KR102024661B1 - Nonvolatile memory device and method of reading data thereof - Google Patents

Nonvolatile memory device and method of reading data thereof Download PDF

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KR102024661B1
KR102024661B1 KR1020130008114A KR20130008114A KR102024661B1 KR 102024661 B1 KR102024661 B1 KR 102024661B1 KR 1020130008114 A KR1020130008114 A KR 1020130008114A KR 20130008114 A KR20130008114 A KR 20130008114A KR 102024661 B1 KR102024661 B1 KR 102024661B1
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data
read
main
dummy
memory device
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KR1020130008114A
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KR20140095656A (en
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곽동훈
박현욱
최명훈
박기태
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삼성전자주식회사
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
    • G11C7/1069—I/O lines read out arrangements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
    • G11C2216/12—Reading and writing aspects of erasable programmable read-only memories
    • G11C2216/14—Circuits or methods to write a page or sector of information simultaneously into a nonvolatile memory, typically a complete row or word line in flash memory

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  • Read Only Memory (AREA)

Abstract

A data reading method of a nonvolatile memory device according to the present invention may include receiving a power supply signal, reading first main data and second main data according to the power supply signal, and first and second main data. Reading first dummy data and second dummy data when at least one of the data has failed to read, and when reading at least one of the first and second dummy data has failed to read, the first dummy Reading the data and the second main data, and reading the first main data and the second dummy data when at least one of the first dummy data and the second main data has failed to be read. In the case where both the first main data and the second dummy data are read successfully, the first main data and the second dummy data are stored. Storing in a buffer of a nonvolatile memory device, wherein the first main and first dummy data are stored in a first mat of the nonvolatile memory device, and the second main and second dummy data are stored in the nonvolatile memory device. Stored in the second mat of the memory device.
A nonvolatile memory device according to an embodiment of the present invention may include a first mat storing first main data and first dummy data, a second mat storing second main data and second dummy data, and the first mat and the second mat. A control logic for reading data in an unpaired read manner, and a buffer for storing data read by the control logic, wherein the contents of the first main data and the first dummy data are the same, The contents of the two main and second dummy data are the same.

Description

Nonvolatile memory device and its data reading method {NONVOLATILE MEMORY DEVICE AND METHOD OF READING DATA THEREOF}

The present invention relates to a semiconductor memory device, and more particularly to a nonvolatile memory device and a data reading method thereof.

Semiconductor memory devices are generally classified into volatile memory devices and non-volatile memory devices. Volatile memory devices read and write quickly, but they lose their stored content when the external power supply is interrupted. On the other hand, nonvolatile memory devices retain their contents even when the external power supply is interrupted. Therefore, the nonvolatile memory device is used to store contents to be preserved regardless of whether or not power is supplied.

In recent years, devices using nonvolatile memory are increasing. For example, MP3 players, digital cameras, mobile phones, camcorders, flash memory cards, and solid state drives (SSDs) use nonvolatile memory as storage devices. Doing.

An object of the present invention is to provide a method for efficiently reading important data through the diversification of the reading method.

According to another aspect of the present invention, there is provided a method of reading data of a nonvolatile memory device, the method comprising: receiving a power supply signal, reading first main data and second main data according to the power supply signal, When at least one of the first and second main data has failed to be read, reading the first dummy data and the second dummy data, and at least one of the first and second dummy data has failed to read If the reading of the first dummy data and the second main data fails, at least one of the first dummy data and the second main data fails to read, the first main data and the second main data are read. Reading dummy data, and if both of the first main data and the second dummy data are successfully read, the first main data and And storing second dummy data in a buffer of the nonvolatile memory device, wherein the first main data and the first dummy data are stored in a first mat of the nonvolatile memory device. Second dummy data is stored in a second mat of the nonvolatile memory device.

According to an aspect of the present invention, there is provided a nonvolatile memory device including: a first mat storing first main data and first dummy data; a second mat storing second main data and second dummy data; A control logic for reading data in an unpaired read manner in the first and second mats, and a buffer for storing the data read by the control logic, wherein the first and second dummy data are stored in the first and second mats. The contents are the same, and the contents of the second main and second dummy data are the same.

According to the embodiment of the present invention as described above, it is possible to provide a method for efficiently reading important data through the diversification of the reading method.

1 is a block diagram of a nonvolatile memory device according to the present invention.
2 is a view showing a storage method of setting data according to the present invention.
3 is a diagram illustrating a data reading method according to a first embodiment of the present invention.
4 is a diagram illustrating a data reading process according to the first embodiment of the present invention.
5 is a diagram illustrating a data reading method according to a second embodiment of the present invention.
6 is a flowchart illustrating a data reading method according to a second embodiment of the present invention.
7 is a flowchart illustrating a data reading method according to a third embodiment of the present invention.

It is to be understood that both the foregoing general description and the following detailed description are exemplary, and that additional explanations of the claimed invention are provided. Reference numerals are shown in detail in preferred embodiments of the invention, examples of which are indicated in the reference figures. In any case, like reference numerals are used in the description and the drawings to refer to the same or like parts.

In the following, a nonvolatile memory device will be used as an example of a storage device or an electronic device for explaining the features and functions of the present invention. However, one of ordinary skill in the art will readily appreciate the other advantages and performances of the present invention in accordance with the teachings herein. In addition, the present invention may be implemented or applied through other embodiments. In addition, the detailed description may be modified or changed according to aspects and applications without departing from the scope, spirit and other objects of the present invention.

1 is a block diagram of a nonvolatile memory device according to the present invention. Referring to FIG. 1, the control logic 300 is connected to the mats 100 and 200 to store and read data. The mats 100 and 200 are divided into an area storing information data and an area storing user data. The configuration data includes DC information, option information, repair information, bad block information, and the like necessary for initializing the setting of the nonvolatile memory device 1000.

Matt 1 100 includes cell array 1 110, row decoder 1 120 and page buffer 1 130. When storing data, the row decoder 1 120 selects one word line of the cell array 1 110. The page buffer 1 130 transfers data to the cell array 1 110 through a bit line. Data is stored in the selected word line of the cell array 1110. When reading data, the row decoder 1 120 selects one word line of the cell array 1 110. The page buffer 1 130 reads data stored in the selected word line through the bit line. The read data is transferred to the control logic 300.

Matt 2 200 includes cell array 2 210, row decoder 2 220 and page buffer 2 230. When storing data, row decoder 2 220 selects one word line of cell array 2 210. Page buffer 2 230 transfers data to cell array 2 210 through a bit line. Data is stored in the selected word line of the cell array 2 210. When reading data, the row decoder 2 220 selects one word line of the cell array 2 210. Page buffer 2 230 reads data stored in the selected word line through the bit line. The read data is transferred to the control logic 300.

The control logic 300 stores and reads data in the cell arrays 110 and 210 through the row decoders 120 and 220 and the page buffers 130 and 230 of the mats 100 and 200. When power is supplied to a system using the nonvolatile memory device 1000, the nonvolatile memory device 1000 performs a setting initialization operation. The control logic 300 receives a power-on signal. The control logic 300 that receives the power-on signal reads the setting data from the mats 100 and 200 and stores the setting data in the buffer 310. The buffer 310 may be inside or outside the control logic 300. If the configuration data is not normally read, the nonvolatile memory device 1000 may not store and read user data. Although two mats 100 and 200 are shown in FIG. 1 for better understanding, it is obvious to those who have acquired the general knowledge in this field that the nonvolatile memory device 1000 may include two or more mats. Do.

2 is a view showing a storage method of setting data according to the present invention. Referring to FIG. 2, the mats MAT 1 and MAT 2 include a setting data area and a user data area.

The setting data is stored in the setting data block. The configuration data includes DC information, option information, repair information, bad block information, and the like necessary for initializing the setting of the nonvolatile memory device 1000. If the configuration data is not normally read, the nonvolatile memory device 1000 may not store and read user data. Therefore, the configuration data (Information Data) is very important. Therefore, the configuration data stores duplicate data including the same contents as the main data along with the main data.

The setting data (Main Information 1) is stored in the mat 1 (MAT 1), and the main data 2 (Main Data 2) is stored in the mat 2 (MAT 2). Main data 1 and main data 2 have different contents. In Mat 1, Main Data 1 and Dummy Data 1 contain the same contents. In Mat 2, Main Data 2 and Dummy Data 2 contain the same contents. User data stored by the user is stored in the user data block.

3 to 5 illustrate a process in which the control logic 300 (see FIG. 1) reads the configuration data according to a power-on signal. The data of the mat 1 and the data of the mat 2 include different contents. In order for the nonvolatile memory device 1000 to operate normally, all data of the mats 1 and 2 should be read normally. Thus, the control logic 300 repeatedly reads the data several times until the data of the mats 1 and 2 are normally read. Hereinafter, a pass will be defined as if data can be read normally, and a fail if data can not be read normally.

3 is a diagram illustrating a data reading method according to a first embodiment of the present invention. Referring to FIG. 3, the control logic 300 simultaneously reads main data or dummy data from mats 1 and 2. In the first to third reads (Read 1 to 3), the control logic 300 simultaneously reads Main Data 1 and 2 (Main Data 1 and 2). In the fourth to sixth reads (Read 4 to 6), the control logic 300 simultaneously reads dummy data 1 and 2.

The control logic 300 determines whether an error of the configuration data occurs by a certain logic every time the configuration data is read. When all data of the mats 1 and 2 are passed, the control logic 300 stores the setting data in the buffer 310 and sets the nonvolatile memory device 1000. Perform initialization If at least one of the data of the mats 1 and 2 is failed, the configuration data is failed and the nonvolatile memory device 1000 may operate normally. none. In FIG. 3, the number of reads is set to six times, but the number of reads may be set more or less.

4 is a diagram illustrating a data reading process according to the first embodiment of the present invention. Referring to FIG. 4, there is a case in which the setup data (Information Data) cannot be read normally in the method of FIG. 3. For various reasons, a continuous fail may occur in the main data 1 of the mat 1 and the dummy data 2 of the mat 2 when the data is read (hereinafter, referred to as cross). Cross Defect. Although not shown in the drawings, cross defects may occur in the dummy data 1 of the mat 1 and the main data 2 of the mat 2 when the data is read. .

 The control logic 300 passes the setting data until all of the data of the mats 1 and 2 are pass processed. When a cross defect occurs when data is read by the method of FIG. 3, at least one of the data of the mats 1 and 2 is necessarily failed. In this case, the setting data is failed. As a result, the nonvolatile memory device 1000 may not operate normally. A method for solving this problem is described in FIG. 5.

5 is a diagram illustrating a data reading method according to a second embodiment of the present invention. Referring to FIG. 5, even when a cross defect occurs, information data may be read. Upon the first read (Read 1), the control logic 300 reads main data 1 and 2 (Main Data 1 and 2). Upon a second read (Read 2), the control logic 300 reads dummy data 1 and 2. Upon a third read (Read 3), the control logic 300 reads dummy data 1 and main data 2. Upon the fourth read (Read 4), the control logic 300 reads main data 1 and dummy data 2. Upon the fifth read (Read 5), the control logic 300 reads main data 1 and 2 (Main Data 1 and 2). At the sixth read (Read 6), the control logic 300 reads dummy data 1 and 2. This method will be defined as an unpaired read method. In FIG. 5, the number of reads is set to six times, but the number of reads may be set more or less.

The control logic 300 determines whether an error of the configuration data occurs by a predetermined logic every time the configuration data is read. When all data of the mats 1 and 2 are passed, the control logic 300 stores the setting data in the buffer 310 and sets the nonvolatile memory device 1000. Perform initialization

If cross defects occur, the setup data may be read according to the unpaired read method. According to the unpaired read method, the control logic 300 performs the dummy data 1 of the mat 1 and the main data of the mat 2 at the third read time. Read (Main Data 2) together. Similarly, upon a fourth read (Read 4), the control logic 300 reads the main data (Main Data 1) of the mat 1 (MAT 1) and the dummy data (Dummy Data 2) of the mat 2 (MAT 2) together. In this way, normal data can be read in both MAT 1 and 2. As a result, even when a cross defect occurs, the control logic 300 may read setting data.

6 is a flowchart illustrating a data reading method according to a second embodiment of the present invention. FIG. 6 shows a method of reading configuration data by an unpaired read method.

In step S105, the control logic 300 (see FIG. 1) receives a power-on signal. The control logic 300 receiving the power-on signal prepares for initialization of the setting so that the nonvolatile memory device 1000 may operate normally. The control logic 300 reads configuration data from the mats 100 and 200 to initialize the configuration.

In step S110, the control logic 300 executes the first read (Read 1). The control logic 300 reads main data 1 from the mat 1 100, and reads main data 2 from the mat 2 200.

In step S115, the control logic 300 determines whether the data read by the predetermined logic is Pass. If both main data 1 and 2 have been pass processed, the process moves to step S150. If at least one of the main data 1 and 2 has failed, the process moves to step S120. This is because, when at least one of the main data 1 and 2 is failed, the configuration data is failed.

In step S120, the control logic 300 executes a second read (Read 2). The control logic 300 reads dummy data 1 from the mat 1 100 and reads dummy data 2 from the mat 2 200.

In step S125, the control logic 300 determines whether or not a pass of data read by a predetermined logic is passed. If both dummy data 1 and 2 have been pass processed, the process moves to step S150. If at least one of the dummy data 1 and 2 has failed, the process moves to step S130.

In step S130, the control logic 300 executes a third read (Read 3). The control logic 300 reads dummy data 1 from the mat 1 100, and reads main data 2 from the mat 2 200.

In step S135, the control logic 300 determines whether the data read by the predetermined logic is Pass. If both the dummy data 1 and the main data 2 pass, the process moves to step S150. If at least one of the dummy data 1 and the main data 2 has failed, the process moves to step S140.

In step S140, the control logic 300 executes a fourth read (Read 4). The control logic 300 reads main data 1 from the mat 1 100, and reads dummy data 2 from the mat 2 200.

In step S145, the control logic 300 determines whether the pass of the data read by the predetermined logic (Logic) (Pass). If both main data 1 and dummy data 2 pass, the process moves to step S150. When at least one of the main data 1 and the dummy data 2 have failed, the process moves to step S110 and repeats from step S110 to step S145.

In step S150, when all of the data of the mats 1 and 2 (100, 200) are passed, the control logic 300 stores the setting data in the buffer 310. The buffer 310 may be inside or outside the control logic 300. The control logic 300 storing the setting data performs the initialization of the nonvolatile memory device 1000.

By the above unpaired read method, even when a cross defect occurs, the control logic 300 may normally read the setup data. Therefore, even when a cross defect occurs, the nonvolatile memory device 1000 may operate.

7 is a flowchart illustrating a data reading method according to a third embodiment of the present invention. FIG. 7 illustrates a method for preventing at least one data repeat process from being infinitely repeated by failing at least one of data of the mats 100 and 200 during data reading.

In operation S210, the control logic 300 (see FIG. 1) receives a power-on signal. The control logic 300 receiving the power-on signal prepares for initialization of the setting so that the nonvolatile memory device 1000 may operate normally. The control logic 300 reads configuration data from the mats 100 and 200 to initialize the configuration.

In operation S220, the control logic 300 reads the configuration data from the mats 100 and 200 in an unpaired read manner as described with reference to FIGS. 5 and 6.

In step S230, the control logic 300 determines whether the data read by the predetermined logic (Pass) Pass (Pass). If all data read from the mats 100 and 200 pass, the process moves to step S240. If at least one of the data read by the mats 100 and 200 is failed, the process moves to step S250.

In operation S240, when all data read from the mats 100 and 200 are pass processed, the control logic 300 stores the configuration data in the buffer 310. The buffer 310 may be inside or outside the control logic 300. The control logic 300 performs initialization of the nonvolatile memory device 1000.

In operation S250, when at least one of the data read by the mats 100 and 200 is failed, the control logic 300 checks the number of times of reading data. If the number of data reads is less than the maximum number of reads, the process moves to step S220. Steps S220 to S230 are repeatedly performed. If the number of data reads exceeds the maximum number of reads, the process moves to step S260.

In operation S260, when the number of data reads exceeds the maximum number of reads, the control logic 300 no longer performs a read operation and processes the set initialization failure of the nonvolatile memory device 1000. This is to prevent the control logic 300 from repeating the data read operation indefinitely.

In the above, the process in which the control logic 300 reads the configuration data has been described. However, there is a case in which user data rather than information data is also important. In this case, user data is also stored in the mats 100 and 200, and main data and dummy data are duplicated and stored in each mat 100 and 200. Can be. Therefore, the unpaired read method is not limited only to reading the information data but may be applied to reading all data.

As described above, the optimum embodiment has been disclosed in the drawings and the specification. Although specific terms have been used herein, they are used only for the purpose of describing the present invention and are not used to limit the scope of the present invention as defined in the meaning or claims. Therefore, those skilled in the art will understand that various modifications and equivalent other embodiments are possible. Therefore, the true technical protection scope of the present invention will be defined by the technical spirit of the appended claims.

100, 200: Matt
110, 210: Cell array
120, 220: row decoder
130, 230: page buffer
300: control logic
310: buffer
1000: nonvolatile memory device

Claims (9)

In a data reading method of a nonvolatile memory device:
Receiving a power supply signal;
Reading first main data and second main data according to the power supply signal;
Reading first dummy data and second dummy data when at least one of the first and second main data has failed to be read;
Reading the first dummy data and the second main data when at least one of the first and second dummy data has failed to be read;
Reading the first main data and the second dummy data when at least one of the first dummy data and the second main data has failed to be read; And
Storing both the first main data and the second dummy data in a buffer of the nonvolatile memory device when both of the first main data and the second dummy data are successfully read;
And the first main and first dummy data are stored in a first mat of the nonvolatile memory device, and the second main and second dummy data are stored in a second mat of the nonvolatile memory device. The method of claim 1,
In the reading of the first main data and the second main data, when both of the first and second main data are successfully read, the first and second main data are stored in a buffer of the nonvolatile memory device. Data read methods. The method of claim 1,
In the reading of the first dummy data and the second dummy data, when both of the first and second dummy data are successfully read, the first and second dummy data are stored in a buffer of the nonvolatile memory device. Data read methods. The method of claim 1,
In the reading of the first dummy data and the second main data, when both of the first dummy data and the second main data are successfully read, the first dummy data and the second main data are not read. A method of reading data stored in a buffer of a volatile memory device. The method of claim 1,
In the reading of the first main data and the second dummy data, when at least one of the first main data and the second dummy data has failed to be read, the first and second main data are read. Data read methods. In a data reading method of a nonvolatile memory device:
Receiving a power supply signal;
Reading first data and second data in an unpaired read manner according to the power supply signal;
Checking the number of readings of the first and second data when at least one of the first and second data has failed to be read; And
If the number of reads of the first and second data exceeds the maximum number of reads, failing to initialize the setting of the nonvolatile memory device;
And the first data is stored in a first mat of the nonvolatile memory device, and the second data is stored in a second mat of the nonvolatile memory device. The method of claim 6,
In the reading of the first data and the second data, when both of the first and second data are successfully read, the first and second data are stored in a buffer of the nonvolatile memory device. . The method of claim 6,
In the checking of the number of readings of the first and second data, when the number of readings of the first and second data is less than or equal to the maximum number of readings, the first and second data in an unpaired read manner. Method of reading data from which is read. A first mat storing first main data and first dummy data;
A second mat for storing second main data and second dummy data;
Control logic to read data in an unpaired read manner in the first and second mats; And
A buffer for storing data read by the control logic,
The contents of the first main and first dummy data are the same, and the contents of the second main and second dummy data are the same.
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US11056200B2 (en) 2019-07-31 2021-07-06 Samsung Electronics Co., Ltd. Nonvolatile memory device and method of controlling initialization of the same
KR102671597B1 (en) 2019-07-31 2024-06-03 삼성전자주식회사 Nonvolatile memory device and method of controlling initialization of the same

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