KR102027290B1 - Maskless exposure apparatus - Google Patents
Maskless exposure apparatus Download PDFInfo
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- KR102027290B1 KR102027290B1 KR1020130008926A KR20130008926A KR102027290B1 KR 102027290 B1 KR102027290 B1 KR 102027290B1 KR 1020130008926 A KR1020130008926 A KR 1020130008926A KR 20130008926 A KR20130008926 A KR 20130008926A KR 102027290 B1 KR102027290 B1 KR 102027290B1
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
- G03F7/70116—Off-axis setting using a programmable means, e.g. liquid crystal display [LCD], digital micromirror device [DMD] or pupil facets
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70283—Mask effects on the imaging process
- G03F7/70291—Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/70508—Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
The present invention is a light source for emitting light; A DMD array unit having mirror pixels for reflecting the light emitted from the light source unit to a stage on which the substrate is seated or to the outside; A DMD control unit which supplies a control signal to the DMD array unit and transmits a data file having an image to be exposed; And a light modulator for guiding and irradiating light reflected from the micromirror element array in a direction in which the substrate is positioned, wherein the DMD array part is a transmission part for transmitting light, a non-transmission part for transmitting light, and a half for selectively transmitting light. The mirror pixel of the DMD array unit defined by the transmissive portion and the region corresponding to the transflective portion provides a maskless exposure apparatus, wherein a turn-on / turn-off operation is varied for each frame.
Description
The present invention relates to a maskless exposure apparatus.
With the development of information technology, the market for a display device, which is a connection medium between a user and information, is growing. Accordingly, flat panel displays (FPDs), such as liquid crystal displays (LCDs), organic light emitting diodes (OLEDs), and plasma display panels (PDPs), may be used. Usage is increasing.
In the display device described above, a complicated circuit pattern is formed in a process of manufacturing a substrate or the like. In order to form a circuit pattern, the photolithography method is used a lot. The photolithography method proceeds by forming a photoresist film on a substrate and exposing the photoresist film using a photo mask on which a transfer pattern corresponding to a circuit pattern is formed. Therefore, the photo mask must be made very precisely. However, in the photolithography method, as the photomask for exposing the substrate is also enlarged in addition to the enlargement of the display device, cost and management difficulties arise.
Thus, in recent years, a maskless exposure apparatus that digitally transfers an exposure beam and controls on / off in correspondence with each pixel region of a pattern has been attracting attention. The maskless exposure apparatus forms a pattern through a method of transferring the light reflected by the micromirror device (DMD) array unit to the substrate. The DMD array unit converts a graphic data system file (GDS) and operates along a data file made of an electrical signal.
The data file is made into an image (eg, a bitmap) in the form of a frame by comparing the pixel position of the DMD array unit with the graphic data system file. At this time, the data file is generated corresponding to all the pixels so that the mirror of the DMD array unit is On when the pixels of the DMD array unit are overlapped with the exposure pattern, and is off when the pixels of the DMD array unit are not overlapped.
Meanwhile, the conventional maskless exposure apparatus uses a method of inserting an auxiliary pattern into an image constituting a data file when the exposure amount needs to be adjusted in only a portion of a pattern region. However, the method of using the auxiliary pattern should only play an auxiliary role in the surrounding imaging area. Therefore, the method of using the auxiliary pattern is required to form the auxiliary pattern smaller than the resolution of the image forming area, which is required to improve the bar is subject to various restrictions.
The present invention for solving the above problems of the background technology can simplify the exposure process for semiconductor and flat panel display devices to improve the cost competitiveness by reducing investment and cost, and can manufacture products of high resolution through the application of fine process It is to provide a maskless exposure apparatus.
The present invention as a problem solving means described above is a light source for emitting light; A DMD array unit having mirror pixels for reflecting the light emitted from the light source unit to a stage on which the substrate is seated or to the outside; A DMD control unit which supplies a control signal to the DMD array unit and transmits a data file having an image to be exposed; And a light modulator for guiding and irradiating light reflected from the micromirror element array in a direction in which the substrate is positioned, wherein the DMD array part is a transmission part for transmitting light, a non-transmission part for transmitting light, and a half for selectively transmitting light. The mirror pixel of the DMD array unit defined by the transmissive portion and the region corresponding to the transflective portion provides a maskless exposure apparatus, wherein a turn-on / turn-off operation is varied for each frame.
The DMD controller configures all the frame images constituting the data file into at least two sub-frame images, and the turn-on / turn-off operation of the mirror pixels of the DMD array portion defined as the regions corresponding to the transflective portions in each sub-frame image is performed. It can be controlled to vary by frame.
A mirror pixel of the DMD array unit defined as an area corresponding to the transflective unit may have a variable turn-on / turn-off period for each frame.
A mirror pixel of the DMD array unit defined as an area corresponding to the transflective unit may be turned on or off in a frame-by-frame manner.
The mirror pixels of the DMD array unit defined as regions corresponding to the transflective unit may have a variable number of turned on / off per frame.
The mirror pixel of the DMD array unit defined as an area corresponding to the transflective unit may alternately turn on and off at least one frame section.
The mirror pixels of the DMD array unit defined as regions corresponding to the transflective unit may be moved or alternately spaced apart from each other by at least one or more mirror pixels at positions of being turned on and off at least one frame section.
The mirror pixels of the DMD array unit defined as regions corresponding to the transflective units may be moved or alternated in pairs of at least one mirror pixel, each of which is turned on and off at least one frame section.
One or more of a period, a position, and a number of mirror pixels of the DMD array unit, which are defined as regions corresponding to the transflective unit, are turned on / off for each frame.
The transflective portion may be adjusted in a range of 0% to 100% as one or more of the turn-on / turn-off period, position, and number of mirror pixels of the DMD array portion defined as regions corresponding to the transflective portion are varied.
The present invention has the effect of improving the cost competitiveness by reducing the investment and cost by simplifying the exposure process for the semiconductor and flat panel display. In addition, the present invention has the effect of producing a high resolution product through the application of a fine process that can be applied to a finer process than the prior art.
1 is a configuration diagram for schematically illustrating a maskless exposure apparatus according to an embodiment of the present invention.
2 is a view for explaining an auxiliary pattern insertion method used in a conventional maskless exposure apparatus.
3 is a view for schematically explaining an exposure concept of a maskless exposure apparatus according to an embodiment of the present invention.
4 shows a pattern formed by the method of FIG. 3;
FIG. 5 is a graph illustrating transmittance simulation results according to the method of FIG. 3. FIG.
6 to 8 are views for explaining a maskless exposure apparatus according to a first embodiment of the present invention in detail.
9 and 10 are diagrams for describing in detail a maskless exposure apparatus according to a second embodiment of the present invention.
Hereinafter, with reference to the accompanying drawings, the specific content for the practice of the present invention will be described.
BACKGROUND OF THE
1 is a configuration diagram for schematically illustrating a maskless exposure apparatus according to an exemplary embodiment of the present invention, and FIG. 2 is a view for explaining an auxiliary pattern insertion method used in a conventional maskless exposure apparatus.
As shown in FIG. 1, the maskless exposure apparatus includes a
The
The
The
The DMD array unit DMD has mirror pixels that reflect the light L emitted from the
When the DMD array unit DMD is turned on, the light L emitted from the
The
The
The
When the reflected light is projected onto the
In the above description, only one DMD array unit (DMD) is illustrated and the exposure method of the
Meanwhile, the conventional maskless exposure apparatus needs to insert the auxiliary pattern DP into the main pattern MP of the image IMG constituting the data file as shown in FIG. 2. The auxiliary pattern DP serves to block light. However, the method of using the auxiliary pattern DP has various limitations due to the following problem.
First, the size of the auxiliary pattern DP can be set only within the limit resolution range of the exposure apparatus. For example, when the size of the auxiliary pattern DP is larger than the limit resolution, an unwanted pattern is formed on the substrate. Second, the position of the auxiliary pattern DP should be separated from the surrounding main pattern MP by a predetermined distance or more. For example, when the auxiliary pattern DP and the main pattern MP are not separated by a predetermined distance or more, the two patterns are recognized as a connected bridge, thereby forming an unwanted pattern on the substrate. Due to the above two limitations, the auxiliary pattern DP cannot be inserted in the desired position or the number of insertions is limited. An example of this will be described in detail below.
2 illustrates a portion of a pattern included in a thin film transistor included in a subpixel of a liquid crystal display panel or an organic light emitting display panel. As can be seen from the drawing, ① If the main pattern (MP) is formed in a straight line like the region, the constraint is less when inserting the auxiliary pattern (DP), but (2) The main pattern (MP) is formed in the inclined form like the region If there is a lot of constraints when inserting the auxiliary pattern (DP). As described above, the conventional method has a disadvantage in that it is impossible to form a uniform semi-transmissive film because the exposure amount for each region is changed according to constraints when inserting the auxiliary pattern DP.
In order to solve and improve the above problems, the present invention does not use an auxiliary pattern (DP), and the semi-permeable membrane is formed by gray-scaleing the transmission amount through on / off control of each DMD array unit (DMD). This is described below. However, reference is also made to FIG. 1 to help understand the description.
3 is a view for schematically explaining the exposure concept of a maskless exposure apparatus according to an embodiment of the present invention, Figure 4 is a view showing a pattern formed by the method of Figure 3, Figure 5 is a method of Figure 3 It is a graph of the transmittance simulation results.
In the maskless exposure apparatus according to the embodiment of the present invention, the DMD array unit DMD is turned on / off by a data file. However, the auxiliary pattern DP is not inserted into the main pattern MP of the image constituting the data file.
Instead, as illustrated in FIG. 3, the transmissive part FT, the non-transmissive part NT, and the transflective part HT are defined for the mirror pixels of the DMD array part DMD, and a part of the transflective part HT is defined. Different ON / OFF operation. To this end, a control signal for controlling the mirror pixels of the DMD array unit DMD may be changed for each frame, but is not limited thereto.
For example, the mirror pixels D, E, and F of the DMD array unit DMD defined as regions corresponding to the transmissive unit FT are controlled to be turned on during all frames. In addition, the mirror pixels G, H, and I of the DMD array unit DMD defined as regions corresponding to the non-transmissive portion NT are controlled to be turned off during all frames. On the other hand, the mirror pixels A, B, and C of the DMD array unit DMD defined as an area corresponding to the transflective unit HT are one of a period, a position, or a number of turns on / off per frame. The abnormality is controlled to vary.
Meanwhile, in the drawing, three mirror pixels A to C, D to F, and G to I of the DMD array unit DMD corresponding to each of the transmissive unit FT, the non-transparent unit NT, and the transflective unit HT are three. Although shown, they are arranged in M pieces (M being an integer of 1 or more). However, in the following description, for convenience of illustration and illustration are shown in three or four.
When the mirror pixels A to I of the DMD array unit DMD are controlled in the above manner, the amount of light L transmitted to the region corresponding to the transflective unit HT is changed. Therefore, the pattern PTN made of photoresist or the like has different exposure states for each of the transmissive portion FT, the non-transmissive portion NT, and the transflective portion HT.
When the pattern PTN is exposed and developed by using the same method as in the embodiment, as shown in FIG. 4, all regions corresponding to the transmissive portion FT are removed, and regions corresponding to the non-transmissive portion NT remain. The region corresponding to the transflective portion HT may form a structure from which a portion is removed. 4 illustrates that the transmittance of the transflective portion HT is set to 40%.
As described above, the transflective portion HT plays the same role as the conventional auxiliary pattern DP. However, the method according to the embodiment adjusts the amount of transmission of the portion corresponding to the region while leaving the main pattern MP of the image constituting the data file so that the step of inserting the auxiliary pattern DP can be eliminated. All constraints will be addressed and improved.
By using the same method as in the embodiment, the mirror pixels A, B, and C of the DMD array unit DMD defined as regions corresponding to the transflective unit HT are turned on / off for each frame. One or more of the period, location, and number of times may vary. Therefore, the transmission amount of the transflective portion HT can be adjusted by gray scale (Gray scale) as shown in FIG. Since the transmissive amount of the transflective portion HT is varied by one or more of the period, position and number of turning on / off the mirror pixels A, B, and C of the DMD array portion DMD, the variable amount is variable. It may be set in various ways, such as 40%, 50%, 60%, and the like.
Hereinafter, a maskless exposure apparatus according to an embodiment of the present invention will be described in more detail. However, in order to help the understanding of the description, reference is made to FIGS. 1 and 3 to 5 together.
<First Embodiment>
6 to 8 are views for explaining a maskless exposure apparatus according to a first embodiment of the present invention in detail.
In the maskless exposure apparatus, an image constituting a data file is composed of a plurality of frames. The frame image FI is not limited to FIG. 6 but is composed of tens, thousands, tens of thousands, or the like. However, in the first embodiment of the present invention, only a part thereof is shown for better understanding of the description.
According to the first embodiment of the present invention, the frame image FI is divided into two frames of the first sub frame image SFI _1 and the second sub frame image SFI_2. For example, if the number of frame images FI is 10, 1 to 5 frame images Fn + 1 to Fn + 5 become first sub frame images SFI _1 and 6 to 10 frame images Fn + i to Fn. + m) becomes the second sub frame image SFI_2. In the drawing, the frame image FI is arranged as discontinuously, but as described above, 10 is taken as an example and should be interpreted as being continuously arranged.
As described above, the first embodiment of the present invention defines a frame so that a plurality of frame images Fn + 1 to Fn + 5 and Fn + i to Fn + m can be used as one frame image FI. When the frame image is defined in this way, the mirror pixels of the DMD array unit (DMD) can be selectively turned on (ON) / off (OFF) for each frame, thereby increasing the degree of freedom. That is, the mirror pixels of the DMD array unit DMD located at a specific address can be turned on / off several times.
Then, the mirror pixels D, E, and F of the DMD array unit DMD defined as regions corresponding to the transmissive unit FT are controlled to be turned on for all frames. In addition, the mirror pixels G, H, and I of the DMD array unit DMD defined as regions corresponding to the non-transmissive portion NT are controlled to be turned off during all frames. On the other hand, the mirror pixels A, B, and C of the DMD array unit DMD defined as regions corresponding to the transflective unit HT are controlled to vary in turn-on / turn-off periods for each frame.
To this end, the
For example, as shown in FIG. 7, the mirror pixel of the DMD array unit DMD defined as a region corresponding to the transflective unit HT has a turn on / off period varying for each frame. In this case, the mirror pixels of the DMD array unit DMD of the transflective unit HT may be alternately turned on and turned off one frame interval, but the present invention is not limited thereto.
As another example, as shown in FIG. 8, the mirror pixel of the DMD array unit DMD defined as an area corresponding to the transflective unit HT has a turn on / off period for each frame. In this case, the mirror pixels of the DMD array unit DMD of the transflective unit HT may be alternately turned on and off by two frame sections, but is not limited thereto.
As can be seen in the above example, it can be seen that the mirror pixels of the DMD array unit DMD of the transflective unit HT may be alternately turned on and off at least one frame interval.
On the other hand, the mirror pixel of the DMD array unit (DMD) defined as the area corresponding to the transflective unit (HT) in the above process is changed in the ON / OFF (OFF) period, so the characteristics thereof will be changed as follows. Can be.
For example, when all the mirror pixels of the DMD array unit DMD turn on during all five frame periods, the transmittance is 100%. That is, the same conditions as in the transmission portion FT. On the contrary, when the mirror pixel of the DMD array unit DMD turns on four times and performs one turn-off operation for five frame periods, the mirror pixel of the DMD array unit DMD shows an 80% transmission amount. On the contrary, when the mirror pixel of the DMD array unit DMD turns on three times and turns off twice during five frame periods, the transmittance is 60%. On the contrary, when the mirror pixel of the DMD array unit DMD turns on twice and turns off three times during five frame periods, the transmittance is 40%. On the contrary, when the mirror pixel of the DMD array unit DMD turns on once and turns off four times during the five frame periods, the transmittance is 20%. On the contrary, when all the mirror pixels of the DMD array unit DMD turn off during 5 frame periods, the transmittance is 0%. That is, the same conditions as the non-transmissive portion NT are obtained.
Therefore, the transflective portion HT is controlled to have a transmittance in the range of 0% to 100% as the turn-on / turn-off period of the mirror pixel of the DMD array portion DMD defined as the region corresponding to the transflective portion HT is varied. .
According to the first embodiment of the present invention, since five frame images are grouped into one sub-frame image unit, the mirror pixels of the DMD array unit DMD have a turn-on / turn-off degree of freedom for five. It is possible to form five gray scales. If N (N is an integer greater than or equal to 5) frame images are grouped into one subframe image unit, the transmissive amount can be controlled in the transflective portion HT, so that the transmissive amount can be finely controlled. .
Second Embodiment
9 and 10 are diagrams for describing in detail a maskless exposure apparatus according to a second embodiment of the present invention.
The second embodiment of the present invention is another example for forming the gray scale. In the second embodiment of the present invention, a plurality of mirror pixels of the DMD array unit DMD defined as regions corresponding to the transflective unit HT are bundled together to turn on / off like a single mirror pixel. In operation, at least one of a position and a number at which each mirror pixel is turned on / off is changed for each frame.
For example, as illustrated in FIG. 9, the mirror pixel of the DMD array unit DMD defined as an area corresponding to the transflective unit HT has a variable turn-on and turn-off position per frame. do. In this case, the mirror pixels of the DMD array unit DMD of the transflective unit HT may be moved or alternately spaced apart by two mirror pixels at positions of turning on and turning off by one frame interval. Rather than three mirror pixels may be moved or alternating.
As another example, as shown in FIG. 10, the mirror pixel of the DMD array unit DMD defined as an area corresponding to the transflective unit HT has a variable turn-on position and turn-off position per frame. do. In this case, the mirror pixels of the DMD array unit DMD of the transflective unit HT may be moved or alternated in pairs of two mirror pixels at positions of being turned on and turned off every two frame sections. It is not limited and may move or alternating in pairs of three or more mirror pixels.
Meanwhile, in the drawings, only the positions of the mirror pixels of the DMD array unit DMD are moved or alternating, but only the number of mirror pixels of the DMD array unit DMD is changed or the position and the number may be changed together.
According to the first embodiment of the present invention, since four mirror pixels of the DMD array unit (DMD) are formed and the turn-on / turn-off degrees of freedom are three, four gray scales can be formed. do. If the mirror pixels of the DMD array unit DMD are formed of X (X is an integer greater than or equal to 1), gray scales are formed as much as X, and thus the transmission amount can be further finely adjusted.
Meanwhile, according to the first and second embodiments of the present invention, a period and a position at which the mirror pixels of the DMD array unit DMD defined as regions corresponding to the transflective unit HT by combining them are turned on / off for each frame. And the number may be controlled to vary.
By forming a semi-transmissive portion in the same manner as in the present invention, and using a method of adjusting the gray scale thereof, it is possible to easily form a uniform semi-transmissive layer, which has been difficult to implement in the past. As a result, the present invention can simplify the exposure process for semiconductor and flat panel display devices, leading to improved cost competitiveness by reducing investment and cost. In addition, the present invention can be applied to a finer process than the prior art even if performing the same process, it is possible to manufacture a high resolution product through the application of a fine process.
Although the embodiments of the present invention have been described above with reference to the accompanying drawings, the technical configuration of the present invention described above may be modified in other specific forms by those skilled in the art to which the present invention pertains without changing its technical spirit or essential features. It will be appreciated that it may be practiced. Therefore, the embodiments described above are to be understood as illustrative and not restrictive in all aspects. In addition, the scope of the present invention is shown by the claims below, rather than the above detailed description. Also, it is to be construed that all changes or modifications derived from the meaning and scope of the claims and their equivalent concepts are included in the scope of the present invention.
140: light source unit 150: absorption unit
DMD: DMD array unit 130: optical modulator
120: DMD control unit HT: transflective unit
FT: transmission part NT: non-transmission part
Claims (10)
A DMD array unit having mirror pixels for reflecting the light emitted from the light source unit to a stage on which the substrate is mounted or to the outside;
A DMD controller which supplies a control signal to the DMD array unit and transmits a data file having an image to be exposed; And
An optical modulator for guiding and irradiating light reflected from the micromirror element array in a direction in which the substrate is positioned;
The DMD array unit
The transmissive part for transmitting the light, the non-transmissive part for transmitting the light, and the transflective part for selectively transmitting the light are defined, and the mirror pixel of the DMD array part defined as an area corresponding to the transflective part has a turn-on / turn-off operation. Variable frame by frame,
The DMD control unit
All frame images constituting the data file are composed of at least two sub-frame images, and a turn-on / turn-off operation is performed on mirror pixels of a DMD array unit defined as a region corresponding to the transflective portion in each sub-frame image. Maskless exposure apparatus, characterized in that for controlling to vary.
And a mirror pixel of the DMD array unit defined as an area corresponding to the transflective unit varies in a period of turning on / off for each frame.
And a mirror pixel of the DMD array unit defined as a region corresponding to the transflective unit, wherein a position of turning on / off is changed for each frame.
And a mirror pixel of the DMD array unit defined as an area corresponding to the transflective unit is varied in the number of turned on / off per frame.
And a mirror pixel of the DMD array unit defined as an area corresponding to the transflective unit alternately turns on and off at least one frame section.
And a mirror pixel of the DMD array unit defined as a region corresponding to the transflective portion is moved or alternately spaced apart by at least one mirror pixel at a turn-on and turn-off position by at least one frame interval.
And a mirror pixel of the DMD array unit defined as a region corresponding to the transflective portion moves or alternates in pairs of at least one mirror pixel, each of which is turned on and off at least one frame section.
And at least one of a period, a position, and a number of mirror pixels of the DMD array unit defined as an area corresponding to the transflective unit are turned on / off for each frame.
The transflective part
Maskless exposure, characterized in that the transmittance is adjusted in the range of 0% to 100% as one or more of the turn on / turn off period, position and number of the mirror pixels of the DMD array portion defined as the area corresponding to the transflective portion is varied. Device.
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CN109445253B (en) * | 2018-12-25 | 2021-03-05 | 合肥芯碁微电子装备股份有限公司 | Rapid scanning exposure method based on DMD leveling state |
KR102362864B1 (en) * | 2019-12-26 | 2022-02-14 | 서울대학교산학협력단 | Optical system and method for performing photolithography using dynamic mask |
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KR20110082224A (en) * | 2010-01-11 | 2011-07-19 | 삼성전자주식회사 | Maskless exposure apparatus and frame data processing method thereof |
KR20120038800A (en) * | 2010-10-14 | 2012-04-24 | 엘지전자 주식회사 | Maskless exposure apparatus and maskless exposure method |
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