KR102077647B1 - Fine wire manufacturing system - Google Patents

Abstract

The present invention relates to a system for manufacturing a fine wire and, more specifically, to a system for manufacturing a fine wire, which is to improve quality of surface polishing on a fine wire by continuously conducting different methods of surface polishing on the fine wire in a single line. Specifically, the system for manufacturing a fine wire is to largely improve surface polishing quality of the fine wire by a synergy effect by fusion of a polishing effect of a direct current and a polishing effect of an alternating current by continuously performing electrolytic polishing using the direct current and electrolytic polishing using the alternating current. Therefore, the system for manufacturing a fine wire can largely improve a yield of a semiconductor product when using Momesh manufactured by the system for manufacturing a fine wire in a semiconductor manufacturing process. Therefore, the system for manufacturing a fine wire can improve reliability and competitiveness in a metal mesh manufacturing field, specifically, in the field of manufacturing a metal net of a molybdenum (Mo) material, a semiconductor field producing a product using the same, and a similar and related field.

Description

Fine wire manufacturing system

The present invention relates to a thin wire manufacturing system, and more particularly, to continuously improve the surface grinding of thin wires by performing different types of surface polishing for thin wires in one line.

In particular, the present invention by performing the electrolytic polishing by the alternating current and the electrolytic polishing by the direct current, through the synergy effect by the fusion of the polishing effect by the alternating current and the direct current polishing effect on the surface polishing of the fine wire The present invention relates to a thin wire manufacturing system that can greatly improve quality.

Metal mesh (mesh) has been used for various purposes such as printing and filters, and products of various materials and specifications have been developed and used according to purposes and uses.

As a technique related to the mesh of the metal material, it can be largely divided into a technique related to an apparatus and a method of manufacturing the mesh and a technique related to fine wires of the metal material constituting the mesh.

For example, as a technology related to an apparatus for manufacturing a mesh, Korean Patent Publication No. 10-1328407, "Wire Mesh Knitting Machine and Wire Mesh Manufacturing Method," which is the following prior art document (hereinafter, referred to as "prior art 1"). ).

As another example, as a technique for thin wire of a metal material, Korean Patent Publication No. 10-1596981, which is the following prior art document, 'Metal ultrafine wire, a method for producing a fine metal wire, and a mesh wire mesh using a fine metal wire' (hereinafter ' Prior art 2 ').

Meanwhile, in the semiconductor manufacturing field, which is a high-tech industry, a mesh of molybdenum (Mo) material (hereinafter, referred to as 'mo mesh') is used.

For example, Molymesh may be used in the deposition process, etching process, removal process, cleaning process, etc. in the semiconductor manufacturing process, and particularly in the case of the deposition process, chemical vapor deposition (CVD) or atomic layer deposition (Atomic Layer Deposition). , ALD) and the like.

The process of manufacturing the mesh of such a metal material may be largely divided into a thin line process, a polishing process, a washing process, a packaging process, and the like.

Among these, the grinding | polishing process which determines the quality of a thin wire is a process of grinding | polishing the surface of a thin wire, and it can be said that it is the most important process among the manufacturing processes of a thin wire.

However, the techniques used in the polishing process so far are generally known techniques, and thus, the fine wires thus far produced have been satisfactory in maintaining general quality.

On the other hand, in the case of the molybdenum described above is a product used in the semiconductor process has a great influence on the yield of the semiconductor process by the quality of the surface.

In particular, in the semiconductor field, as the size of IT devices becomes smaller, the development of low power, high performance chips that process large amounts of data is being developed. Most semiconductor products are ultra-fine, such as a wafer level chip scale package (WLCSP) method. It is manufactured by the process.

This ultrafine process is also greatly affected by the quality of the materials used in the process.

Nevertheless, the polishing process up to now does not improve the surface quality of thin wires, and thus the surface quality of molybdenum meshes produced using such thin wires cannot be improved. This is a major obstacle to improving the yield of the semiconductor process.

In addition, the conventional thin wire process has a problem that damage, breakage, disconnection, etc. in the fine wire occurs in the process of transferring the fine wire processed in each process to the next process in order to perform the processes for grinding the fine wire.

This means that the more the process of transporting the fine wire, the higher the defective rate of the manufacturing process of the entire fine wire and the quality is greatly reduced.

Republic of Korea Patent Publication No. 10-1328407 'wire mesh knitting machine and wire mesh manufacturing method' Republic of Korea Patent Publication No. 10-1596981 'Metal ultrafine wire, manufacturing method of fine metal wire, and mesh gold mesh using metal ultrafine wire'

In order to solve the above problems, in more detail, by continuously treating the surface polishing of different methods for thin wires in one line, to provide a fine wire manufacturing system that can improve the quality of the fine surface polishing There is a purpose.

In particular, the present invention by performing the electrolytic polishing by the alternating current and the electrolytic polishing by the direct current, through the synergy effect by the fusion of the polishing effect by the alternating current and the direct current polishing effect on the surface polishing of the fine wire The present invention relates to a thin wire manufacturing system that can greatly improve quality.

In addition, the present invention by operating the system in an inline method to process the process for the surface grinding of thin wires in one process, the damage, breakage, disconnection, etc. The present invention relates to a thin wire manufacturing system that can prevent the occurrence of oil in advance.

In order to achieve the above object, the thin wire manufacturing system according to the present invention, the AC polishing apparatus for primary electropolishing the surface of the fine wire to be supplied; And a direct current polishing device for performing secondary electropolishing on the surface of the fine wire firstly polished by the alternating current polishing device.

In addition, the AC polishing apparatus, AC reactor formed in the longitudinal direction along the moving direction of the fine wire; An electrolyte supply unit supplying an electrolyte for wire rod processing into the AC reactor; And an AC supply unit configured to apply an AC current to the electrolyte.

In addition, the inside of the AC reactor may be partitioned into a plurality of reaction spaces by a plurality of partitions.

In addition, the alternating current reaction tank, guide grooves through which the thin wires may be formed may be formed on both side surfaces of the longitudinal direction and the partition.

In addition, an electrolyte recovery space may be formed at both side edges of the AC reactor in the longitudinal direction, in which the electrolyte overflowed by the guide groove is stored and recovered.

In addition, the direct current polishing device, the electrolyte recovery tank for recovering the electrolyte overflowed to form an appearance; And a direct current reaction tank configured in the electrolyte recovery tank and supplied with an electrolyte solution and a part of the electrolyte overflows into the electrolyte recovery tank.

In addition, the DC reactor, the guide groove is formed in the longitudinal direction through which the fine wire, a portion of the electrolyte supplied to the DC reactor by the guide groove may overflow to the electrolyte recovery tank.

In addition, the AC polishing apparatus and the DC polishing apparatus, which is composed of a dual type including a first polishing line and a second polishing line, the thin wire measurement for measuring the appearance of the fine wire surface polished in the AC polishing apparatus and the DC polishing apparatus The method may further include a sensor, and based on the surface information of the thin wire measured by the thin wire measuring sensor, it is possible to determine whether to re-polishing in the second polishing line with respect to the fine wire polished by the first polishing line.

In addition, a thin wire measuring sensor for measuring the appearance of the fine wire surface polished in the AC polishing device and the DC polishing device; And based on the surface information of the thin wire measured by the thin wire measuring sensor, the control device for controlling the intensity of the current supplied to the AC polishing device and the DC polishing device; may further include.

In addition, a thin wire bobbin for supplying the thin wire; Ultrasonic cleaning apparatus for washing the surface polished fine wire in the AC polishing device and the DC polishing device using ultrasonic waves; A drying device for drying the fine wire washed in the ultrasonic cleaning device; And a winding bobbin for winding the thin wire dried in the drying device.

By the above solution, the present invention has the advantage of improving the quality of the surface polishing of the fine wire by continuously treating the surface polishing of the different way for the fine wire in one line.

Accordingly, by preventing the damage, breakage, disconnection, etc. generated during the transport of the intermediate product (fine wire) in the manufacturing process of the thin wire, there is an advantage that can greatly improve the productivity of the product, as well as significantly lower the defective rate.

In particular, the present invention by performing the electrolytic polishing by the alternating current and the electrolytic polishing by the direct current, through the synergy effect by the fusion of the polishing effect by the alternating current and the direct current polishing effect on the surface polishing of the fine wire There is an advantage that can greatly improve the quality.

Thus, when the molybdenum mesh prepared by the present invention is used in the semiconductor manufacturing process, the yield of the semiconductor product may also be greatly improved.

Therefore, it is possible to improve the reliability and competitiveness in the field of mesh fabrication of metal materials, in particular, the field of metal mesh fabrication of molybdenum (Mo) material and the semiconductor field for producing products using the same, as well as related fields. .

1 is a block diagram showing an embodiment of a thin wire manufacturing system according to the present invention.
2 is a plan view of FIG. 1.
3 is a view conceptually illustrating a surface polishing process of thin wires according to the present invention.
4 is a block diagram showing a specific embodiment of the AC polishing apparatus shown in FIG.
5 is a state diagram used in FIG.
FIG. 6 is a diagram illustrating a specific embodiment of the DC polishing apparatus shown in FIG. 1.

An example of the thin wire manufacturing system according to the present invention can be applied in various ways, and hereinafter, the most preferred embodiment will be described with reference to the accompanying drawings.

1 is a block diagram showing an embodiment of a thin wire manufacturing system according to the present invention, Figure 2 is a plan view of Figure 1, Figure 3 is a view conceptually illustrating the surface polishing process of the thin wire according to the present invention.

Referring to FIG. 1, the thin wire manufacturing system A includes a thin wire bobbin 100, an AC polishing device 200, and a DC polishing device 300.

The thin wire bobbin 100 is a thin wire 10 to be polished in a roll shape, and may be installed to be rotatable on one side.

The AC polishing apparatus 200 is for primarily electropolishing the surface of the thin wire 10 supplied from the thin wire bobbin 100 using alternating current F (a), as shown in FIG. 3. A relatively overhanging portion of the surface of the polishing will be polished.

In FIG. 3, IS (Ideal Surface) is an imaginary line of a surface representing an ideal state, and RS is an exaggerated view of the surface state of actual thin lines.

The DC polishing apparatus 300 is for performing secondary electropolishing on the surface of the fine wire 11 primarily processed by the AC polishing apparatus 200 using direct current (F (d)), as shown in FIG. 3. The surface of the primary processed fine wire 11 is polished more smoothly.

Therefore, according to the present invention, the primary polishing is performed by the alternating current polishing apparatus 200 and the secondary polishing by the direct current polishing apparatus 300 can produce fine wire of high quality.

For reference, in the present invention, the thin wire before electrolytic polishing is denoted by '10', the primary electropolished fine wire is denoted by '11', and the secondary electropolished fine wire is denoted by '12'.

In addition, in the present invention, the AC polishing apparatus 200 and the DC polishing apparatus 300 may be configured by changing their order as necessary.

However, when the fine wire of the desired diameter is manufactured by adjusting the thickness of the wire, the surface of the surface is irregular and very rough, so that the relatively rough part is polished first through the AC polishing device 200 as in the present invention. If the surface of the fine wire is polished to a certain level, it is preferable to use a method of polishing as a whole using the DC polishing device 300.

In addition, the thin wire processing system (A) of the present invention, the ultrasonic cleaning device 400, the ultrasonic cleaning device 400 for wet washing the second surface polished fine wire 12 in the DC polishing device 300 using ultrasonic waves. The drying apparatus 500 for drying the fine wire washed in), may further include a winding bobbin 600 winding the thin wire 12 dried in the drying apparatus 500, the winding bobbin 600 is a subsequent process It can be transferred to the in-mesh manufacturing process.

In addition, the thin wire processing system (A) of the present invention further includes a control device 700 for controlling the strength of the alternating current and direct current supplied to the alternating current polishing device 200 and the direct current polishing device 300, and operating the respective devices. can do.

For example, as shown in FIG. 2, in the AC polishing apparatus 200 and the DC polishing apparatus 300, a thin wire measuring sensor 710 may be configured to measure the external appearance of the fine wire 12 that has been surface-polished over two times. have.

Thus, the control device 700 may control the strength of the current supplied to the AC polishing device 200 and the DC polishing device 300 based on the surface information of the thin wire measured by the thin wire measuring sensor 710.

In addition, the AC polishing apparatus 200 and the DC polishing apparatus 300 may be configured as a dual type including a first polishing line L1 and a second polishing line L2 as shown in FIG. 2.

The operator checks the surface information of the thin wire 12 measured by the thin wire measuring sensor 710 and, based on the confirmed surface information, with respect to the fine wire 12 whose surface is polished by the first polishing line L1, If necessary, it can be repolished in the second polishing line L2.

The regrinding process of the thin wire 12 using the second polishing line L2 may be performed manually by an operator, but is not limited thereto, and may be automatically controlled by the controller 700 described above. .

At this time, the process of moving the take-up bobbin 600 of the first polishing line (L1) to the position of the first bobbin 100 of the second polishing line (L2), can be configured to enable automatic control by a robot or the like, Since the configuration can be variously applied according to the needs of those skilled in the art, of course, it is not limited to the specific one.

Figure 4 is a block diagram showing a specific embodiment of the AC polishing apparatus shown in Figure 1, Figure 5 is a state diagram used in FIG.

Referring to FIG. 4, the AC polishing apparatus 200 may include an AC reactor 210, an electrolyte supply unit (not shown), and an AC supply unit 230.

As shown in FIG. 5, the AC reactor 210 is formed in the longitudinal direction along a moving direction (the upper left to the lower right in FIG. 4) in which the fine wire 10 is introduced and the primary electropolished fine wire 11 is discharged. The interior thereof may be partitioned into a plurality of reaction spaces 201 by a plurality of partitions 211.

As shown in FIG. 5, the thin wire 10 may move while penetrating through the guide grooves 210a and 211a respectively formed in both side surfaces and the partition 211 in the longitudinal direction of the AC reactor 210.

The electrolyte supply unit supplies an electrolyte for wire rod processing to the inside (reaction space) of the AC reactor 210, and supplies an electrolyte solution from an electrolyte storage tank by using a pump or the like. Or may be connected laterally.

Since the specific configuration of the electrolyte supply unit may be variously changed according to the needs of those skilled in the art, it is obvious that the present invention is not limited thereto.

Meanwhile, as described above, the partition 211 is formed with a guide groove 211a for moving the thin wire 10, and the thin wire 10 passing therethrough is supplied to the reaction space 201 as shown in FIG. 5. Since it is moved in the state immersed in the electrolyte, a part of the supplied electrolyte may overflow through the guide groove 211a, which may cause the outflow to the outside.

Accordingly, the present invention forms the electrolyte recovery space 202 at both edges in the longitudinal direction of the AC reactor 210, so that the electrolyte overflowed by the guide groove 211a is stored, so that the electrolyte flows out. Can be prevented.

The electrolyte flowing into the electrolyte recovery space 202 may be recovered to an external storage tank through an outlet pipe (not shown) that is spatially connected to the electrolyte recovery space 202.

AC supply unit 230 is for applying an AC current to the electrolyte supplied to the reaction space 201 of the AC reactor 210, as shown in Figure 4 of the terminal along the lengthwise side edges of the AC reaction diagram 210 It may be configured in the form, the strength of the AC supplied by the AC control unit 720 configured in the control device 700 can be controlled.

In this case, the AC supply unit 230 may further include an AC branch terminal 231 at least partially submerged in the electrolyte to supply the AC supplied from the AC controller 720 to the electrolyte.

FIG. 6 is a diagram illustrating a specific embodiment of the DC polishing apparatus shown in FIG. 1.

Referring to FIG. 6, the DC polishing apparatus 300 may include an electrolyte recovery tank 310 and a DC reaction tank 320.

The electrolyte collection tank 310 forms an outer appearance of the DC polishing apparatus 300 and is for recovering the electrolyte overflowed from the DC reactor 320.

The DC reactor 320 is configured inside the electrolyte recovery tank 310, and the electrolyte may be supplied therein.

In addition, the DC reactor 320 may be formed with a guide groove (unsigned) in the longitudinal direction through which the fine wire 11 first electropolished in the AC polishing apparatus 200 passes.

Thus, a part of the electrolyte supplied to the DC reactor 320 may overflow to the electrolyte recovery tank 310 by the guide groove formed in the DC reactor 320.

In this case, the guide groove may be formed in the electrolyte recovery tank 310 to be parallel to the guide groove formed in the DC reactor 320.

Structural features of the AC polishing apparatus 200 and the DC polishing apparatus 300 of the present invention as described above, in order to be able to electro-polishing the fine wire 10 in an inline system that can process a plurality of processes at once It is an optimized structure, and through this structure, the fine wire 10 to be electropolished can be continuously moved while simultaneously electropolishing.

The thin wire manufacturing system by this invention was demonstrated above. Such a technical configuration of the present invention will be understood by those skilled in the art that the present invention may be implemented in other specific forms without changing the technical spirit or essential features of the present invention.

Therefore, the above-described embodiments are to be understood in all respects as illustrative and not restrictive.

A: Thin wire manufacturing system
L1: Warp processing line L2: Weft processing line
100: wire rod bobbin
200: AC polishing device 210: processing part
220: electrolyte supply unit 230: AC supply unit
300: DC polishing apparatus 310: first polishing unit
311: negative electrode terminal 312: positive electrode terminal
320; 2nd grinding part
400: ultrasonic cleaning device 500: drying device
600: winding bobbin
700: controller 710: pre-measuring sensor
720: thin wire measuring sensor 730: AC control unit

Claims (10)

An alternating current polishing device that first performs electrolytic polishing to remove relatively excessively protruding portions from the surface of the fine wire to be supplied, and first polishes the relatively rough portions;
A DC electropolishing apparatus for secondary electropolishing to smoothly process the surface of the primary fine wire polished by the alternating current polishing device to polish the convex portions of the polished surface to a predetermined level as a whole;
Thin wire measuring sensor for measuring the appearance of the fine wire surface polished in the AC polishing device and the DC polishing device; And
And a control device for controlling the intensity of the current supplied to the AC polishing device and the DC polishing device, based on the surface information of the thin wire measured by the thin wire measuring sensor.
The method of claim 1,
The AC polishing device,
An AC reactor formed in a longitudinal direction along the moving direction of the thin wire;
An electrolyte supply unit supplying an electrolyte for wire rod processing into the AC reactor; And
Thin wire manufacturing system comprising a; AC supply unit for applying an alternating current to the electrolyte.
The method of claim 2,
The inside of the AC reactor is
A thin wire manufacturing system, characterized by being partitioned into a plurality of reaction spaces by a plurality of partitions.
The method of claim 3, wherein
The AC reactor is
A thin wire manufacturing system, characterized in that guide grooves through which the thin wire penetrates are formed on both side surfaces of the longitudinal direction and the partition.
The method of claim 4, wherein
On both side edges of the AC reactor in the longitudinal direction,
The thin wire manufacturing system, characterized in that the electrolyte recovery space in which the electrolyte overflowed by the guide groove is stored and recovered.
The method of claim 1,
The DC polishing device,
Electrolyte recovery tank which collect | recovers the electrolyte solution which overflowed and made | formed; And
And a direct current reactor configured to be provided inside the electrolyte recovery tank and supplying an electrolyte solution therein and part of the electrolyte overflows to the electrolyte recovery tank.
The method of claim 6,
The direct current reactor,
Guide grooves are formed in the longitudinal direction through which the fine wires pass,
Part of the electrolyte supplied to the direct current reaction tank by the guide grooves, characterized in that overflowing to the electrolyte recovery tank.
The method according to any one of claims 1 to 7,
The AC polishing device and the DC polishing device,
Composed of a dual type including a first polishing line and a second polishing line,
Further comprising a thin wire measuring sensor for measuring the appearance of the fine wire surface polished in the AC polishing device and the DC polishing device,
Based on the surface information of the thin wire measured by the thin wire measuring sensor, the fine wire manufacturing system, characterized in that for re-grinding in the second polishing line with respect to the fine wire polished by the first polishing line.
The method of claim 1,
A thin wire bobbin for supplying the thin wire;
Ultrasonic cleaning apparatus for washing the surface polished fine wire in the AC polishing device and the DC polishing device using ultrasonic waves;
A drying device for drying the fine wire washed in the ultrasonic cleaning device; And
Thin-wire manufacturing system further comprises; winding bobbin wound around the thin wire dried in the drying apparatus. delete

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