treatment under an inert gas atmosphere of nitrogen or a rare gas (argon, helium, or the like) or under reduced pressure, the oxide semiconductor layer is oxygen-deficient oxygen vacancies deficient layer 620 by heat treatment. may be, and so on) ^-) is low resistance, that is, N-type forming (N.

In addition, by forming the oxygen vacancy-filling layer 640 in contact with the oxide semiconductor layer and bringing the oxide semiconductor layer into an excess of oxygen, high resistance, that is, I-shape, can be achieved.

On the other hand, dehydration or dehydrogenation is carried out by heating in an inert gas atmosphere of nitrogen or a rare gas (argon, helium, or the like) or at a reduced pressure of 350 ° C. or higher, preferably 400 ° C. or higher, or lower than the strain point of the substrate, It is the process of reducing impurities, such as containing moisture of a semiconductor layer.

Dehydration or dehydrogenation is performed under heat treatment conditions such that two peaks of water and one peak appearing at least about 300 ° C. are not detected even if the oxide semiconductor layer after dehydration or dehydrogenation is measured up to 450 ° C. with TDS. do. Therefore, even if the semiconductor device using the oxide semiconductor layer subjected to dehydration or dehydrogenation is measured up to 450 ° C by TDS, the peak of water appearing at least around 300 ° C is not detected.

Then, when the temperature is lowered from the heating temperature T for performing dehydration or dehydrogenation of the oxide semiconductor layer, water or hydrogen is not contacted with the same furnace subjected to dehydration or dehydrogenation. It is important not to remix. When the semiconductor device is fabricated using an oxide semiconductor layer which has been dehydrated or dehydrogenated to reduce the resistance of the oxide semiconductor layer, i.e., N-type (N ^- type, etc.), and then increase the resistance to form I-type, the switching element The threshold voltage value can be made positive, so that a so-called normally-off semiconductor element can be realized.

The gas atmosphere lowered from the heating temperature T may be switched to a gas atmosphere different from the gas atmosphere heated up to the heating temperature T. FIG. For example, the inside of the furnace is filled with high purity oxygen gas or N ₂ O gas for cooling without contacting the atmosphere in the same furnace where dehydration or dehydrogenation is performed.

After the water content in the film is reduced by heat treatment for dehydration or dehydrogenation, cooling (or cooling) is carried out under an atmosphere containing no water (dew point is -40 ° C or lower, preferably -60 ° C or lower). By using the oxide semiconductor film, the electrical properties of the semiconductor element can be improved, and both mass production and high performance can be provided.

Then, at least a part of the dehydrated or dehydrogenated oxide semiconductor layer is in an excess of oxygen, whereby a high resistance, i.e., an I-type is formed to form a channel formation region. Moreover, as a process which makes a part of dehydration or dehydrogenation of the oxide semiconductor layer into an excess state of oxygen, sputtering film-forming of the oxide insulating film which contact | connects the dehydration or dehydrogenation of the oxide semiconductor layer, or heat processing after oxide-film insulation film formation, Or heat treatment in an atmosphere containing oxygen after oxide insulation film formation, or heating in an inert gas atmosphere after oxide insulation film formation, followed by cooling in oxygen atmosphere, and heating in an inert gas atmosphere after oxide insulation film formation. The cooling is carried out at -40 ° C or lower, preferably -60 ° C or lower).

Further, at least a part (part overlapping with the electrode layer) of the dehydrated or dehydrogenated oxide semiconductor layer can be made to have a high oxygen resistance, that is, I-type. As a result, the channel formation region can be formed. For example, one side electrode layer or the other side electrode layer which consists of metal electrodes, such as Ti, is formed in contact with the dehydrated or dehydrogenated oxide semiconductor layer, and the exposed area | region which does not overlap with one side electrode layer or the other side electrode layer selectively has excess oxygen. The channel formation region can be formed in a state. In the case of selectively oxygen excess, a high resistance one region overlapping with one electrode layer and a high resistance other region overlapping with the other electrode layer are formed, and between the high resistance one region and the high resistance other region. The region becomes a channel forming region. That is, the channel formation region is formed self-aligned between the one electrode layer and the other electrode layer.

This makes it possible to manufacture and provide a semiconductor device having a thin film layer having good electrical characteristics and high reliability.

In addition, by forming the high resistance one region in the oxide semiconductor layer overlapping with the one electrode layer, it is possible to improve the reliability when the driving circuit is formed. Specifically, by forming the high-resistance one side region, it is possible to have a structure in which the conductivity can be changed step by step from the one electrode layer to the high-resistance one side region and the channel formation region. Therefore, when the one electrode layer is connected to the wiring for supplying the high power supply potential VDD and operated, the high resistance one region is buffered and the local high field is not applied even if a high field is applied between the other electrode layer and the one electrode layer. Instead, it can be set as the structure which improved the breakdown voltage of a thin film element.

As described above, according to the present invention, the UHF sensor configured in a mold manner to detect partial discharge is not exposed to air, thereby minimizing detection error due to noise, and also by learning the partial discharge and temperature detected by the switchgear. A 25.8 kV eco-friendly switchgear equipped with a partial discharge diagnosis function and IoT technology for acquiring a normal operation pattern and diagnosing an operating state of a switchgear can be realized.

Those skilled in the art to which the present invention pertains may implement the present invention in other specific forms without changing the technical spirit or essential features, and thus, the embodiments described above are exemplary in all respects and are limited. It must be understood as not. The scope of the present invention is shown by the following claims rather than the detailed description, and all changes or modifications derived from the meaning and scope of the claims and their equivalents should be construed as being included in the scope of the present invention. .

10: enclosure 11: front door
12: rear door 13: load switch
14 instrument transformer current transformer 15 vacuum circuit breaker
16 instrument transformer 17 current transformer
18: mold transformer 20: diagnostic device
100: UHF sensor 111: flange fixing screw
112: flange groove 110: sensor flange
120: sensor support 121: support coupling screw
130 sensor antenna 131 base plate
132: side plate 140: sensor cover
141: cover coupling screw 142: cover groove
143: Cover O-ring 150: Connector
200: temperature sensor 210: first temperature sensor
220: second temperature sensor 230: comparator
240: memory 300: repeater
400: diagnostic unit 401: artificial intelligence
402: microprocessor 403: storage
410: derivator 411: text conversion module
412: information extraction module 413: element derivation module
420: Learning Engine 421: Organization Module
422 configuration module 423 learning module
430: Action 431: Understanding and Scheduling Module
432: Judgment and Prediction Module 433: Recommendation and Action Module
440: DNA Tool 441: Conversion Tool
442: Extraction Tool 443: Combination Tool
DS: Disconnector 510: Sensor
520: temperature transfer unit 530: first electrode
540: second electrode 550: light quantity measuring unit
560: temperature blocking unit 610: first electrode
620: oxygen deprivation layer 630: metal oxide layer
640: full layer of oxygen bacon 650: second electrode

Claims (5)

An enclosure forming a switchboard; And
It is installed inside the enclosure includes a diagnostic device for detecting and diagnosing the partial discharge and temperature of the devices inside the switchgear,
The diagnostic device,
A UHF sensor detecting the partial discharge;
A temperature sensor installed at a measurement site and detecting a temperature;
A repeater for receiving and transmitting signals output from the UHF sensor and the temperature sensor; And
A diagnostic device for diagnosing partial discharge and temperature based on a signal received from the repeater and transmitting a diagnosis result to an external device;
The diagnostic device,
By storing the partial discharge and the temperature input from the repeater and learning by a deep learning method every predetermined period, to obtain and store a constant pattern of the partial discharge and temperature in which the switchgear operates normally, and to the obtained constant pattern On the basis of the diagnosis of the operating state of the switchboard,
By learning the partial discharge and the temperature in a deep learning method every predetermined period, an artificial pattern for acquiring a constant pattern of the partial discharge and the temperature in which the switchgear operates normally, and diagnosing the operation state of the switchgear based on the obtained pattern. Intelligence unit;
A microprocessor for controlling storing the partial discharge and temperature input from the repeater and transmitting the learning and diagnosis results of the artificial intelligence unit to the outside; And
It includes a storage unit for storing the partial discharge and the temperature input from the repeater, or storing a predetermined pattern obtained from the artificial intelligence unit as data, and stores the learning or diagnostic results as data,
The temperature sensor includes a first temperature sensor and a second temperature sensor,
Outputs of the first temperature sensor and the second temperature sensor are respectively connected to a comparator, and the comparator is connected to a memory and the microprocessor, respectively.
The first temperature value sensed by the first temperature sensor and the second temperature value sensed by the second temperature sensor are respectively input to the comparator, and the comparator compares the first temperature value with the second temperature value. If the difference is outside the error range, an error tag is written to a specific address in the memory.
The microprocessor receives a signal regarding data reception and writing from the memory through ports for data transmission and recognizes that there is data reception and writing in the memory.
The ports for data transmission include a first port for recognizing data transmission and a second port for recognizing a write to the memory,
The first port and the second port are coupled to each other,
The coupling uses the output of the first port as a control signal for controlling the enabling and disabling of the pull-up resistance of the second port,
The combined signal of the first port and the second port is used as an interrupt signal for the microprocessor,
When the interrupt signal toggles from low to high and a predetermined time elapses, the microprocessor recognizes that there is a data transfer from the comparator to the memory,
When the interrupt signal is toggled down from high to low and back up from low to high again within a predetermined time period, the microprocessor recognizes the comparator as writing to the memory. 25.8 kV eco-friendly switchgear with discharge diagnostics and IoT technology.
The method of claim 1,
The first temperature sensor,
A sensor unit including an organic light emitting layer including a delayed fluorescent material;
Located in the lower portion of the sensor unit, the temperature transmission unit for transmitting an external temperature to the sensor unit;
A first electrode positioned above the sensor unit;
A second electrode positioned below the sensor part and spaced apart from the temperature transmitting part;
A light amount measurer positioned under the second electrode and measuring the amount of light emitted from the organic light emitting layer; And
Located between the temperature transmission unit and the second electrode, including a temperature blocking unit for blocking the transfer of temperature from the temperature transmission unit to the second electrode,
The sensor unit detects the partial discharge diagnosis function of changing the amount of light emitted from the organic light emitting layer according to the temperature transmitted through the temperature transfer part by changing the transition efficiency of the delayed fluorescent material by an external temperature; 25.8 kV eco-friendly switchgear with IoT technology.
The method of claim 2,
The second temperature sensor,
A first electrode;
An oxygen vacancy deprivation layer positioned on the first electrode;
A metal oxide layer (active layer) disposed on the oxygen bacon deficient layer;
A Sufficient Oxygen Vacancy Layer positioned on the metal oxide layer; And
A second electrode positioned on the oxygen filling layer;
A conduction path is formed between the oxygen vacancy deficient layer, the metal oxide layer, and the oxygen vacancy-filled layer through conducting filaments. 25.8 kV eco-friendly switchgear.
The method of claim 3, wherein
The memory,
25.8 kV eco-friendly switchgear with partial discharge diagnostic function and IoT technology, characterized in that connected to the microprocessor via a plurality of lines for transmitting data transmission and control commands.
The method of claim 4, wherein
The diagnostic device,
25.8 kV eco-friendly switchgear equipped with a partial discharge diagnostic function and IoT technology characterized in that it is configured to accumulate partial discharge detection data to determine the abnormality of the switchgear.

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