KR102023705B1 - Plasma reactor for process monitoring - Google Patents

Abstract

Plasma reactors for process monitoring include a tubular ground electrode connected to a vacuum exhaust pipe, a tubular dielectric with tubular spacers coupled to the ground electrode and opposite to the ground electrode, and a dielectric on the outer surface of the dielectric. And a high voltage electrode positioned side by side in the longitudinal direction, and a viewing hole in contact with the spacer and coupled to the end of the dielectric. The high voltage electrode has an interval range from the minimum interval to the maximum interval with respect to the ground electrode, and receives a driving voltage for generating plasma from a power supply.

Description

Plasma reactor for process monitoring {PLASMA REACTOR FOR PROCESS MONITORING}

The present invention relates to a plasma reactor for performing process monitoring by analyzing the exhaust gas of the process chamber.

Semiconductors, displays, solar cells and the like are fabricated in low pressure process equipment with process chambers and vacuum pumps. In the process chamber, operations such as deposition, etching, and cleaning are performed, and a vacuum pump is connected to the process chamber through an exhaust pipe to discharge the process gas.

Process monitoring is a technique for detecting the state of a process chamber, and conventional process monitoring is mainly performed by inducing chemical reactions occurring during a process by observing optical emission emitted from plasma generated inside the process chamber.

However, since the plasma generated inside the process chamber has spatial non-uniformity, a large difference occurs in the spectral intensity depending on the measurement position. In addition, the viewing window for observing the optical emission is contaminated by process by-products so that the measured emission intensity changes with time, and there are a plurality of process chambers in which the viewing window does not exist to prevent contamination of the wafer by the viewing window. do.

Recently, a method of performing process monitoring by installing a residual gas analyzer or installing a plasma reactor in an exhaust pipe behind a process chamber has been proposed. However, unlike process chambers in which process conditions such as flow rate and pressure are strictly controlled by the throttle valve, the exhaust pipe changes pressure rapidly with time, and the generation and maintenance of plasma, such as the passage of many process by-products and undecomposed precursors, is very It is a difficult area.

In addition, the plasma additionally generates various kinds of process by-products and particles, which may contaminate the sight glass.

The present invention is to provide a plasma reactor for process monitoring that can generate a plasma under a variety of process conditions, can maintain a stable plasma, and minimize distortion of the optical emission due to viewing window contamination.

The plasma reactor of one embodiment is connected to a vacuum exhaust pipe at the rear of the process chamber, and process monitoring is performed by analyzing the process gas of the vacuum exhaust pipe over time. The plasma reactor has a tubular ground electrode connected to a vacuum exhaust pipe, a tubular dielectric having a tubular spacer coupled to the ground electrode and opposite to the ground electrode, and parallel to the length direction of the dielectric on the outer surface of the dielectric. And a sight glass coupled to the end of the dielectric and in contact with the spacer. The high voltage electrode has an interval range from the minimum interval to the maximum interval with respect to the ground electrode, and receives a driving voltage for generating plasma from a power supply. The inner diameter of the spacer is smaller than the inner diameter of the dielectric.

The ground electrode may be divided into an inner part located inside the vacuum exhaust pipe and having at least one opening, and an outer part located outside the vacuum exhaust pipe. The inner part may have a shape in which the front is blocked, and the opening may be divided into a first opening positioned upstream of the process gas and a second opening positioned downstream of the process gas.

The inner space of the ground electrode may be composed of a uniform diameter portion and a variable diameter portion located farther from the dielectric than the uniform diameter portion and having an inner diameter that decreases away from the dielectric, and at least one opening may communicate with the variable diameter portion. .

The inner part may include a first part and a second part spaced apart from each other, and a plurality of metal bars integrally coupling the first part and the second part, and an open portion between the plurality of metal bars may function as an opening. .

On the other hand, the ground electrode can be connected to the vacuum exhaust pipe by one connecting port. The inner diameter of the connection port may be smaller than the inner diameter of the ground electrode and may be less than half the inner diameter of the vacuum exhaust pipe. The ground electrode may have at least one opening in communication with the connection port in front of the vacuum exhaust pipe.

The inner space of the ground electrode may be composed of a uniform diameter portion and a variable diameter portion located farther from the dielectric than the uniform diameter portion and smaller in diameter as it moves away from the dielectric, and the variable diameter portion may communicate with the connection port.

On the other hand, the ground electrode may be connected to the vacuum exhaust pipe by a connection port, and the dielectric may be coupled in parallel with the vacuum exhaust pipe on at least one of the upper side and the lower side of the ground electrode.

The connection port may be divided into an inlet port located upstream of the process gas and an outlet port located downstream of the process gas. The plasma reactor may further include an opposing portion fixed between the inlet port and the outlet port inside the ground electrode and facing the inner space of the dielectric.

According to another embodiment, the plasma reactor includes a ground electrode portion, a tubular dielectric, a high voltage electrode, and a sight glass. The ground electrode part includes a tubular ground electrode having an inlet and an outlet, an inlet port connecting the vacuum exhaust pipe and the inlet port, and a discharge port connecting the vacuum exhaust pipe and the outlet port. The tubular dielectric is coupled to the ground electrode and has tubular spacers inside the ends opposite the ground electrode. The high voltage electrode is located in parallel with the longitudinal direction of the dielectric on the outer surface of the dielectric, has a spacing range from the minimum spacing to the maximum spacing with respect to the ground electrode, and receives a driving voltage for generating plasma from a power supply. The sight glass contacts the spacer and is coupled to the end of the dielectric. The inner diameter of the spacer is smaller than the inner diameter of the dielectric.

The inlet can be located closer to the upstream side of the process gas than the outlet, and the diameter of the outlet can be equal to or greater than the diameter of the inlet.

The outlet may be located closer to the dielectric than the inlet, and the length of the outlet port may be greater than the length of the inlet port. The inner space of the ground electrode may be composed of a uniform diameter portion and a variable diameter portion located farther from the dielectric than the uniform diameter portion and having an inner diameter that decreases away from the dielectric. The inlet can communicate with the variable diameter and the outlet can communicate with the uniform diameter.

On the other hand, the inlet can be located closer to the dielectric than the outlet, and the length of the inlet port can be greater than the length of the outlet port. The inner space of the ground electrode may be composed of a uniform diameter portion and a variable diameter portion located farther from the dielectric than the uniform diameter portion and having an inner diameter that decreases away from the dielectric. The inlet can communicate with a uniform diameter and the outlet can communicate with a variable diameter.

An end portion of the dielectric in contact with the viewing window may be surrounded by the dielectric holder, and the distance between the dielectric holder and the high voltage electrode in the longitudinal direction of the dielectric may be greater than the distance between the spacer and the high voltage electrode.

According to another embodiment of the present invention, a plasma reactor includes a tubular ground electrode connected to a vacuum exhaust pipe, a tubular dielectric having tubular spacers coupled to the ground electrode and opposite to the ground electrode, and on an outer surface of the dielectric. And a high voltage electrode positioned parallel to the longitudinal direction of the dielectric, a sight glass contacting the spacer and coupled to the end of the dielectric, and a dielectric holder surrounding the end of the dielectric. The high voltage electrode has an interval range from the minimum interval to the maximum interval with respect to the ground electrode, and receives a driving voltage for generating plasma from a power supply. The inner diameter of the spacer is smaller than the inner diameter of the dielectric, and the length of the spacer along the longitudinal direction of the dielectric is larger than the length of the dielectric holder.

The length of the dielectric may be greater than the length of the high voltage electrode, and the high voltage electrode may be spaced apart from the spacer and the ground electrode along the length direction of the dielectric.

The high voltage electrode may be a tubular electrode that continuously surrounds the dielectric along the circumferential direction of the dielectric, and may receive an alternating current (AC) voltage or a high frequency (RF) voltage from a power supply.

On the other hand, the high voltage electrode may be divided into two high voltage electrodes spaced apart from each other along the circumferential direction of the dielectric. Two high voltage electrodes may receive a bipolar pulse voltage from a power source.

According to the present invention, it is possible to generate a stable plasma in a region where the process gas exhibits a continuous flow state and to suppress the generation of plasma around the viewing window. Therefore, it is possible to generate a stable plasma for a long time even under pressure and gas composition changes, it is possible to minimize the sight window contamination to increase the accuracy of optical emission measurement.

1 is a block diagram of a process equipment having a plasma reactor according to a first embodiment of the present invention.
FIG. 2 is an enlarged cross-sectional view of the plasma reactor shown in FIG. 1.
3 is a perspective view of the plasma reactor shown in FIG.
4 is a configuration diagram illustrating a flow state of a process gas in the plasma reactor shown in FIG. 1.
5 is a configuration diagram of a plasma reactor according to a second embodiment of the present invention.
6 is a configuration diagram of a plasma reactor according to a third embodiment of the present invention.
7 is a configuration diagram of a plasma reactor according to a fourth embodiment of the present invention.
FIG. 8 is an exploded perspective view of the ground electrode in the plasma reactor shown in FIG. 7.
9 is a configuration diagram of a plasma reactor according to a fifth embodiment of the present invention.
FIG. 10 is a cross-sectional view of the plasma reactor cut along the line AA of FIG. 9.
11 is a configuration diagram of a plasma reactor according to a sixth embodiment of the present invention.
12 is a configuration diagram of a plasma reactor according to a seventh embodiment of the present invention.
13 is a configuration diagram of a plasma reactor according to an eighth embodiment of the present invention.
14 is a configuration diagram of a plasma reactor according to a ninth embodiment of the present invention.
15 is a configuration diagram of a plasma reactor according to a tenth embodiment of the present invention.
16 is a configuration diagram of a plasma reactor according to an eleventh embodiment of the present invention.
FIG. 17 is a cross-sectional view of the plasma reactor cut along the line BB of FIG. 16.
18 is a configuration diagram of a plasma reactor according to a twelfth embodiment of the present invention.
19 is a configuration diagram of a plasma reactor according to a thirteenth embodiment of the present invention.
20 is a configuration diagram of a plasma reactor according to a fourteenth embodiment of the present invention.
21 is a configuration diagram of a plasma reactor according to a fifteenth embodiment of the present invention.
22A and 22B are schematic diagrams of a plasma reactor according to a sixteenth exemplary embodiment of the present invention.
23 is a graph showing an analysis result of process gas using the plasma reactor of the first embodiment.
24 is a graph showing an analysis result of process gas using the plasma reactor of the comparative example.
25 to 28 are graphs showing analysis results of process gases using the plasma reactor of the first embodiment performed under various process conditions.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art may easily implement the present invention. As those skilled in the art would realize, the described embodiments may be modified in various different ways, all without departing from the spirit or scope of the present invention.

1 is a block diagram of a process equipment having a plasma reactor according to a first embodiment of the present invention, Figure 2 is an enlarged cross-sectional view of the plasma reactor shown in Figure 1, Figure 3 is a plasma reactor of Figure 1 Perspective view.

1 to 3, the plasma reactor 100 of the first embodiment is installed in the vacuum exhaust pipe 13 at the rear end of the process chamber 11, and the plasma is introduced into the internal space into which the process gas of the vacuum exhaust pipe 13 flows. Generate (P). The spectrometer 14 is connected to the plasma reactor 100 through the optical fiber 15, and analyzes the optical emission emitted from the plasma P to discharge gas components (neutral gas, radicals, Process byproducts, etc.).

The process chamber 11 is a chamber that is installed in a manufacturing line such as a semiconductor, a display, a solar cell, and performs deposition, etching, and cleaning. The vacuum exhaust pipe 13 is connected to the vacuum pump 12 to transfer the process gas used in the process chamber 11 to the vacuum pump 12.

When the vacuum pump 12 is composed of one stage, the plasma reactor 100 is installed in the vacuum exhaust pipe 13 between the process chamber 11 and the vacuum pump 12, the vacuum pump is composed of two stages The plasma reactor 100 may be installed between the first stage vacuum pump and the second stage vacuum pump. 1 illustrates the first case as an example.

Process monitoring information by the plasma reactor 100 and the spectrometer 14 can be used to detect vacuum leakage, to detect the end point of the process, and to perform the cycle of seasoning process and PM (Period Maintenance). Efficient operation of process facilities is possible, such as prediction.

The plasma reactor 100 of the first embodiment installed in the vacuum exhaust pipe 13 can generate stable plasma in a wide pressure range and various gas compositions by the structure described below, and suppresses contamination of the sight glass 50 by Distortion of optical emission can be minimized.

The plasma reactor 100 of the first embodiment has a tubular ground electrode 20 connected to the vacuum exhaust pipe 13, a tubular dielectric 30 coupled to the ground electrode 20, and an outer surface of the dielectric 30. The high voltage electrode 40 is positioned, and the transparent sight glass 50 is coupled to the end of the dielectric 30 through the spacer 35.

The ground electrode 20 may be a cylindrical metal tube, for example, orthogonal to the vacuum exhaust pipe 13, and may be grounded together with the vacuum exhaust pipe 13. A part of the ground electrode 20 may be located inside the vacuum exhaust pipe 13. That is, the ground electrode 20 may be divided into an inner part 21 located inside the vacuum exhaust pipe 13 and an outer part 22 located outside the vacuum exhaust pipe 13.

The inner part 21 of the ground electrode 20 may have a shape in which the front side is blocked. In the inner part 21, a first opening OP1 and a second opening OP2 are formed to allow the internal space of the ground electrode 20 and the internal space of the vacuum exhaust pipe 13 to pass through. The first opening OP1 and the second opening OP2 may face each other along the flow direction of the process gas.

The first opening OP1 may be located upstream of the process gas and the second opening OP2 may be located downstream of the process gas based on the flow direction of the process gas. Part of the process gas discharged from the process chamber 11 is introduced into the ground electrode 20 through the first opening OP1 and flows inside the dielectric 30 in the process of being exhausted by the vacuum pump 12. It is discharged to the vacuum exhaust pipe 13 through the two openings OP2.

The first opening OP1 and the second opening OP2 make a continuous flow path of the process gas into the plasma reactor 100, and suppress the accumulation of the process gas and the process by-products in the plasma reactor 100.

The dielectric 30 is a tubular member and may have the same cylindrical shape as the ground electrode 20 or a cuboid shape different from the ground electrode 20. 3 illustrates a cylindrical dielectric 30 as an example. The dielectric 30 is connected in series with the ground electrode 20 outside the outer portion 22 of the ground electrode 20.

One end of the dielectric 30 may be fitted in a sealed state inside the outer portion 22 of the ground electrode 20, and the inner space of the ground electrode 20 may be in line with the inner space of the dielectric 30. The inner diameter of the ground electrode 20 may be equal to or slightly larger than the inner diameter of the dielectric 30. The dielectric 30 is formed to have a larger length than the high voltage electrode 40 and may be made of alumina, quartz, or the like.

The high voltage electrode 40 is fixed to the outer surface of the dielectric 30 at a distance from the ground electrode 20. The high voltage electrode 40 may be a tubular electrode continuously surrounding the dielectric 30 along the circumferential direction of the dielectric 30 (circumferential direction in the case of a cylindrical shape), and may be connected to the power supply 45 to receive a driving voltage. The driving voltage may be an AC voltage or a radio frequency (RF) voltage.

The capacitively coupled plasma P is generated in the dielectric 30 by the voltage difference between the ground electrode 20 and the high voltage electrode 40. The capacitively coupled plasma P is a discharge type using the wall voltage of the dielectric 30, and can generate stable plasma with a relatively low driving voltage. The discharge region includes a portion of the internal space of the dielectric 30 overlapping the high voltage electrode 40 and an internal space of the ground electrode 20.

As the high voltage electrode 40 is configured in a tubular shape parallel to the longitudinal direction of the dielectric 30, the distance between the ground electrode 20 and the high voltage electrode 40 is not fixed to a single value but is the maximum distance d_max from the minimum distance d_min. Has a predetermined interval range up to

In other words, at the front end of the high voltage electrode 40 toward the ground electrode 20, the distance from the ground electrode 20 is small (minimum spacing, d_min), but the high voltage electrode 40 is located far from the ground electrode 20. At the rear end of the circuit, the distance from the ground electrode 20 becomes a large value (maximum interval, d_max).

According to the known Paschen Curve theory, when the minimum voltage required for plasma generation is called the breakdown voltage (Vb), the discharge start voltage (Vb) is the distance between the electrodes (d) and the pressure (p). ) Is a function of the product of

In a process chamber having an electrode structure having a constant distance between the ground electrode and the high voltage electrode, the pressure must be precisely controlled by using a throttle valve or the like to maintain the glow discharge. However, in the plasma reactor 100 of the first embodiment having a wide range between the ground electrode 20 and the high voltage electrode 40, it is not necessary to precisely control the pressure.

Specifically, the discharge start occurs where the discharge start voltage Vb is minimum according to the p × d condition, and the discharge maintenance moves to the periphery while wall charges are accumulated on the inner wall of the dielectric 30 in contact with the high voltage electrode 40. Discharge off occurs when the wall charge is sufficiently accumulated so that the voltage between the high voltage electrode 40 and the ground electrode 20 is equal to or lower than the discharge start voltage Vb.

The higher the pressure of the vacuum exhaust pipe 13, the closer the starting point of plasma generation is to the front end of the high voltage electrode 40, and the lower the pressure of the vacuum exhaust pipe 13, the closer the starting point of plasma generation is closer to the rear end of the high voltage electrode 40. In all cases, the plasma generated at the starting point diffuses widely into the discharge region. Therefore, the plasma reactor 100 of the first embodiment can generate stable plasma in a wide pressure condition.

The sight glass 50 is coupled to the outer side of the end portion of the dielectric 30 opposite to the ground electrode 20 in a sealed state. The sight glass 50 may be made of a transparent dielectric, for example, glass, quartz, sapphire, or the like. The dielectric holder 61 is positioned on an outer circumferential surface of the end portion of the dielectric 30 in contact with the sight glass 50, and the sight glass holder 62 supporting the sight glass 50 and the optical fiber 15 outside the sight glass 50. Is located. The high voltage electrode 40 and the dielectric holder 61 are located at a distance from each other.

The dielectric holder 61 may be made of metal and may be grounded. In this case, the dielectric holder 61 may function as a ground electrode to induce plasma discharge around the sight glass 50, which may lead to contamination of the sight glass 50.

In order to prevent contamination of the sight glass 50, a spacer 35 having an inner diameter smaller than the inner diameter of the dielectric material 30 is positioned inside the end portion of the dielectric material 30 in contact with the sight glass 50. The spacer 35 has the same tubular shape as the dielectric 30 and narrows the internal space of the dielectric 30 in contact with the sight glass 50 without covering the sight glass 50.

The length L1 of the spacer 35 in the longitudinal direction of the dielectric 30 is greater than the length L2 of the dielectric holder 61, and the end of the spacer 35 is higher than the end of the dielectric holder 61. Closer to 40). The spacer 35 may be manufactured integrally with the dielectric 30. That is, the spacer 35 may be a portion in which a portion of the dielectric 30 is thickened, and as the thickness of the dielectric 30 increases, the discharge is suppressed, thereby effectively suppressing plasma discharge around the spacer 35.

4 is a configuration diagram illustrating a flow state of a process gas in the plasma reactor shown in FIG. 1. 2 and 4, a part of the process gas flowing in the vacuum exhaust pipe 13 is introduced into the plasma reactor 100 through the first opening OP1.

In the internal space of the dielectric 30 close to the spacer 35, the process gas exhibits a stagnant flow state, and continuous flow in the internal space of the ground electrode 20 and the internal space of the dielectric 30 close to the ground electrode 20. Indicates the state. The part in which the process gas exhibits a continuous flow state belongs to the above-described discharge region.

In order to increase the accuracy of the optical emission measurement emitted from the plasma P, it is necessary to suppress the generation of plasma in the vicinity of the sight glass 50 indicating the stagnant flow state. The plasma reactor 100 generates stable plasma in the region where the process gas is continuously flowing, and at the same time, suppresses the generation of plasma around the sight glass 50 using the spacer 35 to increase the accuracy of optical emission measurement. .

In this case, the diameter of each of the first opening OP1 and the second opening OP2 may be less than half of the inner diameter D of the vacuum exhaust pipe 13. When the diameter of the opening is half or less, it means that the area of the opening is 1/4 or less. When the diameter of each of the first opening OP1 and the second opening OP2 is less than or equal to half of the inner diameter D of the vacuum exhaust pipe 13, 25% or less of the process gas of the vacuum exhaust pipe 13 is inside the plasma reactor 100. Since it is introduced into, it is possible to reduce the occurrence of contamination of the plasma reactor (100).

The process gas inside the vacuum exhaust pipe 13 includes a plurality of process byproducts and undecomposed precursors, and the plasma P further generates various kinds of process byproducts. When 25% or more of the process gas of the vacuum exhaust pipe 13 is introduced into the plasma reactor 100, it is not preferable because process by-products generated by the plasma P may contaminate the sight glass 50.

The plasma reactor 100 of the first embodiment can generate stable plasma in the discharge region by using a simple electrode structure of the ground electrode 20 and the high voltage electrode 40, and process gas by the continuous process gas flow of the discharge region. And by preventing the accumulation of process by-products and the like can accurately observe the optical emission.

For example, when SiO ₂ deposition using TEOS (Tetraethyl orthosilicate) and oxygen plasma is performed in a process chamber, TEOS, which is a deposition precursor, and SiO ₂ particles, which are process by-products, may be introduced into and accumulated in the plasma reactor, in which case a stable plasma To prevent occurrence. The plasma reactor 100 of the first embodiment can operate for a long time by maintaining a stable plasma.

In the case of a chemical vapor deposition (CVD) process, it includes a preparation step, a deposition step and a purge step, and a cleaning step may be added between the deposition step and the purge step. In the process chamber 11, plasma discharge is impossible in the purge step and the cleaning step, and plasma discharge is possible only in the deposition step. Continuous process monitoring is difficult using the plasma discharge of the process chamber 11.

However, since the plasma reactor 100 of the first embodiment is installed in the vacuum exhaust pipe 13, plasma discharge is possible in all of the preparation step, the deposition step, the cleaning step, and the purge step, and continuous process monitoring is possible. In addition, although the preparation step, the deposition step, the cleaning step, and the purge step each have different pressure conditions and gas compositions, the wide pressure range and the various gas compositions are due to the wide interval range between the ground electrode 20 and the high voltage electrode 40. Stable plasma can be generated.

5 is a configuration diagram of a plasma reactor according to a second embodiment of the present invention.

Referring to FIG. 5, in the plasma reactor 200 of the second embodiment, the inner space of the ground electrode 20 is a combination of the uniform diameter portion 23 and the variable diameter portion 24, and the ground electrode 20 is It has three openings, namely, the first opening OP1, the second opening OP2, and the third opening OP3.

The uniform diameter portion 23 is located closer to the dielectric 30 than the variable diameter portion 24, and the inner diameter of the variable diameter portion 24 becomes smaller as it moves away from the dielectric 30. The inner diameter of the uniform diameter portion 23 may be equal to or larger than the inner diameter of the dielectric 30, and the maximum inner diameter of the variable diameter portion 24 may be the same as the inner diameter of the uniform diameter portion 23.

The first opening OP1, the second opening OP2, and the third opening OP3 are located inside the ground electrode 20 and are in communication with the variable diameter portion 24. The first opening OP1 is located upstream of the process gas, and the second opening OP2 is located downstream of the process gas. The third opening OP3 is located at the center of the front side of the inner portion 21.

The diameter of each of the first opening OP1, the second opening OP2, and the third opening OP3 may be less than half the inner diameter of the vacuum exhaust pipe 13. A part of the process gas flowing through the vacuum exhaust pipe 13 flows into the ground electrode 20 through the first opening OP1 and flows inside the dielectric 30, and then opens the second opening OP2 and the third opening OP3. It is discharged to the vacuum exhaust pipe 13 through.

An inclined surface surrounding the variable diameter portion 24 in the ground electrode 20 faces the dielectric 30 along the length direction of the dielectric 30 and changes the distance between the high voltage electrode 40 and the ground electrode 20. To function. Therefore, the plasma reactor 200 of the second embodiment can generate stable plasma inside the ground electrode 20 under a wider gas composition and a wider pressure condition.

The plasma reactor 200 of the second embodiment has the same or similar configuration as the above-described first embodiment except for the shape of the ground electrode 20, and overlapping description thereof will be omitted.

6 is a configuration diagram of a plasma reactor according to a third embodiment of the present invention.

Referring to FIG. 6, in the plasma reactor 300 of the third embodiment, the inner diameter of the ground electrode 20 is larger than the inner diameter of the dielectric 30, and a plurality of minute openings OP is positioned in front of the inner portion 21. . The plasma reactor 300 of the third embodiment has the same or similar configuration as the above-described first embodiment except for the shape of the ground electrode 20, and overlapping description thereof will be omitted.

7 is a configuration diagram of a plasma reactor according to a fourth embodiment of the present invention, Figure 8 is an exploded perspective view of the ground electrode of the plasma reactor shown in FIG.

7 and 8, in the plasma reactor 400 of the fourth embodiment, the inner part 21 of the ground electrode 20 is separated from each other by the first part 21A and the second part 21B, and the first part. A plurality of metal bars 25 connecting the part 21A and the second part 21B are included.

The first part 21A is integrally connected to the outer portion 22 of the ground electrode 20, and the second part 21B is located farther from the dielectric 30 than the first part 21A. The plurality of metal bars 25 are positioned at a distance from each other along the circumferential direction of the first part 21A and the second part 21B, and both ends thereof are fixed to the first part 21A and the second part 21B. do.

Along the circumferential direction of the inner portion 21, the remaining portions except for the plurality of metal bars 25 function as openings for inflow and outflow of process gas. The ground electrode 20 having a plurality of metal bars 25 is configured to expand the openings compared to the first to third embodiments described above, and the inflow and outflow of the process gas is more smoothly performed.

The plasma reactor 400 of the fourth embodiment has the same or similar configuration as that of the first embodiment described above except for the shape of the ground electrode 20, and overlapping description thereof will be omitted.

FIG. 9 is a configuration diagram of a plasma reactor according to a fifth embodiment of the present invention, and FIG. 10 is a cross-sectional view of the plasma reactor cut along the line A-A of FIG. 9.

9 and 10, in the plasma reactor 500 of the fifth embodiment, the ground electrode 20 has four openings, that is, a second opening OP2 and a third opening OP3 and two fourth openings ( OP4). The second opening OP2 is located downstream of the process gas, and the third opening OP3 is located in front of the inner portion 21.

The two fourth openings OP4 are spaced 90 ° with respect to the second opening OP2 on the same circumference as the second opening OP2. That is, the two fourth openings OP2 are positioned at the left and right sides of the inner part 21 and are spaced 90 ° from both the upstream side and the downstream side of the process gas.

The ground electrode 20 does not form an opening upstream of the process gas. As a result, the process gas of the vacuum exhaust pipe 13 does not flow directly into the ground electrode 20 from the upstream side, but turns around the outer circumferential surface of the ground electrode 20 through two fourth openings OP4 and a third opening OP3. After being introduced into the ground electrode 20 and the dielectric 30, it is discharged into the vacuum exhaust pipe 13 through the second opening OP2.

The plasma reactor 500 of the fifth embodiment has the same or similar configuration as the above-described first embodiment except for the shape of the ground electrode 20, and overlapping description thereof will be omitted.

In the above-described first to fifth embodiments, the ground electrode 20 has an inner portion 21 and has a configuration in which at least one opening is positioned in the inner portion 21. In the sixth to eighth embodiments described below, the ground electrode 20 is spaced apart from the vacuum exhaust pipe 13 and has at least one opening through which inlet and outlet of the process gas are simultaneously performed.

11 is a configuration diagram of a plasma reactor according to a sixth embodiment of the present invention.

Referring to FIG. 11, in the plasma reactor 600 of the sixth embodiment, the ground electrode 20 is spaced apart from the vacuum exhaust pipe 13, and a connection port 71 is disposed between the ground electrode 20 and the vacuum exhaust pipe 13. Position and connect the ground electrode 20 and the vacuum exhaust pipe (13). The inner diameter of the connection port 71 is smaller than the inner diameter of the ground electrode 20.

The inner diameter of the connection port 71 may be set to less than half the inner diameter of the vacuum exhaust pipe 13 so that 25% or less of the process gas flowing through the vacuum exhaust pipe 13 may be introduced into the plasma reactor 600. The ground electrode 20 has one opening OP at the front side toward the vacuum exhaust pipe 13, and the connection port 71 has an opening OP of the ground electrode 20 and an inner space of the vacuum exhaust pipe 13. Let through.

The process gas of the vacuum exhaust pipe 13 flows into the ground electrode 20 through the connection port 71 and the opening OP, flows inside the dielectric 30, and then again through the opening OP and the connection port 71. It is discharged to the vacuum exhaust pipe 13. When the pressure inside the vacuum exhaust pipe 13 changes, the length of the process gas penetrating into the plasma reactor 600 also changes. As the pressure decreases, the diffusion of the process gas increases, so that the process gas diffuses into the plasma reactor 600. It is done smoothly.

The plasma reactor 600 of the sixth embodiment has the same or similar configuration as the above-described first embodiment except for the ground electrode 20 and the connection port 71, and overlapping description thereof will be omitted.

12 is a configuration diagram of a plasma reactor according to a seventh embodiment of the present invention.

Referring to FIG. 12, in the plasma reactor 700 of the seventh exemplary embodiment, the ground electrode 20 includes a plurality of fine openings OP in front of the vacuum exhaust pipe 13, and the connection port 71 includes a plurality of connection ports 71. Through the micro-opening OP and the internal space of the vacuum exhaust pipe 13. The plasma reactor 700 of the seventh embodiment has the same or similar configuration as the sixth embodiment described above except for the plurality of fine openings OP.

13 is a configuration diagram of a plasma reactor according to an eighth embodiment of the present invention.

Referring to FIG. 13, in the plasma reactor 800 of the eighth embodiment, the inner space of the ground electrode 20 is a combination of the uniform diameter portion 23 and the variable diameter portion 24, and the ground electrode 20 is It has one opening OP which communicates with the connection port 71.

The uniform diameter portion 23 is located closer to the dielectric 30 than the variable diameter portion 24, and the inner diameter of the variable diameter portion 24 becomes smaller as it moves away from the dielectric 30. The inner diameter of the uniform diameter portion 23 may be equal to or larger than the inner diameter of the dielectric 30, and the maximum inner diameter of the variable diameter portion 24 may be the same as the inner diameter of the uniform diameter portion 23.

An inclined surface surrounding the variable diameter portion 24 in the ground electrode 20 faces the dielectric 30 along the length direction of the dielectric 30 and changes the distance between the high voltage electrode 40 and the ground electrode 20. To function. Therefore, the plasma reactor 800 of the eighth embodiment can generate stable plasma inside the ground electrode 20 under a wider variety of gas compositions and wider pressure conditions.

The plasma reactor 800 of the eighth embodiment has the same or similar configuration as the sixth embodiment described above except for the shape of the ground electrode 20, and overlapping description thereof will be omitted.

In the plasma reactors 600, 700, and 800 of the sixth to eighth embodiments, the ground electrode 20 is connected to the vacuum exhaust pipe 13 by one connection port 71 having a diameter smaller than that of the ground electrode 20. It has the characteristic of being connected, and the effect which the inflow amount of a precursor, particle by-products, etc. can reduce can be acquired.

The amount of process by-products, such as precursors and particles, included in the process gas varies from process to process, but is generally high in the order of atomic layer deposition (ALD), chemical vapor deposition (CVD), etching, and sputtering. Process pressures also vary from process to process, but are generally high in the order of chemical vapor deposition (CVD), atomic layer deposition (ALD), etching, and sputtering. As the process pressure is lower, the diffusibility of the process gas and the plasma is improved, so that a bulky plasma can be obtained.

The appropriate plasma reactor is selected from among the plasma reactors 100, 200, 300, 400, 500, 600, 700, and 800 of the first to eighth embodiments described above according to the process pressure and the amount of process by-products included in the process gas. Can be.

14 is a configuration diagram of a plasma reactor according to a ninth embodiment of the present invention.

Referring to FIG. 14, in the plasma reactor 900 of the ninth embodiment, the ground electrode 20 is connected to the front side of the vacuum exhaust pipe 13 by one connection port 71, and the dielectric 30 is connected to the vacuum exhaust pipe ( It is coupled to the ground electrode 20 to be parallel with 13). In this case, the dielectric 30 'parallel' with the vacuum exhaust pipe 13 includes both the case parallel to the exhaust pipe 13 and the case where the dielectric 30 is inclined with respect to the vacuum exhaust pipe 13 within a predetermined error range.

The inner diameter of the connection port 71 may be set to less than half of the inner diameter of the vacuum exhaust pipe 13 to allow 25% or less of the process gas flowing through the vacuum exhaust pipe 13 to flow into the plasma reactor 900.

The dielectric 30 may be coupled to the upper side of the ground electrode 20 so that the sight glass 50 faces upward, or coupled to the lower side of the ground electrode 20 so that the sight glass 50 faces sideward or downward. Can be. In FIG. 14, the first case is illustrated as an example. A part of the process gas flowing in the vacuum exhaust pipe 13 flows into the ground electrode 20 through the connection port 71, flows inside the dielectric 30, and is discharged back to the vacuum exhaust pipe 13 through the connection port 71. do.

An additional connection port (not shown) may be installed at the bottom of the ground electrode to allow the process gas to be discharged more smoothly, through the bottom of the ground electrode and through the vacuum exhaust pipe.

The plasma reactor 900 of the ninth embodiment has the same or similar configuration as that of the sixth embodiment described above, except that the dielectric 30 is coupled to the ground electrode 20 so as to be parallel to the vacuum exhaust pipe 13. The description will be omitted.

15 is a configuration diagram of a plasma reactor according to a tenth embodiment of the present invention.

Referring to FIG. 15, in the plasma reactor 1000 of the tenth embodiment, the ground electrode 20 is connected to the vacuum exhaust pipe 13 by an inlet port 72 and an outlet port 73. The inlet port 72 is located upstream of the process gas and the outlet port 73 is located downstream of the process gas. The inner diameter of each of the inlet port 72 and the outlet port 73 may be less than half the inner diameter of the vacuum exhaust pipe 13.

A part of the process gas flowing through the vacuum exhaust pipe 13 flows into the ground electrode 20 through the inflow port 72, flows inside the dielectric 30, and is discharged into the vacuum exhaust pipe 13 through the discharge port 73. . The plasma reactor 1000 of the tenth embodiment has the same or similar configuration as the ninth embodiment described above except for the inlet port 72 and the outlet port 73.

FIG. 16 is a configuration diagram of a plasma reactor according to an eleventh embodiment of the present invention, and FIG. 17 is a cross-sectional view of the plasma reactor cut along the line B-B of FIG. 16.

16 and 17, in the plasma reactor 1100 of the eleventh embodiment, the ground electrode 20 includes an opposing portion 26 located therein. The opposing portion 26 is disposed orthogonal to the dielectric 30 between the inlet port 72 and the outlet port 73 and faces the interior space of the dielectric 30.

The ground electrode 20 may have a cylindrical shape that looks circular when viewed from above with reference to the drawings, and the opposing portion 26 may have an approximate disk shape. One side of the opposed portion 26 facing the vacuum exhaust pipe 13 is fixed to the inner wall of the ground electrode 20 between the inlet port 72 and the outlet port 73 by the support 27, and is in contact with the support 27. The remaining edge of the opposing portion 26 except for the portion is spaced apart from the inner wall of the ground electrode 20.

A part of the process gas flowing in the vacuum exhaust pipe 13 flows into the ground electrode 20 through the inlet port 72, flows inside the dielectric 30, and then returns to the opposite part 26 through the outlet port 73. It is discharged to the vacuum exhaust pipe 13. At this time, the opposing portion 26 has a configuration in which one side away from the vacuum exhaust pipe 13 is cut (see FIG. 17A) or includes a plurality of through holes 28 aligned in the circumferential direction (FIG. 17). 17 (b)) It is possible to smooth the flow of the process gas.

The opposing portion 26 maintains a ground potential as part of the ground electrode 20 and faces the inner center of the dielectric 30. The plasma reactor 1100 of the eleventh embodiment may generate stable plasma inside the dielectric 30 and over the opposing portion 26.

The plasma reactor 1100 of the eleventh embodiment has the same or similar configuration as the above-described tenth embodiment except for the opposing portion 26, and overlapping description thereof will be omitted.

18 is a configuration diagram of a plasma reactor according to a twelfth embodiment of the present invention.

Referring to FIG. 18, the plasma reactor 1200 of the twelfth embodiment includes a ground electrode portion 80 composed of a ground electrode 81, an inlet port 82, and an outlet port 83.

The ground electrode 81 is a tubular electrode that intersects, for example, orthogonal to, the vacuum exhaust pipe 13, and has an inlet 811 and an outlet 812. The dielectric 30 is connected in line with the ground electrode 81 at one side of the ground electrode 81 opposite to the vacuum exhaust pipe 13. The inner space of the ground electrode 81 extends in line with the inner space of the dielectric 30.

The inlet 811 is located closer to the upstream side of the process gas than the outlet 812 and can be located in front of the ground electrode 81 facing the vacuum exhaust pipe 13. The outlet 812 may be located below the ground electrode 81 on the opposite side of the ground electrode 81 toward the dielectric 30. The outlet 812 can be located closer to the dielectric 30 than the inlet 811.

The diameters D1 and D2 of each of the inlet 811 and the outlet 812 are set to less than or equal to half of the inner diameter of the vacuum exhaust pipe 13 so that 25% or less of the process gas flowing through the vacuum exhaust pipe 13 is inside the plasma reactor 1200. Can be introduced into the In addition, the diameter D2 of the outlet 812 is set equal to or larger than the diameter D1 of the inlet 811 so that the process gas that has undergone the plasma discharge can be smoothly discharged.

An inlet port 82 is installed between the vacuum exhaust pipe 13 and the inlet 811 so as to pass through the vacuum exhaust pipe 13 and the inlet 811, and the discharge port 83 is the outlet 812 and the vacuum exhaust pipe 13. Installed between the outlet 812 and the vacuum exhaust pipe 13. The inner diameter of the inlet port 82 may be equal to the inlet 811 and the diameter D1, and the inner diameter of the outlet port 83 may be the same as the diameter D2 of the outlet 812.

The length of the outlet port 83 is greater than the length of the inlet port 82. For example, the inlet port 82 may be a short straight port and the outlet port 83 may consist of a 90 ° curved port with two straight sections perpendicular to each other.

A part of the process gas flowing through the vacuum exhaust pipe 13 flows into the ground electrode 81 through the inlet port 82 and the inlet 811, flows into the dielectric 30, and then discharges the outlet 812 and the discharge port 83. Is discharged to the vacuum exhaust pipe (13) through. At this time, since the outlet 812 is located closer to the dielectric 30 than the inlet 811, the process gas subjected to the plasma reaction can be rapidly evacuated through the outlet 812 without moving to the inlet 811. You can exit.

In the plasma reactor 1200 of the twelfth embodiment, the above-described configuration of the ground electrode unit 80 facilitates the discharge of the process gas introduced therein, thereby suppressing the accumulation of the process gas and the process by-products, etc., As a result, contamination of the viewing window 50 and distortion of the optical emission may be minimized.

The plasma reactor 1200 of the twelfth embodiment has the same or similar configuration as that of the first embodiment described above except for the ground electrode unit 80, and overlapping description thereof will be omitted.

19 is a configuration diagram of a plasma reactor according to a thirteenth embodiment of the present invention.

Referring to FIG. 19, in the plasma reactor 1300 of the thirteenth embodiment, the inner space of the ground electrode 81 is a combination of a uniform diameter portion 84 and a variable diameter portion 85. The uniform diameter portion 84 is located between the dielectric 30 and the variable diameter portion 85, and the inner diameter of the variable diameter portion 85 becomes smaller as it moves away from the dielectric 30.

The inner diameter of the uniform diameter portion 84 may be equal to or greater than the inner diameter of the dielectric 30, and the maximum inner diameter of the variable diameter portion 85 may be the same as the inner diameter of the uniform diameter portion 84. Outlet 812 may communicate with uniform diameter 84, and inlet 811 may communicate with variable diameter 85. The minimum inner diameter of the variable diameter portion 85 may be equal to the diameter D1 of the inlet 811.

An inclined surface surrounding the variable diameter portion 85 in the ground electrode 81 faces the dielectric 30 along the length direction of the dielectric 30 and changes the distance between the high voltage electrode 40 and the ground electrode 81. To function. Therefore, the plasma reactor 1300 of the thirteenth embodiment can generate stable plasma inside the ground electrode 81 under a wider gas composition and a wider pressure condition.

The plasma reactor 1300 of the thirteenth embodiment has the same or similar configuration as that of the twelfth embodiment described above except for the shape of the ground electrode 81, and overlapping description thereof will be omitted.

20 is a configuration diagram of a plasma reactor according to a fourteenth embodiment of the present invention.

Referring to FIG. 20, in the plasma reactor 1400 of the fourteenth embodiment, the inlet 811 of the ground electrode 81 is located closer to the dielectric 30 than the outlet 812 of the ground electrode 81. The length of the 82 is greater than the length of the discharge port 83. The diameter D2 of the outlet 812 and the inner diameter of the discharge port 83 are equal to or larger than the diameter D1 of the inlet 811 and the inner diameter of the inlet port 82 so as to smoothly discharge the process gas.

The outlet 812 may be located in front of the ground electrode 81 towards the vacuum exhaust pipe 13, and the inlet 811 may be located at the back of the ground electrode 81 toward the dielectric 30. It may be located above. The discharge port 83 may be a short straight port, and the inlet port 82 may be configured as a 90 ° curved port having two straight portions perpendicular to each other.

In a process where a large amount of byproduct particles are discharged, such as chemical vapor deposition (CVD), the byproduct particles may accumulate in the inlet port 82 while passing through the inlet port 82. As a result, the amount of particles introduced into the dielectric 30 (the discharge region) may be reduced, and thus more accurate gas analysis may be performed.

The plasma reactor 1400 of the fourteenth embodiment has the same or similar configuration as that of the twelfth embodiment except for the ground electrode unit 80, and overlapping description thereof will be omitted.

21 is a configuration diagram of a plasma reactor according to a fifteenth embodiment of the present invention.

Referring to FIG. 21, in the plasma reactor 1500 of the fifteenth embodiment, the inner space of the ground electrode 81 is a combination of a uniform diameter portion 84 and a variable diameter portion 85. The uniform diameter portion 84 is located between the dielectric 30 and the variable diameter portion 85, and the inner diameter of the variable diameter portion 85 becomes smaller as it moves away from the dielectric 30.

The inner diameter of the uniform diameter portion 84 may be equal to or greater than the inner diameter of the dielectric 30, and the maximum inner diameter of the variable diameter portion 85 may be the same as the inner diameter of the uniform diameter portion 84. Inlet 811 may communicate with uniform diameter 84, and outlet 812 may communicate with variable diameter 85. The minimum diameter of the variable diameter portion 85 may be equal to the diameter D2 of the outlet 812.

An inclined surface surrounding the variable diameter portion 85 in the ground electrode 81 faces the dielectric 30 along the length direction of the dielectric 30 and changes the distance between the high voltage electrode 40 and the ground electrode 81. To function. Therefore, the plasma reactor 1500 of the fifteenth embodiment can generate stable plasma inside the ground electrode 81 under a wider gas composition and a wider pressure condition.

The plasma reactor 1500 of the fifteenth embodiment has the same or similar configuration as that of the fourteenth embodiment described above except for the shape of the ground electrode 81, and overlapping description thereof will be omitted.

22A and 22B are schematic diagrams of a plasma reactor according to a sixteenth exemplary embodiment of the present invention.

Referring to FIG. 22A, in the plasma reactor 1600 of the sixteenth embodiment, the dielectric 30 has a rectangular parallelepiped shape, and two high voltage electrodes 40 are positioned outside two facing surfaces of the dielectric 30.

On the other hand, only the top and bottom of the cuboid can be made of a dielectric, and the other two sides can be made of metal. In this case, the two high voltage electrodes 40 are located outside of the two dielectrics. On the other hand, only the top of the cuboid can be made of a dielectric, and the bottom and two sides can be made of metal. In this case, one high voltage electrode is positioned outside the dielectric, and the lower portion of the rectangular parallelepiped may function as another high voltage electrode.

Referring to FIG. 22B, in the plasma reactor 1600 of the sixteenth embodiment, the dielectric 30 has a cylindrical shape, and two high voltage electrodes 40 are spaced apart from each other along the circumferential direction (circumferential direction) of the dielectric 30. do. As a result, in the plasma reactor 1600 of the sixteenth embodiment, the high voltage electrode 40 is divided into two high voltage electrodes spaced apart from each other along the circumferential direction of the dielectric 30.

The two high voltage electrodes 40 may be connected to the same power source and may receive the same driving voltage or the bipolar pulse voltage. Bipolar pulse voltages mean two pulse voltages with opposite polarities, that is, 180 ° out of phase. Each of the two pulse voltages may be any one of a triangular wave, a sine wave, and a sine wave, but is not limited thereto.

When a bipolar pulse voltage is applied to the two high voltage electrodes 40, the discharge voltage is twice the pulse voltage. Therefore, the driving voltage can be lowered while generating the plasma having the same intensity as when the same driving voltage is applied to the two high voltage electrodes 40.

The plasma reactor 1600 of the sixteenth embodiment has the same or similar configuration as any one of the above-described first to fifteenth embodiments except that the high voltage electrode 40 is provided in two, and the overlapping description is Omit.

FIG. 23 is a graph showing an analysis result of process gas using the plasma reactor of Example 1, and FIG. 24 is a graph showing an analysis result of process gas using the plasma reactor of Comparative Example. In the plasma reactor of the comparative example, the upper and lower parts are made of a dielectric material, two sides are made of metal, and a high voltage electrode and a ground electrode are respectively located outside the two dielectric materials.

23 and 24 show the analysis results of the process gas discharged from the purge process using nitrogen in the chemical vapor deposition chamber, and the intensity for each wavelength according to the pressure. In Figures 23 and 24, the unit of intensity A.U. (Arbitary Unit) represents an arbitrary unit.

Referring to FIGS. 23 and 24, the optical reactor can be measured at a low pressure of 5 mTorr using the plasma reactor of the first embodiment, but the optical emission can be measured only at a pressure of 300 mTorr or more using the plasma reactor of the comparative example. Can be.

That is, although the plasma reactor of the comparative example has a very limited pressure range in which the optical emission measurement is possible, the plasma reactor of the first embodiment can be applied to a wider variety of process facilities because accurate optical emission measurement is possible even at a low pressure of 300 mTorr or less. .

25 to 28 are graphs showing analysis results of process gas using the plasma reactor of the first embodiment in a chemical vapor deposition (CVD) process. In FIGS. 25 to 28, the unit of intensity A.U. (Arbitary Unit) represents an arbitrary unit.

25 is an analysis result of the process gas discharged in the purge step (pressure: 10mTorr) using nitrogen, Figure 26 is an analysis result of the process gas discharged in the purge step (pressure: 20mTorr) using helium and oxygen. FIG. 27 is an analysis result of the process gas discharged from the deposition of SiO ₂ using helium, oxygen, and TEOS (pressure: 300 mTorr), and FIG. 28 is discharged from the cleaning step (pressure: 400 mTorr) using helium, oxygen, and NF ₃ . The analysis result of a process gas is shown.

25 to 28, the plasma reactor according to the first embodiment installed in the vacuum exhaust pipe can confirm that accurate optical emission measurement is possible in various process conditions having different gas compositions and pressures, that is, purge step, deposition step, and cleaning step. Can be.

Although the preferred embodiments of the present invention have been described above, the present invention is not limited thereto, and various modifications and changes can be made within the scope of the claims and the detailed description of the invention and the accompanying drawings. Naturally, it belongs to the range of.

11: process chamber 12: vacuum pump
13: vacuum exhaust pipe 14: spectrometer
15: optical fiber 20: ground electrode
30: dielectric 35: spacer
40: high voltage electrode 45: power supply
50: sight window 61: dielectric holder
62: window holder 71: connection port
72: inlet port 73: outlet port

Claims (22)

A plasma reactor connected to a vacuum exhaust pipe at a rear end of a process chamber and analyzing the process gas of the vacuum exhaust pipe to perform process monitoring,
A tubular ground electrode connected to the vacuum exhaust pipe;
A tubular dielectric coupled to the ground electrode and having a tubular spacer on an inner side of the end opposite to the ground electrode;
A high voltage electrode disposed on an outer surface of the dielectric and having an interval range from a minimum interval to a maximum interval with respect to the ground electrode, and receiving a driving voltage for generating plasma from a power source; And
A sight glass coupled to the end of the dielectric and in contact with the spacer;
The spacer has an inner diameter smaller than the inner diameter of the dielectric, and narrows the inner space of the end of the dielectric in contact with the sight glass. The method of claim 1,
The ground electrode may be divided into an inner part which is located inside the vacuum exhaust pipe and has at least one opening, and an outer part which is located outside the vacuum exhaust pipe. The method of claim 2,
The inner part has a shape in which the front is blocked, and the opening is divided into a first opening located upstream of the process gas and a second opening located downstream of the process gas. The method of claim 2,
The inner space of the ground electrode is composed of a uniform diameter portion and a variable diameter portion that is located farther from the dielectric than the uniform diameter portion and the inner diameter decreases away from the dielectric, the at least one opening is the variable diameter portion And a plasma reactor. The method of claim 2,
The inner part includes a first part and a second part spaced apart from each other, and a plurality of metal bars integrally coupling the first part and the second part, and an open portion between the plurality of metal bars functions as the opening. Plasma reactor. The method of claim 1,
The ground electrode is connected to the vacuum exhaust pipe by one connecting port,
The inner diameter of the connection port is smaller than the inner diameter of the ground electrode, and less than half of the inner diameter of the vacuum exhaust pipe plasma reactor. The method of claim 6,
The ground electrode having at least one opening in communication with the connection port in front of the vacuum exhaust pipe. The method of claim 6,
The inner space of the ground electrode is composed of a uniform diameter portion and a variable diameter portion located farther from the dielectric than the uniform diameter portion and smaller in diameter as it moves away from the dielectric, and the variable diameter portion communicates with the connection port. Reactor. The method of claim 1,
The ground electrode is connected to the vacuum exhaust pipe by a connecting port,
And the dielectric is coupled in parallel with the vacuum exhaust pipe at at least one of an upper side and a lower side of the ground electrode. The method of claim 9,
The connecting port is divided into an inlet port located upstream of the process gas and a discharge port located downstream of the process gas. The method of claim 10,
And a counter portion fixed between the inlet port and the outlet port inside the ground electrode and facing an inner space of the dielectric. A plasma reactor connected to a vacuum exhaust pipe at a rear end of a process chamber and analyzing the process gas of the vacuum exhaust pipe to perform process monitoring,
A ground electrode part including a tubular ground electrode having an inlet and an outlet, an inlet port connecting the vacuum exhaust pipe and the inlet port, and a discharge port connecting the vacuum exhaust pipe and the outlet port;
A tubular dielectric coupled to the ground electrode and having a tubular spacer on an inner side of the end opposite to the ground electrode;
A high voltage electrode disposed on an outer surface of the dielectric and having an interval range from a minimum interval to a maximum interval with respect to the ground electrode, and receiving a driving voltage for generating plasma from a power source; And
A sight glass coupled to the end of the dielectric and in contact with the spacer;
The spacer has an inner diameter smaller than the inner diameter of the dielectric, and narrows the inner space of the end of the dielectric in contact with the sight glass. The method of claim 12,
The inlet is located closer to the upstream side of the process gas than the outlet, the diameter of the outlet being greater than or equal to the diameter of the inlet. The method of claim 13,
The outlet is located closer to the dielectric than the inlet and the length of the outlet port is greater than the length of the inlet port. The method of claim 14,
The inner space of the ground electrode is composed of a uniform diameter portion and a variable diameter portion located farther from the dielectric than the uniform diameter portion and smaller in diameter as the distance from the dielectric,
The inlet is in communication with the variable diameter portion and the outlet is in communication with the uniform diameter portion. The method of claim 13,
The inlet is located closer to the dielectric than the outlet and the length of the inlet port is greater than the length of the outlet port. The method of claim 16,
The inner space of the ground electrode is composed of a uniform diameter portion and a variable diameter portion located farther from the dielectric than the uniform diameter portion and smaller in diameter as the distance from the dielectric,
The inlet is in communication with the uniform diameter portion and the outlet is in communication with the variable diameter portion. The method according to any one of claims 1 to 17,
An end portion of the dielectric in contact with the sight glass is surrounded by a dielectric holder,
And a distance between the dielectric holder and the high voltage electrode along a length direction of the dielectric is greater than a distance between the spacer and the high voltage electrode. A plasma reactor connected to a vacuum exhaust pipe at a rear end of a process chamber and analyzing the process gas of the vacuum exhaust pipe to perform process monitoring,
A tubular ground electrode connected to the vacuum exhaust pipe;
A tubular dielectric coupled to the ground electrode and having a tubular spacer on an inner side of the end opposite to the ground electrode;
A high voltage electrode disposed on an outer surface of the dielectric and having an interval range from a minimum interval to a maximum interval with respect to the ground electrode, and receiving a driving voltage for generating plasma from a power source;
A sight glass contacting the spacer and coupled to an end of the dielectric; And
A dielectric holder surrounding an end of the dielectric,
And the spacer has an inner diameter smaller than the inner diameter of the dielectric and a length larger than the length of the dielectric holder along a length direction of the dielectric, and narrows an inner space of the end of the dielectric in contact with the viewing window. The method of claim 19,
The length of the dielectric is greater than the length of the high voltage electrode,
The high voltage electrode is spaced apart from the spacer and the ground electrode along the longitudinal direction of the dielectric. The method according to any one of claims 1 to 17, 19, and 20,
The high voltage electrode is a tubular electrode continuously surrounding the dielectric along the circumferential direction of the dielectric, and receives a alternating current (AC) voltage or a high frequency (RF) voltage from the power supply. The method according to any one of claims 1 to 17, 19, and 20,
The high voltage electrode is divided into two high voltage electrodes spaced apart from each other along the circumferential direction of the dielectric, wherein the two high voltage electrodes receive a bipolar pulse voltage from the power source.

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