KR102071143B1 - Apparatus including pn junction structure layer for enhancement on beam steering resolution and method manufacturing the same - Google Patents

Abstract

Disclosed are an apparatus having a PN junction structure layer for improving beam adjusting resolution and a manufacturing method thereof. According to one embodiment of the present invention, the apparatus comprises: a grating coupler emitting light incident from a waveguide; a reflector reflecting light emitted from the grating coupler to the bottom of the grating coupler; and an adjusting layer positioned between the grating coupler and the reflector and adjusting a phase of light emitted to the bottom of the grating coupler.

Description

A device having a PN junction structure layer for improving beam steering resolution, and a method of manufacturing the same.

The embodiments below relate to a device having a PN junction structure layer and a method of manufacturing the same for improving beam steering resolution.

Recently, methods and techniques for emitting light in free space, such as light detection and ranging (LIDAR), light fidelity (LIFI), and beam scanning, have attracted attention, and thus, methods and techniques for emitting light in all directions have been attracting attention.

For example, light traveling in the horizontal direction in the waveguide may be radiated in the vertical direction by using a grating coupler. Bragg reflector reflects the light radiated below the grid combiner among the light radiated by the grid combiner in the vertical direction, and the intensity of light through constructive interference between the light radiated above the grid combiner and the light reflected by the Bragg reflector It can be used as an optical communication device having the advantages of improving the resolution and low loss of light by increasing the.

However, this technique has the limitation that it is optimized so that constructive interference can only occur in a single wavelength of light.

Embodiments can provide a technique in which constructive interference can occur in multiple wavelengths of light by placing a control layer between the grating coupler and the reflector and adjusting the refractive index of the control layer, thereby improving beam steering resolution.

In addition, embodiments may provide a technique for adjusting the phase of the light emitted to the bottom of the grating coupler by changing the refractive index of the control layer in response to the voltage applied to the control layer.

In addition, the embodiments are formed by a plurality of electrodes for applying a voltage to the control layer to be spaced at a predetermined interval, respectively, it is possible to apply a constant voltage to each region of the control layer, thereby maintaining a constant refractive index throughout the control layer Technology can be provided.

In one embodiment, a beam adjusting apparatus includes: a grating coupler for radiating light incident from a waveguide, a reflector for reflecting light radiated below the grating coupler among the light emitted by the grating coupler; And a control layer positioned between the grating coupler and the reflector and configured to adjust a phase of light radiated to the bottom of the grating coupler.

The control layer may be implemented in a PN junction structure.

The control layer may adjust the phase of light emitted to the bottom of the grating coupler by changing the refractive index in response to the applied voltage.

The control layer may include a P (positive) region operating as a P-type semiconductor, a N (negative) region operating as an N-type semiconductor, and a depletion region located between the P region and the N region.

The device may further comprise an electrode for applying a voltage to the control layer.

The electrode may include a first electrode for applying a first voltage to the P region and a second electrode for applying a second voltage to the N region.

The first electrode may be connected to the P region through a first via, and the second electrode may be connected to the N region through a second via.

The first electrode and the second electrode may be formed on one surface of a cladding layer of the lattice coupler.

Each of the first electrode and the second electrode may include a plurality of electrodes spaced at a predetermined interval.

The reflector may be a distributed bragg reflector (DBR).

The reflector may be formed by alternately stacking an SiO ₂ layer and an Si layer.

The apparatus may further include a voltage controller for controlling the voltage applied to the regulating layer.

According to one or more exemplary embodiments, a method of manufacturing a beam steering apparatus includes: forming a reflector on a substrate for reflecting light emitted from a bottom of the grating coupler among light emitted by the grating coupler, and light emitted to the bottom of the grating coupler; Forming a control layer between the lattice coupler and the reflector for adjusting the phase of the lattice coupler; and forming the lattice coupler on the control layer.

The forming of the control layer may include forming the control layer in a PN junction structure.

The control layer may adjust the phase of light emitted to the bottom of the grating coupler by changing the refractive index in response to the applied voltage.

The forming of the PN junction structure may include forming an N (negative) region acting as an N-type semiconductor on the reflector, forming a depletion region on the N region, and forming a P-type semiconductor on the depletion region. It may include forming a P (positive) region to operate as.

The manufacturing method may further include forming an electrode for applying a voltage to the control layer.

The forming of the electrode may include forming a first electrode for applying a first voltage to the P region, and forming a second electrode for applying a second voltage to the N region. have.

The first electrode may be connected to the P region through a first via, and the second electrode may be connected to the N region through a second via.

The first electrode and the second electrode may be formed on one surface of a cladding layer of the lattice coupler.

Each of the first electrode and the second electrode may include a plurality of electrodes spaced at a predetermined interval.

The reflector may be a distributed bragg reflector (DBR).

The forming of the reflector on the substrate may include forming the reflector by alternately stacking an SiO ₂ layer and an Si layer on the substrate.

The manufacturing method may further include connecting a voltage controller for controlling the voltage applied to the control layer to the electrode.

의 변화를 나타낸 도면이다.
도 2는 격자 결합기에 입사하는 빛의 위상에 따르는 빛의 횡축 방사각

의 변화를 나타낸 도면이다.
도 3은 격자 결합기에서 빛의 파장 및 위상에 따른 빛의 종축 및 횡축 방사각이 변화하는 것을 나타낸 도면이다.
도 4는 격자 결합기의 격자 주기에 따라 빛이 방사되는 모습을 나타낸 도면이다.
도 5는 격자 결합기에 입사하는 빛의 파장에 따라 격자 결합기에서 빛이 방사하는 각도의 변화를 나타낸 도면이다.
도 6은 (a) 파장 변화에 따른 빛의 Far-field, (b) 세 개의 다른 파장에 따른 빛의 세기를 방사 각도에 나타낸 도면이다.
도 7은 단일 파장의 빛이 보강 간섭을 하도록 격자 결합기 하부에 브래그 반사기를 집적한 것을 나타낸 도면이다.
도 8은 브래그 반사기를 이용하여 빛의 분해능이 향상된 것을 나타낸 도면이다.
도 9는 일 실시예에 따른 빔(beam) 조정 장치의 사시도이다.
도 10은 일 실시예에 따른 빔 조정 장치의 평면도이다.
도 11은 일 실시예에 따른 빔 조정 장치의 측면도이다.
도 12는 일 실시예에 따른 빔 조정 장치의 정면도이다.
도 13은 일 실시예에 따른 빔 조정 장치의 측면 단면도이다.
도 14는 일 실시예에 따른 빔 조정 장치의 정면 단면도이다.
도 15는 일 실시예에 따른 빔 조정 장치의 정면 단면도이다.
도 16는 일 실시예에 따른 빔 조정 장치의 평면 확대도이다.
도 17은 일 실시예에 따른 빔 조정 장치의 측면 단면도이다.
도 18은 조절층의 굴절률 변화 전과 변화 후의 방사하는 빛의 패턴을 나타낸 도면이다.
도 19는 일 실시예에 따른 빔 조정 장치 제조방법을 나타낸 순서도이다.1 is a longitudinal axis of the radiation of light incident on the grating coupler according to the wavelength

The figure which shows the change of.
2 is the abscissa radial angle of light depending on the phase of light incident on the grating coupler.

The figure which shows the change of.
3 is a view showing that the longitudinal axis and the horizontal axis radiation angle of the light changes according to the wavelength and phase of the light in the grating coupler.
4 is a view showing a state in which light is radiated according to the lattice period of the lattice combiner.
5 is a view showing a change in the angle of light emitted from the grating coupler according to the wavelength of light incident on the grating coupler.
6 is a diagram showing (a) Far-field of light according to the wavelength change, and (b) the intensity of light according to three different wavelengths in the emission angle.
FIG. 7 illustrates the integration of a Bragg reflector under the grating coupler to allow constructive interference of light of a single wavelength.
FIG. 8 is a diagram illustrating an improvement in light resolution using a Bragg reflector.
9 is a perspective view of a beam adjusting apparatus according to an embodiment.
10 is a plan view of a beam steering apparatus according to an embodiment.
11 is a side view of a beam steering apparatus according to an embodiment.
12 is a front view of a beam adjusting apparatus according to an embodiment.
13 is a side cross-sectional view of the beam steering apparatus according to one embodiment.
14 is a front sectional view of the beam adjusting apparatus according to one embodiment.
15 is a front sectional view of the beam adjusting apparatus according to one embodiment.
16 is an enlarged plan view of a beam steering apparatus according to an embodiment.
17 is a side cross-sectional view of the beam conditioning apparatus according to one embodiment.
18 is a view showing a pattern of the emitted light before and after the change in the refractive index of the control layer.
19 is a flowchart illustrating a method of manufacturing a beam adjusting apparatus, according to an embodiment.

Hereinafter, exemplary embodiments will be described in detail with reference to the accompanying drawings. However, various changes may be made to the embodiments so that the scope of the patent application is not limited or limited by these embodiments. It is to be understood that all changes, equivalents, and substitutes for the embodiments are included in the scope of rights.

The terminology used herein is for the purpose of description and should not be construed as limiting. Singular expressions include plural expressions unless the context clearly indicates otherwise. In this specification, terms such as "comprise" or "have" are intended to indicate that there is a feature, number, step, operation, component, part, or combination thereof described on the specification, and one or more other features. It is to be understood that the present invention does not exclude the possibility of the presence or the addition of numbers, steps, operations, components, components, or a combination thereof.

Terms such as first or second may be used to describe various components, but the components should not be limited by the terms. The terms are for the purpose of distinguishing one component from another component only, for example, without departing from the scope of rights in accordance with the concepts of the embodiment, the first component may be named a second component, and similarly The second component may also be referred to as a first component.

Unless defined otherwise, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art. Terms such as those defined in the commonly used dictionaries should be construed as having meanings consistent with the meanings in the context of the related art, and shall not be construed in ideal or excessively formal meanings unless expressly defined in this application. Do not.

In addition, in the description with reference to the accompanying drawings, the same components will be given the same reference numerals regardless of the reference numerals and duplicate description thereof will be omitted. In the following description of the embodiment, if it is determined that the detailed description of the related known technology may unnecessarily obscure the gist of the embodiment, the detailed description thereof will be omitted.

Hereinafter, exemplary embodiments will be described in detail with reference to the accompanying drawings. However, the scope of the patent application is not limited or limited by these embodiments. Like reference numerals in the drawings denote like elements.

Hereinafter, the horizontal direction is defined as the direction of light incident on the grating coupler (z axis, see FIG. 1), and the vertical direction, the vertical axis, and the horizontal axis are all defined based on the horizontal direction.

의 변화를 나타낸 도면이다.1 is a longitudinal emission angle of light for each wavelength of light incident on a grating coupler.

The figure which shows the change of.

는 빛의 파장마다 달라진다. 이는, 격자 결합기의 위상 정합 조건(phase matching condition)에 의해 격자 결합기에서 방사하는 빛의 방사 각도가 빛의 파장(λ)에 종속되기 때문이다. 이에 관하여는 아래에서 도 4와 함께 상세히 설명하도록 한다.Referring to Fig. 1, the lattice coupler has λ ₁ , λ ₂ , λ ₃ ,... The emission angle of light emitted by the grating coupler when different wavelengths of light are incident, such as λ _n

Depends on the wavelength of the light. This is because the angle of radiation of light emitted from the grating coupler is dependent on the wavelength of light λ by the phase matching condition of the grating coupler. This will be described in detail with reference to FIG. 4 below.

는 격자 결합기에 입사하는 빛의 파장(λ) 변화를 통해 조절될 수 있다.In addition, when the direction of the light traveling in the waveguide and entering the grating coupler is in the horizontal direction, the grating coupler emits light in the vertical direction. Thus, the longitudinal radial angle of the light emitted by the lattice combiner

May be adjusted by changing a wavelength λ of light incident on the grating coupler.

의 변화를 나타낸 도면이다.2 is the abscissa radial angle of light depending on the phase of light incident on the grating coupler.

The figure which shows the change of.

The radiation angle Ψ of the light emitted by the grating coupler varies depending on the phases of light incident on the grating coupler (Φ ₁ , Φ ₂ , Φ ₃ ,... Φ _n ). The light emitted by each lattice combiner causes interference of light in free space. When the phase of light incident on the grating coupler changes through the phase adjuster, the light emitted by the grating coupler changes its radiation angle along the horizontal axis. Therefore, the horizontal axis of radiation Ψ of the light emitted by the grating coupler can be adjusted by changing the phase Φ of light incident on the grating coupler.

3 is a diagram showing that the longitudinal and horizontal axis radiant angles of light change according to the wavelength and phase of light.

)를 조절할 수 있게 된다. 격자 결합기의 기본 원리는 격자 결합기에 입사한 빛의 회절 현상을 통해 빛이 방사되는 것이다.3 shows that several lattice combiners are aligned. It can be seen that the change in the longitudinal radiation angle θ according to the wavelength change of the light incident on the grating coupler and the change in the transverse radiation angle Ψ according to the phase change. Therefore, when the wavelength λ and the phase Φ of the light incident on the grating coupler are adjusted, the emission angle of the light in the longitudinal axis and the horizontal axis direction (

) Can be adjusted. The basic principle of the grating coupler is that light is emitted through the diffraction phenomenon of light incident on the grating coupler.

4 is a view showing a state in which light is radiated according to the lattice period of the grating coupler, Figure 5 is a view showing a change in the angle of the light emitted from the grating coupler in accordance with the wavelength of light incident on the grating coupler.

Referring to FIG. 4, light enters a grating coupler through a waveguide, and light is emitted through a diffraction phenomenon of a phase matching condition. Equation 1 below represents a phase matching condition.

[Equation 1]

는 파수,

는 격자 결합기의 유효 굴절률,

는 자유공간에서 굴절률,

는 방사하는 빛의 각도,

은 회절 차수,

는 격자 결합기의 격자 주기이다. 격자 결합기에서 회절을 통해 방사하는 빛은 1 차수로 이용할 때 많은 빛을 방사할 수 있기 때문에

은 1, 자유공간에서 굴절률

는 1, 파수

는

이다. 이때 수학식 1에서 좌변을 종축 방사각

로 정리하면 아래의 수학식 2가 된다.

Is a watchtower,

Is the effective refractive index of the lattice coupler,

Is the refractive index in free space,

Is the angle of the emitted light,

Silver diffraction orders,

Is the lattice period of the lattice combiner. Because the light emitted by diffraction in the lattice combiner can emit a lot of light when used in the first order

Is 1, the refractive index in free space

Is 1, the guard

Is

to be. At this time, the left side of the longitudinal axis in the equation 1

In summary, the following Equation 2 is obtained.

[Equation 2]

와 격자 결합기의 유효 굴절률

는 일정하기 때문에 방사하는 빛의 각도

는 빛의 파장

의 변화에 따라 달라지게 된다.Grid cycle of grid combiner

Refractive index of the lattice coupler with

Is a constant angle of light

The wavelength of light

It depends on the change.

에 따라 방사하는 빛의 각도

가 변화하는 것을 알 수 있다. 회절 차수가 1로 고정임에도 불구하고, 빛의 방사 각도는 빛의 파장 변화에 따라 달라지게 된다. 이때, 빛은 격자 결합기의 상부만이 아니라 하부로도 방사된다.Referring to Figure 5, the wavelength of light in the grating combiner

The angle of light emitted by

You can see that changes. Although the diffraction order is fixed at 1, the emission angle of the light depends on the wavelength change of the light. At this time, light is emitted not only to the top of the grating coupler but also to the bottom.

FIG. 6 shows (a) the far-field of light as a change in wavelength, and (b) the normalized efficiency of light at three different wavelengths (1520 nm, 1550 nm, 1580 nm) to the radiation angle. The figure shown.

Referring to FIG. 6, a radiation angle of light having the strongest light intensity emitted from the lattice combiner according to each wavelength of light exists, and a radiation angle of light based on the emission angle of light having the strongest light intensity is present. As you move to the sides, the light intensity decreases. That is, in order to adjust the beam, light must be emitted at a single emission angle at a single wavelength to increase the intensity of light. Therefore, in order to improve the resolution of light, the light must be adjusted to emit at a single emission angle.

FIG. 7 illustrates the integration of a Bragg reflector under the grating coupler to allow constructive interference of light of a single wavelength.

When light enters the grating coupler, the grating coupler emits light to the top and bottom of the grating coupler. Light emitted to the bottom of the lattice combiner is an unavailable loss.

However, when the Bragg reflector is integrated below the grating coupler, the Bragg reflector reflects the light emitted to the bottom of the grating coupler, and the reflected light and the light radiated to the top of the grating coupler are recombined. At this time, when the light radiated to the grating coupler and the light reflected by the Bragg reflector are in phase, the two lights undergo constructive interference to increase the intensity of light radiated to the top of the grating coupler. At this time, the phase of the light reflected by the Bragg reflector is determined according to the distance D _R traveled by the light from the bottom of the grating coupler, and the D _R is adjusted according to the wavelength of the light. The reflected light can be in phase.

As a result of using the Bragg reflector, when the light radiated above the lattice coupler and the light reflected by the Bragg reflector have constructive interference with in-phase, the resolution of the light is improved.

However, if D _R is a fixed distance, the light emitted from the top of the grating coupler and the light reflected by the Bragg reflector can constructively interfere with only one wavelength of light. It becomes different and cannot make constructive interference.

FIG. 8 is a diagram illustrating an improvement in light resolution using a Bragg reflector.

FIG. 8 compares the radiation pattern (w / o reflector) when the Bragg reflector is integrated with the radiation pattern (w / o reflector) when the Bragg reflector is not integrated in the lattice combiner for light having a wavelength of 1550 nm. It was. Looking at the light pattern, it can be seen that the resolution of the light is improved when the Bragg reflector is integrated in the lattice coupler.

However, simply integrating the Bragg reflector into the grating coupler means that the distance D _R (see FIG. 7) of the light travels below the grating coupler is fixed, resulting in constructive interference of light only at light of a particular wavelength, and reinforcing light of other wavelengths. No interference

Embodiments seek to provide a technique by placing a control layer between the grating coupler and the reflector, which can cause constructive interference even in multiple wavelengths of light, thereby improving beam steering resolution. This will be described in detail below.

9 is a perspective view of a beam adjusting apparatus according to an embodiment, FIG. 10 is a plan view of a beam adjusting apparatus according to an embodiment, FIG. 11 is a side view of a beam adjusting apparatus according to an embodiment, and FIG. 12. Is a front view of the beam adjusting apparatus according to one embodiment, and FIG. 13 is a side sectional view of the beam adjusting apparatus according to the embodiment.

9 to 13, the beam adjusting apparatus 100 includes a grating coupler 200, an adjusting layer 300, and a reflector 400.

The beam adjusting device 100 may be used as an optical communication device having an advantage of low light loss by increasing the amount of light emitted from the beam adjusting device 100. Herein, the beam may refer to light having a wavelength and a phase or a ray of light. In addition, the amount of light emitted from the beam steering apparatus 100 may be increased through constructive interference.

The grating coupler 200 may serve to emit light incident from the waveguide (not shown). The grid coupler 200 may emit light traveling in the horizontal direction in the vertical direction. In this case, the longitudinal axis of the light may vary depending on the wavelength of the light incident on the grating coupler 200.

Grating coupler 200 may include a grating layer 210 and a cladding layer 220. For example, the lattice layer 210 may be implemented as a Si layer, and the cladding 220 layer may be implemented as an SiO ₂ layer.

The adjusting layer 300 may be positioned between the grating coupler 200 and the reflector 400, and adjust the phase of light radiated to the bottom of the grating coupler 200. For example, the adjustment layer 300 may adjust the phase of the light emitted to the lower portion of the grating coupler 200 by changing the refractive index in response to the applied voltage.

The adjustment layer 300 may be implemented in a PN junction structure. The adjustment layer 300 is positioned between the P (positive) region 310 operating as a P-type semiconductor, the N (negative) region 330 operating as an N-type semiconductor, and between the P region 310 and the N region 330. A depletion region 320 may be included.

The reflector 400 may reflect light emitted from the grid coupler 200 to the bottom of the grid coupler 200.

As an example, the reflector 400 may be a reflector in which dielectric layers having different refractive indices are alternately stacked, that is, a distributed bragg reflector (DBR).

As another example, the reflector 400 may be formed by alternately stacking an SiO ₂ layer and an Si layer. In this case, the layer in contact with the control layer 300 may be formed of a SiO ₂ layer for good bonding with the control layer 300.

14 is a front cross-sectional view of the beam adjusting apparatus according to an embodiment, FIG. 15 is a plan enlarged view of the beam adjusting apparatus according to an embodiment, and FIG. 16 is a side cross-sectional view of the beam adjusting apparatus according to the embodiment.

14 to 16, the beam adjusting apparatus 100 may further include an electrode 500 and a voltage controller 600.

The electrode 500 may apply a voltage to the adjustment layer 300.

The electrode 500 may include a first electrode 510 for applying a first voltage to the P region 310 and a second electrode 520 for applying a second voltage to the N region 330. The first electrode 510 may be connected to the P region 310 through the first via 511, and the second electrode 520 may be connected to the N region 330 through the second via 521. have.

The first electrode 510 and the second electrode 520 may be formed on one surface of the SiO ₂ layer of the lattice coupler 200. The first electrode 510 and the second electrode 520 may be formed on one surface of the cladding layer 220, that is, the SiO ₂ layer of the lattice coupler 200.

As shown in FIG. 16A, each of the first electrode 510 and the second electrode 520 may be implemented as one electrode, but as shown in FIG. 16B, the first electrode ( Each of the 510 and the second electrode 520 may include a plurality of electrodes spaced at a predetermined interval.

When the electrode 500 connected to the control layer 300 is connected to the control layer 300 as one electrode, current may not be evenly transmitted to each area of the control layer 300. In contrast, the plurality of electrodes can effectively apply the same voltage to each region of the adjustment layer 300. In this case, a plurality of power sources may be individually connected to the plurality of electrodes connected to the control layer.

The voltage controller 600 may control the voltage applied to the adjustment layer 300. In one embodiment, the voltage controller 600 may be connected to the electrode 500. The voltage controller 600 may change the refractive index of the adjusting layer by controlling the voltage applied to the adjusting layer 300.

17 is a side cross-sectional view of a beam adjusting apparatus according to an embodiment, and FIG. 18 is a view illustrating a pattern of radiating light before and after a change in refractive index of the adjusting layer.

Figure 17 respectively according to the wavelength (λ ₁ λ ₂₎ of the other light through the voltage control is applied to the control layer 300 to adjust the refractive index of the adjustment layer 300, so that each wavelength (λ ₁ of the other light λ _{Figure 2} shows the appearance of constructive interference in all. By applying a voltage applied to the control layer 300 for each wavelength of light differently, the refractive index of the control layer 300 is changed, whereby the light reflected by the reflector 400 and the light emitted above the grating coupler 200 In-phase reinforcement interference occurs, thereby improving the resolution of the beam control. In other words, two lights constructively interfere with each other, and finally, the intensity of light emitted to the upper portion of the grating coupler 200 increases.

18 is a pattern of light before changing the refractive index (n _PN) by applying a voltage to the control layer 300 in the light of 1520 nm wavelength was changed and (before n _PN control) (after n _PN control) radiation The figure shown. In this case, the distance between the grating coupler 200 and the reflector 400 is fixed so that constructive interference occurs in light having a wavelength of 1550 nm. The experimental results, it can be confirmed that the resolution of the light improved time is changed and the refractive index (n _PN) of the controlling layer 300, the refractive index, control layer 300 as compared to the resolution of the light when no not alter the (n _PN) of. Based on the experimental results, it can be concluded that if the refractive index n _PN of the control layer 300 is adjusted for each wavelength of light, resolution can be improved at all wavelengths of light.

19 is a flowchart illustrating a method of manufacturing a beam adjusting apparatus, according to an embodiment.

Referring to FIG. 19, a reflector for reflecting light emitted from a lower portion of the grating coupler among the light emitted by the grating coupler is formed on the substrate (1910). For example, the reflector may be implemented with a distributed bragg reflector (DBR). In another example, the reflector may be formed by alternately stacking an SiO ₂ layer and an Si layer on a substrate.

An adjusting layer is formed between the grating coupler and the reflector (1920) to control the phase of the light emitted to the bottom of the grating coupler. For example, the control layer may be formed of a PN junction structure. In addition, the PN junction structure forms an N (negative) region that operates as an N-type semiconductor on the reflector, forms a depletion region above the N region, and forms a P (positive) region that operates as a P-type semiconductor on the depletion region. Can be implemented. The adjustment layer may adjust the phase of light emitted to the bottom of the grating coupler by changing the refractive index in response to the applied voltage.

The lattice coupler is formed over the adjusting layer (1930).

An electrode for applying a voltage to the control layer is formed (1940). For example, the electrode may be implemented by forming a first electrode for applying the first voltage to the P region and forming a second electrode for applying the second voltage to the N region. In addition, the first electrode may be connected to the P region through the first via, and the second electrode may be connected to the N region through the second via. In another embodiment, the first electrode and the second electrode may be formed on one surface of the cladding layer of the lattice coupler. In addition, each of the first electrode and the second electrode may include a plurality of electrodes spaced apart by a predetermined interval.

A voltage controller for controlling the voltage applied to the control layer is connected to the electrode (1950).

Although the embodiments have been described with reference to the accompanying drawings, those skilled in the art may apply various technical modifications and variations based on the above. For example, the described techniques may be performed in a different order than the described method, and / or components of the described systems, structures, devices, circuits, etc. may be combined or combined in a different form than the described method, or other components. Or, even if replaced or substituted by equivalents, an appropriate result can be achieved.

Therefore, other implementations, other embodiments, and equivalents to the claims are within the scope of the following claims.

Claims (24)

A grating coupler for emitting light incident from the waveguide;
A reflector for reflecting light emitted from the lattice coupler to the bottom of the lattice coupler;
An adjusting layer positioned between the grating coupler and the reflector and configured to adjust a phase of light emitted below the grating coupler; And
A plurality of electrodes for applying a voltage to the control layer
Including,
And each of the plurality of electrodes is spaced at a predetermined interval.
The method of claim 1,
The control layer is implemented with a PN junction structure
Beam adjusting device.
The method of claim 1,
The control layer,
The refractive index changes in response to the applied voltage to adjust the phase of light radiated to the bottom of the grating coupler.
Beam adjusting device.
The method of claim 2,
The control layer,
A P (positive) region operating as a P-type semiconductor;
An N (negative) region operating as an N-type semiconductor; And
Depletion region located between P region and N region
Beam adjusting device comprising a.
delete The method of claim 4, wherein
The plurality of electrodes,
First electrodes for applying a first voltage to the P region; And
Second electrodes for applying a second voltage to the N region
Beam adjusting device comprising a.
The method of claim 6,
The first electrodes,
Connect to the P region through a first via,
The second electrodes,
Connecting to the N region through a second via
Beam adjusting device.
The method of claim 6,
The first electrodes and the second electrodes are formed on one surface of the cladding layer of the lattice coupler.
Beam adjusting device.
delete The method of claim 1,
The reflector is a distributed bragg reflector (DBR)
Beam adjusting device.
The method of claim 1,
The reflector,
SiO ₂ layer and Si layer are formed by alternately stacked
Beam adjusting device.
The method of claim 1,
Voltage controller for controlling the voltage applied to the control layer
Beam adjusting device further comprising.
Forming a reflector on a substrate for reflecting light emitted from the grid combiner to the bottom of the grid combiner;
Forming an adjusting layer between the grating coupler and the reflector to adjust the phase of light emitted to the bottom of the grating coupler;
Forming the lattice coupler on the control layer; And
Forming a plurality of electrodes for applying a voltage to the control layer
Including,
And each of the plurality of electrodes is spaced at a predetermined interval.
The method of claim 13,
Forming the control layer,
Forming the control layer into a PN junction structure
Beam adjusting device manufacturing method comprising a.
The method of claim 13,
The control layer,
The refractive index changes in response to the applied voltage to adjust the phase of light radiated to the bottom of the grating coupler.
Method of manufacturing beam adjusting device.
The method of claim 14,
Forming the PN junction structure,
Forming an N (negative) region on the reflector to operate as an N-type semiconductor;
Forming a depletion region on the N region; And
Forming a P (positive) region to operate as a P-type semiconductor on the depletion region
Beam adjusting device manufacturing method comprising a.
delete The method of claim 16,
Forming the plurality of electrodes,
Forming first electrodes for applying a first voltage to the P region; And
Forming second electrodes for applying a second voltage to the N region;
Beam adjusting device manufacturing method comprising a.
The method of claim 18,
The first electrodes,
Connect to the P region through a first via,
The second electrodes,
Connecting to the N region through a second via
Method of manufacturing beam adjusting device.
The method of claim 18,
The first electrodes and the second electrodes are formed on one surface of the cladding layer of the grating coupler
Method of manufacturing beam adjusting device.
delete The method of claim 13,
The reflector is a distributed bragg reflector (DBR)
Method of manufacturing beam adjusting device.
The method of claim 13,
Forming the reflector on the substrate,
Alternately stacking an SiO ₂ layer and an Si layer on the substrate to form the reflector
Beam adjusting device manufacturing method comprising a.
The method of claim 13,
Connecting a voltage controller for controlling the voltage applied to the control layer to the plurality of electrodes
Beam adjusting device manufacturing method further comprising.

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