KR102050496B1 - A method for cleaning chamber processing semiconductor material - Google Patents

A method for cleaning chamber processing semiconductor material Download PDF

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KR102050496B1
KR102050496B1 KR1020130018677A KR20130018677A KR102050496B1 KR 102050496 B1 KR102050496 B1 KR 102050496B1 KR 1020130018677 A KR1020130018677 A KR 1020130018677A KR 20130018677 A KR20130018677 A KR 20130018677A KR 102050496 B1 KR102050496 B1 KR 102050496B1
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cleaning
processing chamber
gas
semiconductor processing
cleaning gas
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KR1020130018677A
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Korean (ko)
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KR20140104767A (en
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김주용
조원태
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주성엔지니어링(주)
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B5/00—Cleaning by methods involving the use of air flow or gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

The present invention relates to a method for cleaning a semiconductor processing chamber that improves the cleaning performance of the semiconductor processing chamber. Specifically, the present invention provides a method of cleaning a semiconductor processing chamber in which a deposition process for forming a SiOxC layer in a semiconductor structure is performed, wherein the semiconductor structure is unloaded in the semiconductor processing chamber and residual gas used in the deposition process is removed. Cleaning preparation step of exhausting; A first cleaning step of removing a first by-product of SiO x C series formed on an inner wall of the semiconductor processing chamber; And a second cleaning step of removing the second by-product of the SiOx series formed on the inner wall of the semiconductor processing chamber in the first cleaning step.

Description

A METHOD FOR CLEANING CHAMBER PROCESSING SEMICONDUCTOR MATERIAL}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of cleaning a semiconductor processing chamber, and more particularly, to a method of cleaning a semiconductor processing chamber in which the cleaning performance of the semiconductor processing chamber is improved.

In manufacturing a semiconductor device or a semiconductor module, a process of depositing various reaction gases on a substrate and etching the deposited layers is essentially performed in a chamber.

When a predetermined number of deposition processes or etching processes are repeated in one chamber, by-products generated by the deposition process or the etching process are formed in the chamber or the inner wall of the chamber. When the by-products are formed to have a predetermined size or thickness or more, the by-products are separated from the inner wall of the chamber in the subsequent deposition process or etching process and are then deposited on the semiconductor device or the semiconductor module to be manufactured. The by-products cause a failure of the semiconductor device or the semiconductor module.

In particular, in the encapsulation process of encapsulating a semiconductor device or a semiconductor module that has been completed, a thin film of SiOxC is used, and SiOxC is a byproduct on the inner wall of a processing chamber in which a deposition process for depositing such SiOxC layer is performed. Is formed.

The cleaning method of the semiconductor processing chamber according to the prior art has used NF 3 gas as the cleaning gas to clean the chamber.

However, when using a cleaning gas composed of NF 3 gas, as in the prior art, not only the C component of SiO x C cannot be removed, but also a by-product in the chamber is not completely removed, thereby causing a problem of low cleaning performance.

Accordingly, it is an object of the present invention to provide a method of cleaning a semiconductor processing chamber that solves the problems of the prior art.

In particular, it is an object of the present invention to provide a method for cleaning a semiconductor processing chamber that significantly improves cleaning performance.

To this end, according to an embodiment of the present invention, a method of cleaning a semiconductor processing chamber in which a deposition process for forming an inorganic layer containing carbon in a semiconductor structure is performed, the method of unloading the semiconductor structure in the semiconductor processing chamber And a cleaning preparation step of exhausting residual gas used in the deposition process. A first cleaning step of removing the first by-product of the inorganic substance containing carbon formed on the inner wall of the semiconductor processing chamber; And a second cleaning step of removing the second by-product of the SiOx series formed on the inner wall of the semiconductor processing chamber in the first cleaning step.

Also, preferably, the carbon-containing inorganic material is composed of SiO x C.

Also, preferably, the deposition process for forming the SiOxC layer is performed using a hexamethyldisiloxane (HMDSO) source.

Also, preferably, the first cleaning step may include a first injection step of injecting a fluorine-based first cleaning gas into the semiconductor processing chamber; A second injection step of injecting an oxygen-based second cleaning gas into the semiconductor processing chamber; A first heating step of raising a temperature inside the semiconductor processing chamber into which the first cleaning gas and the second cleaning gas are injected to a predetermined first temperature to maintain the predetermined first temperature; And exhausting residual gases remaining in the semiconductor processing chamber after the first heating step.

Preferably, the first cleaning gas is an NF 3 gas, and the second cleaning gas is an O 2 gas.

In addition, the flow rate ratio of the second cleaning gas to the first cleaning gas supplied into the semiconductor processing chamber in the first cleaning step may be 5: 1 to 10: 1.

Also, preferably, the predetermined first temperature is 80 ° C to 200 ° C.

Also, preferably, the second cleaning step may include: a third injection step of injecting a fluorine-based third cleaning gas into the semiconductor processing chamber; And a second heating step of raising a temperature inside the semiconductor processing chamber into which the first cleaning gas is injected to a predetermined second temperature to maintain the predetermined second temperature.

Further, preferably, the third cleaning gas is the same gas as the first cleaning gas.

Also, preferably, the third cleaning gas is an NF 3 gas.

Also, preferably, the predetermined second temperature is 80 ° C to 200 ° C.

Further, preferably, the ratio of the execution time of the second cleaning step to the execution time of the first cleaning step is 2: 1.

According to another embodiment of the present invention, the present invention provides a method for cleaning a semiconductor processing chamber in which a first deposition process for forming a SiOxC layer and a second deposition process for forming a SiNx layer are alternately performed. A cleaning preparation step of unloading the semiconductor structure in the semiconductor processing chamber and exhausting residual gas used in the deposition process; A first cleaning step of removing a first by-product of SiO x C series formed on an inner wall of the semiconductor processing chamber; And a second cleaning step of removing the second by-products of the SiOx series and the third by-products of the SiNx series formed on the inner wall of the semiconductor processing chamber in the first cleaning step.

Also, preferably, the first cleaning step may include a first injection step of injecting a fluorine-based first cleaning gas into the semiconductor processing chamber; A second injection step of injecting an oxygen-based second cleaning gas into the semiconductor processing chamber; A first heating step of raising a temperature inside the semiconductor processing chamber into which the first cleaning gas and the second cleaning gas are injected to a predetermined first temperature to maintain the predetermined first temperature; And exhausting residual gases remaining in the semiconductor processing chamber after the first heating step, wherein the second cleaning step comprises: a third injecting a third fluorine-based cleaning gas into the semiconductor processing chamber; Injection step; And a second heating step of raising a temperature inside the semiconductor processing chamber into which the first cleaning gas is injected to a predetermined second temperature to maintain the predetermined second temperature.

Preferably, the first cleaning gas and the third cleaning gas are NF 3 gas, and the second cleaning gas is O 2 gas.

According to the above-described problem solving means, the present invention can completely remove the by-product formed during the SiOxC deposition process in the processing chamber in which the SiOxC deposition process is performed.

In addition, the present invention can significantly improve the cleaning performance of the processing chamber in which the SiO x C deposition process is performed. Because of this, the present invention can prevent the contamination of the product by the by-products in the semiconductor processing chamber can significantly reduce the defective rate of the product.

1 is a schematic diagram of a semiconductor processing chamber in accordance with the present invention.
2 is a schematic flowchart of a method of cleaning a semiconductor processing chamber in accordance with an embodiment of the present invention.
3 is a schematic flowchart of a first cleaning step according to an embodiment of the present invention.
4 is a schematic flowchart of a second cleaning step according to an embodiment of the present invention.
5A and 5B show the state of the chamber inside the execution of the cleaning method of the semiconductor processing chamber according to the prior art.
6A-6C show the chamber internal state upon execution of a method of cleaning a semiconductor processing chamber in accordance with the present invention.
7 is a schematic flowchart of a method of cleaning a semiconductor processing chamber in accordance with another embodiment of the present invention.

Hereinafter, exemplary embodiments of the present invention will be described with reference to the accompanying drawings so that those skilled in the art may easily implement the present invention. In the accompanying drawings, it should be noted that the same reference numerals are used in the drawings to designate the same configuration in other drawings as much as possible. In addition, in describing the present invention, when it is determined that a detailed description of a related known function or known configuration may unnecessarily obscure the subject matter of the present invention, the detailed description thereof will be omitted. And certain features shown in the drawings are enlarged or reduced or simplified for ease of description, the drawings and their components are not necessarily drawn to scale. However, those skilled in the art will readily understand these details.

1 is a schematic diagram of a semiconductor processing chamber 1000 in accordance with the present invention.

As shown in FIG. 1, the semiconductor processing chamber 1000 according to the present invention includes a reaction space 100 in which a semiconductor structure to be encapsulated is accommodated and a reaction gas and / or a cleaning gas are injected therein, and the reaction space 100. A susceptor 200 supporting the semiconductor structure, a heating unit 300 for controlling a temperature inside the reaction space 100, and a reaction gas (or process gas) supplied to the reaction space 100. Reaction gas supply unit 400, two cleaning gas supply unit for supplying the cleaning gas in the reaction space 100, and the exhaust unit 600 for discharging the residues such as gas remaining in the reaction space 100 It includes.

The susceptor 200 is a support for supporting a semiconductor structure to be encapsulated, and is configured to be rotatable inside the reaction space 100. In FIG. 1, the batch susceptor 200 is illustrated as an example of the susceptor 200. However, the present invention is not limited thereto, and the susceptor 200 may support a plurality of semiconductor structures. It can be composed of a barrel-type susceptor 200.

Here, the semiconductor structure is a semiconductor package before the airtight encapsulation process is performed, and the semiconductor package is, for example, a liquid crystal display (LCD), a light emitting diode (LED), an organic light emitting diode (OLED), or a solar cell. It may be a semiconductor package constituting a part of the cell).

The heating unit 300 is a temperature control unit that raises and lowers the temperature in the reaction space 100 by operating and stopping operations. The heating unit 300 may be disposed below the susceptor 200 as shown in FIG. 1, but the present disclosure is not limited thereto. Therefore, the heating part 300 may be disposed around the chamber 1000 outside the chamber 1000 or may be disposed inside the susceptor 200. The susceptor 200 may be an electric resistance heater or an RF (Radio Frequency) heater.

The reaction gas supply unit 400 may be configured in a showerhead manner. The reaction gas supply unit 400 is connected to the reaction gas storage through the reaction gas supply pipe. The reaction gas supply unit 400 is configured to supply at least one or more reaction gases to the reaction space 100, and thus the reaction gas supply unit 400 may include at least one shower head. In the present invention, shower heads may be provided for supplying a reaction gas for forming a SiN layer and / or a reaction gas for forming an SiO x C layer in the reaction chamber 1000 to encapsulate the semiconductor structure.

The two cleaning gas supply units include a first cleaning gas supply unit 510 and a second cleaning gas supply unit 530.

The first cleaning gas supply unit 510 includes a shower head for supplying a first cleaning gas (or a third cleaning gas as described below), and the first cleaning gas supply unit 510 includes a first cleaning gas supply pipe ( 511 is connected to the first cleaning gas storage unit 513, the second cleaning gas supply unit 530 is composed of a shower head for supplying a second cleaning gas, the second cleaning gas supply unit 530 The second cleaning gas supply pipe 531 is connected to the second cleaning gas storage unit 533.

 The exhaust part 600 is disposed to communicate with the reaction space 100 under the semiconductor processing chamber 1000. The exhaust unit 600 includes an exhaust pipe 601 communicating with the reaction space 100, an exhaust pump 603 for applying suction force to the exhaust pipe 601, and a discharge pipe connected to the exhaust pump 603 ( 605).

Hereinafter, the cleaning method of the semiconductor processing chamber 1000 using the processing chamber 1000 according to the present invention will be described in detail.

2 is a schematic flowchart of a cleaning method of the semiconductor processing chamber 1000 according to an embodiment of the present invention, and FIG. 3 is a schematic flowchart of a first cleaning step according to an embodiment of the present invention. 4 is a schematic flowchart of a second cleaning step according to an embodiment of the present invention.

As shown in FIGS. 2 to 4, the cleaning method (S2000) of the semiconductor processing chamber 1000 according to the exemplary embodiment of the present invention is performed by performing a deposition process for forming an inorganic layer containing carbon in a semiconductor structure. A method of cleaning the processing chamber 1000 includes a cleaning preparation step (S2100), a first cleaning step (S2200), and a second cleaning step (S2300). That is, the cleaning method (S2000) of the semiconductor processing chamber 1000 according to the exemplary embodiment of the present invention may include the two-step cleaning step to improve the insitu chamber 1000 cleaning performance.

Herein, the inorganic layer containing carbon is a SiOxC layer composed of SiOxC. The deposition process for forming the SiOxC layer is preferably carried out using a hexamethyldisiloxane (HMDSO) source. That is, in order to encapsulate the semiconductor structure into a SiO x C layer, HMDSO is used as the source of SiO x C.

In the cleaning preparation step S2100, the semiconductor structure is unloaded in the semiconductor processing chamber 1000 and the exhaust part 600 (that is, the exhaust pump) is operated to deposit SiOxC and the remaining gas in the remaining chamber 1000. Is executed to exhaust the gas.

This cleaning preparation step (S2100) is not executed every time the deposition process of the SiO x C layer is executed after the execution of the predetermined number of deposition processes is completed. That is, the cleaning preparation step is not performed before every deposition process but at regular intervals. The predetermined number of times is determined based on the thickness of the SiOxC formed on the inner wall of the processing chamber 1000 at a predetermined level or more based on experimental data.

The first by-product of an inorganic substance-containing (eg, SiOxC-based) containing carbon is formed on the inner wall of the processing chamber 1000 by the deposition process of the SiOxC layer, and the first cleaning step (S2200) is performed by the processing chamber 1000. A first step of removing the by-product formed on the inner wall of the first cleaning gas and the second cleaning gas.

Specifically, as shown in FIG. 3, the first cleaning step (S2200) may include a first injection step (S2210) of injecting a fluorine-based first cleaning gas into the semiconductor processing chamber 1000; A second injection step S2230 for injecting an oxygen-based second cleaning gas into the semiconductor processing chamber 1000; A first heating step (S2250) of raising the temperature inside the semiconductor processing chamber 1000 into which the first cleaning gas and the second cleaning gas are injected to a predetermined first temperature to maintain the predetermined first temperature; And an exhausting step (S2270) of discharging residual gases remaining in the semiconductor processing chamber 1000 after the first heating step.

In this case, the first injection step (S2210) and the second injection step (S2230) may be executed simultaneously or sequentially through the first cleaning gas supply unit 510 and the second cleaning gas supply unit 530. .

Here, the first cleaning gas is a fluorine series gas. For example, the first cleaning gas is CF 4 Gas, C 2 F 4 Gas, C 2 F 6 It may be one of the gases.

The second cleaning gas is an oxygen-based gas. For example, the second cleaning gas is O 2 gas or O 3 It may be a gas. The second cleaning gas, which is the oxygen-based gas, is formed as a COx gas by chemically combining the C component by separating the C component from the first by-product of SiOxC formed on the inner wall of the processing chamber 1000. As such, the second cleaning gas may remove C from SiO x C.

The flow rate ratio of the second cleaning gas to the first cleaning gas supplied into the semiconductor processing chamber 1000 in the first cleaning step S2200 is 5: 1 to 10: 1. This is because the ratio reflecting the results of the applicant's experimental data is an optimal ratio of decomposing the first by-product of SiOxC while removing the C component from the first by-product of SiOxC.

Also, preferably, the predetermined first temperature in the first heating step S2250 may be 80 ° C to 200 ° C. That is, in the first heating step, the temperature inside the reaction chamber 1000 is increased to 80 ° C. to 200 ° C. by operating the heating unit 300, and then the temperature inside the reaction chamber 1000 is 80 ° C. to 200 ° C. It is carried out to maintain at ℃. Due to this execution of the first heating step, the first cleaning gas and the second cleaning gas react with the first by-products to decompose (eg, gasify) the first by-products. Herein, the preset range of the first temperature, 80 ° C. to 200 ° C., is a ratio reflecting the results of the applicant's experimental data. Temperature range.

After the end of the first heating step, the exhaust unit 600 is operated to exhaust the SiF 4 gas, the N 2 gas, and the COx gas generated in the first cleaning step.

When the above-described first cleaning step S2200 is completed, a second byproduct of SiOx series may be formed inside the processing chamber 1000 due to the reaction of the first by-product, the first cleaning gas, and the second cleaning gas. The second cleaning step S2300 is a cleaning step of removing the second by-product formed on the inner wall (or inside) of the semiconductor processing chamber 1000 in the first cleaning step.

Specifically, as shown in FIG. 4, in the second cleaning step S2300, after the first cleaning step S2200 is finished, a third fluorine-based third cleaning gas is injected into the semiconductor processing chamber 1000. Third injection step S2310; A second heating step (S2330) of raising a temperature inside the semiconductor processing chamber 1000 into which the third cleaning gas is injected to a predetermined second temperature to maintain the predetermined second temperature; And an exhausting step (S2350) of discharging the residual gas remaining in the processing chamber after completion of the second heating step.

Here, the third cleaning gas is a fluorine-based gas, and the third cleaning gas is supplied into the reaction space 100 from the first cleaning gas supply unit 510 as the same gas as the first cleaning gas.

For example, the third cleaning gas is CF 4 Gas, C 2 F 4 Gas, C 2 F 6 It may be one of the gases.

The third cleaning gas is a gas for decomposing (or gasifying) a second by-product composed of SiOx formed in the processing chamber 1000 in the first cleaning step.

Also, preferably, the predetermined second temperature may be 80 ° C. to 200 ° C. in the second heating step S2330. That is, the second heating step (S2330) operates the heating unit 300 to raise the temperature in the reaction chamber 1000 to 80 ° C. to 200 ° C., and then increases the temperature in the reaction chamber 1000 to 80. It is carried out to maintain the temperature from 200 ° C to 200 ° C. Due to the execution of the second heating step (S2330), the third cleaning gas reacts with the second byproduct (that is, the residue composed of SiOx) to decompose (eg, gasify) the second byproduct. Herein, the preset second temperature range of 80 ° C. to 200 ° C. is an optimal temperature range for decomposing the second by-product, which is SiOxC, as a ratio reflecting the results of the applicant's experimental data.

Preferably, the ratio of the execution time of the second cleaning step S2300 to the execution time of the first cleaning step S2200 may be 2: 1. For example, in the method S2000 of cleaning the semiconductor processing chamber 1000 according to the exemplary embodiment of the present invention, the first cleaning step S2200 is performed for 40 minutes, and the second cleaning step S2300 is performed for 20 minutes. It can be configured to run while. The execution time of the first cleaning step is longer than the execution time of the second cleaning step, because the amount of SiOxC layer (ie, the first by-product) formed in the inner wall of the processing chamber 1000 is increased due to the multiple deposition process of the SiOxC layer. This is because more than the amount of SiOx (ie, second byproduct) formed inside the processing chamber 1000 after the cleaning step. Here, 2: 1, which is the ratio of the execution time of the second cleaning step to the execution time of the first cleaning step, is a ratio reflecting the results of the applicant's experimental data, and is optimal for decomposing the first by-product and the second by-product. Ratio.

5A and 5B show the internal state of the chamber during the execution of the cleaning method of the semiconductor processing chamber according to the prior art, and FIGS. 6A to 6C show the internal state of the chamber during the execution of the cleaning method of the semiconductor processing chamber according to the present invention. have. Specifically, FIG. 6A illustrates an internal state of the chamber when the first cleaning step S2200 of the method of cleaning the semiconductor processing chamber according to the present invention is performed, and FIGS. 6B and 6C illustrate a method of cleaning the semiconductor processing chamber according to the present invention. The internal state of the chamber when the second cleaning step S2300 is executed is shown.

The cleaning method of the semiconductor processing chamber 1000 according to the related art cleans the processing chamber in which the deposition process of the SiO x C layer is performed using only the cleaning gas composed of NF 3 gas. As shown in FIGS. 5A and 5B, as a result of performing the cleaning method of the semiconductor processing chamber according to the related art, by-products composed of SiOxC are stained or particles on the side walls and the bottom surface (or the bottom surface of the susceptor). It could be confirmed that it remained. That is, as a result of the cleaning method of the semiconductor processing chamber according to the prior art, it was confirmed that the inside of the semiconductor processing chamber is not completely cleaned.

According to the cleaning method (S2000) of the semiconductor processing chamber 1000 according to an embodiment of the present invention, the first cleaning step (S2200) by injecting the first cleaning gas and the second cleaning gas into the processing chamber 1000 When executed, the first by-product formed on the inner wall of the processing chamber 1000 is decomposed into the second by-product and the residual gas through the following chemical reaction with the first cleaning gas and the second cleaning gas, and the residual gas is exhausted. It is discharged to the outside of the processing chamber 1000 through the 600.

Figure 112013015813994-pat00001

Referring to FIG. 6A and the chemical formula, after completion of the first cleaning step S2200, second by-products composed of SiOx remain on the inner wall of the processing chamber 1000 in the form of spots or particles.

In this case, when the second cleaning step (S2300) is executed, the second by-product formed on the inner wall of the processing chamber 1000 may undergo the following chemical reaction with the third cleaning gas (ie, the same gas as the first cleaning gas). 2 by-products are decomposed into residual gas, and the residual gas is discharged to the outside of the processing chamber 1000 through the exhaust part 600.

Figure 112013015813994-pat00002

Referring to FIGS. 6B and 6C and the above chemical formula, since the second by-product is decomposed into SiF 4 gas and NO x gas and discharged to the exhaust part 600, the by-product or residue remaining on the inner wall of the processing chamber 1000 is completely removed. can confirm.

As described above, the present invention can completely remove the by-products formed during the SiOxC deposition process in the processing chamber 1000 in which the SiOxC deposition process is performed.

In addition, the present invention can significantly improve the cleaning performance of the processing chamber 1000 in which the SiO x C deposition process is performed. As a result, the present invention can prevent the contamination of the product due to by-products in the semiconductor processing chamber 1000 can significantly reduce the defective rate of the product.

7 is a schematic flowchart of a cleaning method S3000 of a semiconductor processing chamber 1000 according to another exemplary embodiment of the present disclosure.

The cleaning method (S3000) of the semiconductor processing chamber 1000 according to another embodiment of the present invention is compared with the cleaning method (S2000) of the semiconductor processing chamber 1000 according to the embodiment of the present invention described above. Not only the deposition process for forming the SiOxC layer in the chamber 1000 is performed, but also the deposition process for forming the SiNx layer is alternately performed. Accordingly, in the following description, the same technical features and / or steps as those of the cleaning method S2000 of the semiconductor processing chamber 1000 according to the exemplary embodiment of the present invention will be omitted for clarity of the description and the description thereof will be omitted. Shall be.

As illustrated in FIG. 7, the cleaning method S3000 of the semiconductor processing chamber 1000 according to another exemplary embodiment may include a first deposition process of forming a SiOxC layer on a semiconductor structure and a second process of forming a SiNx layer. A cleaning method for cleaning the semiconductor processing chamber 1000 in which deposition processes are alternately performed.

In addition, the cleaning method (S3000) of the semiconductor processing chamber 1000 includes a cleaning preparation step of unloading the semiconductor structure in the semiconductor processing chamber 1000 and exhausting residual gas used in the deposition process (S3100). ; A first cleaning step (S3200) of removing a first by-product of SiO x C series formed on an inner wall of the semiconductor processing chamber 1000; And a second cleaning step (S3300) of removing the second by-product of the SiOx series and the third by-product of the SiNx series formed on the inner wall of the semiconductor processing chamber 1000 in the first cleaning step.

That is, in the second cleaning step S3300, the processing chamber in the deposition process (ie, the second deposition process) of the SiON-based residue and the SiNx layer which are the second by-products formed by the first cleaning step using the second cleaning gas. Simultaneously removing the third by-product of the SiNx series formed on the inner wall of (1000).

In detail, the first cleaning step S3200 may include a first injection step of injecting a fluorine-based first cleaning gas into the semiconductor processing chamber 1000; A second injection step of injecting an oxygen-based second cleaning gas into the semiconductor processing chamber 1000; A first heating step of raising a temperature inside the semiconductor processing chamber 1000 into which the first cleaning gas and the second cleaning gas are injected to a predetermined first temperature and maintaining the predetermined first temperature; And exhausting residual gases remaining in the semiconductor processing chamber 1000 after the first heating step.

The second cleaning step S3300 may include a third injection step of injecting a fluorine-based third cleaning gas into the semiconductor processing chamber 1000; And a second heating step of raising a temperature inside the semiconductor processing chamber 1000 into which the first cleaning gas is injected to a predetermined second temperature to maintain the predetermined second temperature.

At this time, most preferably, the first cleaning gas and the third cleaning gas may be an NF 3 gas, and the second cleaning gas may be an O 2 gas.

As described above, the present invention can completely remove by-products formed during the SiOxC deposition process and by-products formed during the SiNx deposition process in the processing chamber in which the SiOxC deposition process and the SiNx deposition process are alternately performed.

In addition, the present invention can significantly improve the cleaning performance of the processing chamber in which the SiO x C deposition process and the SiN x deposition process are performed. Because of this, the present invention can prevent the contamination of the product by the by-products in the semiconductor processing chamber can significantly reduce the defective rate of the product.

Although illustrated and described in the specific embodiments to illustrate the technical spirit of the present invention, the present invention is not limited to the same configuration and operation as the specific embodiment as described above, within the limits that various modifications do not depart from the scope of the invention It can be carried out in. Therefore, such modifications should also be regarded as belonging to the scope of the present invention, and the scope of the present invention should be determined by the claims below.

1000: Semiconductor Processing Chamber
100: reaction space
200: susceptor
300: heating unit
400: reaction gas supply unit
510: first cleaning gas supply unit
511: first cleaning gas supply pipe
513: first cleaning gas storage unit
530: second cleaning gas supply unit
531: second cleaning gas supply pipe
533: second cleaning gas storage unit
600: exhaust
601 exhaust pipe
603: exhaust pump
605: discharge tube
S2000: Cleaning method of a semiconductor processing chamber according to an embodiment
S3000: Cleaning method of a semiconductor processing chamber according to another embodiment

Claims (15)

A method of cleaning a semiconductor processing chamber in which a deposition process for forming an inorganic layer containing carbon in a semiconductor structure is performed,
A cleaning preparation step of unloading the semiconductor structure in the semiconductor processing chamber and exhausting residual gas used in the deposition process;
A first cleaning step of decomposing the first by-product of the SiO x C series formed in the deposition process into a residual gas and a second by-product of the SiO x based; And
And a second cleaning step of removing the second by-product of the SiOx series decomposed in the first cleaning step.
The first cleaning step,
Using the first cleaning gas of fluorine series and the second cleaning gas of oxygen series,
And the second cleaning step is performed after the residual gas decomposed in the first cleaning step is discharged to the outside of the semiconductor processing chamber. The method of claim 1,
And the carbon-containing inorganic material is composed of SiO x C. The method of claim 1,
The first cleaning step,
A first injection step of injecting the first cleaning gas into the semiconductor processing chamber;
A second injection step of injecting the second cleaning gas into the semiconductor processing chamber;
A first heating step of raising a temperature inside the semiconductor processing chamber into which the first cleaning gas and the second cleaning gas are injected to a predetermined first temperature to maintain the predetermined first temperature; And
And exhausting residual gases remaining in the semiconductor processing chamber after the first heating step. The method of claim 3,
And a flow rate ratio of the second cleaning gas to the first cleaning gas supplied into the semiconductor processing chamber in the first cleaning step is 5: 1 to 10: 1. The method of claim 3,
The predetermined first temperature is a cleaning method of a semiconductor processing chamber, characterized in that 80 ℃ to 200 ℃. The method of claim 3,
The second cleaning step,
A third injection step of injecting a fluorine-based third cleaning gas into the semiconductor processing chamber; And
And a second heating step of raising the temperature inside the semiconductor processing chamber into which the third cleaning gas is injected to a predetermined second temperature to maintain the predetermined second temperature. Way. The method of claim 6,
And the third cleaning gas is the same gas as the first cleaning gas. The method of claim 6,
The predetermined second temperature is a method for cleaning a semiconductor processing chamber, characterized in that 80 ℃ to 200 ℃. The method according to any one of claims 1 to 8,
And a ratio of the execution time of the second cleaning step to the execution time of the first cleaning step is 2: 1. A method of cleaning a semiconductor processing chamber in which a first deposition process for forming a SiOxC layer in a semiconductor structure and a second deposition process for forming a SiNx layer are alternately performed.
A cleaning preparation step of unloading the semiconductor structure in the semiconductor processing chamber and exhausting residual gas used in the deposition process;
A first cleaning step of decomposing the SiOxC-based first by-product formed in the first deposition process into a residual gas and a second by-product of SiOx-based;
And a second cleaning step of removing the second by-products of the SiOx series and the third by-products of the SiNx series formed in the second deposition process.
And the second cleaning step is performed after the residual gas decomposed in the first cleaning step is discharged to the outside of the semiconductor processing chamber. The method of claim 10,
The first cleaning step,
A first injection step of injecting a fluorine-based first cleaning gas into the semiconductor processing chamber;
A second injection step of injecting an oxygen-based second cleaning gas into the semiconductor processing chamber;
A first heating step of raising a temperature inside the semiconductor processing chamber into which the first cleaning gas and the second cleaning gas are injected to a predetermined first temperature to maintain the predetermined first temperature; And
And exhausting residual gases remaining in the semiconductor processing chamber after the first heating step.
The second cleaning step,
A third injection step of injecting a fluorine-based third cleaning gas into the semiconductor processing chamber; And
And a second heating step of raising a temperature inside the semiconductor processing chamber into which the first cleaning gas is injected to a predetermined second temperature to maintain the predetermined second temperature. Way. The method of claim 11,
And the first cleaning gas and the third cleaning gas are NF 3 gas, and the second cleaning gas is O 2 gas. delete delete delete
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