KR102024913B1 - Sensor and manufacturing method for sensor thereof - Google Patents

Abstract

The present invention relates to a sensor and a method of manufacturing the same, and more particularly, (a) forming a first photoresist electrode with a photoresist that is exposed and cured on an upper surface of a first electrode region of a substrate; (b) forming a pair of second photoresist electrodes with photoresist that is exposed and cured in a pair of second electrode regions spaced from each other with the first photoresist electrode at the center; (c) placing a third photomask having a plurality of transmission portions arranged on the photoresist formed between the pair of second photoresist electrodes, and then exposing and curing the pair of second photoresist electrodes according to diffraction of ultraviolet rays. Forming a connected membrane structure; (d) developing and removing the photoresist of the remaining portions except for the portions exposed by the step (c); And (e) thermally decomposing the first and second photoresist electrodes and the membrane structure to convert the first and second carbon electrodes and the carbon membrane structure to complete the production process in a low-cost batch process. The efficiency of the repeated reaction of the oxidation and reduction reactions is increased, thereby improving the sensing sensitivity, and providing a sensor and a method for manufacturing the nanostructure at low cost without expensive nanoprocessing equipment.

Description

Sensor and its manufacturing method {SENSOR AND MANUFACTURING METHOD FOR SENSOR THEREOF}

The present invention relates to a sensor and a method of manufacturing the same, and more particularly, to prevent the factors to be detected from being sensed from the sensing unit sensed by the oxidation / reduction reaction and to sense the carbon membrane structure to increase the area of the reaction. It relates to a sensor having a high sensitivity and a method of manufacturing the same.

Recently, with increasing interest in environmental issues and the development of information and communication devices, sensors for various materials, especially biomaterials, are being developed, and thus, the manufacturing is simplified and the performance is improved by incorporating semiconductor technology. All sensors have the highest goal of improving sensitivity to improve performance, and efforts to achieve these goals are increasing.

Meanwhile, electrochemical sensors or optical sensors are mainly used for bio sensing. The optical sensor has a disadvantage in that the reaction speed is faster than other sensors, and the detection degree is high but the size is large, resulting in poor space utilization and inconvenience in use.

Disadvantages of the optical sensor can be overcome by using an electrochemical sensor, which measures the current flowing to an external circuit by electrochemically oxidizing or reducing a target material, or a gas dissolved or ionized in an electrolyte solution or a solid. It uses the electromotive force generated by the ions of the phase acting on the ion electrode, which is small in size, but has a very slow reaction speed and low sensitivity.

That is, according to Korean Patent No. 0741187, an electrochemical sensor for measuring the concentration of an analyte is placed in a reaction zone in an electrochemical cell including two electrodes having an impedance for proper current measurement. Measure the concentration of the component to be analyzed. The component to be analyzed reacts directly or indirectly with the redox agent to form an oxidizable or reducible substance in an amount corresponding to the concentration of the component to be analyzed. The amount of oxidizable or reducible material present is then measured electrochemically. In general, the method requires sufficient isolation between the electrodes so that the electrolysis product does not touch other electrodes and does not interfere with the reaction at the next electrode while it is measurable, and the manufacturing cost is expensive and the manufacturing process is complicated.

It is an object of the present invention to provide a sensor and a method of manufacturing the same, which improve the sensing sensitivity of the sensor while reducing its size by improving the structure of the sensor.

In addition, an object of the present invention is to provide a high-sensitivity sensor and a method of manufacturing the same by preventing separation of a factor to be detected by a sensing unit sensing a factor to be detected and increasing an area of an oxidation / reduction reaction.

In addition, the present invention can freely control the thickness, position, structure, etc. of the carbon electrode and the carbon membrane structure, the sensor manufacturing method that can significantly increase the productivity of the sensor based on the carbon electrode and carbon membrane structure And the purpose is to provide a sensor using the same.

The sensor manufacturing method according to the present invention comprises the steps of (a) forming a first photoresist electrode with a photoresist that is exposed and cured on the upper surface of the first electrode region of the substrate, and (b) centering the first photoresist electrode. And forming a pair of second photoresist electrodes with photoresist that is exposed and cured in a pair of second electrode regions spaced apart from each other, and (c) a plurality of transmission portions are formed on the photoresist on which the second photoresist electrode is formed. After placing the arranged third photomask, and exposed and cured to form a membrane structure connecting the pair of the second photoresist electrode, and (d) the remaining portion except for the portion exposed by the step (c) Developing and removing the photoresist; and (e) thermally decomposing the first and second photoresist electrodes and the membrane structure to convert the first and second carbon electrodes and the carbon membrane structure. The step of includes.

In this case, the step (a) according to the present invention includes forming an insulating layer on the upper surface of the substrate (a-1) and (a-2) photoresist on the insulating layer by the step (a-1). And applying (a-3) the first photomask having the first electrode region perforated on the insulating layer to which the photoresist is applied by the step (a-3). The first photoresist electrode is formed on the substrate by removing the photoresist by developing the first exposure step and (a-4) except the part exposed by the step (a-3). Completing the steps may be included.

In addition, the step (b) according to the present invention comprises the steps of (b-1) applying a photoresist on the substrate on which the first photoresist electrode is formed by the step (a). In step (b-1), a second photomask having a corresponding second electrode region perforated is positioned on the substrate on which the photoresist is secondarily applied, and then secondly exposed to ultraviolet light to center the first photoresist electrode. Comprising the step of completing the formation of a pair of second photoresist electrode spaced apart from each other may be included.

At this time, the photoresist according to the present invention is SU-8.

In addition, the transmission portion of the third photomask according to the present invention may be formed as a micropore, and also the transmission portion of the third photomask according to the present invention may be formed as a translucent screen.

In addition, the sensor according to the present invention is a first carbon electrode formed on the upper side of the substrate including an insulating layer, a pair of second carbon electrode formed to be spaced apart from each other centering the first carbon electrode, a pair of the second The upper portion of the carbon electrode is connected to each other, and includes a carbon membrane structure disposed on the first carbon electrode.

In this case, the carbon membrane structure according to the present invention may be formed along a carbon membrane formed of a thin film and the periphery of the carbon membrane and formed thicker than the thickness of the carbon membrane to support a backbone supporting the carbon membrane. .

The sensor and its manufacturing method according to the present invention has the following effects.

First, the carbon membrane structure and the carbon electrodes can be produced in a simple low-cost batch process through the primary and secondary to tertiary exposure process, development removal process and pyrolysis process.

Second, since the carbon membrane structure is formed to prevent the separation of the factor to be detected and to increase the area of the oxidation / reduction reaction, the efficiency of the repeated reaction of the oxidation and reduction reaction of the factor to be detected is detected. This increases the sensitivity of the sensor.

Third, the shape of the carbon membrane and the backbone is determined by the arrangement of a plurality of innumerable perforations formed in the photomask, the amount of exposure energy, and the pyrolysis process, and the gap between the carbon membrane and the substrate is determined by the height of the photoresist and the pyrolysis process. Because of this, it is possible to freely form various types of carbon membrane and backbone.

Fourth, the carbon membrane structure is formed due to the volume reduction through thermal decomposition of the micro-unit photoresist, so that the nanostructure can be produced at low cost without expensive nanoprocessing equipment.

1 is a block diagram showing an embodiment of a sensor manufacturing method according to the present invention.
2 is a block diagram showing step (a) according to an embodiment of the present invention in more detail.
3 is a block diagram showing step (b) according to an embodiment of the present invention in more detail.
Figure 4 is an exemplary view briefly showing the process of the sensor manufacturing method according to an embodiment of the present invention.
5 is a cross-sectional view showing a cross section of the sensor completed in accordance with an embodiment of the present invention.
6 is an exemplary view showing a configuration of a carbon membrane structure according to an embodiment of the present invention.
7 is an exemplary view showing a third photomask and a carbon membrane pattern generated thereby according to an embodiment of the present invention.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. Prior to this, terms or words used in the present specification and claims should not be construed as being limited to the common or dictionary meanings, and the inventors should properly explain the concept of terms in order to best explain their own invention. Based on the principle that it can be defined, it should be interpreted as meaning and concept corresponding to the technical idea of the present invention.

Therefore, the embodiments described in the specification and the drawings shown in the drawings are only the most preferred embodiments of the present invention, and do not represent all of the technical idea of the present invention, these are equivalent to replaceable at the time of the present application It should be understood that there may be variations.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 is a block diagram showing an embodiment of a sensor manufacturing method according to the invention, Figure 2 is a block diagram showing in more detail step (a) according to an embodiment of the present invention, Figure 3 is an embodiment of the present invention Figure 4 is a block diagram showing in more detail according to the step, Figure 4 is an exemplary view showing a brief process of the sensor manufacturing method according to an embodiment of the present invention, Figure 5 is completed according to an embodiment of the present invention 6 is a cross-sectional view illustrating a sensor, and FIG. 6 is an exemplary view showing a configuration of a carbon membrane structure according to an embodiment of the present invention, and FIG. 7 is a third photomask and a carbon membrane produced thereby according to an embodiment of the present invention. An example diagram showing a pattern.

The present invention relates to a sensor and a method for manufacturing the same, which prevents the factors to be detected from being sensed in the sensing unit sensed by the oxidation / reduction reaction and has a carbon membrane structure to increase the area of the oxidation / reduction reaction. 1 and 4 will be described as follows.

(a) step (S100),

In the step of forming the first photoresist electrode 20 of the photoresist (P) that is exposed and cured on the upper surface of the first electrode region of the substrate 10,

In this case, the embodiment of subdividing (a) S100 of forming the first photoresist electrode 20 on the upper surface of the substrate 10 will be described in detail with reference to FIGS. 2 and 4.

First, in step (a-1) (S110),

The insulating layer 11 is formed on the upper surface of the substrate 10 made of silicon wafer or the like.

In this case, the insulating layer 11 is made of an insulating material such as silicon dioxide or silicon nitride.

In the present embodiment, the insulating layer 11 is formed on the upper surface of the substrate 10, but the step of forming the insulating layer 11 may be omitted, and the substrate 10 may be formed of an insulating material.

And (a-2) to step S120,

The photoresist P is first applied to the upper surface of the substrate 10 on which the insulating layer 11 is formed on the upper surface by step (a-1). In other words, the photoresist P is applied to the upper surface of the insulating layer 11 formed on the upper surface of the substrate 10.

At this time, the photoresist (P) is preferably applied by spin coating for even application, and SU-8 is used as the photoresist (P).

 In the embodiment of the present invention, the photoresist P is limited to SU-8. However, the photoresist P is not limited thereto, and any one of a negative photoresist may be used.

And in step (a-3) (S130),

After the first photomask M1 having the perforated first electrode region is positioned on the insulating layer 11 to which the photoresist P is applied by the step (a-2) (S120), ultraviolet rays are emitted. Irradiation and primary exposure.

In this case, the exposed ultraviolet light energy should be irradiated with sufficient ultraviolet light so that the photoresist P may be cured from the top of the photoresist to the top of the insulating layer 11.

When the primary exposure is completed, the post exposure bake is performed to cure the photoresist P on the upper portion of the insulating layer 11 in the shape of the corresponding first electrode region according to the perforation shape of the first photomask M1. .

And (a-4) step (S140),

The first photoresist electrode 20 is formed on the substrate 10 by developing and removing the photoresist P of the remaining portions except for the portion exposed and cured by the step (a-3) (S130). do.

The photoresist P development process is widely used to remove the photoresist P, and thus a detailed description thereof will be omitted.

When the first photoresist electrode 20 is formed on the upper surface of the substrate 10 by the step (a) (S100), step (b) (S200) is performed to the next step.

In step (b),

A pair of second photos are formed by photoresist P which is exposed and cured to a pair of second electrode regions spaced from each other, centering on the first photoresist electrode 20 formed by step (a) (S100). In the step of forming a resist electrode 30,

At this time, the step (b) (S200) of forming the pair of second photoresist electrode 30 spaced apart from each other centering on the first photoresist electrode 20 formed on the upper surface of the substrate 10 is subdivided. An embodiment is described in more detail with reference to FIGS. 3 and 4 as follows.

First, in step (b-1) (S210),

The photoresist P is secondarily applied on the substrate 10 on which the first photoresist electrode 20 is formed in step (a).

At this time, the photoresist (P) is also preferably applied by spin coating at this time for even application, and SU-8 is used as the photoresist (P).

And (b-2) step (S220),

After the second photomask M2 having the perforated second electrode region is positioned on the substrate 10 to which the photoresist P is applied by the step (b-1) (S210), the second exposure with ultraviolet light is performed. In this case, the exposed ultraviolet light energy should be irradiated with sufficient ultraviolet light so that the photoresist P may be cured from the top of the photoresist to the insulating layer 11.

When the second exposure is completed, the photoresist P is cured in the form of the corresponding second electrode region by the perforation of the second photomask M2 on the insulating layer 11, and the first photoresist electrode A pair of second photoresist electrodes 30 are formed with 20 at the center and spaced apart from each other.

When a pair of second photoresist electrodes 30 are formed on the upper surface of the substrate 10 by the step (b) (S200), and spaced apart from each other, In step (c), step S300 is performed.

Step (c) (S300),

After the third photomask M3 having a plurality of transmission parts arranged on the photoresist P between the pair of second photoresist electrodes 30 formed by step (b), exposure, Hardening to form a membrane structure 40 connecting the pair of second photoresist electrodes 30 according to ultraviolet diffraction,

In this case, the transmission part is formed as micropores, and the ultraviolet light energy exposed to the photoresist P is adjusted so that only the upper portion of the photoresist P can be cured.

That is, the size of the micropores, which are the plurality of transmission portions formed in the third photomask M3, is limited, and the array intervals are densely arranged to limit the amount of ultraviolet light passing through the transmission portion of the light energy due to the diffraction limit and diffraction between the micropores. Membrane is formed. In this embodiment, although the amount of light energy passing is limited by the diffraction limit, it is also possible to form a membrane by limiting the ultraviolet light energy source itself.

Then, as shown in FIG. 6, a mesh backbone structure (which is converted into a carbon backbone 41b by a pyrolysis process to be described later) is formed in the shape of the perforated micropore. The gap between the micropores of the transmission part and the micropores of the transmission part is very close, so that light energy spreads even between the micropores of the transmission part and the micropores of the transmission part due to the diffraction characteristics of the ultraviolet light. The process is converted to the carbon membrane 41a.) Can be formed.

As illustrated in FIG. 7, the third photomask M3 may be formed in various patterns according to the needs of manufacturers and users.

Therefore, when the tertiary exposure is completed, the photoresist P is cured in a thin film form between the pair of second electrode regions by the diffraction limit according to the numerous (multiple) transmission portions of the third photomask M3. A membrane structure 40 is formed on the first photoresist electrode 20 and connects the pair of second photoresist electrodes 30 to each other.

In addition, the third photomask M3 may be formed in the form of a screen made of a plurality of translucent screens or a material capable of restricting the passage of ultraviolet rays so that the membrane structure 40 of the thin film can be formed.

When the membrane structure 40 is formed on the first photoresist electrode 20 and connects the pair of second photoresist electrodes 30 by the step (c) (S300), In step (d), step S400 is performed.

Step (d) (S400),

Developing and removing the photoresist P of the remaining portions except for the portion exposed by the step (c) (S300),

At this time, the photoresist P existing between the second electrode regions which are not exposed by the steps (b) (S200) and (c) (S300) is removed.

When forming the first photoresist electrode 20 using the photoresist P, step (a-4) (S140) may be omitted, and steps (b) S200 and S300 may be performed. have.

Finally, by developing and removing the unexposed photoresist P, the process can be simplified, and the membrane structure 40 and the second photoresist electrode 30 formed on the first photoresist electrode 20 can be simplified. Can be formed horizontally.

When the photoresist P existing between the unexposed second electrode regions 30 is removed by step (d) (S400), step (e) (S500) is performed.

The step (e) (S500),

Thermally decomposing the first and second photoresist electrodes 20 and 30 and the membrane structure 40 to convert the first and second photoresist electrodes 20 and 30 into the first and second carbon electrodes 21 and 31 and the carbon membrane structure 41.

In this case, the first and second photoresist electrodes 20 and 30 and the membrane structure 40 are not only carbonized through pyrolysis, but also have a height of 10 to 90% and a width of 10 to 90% depending on the size of the structure. Is reduced.

A typical carbon electrode structure may have a width of 100 nm to several centimeters, a height of 100 nm to several tens of micrometers, and a length of several micrometers to several centimeters, wherein the area ratio of the backbone and the carbon membrane according to the present invention is the backbone 1: Carbon membrane 10 to backbone 10: Carbon membrane 1, the thickness ratio is preferably formed from backbone 1: carbon membrane 1 to backbone 50: carbon membrane 1.

The environmental conditions of the pyrolysis is preferably pyrolyzed at a high temperature of more than 800 ° C in a vacuum or inert gas environment, but if the temperature is controlled at a temperature of 300 ° C or more pyrolysis temperature, the conductivity, elastic modulus, shape, etc. of the final carbon electrode is controlled. Therefore, the pyrolysis temperature is not limited to 800 ° C.

Looking at the sensor according to the embodiment described above with reference to the drawings.

5 and 6, a first carbon electrode 21 is formed on an upper side of the substrate 10 including the insulating layer 11, and a pair of first electrodes is formed around the first carbon electrode 21. The two carbon electrodes 31 are formed to be spaced apart from each other.

A pair of upper portions of the second carbon electrodes 31 are connected to each other, and a carbon membrane structure 41 is disposed on the first carbon electrodes 21.

In this case, the carbon membrane structure 41 may be formed of a thin carbon thin film of a type that closes between a thick carbon region such as a mesh and a mesh such as a thin carbon membrane 41a and a thick backbone 41b.

The carbon membrane structure 41 and the second carbon electrode 31 may serve as an oxidation electrode for oxidizing a factor to be detected, and the first carbon electrode 21 may serve as a reduction electrode for reducing the factor to be detected. have.

Alternatively, the carbon membrane structure 41 and the second carbon electrode 31 serve as a reduction electrode for reducing a factor to be detected, and the first carbon electrode 21 is an oxide electrode for oxidizing the factor to be detected. It may work.

The sensor based on the carbon electrode and the carbon membrane structure manufactured by the present method may be widely used for sensing of oxidizable and reducible materials.

Although the present invention has been described with reference to the embodiments shown in the drawings, this is merely exemplary, and it will be understood by those skilled in the art that various modifications and equivalent other embodiments are possible. Therefore, the true technical protection scope of the present invention will be defined by the technical spirit of the appended claims.

M1: first photomask M2: second photomask
M3: third photomask P: photoresist
10: substrate 11: insulating layer
20: first photoresist electrode 21: first carbon electrode
30: second photoresist electrode 31: second carbon electrode
40: membrane structure 41: carbon membrane structure

Claims (8)

(a-1) forming an insulating layer on the upper surface of the substrate;
(a-2) first applying a photoresist on the insulating layer by the step (a-1);
(a-3) placing a first photomask on which the first electrode region is perforated on the insulating layer on which the photoresist is applied by the step (a-2), and then performing primary exposure with ultraviolet rays;
(a-4) completing the formation of the first photoresist electrode on the substrate by developing the remaining portions except for the portions exposed by the step (a-3) to remove the photoresist;
(b-1) applying a second photoresist on the substrate on which the first photoresist electrode is formed by the step (a-4);
(b-2) a second photomask having a corresponding second electrode region perforated on the substrate on which the photoresist is secondarily applied by the step (b-1) is positioned and then secondarily exposed to ultraviolet light to perform the first exposure. Completing formation of a pair of second photoresist electrodes spaced apart from each other with the photoresist electrode at the center;
(c) placing a third photomask having a plurality of transmission portions arranged on the photoresist formed between the pair of second photoresist electrodes, and then exposing and curing the pair of second photoresist electrodes according to diffraction of ultraviolet rays. Forming a connected membrane structure;
(d) developing and removing the photoresist of the remaining portions except for the portions exposed by the step (c); And
(e) a method of manufacturing a sensor comprising thermally decomposing the first and second photoresist electrodes and the membrane structure and converting the first and second photoresist electrodes into a first carbon electrode and a carbon membrane structure.



delete delete The method according to claim 1,
The photoresist is a sensor manufacturing method of SU-8.
The method according to claim 1,
Transmitting portion of the third photomask is a sensor manufacturing method formed by micropores.
The method according to claim 1,
Transmissive portion of the third photomask is a sensor manufacturing method formed of a translucent screen.
A sensor manufactured by the manufacturing method of claim 1,
A first carbon electrode formed on the upper surface of the insulating layer formed on the upper surface of the substrate;
A pair of second carbon electrodes spaced apart from each other with the first carbon electrode at the center;
And a carbon membrane structure that connects a pair of upper portions of the second carbon electrode to each other and is disposed on the first carbon electrode.
The method according to claim 7,
The carbon membrane structure
And a carbon membrane formed of a thin film and a backbone formed along the periphery of the carbon membrane and formed to be thicker than the thickness of the carbon membrane to support the carbon membrane.

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