KR102043412B1 - Organic Light Emitting Diode Display Device and Method for Manufacturing The Same - Google Patents

Abstract

An organic light emitting display device according to an aspect of the present invention includes a flexible substrate; A photochromic layer disposed on the flexible substrate; A thin film transistor, a gate line and a data line disposed on the photochromic layer; A pad unit connected to one end of one of the gate line and the data line; A first electrode disposed on the thin film transistor and connected to the thin film transistor; An organic light emitting layer disposed on the first electrode and emitting light in a region in contact with the first electrode; And a second electrode disposed on the organic light emitting layer.

Description

Organic Light Emitting Diode Display Device and Method for Manufacturing The Same

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic light emitting display device and a method of manufacturing the same, and more particularly, to an organic light emitting display device based on a flexible substrate and a method of manufacturing the same.

In recent years, organic light emitting display devices, which have superior color reproducibility, thinner thickness, lower power consumption, wider viewing angle, and faster response speed, have been spotlighted as next generation display devices. In addition, various studies have been conducted since the organic light emitting display device is more advantageous than the conventional liquid crystal display device in implementing a flexible display device, which is one of future display devices.

In the case of a flexible organic light emitting display device, in the manufacturing process, after a flexible substrate is formed on a base substrate, various elements and metal wirings are generally formed. After forming all the components of the display device, the base substrate is finally separated from the flexible substrate to complete the process, wherein a process called laser release is used.

The laser release is a process of separating a base substrate and a flexible substrate by emitting a gas from a sacrificial layer formed between the base substrate and the flexible substrate after irradiating a light source having a specific wavelength to the base substrate.

1 is a cross-sectional view illustrating a laser release process of a general organic light emitting display device.

As shown in FIG. 1, the base substrate 101 and the sacrificial layer 102 are separated from the flexible substrate 110 by a laser release process. Before the laser release process, the thin film transistor 120, the gate line 131, and the data line 132 are sequentially stacked on the base substrate 101, the sacrificial layer 102, and the flexible substrate 110. And the pad part 140 is formed, and the insulating layer 130 is formed to cover an area except the pad part 140. The insulating layer 130 may be an organic planarization layer. Thereafter, the first electrode 150, the organic light emitting layer 160, and the second electrode 170 are sequentially formed.

Because of the flexible characteristics of the flexible substrate 110, process reliability is lowered when the component is directly formed on the flexible substrate 110. Therefore, the base substrate 101 is required as described above.

After forming all the above components of the organic light emitting display device, in a laser release process in which the base substrate 101 is separated from the flexible substrate 110, a light source of an ultraviolet (Ultra Violet) wavelength band is generally used. This is used.

When a light source having a wavelength of about 355 nm or less is used, separation of the base substrate 101 and the flexible substrate 110 can be easily performed, and the flexible substrate 110 can be separated even without a sacrificial layer. In addition, among the components formed on the flexible substrate 110, a structure formed of a metal including a thin film transistor, particularly an oxide thin film transistor, is advantageous in that it is not damaged by the light source.

However, equipment using a light source having a wavelength of 355 nm or less is very expensive and disadvantageous in mass production because of its low power.

Therefore, for mass production, the cost of the equipment is low, and because of the high output, it is possible to use a light source having a wavelength of about 532 nm, which is advantageous for mass production. However, in the case of using a light source having a wavelength of 532 nm, a sacrificial layer is necessary at the time of laser release, which may cause damage to the thin film transistor and the structure formed of the metal.

SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and an object thereof is to provide an organic light emitting display device which can reduce damage caused by a laser during a laser release process.

An organic light emitting display device according to an aspect of the present invention for achieving the above technical problem is a flexible substrate; A photochromic layer disposed on the flexible substrate; A thin film transistor, a gate line and a data line disposed on the photochromic layer; A pad unit connected to one end of one of the gate line and the data line; A first electrode disposed on the thin film transistor and connected to the thin film transistor; An organic light emitting layer disposed on the first electrode and emitting light in a region in contact with the first electrode; And a second electrode disposed on the organic light emitting layer.

According to an aspect of the present invention, there is provided a method of manufacturing an organic light emitting display device, including forming a sacrificial layer on a base substrate; Forming a flexible substrate on the sacrificial layer; Forming a photochromic layer on the flexible substrate; Forming a thin film transistor, a gate line and a data line on the photochromic layer; Forming a pad part connected to any one of the gate line and the data line; Forming a first electrode on the thin film transistor; Forming an organic light emitting layer on the first electrode; Forming a second electrode on the organic light emitting layer; Irradiating the photochromic layer with a first light source having a first wavelength to discolor the photochromic layer; And irradiating the base substrate with a second light source having a second wavelength to separate the base substrate from the flexible substrate.

According to the present invention, a metal wiring and a conductive material including a thin film transistor, a gate line, a data line, and a pad part by a light source in a laser release process of forming a photochromic layer on a base substrate to separate the base substrate. There is an effect that can prevent the layer from being damaged.

In addition, according to the present invention, when the photochromic layer is applied to the transparent organic light emitting display device, the visibility may be improved by increasing the contrast ratio when driving the display.

In addition, according to the present invention, it is possible to prevent damage to the metal wiring and the conductive material layer, thereby improving driving reliability of the organic light emitting display device.

1 is a cross-sectional view showing a laser release process of a conventional organic light emitting display device;
2 is a cross-sectional view illustrating an organic light emitting display device according to an embodiment of the present invention;
3 is a cross-sectional view illustrating an organic light emitting display device according to another embodiment of the present invention;
4 is a cross-sectional view illustrating an organic light emitting display device according to another embodiment of the present invention; And
5A through 5D are cross-sectional views illustrating a method of manufacturing an organic light emitting display device according to an embodiment of the present invention.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

2 is a cross-sectional view illustrating an organic light emitting display device according to an embodiment of the present invention.

As shown in FIG. 2, the organic light emitting display device according to the exemplary embodiment of the present invention includes a flexible substrate 210, a photochromic layer 220, a thin film transistor 230, a gate line 231, and a data line ( 232, an insulating layer 240, a pad part 250, a first electrode 260, an organic light emitting layer 270, and a second electrode 280.

The photochromic layer 220 is disposed on the entire surface of the flexible substrate 210 except for the entire surface. The photochromic layer 220 blocks the incidence of the laser into the organic light emitting display during the laser release process, and thus the thin film transistor 230, the gate line 231, and the photochromic layer 220 disposed on the photochromic layer 220. Damage to the metal line or the conductive material layer including the data line 232 and the pad unit 250 is prevented.

The photochromic layer 220 includes a material that is variably changed according to the amount of light absorption, and the material includes all of the compounds that change from color to color by color reaction. Photochromic is also called photochromic or photochromism.

Photochromic material is characterized by the change of chemical structure when irradiated with light of a specific wavelength in the solution or solid state, the absorption spectrum accordingly, irradiated with light of different wavelengths, or return to the initial state when dark.

Specific examples of photochromic materials include silver halides including silver chloride (AgCl), silver bromide (AgBr), silver iodide (AgI), and the like, and organic compounds include azobenzen compounds and diarylethenes. (diarylethene) compounds, spironaphthoxazine compounds, thioindigo compounds, triphenylmethane compounds, furylfulgide derivatives and spiropyrane compounds have.

For example, the photochromic layer 220 may include a spiropyrane-based compound, an azobenzen-based compound, and a diarylethene-based compound. Herein, the spiropyrane compound discolors red when absorbing a light source having a wavelength of 350 nm, and the azobenzen compound discolors green when absorbing a light source having a wavelength of 340 nm, and the diarylethene. A diarylethene compound discolors blue when it absorbs a light source having a wavelength of 310 nm. In addition, the three compounds become transparent when the light source is removed or absorbs a light source having a wavelength of 390 nm.

Accordingly, when irradiated with light having a wavelength of 310 nm, 340 nm, and 350 nm, a spiropyrane-based compound discolors in red, the azobenzen-based compound discolors in green, and the diarylethene The compound is discolored in blue, and the entire photochromic layer 220 is discolored in black so as not to transmit light. Subsequently, after a predetermined time passes after the light source is removed, or when light having a wavelength of 390 nm is irradiated, the photochromic layer 220 becomes transparent again.

The photochromic layer 220 may control the wavelength band and sensitivity of the light source during the laser release process by adjusting the component ratio and the kind of the additive material. In addition, the photochromic layer 220 is composed of a double or multiple layers may have the effect of blocking the light source more reliably during the laser release (laser release) process.

The thin film transistor 230, the gate line 231, and the data line 232 are disposed on the photochromic layer 220. In addition, the metal wiring of the driving circuit is formed of the same material as the gate line 231 and the data line 232. In particular, the thin film transistor 230 may be an oxide thin film transistor including an oxide.

In more detail, the thin film transistor 230 includes a gate electrode (not shown), a semiconductor layer (not shown), a source and a drain electrode (not shown). In general, the gate electrode is formed of the same material on the same layer as the gate line 231, and the source and drain electrodes are formed of the same material on the same layer as the data line 232.

A semiconductor layer is formed above or below the gate electrode, and an insulating layer (not shown) is interposed between the gate electrode and the semiconductor layer to insulate each other. The source and drain electrodes are connected to the semiconductor layer and the data signal input to the source electrode is transferred to the drain electrode through the semiconductor layer according to the gate signal transmitted to the gate electrode.

The gate line 231 and the data line 232 cross each other to define a pixel. Although FIG. 2 shows that the gate line 231 and the data line 232 are disposed on the same layer on the side of the thin film transistor 230, in practice, the gate line 231 and the data line 232 are the insulating layer. Are disposed on different layers with each other intersecting and intersecting each other at a boundary line of the pixel.

In addition, the metal wires excluding the thin film transistor 230 among the metal wires constituting the driving circuit may be formed by patterning the same material on the same layer as each of the gate line 231 and the data line 232. Metal wires formed on different layers may be connected to each other through contact holes (not shown).

Before forming the metal wiring of the driving circuit including the thin film transistor 230, the gate line 231, and the data line 232 on the photochromic layer 220, a buffer layer (not shown) is further added on the photochromic layer 220. Can be formed. The buffer layer may improve process reliability of forming the thin film transistor 230, the gate line 231, and the data line 232.

The insulating layer 240 is formed on the metal line of the driving circuit including the thin film transistor 230, the gate line 231, and the data line 232. The insulating layer 240 maintains insulation between the first electrode 260 and the metal wires before forming the first electrode 260, the organic light emitting layer 270, and the second electrode 280 thereon and is formed of a planarization material. The planarization allows the upper structure to be stably formed.

The pad part 250 is formed to be connected to one end of one of the gate line 231 and the data line 232. Although not illustrated in FIG. 1, the gate line 231 and the data line 232 that cross each other are connected to the pad unit 250 in the pad region. The pad part 250 includes a gate pad and a data pad.

In more detail, the gate line 231 is formed in the first direction of the panel, and a gate pad is formed on the gate line 231 in a pad region located at one end of the first direction. Similarly, the data line 232 is formed in a second direction crossing the first direction of the panel, and a data pad is formed on the data line 232 in a pad region located at one end of the second direction.

Since the pad part 250 may also be damaged by the light source during the laser release process, the photochromic layer 220 is formed in the direction in which the light source is irradiated, so that the photochromic layer 220 is the pad part 250. Can protect.

The first electrode 260, the organic light emitting layer 270, and the second electrode 280 are sequentially formed on the insulating layer 240, and the organic light emitting layer 270 is formed of the first electrode 260 and the second electrode 280. The region in contact with is defined as a light emitting region. The second electrode 280 is disposed on the organic light emitting layer 270. The first electrode 160 is disposed on the thin film transistor 230 with the insulating layer 240 interposed therebetween, and is connected to the thin film transistor 230.

The first electrode 260 may be formed of a conductive oxide including any one of indium, tin, zinc, molybdenum, and tungsten, for example, indium. It may include any one of tin oxide (ITO), indium zinc oxide (IZO), and indium tin zinc oxide (ITZO). The material is not a metal and can be viewed as a conductive material layer.

The second electrode 280 may be formed of a thin metal so that light emitted from the organic light emitting layer 270 may be emitted to the outside. For example, it may include one from a metal group including silver (Ag), magnesium (Mg), calcium (Ca), aluminum (Al), lithium (Li), neodymium (Nd), and the like.

3 is a cross-sectional view illustrating an organic light emitting display device according to another exemplary embodiment of the present invention.

As shown in FIG. 3, an organic light emitting display device according to another embodiment of the present invention includes a first electrode 260, a thin film transistor 230, a gate line 231, a data line 232, and a pad unit. It includes a photochromic layer 220 disposed in the region corresponding to the (250).

The photochromic layer 220 prevents the metal wiring and the conductive material layer formed on the flexible substrate 210 from being damaged by the laser light during the laser release process. Accordingly, the photochromic layer 220 may be formed only in a region corresponding to the metal wiring and the conductive material layer formed on the flexible substrate 210 without having to be formed on the entire surface of the flexible substrate 210.

That is, the photochromic layer 220 may be formed only in an area corresponding to the pad part 250 in the pad area, and the photochromic layer 220 may not be formed in an area except the area corresponding to the pad part 250. In addition, the photochromic layer 220 may not be formed in a region other than the region corresponding to the metal wiring and the conductive material layer including the first electrode 260, the gate line 231, and the data line 232. have.

In addition, the metal lines formed of the same material as the gate line 231 and the data line 232 generally include the thin film transistor 230 to form a driving circuit. The photochromic layer 220 may be formed only in the region corresponding to the driving circuit, and the photochromic layer 220 may not be formed in the region except for the region corresponding to the driving circuit.

When the photochromic layer 220 is partially formed on the flexible substrate 210 as in the present embodiment, the photochromic layer 220 is formed on the flexible substrate 210 and then patterned to form the first electrode 260 and the thin film. The pattern may be formed in a region corresponding to the transistor 230, the gate line 231, the data line 232, and the pad unit 250.

When the photochromic layer 220 is formed in the form of a pattern, it is difficult to stably form the gate line 231, the data line 232, and the pad part 250 including the thin film transistor 230 thereon. Accordingly, the planarization layer 221 may be additionally disposed on the photochromic layer 220 so that the thin film transistor 230, the gate line 231, the data line 232, the pad part 250, and the like may be stably formed. Can be. The planarization layer 221 may include an acrylic resin-based material.

4 is a cross-sectional view illustrating an organic light emitting display device according to another embodiment of the present invention.

4 is a cross-sectional view of an organic light emitting display device, in particular, a transparent organic light emitting display device, wherein a transparent region is further disposed on a side of a light emitting region in a single pixel. Alternatively, the transparent organic light emitting display device illustrated in FIG. 4 may be disposed in a form in which the light emitting area and the transparent area are adjacent to each other or separated by a predetermined distance from each other. The first electrode 260, the organic light emitting layer 270, and the second electrode 280 are formed in the emission region, and the thin film transistor 230 and the gate for driving the organic light emitting layer 270 are formed thereunder. The driving circuit formed by the metal wiring including the line 231 and the data line 232 and the conductive material layer is positioned.

In addition, since the driving circuit positioned in the light emitting area is not formed in the transparent area, transparency is maintained. 4 illustrates that the insulating layer 240 is formed, but is not limited thereto. The insulating layer 240 may be left as a space in which the insulating layer 240 is not formed, or some of the components positioned in the emission region may be formed.

For example, in the case of the WRGB method, since the organic light emitting layer 270 is formed on the entire surface of the flexible substrate 210 except for a portion, the organic light emitting layer 270 may be formed in the transparent region. However, in the RGB method, since the organic light emitting layer 270 is independently deposited for each pixel, it may not be formed in the transparent region.

In addition, when the second electrode 280 is a cathode, the cathode may be formed in the transparent region if the cathode is not a pixel formed independently of each pixel but a common electrode formed in common without pixel division. However, without being limited to the above description, some or all of the components except for the organic light emitting layer 270 and the second electrode 280 among the components disposed in the emission region may be formed in the transparent region.

Since the photochromic layer 220 is partially formed on the flexible substrate 210 as in the previous embodiment, the photochromic layer 220 is patterned to form the first electrode 260, the thin film transistor 230, and the gate line. 231, the data line 232 and the pad part 250 may be formed in a pattern shape.

When the photochromic layer 220 is formed in the form of a pattern, since the gate line 231 including the thin film transistor 230, the data line 232, and the pad part 250 are hardly formed on the photochromic layer 220, The planarization layer 221 may be additionally formed on the photochromic layer 220 to stably form the thin film transistor 230, the gate line 231, the data line 232, the pad part 250, and the like. .

As described above, when the photochromic layer 220 is formed on the flexible substrate 210 in the form of a pattern on the flexible organic light emitting display device, or is formed on the entire surface of the flexible substrate 210 except for the entire surface or a part thereof, the display device is driven. It can also serve as a shading plate to improve contrast in bright places or outdoors.

5A through 5D are cross-sectional views illustrating a method of manufacturing an organic light emitting display device according to an embodiment of the present invention.

As shown in FIG. 5A, first, the sacrificial layer 202 is formed on the base substrate 201, and then the flexible substrate 210 is formed on the sacrificial layer 202. The flexible substrate 210 is made of polyethersulphone (PES), polyacrylate (PAR), polyetherimide (PEI), polyethyelenen Napthalate (PEN), polyethylene terephthalate (Polyethyelene Terepthalate) PET), Polyphenylene Sulfide (PPS), Polyallylate, Polyimide, Polycarbonate (PC), Cellulose Triacetate (TAC) and Cellulose Acetate Propionate : CAP) may be included.

The flexible substrate 210 may be formed by, for example, spin coating. In more detail, after placing the liquid material including any one of the above-described materials on the sacrificial layer 202, the base substrate 201 is rotated at high speed to form the thin flexible substrate 210 having high thickness uniformity. have.

In addition, the flexible substrate 210 may be formed by a roll coating method or a slit coating method. The two methods have a disadvantage in that thickness uniformity is inferior to that of the spin coating method. Is relatively high.

Next, the photochromic layer 220 is formed on the flexible substrate 210. The photochromic layer 220 includes silver chloride (AgCl), silver bromide (AgBr), silver iodide (AgI), azobenzen compound, diarylethene compound, spironaphthoxazine compound, dioindigo (thioindigo) compound, triphenylmethane (triphenylmethane) compound, a furylfulgide derivative (furylfulgide) derivatives and may include any one of the spiropyrane (spiropyrane) compound.

Even when the photochromic layer 220 is formed, it may be formed by a spin coating method, a roll coating method, a slit coating method, or the like as the flexible substrate 210.

The photochromic layer 220 may be formed on the entire surface of the flexible substrate 210 except for a part or the entire surface thereof, and the photochromic layer 220 may be patterned to form the first electrode 260, the thin film transistor 230, and the gate line. 231, only the area corresponding to the data line 232 and the pad part may be left in the form of a pattern. That is, the photochromic layer 220 is removed by removing the photochromic layer 220 positioned in the region except for the region corresponding to the first electrode 260, the thin film transistor 230, the gate line 231, the data line 232, and the pad unit. The first electrode 260, the thin film transistor 230, the gate line 231, the data line 232, and the pad portion may be formed in a pattern formed in a region corresponding to the first electrode 260.

When the photochromic layer 220 is formed on the entire surface of the flexible substrate 210 except for the entire surface or part of the flexible substrate 210, or in particular, when the photochromic layer 220 is formed in the form of a pattern on the flexible substrate 210, A planarization layer (not shown) may be further formed on the layered layer 220. Further, in order to more stably form the thin film transistor 230, the gate line 231, the data line 232, and the like, which will be formed later on the photochromic layer 220, a buffer layer may be further formed on the photochromic layer 220. Can be.

Next, a driving circuit may be formed by forming a metal wiring including the thin film transistor 230, the gate line 231, and the data line 232, and a conductive material layer. The pad part 250 is formed at one end of one of the gate line 231 and the data line 232, and the pad part 250 is connected to one end of either the gate line 231 and the data line 232.

Next, an insulating layer 240 is formed on the thin film transistor 230, the gate line 231, and the data line 232, and the first electrode 260 and the organic light emitting layer 270 are formed on the insulating layer 240. ) And the second electrode 280 are sequentially formed. The insulating layer 240 is formed of an organic material having excellent planarization characteristics to planarize unevenness of the driving circuit including the thin film transistor 230, the gate line 231, and the data line 232 and the conductive material layer. Can be.

Next, as shown in FIG. 5B, the first light source having the first wavelength is irradiated toward the base substrate 201 and the photochromic layer 220 for about 10 seconds or more. As the first wavelength, a wavelength band capable of selectively reacting only with the photochromic layer 220 may be used (a unique wavelength band through which materials may be discolored for each material of the photochromic layer), and more specifically, the first wavelength may be a thin film transistor ( 230, the metal line including the gate line 231 and the data line 232, and a conductive material layer may be defined as a wavelength that does not damage or cause a characteristic change. At this time, the photochromic layer 220 absorbs the first light source and discolors. The color of the discoloration and the degree of discoloration vary for each material of the photochromic layer 220, the material forming the photochromic layer 220 blocks the second light source to be irradiated later, the thin film transistor 230, the gate line 231 and the data The line 232 or the like may be of a material that can prevent damage.

Next, as shown in FIG. 5C, when the second light source having the second wavelength is irradiated toward the base substrate 201, gas is emitted from the sacrificial layer 202 and the sacrificial layer 202 and The base substrate 201 is separated from the flexible substrate 210.

As described above, the step of separating the sacrificial layer 202 and the base substrate 201 from the flexible substrate 210 by irradiating the second light source proceeds while the photochromic layer 220 is already discolored by the first light source. In this case, since the second light source is blocked in the photochromic layer 220, the transistor 230, the gate line 231, the data line 232, and the like may be prevented from being damaged by the second light source. The second wavelength generally has a range of 308 nm to 532 nm, but more clearly the first wavelength can be determined in a larger range than the second wavelength.

Finally, as shown in FIG. 5D, the photochromic layer 220 may return to the original transparent state when the irradiation of the third light source stops the irradiation of the second light source or irradiates the third light source that can be restored to its original state. . The third light source may vary depending on the material of the photochromic layer 220.

As described above, the photochromic layer 220 which is discolored according to the irradiation of the light source is applied to the organic light emitting display device based on the flexible substrate 210 so that the thin film is formed by the light source during the laser release process of separating the base substrate. The metal wiring and the conductive material layer including the transistor, the gate line, the data line, and the pad portion may be prevented from being damaged. In particular, when the photochromic layer 220 is applied to the transparent organic light emitting display device, the visibility may be improved by increasing the contrast ratio when driving the display. In addition, the driving reliability of the organic light emitting display device may be improved by preventing damage to the metal lines and the conductive material layer.

Those skilled in the art to which the present invention pertains will understand that the above-described present invention can be implemented in other specific forms without changing the technical spirit or essential features.

Therefore, it is to be understood that the embodiments described above are exemplary in all respects and not restrictive. The scope of the present invention is shown by the following claims rather than the detailed description, and all changes or modifications derived from the meaning and scope of the claims and their equivalent concepts should be construed as being included in the scope of the present invention. do.

210: flexible substrate 220: photochromic layer
230: thin film transistor 231: gate line
232: data line 240: insulating layer
250: pad portion 260: first electrode
270: organic light emitting layer 280: second electrode

Claims (12)

A flexible substrate;
A photochromic layer disposed on the flexible substrate;
A thin film transistor, a gate line and a data line disposed on the photochromic layer;
A pad unit connected to one end of one of the gate line and the data line;
A first electrode disposed on the thin film transistor and connected to the thin film transistor;
An organic light emitting layer disposed on the first electrode and emitting light in a region in contact with the first electrode; And
A second electrode disposed on the organic light emitting layer,
The photochromic layer is organic light emitting display device characterized in that the color change in accordance with the amount of light absorption. delete The method of claim 1,
The photochromic layer is silver chloride (AgCl), silver bromide (AgBr), silver iodide (AgI), azobenzen (azobenzen), diarylethene, spironaphthoxazine, dioindigo, triphenylmethane ( An organic light emitting display device comprising any one of triphenylmethane), a furylfulgide derivative, and spiropyrane. The method of claim 1,
And the photochromic layer is disposed in a region corresponding to the first electrode, the thin film transistor, the gate line, the data line, and the pad part. The method according to any one of claims 1, 3 or 4,
The organic light emitting display device further includes a planarization layer disposed on the photochromic layer.
And each of the thin film transistor, the gate line and the data line are formed on the planarization layer. The method according to any one of claims 1, 3 or 4,
The organic light emitting display device further includes a buffer layer disposed on the photochromic layer,
And the thin film transistor, the gate line, and the data line are each formed on the buffer layer. Forming a sacrificial layer on the base substrate;
Forming a flexible substrate on the sacrificial layer;
Forming a photochromic layer on the flexible substrate;
Forming a thin film transistor, a gate line and a data line on the photochromic layer;
Forming a pad part connected to any one of the gate line and the data line;
Forming a first electrode on the thin film transistor;
Forming an organic light emitting layer on the first electrode;
Forming a second electrode on the organic light emitting layer;
Irradiating the photochromic layer with a first light source having a first wavelength to discolor the photochromic layer; And
Irradiating the base substrate with a second light source having a second wavelength to separate the base substrate from the flexible substrate; And
And restoring the discolored photochromic layer to its original state. The method of claim 7, wherein
And wherein the first wavelength is larger than the second wavelength. The method of claim 7, wherein
Separating the base substrate,
The method of manufacturing an organic light emitting display device, wherein the photochromic layer is discolored. The method of claim 7, wherein
Forming a photochromic layer on the flexible substrate,
After the photochromic layer is formed on the flexible substrate, the photochromic layer is patterned and positioned in the remaining regions except for regions in which the first electrode, the thin film transistor, the gate line, the data line, and the pad unit are to be formed. And removing the photochromic layer to form an organic light emitting display device. The method of claim 10,
After forming the photochromic layer, further comprising forming a planarization layer on the patterned photochromic layer,
And each of the thin film transistor, the gate line and the data line is formed on the planarization layer. The method according to any one of claims 7 to 9,
After forming the photochromic layer, the method further includes forming a buffer layer on the photochromic layer,
And the thin film transistor, the gate line, and the data line are each formed on the buffer layer.

Images