KR102019072B1

KR102019072B1 - active cliche for large-area printing, manufacturing method of the same, and printing method used the same

Info

Publication number: KR102019072B1
Application number: KR1020130031979A
Authority: KR
Inventors: 양용석; 유인규; 정순원; 나복순; 문석환
Original assignee: 한국전자통신연구원
Priority date: 2012-09-05
Filing date: 2013-03-26
Publication date: 2019-09-10
Also published as: KR20140031781A

Abstract

The present invention discloses a nanoprinting apparatus, a printing method thereof, and a printing method using the same. The apparatus includes an interlayer insulating layer having a substrate, first wirings extending in a first direction on the substrate, holes disposed on the first wirings and partially exposing the first wirings; Second wirings disposed in the interlayer insulating layer adjacent to the holes and extending in a second direction crossing the first wirings, and a portion connected to the first wirings and crossing the second wirings; Each includes wedge electrodes protruding from the center of the holes.

Description

Large area nano printing apparatus, manufacturing method thereof and printing method using the same {active cliche for large-area printing, manufacturing method of the same, and printing method used the same}

TECHNICAL FIELD The present invention relates to a printing apparatus and a method for manufacturing the same, and more particularly, to a large-area nanoprinting apparatus which is operated in an active manner, a manufacturing method thereof and a printing method using the same.

Printed electronics is the manufacture of electronic devices and components or modules through printing technology. In other words, the electronic device can be made from a conductive ink or a functional ink. The conductive ink or functional ink may be formed three-dimensionally on a substrate such as plastic, paper, glass, or silicon. Advantages of such printed electronic process technology are various.

First, printed electronics process technology can replace the expensive silicon semiconductor production equipment of the traditional electronics industry at a low cost, and can significantly reduce costs.

Second, the printed electronics process technology can be a low temperature / high speed / simple / environmentally friendly process. Printed electronic process is suitable for low temperature process, it is possible to implement an electronic device on a flexible plastic substrate it is possible to implement a flexible product. Compared with the existing semiconductor manufacturing process, the process steps are greatly reduced and simple. Also, high-speed manufacturing is possible through a roll-to-roll (R2R) continuous process. Eco-friendly processes are also possible by reducing the consumption of various energy such as electricity used for production.

Third, large area is possible through R2R continuous process, which is suitable for large panel production and mass production. Lastly, it is expected to lower the cost of products by utilizing organic electronic materials that are cheaper than silicon devices.

On the other hand, there are disadvantages and limitations, typically lack of performance and density. This is a limitation of materials and process technology, which is still inferior in performance and integration degree to existing electronic devices or fabrication methods, and thus, research is required for nano-size patterning. Several research groups have developed nanoimprint methods, electrohydrodynamic inkjet printing methods, micro imprint methods, and micro molding methods for nanoscale printing, but show large area and high throughput performance. There are several limitations to the flag.

Nanoimprint process is largely divided into heat transfer process and pattern transfer method through curing by UV irradiation. In order to perform the nanoimprint process, it is necessary to produce a stamp that acts as a mask pattern of the photo process, but it is simpler than the conventional lithography technology and the equipment itself is much cheaper than the next generation of optical-based (EUV, X-ray) lithography equipment. have. Although nanoimprint technology has the advantage of making it possible to easily make nanoscale patterns in a single step, it is necessary to solve many problems from stamp materials to completely replace the existing photolithography process.

Another technique for manufacturing nanoscale electronic devices using printing processes is electrohydrodynamics (EHD) inkjet printing or electro-spinning. This method allows the formation of μm-thick organic or inorganic wires without separate patterning process. When a solution of the material to be patterned is formed into droplets and an electric field is applied between the substrate and the droplets, the strength of the electric field is increased. As soon as the droplet's surface tension is greater than it, the droplet is dragged like a thread and sticks onto the substrate. At this time, the size of the dragged drop can be adjusted to the micrometer or sub-micrometer width. However, since the conventional electric spin method uses a method of ejecting from a nozzle like an inkjet print, there is a limit to showing a large area and high throughput performance.

An object of the present invention is to provide a nano printing apparatus capable of realizing a large area printing, a manufacturing method thereof and a nano printing method using the same.

Nano printing apparatus according to an embodiment of the present invention, the substrate; First wirings extending in a first direction on the substrate; An interlayer insulating layer disposed on the first wires and having holes partially exposing the first wires; Second wirings disposed in the interlayer insulating layer adjacent to the holes and extending in a second direction crossing the first wirings; And wedge electrodes connected to the first wires and protruding from the centers of the holes at portions intersecting the second wires.

According to one embodiment of the present invention, the wedge electrodes may have a conical shape.

According to another embodiment of the present invention, the tip of the wedge electrode of the conical shape may further include.

According to an embodiment of the present invention, the tip is a nano printing device comprising a carbon nanotube.

According to another embodiment of the present invention, the wedge electrode nano-printing apparatus comprising molybdenum.

According to an embodiment of the present disclosure, the second wirings may include a ring electrode having an inner diameter and an outer diameter around the holes and surrounding the holes.

According to another embodiment of the present invention, the ring electrode may have an inner diameter larger than the holes.

According to an embodiment of the present disclosure, the first wires may include a bottom plate overlapping the ring electrode and disposed under the wedge electrode and exposed from the holes.

According to another embodiment of the present invention, the holes may have a minimum diameter of 4 micrometers.

According to an embodiment of the present disclosure, the holes and the wedge electrodes may be arranged in a matrix form by the first wires and the second wires.

According to another embodiment of the present invention, a data driver connected to the first wires; And a scan driver connected to the second wires.

According to an embodiment of the present disclosure, the first wiring and the second wiring may include at least one of gold, silver, copper, aluminum, tungsten, tantalum, titanium, and nickel.

According to another embodiment of the present invention, the interlayer insulating layer may include a first interlayer insulating layer covering the first wires; And a second interlayer insulating layer covering the first interlayer insulating layer and the second wires.

According to an embodiment of the present disclosure, the first interlayer insulating layer and the second interlayer insulating layer may include a silicon oxide film or a silicon nitride film.

According to another aspect of the present invention, there is provided a method of manufacturing a nanoprinting apparatus, including forming first wirings extending in a first direction on a substrate; Forming a first interlayer insulating layer on the first wirings; Forming second wirings on the first interlayer insulating layer, the second wirings having a ring electrode extending in a second direction crossing the first direction and overlapping the first wirings; Forming a second interlayer insulating layer on the second wiring and the first interlayer insulating layer; Removing a second interlayer insulating layer in the ring electrode and a first interlayer insulating layer under the second interlayer insulating layer to form holes partially exposing the first wires; And forming wedge electrodes on the first wires in the holes.

According to an embodiment of the present disclosure, the method may further include forming a sacrificial layer on the second interlayer insulating layer before forming the holes.

According to another embodiment of the present disclosure, the forming of the wedge electrodes may include forming the wedge electrodes on the first wiring layers in the holes and forming a metal layer on the sacrificial layer; And removing the sacrificial layer to lift off the metal layer on the sacrificial layer.

According to an embodiment of the present invention, the metal layer and the wedge electrode may be formed by a gradient deposition method.

According to another embodiment of the present invention, the hole may be formed with a smaller diameter than the ring electrode.

The nanoprinter according to the embodiment of the present invention may include a substrate, first wirings, an interlayer insulating layer, second wirings, and wedge electrodes. The first wires may extend in a first direction on the substrate. The interlayer insulating layer may have holes covering the first wires and partially exposing the first wires. The second wiring may extend in the second direction on the interlayer insulating layer. The second wiring can have ring electrodes surrounding the edges of the holes. The wedge electrodes can be disposed on the first wires in the holes. Ink may be applied onto the wedge electrodes. The ink may be separated from the wedge electrodes by electromagnetic force. Electromagnetic forces can be induced between the wedge electrodes and the ring electrodes. The first wires and the second wires may define pixels. Wedge electrodes and ring electrodes may correspond to the pixels. The first wires and the second wires may be connected to the data driver and the scan driver, respectively. The pixels may be actively driven by signals of the data driver and the scan driver.

Therefore, the nano printing apparatus according to the embodiment of the present invention can realize a large area printing.

1 is a plan view showing a nano printing apparatus according to an embodiment of the present invention.
FIG. 2 is a detailed perspective view of the pixel of FIG. 1. FIG.
3 is a view showing the ink between the wedge electrode and the ring electrode of FIG.
4 to 10 are process perspective views showing a method of manufacturing a nano printing apparatus according to an embodiment of the present invention based on FIG.
11 to 13 are views for explaining the printing method using the nano-printing apparatus of the present invention.
14 is a perspective view showing a nano printing apparatus according to an application example of the present invention.

Advantages and features of the present invention, and methods for achieving them will be apparent with reference to the embodiments described below in detail in conjunction with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but may be implemented in various forms, and only the present embodiments are intended to complete the disclosure of the present invention, and the general knowledge in the art to which the present invention pertains. It is provided to fully convey the scope of the invention to those skilled in the art, and the present invention is defined only by the scope of the claims. Like reference numerals refer to like elements throughout the specification.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. In this specification, the singular also includes the plural unless specifically stated otherwise in the phrase. As used herein, a component, step, operation and / or element, referred to as 'comprises' and / or 'comprising', is the presence of one or more other components, steps, operations and / or elements. Or does not exclude additions.

In addition, the embodiments described herein will be described with reference to cross-sectional and / or plan views, which are ideal exemplary views of the present invention. In the drawings, the thicknesses of films and regions are exaggerated for effective explanation of technical content. Accordingly, shapes of the exemplary views may be modified by manufacturing techniques and / or tolerances. Accordingly, the embodiments of the present invention are not limited to the specific forms shown, but also include variations in forms generated by the manufacturing process. For example, the etched regions shown at right angles may be rounded or have a predetermined curvature. Accordingly, the regions illustrated in the figures have schematic attributes, and the shape of the regions illustrated in the figures is intended to illustrate a particular form of region of the device and not to limit the scope of the invention.

1 is a plan view showing a nano printing apparatus according to an embodiment of the present invention. FIG. 2 is a detailed perspective view of the pixel of FIG. 1. FIG.

1 and 2, a nano printing apparatus according to an exemplary embodiment of the present invention may include a substrate 10, first wirings 20, an interlayer insulating layer 30, second wirings 40, and a wedge. It may include an electrode (50).

Substrate 10 may comprise glass or silicon. First wirings 20 may be disposed on the substrate 10. The first wires 20 may extend in the first direction. The first wirings 20 may include gold (Au), silver (Ag), copper (Cu), aluminum (Al), tungsten (W), chromium (Cr), nickel (Ni), or carbon nanotubes. It may include. The first wires 20 may have bottom plates 22 regularly formed at regular intervals. The bottom plates 22 may be disposed in the second direction between the first wires 20. The second direction may intersect the first direction. The first wires 20 may be connected to the first pad 24. The first pad 24 may be a data driver.

An interlayer insulating layer 30 may be disposed on the first wires 20. The interlayer insulating layer 30 may have a first hole 36 partially exposing the bottom plate 22 of the first wires 20. The first hole 36 may be formed in a circular shape. The first hole 36 may have a diameter of about 0.1 to 10 μm. Preferably, the first hole 36 may have a minimum diameter of 4 μm. The interlayer insulating layer 30 may include a dielectric such as a silicon oxide film or a silicon nitride film. In addition, the interlayer insulating layer 30 may comprise a polymer. The interlayer insulating layer 30 may include a first interlayer insulating layer 32 and a second interlayer insulating layer 34. The first interlayer insulating layer 32 may cover the first wires 20. The second interlayer insulating layer 34 may cover the second wires 40. The first interlayer insulating layer 32 and the second interlayer insulating layer 34 may comprise the same dielectric.

The second wires 40 may extend in the second direction. The second wires 40 may include gold, silver, copper, aluminum, tungsten, nickel (Ni), chromium, or tantalum. The second wirings 40 may include a ring electrode 42 formed around the first hole 36. The first hole 36 may be smaller than the inner diameter of the ring electrode 42. The ring electrode 42 may be disposed in the interlayer insulating layer 30. That is, the ring electrode 42 may not be exposed in the first hole 36.

The ring electrode 42 and the first hole 36 may be arranged in a matrix shape along the first wires 20 and the second wires 40. Each time the first wires 20 and the second wires 40 intersect, the ring electrode 42 and the first hole 36 may be disposed. The first wires 20 and the second wires 40 may define the pixels 60. That is, one ring electrode 42 and the first hole 36 may correspond to one pixel 60. The second wires 40 may be connected to the second pad 48. The second pad 48 may be a scan driver or a gate driver.

The wedge electrode 50 may be disposed in the first hole 36. The wedge electrode 50 may include a metal such as molybdenum (Mo). The bottom plates 22 of the first wires 20 may be electrically connected to the wedge electrode 50. The wedge electrode 50 may be disposed at the center of the first hole 36. The distance between the wedge electrode 50 and the ring electrode 42 may be about 1 to 10 μm.

FIG. 3 is a view showing the ink 70 between the wedge electrode 50 and the ring electrode 42 of FIG. 2.

1 to 3, the ink 70 may have surface tension F _st and electromagnetic force F _E at the ends of the wedge electrode 50. The surface tension F _st of the ink 70 is a force to prevent separation from the wedge electrode 50, that is, a force adhered to the wedge electrode 50.

The electromagnetic force F _E is a force to separate the ink 70 charged with positive charge from the wedge electrode 50. The electric field Ez can be defined by the voltage V and the distance D. The voltage V may be calculated as the product of the electric field Ez and the distance D. When a voltage is applied between the first wires 20 and the second wires 40, the ink 70 may be charged. When the surface tension F _st is greater than the electromagnetic force F _E , the ink 70 may be attached to the wedge electrode 50. When the electromagnetic force F _E is greater than the surface tension tension F _st , the ink 70 may be separated from the wedge electrode 50 and passed to the ring electrode 42.

Just before the ink 70 is separated from the wedge electrode 50, the surface tension F _st and the electromagnetic force F _E may have an equilibrium state. The surface tension F _st of the ink 70 may be calculated by Equation 1 as πdν _st cosθ.

Here, d is about 100 nm in diameter of the ink 70 immediately before being separated from the wedge electrode 50. ν _st may be a value of about 26.56 (mN / m) as a constant of surface tension (F _st ). θ is an angle formed between the tangent of the ink 70 and the electric field direction axis, and is about 65 °. The surface tension F _st is calculated to be about 3.5 nN.

In addition, the electromagnetic force (F _E ) may be represented by Equation 2 as a coulomb force.

Where ε ₀ is the permittivity of air. ε _r is the dielectric constant of the ink, which is assumed to be 1/2 of the dielectric constant of the ink and air. E is a value obtained by dividing the voltage V between the wedge electrode 50 and the ring electrode 42 by the distance D. The voltage V is 200V, and the distance D is about 4 mu m. The cross-sectional area of the ink may correspond to the area of a circle having a 100 nm diameter. The electromagnetic force is calculated to be about 3.5nN. Equilibrium electromagnetic force F _E and surface tension F _st have the same value.

When the electromagnetic force F _E is greater than the surface tension F _st , the ink 70 may be separated from the wedge electrode 50 and printed at a nano-scale. Here, the ink 70 may be divided into remaining ink 72 and printed ink 74. The remaining ink 72 may be separated from the remaining ink 72 by the electrostatic force on the wedge electrode 50.

The electromagnetic force F _E may be proportional to the voltage between the first wires 20 and the second wires 40. The pixels 60 may print the ink 70 active. Therefore, the nano printing apparatus according to the embodiment of the present invention can realize a large area printing.

4 to 10 are process perspective views showing a method of manufacturing a nano printing apparatus according to an embodiment of the present invention based on FIG.

Referring to FIG. 4, first wirings 20 are formed on the substrate 10. The first wirings 20 may be formed by a metal deposition process, a photolithography process, and an etching process. The metal deposition process may include thermal deposition, sputtering or chemical vapor deposition.

Referring to FIG. 5, a first interlayer insulating layer 32 is formed on the first wires 20 and the substrate 10. The first interlayer insulating layer 32 may include a silicon oxide film formed by a chemical vapor deposition method.

Referring to FIG. 6, second wirings 40 are formed on the first interlayer insulating layer 32. The second interconnections 40 may be formed by a metal deposition process, a photolithography process, and an etching process. The second wires 40 may include a ring electrode 42 formed whenever the first wires 20 intersect with the first wires 20. The ring electrode 42 may overlap the bottom plates 22.

Referring to FIG. 7, a second interlayer insulating layer 34 is formed on the second wirings 40 and the first interlayer insulating layer 32. The second interlayer insulating layer 34 may include a silicon oxide film formed by a chemical vapor deposition method.

Referring to FIG. 8, a sacrificial layer 80 is formed on the second interlayer insulating layer 34. The sacrificial layer 80 may include a thermal oxide film formed by a rapid thermal process (RTP) or a silicon nitride film formed by a chemical vapor deposition method. Here, the sacrificial layer 80 and the interlayer insulating layer 30 may be made of different materials.

Referring to FIG. 9, a portion of the interlayer insulating layer 30 in the ring electrode 42 is removed to form the first hole 36. The first hole 36 may be formed by a photolithography process and an etching process. The etching process of the first hole 36 may include a wet etching process. The ring electrode 42 may surround the first hole 36. The first hole 36 may expose the bottom plate 22 of the first wiring 20 to the outside. The ring electrode 42 may have a larger diameter than the first hole 36. The ring electrode 42 may surround the first hole 36. The second interlayer insulating layer 34 may be coated inside the ring electrode 42.

Referring to FIG. 10, the wedge electrode 50 on the bottom plate 22 in the first hole 36 and the metal layer 54 on the sacrificial layer 80 are formed, respectively. The wedge electrode 50 and the metal layer 54 may be formed by the inclined plane rotation deposition method of the metal. The inclined plane rotation deposition method is a method of forming the wedge electrode 50 and the metal layer 54 by inclining the substrate 10 from a metal source (not shown) of the sacrificial layer 80. The area of the bottom surface of the wedge electrode 50 may be determined according to the inclination angle of the metal source and the substrate 10. The height of the wedge electrode 50 may be increased in proportion to the thickness of the metal layer 54. The metal layer 54 may have a second hole 56 smaller than the first hole 36. The second hole 56 may have a diameter of a length inversely proportional to the thickness of the metal layer 54. As the thickness of the metal layer 54 is increased, the diameter of the second hole 56 can be reduced. The reason that the diameter of the second hole 56 is reduced is due to the overhang of the metal layer 54.

Referring to FIG. 2, the sacrificial layer 80 is removed to lift off the metal layer 54. The sacrificial layer 80 may be wet removed by an acidic solution. Metal layer 54 may be removed simultaneously with sacrificial layer 80. The first hole 36 may be opened again. The wedge electrode 50 may remain in the center portion of the first hole 36.

11 to 13 are views for explaining the printing method using the nano-printing apparatus of the present invention.

2 and 11, the ink 70 is coated on the wedge electrode 50 and the second wiring 40. The ink 70 may be applied by a dipping, roll printing method or spray method. Although not shown, the ink 70 may be applied on the interlayer insulating layer 30. Thereafter, the ink 70 may be heated to partially dry it.

2 and 12, the ink 70 on the second wiring 40 is selectively removed. The ink 70 may remain on and around the wedge electrode 50 in the first hole 36. The ink 70 on the second wiring 40 can be removed by the cleaning roll 90. The cleaning roll 90 may remove the ink 70 on the interlayer insulating layer 30. Ink 70 may be cleaned. It can be driven in clincher form.

Referring to FIG. 13, the ink 70 may be separated from the wedge electrode 50 by electromagnetic force by applying a voltage between the first wiring 20 and the second wiring 40. The ink 70 may be printed on the target substrate 92. The target substrate 92 may be charged with a charge opposite to the wedge electrode 50. For example, the target substrate 92 may be negatively charged. Voltages provided to the first wiring 20 and the second wiring 40 may be continuously applied for a predetermined time.

The ink 70 may be separated from the wedge electrodes 50 connected to any one of the first wire 20 and the second wire 40. In addition, the voltage may be provided in the form of a pulse. The ink 70 may be alternating or dropping in the wedge electrodes 50 depending on the voltage in the form of a pulse.

Although not shown, the ink 70 may be stacked perpendicular to the target substrate 92. In addition, the ink 70 may be formed into a printing element by natural drying or thermal drying. The printing element may be formed on the target substrate 92 in a 3D structure or a large area.

14 is a perspective view showing a nano printing apparatus according to an application example of the present invention.

Referring to FIG. 14, the nanoprinting apparatus according to the application example of the present invention may include a tip 52 connected to the end of the wedge electrode 50. The tip 52 may adjust the distance between the wedge electrode 50 and the ring electrode 42. The tip 52 may include carbon nanotubes (CNT). An application example is the tip 52 placed on the wedge electrode 50 of the embodiment. The tip 52 can be easily used to adjust the distance between the wedge electrode 50 and the ring electrode 42.

Although the embodiments of the present invention have been described above with reference to the accompanying drawings, those skilled in the art to which the present invention belongs may be embodied in other specific forms without changing the technical spirit or essential features of the present invention. You will understand that. Therefore, it should be understood that the embodiments described above are exemplary in all respects and not restrictive.

10: substrate 20: first wirings
22: bottom plate 24: first pad
30: interlayer insulation layer 32: first interlayer insulation layer
34: second interlayer insulating layer 36: first hole
40: second wirings 42: ring electrode
48: second pad 50: wedge electrode
52: tip 54: metal layer
56: second hole 60: pixels
70: ink 80: sacrificial layer
90: cleaning roll 92: target substrate

Claims

Board;
First wirings extending in a first direction on the substrate;
An interlayer insulating layer disposed on the first wires and having holes partially exposing the first wires;
Second wirings disposed in the interlayer insulating layer adjacent to the holes and extending in a second direction crossing the first wirings; And
Wedge electrodes connected to the first wires and protruding from the centers of the holes are formed at portions crossing the second wires.
The wedge electrodes have a conical shape,
Further comprising a tip disposed at the ends of the cone-shaped wedge electrodes,
The tip is a nano-printing device comprising a carbon nanotube.

delete

The method of claim 1,
The wedge electrode nano-printing apparatus comprising molybdenum.

The method of claim 1,
The second wirings have an inner diameter and an outer diameter with respect to the holes, and include a ring electrode surrounding the holes.

The method of claim 6,
And the ring electrode has the inner diameter larger than the holes.

The method of claim 7, wherein
And the first wires overlapping the ring electrode, and including a bottom plate disposed under the wedge electrode and exposed from the holes.

The method of claim 7, wherein
And the holes have a minimum diameter of 4 micrometers.

The method of claim 1,
And the holes and the wedge electrodes are arranged in a matrix by the first wires and the second wires.

The method of claim 1,
A data driver connected to the first wires; And
And a scan driver connected to the second wires.

The method of claim 1,
And the first wiring and the second wiring include at least one of gold, silver, copper, aluminum, tungsten, tantalum, titanium, and nickel.

The method of claim 1,
The interlayer insulating layer,
A first interlayer insulating layer covering the first wirings; And
And a second interlayer insulating layer covering the first interlayer insulating layer and the second wires.

The method of claim 13,
And the first interlayer insulating layer and the second interlayer insulating layer include a silicon oxide film or a silicon nitride film.

Forming first wirings extending in a first direction on the substrate;
Forming a first interlayer insulating layer on the first wirings;
Forming second wirings on the first interlayer insulating layer, the second wirings having a ring electrode extending in a second direction crossing the first direction and overlapping the first wirings;
Forming a second interlayer insulating layer on the second wiring and the first interlayer insulating layer;
Selectively forming a sacrificial layer on the second interlayer dielectric layer and the second interconnections;
Removing a second interlayer insulating layer in the ring electrode and a first interlayer insulating layer under the second interlayer insulating layer to form holes partially exposing the first wires; And
Forming wedge electrodes on the first wires in the holes,
Forming the wedge electrodes is:
Forming a metal layer on the sacrificial layer; And
Removing the sacrificial layer to lift off the metal layer on the sacrificial layer.

delete

The method of claim 15,
The metal layer and the wedge electrode, the manufacturing method of the nano-printing apparatus formed by a gradient deposition method.

The method of claim 15,
The hole is a manufacturing method of the nano-printing device having a diameter smaller than the ring electrode.