KR102024661B1 - Nonvolatile memory device and method of reading data thereof - Google Patents
Nonvolatile memory device and method of reading data thereof Download PDFInfo
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- KR102024661B1 KR102024661B1 KR1020130008114A KR20130008114A KR102024661B1 KR 102024661 B1 KR102024661 B1 KR 102024661B1 KR 1020130008114 A KR1020130008114 A KR 1020130008114A KR 20130008114 A KR20130008114 A KR 20130008114A KR 102024661 B1 KR102024661 B1 KR 102024661B1
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
- G11C7/1069—I/O lines read out arrangements
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
- G11C2216/12—Reading and writing aspects of erasable programmable read-only memories
- G11C2216/14—Circuits or methods to write a page or sector of information simultaneously into a nonvolatile memory, typically a complete row or word line in flash memory
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Abstract
A data reading method of a nonvolatile memory device according to the present invention may include receiving a power supply signal, reading first main data and second main data according to the power supply signal, and first and second main data. Reading first dummy data and second dummy data when at least one of the data has failed to read, and when reading at least one of the first and second dummy data has failed to read, the first dummy Reading the data and the second main data, and reading the first main data and the second dummy data when at least one of the first dummy data and the second main data has failed to be read. In the case where both the first main data and the second dummy data are read successfully, the first main data and the second dummy data are stored. Storing in a buffer of a nonvolatile memory device, wherein the first main and first dummy data are stored in a first mat of the nonvolatile memory device, and the second main and second dummy data are stored in the nonvolatile memory device. Stored in the second mat of the memory device.
A nonvolatile memory device according to an embodiment of the present invention may include a first mat storing first main data and first dummy data, a second mat storing second main data and second dummy data, and the first mat and the second mat. A control logic for reading data in an unpaired read manner, and a buffer for storing data read by the control logic, wherein the contents of the first main data and the first dummy data are the same, The contents of the two main and second dummy data are the same.
Description
The present invention relates to a semiconductor memory device, and more particularly to a nonvolatile memory device and a data reading method thereof.
Semiconductor memory devices are generally classified into volatile memory devices and non-volatile memory devices. Volatile memory devices read and write quickly, but they lose their stored content when the external power supply is interrupted. On the other hand, nonvolatile memory devices retain their contents even when the external power supply is interrupted. Therefore, the nonvolatile memory device is used to store contents to be preserved regardless of whether or not power is supplied.
In recent years, devices using nonvolatile memory are increasing. For example, MP3 players, digital cameras, mobile phones, camcorders, flash memory cards, and solid state drives (SSDs) use nonvolatile memory as storage devices. Doing.
An object of the present invention is to provide a method for efficiently reading important data through the diversification of the reading method.
According to another aspect of the present invention, there is provided a method of reading data of a nonvolatile memory device, the method comprising: receiving a power supply signal, reading first main data and second main data according to the power supply signal, When at least one of the first and second main data has failed to be read, reading the first dummy data and the second dummy data, and at least one of the first and second dummy data has failed to read If the reading of the first dummy data and the second main data fails, at least one of the first dummy data and the second main data fails to read, the first main data and the second main data are read. Reading dummy data, and if both of the first main data and the second dummy data are successfully read, the first main data and And storing second dummy data in a buffer of the nonvolatile memory device, wherein the first main data and the first dummy data are stored in a first mat of the nonvolatile memory device. Second dummy data is stored in a second mat of the nonvolatile memory device.
According to an aspect of the present invention, there is provided a nonvolatile memory device including: a first mat storing first main data and first dummy data; a second mat storing second main data and second dummy data; A control logic for reading data in an unpaired read manner in the first and second mats, and a buffer for storing the data read by the control logic, wherein the first and second dummy data are stored in the first and second mats. The contents are the same, and the contents of the second main and second dummy data are the same.
According to the embodiment of the present invention as described above, it is possible to provide a method for efficiently reading important data through the diversification of the reading method.
1 is a block diagram of a nonvolatile memory device according to the present invention.
2 is a view showing a storage method of setting data according to the present invention.
3 is a diagram illustrating a data reading method according to a first embodiment of the present invention.
4 is a diagram illustrating a data reading process according to the first embodiment of the present invention.
5 is a diagram illustrating a data reading method according to a second embodiment of the present invention.
6 is a flowchart illustrating a data reading method according to a second embodiment of the present invention.
7 is a flowchart illustrating a data reading method according to a third embodiment of the present invention.
It is to be understood that both the foregoing general description and the following detailed description are exemplary, and that additional explanations of the claimed invention are provided. Reference numerals are shown in detail in preferred embodiments of the invention, examples of which are indicated in the reference figures. In any case, like reference numerals are used in the description and the drawings to refer to the same or like parts.
In the following, a nonvolatile memory device will be used as an example of a storage device or an electronic device for explaining the features and functions of the present invention. However, one of ordinary skill in the art will readily appreciate the other advantages and performances of the present invention in accordance with the teachings herein. In addition, the present invention may be implemented or applied through other embodiments. In addition, the detailed description may be modified or changed according to aspects and applications without departing from the scope, spirit and other objects of the present invention.
1 is a block diagram of a nonvolatile memory device according to the present invention. Referring to FIG. 1, the
Matt 1 100 includes
Matt 2 200 includes
The
2 is a view showing a storage method of setting data according to the present invention. Referring to FIG. 2, the
The setting data is stored in the setting data block. The configuration data includes DC information, option information, repair information, bad block information, and the like necessary for initializing the setting of the
The setting data (Main Information 1) is stored in the mat 1 (MAT 1), and the main data 2 (Main Data 2) is stored in the mat 2 (MAT 2).
3 to 5 illustrate a process in which the control logic 300 (see FIG. 1) reads the configuration data according to a power-on signal. The data of the
3 is a diagram illustrating a data reading method according to a first embodiment of the present invention. Referring to FIG. 3, the
The
4 is a diagram illustrating a data reading process according to the first embodiment of the present invention. Referring to FIG. 4, there is a case in which the setup data (Information Data) cannot be read normally in the method of FIG. 3. For various reasons, a continuous fail may occur in the
The
5 is a diagram illustrating a data reading method according to a second embodiment of the present invention. Referring to FIG. 5, even when a cross defect occurs, information data may be read. Upon the first read (Read 1), the
The
If cross defects occur, the setup data may be read according to the unpaired read method. According to the unpaired read method, the
6 is a flowchart illustrating a data reading method according to a second embodiment of the present invention. FIG. 6 shows a method of reading configuration data by an unpaired read method.
In step S105, the control logic 300 (see FIG. 1) receives a power-on signal. The
In step S110, the
In step S115, the
In step S120, the
In step S125, the
In step S130, the
In step S135, the
In step S140, the
In step S145, the
In step S150, when all of the data of the
By the above unpaired read method, even when a cross defect occurs, the
7 is a flowchart illustrating a data reading method according to a third embodiment of the present invention. FIG. 7 illustrates a method for preventing at least one data repeat process from being infinitely repeated by failing at least one of data of the
In operation S210, the control logic 300 (see FIG. 1) receives a power-on signal. The
In operation S220, the
In step S230, the
In operation S240, when all data read from the
In operation S250, when at least one of the data read by the
In operation S260, when the number of data reads exceeds the maximum number of reads, the
In the above, the process in which the
As described above, the optimum embodiment has been disclosed in the drawings and the specification. Although specific terms have been used herein, they are used only for the purpose of describing the present invention and are not used to limit the scope of the present invention as defined in the meaning or claims. Therefore, those skilled in the art will understand that various modifications and equivalent other embodiments are possible. Therefore, the true technical protection scope of the present invention will be defined by the technical spirit of the appended claims.
100, 200: Matt
110, 210: Cell array
120, 220: row decoder
130, 230: page buffer
300: control logic
310: buffer
1000: nonvolatile memory device
Claims (9)
Receiving a power supply signal;
Reading first main data and second main data according to the power supply signal;
Reading first dummy data and second dummy data when at least one of the first and second main data has failed to be read;
Reading the first dummy data and the second main data when at least one of the first and second dummy data has failed to be read;
Reading the first main data and the second dummy data when at least one of the first dummy data and the second main data has failed to be read; And
Storing both the first main data and the second dummy data in a buffer of the nonvolatile memory device when both of the first main data and the second dummy data are successfully read;
And the first main and first dummy data are stored in a first mat of the nonvolatile memory device, and the second main and second dummy data are stored in a second mat of the nonvolatile memory device.
In the reading of the first main data and the second main data, when both of the first and second main data are successfully read, the first and second main data are stored in a buffer of the nonvolatile memory device. Data read methods.
In the reading of the first dummy data and the second dummy data, when both of the first and second dummy data are successfully read, the first and second dummy data are stored in a buffer of the nonvolatile memory device. Data read methods.
In the reading of the first dummy data and the second main data, when both of the first dummy data and the second main data are successfully read, the first dummy data and the second main data are not read. A method of reading data stored in a buffer of a volatile memory device.
In the reading of the first main data and the second dummy data, when at least one of the first main data and the second dummy data has failed to be read, the first and second main data are read. Data read methods.
Receiving a power supply signal;
Reading first data and second data in an unpaired read manner according to the power supply signal;
Checking the number of readings of the first and second data when at least one of the first and second data has failed to be read; And
If the number of reads of the first and second data exceeds the maximum number of reads, failing to initialize the setting of the nonvolatile memory device;
And the first data is stored in a first mat of the nonvolatile memory device, and the second data is stored in a second mat of the nonvolatile memory device.
In the reading of the first data and the second data, when both of the first and second data are successfully read, the first and second data are stored in a buffer of the nonvolatile memory device. .
In the checking of the number of readings of the first and second data, when the number of readings of the first and second data is less than or equal to the maximum number of readings, the first and second data in an unpaired read manner. Method of reading data from which is read.
A second mat for storing second main data and second dummy data;
Control logic to read data in an unpaired read manner in the first and second mats; And
A buffer for storing data read by the control logic,
The contents of the first main and first dummy data are the same, and the contents of the second main and second dummy data are the same.
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US11966625B2 (en) | 2021-08-06 | 2024-04-23 | Samsung Electronics Co., Ltd. | Memory device and operating method for setting and repairing data errors |
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US11003393B2 (en) | 2019-07-31 | 2021-05-11 | Samsung Electronics Co., Ltd. | Nonvolatile memory device and method of controlling initialization of the same |
US11056200B2 (en) | 2019-07-31 | 2021-07-06 | Samsung Electronics Co., Ltd. | Nonvolatile memory device and method of controlling initialization of the same |
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US7096351B2 (en) | 2002-07-10 | 2006-08-22 | Nec Electronics Corporation | Single-chip microcomputer and boot region switching method thereof |
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US11966625B2 (en) | 2021-08-06 | 2024-04-23 | Samsung Electronics Co., Ltd. | Memory device and operating method for setting and repairing data errors |
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