KR102071498B1 - Method of fabricating semiconductor device and apparatus of fabricating the same - Google Patents

Abstract

The present invention relates to a method and apparatus for manufacturing a semiconductor device capable of improving uniformity, comprising: a first step of forming a first thin film pattern on a substrate; A second step of measuring CD uniformity of the first thin film pattern; As a preliminary step for forming a second thin film for compensating the CD uniformity of the first thin film pattern, the substrate support is moved up and down by receiving information reflecting the CD uniformity of the first thin film pattern to increase the distance between the showerhead and the substrate. Third step of adjusting; And a fourth step of forming the second thin film on the first thin film pattern.

Description

Method of fabricating semiconductor device and apparatus of fabricating the same

The present invention relates to a semiconductor device manufacturing method and apparatus, and more particularly, to a semiconductor device manufacturing method and apparatus capable of improving the uniformity.

As semiconductor devices are highly integrated, a pattern having a fine line width is required. However, it is very difficult to form a micro pattern having a predetermined size or less due to the limitations of currently developed and commercially available exposure equipment. Accordingly, a DPT (Double Patterning Technology) process technology has been proposed to realize a pattern having a fine line width while using a commercially available exposure equipment as it is. On the other hand, the large diameter of the wafer is required to improve the productivity of the semiconductor device, the uniformity of the process over the entire surface of the wafer has emerged as an important issue. Recently, uniformity of patterning has emerged as an important issue in implementing DPT processes on large diameter wafers.

The present invention has been made to solve various problems including the above problems, and an object thereof is to provide a method and apparatus for manufacturing a semiconductor device which can improve uniformity. However, these problems are exemplary, and the scope of the present invention is not limited thereby.

Provided is a method of manufacturing a semiconductor device according to an aspect of the present invention for solving the above problems. The method of manufacturing the semiconductor device may include a first step of forming a first thin film pattern on a substrate; A second step of measuring CD uniformity of the first thin film pattern; As a preliminary step for forming a second thin film for compensating the CD uniformity of the first thin film pattern, the substrate support is moved up and down by receiving information on the CD uniformity of the first thin film pattern to increase the gap between the showerhead and the substrate. Third step of adjusting; And a fourth step of forming the second thin film on the first thin film pattern.

The method of manufacturing the semiconductor device may include forming a second thin film pattern having a spacer shape on a side of the first thin film pattern by performing a front surface etching process (eg, an etch back process) on the second thin film. 5 steps; And a sixth step of removing the first thin film pattern. The first step, the fourth step, the fifth step and the sixth step are part of a double patterning technology.

In the method of manufacturing the semiconductor device, the first thin film pattern includes a plurality of line and space patterns, and the information reflecting the CD uniformity of the first thin film pattern includes the plurality of line and space patterns. If the line average width at the substrate center includes information that is smaller than the line average width at the substrate edge, the third step further comprises: the first thickness greater than the thickness at the substrate edge; 2 As a preliminary step for forming a thin film, the smaller the line average width at the center of the substrate constituting the first thin film pattern is than the line average width at the substrate edge, the smaller the distance between the substrate and the showerhead. Setting may be included. Here, as the distance between the substrate and the showerhead is set smaller, the thickness at the center of the substrate in the second thin film becomes larger than the thickness at the substrate edge.

In the method of manufacturing the semiconductor device, the first thin film pattern includes a plurality of line and space patterns, and the information reflecting the CD uniformity of the first thin film pattern includes the plurality of line and space patterns. If the line average width at the substrate center includes information that is greater than the line average width at the substrate edge, the third step comprises: the second at a thickness less than the thickness at the substrate edge; As a preliminary step for forming a thin film, as the line average width at the center of the substrate constituting the first thin film pattern is larger than the line average width at the substrate edge, the distance between the substrate and the showerhead is set larger. It may include a step. Here, as the distance between the substrate and the showerhead is set larger, the thickness at the center of the substrate in the second thin film is smaller than the thickness at the substrate edge.

There is provided a semiconductor device manufacturing apparatus according to another aspect of the present invention for solving the above problems. The apparatus for manufacturing a semiconductor device is a device for manufacturing a semiconductor device for forming a second thin film for compensating CD uniformity of the first thin film pattern on a substrate on which a first thin film pattern is already formed. A deposition chamber having a support and a shower head supplied with a source gas and a reaction gas; And a control unit configured to adjust the distance between the shower head and the substrate by moving the substrate support up and down by receiving information about CD uniformity of the first thin film pattern. It is provided.

According to some embodiments of the present invention made as described above, it is possible to provide a method and apparatus for manufacturing a semiconductor device capable of improving CD uniformity. Of course, the scope of the present invention is not limited by these effects.

1 is a flow chart illustrating a method of manufacturing a semiconductor device in accordance with some embodiments of the present invention.
2 is a cross-sectional view illustrating a method of manufacturing a semiconductor device by a method according to an embodiment of the present invention.
3 is a cross-sectional view illustrating a method of manufacturing a semiconductor device by a method according to another embodiment of the present invention.
4 schematically illustrates a configuration of an apparatus for manufacturing a semiconductor device for performing a method according to some embodiments of the present inventive concept.

Hereinafter, various embodiments of the present invention will be described with reference to the accompanying drawings.

Throughout the specification, when referring to one component, such as a film, pattern, region, or substrate, being located "on" another component, said one component directly "contacts" said other component, or It may be interpreted that there may be other components intervening therebetween. On the other hand, when referring to one component located directly on another component, it is interpreted that there are no other components interposed therebetween.

Embodiments of the present invention will now be described with reference to the drawings, which schematically illustrate ideal embodiments of the present invention. In the drawings, for example, variations in the shape shown may be expected, depending on manufacturing techniques and / or tolerances. Accordingly, embodiments of the inventive concept should not be construed as limited to the specific shapes of the regions shown herein, but should include, for example, changes in shape resulting from manufacture. In addition, the thickness or size of each layer in the drawings may be exaggerated for convenience and clarity of description. Like numbers refer to like elements.

In some embodiments of the present invention, the method of forming the thin film may be implemented by chemical vapor deposition (CVD) or atomic layer deposition (ALD). In particular, the atomic layer deposition method continuously supplies the source gas and the reaction gas as spaced apart from the time division method in which deposition is realized by discontinuously supplying the source gas and the reaction gas in the reactor in which the substrate is disposed over time. Subsequently moving substrates in the system may include a spatial division scheme in which deposition is implemented.

1 is a flow chart illustrating a method of manufacturing a semiconductor device in accordance with some embodiments of the present invention.

Referring to FIG. 1, a method of manufacturing a semiconductor device in accordance with some embodiments of the present invention may include forming a first thin film pattern on a substrate (S100); A second step (S200) of measuring CD uniform dimension of the first thin film pattern; As a preliminary step for forming a second thin film for compensating the CD uniformity of the first thin film pattern, the substrate support is moved up and down by receiving information on the CD uniformity of the first thin film pattern to increase the gap between the showerhead and the substrate. Adjusting the third step (S300); And a fourth step (S400) of forming the second thin film on the first thin film pattern.

Detailed description thereof will be described later with reference to FIG. 2.

2 is a cross-sectional view sequentially illustrating a DPT process for manufacturing a semiconductor device by a method according to an embodiment of the present invention.

Referring to FIG. 2A, the target film 20 is formed on the substrate 10. The substrate 10 may include, for example, a semiconductor substrate, a conductor substrate, an insulator substrate, or the like. The first thin film 30 is formed on the target film 20.

Referring to FIG. 2B, the first thin film 30 is patterned to form the first thin film pattern 30a, and the CD uniformity of the first thin film pattern 30a is measured. An ideal CD uniformity (100%) is realized when the dimensions and / or pitch of the repeated subpatterns that make up the first thin film pattern 30a are constant across the entire surface from the wafer center to the edge. However, in the actual process, the CD uniformity of the first thin film pattern 30a is less than 100% due to the thickness uniformity of the first thin film 30 or the uniformity of the patterning process of the first thin film 30.

The first thin film pattern 30a may include a plurality of line and space patterns. In this case, the information measuring CD uniformity of the first thin film pattern 30a may include, for example, a line average width at the center of the substrate in the plurality of line and space patterns. Information smaller than the line average width at the edge). The line average width can be understood as the average value of the bar dimensions (bar CD) of the line and space pattern.

For example, the line average width B1 at the center of the substrate may be relatively small among the line patterns constituting the first thin film pattern 30a and the line average width B3 at the edge of the substrate may be relatively large (B3> B1). . In this case, the width of the space pattern constituting the first thin film pattern 30a may be larger at the center of the substrate than at the edge of the substrate (S1> S2).

Referring to FIG. 2C, a second thin film 40 is formed on the first thin film pattern 30a. The second thin film 40 may have a thickness distribution that compensates for the CD uniformity of the first thin film pattern 30a. For example, the thickness of the second thin film 40 may be greater than that of the substrate center (Td> T2). As a result, a relatively thick second thin film 40 is formed in a region where the spacing is relatively large among the space patterns constituting the first thin film pattern 30a, and the spacing among the space patterns constituting the first thin film pattern 30a is formed. In this relatively narrow region, the relatively thin second thin film 40 is formed, so that the space C1 can be relatively uniform over the entire surface of the substrate.

Referring to FIG. 2D, the second thin film pattern 40a may be formed on the side of the first thin film pattern 30a by performing a front surface etching process on the second thin film 40. The second thin film pattern 40a may have a spacer shape.

Referring to FIG. 2E, the first thin film pattern 30a is selectively removed. Accordingly, only the second thin film pattern 40a on the target layer 20 may serve as a mask in a subsequent etching process.

Referring to FIG. 2F, the target film 20 is etched using the second thin film pattern 40a as a hard mask to form the target film pattern 20a.

Referring to FIG. 2G, by removing the second thin film pattern 40a, the target film pattern 20a uniformly distributed on the substrate 10 may be implemented. The CD uniformity of the target film pattern 20a may be better than the CD uniformity of the first thin film pattern 30a. For example, among the line patterns constituting the target film pattern 20a, the line average width B4 at the center of the substrate is relatively large and the line average width B5 at the substrate edge is relatively small, but is spread over the entire surface of the substrate. The uniformity deviation of the target film pattern 20a may be smaller than the uniformity deviation of the first thin film pattern 30a. This effect is realized by adjusting the thickness uniformity of the second thin film 40 to compensate for the uniformity of the first thin film pattern 30a.

3 is a cross-sectional view sequentially illustrating a DPT process for manufacturing a semiconductor device by a method according to another embodiment of the present invention. Hereinafter, a description will be given of parts which are different from those described with reference to FIG. 2.

Referring to FIG. 3A, the target film 20 is formed on the substrate 10. Referring to FIG. 3B, the first thin film 30 is patterned to form the first thin film pattern 30a, and the CD uniformity of the first thin film pattern 30a is measured.

The first thin film pattern 30a may include a plurality of line and space patterns. In this case, the information measuring CD uniformity of the first thin film pattern 30a may include, for example, a line average width at the center of the substrate in the plurality of line and space patterns. Information larger than the line average width at the edge). The line average width can be understood as the average value of the bar dimensions (bar CD) of the line and space pattern.

For example, the line average width B1 at the center of the substrate may be relatively large and the line average width B3 at the edge of the substrate may be relatively small among the line patterns constituting the first thin film pattern 30a (B3 <B1). . In this case, the width of the space pattern constituting the first thin film pattern 30a may be smaller at the center of the substrate than at the edge of the substrate (S1 <S2).

Referring to FIG. 3C, the second thin film 40 is formed on the first thin film pattern 30a. The second thin film 40 may have a thickness distribution that compensates for the CD uniformity of the first thin film pattern 30a. For example, the thickness of the second thin film 40 may have a substrate center smaller than the substrate edge (T1 <T2). As a result, a relatively thick second thin film 40 is formed in a region where the spacing is relatively large among the space patterns constituting the first thin film pattern 30a, and the spacing among the space patterns constituting the first thin film pattern 30a. The relatively thin second thin film 40 is formed in the relatively narrow region, so that the space C2 may be relatively uniform over the entire surface of the substrate.

Referring to FIG. 3D, the second thin film pattern 40a may be formed on the side of the first thin film pattern 30a by performing a front surface etching process on the second thin film 40. The second thin film pattern 40a may have a spacer shape.

Referring to FIG. 3E, the first thin film pattern 30a is selectively removed. Accordingly, only the second thin film pattern 40a on the target layer 20 may serve as a mask in a subsequent etching process. Referring to FIG. 3F, the target layer 20 is etched using the second thin film pattern 40a as a hard mask to form the target layer pattern 20a.

Referring to FIG. 3G, by removing the second thin film pattern 40a, the target film pattern 20a uniformly distributed on the substrate 10 may be implemented. The CD uniformity of the target film pattern 20a may be better than the CD uniformity of the first thin film pattern 30a. For example, the line average width B4 at the center of the substrate is relatively small and the line average width B5 at the substrate edge is relatively large among the line patterns constituting the target film pattern 20a, The uniformity deviation of the target film pattern 20a may be smaller than the uniformity deviation of the first thin film pattern 30a. This effect is realized by adjusting the thickness uniformity of the second thin film 40 to compensate for the uniformity of the first thin film pattern 30a.

On the other hand, as a method of adjusting the thickness uniformity of the second thin film 40 in order to compensate for the uniformity of the first thin film pattern 30a, the technical idea of the present invention, as a previous step for forming the second thin film 40 In response to the information on the CD uniformity of the first thin film pattern 30a, the step of adjusting the distance between the showerhead and the substrate by moving the substrate support up and down is introduced. This will be described with reference to FIG. 4, which schematically illustrates a configuration of an apparatus for manufacturing a semiconductor device for performing a method according to some embodiments of the present disclosure.

The apparatus 100 for manufacturing a semiconductor device according to another exemplary embodiment of the present invention is a thin film forming apparatus. For example, the thin film forming apparatus 100 may include a deposition chamber 140 and a controller 180.

The deposition chamber 140 may include a substrate support 160 and a showerhead 150. The substrate support 160 may have a height ΔH varying vertically in the deposition chamber 140. The substrate 10 on which the thin film structure 60 is formed may be disposed on the substrate support 160. The thin film structure 60 may include the target layer 20 and the first thin film pattern 30a illustrated in FIG. 2B or 3B. The shower head 150 may supply a source gas and a reaction gas to the deposition chamber 140. The controller 180 receives the information on the CD uniformity of the first thin film pattern 30a and feeds back the substrate support 160 to control the thickness uniformity of the second thin film 40 to be formed on the first thin film pattern 30a. ) And the showerhead 150 may be set.

Looking at the semiconductor device manufacturing apparatus 100 in detail, the substrate support 160 may be formed in the lower portion of the deposition chamber 140. The substrate 10 on which the first thin film pattern 30a is already formed may be disposed on the substrate support 160. A shower head 150 may be formed on the deposition chamber 140 to supply a source gas and a reaction gas capable of forming the second thin film 40.

The source gas may be appropriately selected depending on the type of thin film to be formed. For example, when the thin film to be formed is a silicon oxide film, the source gas is SiH ₄ , SiCl ₄ , Si ₂ Cl ₆ , Si (NO ₂ ) ₄ , Si (N ₂ O ₂ ) ₂ , SiF ₄ , SiF ₆ Or Si (CNO) ₄ . Other source gases include Si and H mixtures, Si and N mixtures, Si and F mixtures, Si and O mixtures, and Si, N and O mixtures. Of course, the above-described type of thin film and source gas are exemplary, and the technical spirit of the present invention is not limited to the type of exemplary material.

In addition, the reaction gas may be appropriately selected depending on the type of thin film to be formed. For example, when the thin film to be formed is a silicon oxide film, the reaction gas may include O ₂ . Of course, the type of the thin film and the reaction gas described above are exemplary, and the technical spirit of the present invention is not limited to the exemplary material.

In addition, the driver 170 may be included in the center of the substrate support 160 so that the substrate support 160 moves upward and downward in the deposition chamber 140. Although the driving unit 170 is illustrated as being formed in the center of the substrate support 160, the position thereof may be changed to adjust the size of the substrate 10 and the thickness uniformity of the thin film to be deposited. In addition, the driving unit 170 may be designed to rotate to adjust the thickness uniformity of the thin film to be deposited. In addition, the substrate support 160 may further include a heater.

Meanwhile, the apparatus 100 for manufacturing a semiconductor device may further include a controller 180 that is connected to the driving unit 170 to control a distance between the substrate support 160 and the showerhead 150. The controller 180 forms a second support film 40 that compensates for the CD uniformity of the first thin film pattern 30a and the shower head and the substrate support 160 corresponding to the CD uniformity of the first thin film pattern 30a. It may include a database storing the predetermined interval information between the 150.

2 and 4 together, in the first thin film pattern 30a composed of a plurality of line and space patterns, the line average width B1 at the center of the substrate is the line average width at the substrate edge ( Smaller than B3), by setting the distance between the substrate 10 and the showerhead 150 to be smaller than the reference interval, the thickness T1 at the center of the substrate is greater than the thickness T2 at the substrate edge. The thin film 40 may be formed. Here, the reference interval refers to the distance between the shower head 150 and the substrate 10 that can form a second thin film having a uniform thickness from the center to the edge of the substrate. On the other hand, in the first thin film pattern 30a composed of a plurality of line and space patterns, as the line average width at the center of the substrate is smaller than the line average width at the substrate edge, the substrate 10 and the showerhead The interval between the 150 can be set smaller.

Referring to FIGS. 3 and 4 together, in the first thin film pattern 30a composed of a plurality of line and space patterns, the line average width B1 at the center of the substrate is the line average width at the substrate edge ( When larger than B3), by setting the distance between the substrate 10 and the showerhead 150 to be larger than the reference interval, the second thickness T1 at the center of the substrate is smaller than the thickness T2 at the substrate edge. The thin film 40 may be formed. Here, the reference interval refers to the distance between the shower head 150 and the substrate 10 that can form a second thin film having a uniform thickness from the center to the edge of the substrate. Meanwhile, in the first thin film pattern 30a composed of a plurality of line and space patterns, as the line average width at the center of the substrate is larger than the line average width at the substrate edge, the substrate 10 and the showerhead ( 150 can be set larger.

Although the present invention has been described with reference to the embodiments shown in the drawings, these are merely exemplary, and those skilled in the art will understand that various modifications and equivalent other embodiments are possible. Therefore, the true technical protection scope of the present invention will be defined by the technical spirit of the appended claims.

10: substrate
30a: first thin film pattern
40: second thin film
140: deposition chamber
150: shower head
160: substrate support
170: drive unit
180: control unit

Claims (7)

Forming a first thin film pattern on the substrate;
A second step of measuring CD uniformity of the first thin film pattern;
As a preliminary step for forming a second thin film for compensating the CD uniformity of the first thin film pattern, the substrate support is moved up and down by receiving information reflecting the CD uniformity of the first thin film pattern to increase the distance between the showerhead and the substrate. Third step of adjusting;
A fourth step of forming the second thin film on the first thin film pattern;
A fifth step of forming a second thin film pattern having a spacer shape on the side of the first thin film pattern by performing an entire surface etching process on the second thin film; And
A sixth step of removing the first thin film pattern; Including;
The first thin film pattern includes a plurality of line and space patterns, and the information reflecting the CD uniformity of the first thin film pattern has a line average width at the center of the substrate in the plurality of line and space patterns. If including information that is less than the line average width at the substrate edge, the third step is a previous step for forming the second thin film whose thickness at the center of the substrate is greater than the thickness at the substrate edge; Setting the distance between the substrate and the showerhead to be smaller as the line average width at the center of the substrate constituting the first thin film pattern is smaller than the line average width at the substrate edge,
The first thin film pattern includes a plurality of line and space patterns, and the information reflecting the CD uniformity of the first thin film pattern has a line average width at the center of the substrate in the plurality of line and space patterns. If including information that is greater than the line average width at the substrate edge, the third step is a previous step for forming the second thin film having a thickness at the center of the substrate less than the thickness at the substrate edge. And setting a larger distance between the substrate and the showerhead as the line average width at the center of the substrate constituting the first thin film pattern is larger than the line average width at the substrate edge.
Wherein the first to sixth steps are part of a double patterning technology,
Method of manufacturing a semiconductor device. delete delete delete A manufacturing apparatus for implementing a semiconductor device by a double patterning technology of forming a second thin film on a substrate on which a first thin film pattern is already formed to compensate for CD uniformity of the first thin film pattern.
A deposition chamber having a substrate support, the height of which may be varied up and down, and a shower head supplied with a source gas and a reaction gas; And
A control unit which receives the information reflecting the CD uniformity of the first thin film pattern and adjusts the distance between the shower head and the substrate by moving the substrate support up and down; And
The first thin film pattern includes a plurality of line and space patterns, and the information reflecting the CD uniformity of the first thin film pattern has a line average width at the center of the substrate in the plurality of line and space patterns. And including information that is less than the line average width at the substrate edge, the controller controls the first thin film to form the second thin film having a thickness at the center of the substrate greater than the thickness at the substrate edge. As the line average width at the center of the substrate constituting the thin film pattern is smaller than the line average width at the substrate edge, the distance between the substrate and the showerhead is set smaller,
The first thin film pattern includes a plurality of line and space patterns, and the information reflecting the CD uniformity of the first thin film pattern has a line average width at the center of the substrate in the plurality of line and space patterns. And including information that is greater than the line average width at the substrate edge, the controller is configured to form the second thin film so that the thickness at the center of the substrate is smaller than the thickness at the substrate edge. The larger the average line width at the center of the substrate constituting the pattern is than the average line width at the edge of the substrate, the larger the distance between the substrate and the showerhead,
Device for manufacturing a semiconductor device. delete delete

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