KR102060461B1 - Semiconductor light emitting device - Google Patents

Abstract

The present invention relates to a semiconductor light emitting device with high ultraviolet output efficiency. According to the present invention, the semiconductor light emitting device comprises: a substrate; a first semiconductor layer disposed on the substrate and having first conductivity; an active layer disposed on the first semiconductor layer and generating an ultraviolet ray through recoupling between an electron and a hole; a second semiconductor layer disposed on the active layer and having second conductivity different from the first conductivity; a first electrode electrically connected to the first semiconductor layer; a second electrode electrically connected to the second semiconductor layer; an insulation layer disposed on the first and second semiconductor layers and the active layer; a first pad electrode formed on the insulating layer and electrically connected to the first electrode; and a second pad electrode formed on the insulating layer and electrically connected to the second electrode.

Description

Semiconductor Light Emitting Device {SEMICONDUCTOR LIGHT EMITTING DEVICE}

The present disclosure relates to a semiconductor light emitting device as a whole, and more particularly to a semiconductor light emitting device having high light emission efficiency.

This section provides background information related to the present disclosure which is not necessarily prior art.

1 is a view showing an example of a conventional semiconductor light emitting device.

The semiconductor light emitting device includes a growth substrate 10 (eg, a sapphire substrate) and a growth layer 10, a buffer layer 20 as a plurality of semiconductor layers, and a first semiconductor layer 30 having a first conductivity (eg, an n-type GaN layer). ), An active layer 40 that generates light through recombination of electrons and holes (e.g., INGaN / (In) GaN MQWs), a second semiconductor layer 50 having a second conductivity different from the first conductivity (e.g., p-type GaN) Layers) are sequentially deposited. The buffer layer 20 may be omitted. A translucent conductive film 60 for current diffusion and an electrode 70 serving as a bonding pad are formed thereon, and the electrode 80 serving as a bonding pad is formed on the first semiconductor layer 14 which is etched and exposed. : Cr / Ni / Au laminated metal pad) is formed. The semiconductor light emitting device of the form as shown in FIG. 1 is particularly called a lateral chip. Here, when the growth substrate 10 side is electrically connected to the outside becomes a mounting surface.

2 is a view showing another example of the semiconductor light emitting device shown in US Patent No. 7,262,436. For convenience of description, reference numerals have been changed.

The semiconductor light emitting device includes a growth substrate 10 and a growth substrate 10, a first semiconductor layer 30 having a first conductivity, an active layer 40 that generates light through recombination of electrons and holes, and a first conductivity. A second semiconductor layer 50 having another second conductivity is sequentially deposited, and there are formed three electrode layers 90, 91, 92 for reflecting light toward the growth substrate 10 side. . The first electrode film 90 may be an Ag reflecting film, the second electrode film 91 may be a Ni diffusion barrier, and the third electrode film 92 may be an Au bonding layer. An electrode 80 serving as a bonding pad is formed on the etched and exposed first semiconductor layer 30. Here, when the electrode film 92 side is electrically connected to the outside, it becomes a mounting surface. A semiconductor light emitting device chip of the same type as that of FIG. 2 is particularly referred to as a flip chip. In the flip chip illustrated in FIG. 2, the electrode 80 formed on the first semiconductor layer 30 is at a lower level than the electrode films 90, 91, 92 formed on the second semiconductor layer, but may be formed at the same height. You can also do that. The height reference may be the height from the growth substrate 10. Semiconductor light emitting devices include vertical chips in addition to lateral chips or flip chips.

3 is a view illustrating another example of the semiconductor light emitting device disclosed in Korean Laid-Open Patent Publication No. 2015-0055390. For convenience of description, some reference numerals have been changed.

The semiconductor light emitting device is a flip chip, a growth substrate 10 (eg, a sapphire substrate), a plurality of semiconductor layers on the growth substrate 10, a buffer layer 20, a first semiconductor layer 30 having a first conductivity (eg: n-type semiconductor layer), an active layer 40 for generating light through recombination of electrons and holes (e.g., INGaN / (In) GaN MQWs), a second semiconductor layer 50 having a second conductivity different from the first conductivity : p-type semiconductor layer) are deposited one by one. The buffer layer 20 may be omitted. A transmissive conductive film 60 for current diffusion and a second pad electrode 70 serving as a bonding pad are formed thereon, and a first pad serving as a bonding pad is etched on the exposed first semiconductor layer 30. A pad electrode 80 (for example, a Cr / Ni / Au laminated metal pad) is formed. In addition, as an electrode structure for lowering the operating voltage of the semiconductor light emitting device, the first electrode 51 formed in the first semiconductor layer (n-type semiconductor layer) and the second electrode formed in the second semiconductor layer (p-type semiconductor layer) ( 52).

4 is a view illustrating an example of a semiconductor light emitting device disclosed in Korean Laid-Open Patent Publication No. 2014-0073160. For convenience of description, some reference numerals have been changed.

The first semiconductor layer 23 is formed on the substrate 21, and the active layer 25 and the second semiconductor layer 27 are positioned on the first semiconductor layer 23. The substrate 21 is a substrate for growing a gallium nitride based semiconductor layer, for example, may be a sapphire substrate, a silicon carbide substrate, or a gallium nitride substrate, and in particular, may be a sapphire substrate.

A plurality of mesas M spaced apart from each other may be formed on the first semiconductor layer 23, and the plurality of mesas M may include the active layer 25 and the second semiconductor layer 27, respectively. have. The active layer 25 is positioned between the first semiconductor layer 23 and the second semiconductor layer 27. Meanwhile, the reflective electrodes 30 are located on the plurality of mesas M, respectively.

In plan view as shown in FIG. 4A, the second semiconductor layer 27 and the active layer 25 are formed to surround the first semiconductor layer 23. On the plane, the second semiconductor layer 27 and the active layer 25 are formed in an island shape surrounded by the first semiconductor layer 23.

Recently, development of semiconductor light emitting devices emitting ultraviolet light has been actively performed, and a plurality of semiconductor layers of the semiconductor light emitting devices emitting ultraviolet light are based on aluminum gallium nitride (AlGaN) material. However, aluminum gallium nitride (AlGaN) material has a high sheet resistance, so the spread of current is not good. In addition, ultraviolet light having a short wavelength is absorbed by the second semiconductor layer, the electrode, and the pad electrode, thereby increasing the temperature of the semiconductor light emitting device and reducing the light emission efficiency of the semiconductor light emitting device.

The present disclosure is to provide a semiconductor light emitting device that improves the light emission efficiency of the short ultraviolet light.

This is described later in the section titled 'Details of the Invention.'

This section provides a general summary of the disclosure and is not a comprehensive disclosure of its full scope or all, provided that this is a summary of the disclosure. of its features).

According to one aspect of the present disclosure, an semiconductor light emitting device includes: a substrate; A first semiconductor layer provided on the substrate and having a first conductivity; An active layer provided on the first semiconductor layer and generating ultraviolet rays through recombination of electrons and holes; A second semiconductor layer provided on the active layer and having a second conductivity different from the first conductivity; A first electrode electrically connected to the first semiconductor layer; A second electrode electrically connected to the second semiconductor layer; An insulating layer formed on the first semiconductor layer, the second semiconductor layer, and the active layer; A first pad electrode formed on the insulating layer and electrically connected to the first electrode; And a second pad electrode formed on the insulating layer and electrically connected to the second electrode, wherein the first semiconductor layer surrounds the active layer and the second semiconductor layer on a plane, and the active layer and the second semiconductor layer. And an exposed portion formed to form an outer edge, wherein at least one of the first pad electrode and the second pad electrode is exposed to expose the insulating layer, and the outer and exposed portions are formed to overlap at least a portion on a plane. do.

This is described later in the section titled 'Details of the Invention.'

1 is a view showing an example of a conventional semiconductor light emitting device;
2 is a view showing another example of the semiconductor light emitting device shown in US Patent No. 7,262,436;
3 is a view showing another example of a semiconductor light emitting device disclosed in Korean Laid-Open Patent Publication No. 2015-0055390;
4 is a view illustrating an example of a semiconductor light emitting device disclosed in Korean Laid-Open Patent Publication No. 2014-0073160;
5 is a diagram illustrating an example of a semiconductor light emitting device according to the present disclosure;
6 is a view showing another example of a semiconductor light emitting device according to the present disclosure;
7 is a view showing another example of a semiconductor light emitting device according to the present disclosure;
8 is a view showing another example of a semiconductor light emitting device according to the present disclosure;
9 is a view showing another example of a semiconductor light emitting device according to the present disclosure;
10 is a view showing another example of a semiconductor light emitting device according to the present disclosure;
11 is a view showing another example of a semiconductor light emitting device according to the present disclosure.

The present disclosure will now be described in detail with reference to the accompanying drawing (s).

5 is a diagram illustrating an example of a semiconductor light emitting device according to the present disclosure.

5A is a perspective view of the semiconductor light emitting device 100, FIG. 5B is a plan view, and FIG. 5C is a side view.

The semiconductor light emitting device 100 includes a substrate 110, a first semiconductor layer 130, an active layer 140, a second semiconductor layer 150, a first electrode 180, and a second electrode 170. The substrate 110 is mainly sapphire, SiC, Si, GaN and the like, and finally the substrate 110 can be removed. The substrate 110 may be formed of a light transmissive material. The first semiconductor layer 130 may be formed on the substrate 110. A buffer layer 120 may be formed between the substrate 110 and the first semiconductor layer 130.

The first semiconductor layer 130 (eg, the n-type semiconductor layer) has a first conductivity. The active layer 140 is provided on the first semiconductor layer 130, and ultraviolet rays are emitted through recombination of electrons and holes in the active layer 140. The second semiconductor layer 150 (eg, the p-type semiconductor layer) is provided on the active layer 140, and the second semiconductor layer 150 has a second conductivity different from the first conductivity.

The first electrode 180 is formed on the first semiconductor layer 130 and is electrically connected to the first semiconductor layer 130. The second electrode 170 is formed on the second semiconductor layer 150 and is electrically connected to the second semiconductor layer 150.

The first semiconductor layer 130, the active layer 140, and the second semiconductor layer 150 may be based on an aluminum gallium nitride (AlGaN) material so that the semiconductor light emitting device 100 may emit ultraviolet rays. In particular, it can emit ultraviolet light having a short wavelength of less than 300nm (for example, UV-C in the wavelength range of 200nm to 280nm).

As shown in FIG. 5B, the first semiconductor layer 130 is formed to surround the active layer 140 and the second semiconductor layer 150 in plan view.

The active layer 140 and the second semiconductor layer 150 at the edge of the semiconductor light emitting device 100 are etched to expose the first semiconductor layer 130 widely. As the current diffuses along the exposed surface of the first semiconductor layer 130, the current may be transferred to the opposite side where the second electrode 170 is formed.

In addition, the ultraviolet light emitted from the active layer 140 passes through most of the first semiconductor layer 130 and the substrate 110, but is mostly absorbed by the second semiconductor layer 150, thereby increasing the temperature of the semiconductor light emitting device 100. There is this. The temperature rise may be limited by partially removing the second semiconductor layer 150.

If the first electrode 180 formed on the first semiconductor layer 130 is formed wide on the first semiconductor layer 130, there is an advantage in current diffusion. However, since the first electrode 180 absorbs ultraviolet rays, the first electrode 180 is preferably formed of dots. In addition, since the second electrode 170 formed of the same material may absorb ultraviolet rays, the second electrode 170 may be formed of dots.

The boundary between the active layer 140 and the second semiconductor layer 150 and the first semiconductor layer 130 on the plane is called the outer 302 of the active layer 140 and the second semiconductor layer 150, and At least one of the intersections 304 is formed of an unrounded round intersection 304. The rounded intersection 304 may have a radius of curvature 303, and the radius of curvature 303 may have a value between 15 μm and 50 μm. Problems when the outer 302 is formed with a hairy intersection 304 (see FIG. 6 (a)) will be described in detail in FIG. 6.

The second semiconductor layer 150 emits ultraviolet light by emitting the active layer 140 to a distance 308 that is constantly separated from the outer portion 302, and at least a distance that does not come out of the active layer 140 when the distance is 308. One or more regions 305 are formed. The cause is explained in FIG. Although the region 305 that does not emit ultraviolet rays is represented on the second semiconductor layer 150 in the drawing, the second semiconductor layer 150 may not appear in the second semiconductor layer 150 because the second semiconductor layer 150 absorbs ultraviolet rays. The region 305 in which the ultraviolet rays do not come out can be seen from the first semiconductor layer 130 side or the substrate 110 side from which the ultraviolet rays are emitted, which is expressed on the second semiconductor layer 150 side.

A plurality of at least one region 305 is provided, and the passage 301 having a width 307 narrower than the minimum width 306 of the outline 302 passing through the plurality of regions 305 between the plurality of regions 305. Can be formed.

For example, the plurality of regions 305 may include a first region 315, a second region 316, and a third region 317. A passage 301 is provided between the first region 315 and the second region 316, and a passage 301 is formed between the second region 316 and the third region 317. As the passage 301 is formed, the region 305 where ultraviolet rays do not come out is reduced.

The plurality of regions 305 may be formed where the maximum width 313 of the outer portion 302 is formed.

6 illustrates another example of the semiconductor light emitting device according to the present disclosure.

6A illustrates an example in which a hair is formed at the intersection 304 of the outer 302. When the hair is formed at the intersection 304, a phenomenon in which current gathers at the intersection 304 causes damage to the semiconductor layer on which the intersection 304 is formed.

As shown in FIG. 6 (b), it is preferable to form the intersection 304 in a round shape so that no hair is formed in the outer 302. Since no hair is formed in the outer 302, the problem of damaging the semiconductor layer is alleviated.

However, the current is uniformly spread up to a distance 308 that is constant away from the outer 302, and a region 305 that does not emit ultraviolet rays is formed at a portion away from the outer 302 because the current does not spread beyond that. .

7 is a view showing another example of a semiconductor light emitting device according to the present disclosure.

Between the plurality of regions 305 to be narrower than the minimum width 306 of the plurality of regions 305 to increase the size of the active layer 140 (see FIG. 5) while reducing the size of the region 305 that does not emit ultraviolet light. A passage 301 is formed. The width 307 of the passage 301 is preferably formed to be less than twice the distance 308 from the outer region 302 to the region 305 where ultraviolet light is emitted.

Since light is emitted in all directions, when the region 305 is made small, the region 305 may be covered by the light.

8 is a view showing another example of a semiconductor light emitting device according to the present disclosure.

It was formed in a circular shape so that no hair is formed at the intersection 304 (see FIG. 6) of the outer 302. However, when formed in a circular shape, even though the semiconductor light emitting device 100 is formed as large as possible in the width direction, many active layers 140 (see FIG. 5) are removed in the length direction, and thus the desired light emission efficiency does not come out. The structure which solved this is shown in FIG.

At least one of the first electrode 180 and the second electrode 170 may be formed so that the extension line 309 formed in the longitudinal direction of the semiconductor light emitting device 100 does not overlap the outer edge 302. For example, when at least one of the electrons and holes coming out of the first electrode 180 meets the outer portion 302, it does not spread to the entire surface of the exposed first semiconductor layer 130 and moves to the second electrode 170 to move to the active layer. This is because only part 140 may be activated.

9 is a view showing another example of a semiconductor light emitting device according to the present disclosure.

While the outer 302 of the semiconductor light emitting device 100 of FIG. 8 is extended in the longitudinal direction to have an active layer 140 (see FIG. 5) wider than that of FIG. 8, the outer 302 is elliptical so that no hair is formed in the outer 302. Formed. Since the size of the active layer 140 of FIG. 9 is larger than that of FIG. 8, the total amount of ultraviolet rays increases. However, as the size of the active layer 140 increases, the region 305 that does not emit ultraviolet rays in the center of the ellipse also increases.

10 illustrates another example of the semiconductor light emitting device according to the present disclosure.

10 is a sectional view of the semiconductor light emitting device 100.

The semiconductor light emitting device 100 further includes an insulating layer 160, a first pad electrode 210, and a second pad electrode 220.

The insulating layer 160 is formed on the first semiconductor layer 130, the second semiconductor layer 150, and the active layer 140, and the insulating layer 160 is translucent and is formed of a non-conductive material. For example, the insulating layer 160 may be formed of SiO 2.

It is formed on the insulating layer 160 of the first pad electrode 210 and the second pad electrode 220, at least a portion of the first pad electrode 210 is electrically connected to the first electrode 180. At least a portion of the second pad electrode 220 is electrically connected to the second electrode 170.

The first pad electrode 210 and the second pad electrode 220 are formed to stably contact when in contact with an external power source. The wide width of the first pad electrode 210 and the second pad electrode 220 helps to stably contact the external power source.

The first pad electrode 210 and the second pad electrode 220 cover the insulating layer 160. However, since ultraviolet rays have a short wavelength, most of the ultraviolet rays are absorbed by the first pad electrode 210 and the second pad electrode 220.

The outer 302 may be formed at 90 degrees with the first semiconductor layer 130. In this case, the active layer 140 has a side surface, and ultraviolet rays emitted from the side surface of the active layer 140 are directed to the side surface of the semiconductor light emitting device 100. Will go out.

11 is a view showing another example of a semiconductor light emitting device according to the present disclosure.

In order to solve the problem illustrated in FIG. 10, at least one of the first pad electrode 210 and the second pad electrode 220 includes an exposed part 230 formed to expose the insulating layer 160. The outer 302 may be formed to overlap the exposed portion 230. The exposed portion 230 may be positioned to overlap at least a portion with the active layer 140 on a plane. An exposed portion 230 may be provided along the side surface of the active layer 140 on a plane. This is described in detail in FIG. 12.

The angle 310 between the exposed top surface of the first semiconductor layer 130 and the side surface of the active layer 140 to allow the ultraviolet light emitted from the side surface of the active layer 140 to exit to the side surface of the semiconductor light emitting device 100 to the front. May be formed to more than 90 degrees. When the 310 between the upper surface of the first semiconductor layer 130 and the side surface of the active layer 140 is formed at 90 degrees or more, since the active layer 140 may be formed more than 90 degrees, the active layer 140 exits from the active layer 140. The amount of light can be increased. In addition, more light can be emitted to the second semiconductor layer 150 side.

When the angle 310 between the exposed upper surface of the first semiconductor layer 130 and the side surface of the active layer 140 is formed to be 90 degrees or more, the outer surface 302 is formed on the first outer surface 311 and the second outer surface 312. Have). The boundary between the active layer 140, the second semiconductor layer 150, and the first semiconductor layer 130 on the plane is referred to as the outer 302 of the active layer 140 and the second semiconductor layer 150. When the active layer 140 is formed at 90 degrees or more, the outer 302 includes a first outer 311 and a second outer 312. The first outer edge 311 is a boundary between an upper surface of the second semiconductor layer 150 and the active layer 140, and the second outer edge 312 is a first semiconductor layer (not etched with the upper surface of the first semiconductor layer 130). 130 or at least one boundary of the active layer 140. On the plane, the first outer portion 311 and the second outer portion 312 may be positioned to overlap at least a portion of the exposed portion 230. An active layer 140 is provided between the first outer 311 and the second outer 312. In an exemplary embodiment, the active layer 140 may be formed to overlap at least a portion of the exposed portion 230.

Since the angle 310 of the upper surface of the first semiconductor layer 130 and the side surface of the active layer 140 is formed to be 90 degrees or more, the area of the upper surface of the second semiconductor layer 150 may be smaller than the area of the active layer 140. Can be.

The first pad electrode 210 is separated into the first external electrode 213 and the first internal electrode 211 by the exposed part 230, and the second pad electrode 220 is formed by the exposed part 230. The second external electrode 223 and the second internal electrode 221 are separated. The first external electrode 213 is electrically connected to the first electrode 180, and the first internal electrode 211 is not electrically connected. The second external electrode 223 is not electrically connected, and the second internal electrode 221 is electrically connected to the second electrode 170.

When the first internal electrode 211 and the second external electrode 223 which are not electrically connected to each other, the first internal electrode 211 and the second external electrode 223 structurally serve as an auxiliary bonding function to increase the bonding force, and at the same time, the first internal electrode 211 and the first external electrode 211 The second external electrode 223 may be formed to match the height of the first external electrode 213 and the second internal electrode 221. If the height does not match, the semiconductor light emitting device 100 may be tilted and mounted when the semiconductor light emitting device 100 is mounted.

12 is a view for explaining that light is emitted to the exposed portion of the semiconductor light emitting device according to the present disclosure.

Part of the ultraviolet light L absorbed by the second pad electrode 220 may not be absorbed by the second pad electrode 220 through the exposed portion 230, and thus may exit the semiconductor light emitting device 100 to increase light output efficiency. have. That is, since the ultraviolet light L emitted through the exposed part 230 may be reflected by an external substrate (not shown) on which the semiconductor light emitting device 100 is mounted, the ultraviolet light L may exit toward the substrate 110 of the semiconductor light emitting device 100. . Although the first pad electrode 210 is not represented in the drawing, the contents of FIG. 12 may be applied to the first pad electrode 210.

The light emitting efficiency of the semiconductor light emitting device 100 of FIG. 11 is higher than that of the semiconductor light emitting device 100 of FIG. 10.

Hereinafter, various embodiments of the present disclosure will be described.

(1) A semiconductor light emitting device comprising: a substrate; A first semiconductor layer provided on the substrate and having a first conductivity; A semiconductor light emitting device comprising: a substrate; A first semiconductor layer provided on the substrate and having a first conductivity; An active layer provided on the first semiconductor layer and generating ultraviolet rays through recombination of electrons and holes; A second semiconductor layer provided on the active layer and having a second conductivity different from the first conductivity; A first electrode electrically connected to the first semiconductor layer; A second electrode electrically connected to the second semiconductor layer; An insulating layer formed on the first semiconductor layer, the second semiconductor layer, and the active layer; A first pad electrode formed on the insulating layer and electrically connected to the first electrode; And a second pad electrode formed on the insulating layer and electrically connected to the second electrode, wherein the first semiconductor layer surrounds the active layer and the second semiconductor layer on a plane, and the active layer and the second semiconductor layer. And an outer portion, wherein at least one of the first pad electrode and the second pad electrode is exposed to form an insulating layer, and the outer and exposed portions are formed to overlap at least a portion on a plane. An active layer provided on the first semiconductor layer and generating ultraviolet rays through recombination of electrons and holes; A second semiconductor layer provided on the active layer and having a second conductivity different from the first conductivity; A first electrode electrically connected to the first semiconductor layer; A second electrode electrically connected to the second semiconductor layer; An insulating layer formed on the first semiconductor layer, the second semiconductor layer, and the active layer; A first pad electrode formed on the insulating layer and electrically connected to the first electrode; And a second pad electrode formed on the insulating layer and electrically connected to the second electrode, wherein the first semiconductor layer surrounds the active layer and the second semiconductor layer on a plane, and the active layer and the second semiconductor layer. And an outer portion, wherein at least one of the first pad electrode and the second pad electrode is exposed to form an insulating layer, and the outer and exposed portions are formed to overlap at least a portion on a plane.

(2) A semiconductor light emitting element in which at least a portion of the active layer and the exposed portion exposed on a plane are overlapped.

(3) The semiconductor light emitting device having an active layer has a side surface, and an inclination between the top surface of the first semiconductor layer and the side surface of the active layer is formed to be 90 degrees or more.

(4) The outer side includes a first outer side and a second outer side, and a semiconductor light emitting device positioned between at least a portion of the exposed portion between the first outer side and the second outer side on a plane.

(5) The exposed part is formed on the first pad electrode and the second pad electrode, the first pad electrode is separated into the first external electrode and the first internal electrode by the exposed part, and the second pad electrode is second by the exposed part. A semiconductor light emitting device separated into an external electrode and a second internal electrode.

(6) A semiconductor light emitting device, wherein the first external electrode is electrically connected to the first electrode, and the second internal electrode is electrically connected to the second electrode.

(7) A semiconductor light emitting element having an area of the upper surface of the second semiconductor layer smaller than that of the upper surface of the active layer.

(8) an active layer and a second semiconductor layer forming an outline, and at least one or more regions where ultraviolet rays do not come out of the active layer at a distance from the outside;

(9) A plurality of at least one region is provided, a passage having a narrower width than the minimum width passing through the region between the plurality of regions; semiconductor light emitting device comprising a.

(10) a distance from the outside to the plurality of regions; and the width of the passage is formed smaller than twice the distance.

According to one semiconductor light emitting element according to the present disclosure, the light emitting efficiency of ultraviolet rays is increased by the exposed portion.

According to one semiconductor light emitting device according to the present disclosure, a region in which ultraviolet light does not emit by the passage is reduced.

According to another semiconductor light emitting device according to the present disclosure, it is possible to have a structure to reduce damage to the semiconductor layer.

Reference Numerals 110: substrate 20: buffer layer 130: first semiconductor layer 140: active layer
150: second semiconductor layer 170: second electrode 180: first electrode

Claims (10)

In a semiconductor light emitting device,
Board;
A first semiconductor layer provided on the substrate and having a first conductivity;
An active layer provided on the first semiconductor layer and generating ultraviolet rays through recombination of electrons and holes;
A second semiconductor layer provided on the active layer and having a second conductivity different from the first conductivity;
A first electrode electrically connected to the first semiconductor layer;
A second electrode electrically connected to the second semiconductor layer;
An insulating layer formed on the first semiconductor layer, the second semiconductor layer, and the active layer;
A first pad electrode formed on the insulating layer and electrically connected to the first electrode; And,
A second pad electrode formed on the insulating layer and electrically connected to the second electrode;
The first semiconductor layer surrounds the active layer and the second semiconductor layer on a plane,
The active layer and the second semiconductor layer form an outline,
At least one of the first pad electrode and the second pad electrode includes an exposed part formed to expose the insulating layer;
On the plane, the outer and exposed portions are formed to overlap at least a portion,
The first electrode and the second electrode is located outside the outer side, the second electrode is a semiconductor light emitting element located inside the outer side. The method according to claim 1,
The semiconductor light emitting device is formed so that at least a portion of the active layer and the exposed portion exposed on the plane overlap. The method according to claim 1,
Active layer has sides,
The inclination between the upper surface of the first semiconductor layer and the side surface of the active layer is formed to more than 90 degrees. The method according to claim 3,
The outskirt includes a first outskirt and a second outskirt,
The semiconductor light emitting device of claim 1, wherein at least a portion of the exposed portion overlaps the first outer portion and the second outer portion on the plane. The method according to claim 1,
The exposed part is formed on the first pad electrode and the second pad electrode,
The first pad electrode is separated into a first external electrode and a first internal electrode by an exposed part,
The second pad electrode is separated into a second external electrode and a second internal electrode by the exposed part. The method according to claim 5,
The first external electrode is electrically connected to the first electrode, the second internal electrode is electrically connected to the second electrode. The method according to claim 1,
The area of the upper surface of the second semiconductor layer is smaller than the area of the upper surface of the active layer. The method according to claim 1,
The active layer and the second semiconductor layer form an outline,
At least one region where ultraviolet rays do not come out of the active layer at a distance from the outside. The method according to claim 8,
At least one or more areas are provided in plurality,
And a passage having a width narrower than the minimum width passing through the region between the plurality of regions. The method according to claim 9,
A distance from the outside to the plurality of regions;
The width of the passage is formed less than twice the distance of the semiconductor light emitting device.

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