KR102007834B1 - method of manufacturing Flexible display device - Google Patents

method of manufacturing Flexible display device Download PDF

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KR102007834B1
KR102007834B1 KR1020130074741A KR20130074741A KR102007834B1 KR 102007834 B1 KR102007834 B1 KR 102007834B1 KR 1020130074741 A KR1020130074741 A KR 1020130074741A KR 20130074741 A KR20130074741 A KR 20130074741A KR 102007834 B1 KR102007834 B1 KR 102007834B1
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method
layer
hydrogen
sacrificial layer
flexible substrate
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KR1020130074741A
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Korean (ko)
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KR20150002959A (en
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양희정
한규원
호원준
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엘지디스플레이 주식회사
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259Multistep manufacturing methods
    • H01L27/1262Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
    • H01L27/1266Multistep manufacturing methods with a particular formation, treatment or coating of the substrate the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
    • GPHYSICS
    • G02OPTICS
    • G02FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/133305Flexible substrates, e.g. plastics, organic film
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/0001Processes specially adapted for the manufacture or treatment of devices or of parts thereof
    • H01L51/003Processes specially adapted for the manufacture or treatment of devices or of parts thereof using a temporary substrate
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/0096Substrates
    • H01L51/0097Substrates flexible substrates
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2227/00Indexing scheme for devices consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate covered by group H01L27/00
    • H01L2227/32Devices including an organic light emitting device [OLED], e.g. OLED display
    • H01L2227/326Use of temporary substrate, e.g. for manufacturing of OLED dsiplays having an inorganic driving circuit
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2251/00Indexing scheme relating to organic semiconductor devices covered by group H01L51/00
    • H01L2251/50Organic light emitting devices
    • H01L2251/53Structure
    • H01L2251/5338Flexible OLED

Abstract

The present invention includes the steps of forming a sacrificial layer made of a metal oxide or a metal nitride on the base substrate; Forming a flexible substrate on the sacrificial layer; Forming a thin film transistor on the flexible substrate; Reducing the sacrificial layer to a metal layer by heat treatment or laser beam irradiation; A method of manufacturing a flexible display device, the method comprising: separating the flexible substrate from the metal layer and the base substrate.

Description

Method of manufacturing flexible display device

The present invention relates to a method of manufacturing a flexible display device, and more particularly, to a method of manufacturing a flexible display device capable of preventing defects of a flexible substrate when separating the flexible substrate from a carrier substrate.

As the information society develops, the demand for display devices for displaying images is increasing in various forms. Recently, liquid crystal display (LCD), plasma display panel (PDP), and organic light emitting diodes Various flat panel displays (FPDs), such as organic light emitting diodes (OLEDs), are being utilized.

Recently, a flexible display device for forming an array element such as a thin film transistor on a flexible substrate having a flexible flexibility such as plastic has been in the spotlight.

Such flexible substrates are difficult to be applied to conventional display equipment designed for glass or quartz substrates due to their good bending characteristics, for example, transfer or cassettes by track equipment or robots. There is a restriction that can not be stored in the furnace.

A method for solving this will be described with reference to the drawings.

1 is a cross-sectional view showing a conventional flexible substrate.

As shown in FIG. 1, the silicon layer 20 is formed on the base substrate 10, and the flexible substrate 30 is formed on the silicon layer 20.

In this case, the base substrate 10 is made of glass or quartz, and the silicon layer 20 is made of amorphous silicon.

The flexible substrate 30 is made of polyimide, and although not shown, an element such as a thin film transistor is formed on the flexible substrate 30.

When the flexible substrate 30 is formed as described above, image display such as a thin film transistor and a pixel electrode is applied to the flexible substrate 30 by using the manufacturing equipment for the display device that has been used due to the lower base substrate 10. It is possible to form a device for.

Thereafter, the base substrate 10 and the flexible substrate 30 are separated, and the silicon layer 20 is irradiated with a laser beam on the silicon layer 20 formed between the base substrate 10 and the flexible substrate 30. Hydrogen is released from 20 to separate the silicon layer 20 and the flexible substrate 30.

At this time, a part of the silicon layer 20 may remain on the flexible substrate 30 without being completely separated.

Hereinafter, a part of the silicon layer 20 remaining on the flexible substrate 30 after separation will be described with reference to FIG. 2.

2 is a cross-sectional view of the flexible substrate separated from the base substrate.

As shown in FIG. 2, after the separation, the silicon residual film 23 which is a part of the silicon layer remains on the lower portion of the flexible substrate 30 without being removed.

The remaining of the silicon residual film 23 is caused because the light absorption rate of the silicon layer with respect to the laser beam is partially dropped.

That is, some silicon layers having relatively low light absorption do not sufficiently absorb the laser beam, so that hydrogen is not sufficiently released from such silicon layers, and as a result, some silicon layers remain on the flexible substrate.

The silicon residual film 23 may affect a thin film transistor (not shown) formed on the flexible substrate 30.

For example, the silicon residual film 23 may act as a floating gate, causing electrical interference to the thin film transistor formed on the flexible substrate 30, thereby causing a malfunction.

As such, when the silicon residual film 23 remains on the back surface of the flexible substrate 30, defects caused by the silicon residual film 23 may be caused, thereby lowering reliability.

The present invention has been presented to solve the above problems,

It is an object of the present invention to provide a flexible display device having no residual film on the back surface of the flexible substrate and a method of manufacturing the same.

In order to solve the above problems, the present invention comprises the steps of forming a sacrificial layer made of a metal oxide or metal nitride on the base substrate; Forming a flexible substrate on the sacrificial layer; Forming a thin film transistor on the flexible substrate; Reducing the sacrificial layer to a metal layer by heat treatment or laser beam irradiation; A method of manufacturing a flexible display device, the method comprising: separating the flexible substrate from the metal layer and the base substrate.

At this time, the heat treatment or laser beam irradiation, including the progress in a hydrogen atmosphere.

The method may further include forming a hydrogen supply layer containing hydrogen in at least one of the upper and lower portions of the sacrificial layer.

At this time, the hydrogen supply layer is made of a silicon (Si) series thin film containing hydrogen, an oxide film or a nitride film.

The forming of the hydrogen supply layer may include depositing the hydrogen supply layer by supplying hydrogen gas to one of the reaction gases.

The forming of the hydrogen supply layer may include depositing the hydrogen supply layer; And performing a hydrogen plasma treatment on the hydrogen supply layer.

The sacrificial layer may include copper (Cu), zirconium (Zr), aluminum (Al), zinc (ZN), chromium (Cr), titanium (Ti), hafnium (Hf), vanadium (V), and tantalum ( Metal oxides including one of Ta), molybdenum (Mo), tungsten (W), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), magnesium (Mg) and calcium (Ca) It consists of water or metal nitrides.

The method may further include forming an organic light emitting diode or a liquid crystal capacitor connected to the thin film transistor.

According to the present invention, the sacrificial layer is formed between the base substrate and the flexible substrate, so that the base substrate and the flexible substrate can be separated without remaining material on the back surface of the flexible substrate.

1 is a cross-sectional view showing a conventional flexible substrate.
2 is a cross-sectional view of the flexible substrate separated from the base substrate.
3A to 3D are cross-sectional views schematically illustrating a method of manufacturing a flexible display device according to a first embodiment of the present invention.
4A is a view showing reducing a copper oxide film.
4B is a cross-sectional view showing the separation of a copper film reduced with copper from a copper oxide film.
5 is a cross-sectional view schematically illustrating a method of manufacturing a flexible display device according to a second embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.

3A to 3D are cross-sectional views schematically illustrating a method of manufacturing a flexible display device according to a first embodiment of the present invention.

As shown in FIG. 3A, the sacrificial layer 250 is formed on the base substrate 100.

In this case, the base substrate 100 may be made of glass or quartz, and the sacrificial layer 250 may be, for example, copper (Cu), zirconium (Zr), aluminum (Al), zinc (ZN), chromium (Cr), Titanium (Ti), Hafnium (Hf), Vanadium (V), Tantalum (Ta), Maldibdenum (Mo), Tungsten (W), Manganese (Mn), Iron (Fe), Cobalt (Co), Nickel (Ni ), And may be formed of a metal oxide or a metal nitride including one of magnesium (Mg) and calcium (Ca).

Here, copper (Cu), zirconium (Zr), aluminum (Al), zinc (ZN), chromium (Cr), titanium (Ti), hafnium (Hf), vanadium (V), tantalum (Ta), and molybdenum Metal oxides combined with one of (Mo), tungsten (W), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), magnesium (Mg) and calcium (Ca) are amorphous silicon (Si). When the laser beam is irradiated with better light absorption rate than), it absorbs more light sources than silicon, so reduction is easily performed.

In addition, copper (Cu), zirconium (Zr), aluminum (Al), zinc (ZN), chromium (Cr), titanium (Ti), hafnium (Hf), vanadium (V), tantalum (Ta), and molybdenum Metal nitrides combined with (Mo), tungsten (W), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), magnesium (Mg) and calcium (Ca) absorb heat. Denitrification occurs to release nitrogen.

The metal oxide and the metal nitride may be formed in a multilayer layer in which two or more layers are stacked.

3B, the flexible substrate 300 is formed on the sacrificial layer 250.

In this case, the flexible substrate 300 may be, for example, polyethersulphone (PES), polycarbonate (PC), polyimide (PI), polyethylene terephthalate (PET), polyethylene naphthalate ( Polyethylenenaphthalate (PEN), polyacrylate (polyacrylate, PAR) and fiber reinforced plastic (FRP) may include a material selected from the group consisting of.

3C, a thin film transistor T is formed on the flexible substrate 300 formed on the base substrate 100.

In this case, the thin film transistor T may include a gate electrode 310, a gate insulating layer 320, a semiconductor layer 330, a source electrode 340, a drain electrode 350, and a protective layer 360.

Although not shown, a gate wiring and a data wiring connected to the thin film transistor T and a pixel electrode connected to the drain electrode 350 of the thin film transistor T may be formed on the flexible substrate 300. The light emitting diode or the liquid crystal capacitor may be connected to the pixel electrode.

In addition, referring to FIG. 3D, after the sacrificial layer 250 is heat-treated or irradiated with a laser beam to the sacrificial layer 250 in a hydrogen (H 2 ) atmosphere, the base substrate 100 and the metal layer on the base substrate 100 are disposed. The flexible substrate 300 is separated from the 250.

Here, an example in which the sacrificial layer 250 is formed of copper oxide (CU 20 ) will be described.

Copper oxide (Cu 2 O) constituting the sacrificial layer 250 using energy by heat treatment or laser beam irradiation is combined with hydrogen in a hydrogen atmosphere to be reduced and converted to copper (Cu) and water (H 2 O).

Figure 112013057875684-pat00001

Since copper (Cu) is weaker in adhesion to the flexible substrate 300 than copper oxide (Cu 2 O), the sacrificial layer 250 is reduced to the metal layer 260 by receiving energy by heat treatment or laser beam irradiation. The flexible substrate 300 is easily separated from the metal layer 260, and the residual sacrificial layer 250 does not remain on the rear surface of the flexible substrate 300.

Meanwhile, since the sacrificial layer 250 is reduced to the metal layer 260 by heat treatment or laser beam irradiation in a hydrogen atmosphere, the metal layer 260 can be easily removed from the base substrate 100 by etching. The base substrate 100 may be recycled by removing the metal layer 260 without damaging the 100.

As such, when the sacrificial layer 250 is irradiated with heat treatment or a laser beam in the hydrogen atmosphere, the sacrificial layer 250 reacts with hydrogen and is reduced to the metal layer 260. Therefore, the flexible substrate 300 can be easily separated from the base substrate 100, and the base substrate 100 can be recycled without damage, leaving no residue on the flexible substrate 300.

4A and 4B are cross-sectional runner electron microscope (SEM) photographs for explaining that the sacrificial layer is separated by reacting with hydrogen.

FIG. 4A is a cross-sectional view showing that the sacrificial layer is reduced to a metal layer by reacting with hydrogen, and the sacrificial layer is formed of a copper oxide film Cu x O y .

Referring to FIG. 4A, after a silicon nitride film SiN x including hydrogen is formed on the sacrificial layer Cu x O y , the copper oxide film Cu x O y may be heat treated or a laser beam may be applied. When irradiated, hydrogen in the silicon nitride film SiN x is ejected and diffused into the copper oxide film Cu x O y . The hydrogen diffusion is reduced by combining with the oxygen of the copper oxide film (Cu x O y) into the copper film (Cu) the upper part of the copper oxide film (Cu x O y).

In this case, the silicon nitride film (SiN x ) may be, for example, a silicon-based thin film containing hydrogen, an oxide film or a nitride film, and the copper oxide film Cu x O y may be, for example, copper (Cu), Zirconium (Zr), Aluminum (Al), Zinc (ZN), Chromium (Cr), Titanium (Ti), Hafnium (Hf), Vanadium (V), Tantalum (Ta), Maldibdenum (Mo), Tungsten (W) ), Metal oxides or metal nitrides including one of manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), magnesium (Mg) and calcium (Ca).

Since copper has a weaker adhesive force than copper oxide, the reduced copper film Cu is easily separated.

4B is a cross-sectional view after separating the reduced copper film from the copper oxide film Cu x O y .

Referring to Figure 4b, separated without leaving any residue from the copper oxide film (Cu x O y) silicon nitride in Figure 4a of (SiN x) a copper film is a copper film (Cu x O x) redox reacted with hydrogen in the do.

At this time, if the copper oxide film Cu x O y is controlled to be reduced by controlling the degree of reaction with hydrogen, the copper film may be separated without the residue of the copper oxide film Cu x O y .

The metal film reduced by reacting with hydrogen is separated without leaving a residue.

At this time, as shown in FIGS. 4A and 4B, when a hydrogen supply layer containing a metal oxide layer and hydrogen is formed between the flexible substrate and the base substrate, hydrogen and the metal oxide layer of the hydrogen supply layer are bonded, so that heat treatment or laser beam irradiation is performed in a hydrogen atmosphere. Instead, the flexible substrate 300 may be separated from the base substrate 100 by proceeding in a general atmospheric atmosphere.

Hereinafter, referring to FIG. 5, a hydrogen supply layer is formed to separate the flexible substrate from the metal oxide layer in an air atmosphere.

5 is a cross-sectional view schematically illustrating a method of manufacturing a flexible display device according to a second embodiment of the present invention.

As shown in FIG. 5, a hydrogen supply layer 240 containing hydrogen is formed on the base substrate 100, and a sacrificial layer (not shown) is formed on the hydrogen supply layer 240.

In this case, the flexible substrate 300 is formed on the sacrificial layer (not shown), and the thin film transistor T is formed on the flexible substrate 300.

In this case, the thin film transistor T may include a gate electrode 310, a gate insulating layer 320, a semiconductor layer 330, a source electrode 340, a drain electrode 350, and a protective layer 360.

Although not shown, a gate wiring and a data wiring connected to the thin film transistor T and a pixel electrode connected to the drain electrode 350 of the thin film transistor T may be formed on the flexible substrate 300. The pixel electrode may be connected to a light emitting diode or a liquid crystal capacitor.

On the other hand, the flexible substrate 300 heat-treats the sacrificial layer (not shown) or irradiates a laser beam to the sacrificial layer (not shown), and then, from the base substrate 100 and the metal layer 260 on the base substrate 100. The flexible substrate 300 is separated.

At this time, when the laser beam is irradiated or heat treated, hydrogen of the hydrogen supply layer 240 is ejected and diffused into the sacrificial layer (not shown).

For example, a metal oxide or a metal nitride forming a sacrificial layer (not shown) is combined with hydrogen of the hydrogen supply layer 240 to be reduced, and converted into a metal layer 260 and water (H 2 O).

The metal layer 260 has a weaker adhesive force than the sacrificial layer made of metal oxide or metal nitride.

Therefore, when the sacrificial layer is subjected to energy by heat treatment or laser beam irradiation and reduced to the metal layer 260, the flexible substrate 300 is easily separated from the reduced metal layer 260, and thus is disposed on the rear surface of the flexible substrate 300. There is no remaining sacrificial layer.

When the hydrogen supply layer 240 containing hydrogen is formed as described above, the flexible substrate 300 and the base substrate 100 may be separated by performing heat treatment or a laser beam irradiation in an air atmosphere.

On the other hand, the metal layer 260 can be easily removed from the base substrate 100, and thus the base substrate 100 can be recycled by removing the metal layer 260 without damaging the base substrate 100.

In addition, although the hydrogen supply layer 240 is formed under the sacrificial layer 250 in FIG. 5, the hydrogen supply layer 240 may be formed on both the upper or upper and lower portions of the sacrificial layer 250.

The hydrogen supply layer 240 may be formed of a silicon (Si) based thin film containing hydrogen, an oxide film, and a nitride film. In addition, the silicon (Si) -based thin film, the oxide film and the nitride film may each control the content of hydrogen according to the method of forming.

For example, by using a device such as CVD, hydrogen gas may be supplied to one of the reaction gases during deposition of the hydrogen supply layer 240 to adjust the content of hydrogen.

In addition, after the hydrogen supply layer 240 is formed, the hydrogen content of the hydrogen supply layer 240 may be adjusted by hydrogen plasma treatment.

At this time, if the hydrogen content of the hydrogen supply layer 240 is adjusted to reduce all of the sacrificial layer to the metal layer 260, the sacrifice due to the hydrogen of the hydrogen supply layer 240 when the heat treatment or laser beam irradiation to the sacrificial layer The layers are all reduced to the metal layer 260.

Although described above with reference to a preferred embodiment of the present invention, those skilled in the art various modifications and changes to the present invention without departing from the spirit and scope of the invention described in the claims below I can understand that you can.

100: base substrate 240: hydrogen supply layer
250: sacrificial layer 300: flexible substrate
310: gate electrode 320: gate insulating film
330 semiconductor layer 340 source electrode
350: drain electrode 360: protective layer
T: thin film transistor

Claims (8)

  1. Forming a sacrificial layer made of a metal oxide or a metal nitride on the base substrate;
    Forming a flexible substrate on the sacrificial layer;
    Forming a thin film transistor on the flexible substrate;
    Supplying hydrogen (H 2 ) to the sacrificial layer, and reducing the sacrificial layer to a metal layer by heat treatment or laser beam irradiation;
    Separating the flexible substrate from the metal layer and the base substrate
    Method of manufacturing a flexible display device comprising a.
  2. The method of claim 1,
    The heat treatment or laser beam irradiation, the manufacturing method of a flexible display device comprising a hydrogen atmosphere.
  3. The method of claim 1,
    And forming a hydrogen supply layer containing hydrogen on at least one of the upper and lower portions of the sacrificial layer.
  4. The method of claim 3, wherein
    The hydrogen supply layer is a silicon (Si) series thin film containing hydrogen, an oxide film or a nitride film manufacturing method of a flexible display device.
  5. The method of claim 3, wherein
    The forming of the hydrogen supply layer may include supplying hydrogen gas to one of the reaction gases and depositing the hydrogen supply layer.
  6. The method of claim 5,
    And processing a hydrogen plasma on the hydrogen supply layer.
  7. The method of claim 1,
    The sacrificial layer is copper (Cu), zirconium (Zr), aluminum (Al), zinc (ZN), chromium (Cr), titanium (Ti), hafnium (Hf), vanadium (V), tantalum (Ta) , Metal oxides including one of molybdenum (Mo), tungsten (W), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), magnesium (Mg), calcium (Ca) or A method of manufacturing a flexible display device consisting of metal nitrides.
  8. The method of claim 1,
    And forming an organic light emitting diode or a liquid crystal capacitor connected to the thin film transistor.

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KR20160150236A (en) * 2015-06-19 2016-12-29 삼성디스플레이 주식회사 Organic luminescence emitting display device and the method of manufacturing the same
KR20170051595A (en) 2015-10-29 2017-05-12 삼성디스플레이 주식회사 Flexible display device and method for manufacturing the same
CN106711348A (en) * 2016-12-29 2017-05-24 上海天马微电子有限公司 Organic light-emitting display panel, preparation method thereof and display device

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KR100481994B1 (en) * 1996-08-27 2005-12-01 세이코 엡슨 가부시키가이샤 Method for transferring a separation method, a thin film device, and the thin film device, a thin film integrated circuit device produced by using it, and a liquid crystal display device

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KR101443580B1 (en) * 2007-05-11 2014-10-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device

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Publication number Priority date Publication date Assignee Title
KR100481994B1 (en) * 1996-08-27 2005-12-01 세이코 엡슨 가부시키가이샤 Method for transferring a separation method, a thin film device, and the thin film device, a thin film integrated circuit device produced by using it, and a liquid crystal display device

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