KR102064145B1 - Thin film deposition apparatus - Google Patents

Abstract

The present invention relates to a thin film deposition apparatus, the thin film deposition apparatus according to the present invention is provided with an outer chamber and a plurality of inner chambers provided in the outer chamber to provide a processing space for processing the substrate, each of the inner chambers An upper cover, a gas supply part provided at the upper cover to supply a process gas to the substrate, and movable upward and downward with respect to the upper cover to provide a processing space between the gas supply part and to support the substrate; And a substrate support portion, an exhaust line connected to a central portion of the upper cover to exhaust residual gas, and a baffle provided in the exhaust line and having a predetermined displacement.

Description

Thin film deposition apparatus

The present invention relates to a thin film deposition apparatus.

As a deposition method for forming a thin film on a substrate such as a semiconductor wafer (hereinafter referred to as a substrate), chemical vapor deposition (CVD), plasma enhanced chemical vapor deposition (PECVD), atomic layer Techniques such as deposition method (ALD, atomic layer deposition) are used.

5 is a schematic view showing a basic concept of atomic layer deposition among substrate deposition methods. Referring to FIG. 5, in the atomic layer deposition method, a raw material gas including a raw material such as trimethyl aluminum (TMA) is injected onto a substrate, and then an inert purge gas such as argon (Ar) is injected to discharge residual gas and unreacted material. Is evacuated to adsorb a single molecular layer on the substrate. In addition, after injecting a reaction gas containing a reactant such as ozone (O ₃ ) reacting with the raw material, an inert purge gas is injected to exhaust unreacted gases and by-products and form a single atomic layer (Al-O) on the substrate. do.

However, when the thin film is formed by the conventional atomic layer deposition method, since the aforementioned steps are performed, productivity (Throughput) is lowered compared to other deposition methods. Therefore, in the case of depositing a thin film by the atomic layer deposition method, it is necessary to develop a technology for increasing productivity.

In order to solve the above problems, an object of the present invention is to provide a thin film deposition apparatus that can improve productivity when depositing a thin film on a substrate by atomic layer deposition.

In addition, an object of the present invention is to provide a thin film deposition apparatus capable of improving the uniformity of the film thickness deposited on each substrate when the thin film is deposited on a plurality of substrates by the atomic layer deposition method.

An object of the present invention as described above is provided with an outer chamber and a plurality of inner chambers provided in the outer chamber to provide a processing space for processing the substrate, each inner chamber is provided on the upper cover and the upper cover A gas supply part supplying a process gas to the substrate, a substrate support part supporting the substrate while providing a processing space between the gas supply part and being provided to be movable up and down with respect to the upper cover; It is achieved by a thin film deposition apparatus characterized in that it comprises an exhaust line connected to the central portion for exhausting the remaining gas, and a baffle provided in the exhaust line having a predetermined exhaust amount.

Here, the baffle may be provided in the exhaust line adjacent to the upper cover.

Meanwhile, when the substrate support is raised, a predetermined gap may be formed between the upper cover and the substrate support.

In addition, the displacement of the baffle may be adjusted according to the thickness of the film deposited on the substrate of each inner chamber.

For example, the displacement of the baffle towards the center of the outer chamber may be relatively higher than the displacement of the baffle towards the outer portion of the outer chamber.

In this case, when a plurality of exhaust holes are formed in the baffle, the exhaust holes facing the center of the outer chamber are relatively larger in number, larger in size, or larger than the exhaust holes facing the outer chamber of the outer chamber. It can be relatively larger in number and larger in size.

In addition, when the exhaust slit is formed in the baffle, the exhaust slit facing the center of the outer chamber may be relatively wider than the exhaust slit facing the outer portion of the outer chamber.

Furthermore, when the exhaust slit and the exhaust hole are formed together in the baffle, the exhaust slit is formed on the side toward the center of the outer chamber so that the exhaust amount is relatively higher, and the exhaust hole is formed on the side toward the outer side of the outer chamber. Can be.

On the other hand, the remaining gas is exhausted between the upper cover and the gas supply unit and further comprises an exhaust passage connected to the exhaust line, a buffer space having a larger inner product can be formed in at least a portion of the exhaust passage. .

In this case, the buffer space may be formed in front of the exhaust passage is connected to the exhaust line.

Further, the buffer space may be formed between the upper cover and the upper surface of the gas supply unit.

According to the present invention having the above-described configuration, it is possible to improve productivity when depositing a thin film on a substrate by atomic layer deposition.

In addition, according to the present invention, in the case of depositing thin films on a plurality of substrates by the atomic layer deposition method, it is possible to improve the uniformity of the film thickness deposited on each substrate.

1 is a schematic view showing an outer chamber of a thin film deposition apparatus according to an embodiment of the present invention,
2 is a cross-sectional view of the inner chamber,
3 is a plan view of the baffle,
4 is a plan view illustrating a baffle according to another embodiment;
5 is a schematic diagram illustrating a conventional ALD method.

Hereinafter, a thin film deposition apparatus 1000 according to embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 is a schematic view showing an outer chamber of a thin film deposition apparatus 1000 according to an embodiment of the present invention.

The thin film deposition apparatus 1000 according to the present invention is a device for depositing a thin film on a substrate by atomic layer deposition (ALD: Atomic layer deposition).

As a deposition method for forming a thin film on a substrate, an atomic layer deposition method injects a source gas onto a substrate, and then inert purge gas to inject the remaining gas and unreacted material to adsorb a single molecule layer on the substrate. After injecting the reaction gas reacting with the raw material, an inert purge gas is injected to exhaust unreacted gas and by-products to form a single atomic layer on the substrate.

However, when the thin film is formed by the atomic layer deposition method, since the raw material gas supply, purge, reaction gas supply, and purge steps are performed, productivity is reduced.

Therefore, in the case of depositing a thin film by atomic layer deposition, in order to increase productivity, dozens of substrates are loaded in one chamber to perform a deposition process, or space division or time division for 3-5 substrates. Semi-batch type and the like to perform the deposition process is being developed.

However, since the arrangement method stacks dozens of substrates in one chamber and deposits thin films, the uniformity of the thin films deposited on the substrates is reduced, thereby degrading the quality of the films. In addition, in the semi-batch method, the process gas is supplied while the substrate is rotated, or the process gas is sequentially supplied while the substrate is fixed, and deposition is performed, and productivity is poor.

FIG. 1 shows a thin film deposition apparatus 1000 which can improve productivity while maintaining excellent film quality such as improving the uniformity of the film thickness in the case of deposition by atomic layer deposition.

Referring to FIG. 1, the thin film deposition apparatus 1000 may include an outer chamber 10 and a processing space 112 provided inside the outer chamber 10 to process a substrate W (see FIG. 2). It may be provided with a plurality of inner chamber (100, 200, 300, 400) for providing a reference. In FIG. 1, four inner chambers 100, 200, 300, and 400 are provided inside the outer chamber 10, but are not limited thereto, and the inner chambers 100, 200, 300, and 400 may be provided. The number of can be modified as appropriate.

The substrate W may be inserted through one side of the outer chamber 10 to be seated on each of the inner chambers 100, 200, 300, and 400. To this end, a transfer device (not shown) for moving the substrate W may be provided at an inner central portion of the outer chamber 10.

2 is a cross-sectional view illustrating an internal configuration of one inner chamber 100 among the inner chambers 100, 200, 300, and 400 positioned inside the outer chamber 10.

2, the inner chamber 100 is provided in the upper cover 102, the upper cover 102, the gas supply unit 114 for supplying a process gas to the substrate (W), the upper cover ( It is provided to be movable up and down relative to the 102 is provided with a processing space 112 between the gas supply unit 114 and the substrate supporting portion 107 for supporting the substrate (W), the central portion of the upper cover 102 It may be connected to the exhaust line 110 for exhausting the remaining gas.

The inner chamber 100 is provided in plural inside the outer chamber 10 described above, and each of the inner chambers 100, 200, 300, and 400 provides a processing space 112 in which the substrate W is processed. come. Therefore, even when one outer chamber 10 is provided, the deposition process can be performed simultaneously on the substrate W corresponding to the number of the inner chambers 100 provided inside the outer chamber 10. .

In addition, each of the internal chambers 100, 200, 300, and 400 may include a gas supply unit 114 that supplies process gases, such as source gas and reaction gas, to the substrate W separately, thereby providing the substrate W. FIG. The uniformity of the thin film deposited on the) can be improved. Hereinafter, the configuration of the inner chamber 100 will be described.

First, the inner chamber 100 includes a substrate support 107 which is provided to be movable upward and downward toward the upper cover 102 and the upper cover 102.

The substrate support 107 may include a heating member (not shown) such as a heater to heat the substrate W to a predetermined temperature. In addition, the substrate support 107 is provided to be movable up and down a predetermined distance. Therefore, when the substrate support 107 is raised, the processing space 112 may be provided between the upper cover 102.

In this case, a gas supply unit 114 may be provided inside the upper cover 102 to supply a process gas to the substrate W.

Accordingly, when the substrate support 107 is raised, the processing space 112 is provided between the upper cover 102 and, more specifically, the processing between the substrate support 107 and the gas supply 114. Space 112 is provided.

At this time, the substrate support 107 is raised to between the upper cover 102 and the substrate support 107 to provide a processing space 112 between the substrate support 107 and the gas supply 114. The predetermined interval 130 may be formed.

That is, as shown in the drawing, a predetermined interval 130 may be formed between the lower end of the upper cover 102 and the upper surface of the substrate support 107.

When the deposition process is repeated by the thin film deposition apparatus 1000, the substrate support part 107 is repeatedly moved up and down. In this case, the lower end of the upper cover 102 is an upper surface of the substrate support part 107. Contact repeatedly.

When the above-described contact is repeated, particles may be generated between the lower end of the upper cover 102 and the upper surface of the substrate support 107 to be introduced into the processing space 112 of the substrate W. In addition, as the temperature of the deposition process with respect to the substrate (W) increases, the above-described particle inflow may occur more frequently.

Accordingly, in the case of the thin film deposition apparatus 1000 according to the present invention, a predetermined interval 130 is formed between the upper cover 102 and the substrate support 107 in order to solve the problems caused by the above-described particle inflow. Can be. That is, even when the substrate support 107 moves up and down, the lower end of the upper cover 102 and the upper surface of the substrate support 107 do not come into contact with each other to block particle generation.

On the other hand, the gas supply unit 114 may be provided with a shower head 104 is connected to the gas supply line 120 to supply a process gas toward the substrate (W).

The shower head 104 has a spray plate 105 having a plurality of spray holes through which the process gas is injected, and a rear plate 106 which provides a space in which the process gas is dispersed between the spray plate 105. It may be provided.

On the other hand, in the case where the thin film deposition apparatus 1000 according to the present invention applies a RF power to generate a plasma to proceed with the process, the gas supply unit 114 is formed on the outer side of the insulator 108 and the insulator 108. The cover unit 109 may be further provided.

When the RF power is applied to the shower head 104 by an RF power applying unit (not shown), the insulation unit 108 may be provided to surround the shower head 104 for insulation.

In this case, the cover part 109 is provided at the side and the upper part of the insulating part 108, that is, the outer part of the insulating part 108.

Meanwhile, the process gas supplied toward the substrate W through the shower head 104 is exhausted through the exhaust line 110 described above.

In this case, an exhaust passage 132 connecting the processing space 112 to which the process gas is supplied and the exhaust line 110 is provided.

The exhaust passage 132 may be formed along a space between the upper cover 102 and the gas supply unit 114. That is, the upper cover 102 and the gas supply unit 114 are formed spaced apart by a predetermined interval, and the exhaust passage 132 along the space formed by the upper cover 102 and the gas supply unit 114 spaced apart ) Is provided.

Specifically, the exhaust passage 132 is provided along the space between the side of the gas supply unit 114 and the upper cover 102 and the upper surface of the gas supply unit 114 and the upper cover 102.

The remaining gas exhausted along the exhaust passage 132 is exhausted to the outside of the inner chamber 100 through the exhaust line 110.

At this time, the exhaust line 110 is connected to the central portion of the upper cover (102). That is, when the exhaust line 110 pumps the residual gas from the processing space 112 and exhausts the residual gas, the exhaust line 110 is not connected to any one side from the center of the upper cover 102. It is connected to the center of the upper cover 102 to pump the remaining gas to exhaust. As such, when the exhaust line 110 is connected to the central portion of the upper cover 102 to exhaust the remaining gas, the remaining gas may be uniformly exhausted when the remaining gas is exhausted from the processing space 112. .

Meanwhile, referring to FIG. 1, the exhaust lines 110, 210, 310, and 410 of each of the inner chambers 100, 200, 300, and 400 are connected to the connection lines 510 and 520 in the thin film deposition apparatus 1000. do.

In this case, the first connection line 510 may be connected to the pair of exhaust lines 110 and 210, and the second connection line 520 may be connected to the other pair of exhaust lines 310 and 410. In this case, the first connection line 510 and the second connection line 520 may be recombined to exhaust the remaining gas through one pumping unit (not shown).

In addition, as described above, since the processing space 112 of the inner chamber 100 does not maintain a completely closed state, gas may flow out of the inner chamber 100 into the outer chamber 10. . Therefore, an exhaust unit (not shown) may be further provided to pump and exhaust the internal gas of the outer chamber 10. Although not shown in the drawing, the exhaust unit may exhaust the gas inside the outer chamber 10 through the side or bottom of the outer chamber 10.

In this case, the exhaust part may be connected to be spaced apart from the center of the outer chamber 10 by a predetermined distance. A transfer device for moving the substrate W to the inner chambers 100, 200, 300, and 400 may be installed at the bottom of the center of the outer chamber 10, and the outer chamber 10 may also be provided. This is because various exhaust lines 110, 210, 310, and 410 connected to the inner chambers 100, 200, 300, and 400 may be connected to the central portion of the lead of the gas supply line.

Therefore, even when the gas remaining in the outer chamber 10 is exhausted by the exhaust unit, the inner central region (“A” region) of the outer chamber 10 does not exhaust the remaining gas smoothly and remains. More gas may remain relative to other areas.

In this case, since the processing space 112 of the inner chamber 100 is not completely enclosed as described above, when the deposition process is performed in the inner chamber 100, the respective inner chambers 100, 200, The thickness of the thin film deposited on the substrate W mounted on the 300 and 400 may vary.

For example, as shown in FIG. 1, when four inner chambers 100, 200, 300, and 400 are provided inside the outer chamber 10, each of the inner chambers 100, 200, 300, and 400 is provided. The thickness of the thin film deposited on the substrate of the c) is relatively thicker as it gets closer to the central region (“A” region) of the outer chamber 10, and is farther from the central region (“A” region) of the outer chamber 10. The higher the quality (or toward the outer portion of the outer chamber 10) can be relatively thin.

This is because a relatively large amount of remaining gas remains in the central region (“A” region) of the outer chamber 10, and thus, in each of the inner chambers 100, 200, 300, and 400, This is because the process gas stays relatively long in the near area.

Therefore, in the present invention, in order to solve the above-mentioned problems, the amount of remaining gas to be exhausted can be changed according to the thickness of the film deposited on the substrate when the remaining gas is exhausted from each of the internal chambers 100, 200, 300, and 400. .

Specifically, the thin film deposition apparatus 1000 according to the present invention has a baffle 140 in the exhaust line 110, 210, 310, 410 of each of the inner chambers 100, 200, 300, and 400 as shown in FIG. 2. ) May be provided.

3 is a plan view illustrating a baffle 140 provided in the exhaust line 110 of one inner chamber 100.

2 and 3, the baffle 140 may include body parts 142 and 142 ′ having a predetermined displacement. In this case, the displacement may be determined by an exhaust hole 144 or an exhaust slit 144 'formed in the body parts 142 and 142'.

The baffle 140 may be provided along the inside of the exhaust line 110. The remaining gas may be exhausted through the exhaust hole 144 or the exhaust slit 144 ′ of the baffle 140. In addition, the baffle 140 may be integrally formed with the exhaust line 110 or may be formed as a separate member.

In this case, the baffle 140 may be made of a material such as aluminum or ceramic, and may also be made of the same material as the inner chambers 100, 200, 300, and 400. For example, when the inner chambers 100, 200, 300, and 400 are made of aluminum, the baffle 140 may be made of aluminum in the same manner.

Meanwhile, the displacement of the baffle 140 may be adjusted according to the thickness of the film deposited on the substrate W of each of the inner chambers 100, 200, 300, and 400.

That is, the thickness of the film deposited on the substrate of each of the inner chambers 100, 200, 300, and 400 has a constant tendency with respect to the central region (“A” region) of the outer chamber 10.

For example, in the region close to the central region (“A” region) of the outer chamber 10 as described above, the thickness of the film deposited on the substrate of each of the inner chambers 100, 200, 300, and 400 is increased, On the contrary, as the distance from the central region (“A” region) of the outer chamber 10 increases, the thickness of the film deposited on the substrate of each of the inner chambers 100, 200, 300, and 400 may become thinner. This is because a relatively large amount of remaining gas remains in the central region (“A” region) of the outer chamber 10.

Therefore, when the amount of gas remaining in the processing space 112 of each of the inner chambers 100, 200, 300, and 400 is controlled by the baffle 140, the inner chambers 100, 200, 300, The uniformity of the film deposited on the substrate W of the 400 can be improved.

4 is a plan view illustrating a baffle according to another exemplary embodiment.

Referring to FIG. 4, the displacements of the baffles 1400, 2400, 3400, and 4400 from the baffles 1400, 2400, 3400, and 4400 toward the central region (“A” region) of the outer chamber 10 are determined by the displacement of the baffles 1400, 2400, 3400, and 4400. It may be configured to be relatively larger than the displacement of the baffles 1400, 2400, 3400, 4400 toward the outer portion of the outer chamber 10.

That is, since a large amount of remaining gas remains in the central region (“A” region) of the outer chamber 10, the gas is closer to the central region (“A” region) of the outer chamber 10 in order to reduce the remaining time of the remaining gas. The baffles 1400, 2400, 3400, and 4400 (or toward the center region (“A” region) of the outer chamber 10) may be configured to have a relatively large displacement.

To this end, as shown in (a) of FIG. 4, the exhaust hole 1410 of the baffle 1400 facing the center region (“A” region) of the outer chamber 10 is formed in the outer chamber 10. It may be larger in size than the exhaust hole 1420 of the baffle 1400 facing the outer portion.

In addition, as illustrated in FIG. 4B, the exhaust hole 2410 of the baffle 2400 facing the center region (“A” region) of the outer chamber 10 is an outer portion of the outer chamber 10. It may be larger in number than the exhaust hole 2420 of the baffle 2400 facing the negative.

In this case, the circumferential spacing of the exhaust hole 2410 of the baffle 2400 facing the center region (“A” region) of the outer chamber 10 is toward the outer portion of the outer chamber 10. It may be relatively narrower than the exhaust hole (2420).

Furthermore, although not shown in the drawing, the number of exhaust holes of the baffle facing the center region (“A” region) of the outer chamber 10 is relatively large compared to the exhaust holes of the baffle facing the outer portion of the outer chamber 10. More and larger.

In addition, as shown in FIG. 4C, when the exhaust slit is formed in the baffle 3400, the exhaust slit 3410 facing the central region “A” of the outer chamber 10 is disposed at the outside. The width of the chamber 10 may be larger than that of the exhaust slit 3420 toward the outer portion of the chamber 10.

In addition, as shown in (d) of FIG. 4, when the exhaust slit and the exhaust hole are formed together in the baffle 4400, the amount of exhaust gas flows toward the central region “A” of the outer chamber 10. Exhaust slits 4410 may be formed to be larger, whereas exhaust holes 4420 may be formed on the outer side of the outer chamber 10.

On the other hand, as described above, in order to adjust the amount of gas remaining in each of the internal chambers 100, 200, 300, and 400 by the baffle 140, the baffle 140 controls the exhaust line 110. It is provided along, but preferably located as close to the processing space 112 as possible.

Therefore, the baffle 140 may be provided in the exhaust line 110 adjacent to the upper cover 102. Although it may be spaced apart from the upper cover 102 along the exhaust line 110, in this case, the residual gas that is exhausted even if the size or number of the exhaust holes 142 of the baffle 140 is adjusted The amount of control is not easy.

Therefore, the baffle 140 may be provided in the exhaust line 110 adjacent to the upper cover 102 to be as close as possible to the processing space 112.

On the other hand, when the baffle 140 is located closer to the processing space 112 than the exhaust line 110, for example, the baffle 140 is located in the exhaust passage 132 or the buffer space 150. If provided, the amount of residual gas to be exhausted may be easier to adjust. However, in this case, since the baffle 140 is very close to the processing space 112, particles and the like may accumulate in the baffle 140 at the time of exhausting, and the particles may be affected by gravity or the like. It can be easily introduced into. Therefore, the baffle 140 is preferably provided in the exhaust line 110 adjacent to the upper cover 102 in order to control the exhaust amount of the remaining gas while blocking the inflow of particles into the processing space 112.

On the other hand, when the residual gas is exhausted along the exhaust passage 132 described above, the buffer space 150 having a larger inner product relative to at least a portion of the exhaust passage 132 so that the remaining gas is more uniformly exhausted. ) May be formed.

The buffer space 150 having a larger internal volume than the other flow paths along the exhaust passage 132 may allow the remaining gas to be uniformly exhausted in the buffer space 150.

As shown in the drawing, the buffer space 150 may be formed at a front end of the exhaust passage 132 connected to the exhaust line 110. For example, the buffer space 150 may be formed between the upper cover 102 and the upper surface of the gas supply unit 1140.

For example, if the buffer space is formed between the side surface of the gas supply part 114 and the upper cover 102, the buffer space 150 may be scattered in the buffer space 150 because the distance from the processing space 112 is very close. Foreign substances, such as particles, may be introduced into the processing space 112. Therefore, in order to prevent the inflow of foreign matters, the buffer space 150 is formed spaced apart from the processing space 112, and further formed in the front end of the exhaust line (110).

On the other hand, when the residual gas is exhausted along the exhaust passage 132 described above, if the edge region is sharply formed in the bent portion or the bent portion of the exhaust passage 132, exhaust of the residual gas may be more difficult. . Therefore, the corner region formed along the exhaust passage 132 may be rounded or chamfered so that the remaining gas can be more effectively exhausted.

In the above description, one inner chamber 100 among the inner chambers provided in the outer chamber 10 has been described, but the configuration of the other inner chambers 200, 300, and 400 is also described in the above-described inner chamber 100. Since the configuration is the same as that of repeated description is omitted.

Although the above has been described with reference to a preferred embodiment of the present invention, those skilled in the art to various modifications and changes to the present invention without departing from the spirit and scope of the invention described in the claims described below You can do it. Therefore, it should be seen that all modifications included in the technical scope of the present invention are basically included in the scope of the claims of the present invention.

10.Outer chamber
100, 200, 300, 400 ... inner chamber
102.Top cover
104 ... shower head
110.Exhaust Line
114.Gas Supply Section
120 gas supply line
140 ... baffle
150 ... Buffer Space

Claims (11)

Outer chamber; And
A plurality of inner chambers provided inside the outer chamber to provide a processing space in which a substrate is processed;
Each inner chamber
An upper cover;
A gas supply unit provided in the upper cover to supply a process gas to the substrate;
A substrate support part provided to be movable up and down with respect to the upper cover to provide a processing space between the gas supply part and to support the substrate;
An exhaust line connected to a central portion of the upper cover to exhaust remaining gas;
And a baffle provided in the exhaust line and having a predetermined displacement.
Thin film deposition apparatus characterized in that a predetermined gap is formed between the upper cover and the substrate support when the substrate support is raised. The method of claim 1,
The baffle is a thin film deposition apparatus, characterized in that provided in the exhaust line adjacent to the upper cover. delete The method of claim 1,
Thin film deposition apparatus, characterized in that the displacement of the baffle is adjusted according to the thickness of the film deposited on the substrate of each inner chamber. The method of claim 4, wherein
Thin film deposition apparatus, characterized in that the displacement of the baffle toward the center of the outer chamber relative to the displacement of the baffle toward the outer portion of the outer chamber. The method of claim 5,
When a plurality of exhaust holes are formed in the baffle, the exhaust holes toward the center of the outer chamber are relatively larger in number, larger in size, or relatively larger in number than the exhaust holes facing the outer chamber. Thin film deposition apparatus, characterized in that more and larger in size. The method of claim 5,
And an exhaust slit formed in the baffle, wherein the exhaust slit facing the center of the outer chamber is relatively wider than the exhaust slit facing the outer chamber. The method of claim 5,
When the exhaust slit and the exhaust hole are formed together in the baffle, the exhaust slit is formed at the side toward the center of the outer chamber so that the exhaust amount is relatively higher, and the exhaust hole is formed at the side toward the outer side of the outer chamber. Thin film deposition apparatus. The method of claim 1,
The gas is further provided between the upper cover and the gas supply unit and further comprises an exhaust passage connected to the exhaust line,
Thin film deposition apparatus, characterized in that the buffer space is formed in at least a portion of the exhaust passage. The method of claim 9,
The buffer space is a thin film deposition apparatus, characterized in that formed in the front end of the exhaust passage is connected to the exhaust line. The method of claim 9,
The buffer space is thin film deposition apparatus, characterized in that formed between the upper cover and the upper surface of the gas supply.

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