KR102051660B1 - Organic light emitting device, method of fabricating the same and organic light emitting display - Google Patents

Abstract

The present invention provides an organic electroluminescent device, comprising: a first lower electrode having a multilayer conductive layer formed on a substrate, a first organic light emitting layer formed on the first lower electrode, and a first organic light emitting layer formed on the first organic light emitting layer At least one first pixel region including a first upper electrode; And a second lower electrode formed on the substrate at a distance from the first lower electrode, the second organic light emitting layer integrally formed with the first organic light emitting layer formed on the second lower electrode, and the second lower electrode. At least one second pixel region comprising a second upper electrode formed on the organic light emitting layer and integrally formed with the first upper electrode, and an upper reflective electrode formed on the second upper electrode and covering at least the second emitting layer Provided are an organic light emitting display device, a method of manufacturing the same, and an organic light emitting display device.

Description

Organic electroluminescent device, manufacturing method and organic electroluminescent display device {ORGANIC LIGHT EMITTING DEVICE, METHOD OF FABRICATING THE SAME AND ORGANIC LIGHT EMITTING DISPLAY}

The present invention relates to an organic light emitting display device, a method of manufacturing the same, and an organic light emitting display device.

An organic electroluminescent device is a device that emits light by using an electroluminescent phenomenon in which an organic compound located between electrodes emits light when a current flows between both electrodes. An organic light emitting display device is one that displays an image by controlling the amount of light emitted by controlling the amount of current flowing through the organic compound.

The organic light emitting display device has an advantage that it is possible to reduce the weight and thickness of the organic light emitting display device because it emits light with a thin organic compound between the electrodes.

On the other hand, the anode of the light emitting device capable of emitting both sides is formed of a transparent electrode such as ITO. In addition, the cathode electrode may be formed by depositing a metal or the like very thinly, preferably within 100 GPa, or may form a transparent electrode such as ITO as an auxiliary electrode on the cathode electrode.

However, since the conventional double-sided light emitting device implements double-sided light emission using one light emitting layer and transparent electrodes on both sides of the light emitting layer, an image opposite to an image displayed on one screen is displayed on the other side. For example, if the user wants to display R on the upper screen, the lower side cannot be used as a normal screen because Я, the inverse of R, is displayed on the lower screen, and the upper side is also difficult to accurately display the image desired by the user. There is a problem in that the opposite side light is introduced to deteriorate the image quality.

In this background, an object of the present invention, in one aspect, the organic light emitting device, including the upper and lower light emitting regions in the organic light emitting device, the simultaneous implementation of the upper and lower light emitting devices, a method for manufacturing the same and organic electroluminescent It is to provide a technology related to a display device.

In another aspect, an object of the present invention is to provide an organic light emitting display device having improved contrast and visibility, a method of manufacturing the same, and a technology related to an organic light emitting display device.

In another aspect, an object of the present invention is to provide an organic light emitting display device, a method of manufacturing the same, and an organic light emitting display device capable of simultaneously displaying the same image or two images that are not inverted.

In order to achieve the above object, in one aspect, the present invention is an organic electroluminescent device, the first lower electrode of a multilayer structure having a reflective conductive layer formed on a substrate, and the first lower electrode formed on the first lower electrode At least one first pixel region including an organic light emitting layer and a first upper electrode formed on the first organic light emitting layer; And a second lower electrode formed on the substrate at a distance from the first lower electrode, the second organic light emitting layer integrally formed with the first organic light emitting layer formed on the second lower electrode, and the second lower electrode. At least one second pixel region comprising a second upper electrode formed on the organic light emitting layer and integrally formed with the first upper electrode, and an upper reflective electrode formed on the second upper electrode and covering at least the second emitting layer It provides an organic electroluminescent device comprising a.

In another aspect, the present invention is a method of manufacturing an organic light emitting display device, the first lower electrode of a multi-layer structure having a reflective conductive layer located on the substrate and the first lower electrode spaced apart from the first lower electrode Forming a second lower electrode having a single layer structure disposed on the same layer as the electrode; Forming a first organic light emitting layer on the first upper electrode and a second organic light emitting layer on the second upper electrode and integrally with the first organic light emitting layer; Forming a first upper electrode on the first organic light emitting layer and a second upper electrode on the second organic light emitting layer and integrally with the first upper electrode; Forming an upper reflection electrode on the second upper electrode and covering at least a second light emitting layer; And forming a first color filter positioned on the first upper electrode.

In still another aspect, the present invention provides a multi-layered first lower electrode having a reflective conductive layer formed on a substrate, a first organic light emitting layer formed on the first lower electrode, and a first formed on the first organic light emitting layer. At least one first pixel region including one upper electrode; A second lower electrode formed at a distance from the first lower electrode formed on the substrate, the second organic light emitting layer integrally formed with the first organic light emitting layer formed on the second lower electrode, and the second At least one second pixel region comprising a second upper electrode formed on the organic light emitting layer and integrally formed with the first upper electrode, and an upper reflective electrode formed on the second upper electrode and covering at least the second emitting layer ; A first switching transistor transferring a data signal applied to the first data line according to a gate signal applied to the first gate line, a first capacitor storing a voltage corresponding to the transferred data signal, and a voltage stored in the capacitor A first driving circuit including a first driving transistor supplying a current corresponding to the first pixel region; And a second switching transistor transferring a data signal applied to the second data line according to a gate signal applied to the second gate line, a second capacitor storing a voltage corresponding to the transferred data signal, and stored in the capacitor. And a second driving circuit including a second driving transistor for supplying a current corresponding to a voltage to the second pixel region.

As described above, according to the present invention, according to the present invention, there is provided an organic electroluminescent device capable of co-implementing the upper and lower organic light emitting devices, a method of manufacturing the same, and a technology related to the organic light emitting display device. can do.

In another aspect, the present invention can provide an organic light emitting display device having improved contrast and visibility, a method of manufacturing the same, and a technology related to an organic light emitting display device.

In another aspect, according to the present invention, it is possible to provide an organic light emitting display device, a method for manufacturing the same, and an organic light emitting display device capable of simultaneously displaying the same image or two images that are not inverted.

1 is a system configuration diagram of an organic light emitting display device applied to an embodiment.
2 is a schematic cross-sectional view of an organic light emitting display device according to a first embodiment.
3A to 3D are cross-sectional views illustrating a manufacturing process of the organic light emitting display device according to the first embodiment.
4 is a schematic cross-sectional view of an organic light emitting display device according to a second embodiment.
5A to 5C are cross-sectional views illustrating a manufacturing process of an organic light emitting display device according to a second embodiment.
6 is a schematic circuit diagram of an organic light emitting display device according to the system configuration of FIG. 1.
7 is a system configuration diagram of an organic light emitting display device applied to another embodiment.
FIG. 8 is a schematic circuit diagram of an organic light emitting display device according to the system configuration of FIG. 7.

Hereinafter, some embodiments of the present invention will be described in detail through exemplary drawings. In adding reference numerals to the components of each drawing, it should be noted that the same reference numerals are assigned to the same components as much as possible even though they are shown in different drawings. In addition, in describing the embodiments of the present invention, if it is determined that the detailed description of the related known configuration or function may obscure the gist of the present invention, the detailed description thereof will be omitted.

In addition, in explaining the component of this invention, terms, such as 1st, 2nd, A, B, (a), (b), can be used. These terms are only for distinguishing the components from other components, and the nature, order or order of the components are not limited by the terms. If a component is described as being "connected", "coupled" or "connected" to another component, that component may be directly connected to or connected to that other component, but there may be another configuration between each component. It is to be understood that the elements may be "connected", "coupled" or "connected". In the same context, where a component is described as being formed "on" or "under" another component, that component is both formed directly on the other component or indirectly through another component. It should be understood to include.

1 is a system configuration diagram of an organic light emitting display device according to an embodiment of the present invention.

Referring to FIG. 1, an organic light emitting display device 100 according to an embodiment of the present invention may include a timing controller 110, a data driver 120, a gate driver 130, and a display panel 140. have.

The timing controller 110 controls the data driver 120 based on external timing signals such as the vertical / horizontal synchronization signals Vsync and Hsync, the image signal RGB, and the clock signal CLK input from the host system 150. The data control signal DCS for controlling and the gate control signal GCS for controlling the gate driver 130 are output. In addition, the timing controller 110 converts the image signal RGB input from the host system 150 into a data signal format used by the data driver 120 to convert the image signal R'G'B 'to the data driver. 120). For example, the timing controller 110 may supply the converted image signal R'G'B 'to the data driver 120 in accordance with the resolution or pixel structure of the display panel 140. The video signal RGB and the converted video signal R'G'B 'may also be referred to as video digital data, video data, or data.

The data driver 120 converts the converted image signal R'G'B 'in response to the data control signal DCS and the converted image signal R'G'B' input from the timing controller 110. The data signal is converted into a data signal (analog pixel signal or data voltage) that is a voltage value corresponding to the gray scale value and supplied to the data line.

The gate driver 130 sequentially supplies a scan signal (a gate pulse, a scan pulse, or a gate on signal) to the gate line in response to the gate control signal GCS input from the timing controller 110.

The display pattern 140 includes a pixel area P including a first pixel area PT and a second pixel area PB. Pixels are formed in the first pixel region PT and the second pixel region PB where the gate lines GLy ^T and GLy ^B intersect with one data line DLx.

Each pixel includes at least one organic light emitting diode (OLED) including an anode as a first electrode, a cathode as a second electrode, and a light emitting layer. The light emitting layer included in each organic light emitting diode may include at least one light emitting layer or a white light emitting layer among red, green, blue, and white light emitting layers. Each pixel is provided with a gate line GLy and a data line DLx. In addition, each pixel includes a switching transistor formed between the gate line GLy and the data line DLx, and a driving transistor between the source electrode or the drain electrode of the switching transistor, the high potential voltage line VDD, and the organic light emitting diode. Includes a driving circuit (to be described later with reference to FIG. 6).

Each pixel described above may be an organic light emitting display device according to the first and second embodiments to be described later, and may be an organic light emitting display device that can be manufactured by a method of manufacturing the same.

First Embodiment

2 is a schematic cross-sectional view of an organic light emitting display device according to a first embodiment.

Referring to FIG. 2, the organic light emitting display device 200 according to an exemplary embodiment of the present invention includes a substrate 205 in which a first pixel region PT and a second pixel region PB are defined. In this case, the substrate 205 may be a transparent substrate, and may be glass, plastic, or the like.

The first pixel area PT is an upper emission area, and the second pixel area PB is a lower emission area.

On the substrate 205, the gate electrodes 210 and 215, the gate insulating layer 220, the semiconductor layers 230 and 235, and the source / drain electrodes 250 and 255 are sequentially disposed in the first pixel region PT and the second pixel region PB, respectively. It is formed.

At this time, the etch stoppers 240 and 245 are positioned at positions corresponding to the gate electrodes 210 and 215 on the semiconductor layers 230 and 235, respectively.

Source / drain electrodes 250 and 255 are positioned on each semiconductor layer 230 and 235.

Each of the source / drain electrodes 250 and 255 is formed by separating the source electrodes 250b and 255b and the drain electrodes 250a and 255a with the etch stoppers 240 and 245 therebetween. The etch stoppers 240 and 245 protect the damage of the semiconductor layers 230 and 235 when the source / drain electrodes 250 and 255 are patterned.

The semiconductor layers 230 and 235 may be formed of polycrystalline silicon, an oxide semiconductor layer, single crystal silicon, an organic semiconductor layer, or the like. Specifically, the oxide semiconductor layer may be indium gallium zinc oxide (IGZO), zinc tin oxide (ZTO), zinc indium oxide (ZIO), or the like.

Accordingly, the thin film transistors including the semiconductor layers 230 and 235, the gate electrodes 210 and 215, and the source / drain electrodes 250 and 255 are formed in the first and second pixel regions PT and PB as described above. . In this case, since the second pixel area PB is a lower emission area, a thin film transistor is not disposed under the second lower electrode 285 to further increase efficiency of lower emission.

The first pixel region PT includes a first lower electrode 280 having a multi-layered reflective conductive layer formed on a substrate, a first organic light emitting layer 292a formed on the first lower electrode 280, and a first The first upper electrode 294a formed on the organic light emitting layer 292a and the first color filter 297 formed on the first upper electrode 294a are included. Each of the first lower electrode 280 and the first upper electrode 294a may be an anode electrode and a cathode electrode, or vice versa.

The first lower electrode 280 has a multilayer structure in which a first conductive film 280a, a second conductive film 280b, and a third conductive film 280c are sequentially formed. In this case, each of the first conductive film 280a, the second conductive film 280b, and the third conductive film 280c may be a single layer or a multilayer.

The first lower electrode 280 is electrically connected to the source / drain electrode 250 positioned in the first pixel region PT through the via holes V1 formed in the first and second passivation layers 260 and 270.

Here, the first and third conductive films 280a and 280c are made of a transparent conductive metal oxide, and serve to improve adhesion between the reflective conductive layer and the substrate 205. For example, the first and third conductive films 280a and 280c include indium tin oxide (ITO), indium zinc oxide (IZO), and the like.

The second conductive film 280b is a single layer composed of the reflective conductive layer 280b. For example, the second conductive film 280b includes aluminum, an alloy mainly composed of silver, and the like.

The bank 290 is formed at the edge portion of the first lower electrode 280. In this case, the bank 290 has an opening G1 exposing the first lower electrode 280. In this case, the exposed first lower electrode 280 may be displayed as the first emission area EA1.

The first organic light emitting layer 292a is formed on the exposed first lower electrode 280. The first organic light emitting layer 292a may be a white organic light emitting layer. The white organic light emitting layer may be a light emitting layer including red, green, and blue light emitting materials, or a light emitting layer including blue and green yellow light emitting materials.

The first upper electrode 294a is formed on the first organic light emitting layer 292a.

One color filter 297 is formed on the first upper electrode 294a.

The first color filter 297 is formed to correspond to the first lower electrode 280 to cover all of the first emission regions EA1 of the first lower electrode 280.

The first organic light emitting layer 292a emits light by recombining electrons and holes supplied from the first lower electrode 280 and the first upper electrode 297 to form excitons. Light emitted from the first organic light emitting layer 292a is emitted toward the top of the substrate 205 through the first upper electrode 294a and the first color filter 297.

The second pixel region PB includes a second color filter 265 formed on the substrate 205, a second lower electrode 285 formed on the second color filter 265, and a second lower electrode 285. A second organic light emitting layer 292b formed on the second organic light emitting layer 292b and a second upper electrode 294b formed integrally with the first upper electrode 294a.

The second lower electrode 285 has a single layer structure formed of one conductive film. In this case, the second lower electrode 285 has a single layer structure, in which the first lower electrode 280a, the second conductive layer 280b, and the third conductive layer 280c are sequentially formed. For example, the second lower electrode 285 may be formed in a multilayered manner, as the first conductive layer 280a formed on the first lower electrode 280 may be formed in a multilayered manner.

The second lower electrode 285 is electrically connected to the source / drain electrode 255 positioned in the second pixel region PB through the via holes V2 formed in the first and second passivation layers 260 and 270.

Here, the second lower electrode 285 may be made of a transparent conductive metal oxide. For example, the second lower electrode 285 includes indium tin oxide (ITO), indium zinc oxide (IZO), or the like.

The bank 290 is formed at the edge portion of the second lower electrode 285. In this case, the bank 290 has an opening G2 exposing the second lower electrode 280. In this case, the exposed second lower electrode 285 may be displayed as the second emission area EA2.

In addition, a bank 290 may be located between the first lower electrode 280 and the second lower electrode 285, and an area in which the bank 290 is located may be referred to as a non-light emitting area NE.

On the second upper electrode 294b may include an upper reflection electrode 296 covering at least the second organic light emitting layer 292b, but is not limited thereto. In this case, the upper reflection electrode 296 may include a metal having high reflectance, for example, silver, aluminum, silver alloy, aluminum alloy, or the like. The upper reflection electrode 296 serves to prevent the light from leaking upward by increasing the reflectance of the light, and also reduces the resistance of the second upper electrode 294b.

The light emitted from the second organic light emitting layer 292b is reflected by the upper reflection electrode 296 and passed through the second lower electrode 285 and the second color filter 265 to be emitted downward.

The second color filter 265 is formed in the form of an island structure, and since the light emitted from the second lower electrode 285 must pass through, the area of the second color filter 265 is equal to the area of the second lower electrode 285. Is greater than or equal to the second emission area EA2.

The first lower electrode 280 is formed thicker than the second lower electrode 285. The second lower electrode 285 may be formed to have the same thickness as that of the first conductive layer 280a among the conductive layers constituting the first lower electrode 280, but is not limited thereto.

The second organic light emitting layer 292b is integrally formed with the first organic light emitting layer 292a.

In the present embodiment, the first upper electrode 294a and the second upper electrode 294b are formed as a single layer and used as a common electrode. Although the second upper electrode 294b and the first upper electrode 294a may be formed separately, in the present invention, a single layer may be simultaneously formed on each of the organic light emitting layers 292a and 292b and used as a common electrode.

The organic light emitting display device according to the present invention includes an upper light emitting device and a lower light emitting device at the same time, and each can be driven independently. For example, when the user wants to display R on the top or bottom, the R can be displayed accurately in any area on the light emitting device on the desired light emitting surface side. Do not. In addition, the contrast and visibility of the device are also improved.

Not shown hole injection to improve injection characteristics of electrons and holes between the first lower electrode 280 and the first upper electrode 294a and between the second lower electrode 285 and the second upper electrode 294b. It may include at least some layers of the layer, the hole transport layer, the electron transport layer and the electron injection layer.

Hereinafter, a method of manufacturing the organic light emitting display device 200 according to the first embodiment will be described in more detail with reference to FIGS. 3A to 3D.

3A to 3D are cross-sectional views illustrating a manufacturing process of the organic light emitting display device according to the first embodiment.

First, referring to FIG. 3A, a substrate 205 on which a first pixel region PT and a second pixel region PB are defined is prepared. In this case, the substrate 205 may be a transparent substrate, and glass, plastic, or the like may be used.

Thereafter, the gate electrodes 210 and 215 are formed in the first pixel region PT and the second pixel region PB. Thereafter, the gate insulating film 220 is formed on the entire surface of the substrate 205 on which the gate electrodes 210 and 215 are formed.

Next, the semiconductor layers 230 and 235 are formed to correspond to the upper portions of the gate electrodes 210 and 215, respectively. In this case, the semiconductor layers 230 and 235 may be formed of a kind of polycrystalline silicon, an oxide semiconductor layer, a single crystal silicon, an organic semiconductor layer, or the like. Specifically, the oxide semiconductor layer may be indium gallium zinc oxide (IGZO), zinc tin oxide (ZTO), zinc indium oxide (ZIO), or the like.

Then, the etch stoppers 240 and 245 are formed on the semiconductor layers 230 and 235 in the portions corresponding to the gate electrodes 210 and 215.

Thereafter, n-type ions or p-type ions are implanted into the exposed semiconductor layers 230 and 235 using the etch stoppers 240 and 245 as masks, so that the semiconductor layers 230 and 235 have source / drain regions. In this case, portions covered by the etch stoppers 240 and 245 of the semiconductor layers 230 and 235 are not ion implanted, and portions corresponding to the gate electrodes 210 and 215 become channel regions.

Then, source / drain electrodes 250 and 255 are formed on the semiconductor layers 230 and 235 to be spaced apart from each other with the etch stoppers 240 and 245 therebetween.

 Since the semiconductor layers 230 and 235 are covered by the etch stoppers 240 and 245, the semiconductor layers 230 and 235 may not be damaged in the etching process of the source / drain electrodes.

In the organic light emitting diode according to the first exemplary embodiment, the bottom gate thin film transistor in which the gate electrodes 210 and 215 are disposed under the semiconductor layers 230 and 235 is described as an example, but the present invention is not limited thereto. The organic light emitting diode according to the first exemplary embodiment may be a top gate thin film transistor in which a gate electrode is positioned on the semiconductor layers 230 and 235. When the gate electrodes 210 and 215 are positioned on the semiconductor layers 230 and 235, the order of the semiconductor layers 230 and 235, the gate insulating layer 220, the gate electrodes 210 and 215, the interlayer insulating layer (not shown), and the source / drain electrodes 250 and 255 are shown. The gate electrodes 210 and 215 are insulated from the semiconductor layers 230 and 235 and the source / drain electrodes 250 and 255.

Thereafter, the first passivation layer 260 is formed on the entire surface of the substrate 205 on which the source / drain electrodes 250 and 255 are formed. Thereafter, a second color filter 265 is formed on the first passivation layer 260 to correspond to the second emission area EA2. Thereafter, a second passivation layer 270 is formed on the entire surface of the substrate 205 including the second color filter 265. In this case, the first and second passivation layers 260 and 270 may deposit an inorganic insulating material such as silicon oxide (SiO 2) or silicon nitride (SiNx), or an organic insulating material such as benzocyclobutene (BCB) or photo. A photo acryl may be applied or a combination thereof may be formed.

 Thereafter, after the first and second passivation layers 260 and 270 are formed, the via holes V1 and V2 exposing portions of the source / drain electrodes 250 and 255 are formed.

Thereafter, the first conductive film 280a, the second conductive film 280b, and the third conductive film 280c are sequentially formed over the entire surface of the substrate 205. In this case, the first conductive film 280a is electrically connected to the source / drain electrodes 250 and 250 through the via holes V1 and V2.

In this case, the first and third conductive films 280a and 280c are formed of a transparent conductive metal oxide, and serve to improve adhesion between the reflective conductive layer and the substrate 205. For example, the first and third conductive films 280a and 280c may be formed of indium tin oxide (ITO), indium zinc oxide (IZO), or the like.

The second conductive film 280b may be formed as a reflective conductive layer. For example, the second conductive film 280b may be formed of aluminum, an alloy mainly composed of silver, an alloy mainly composed of aluminum, or the like.

Thereafter, the first photosensitive film pattern 300a and the second photosensitive film pattern 300b are formed on the third conductive film 280c. In this case, the first photoresist layer pattern 300a is formed at the position of the first emission region EA1, and the second photoresist layer pattern 300b is formed at the second emission region EA2.

 The first photoresist pattern 300a and the second photoresist pattern 300b may have a thickness smaller than that of the first photoresist pattern 300a by a photo process using a halftone mask or a diffraction mask. Form.

More specifically, the first photosensitive film pattern 300a is formed to have the same thickness as the sum of the thicknesses of the first to third conductive films 280a, 280b, and 280c, and the second photosensitive film pattern 300b is the first conductive film 280a. It is formed to the same thickness as).

3B, the first, second, and third conductive films 280a, 280b, and 280c on the substrate 205 are patterned using the first photoresist film pattern 300a and the second photoresist film pattern 300b as masks. Thus, the first lower electrode 280 and the second lower electrode 285 are simultaneously formed.

The second lower electrode 285 is formed on the substrate 205 at a predetermined distance from the first lower electrode 280.

In this case, the first lower electrode 280 has a structure in which the first conductive film 280a, the second conductive film 280b, and the third conductive film 280c are sequentially stacked, and the second lower electrode 285 is formed. ) Is formed in a structure composed of only the first conductive film 280a.

This is because when the first photosensitive pattern 300a having the same thickness as the first to third conductive films 280a, 280b and 280c is etched, the first, second and third conductive films 280a and 280 of the first lower electrode 280 are etched. This is possible because all of the protections 280b and 280c are protected.

In addition, since the second photosensitive pattern 300b is formed to have a thickness of the first conductive layer 280a, the second lower electrode 285 is etched to pattern the second and third conductive layers together with the second photosensitive pattern 300b. Since the films 280b and 280c are etched, the second lower electrode 285 formed of the first conductive film 280a may be formed.

Therefore, after the etching process, the first lower electrode 280 is formed of a structure in which a transparent conductive metal oxide, a reflective conductive layer, and a transparent conductive metal oxide are stacked, and the second lower electrode 285 is formed of a single transparent conductive metal oxide. It can be formed into a layer structure.

Subsequently, referring to FIG. 3C, a bank 290 is formed on the edge portions of the first lower electrode 280 and the second lower electrode 285. In this case, the bank 290 has openings G1 and G2 exposing the first lower electrode 280 and the second lower electrode 285. In addition, the bank 290 is formed in the non-light emitting area NE of the substrate 205 between the first lower electrode 280 and the second lower electrode 285.

The first lower electrode 280 exposed by the bank 290 becomes the first emission area EA1, and the exposed second lower electrode 285 becomes the second emission area EA2.

Thereafter, a first organic light emitting layer 292a is formed on the exposed first lower electrode 280, and a second organic light emitting layer 292b is formed on the exposed second lower electrode 285. . In this case, the first organic light emitting layer 292a and the second organic light emitting layer 292b may be formed of a white organic light emitting layer, and are integrally formed on the entire surface of the substrate 205.

The white organic light emitting layer may be complementary to each other to realize white light emission by using two-component light emission such as red and blue or green yellow and blue, or by using three-component red and blue (RGB) light emission. Accordingly, the first organic light emitting layer 292a and the second organic light emitting layer 292b are white organic light emitting layers including red, green and blue light emitting materials, or white organic light emitting layers including blue and green yellow light emitting materials.

Since the white organic light emitting layer deposits a two-component or three-component organic light emitting layer on the entire surface of the substrate 205, a separate shadow mask for RGB patterning is not required.

Subsequently, a first upper electrode 294a positioned on the first organic light emitting layer 292a and a second upper electrode 294b positioned on the second organic light emitting layer 292b are formed.

In this case, the first upper electrode 294a and the second upper electrode 294b are integrally formed on the entire surface of the substrate 205.

The first upper electrode 294a is an upper electrode corresponding to the first emission area EA1, and the second upper electrode 294b is an upper electrode corresponding to the second emission area EA2.

Then, an upper reflection electrode 296 positioned on the second upper electrode 294b is formed. In this case, the upper reflection electrode 296 may be formed using a metal having high reflectance such as silver, aluminum, silver alloy, aluminum alloy, or the like.

The first organic light emitting layer 292a emits light by recombining electrons and holes supplied from the first lower electrode 280 and the first upper electrode 294a to form excitons, and the light emitted from the first organic light emitting layer 292a. Is emitted toward the upper side of the substrate 205 through the first upper electrode 294a and the first color filter 297.

The second organic light emitting layer 292b emits light while recombining electrons and holes supplied from the second lower electrode 285 and the second upper electrode 294b to form excitons. After the light emitted from the second organic light emitting layer 292b is reflected by the upper reflection electrode 296, the light is emitted toward the bottom of the substrate 205 through the second color filter 265.

Therefore, in order to emit the light emitted from the second organic light emitting layer 292b to the bottom without loss, the upper reflection electrode 296 should be formed to cover the second lower electrode 285.

In addition, the area of the second color filter 265 should be equal to or larger than that of the second lower electrode 285 to reduce the loss of emitted light.

In order to improve injection characteristics of electrons and holes, at least some layers of a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer may be further formed between the upper electrode and the lower electrode.

3D, a first color filter 297 is formed on the first upper electrode 294a corresponding to the opening of the first lower electrode 280 in the first emission region PT. .

In this case, the first organic light emitting layer 292a emits light while electrons and holes are recombined from the first lower electrode 280 and the first upper electrode 297 to form excitons. Light emitted from the first organic light emitting layer 292a is emitted toward the substrate 205 through the second upper electrode 294b and the second color filter 265.

Therefore, in order to minimize the loss of light emitted from the first organic light emitting layer 292a, the first color filter 297 may be larger than the light emitting region of the first lower electrode 280.

Thus, the organic light emitting diode 200 according to the first embodiment of the present invention is completed.

Second Embodiment

4 is a schematic cross-sectional view of an organic light emitting display device according to a second embodiment.

Since the organic light emitting diode 400 according to the second exemplary embodiment is the same as the organic light emitting diode 200 according to the first exemplary embodiment except for the encapsulation substrate 499 including the first color filter 497. The same components as those of the organic light emitting diode 200 according to the first embodiment use the same reference numerals, and redundant descriptions thereof will be omitted.

Referring to FIG. 4, the organic light emitting display device 400 according to the second embodiment is the substrate 205 including the first pixel area PA and the second pixel area PB, similarly to the first embodiment. Each pixel region includes a thin film transistor including the gate electrodes 210 and 215, the semiconductor layers 230 and 235, the etch stoppers 240 and 245, and the source / drain electrodes 250 and 255.

The gate electrodes 210 and 210 and the semiconductor layers 230 and 235 are insulated from the gate insulating layer 220. The first passivation layer 260 is formed on the entire surface of the substrate 205 including the source / drain electrodes 250 and 255. The second color filter 265 is formed in the second pixel region PB on the first passivation layer 260, and the second passivation layer 270 is formed on the entire surface of the substrate 205 including the second color filter 265. Is formed.

The first lower electrode 280 and the second lower electrode 285 connected to the source / drain electrodes 250 and 255 are formed on the second passivation layer 270 through the via holes V1 and V2.

 The first lower electrode 280 is positioned in the first pixel region PT, and the second lower electrode 285 is positioned in the second pixel region PB.

The bank 290 is formed on the first lower electrode 280 and the second lower electrode 285. The bank 290 has an opening G1 exposing the first lower electrode 280 and an opening G2 exposing the second lower electrode 285.

The exposed first lower electrode 280 may be displayed as a first emission area EA1, and the exposed second lower electrode 285 may be displayed as a second emission area EA2. The first organic light emitting layer 292a is formed on the exposed first lower electrode 280, and the first upper electrode 294a is formed on the first organic light emitting layer 292a. A second organic light emitting layer 292b is formed on the exposed second lower electrode 285, and a second upper electrode 294b is formed on the second organic light emitting layer 292b.

In this case, in order to improve injection characteristics of electrons and holes between the first lower electrode 280 and the first upper electrode 294a and between the second lower electrode 285 and the second upper electrode 294b, It may include at least some layers of a hole injection layer, a hole transport layer, an electron transport layer and an electron injection layer. The first organic light emitting layer 292a and the second organic light emitting layer 292b are white organic light emitting layers and are integrally formed.

The first upper electrode 294a and the second upper electrode 294b are integrally formed. In addition, an upper reflection electrode 296 is disposed on the second upper electrode 294b to correspond to the second lower electrode 285.

In the organic light emitting display device according to the second embodiment, an encapsulation substrate 499 is spaced apart from the substrate 205. The encapsulation substrate 299 may be a transparent substrate and may be glass, plastic, or the like.

In this case, a first color filter 497 is formed on one surface of the encapsulation substrate 499, and a black matrix 498 is formed in a region other than the first color filter 497.

At this time, the encapsulation substrate 499 having the first color filter 497 and the black matrix 498 is disposed to face the substrate 205, and the first color filter 497 is disposed in the first pixel region PT. It is positioned to correspond to the first emission area EA1.

The first color filter 497 corresponds to the first lower electrode 280 and has an area substantially the same as or larger than at least the first lower electrode 280.

Accordingly, light emitted from the first organic light emitting layer 292a through the first upper electrode 294a is emitted through the first color filter 497, thereby performing top emission of the first pixel region PT.

In addition, the light emitted from the second organic light emitting layer 292b is reflected by the upper reflection electrode 296, and then passes through the second lower electrode 285 and the second color filter 265 to pass through the second pixel region PB. Lower emission of light is realized.

Hereinafter, a manufacturing process of the organic light emitting display device according to the second embodiment will be described in detail with reference to the accompanying drawings.

5A to 5C are cross-sectional views illustrating a manufacturing process of an organic light emitting display device according to a second embodiment.

First, referring to FIG. 5A, the organic light emitting display device according to the second embodiment (as in the first embodiment, the substrate 205 in which the first pixel region PT and the second pixel region PB are defined) is described. Prepare.

Gate electrodes 210 and 215 are formed in the first pixel region PT and the second pixel region PB of the substrate 205. Thereafter, a gate insulating film 220 is formed on the gate electrode 205.

Then, the semiconductor layers 230 and 235 corresponding to the respective gate electrodes 210 and 215 are formed on the gate insulating layer 220.

Thereafter, n-type ions or p-type ions are implanted into the exposed semiconductor layers 230 and 235 using the etch stoppers 240 and 245 as a mask to form the semiconductor layers 230 and 235 to have source / drain regions. . At this time, the etch stoppers 240 and 245 of the semiconductor layers 230 and 235 are not covered by ion implantation, and portions corresponding to the gate electrodes 210 and 215 become channel regions.

Then, source / drain electrodes 250 and 255 are formed on the semiconductor layers 230 and 235 with the etch stoppers 240 and 245 therebetween. In this case, the semiconductor layers 230 and 235 are protected by the etch stoppers 240 and 245 in the etching process of the source / drain electrodes 250 and 255.

Thereafter, after the first passivation layer 270 is formed over the entire surface of the substrate 205, the second color filter 265 is formed to be positioned in the second pixel region PB. Then, a second passivation film 290 is formed over the entire surface of the substrate 205 including the first passivation film 270.

Thereafter, the first passivation layer 270 and the second passivation layer 290 are etched to form via holes V1 exposing the respective source / drain electrodes 250 and 255.

Thereafter, the first lower electrode 280 and the second lower electrode 285 are formed to be electrically connected to the respective source / drain electrodes 250 and 255 through the via hole V1.

In this case, the first lower electrode 280 and the second lower electrode 285 are formed in the same manner as formed in the first embodiment.

Thereafter, a bank 290 having openings G1 and G2 exposing the first lower electrode 280 and the second lower electrode 285 is formed.

Then, a first organic light emitting layer 292a and a first upper electrode 294a formed on the first lower electrode 280 are formed, and a second organic light emitting layer 292b positioned on the second lower electrode 285. ) And a second upper electrode 294b.

Thereafter, the upper reflection electrode 296 positioned on the second upper electrode 294b is formed.

After that, referring to FIG. 5B, a sealing substrate 499 is further prepared. In this case, the encapsulation substrate 499 is a transparent substrate, and may be glass, plastic, or the like.

Then, the first color filter 497 is formed on a portion of the sealing substrate 499. Then, the black matrix 498 is formed in a region other than the first color filter 497 of the sealing substrate 499.

Subsequently, the substrate 205 formed up to the upper reflection electrode 296 and the sealing substrate 499 are positioned to face each other. In this case, the first color filter 497 is positioned to correspond to the first emission area EA1 of the substrate 205.

Thereafter, the substrate 205 and the encapsulation substrate 499 are bonded together to complete the organic light emitting display device according to the second embodiment of the present invention.

Bonding the substrate 205 and the sealing substrate 499 may use one of a sealing method using a sealing agent, a sealing method using a frit technique, a sealing method for passivation with a sealing film, and a method of mixing them.

In this case, the light emitted from the first emission area EA1 is emitted to the upper portion of the substrate 205 through the first upper electrode 294a, the first color filter 497, and the encapsulation substrate 499. Light emitted from the second emission area EA2 is reflected by the upper reflection electrode 296 and is emitted to the lower portion of the substrate 205 through the first lower electrode 285 and the second color filter 265.

As described above, in the organic light emitting diode including the pixel area emitting upwardly and the second pixel area emitting downwardly, each pixel is independently driven by each thin film transistor. In addition, by repeatedly including the upper and lower light emitting regions on the substrate 205, it is possible to develop devices with improved contrast and visibility.

Hereinafter, the driving principle of the organic light emitting display device according to an embodiment of the present invention will be described in more detail with reference to FIG. 6.

6 is a schematic circuit diagram of an organic light emitting display device according to the system configuration of FIG. 1.

1 and 6, the display panel 140 of the organic light emitting display device 100 according to an embodiment includes a pixel area including a first pixel area PT and a second pixel area PB ( P).

Each pixel of the first pixel area PT and the second pixel area PB includes at least one organic light emitting diode OLED1 including an anode as a first electrode, a cathode as a second electrode, and a light emitting layer. , OLED2).

In addition, each pixel of the first pixel area PT and the second pixel area PB may include a first pixel area PT and a gate line crossing the gate lines GLy ^T and GLy ^B and one data line DLx. Each of the switching transistors ST1 and ST2 and the high potential voltage line VDD and the driving transistors DT1 and DT2 and the driving transistors DT1 and Driving circuits 610 and 620 including a storage capacitor formed between the gate electrode of DT2 and the high potential voltage line VDD.

Specifically, each of the driving circuits 610 and 620 includes a first gate line GLy ^T and a second gate line GLy ^B formed in a row direction, one data line DLx formed in a column direction, and a high potential voltage. The line VDD is connected.

The source electrode of the first switching transistor ST1 is connected to the data line DLx, and the drain electrode of the first switching transistor ST1 is connected to the gate electrode of the first driving transistor DT1. The first switching transistor ST1 is turned on / off by the gate signal of the first gate line GL _y ^T. The current flowing between the source and the drain of the first driving transistor DT1 is controlled by a data signal applied through the first switching transistor ST1. The first electrode of the first capacitor C1 is connected to the source electrode of the first driving transistor DT1, and the second electrode of the capacitor is connected to the gate electrode of the first driving transistor DT1 so that the data signal is applied. The voltage between the source electrode and the gate electrode of the first driving thin film transistor is maintained for a predetermined period and applied to the gate electrode of the first driving transistor DT1.

By such a configuration, when the first switching transistor ST1 is turned on by the gate signal of the first gate line GLy ^T applied to the gate electrode of the first switching transistor ST1, the first capacitor C1 is turned on. ) Is charged with a voltage corresponding to the data signal applied through the data line DLx, and the voltage charged with the first capacitor C1 is applied to the gate electrode of the first driving transistor DT1 to form the first driving transistor ( The current flows through DT1). A current may be applied to the first electrode of the first organic light emitting diode from the drain electrode of the first driving transistor to emit light of the first organic light emitting diode OLED1.

The source electrode of the second switching transistor ST2 is connected to the data line DLx, and the drain electrode of the second switching transistor ST2 is connected to the gate electrode of the second driving transistor DT2. The second switching transistor ST2 is turned on / off by the gate signal of the second gate line GLy ^B. The current flowing between the source and the drain of the second driving transistor DT2 is controlled by a data signal applied through the second switching transistor ST2. The first electrode of the second capacitor C2 is connected to the source electrode of the second driving transistor DT2, and the second electrode of the second capacitor C2 is connected to the gate electrode of the first driving transistor DT1. The voltage between the source electrode to which the data signal is applied and the gate electrode of the second driving transistor DT2 is maintained for a predetermined period and applied to the gate electrode of the second driving transistor DT2.

By such a configuration, when the second switching transistor ST2 is turned on by the gate signal of the second gate line GLy ^B applied to the gate electrode of the second switching transistor ST2, the second capacitor C2 is turned on. ) Is charged to a voltage corresponding to the data signal applied through the data line DLx, and the voltage charged to the second capacitor C2 is applied to the gate electrode of the second driving transistor DT2 to form the second driving transistor ( DT2) flows current. A current may be applied to the second electrode of the second organic light emitting diode at the drain electrode of the second driving transistor to emit light of the second organic light emitting diode.

Therefore, in the organic light emitting display device 100 according to the present invention, when the first switching transistor ST1 is turned on by a gate signal applied through the first gate line GLy ^T , the organic light emitting display device 100 is connected to the organic light emitting display device 100 through the data line DLx. The first driving transistor DT1 is driven by the applied data signal to emit the first organic light emitting diode OLED1 having the top emission, and sequentially by the gate signal applied through the second gate line GLy ^B. When the second switching transistor ST2 is turned on, the second driving transistor DT2 is driven by the data signal applied through the data line DLx, thereby emitting the second organic light emitting diode OLED2 having lower emission. Individual control of the organic light emitting diodes OLED1 and OLED2 is possible. Therefore, in the image implementation of the first organic light emitting diode OLED1 and the second organic light emitting diode OLED2, it is possible to implement a normal image in which left and right are not switched.

For example, while the image "R" is implemented in the first organic light emitting diode OLED1 having the top light emission, the image "R" is simultaneously implemented in the second organic light emitting element OLED2 having the bottom emission state without switching. This would be possible.

7 is a system configuration diagram of an organic light emitting display device applied to another embodiment. FIG. 8 is a schematic circuit diagram of an organic light emitting display device 700 according to the system configuration of FIG. 7.

The organic light emitting display device 700 described with reference to FIGS. 7 and 8 except for a connection state between a gate line and a data line connected to the first pixel area PT and the second pixel area PB, It is the same as the system block diagram described in FIG. Therefore, the description of the configuration having the same reference numeral will be omitted.

7 and 8, an organic light emitting display device 700 according to another exemplary embodiment includes a pixel area P including a first pixel area PT and a second pixel area PB.

Each pixel of the first pixel area PT and the second pixel area PB includes at least one organic light emitting diode OLED1 including an anode as a first electrode, a cathode as a second electrode, and a light emitting layer. , OLED2).

Each pixel of the first pixel area PT and the second pixel area PB includes a first pixel area PT where the common gate line GLy and the first and second data lines DLx ^T and DLx ^B cross each other; The switching transistors ST1 and ST2 and the driving transistors DT1 and DT2 and the driving transistor DT1 formed between the high potential voltage line VDD and the organic light emitting diodes OLED1 and OLED2 respectively formed in the second pixel region PB. And driving circuits 710 and 7620 including a storage capacitor formed between the gate electrode of DT2 and the high potential voltage line VDD.

Therefore, in the organic light emitting display device 700 according to another exemplary embodiment, the first switching transistor ST1 and the second switching transistor ST2 are turned on by the gate signal applied through the common gate line GL _y . When the first and second driving transistors DT1 and DT2 are driven by data signals applied through the first and second data lines DLx ^T and DLx ^B , the first and second organic light emitting diodes OLED1 and OLED2) allows individual control of two organic light emitting diodes OLED1 and OLED2. Therefore, in the image implementation of the first organic light emitting diode OLED1 and the second organic light emitting diode OLED2, it is possible to implement a normal image in which left and right are not switched.

For example, while the image "R" is implemented in the first organic light emitting diode OLED1 having the top light emission, the image "R" is simultaneously implemented in the second organic light emitting element OLED2 having the bottom emission state without switching. This would be possible.

Embodiments have been described above with reference to the drawings, but the present invention is not limited thereto.

For example, the organic light emitting diode in the above embodiment has been described with an example of including an organic light emitting layer including a white light emitting layer and a color filter. One full color organic electroluminescent device may be formed. In this case, the color filters may not be included in each pixel area.

In addition, although the light emitting material of the light emitting layer included in the organic layer in the above-described embodiment is described as being an organic material, the light emitting material of the light emitting layer may include a quantum dot such as graphene quantum dots. In a broad sense, a display device / display device including a quantum dot as a light emitting layer may also be included in an organic light emitting display device / display device.

The terms "comprise", "comprise" or "having" described above mean that a corresponding component may be included unless specifically stated otherwise, and thus does not exclude other components. It should be construed that it may further include other components. All terms, including technical and scientific terms, have the same meanings as commonly understood by one of ordinary skill in the art unless otherwise defined. Terms commonly used, such as terms defined in a dictionary, should be interpreted to coincide with the contextual meaning of the related art, and shall not be construed in an ideal or excessively formal sense unless explicitly defined in the present invention.

The above description is merely illustrative of the technical idea of the present invention, and those skilled in the art to which the present invention pertains may make various modifications and changes without departing from the essential characteristics of the present invention. Therefore, the embodiments disclosed in the present invention are not intended to limit the technical idea of the present invention but to describe the present invention, and the scope of the technical idea of the present invention is not limited by these embodiments. The protection scope of the present invention should be interpreted by the following claims, and all technical ideas within the scope equivalent thereto should be construed as being included in the scope of the present invention.

Claims (12)

In the organic electroluminescent device,
At least one comprising a first lower electrode having a multilayer conductive layer formed on the substrate, a first organic light emitting layer formed on the first lower electrode, and a first upper electrode formed on the first organic light emitting layer. A first pixel region; And
A second lower electrode formed on the substrate at a distance from the first lower electrode, a second organic light emitting layer integrally formed with the first organic light emitting layer formed on the second lower electrode, and the second organic light emitting layer At least one second pixel region including a second upper electrode formed on and integrally formed with the first upper electrode, and an upper reflection electrode formed on the second upper electrode and covering at least the second organic light emitting layer Including,
The first pixel region further includes a first color filter formed on the first upper electrode,
The second pixel area further includes a second color filter formed on the substrate, wherein the area of the second color filter is equal to or larger than that of the light emitting area of the second lower electrode. The method of claim 1,
And the second lower electrode is disposed above the second color filter. The method of claim 1,
The first lower electrode has a multilayer structure composed of a transparent conductive metal oxide, a reflective conductive layer, and another transparent conductive metal oxide in order on the substrate, and the second lower electrode is composed of a transparent conductive metal oxide. Light emitting element. The method of claim 1,
The first color filter is formed on the first upper electrode,
And an encapsulation substrate, wherein the first color filter is formed on the encapsulation substrate in the direction of the first upper electrode. The method of claim 1,
The second lower electrode has an area smaller than that of the first lower electrode. In the method of manufacturing an organic light emitting device,
Forming a first lower electrode of a multilayer structure having a reflective conductive layer on the substrate and a second lower electrode of a single layer structure disposed on the same layer as the first lower electrode with a distance from the first lower electrode; step;
Forming a first organic light emitting layer on the first lower electrode and a second organic light emitting layer integrally with the first organic light emitting layer on the second lower electrode;
Forming a first upper electrode on the first organic light emitting layer and a second upper electrode on the second organic light emitting layer and integrally with the first upper electrode;
Forming an upper reflection electrode on the second upper electrode and covering at least the second organic light emitting layer; And
Forming a first color filter positioned on the first upper electrode;
Before forming the first lower electrode and the second lower electrode, the organic electroluminescence further comprises forming a second color filter on the substrate that is equal to or larger than a light emitting area of the second lower electrode. Method of manufacturing the device. delete The method of claim 6,
Forming a second lower electrode having a single layer structure disposed on the same layer as the first lower electrode at a distance from the first lower electrode and the first lower electrode having a multilayer conductive structure having a reflective conductive layer on the substrate; The steps are,
A method of manufacturing an organic light emitting display device, which is carried out by a halftone mask process. The method of claim 6,
The first color filter is a method of manufacturing an organic light emitting display device, characterized in that formed on the first upper electrode. The method of claim 6,
The method of claim 1, further comprising an encapsulation substrate, wherein the first color filter is formed on the encapsulation substrate in the direction of the first upper electrode. At least one comprising a first lower electrode having a multilayer conductive layer formed on the substrate, a first organic light emitting layer formed on the first lower electrode, and a first upper electrode formed on the first organic light emitting layer. A first pixel region;
A second lower electrode formed at a distance from the first lower electrode formed on the substrate, a second organic light emitting layer integrally formed with the first organic light emitting layer formed on the second lower electrode, and the second organic light emitting layer; At least one second pixel including a second upper electrode formed on the emission layer and integrally formed with the first upper electrode, and an upper reflection electrode formed on the second upper electrode and covering at least the second organic light emitting layer domain;
A first switching transistor transferring a data signal applied to the first data line according to a gate signal applied to the first gate line, a first capacitor storing a voltage corresponding to the transferred data signal, and a voltage stored in the capacitor A first driving circuit including a first driving transistor supplying a current corresponding to the first pixel region; And
A second switching transistor transferring a data signal applied to a second data line according to a gate signal applied to a second gate line, a second capacitor storing a voltage corresponding to the transferred data signal, and a voltage stored in the capacitor And a second driving circuit including a second driving transistor supplying a current corresponding to the second pixel region to the second pixel region.
The first pixel region further includes a first color filter formed on the first upper electrode,
The second pixel area further includes a second color filter formed on the substrate, wherein the area of the second color filter is equal to or larger than that of the light emitting area of the second lower electrode. The method of claim 11,
And the first gate line and the second gate line are common lines.

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