KR102034070B1 - Apparatus for film delamination and method of fabricating organic electro luminescent device using the same - Google Patents

Abstract

The present invention, the vacuum chamber; A stage located in the vacuum chamber and on which a substrate is mounted; Located on the stage, the first region and the second region on both sides of the second region, the roll is provided with a heating means; It is movable up and down and left and right and provides a detachment device including a fixing means for fixing one end of the film attached on the substrate and a method of manufacturing an organic light emitting device using the same.

Description

Desorption device and manufacturing method of organic EL device using same {Apparatus for film delamination and method of fabricating organic electro luminescent device using the same}

The present invention relates to a desorption apparatus that does not cause foreign matter defects, and a method of manufacturing an organic light emitting device using the same.

Organic electroluminescent devices (FPDs), which are one of flat panel displays (FPDs), have high luminance and low operating voltage characteristics.

In addition, since the organic light emitting device emits light by itself, it has a high contrast ratio, an ultra-thin display, and a response time of several microseconds. There is no limitation and it is stable even at low temperature, and it is easy to manufacture and design a driving circuit because it is driven at a low voltage of DC 5V to 15V.

Therefore, the organic light emitting device having the above-described advantages has been recently used in various IT devices such as TVs, monitors, and mobile phones.

Hereinafter, the basic structure of the organic EL device will be described in more detail.

The organic light emitting device is largely composed of an array device and an organic light emitting diode. The array element includes a switching thin film transistor connected to a gate and a data line, and a driving thin film transistor connected to the organic light emitting diode. The organic light emitting diode includes a first electrode, an organic light emitting layer, and a second electrode connected to the driving thin film transistor. It consists of electrodes.

In the organic light emitting device having such a configuration, light generated from the organic light emitting layer is emitted toward the first electrode or the second electrode to display an image. Such an organic light emitting device is manufactured by a top emission method of displaying an image by using light emitted toward the second electrode in consideration of an aperture ratio and the like.

In the organic electroluminescent device having the above-described configuration, in particular, the organic light emitting layer is formed by a thermal deposition method using a shadow mask made of a metal material.

However, in recent years, the display device has been increasingly large in size, and in order to manufacture a display device having such a large area, an enlargement of equipment becomes essential.

In this case, the shadow mask, which is used to form the organic light emitting layer and has an area larger than the substrate in proportion to the area of the substrate, has a weight of 400 Kg or more, so that the shadow mask is mounted or replaced with another shadow mask to proceed with cleaning. Too much time is required, and the patterning error is severely generated due to sagging even in the progress of the deposition process using the same.

Therefore, in recent years, LITI (Laser Induced Thermal Imaging) technology for forming an organic light emitting layer using a transfer film without a shadow mask has been proposed.

In this LITI technology, the organic light emitting layer on which the organic light emitting layer is to be formed is formed on the organic light emitting layer formed on the transfer substrate by closely attaching the organic light emitting layer to the substrate to be transferred using a transfer substrate having an organic light emitting layer formed on the front surface, and irradiating a laser beam. It is a method of transferring onto a light emitting element substrate.

FIG. 1 is a view illustrating some of the steps of forming an organic light emitting layer of an organic light emitting device using a conventional LITI technology, and illustrates a step of detaching a thermal transfer film from a substrate using a conventional desorption apparatus.

First, although not shown in the drawing, the thermal transfer film 30 is bonded onto the substrate 10 for an organic light emitting element.

At this time, the buffer film 50 in the state where the thermal transfer film 30 and its edge portion are further attached to the lower portion of the organic light emitting device substrate 10.

The heat transfer film 30 and the buffer film 50 are bonded to each other in a vacuum atmosphere through a bonding device (not shown). Attaching the buffer film 50 to the bottom surface of the organic light emitting device substrate 10 is performed by the laser beam irradiation, etc. in an atmosphere of room temperature, not a vacuum atmosphere, and further in the bonding device (not shown) The organic light emitting device substrate 10 must be transferred to an irradiation device (not shown), and furthermore, the laser beam irradiation proceeds in a vacuum atmosphere because of a risk of explosion and the like.

However, in this case, when the substrate 10 and the heat transfer film 30 for the organic light emitting device are exposed to air, the organic light emitting layer 34 provided on the heat transfer film 30 is in contact with the air and the moisture in the air. In order to prevent oxygen and the like from penetrating and deteriorating, the buffer film 50 is further provided to prevent exposure to the air so that the edge portion is bonded to the heat transfer film 30.

On the other hand, the thermal transfer film 30 and the organic light emitting device substrate 10 is bonded to the laser irradiation apparatus (not shown) in a state of bonding, and then irradiated a laser beam on the surface of the thermal transfer film 30. do.

Thereafter, as shown in FIG. 1, the thermal transfer film 30 irradiated with a laser beam and the substrate 10 for an organic light emitting device are transferred to a desorption apparatus 90 having a vacuum chamber, and then the organic field. Desorption of the heat transfer film 30 from the light emitting element substrate 10 is progressing.

The desorption apparatus 90 includes a stage 91, a roll 92, and fixing means 93, such as a suction unit or a jig, which is fixed to one end of the heat transfer film 30. 92 moves in one direction while pressing the heat transfer film 30 through, the direction in which the roll 92 is moved in the fixing means 39 fixed to one end of the heat transfer film 30 By moving along the desorption of the heat transfer film 30 is made.

However, in the process of detaching the heat transfer film 30, in particular, the bonded portions of the heat transfer film 30 and the buffer film 50 are separated by physical force. A transfer material layer made of a material that forms an organic light emitting layer that remains on the thermal transfer film 30 by a large vibration generated in the process of physically separating a state where it falls on the electroluminescent element substrate 10 or is adhesively cured ( 33) As a matter is separated from the pixel area of the substrate 10 for organic light emitting diodes and foreign material is separated, there is a problem of causing unsatisfactory defects in the finally completed organic light emitting diodes.

The present invention has been made to solve the above problems, the present invention is a large size generated during the physical separation between the heat transfer film and the buffer film in the process of detaching the heat transfer film from the substrate for the organic light emitting device using a desorption device. It is an object of the present invention to provide a desorption apparatus capable of suppressing foreign material defects caused by vibration and a method of manufacturing an organic light emitting device using the same.

Desorption apparatus according to an embodiment of the present invention for achieving the above object, a vacuum chamber; A stage located in the vacuum chamber and on which a substrate is mounted; Located on the stage, the first region and the second region on both sides of the second region, the roll is provided with a heating means; It is movable up and down and left and right and includes a fixing means for fixing one end of the film attached on the substrate.

In this case, the first region is made of a non-metal material, the second region is characterized in that the metal material, the non-metal material is characterized in that the rubber or plastic.

In addition, the heating means is characterized in that the hot wire.

A method of manufacturing an organic light emitting diode according to an embodiment of the present invention includes the steps of: forming a first electrode for each pixel region on a substrate on which a display region having a plurality of pixel regions is defined; After placing a buffer film having a thermoplastic material layer on the bottom surface of the substrate on which the first electrode is formed, and placing a heat transfer film having a transfer material layer made of an organic light emitting material on the upper surface, the thermal transfer film and the Adhering a buffer film to the outside of the substrate and simultaneously bonding the thermal transfer film to the substrate; Irradiating a laser beam on top of the thermal transfer film; The substrate irradiated with the laser beam is seated on a stage of the desorption apparatus, and the first region of the roll corresponds to the substrate and the second region corresponds to the thermal transfer film positioned outside the substrate. Forming an organic light emitting layer on the substrate by operating the heating means of the second region to heat the thermoplastic material layer of the buffer film to a glass transition temperature or higher and to desorb the heat transfer film; Forming a second electrode over the display area over the organic emission layer.

In this case, the method may further include forming a buffer pattern overlapping the edge of the first electrode on the substrate before the bonding of the thermal transfer film and the buffer film.

And, the step of detaching the heat transfer film from the substrate and the buffer film, the step of fixing the fixing means of the desorption device to the end of the heat transfer film; Positioning the fixing means above the roll; Moving the roll and the fixing means in the long axis or short axis direction of the substrate.

In addition, the bonding step is characterized in that the thermal pressurization to the thermal transfer film positioned on the outside of the substrate in the vacuum chamber by using a thermal pressing means.

In addition, the heating of the second region of the roll is characterized in that 20 to 30 ℃ higher than the glass transition temperature of the thermoplastic material layer.

In addition, the transfer material layer may form a single layer structure made of an organic light emitting material, or may include a hole injection layer, a hole transporting layer, or an upper portion or a lower portion of the material layer formed of the organic light emitting material. A material layer made of at least one material constituting an electron transporting layer and an electron injection layer is further provided to form a multi-layered structure.

In manufacturing the organic light emitting device using the desorption apparatus according to an embodiment of the present invention, the portion attached between the heat transfer film and the buffer film is heated by the second region of the roll with heating means to form a liquid phase. Or fluidity, so that the adhesive force is about 0.1 kgf / inch, which is about 1/10 of that of the cured state, and thus is easily detached even if less physical force is applied, and vibration occurs in the heat transfer film. It doesn't work.

Therefore, the phenomenon that the foreign material having the component of the transfer material layer provided in the thermal transfer film or the foreign material having the component of the thermoplastic layer falls on the substrate due to the vibration generated when the thermal transfer film is desorbed can be suppressed. Since there is no foreign matter intervening on the substrate for the organic light emitting device, there is an effect of improving the display quality compared to the conventional by suppressing the defect of the foreign matter.

1 is a view showing a part of the step of forming an organic light emitting layer of an organic light emitting device using a conventional LITI technology.
2 is a schematic view of a desorption apparatus according to an embodiment of the present invention.
3A to 3I are step-by-step process steps for manufacturing the organic light emitting device according to the embodiment of the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings.

2 is a schematic view of a detachment apparatus according to an embodiment of the present invention.

As shown, the desorption apparatus 190 according to the embodiment of the present invention is a vacuum chamber 191, the stage 192 is located in the vacuum chamber 191, and the roll located on the stage 192 193 and fixing means 197 for fixing one end of the heat transfer film. In this case, the fixing means 197 is configured to move in the direction in which the roll 193 moves, the fixing means 197 may be a jig provided with a suction means or a clamp.

In the desorption apparatus 190 according to the embodiment of the present invention having such a configuration, the most distinctive feature corresponds to a predetermined width of both ends of the roll 193 is provided with a heating means (not shown), such as a heating wire therein It is to form a configuration that can be heated to a predetermined temperature to the component in contact with this.

That is, the roll 193 has no heating means, and the surface of the roll 193 and the first region 193a and the first region 193a whose surface is similar to the outside temperature, that is, room temperature, are inside the heating means (not shown). H) is provided and is configured as a second region 193b that can be changed to a temperature higher than the room temperature.

At this time, the first region 193a and the second region 193b of the roll 193 is characterized in that the material that forms itself is different. The first region 193a overlapping the substrate (not shown) on the stage 192 is made of a non-metallic material having low thermal conductivity, such as rubber or plastic, and formed at both ends of the first region 193a. The second region 193b is made of a metal material having high thermal conductivity.

On the other hand, each of the second regions 193b is a thermal transfer film exposed to the outside of the organic light emitting diode substrate (not shown) when the substrate for the organic light emitting diode (not shown) is seated on the stage. C) and a buffer film (not shown).

Thus, in the desorption apparatus 190 according to the embodiment of the present invention, the roll 193 is divided into the first and second regions 193a and 193b so that the second region 193b has a heating function. In order to prevent the device substrate (not shown) from being exposed to air, a buffer film (not shown) and a heat transfer film (not shown) are attached, and the buffer film (not shown) and the heat transfer film (not shown) This is for easily detaching the bonded state without vibration.

On the other hand, the fixing means 197 is a substrate (not shown) is mounted on the stage 192 and is fixed to one end of the heat transfer film (not shown) covering the substrate (not shown), so In the state fixed to one end of the heat transfer film (not shown) by pulling one end of the heat transfer film (not shown) in the upper direction to move to the position where the roll 193 is located, the heat transfer film (not shown) And one end of the organic light emitting device substrate (not shown). The fixing means 197 vertically moves up to the upper portion of the roll 193. It is characterized in that the linear movement in the upper portion of the roll 193 in the moving direction of 193.

The heat transfer film (by being pulled by the fixing means 197 in a state supported by the roll 193 on the outer surface of the heat transfer film (not shown) by this movement of the fixing means 197) Not shown) is detached from the substrate (not shown) and the buffer film (not shown).

Hereinafter, a method of manufacturing an organic light emitting diode comprising the step of transferring the organic light emitting layer using the desorption apparatus and the laser irradiation apparatus having the above-described configuration will be described.

3A to 3I are step-by-step process steps for manufacturing an organic light emitting diode according to an embodiment of the present invention. In this case, for convenience of description, the components constituting the organic light emitting device substrate are illustrated together with the drawings, which are not shown. The step of forming the organic light emitting layer by using the thermal transfer film, which is a characteristic configuration of the present invention, Explain mainly.

First, as shown in FIG. 3A, a gate wiring (not shown) and a data wiring defining a pixel region P by crossing each other on a transparent insulating substrate 110, for example, an insulating substrate made of plastic or glass. 130 is formed, and a power line (not shown) parallel to the data line 130 is formed.

In addition, a switching thin film transistor (not shown) connected to the two wires (not shown) is formed in a switching region (not shown) near the intersection of the gate wiring (not shown) and the data wiring 130, and at the same time a driving region ( A driving thin film transistor DTr connected to one electrode of the switching thin film transistor (not shown) is formed in the DA).

In this case, the driving and switching thin film transistors DTr (not shown) may each include a gate electrode 115, a gate insulating layer 118, an oxide semiconductor layer 120, and an etch stopper sequentially stacked from the surface of the substrate 110. 122 and source and drain electrodes 133 and 136 spaced apart from each other on the etch stopper 122 and in contact with the oxide semiconductor layer 120, respectively.

Forming the gate wiring (not shown), the data wiring 130, the power wiring (not shown), and the switching and driving thin film transistor (DTr) on the substrate 110 is a general manufacture of organic light emitting diodes. Since it is the same as the method, detailed description is omitted.

Meanwhile, in the drawings, the driving and switching thin film transistors DTr (not shown) each have a single layer structure and are provided with an oxide semiconductor layer 120 made of an oxide semiconductor material, but the switching and driving thin film transistors are shown as an example. (Not shown, DTr) is a semiconductor layer composed of a gate electrode, a gate insulating film, an active layer of pure amorphous silicon and an ohmic contact layer of impurity amorphous silicon, and a source and drain electrode spaced apart from each other on the semiconductor layer. It may be formed to have.

In addition, although the switching and driving thin film transistor DTr (not shown) shows a bottom gate structure in which the gate electrode is located at the bottom, the semiconductor layer is positioned at the bottom and has a top gate structure in which the gate electrode is formed thereon. It may be formed.

That is, the switching and driving thin film transistor (DTr) may be formed to have a top gate structure by including a polysilicon semiconductor layer at a lowermost portion of the substrate.

In this case, each of the switching and driving thin film transistors (DTr) may include a polysilicon semiconductor layer including an active region of pure polysilicon on the substrate and a source and drain region of polysilicon doped with impurities on both sides thereof; An interlayer insulating film having a gate insulating film, a gate electrode formed to overlap the active region, a semiconductor layer contact hole exposing the source and drain regions, respectively, and contacting the source and drain regions through the semiconductor layer contact hole, respectively. And may have a stacked structure of source and drain electrodes spaced apart from each other.

When the driving and switching thin film transistor DTr (not shown) forms a top gate structure, an interlayer insulating film is further provided in comparison with a bottom gate structure, a gate wiring is provided on the gate insulating film, and the data wiring 130 is It is formed on an interlayer insulating film.

Next, a protective layer 140 having a flat surface is formed on the switching and driving thin film transistor (DTr) by including an organic insulating material, for example, photoacrylic, and the patterning process is performed by patterning the protective layer 140. A drain contact hole 143 exposing the drain electrode 136 of the thin film transistor DTr is formed.

Thereafter, a transparent conductive material having a relatively large work function value, for example, indium tin oxide (ITO), is deposited on the passivation layer 140 including the drain contact hole 143, or a metal material having excellent reflectance. Aluminum (Al) or aluminum alloy (AlNd) is first deposited, and then the indium-tin-oxide (ITO) is deposited thereon, and a mask process is performed to pattern the drain contact hole for each pixel region P. A first electrode 150 is formed to contact the drain electrode 136 of the driving thin film transistor DTr through 143.

In this case, when a metal material having excellent reflectance is deposited, a reflective layer (not shown) is further formed below the first electrode 150.

On the other hand, when the reflective layer (not shown) is formed below the first electrode 150, the light emitted from the organic light emitting layer 155 formed on the first electrode 150 is the reflection layer (not shown) By reflecting through and reflected upward, the utilization efficiency of the emitted light is increased to have an effect of finally improving luminance characteristics.

Next, as shown in FIG. 3B, the gate line (not shown) and the data line are disposed on the edge of the protective layer 140 and the first electrode 150 exposed to the outside of the first electrode 150. In other words, the buffer pattern 153 is formed at the boundary of each pixel region P.

The buffer pattern 153 captures each pixel region P, and the first electrode 150 is exposed in the pixel region P surrounded by the buffer pattern 153.

The buffer pattern 153 is formed to prevent a short between the second electrode (not shown) and the first electrode 153 to be formed later, and the organic light emitting layer is formed by a transfer method using a thermal transfer film. The organic light emitting diode according to the exemplary embodiment of the present invention may be omitted when the organic light emitting layer (not shown) is formed to completely cover the first electrode 150.

Next, as illustrated in FIG. 3C, a substrate having a buffer pattern 153 formed on the boundary between the first electrode 150 and the pixel region P and overlapping the edge of the first electrode 150. The 110 is moved into the vacuum chamber 200 of the bonding apparatus.

In this case, a stage 205 is provided in the vacuum chamber 200 of the bonding apparatus, and a buffer film 250 is prepared on the stage 205 to form a seated state, and on the buffer film 250. The substrate 110 is seated.

The buffer film 250 has a larger area than the substrate 110, and the predetermined width of the edge of the buffer film 250 is exposed to the outside of the substrate 110 while the substrate 110 is seated. Is achieved.

Meanwhile, the buffer film 250 is made of, for example, a PET material and has a base film 252 having a thickness of about 125 to 150 μm and a thermoplastic polymer material on the entire surface of the base film 252, for example, EVA (ethylene vinyl). It is characterized in that the thermoplastic material layer 254 made of acetate or polyethylene and having a thickness of about 50 to 75 μm is provided.

The thermoplastic material layer 254 is formed in order to be bonded to the heat transfer film during the bonding process. In this case, an adhesion reinforcing layer (not shown) may be further provided between the thermoplastic material layer 254 and the base film 252 to enhance adhesion between the thermoplastic material layer 254 and the base film 252. have.

Meanwhile, in the buffer film, the thermoplastic material layer 254 is formed on the base film 252 to have a thickness of about 50 to 75 μm, so that the thickness of the thermoplastic material layer 254 is thinner than 50 μm. In this case, there is a problem that the adhesive strength is lowered, when the thickness is greater than 75㎛ takes a relatively long heating time for making the thermoplastic material layer 254 above the glass transition temperature, and the buffer film 250 when heated above the glass transition temperature This is to prevent such a problem from occurring because it causes a problem of contaminating the stage of the desorption apparatus by flowing outward.

As illustrated in FIG. 3D, the thermal transfer film 230 is seated on the buffer film 250 so as to contact the substrate 110 on the substrate 110. In this case, the thermal transfer film 230 also has a larger area than the substrate 110 and is in contact with the surface of the buffer film 250 exposed to the outside of the substrate 110.

The thermal transfer film 230 has a base supporting film 232 and a photothermal conversion layer 234 formed on the entire inner surface of the supporting film 232, and is transferred to the entire surface above the photothermal conversion layer 234. The material layer 236 is formed.

In this case, the transfer material layer 236 may be a single layer or a plurality of layers.

In an exemplary embodiment of the present invention, the transfer material layer 236 may be an organic light emitting material layer having a single layer structure composed of an organic light emitting material alone.

Furthermore, a hole injection material layer (not shown), a hole transporting material layer (not shown), an electron transport material layer (not shown), and electrons may be disposed on the upper or lower portions of the organic light emitting material layer to maximize luminous efficiency. One or more material layers of the electron injection layer may be further configured.

In the drawing, the transfer material layer 236 is formed of an organic light emitting material layer having a single layer structure as an example.

Next, as shown in 3e, the heat pressing means 210 located above the stage 205 with the heat transfer film 230 seated on the substrate 110, for example, a heating bar. The thermal transfer film 230 and the buffer film 250 exposed to the outside of the substrate 110 are adhered by performing thermal pressurization using the heat treatment.

The thermal pressurizing means 210 has a shape that borders the substrate 110 to the outside of the substrate 110 and heat-presses in contact with the heat transfer film 230 exposed to the outside of the substrate 110. Heat is supplied to the thermoplastic material layer 254 provided in the film 250.

In this case, the thermoplastic material layer 254 instantaneously changes the heat-pressurized portion from a solid state to a high viscosity liquid or gel state by the heat supplied by the heat pressurizing means 210, and in this process It has an adhesive force, thereby adhering to the heat transfer film 230. In this state, when the heat pressurizing means 210 is removed, it is hardened to have a strong adhesive force, and the buffer film 250 and the heat transfer substrate 110 have a state in which the substrate 110 is sealed.

On the other hand, it can be seen through the measurement that the adhesive force between the thermal transfer film 230 and the buffer film 250 is about 1kgf / inch in the state that the thermoplastic material layer 254 is cured.

Meanwhile, in this process, the transfer material layer 236 of the thermal transfer film 230 is in contact with the first electrode 150 on the substrate 110.

Next, as shown in 3e, the edges of the thermal transfer film 230 and the buffer film 250 are bonded to each other and the substrate 110 in a state of being sealed in these two films 230 and 250 is laser irradiated. After moving to (not shown) is mounted on the stage 270 of the laser irradiation device (not shown).

At this time, since the substrate 110 is sealed between the buffer film 250 and the heat transfer film 230, the substrate 110 is moved into the laser irradiation apparatus (not shown) inside the vacuum chamber (200 of FIG. 3D) of the bonding apparatus. Even when exposed to the atmosphere during the transfer process, the transfer material layer 236 provided in the thermal transfer film 230 is not exposed to air.

Thereafter, the thermal transfer film 230 is formed through the beam generator 275 above the thermal transfer film 230 with respect to the substrate 110 mounted on the stage 270 of the laser irradiation apparatus (not shown). The laser beam LB is selectively irradiated toward the surface of the.

That is, the laser beam LB is irradiated in correspondence with the pixel region P to be transferred on the transfer material layer 236 of the thermal transfer film 230.

In the case of the organic light emitting device, since the organic light emitting layer emitting red, green, and blue light must be selectively provided for each pixel region P, when the transfer material layer 236 includes the organic light emitting material layer emitting red color, the red color is red. The laser beam LB is irradiated corresponding to the pixel region P to emit light.

In this case, the photothermal conversion layer 234 in the thermal transfer film 230 generates heat by converting light energy of the laser beam LB into thermal energy in a portion where the laser beam LB is irradiated, thereby generating the photothermal conversion layer 234. Adhesiveness of the transfer material layer 236 attached to the surface is removed, and further, the transfer material layer 236 is in a state of being adhered to the first electrode on the substrate 110.

Next, as shown in FIG. 3F, after the laser beam (LB of FIG. 3E) irradiation transfers the completed substrate 110 to the detachment apparatus through the laser irradiation apparatus (not shown), the detachment apparatus 190 may be removed. It is seated on the stage 192 inside the vacuum chamber 191.

Thereafter, the fixing means 197 of the desorption apparatus 191 is fixed to one end of the heat transfer film 230, and the first region 193a and the second region 193b provided with a heating means (not shown). A roll 193 made of) is placed on and in contact with the heat transfer film 230.

At this time, the second region 193b of the roll 193 is in contact with the portion of the heat transfer film 230 exposed to the outside of the substrate 110, and the heating means provided in the second region 193b is used. The heat transfer film 230 is heated by operating.

In this case, the second region 193b of the roll has a glass transition temperature at which its surface temperature is in a state in which the thermoplastic material layer 254 is flowable. More preferably 20 to 30 ° C. higher than the glass transition temperature of the thermoplastic material layer 254.

Thereafter, the roll 193 is gradually moved in one direction (the short axis or the long axis direction of the substrate 110) and the fixing means 197 is moved in the normal direction of the surface of the substrate 110. And move the upper portion of the roll 193 together with the roll 193 in a moving direction of the roll 193 to detach and attach the thermal transfer film 230 and the buffer film 250 to each other. It is to be detached from the surface of the substrate 110.

When the desorption of the heat transfer film 230 is performed by the above-described method, the portion attached between the heat transfer film 230 and the buffer film 250 may be formed by the heating unit (not shown) of the roll 193. Heated by the second region 193b to form a liquid or fluid gel state, so that the adhesive force is about 0.1 kgf / inch, which is about 1/10 of that of the hardened state, and thus is easily detached even if less physical force is applied. Further, vibration is not generated even in the heat transfer film 230 which is detached.

Therefore, a foreign material having a component of the transfer material layer 236 provided in the thermal transfer film 230 or a foreign substance having a component of the thermoplastic material layer 254 is caused by vibration generated when the thermal transfer film 230 is desorbed. The phenomenon of falling onto the substrate 110 can be suppressed, thereby preventing foreign matters from interfering on the substrate 110, thereby reducing stain defects caused by foreign substances, thereby improving display quality.

When the thermal transfer film 230 is detached from the substrate 110 as described above, the transfer material layer 236 corresponding to the portion to which the laser beam is irradiated is attached to the substrate 110 and thus the substrate 110. The transfer material layer 236 transferred onto the substrate 110 forms an organic emission layer 155.

In this case, when the transfer material layer 236 is formed of a plurality of layers, the organic light emitting layer 155 transferred on the substrate 110 may be a hole injection layer sequentially from the top of the first electrode 150. Or a five-layer structure of a hole transporting layer, an organic emitting material layer, an electron transporting layer and an electron injection layer, or a hole transporting layer. layer, an organic light emitting material layer, an electron transporting layer, and an electron injection layer may be a quadruple structure, and furthermore, a hole transporting layer, an organic light emitting material A triple layer structure of an emitting material layer and an electron transporting layer may be achieved.

Next, as illustrated in FIG. 3G, the transfer step of the above-described heat transfer film for the heat transfer film 230 made of an organic light emitting material that emits green and blue light in the transfer material layer is changed. By repeating the laser beam irradiation step and the desorption step of the thermal transfer film using the desorption apparatus according to the present invention, the organic light emitting red, green, and blue light is sequentially repeated on the substrate 110 sequentially for each pixel region P. The light emitting layer 155 is formed.

Next, as shown in FIG. 3H, a metal material having a relatively low work function on the organic light emitting layer 155, for example, aluminum (Al), aluminum alloy (AlNd), silver (Ag), magnesium (Mg), and gold (Au) and one or two or more of aluminum magnesium alloy (AlMg) are mixed and deposited on the entire display area to form a second electrode 160, thereby forming the substrate 110 for an organic light emitting device according to an embodiment of the present invention. To complete.

In this case, the first electrode 150, the organic light emitting layer 155, and the second electrode 160 sequentially stacked in each pixel area P form the organic light emitting diode E by the aforementioned method.

Next, as shown in FIG. 3I, a counter substrate 170 made of a transparent material is positioned to encapsulate the organic light emitting diode E, corresponding to the substrate 110 on which the second electrode is formed. A face seal (not shown) made of any one of a frit, an organic insulating material, and a polymer material is coated on the entire surface of the substrate 110 between the substrate 110 and the counter substrate 170. In one state, the substrate 110 and the counter substrate 170 are bonded to each other, or a seal pattern (not shown) is formed along the edge of the substrate 110 in a vacuum or inert gas atmosphere and then the substrate 110 and the substrate 110. By bonding the opposing substrate, the organic light emitting diode 100 according to the exemplary embodiment of the present invention is completed.

Meanwhile, the encapsulation film may be deposited by depositing or applying an inorganic insulating material or an organic insulating material on the second electrode 160 of the substrate 110 or by attaching a film (not shown) by resuming an adhesive layer (not shown). When used as (not shown), the counter substrate 170 may be omitted.

The present invention is not limited to the above-described embodiments and modifications, and various modifications can be made without departing from the spirit of the present invention.

110: substrate
155: organic light emitting layer
190: detachable device
191: vacuum chamber
192: Stage
193: roll
193a, 193b: first and second region (of roll)
193: fixing means
230: heat transfer film
232: support film
234: photothermal conversion layer
236: transfer material layer
250: buffer film
252: Base Film
254: thermoplastic material layer

Claims (14)

delete delete delete delete A vacuum chamber; A stage located in the vacuum chamber and on which a substrate is mounted; Located on the stage, the first region and the second region on both sides of the second region, the roll is provided with a heating means; In the method of manufacturing an organic light emitting device using a desorption device that can move vertically and horizontally and includes a fixing means for fixing one end of the film attached to the substrate,
Forming a first electrode for each pixel region on a substrate on which a display region having a plurality of pixel regions is defined;
After placing a buffer film having a thermoplastic material layer on the bottom surface of the substrate on which the first electrode is formed, and placing a heat transfer film having a transfer material layer made of an organic light emitting material on the upper surface, the thermal transfer film and the Adhering a buffer film to the outside of the substrate and simultaneously bonding the thermal transfer film to the substrate;
Irradiating a laser beam on top of the thermal transfer film;
The substrate irradiated with the laser beam is seated on a stage of the desorption apparatus, and the first region of the roll corresponds to the substrate and the second region corresponds to the thermal transfer film positioned outside the substrate. Forming an organic light emitting layer on the substrate by operating the heating means of the second region to heat the thermoplastic material layer of the buffer film to a glass transition temperature or higher and to desorb the heat transfer film;
Forming a second electrode over the display area over the organic emission layer
Method for manufacturing an organic light emitting device comprising a.
The method of claim 5,
And forming a buffer pattern overlapping the edge of the first electrode on the substrate before the bonding of the thermal transfer film and the buffer film.
The method of claim 5,
Desorption of the heat transfer film from the substrate and the buffer film,
Fixing the fixing means of the desorption apparatus to one end of the heat transfer film;
Positioning the fixing means above the roll;
The method of manufacturing an organic light emitting device comprising the step of moving the roll and the fixing means in the long axis or short axis direction of the substrate.
The method of claim 5,
The bonding step is a method of manufacturing an organic light emitting device, characterized in that the thermal pressing by the thermal pressing means for the thermal transfer film located on the outside of the substrate in the vacuum chamber.
The method of claim 5,
And heating the second region of the roll is 20 to 30 ° C. higher than the glass transition temperature of the thermoplastic material layer.
The method of claim 5,
The transfer material layer forms a single layer structure made of an organic light emitting material,
Alternatively, any one of a hole injection layer, a hole transporting layer, an electron transporting layer, and an electron injection layer may be formed above or below the material layer formed of the organic light emitting material. A method of manufacturing an organic light emitting device, characterized in that a material layer made of one or more materials is further provided to form a plurality of layers. The method of claim 5,
And the first region is made of a material having a first thermal conductivity, and the second region is made of a material having a second thermal conductivity greater than the first thermal conductivity.
The method of claim 5,
The first region is made of a non-metal material, the second region is a method of manufacturing an organic light emitting device, characterized in that the metal material.
The method of claim 2,
The non-metallic material is a method of manufacturing an organic light emitting device, characterized in that the rubber or plastic.
The method of claim 5,
The heating means is a method of manufacturing an organic light emitting device, characterized in that the hot wire.

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