KR101967224B1 - Thinner composition for cleaning photoresist - Google Patents

Abstract

The present invention relates to a thinner composition for cleaning a photoresist and, more specifically, to a thinner composition for cleaning a photoresist which has more excellent cleaning power than typically commercialized thinner for display, is produced by using a thinner waste liquid for a semiconductor, adds a specific compound to remove impurities from the thinner waste liquid for the semiconductor or does not use a specific device other than a distillation device, and can improve economics by directly using a final product as the thinner for display without adding specific components.

Description

Thinner composition for cleaning photoresist < RTI ID = 0.0 >

The present invention relates to a thinner composition for photoresist cleaning, more particularly to a thinner for display which is superior in cleaning ability to a thinner thinner for display, which is typically used, and which is manufactured using a thinner for semiconductors, The present invention relates to a thinner for photoresist cleaning which can improve the economical efficiency by using a final product as a thinner for display without adding a specific compound or adding a compound or using a specific device other than distillation.

The thinner for photoresist cleaning is used in a rinse process for cleaning the remaining photoresist after the exposure and etching process in the semiconductor or display manufacturing process, In the rinsing process of the display manufacturing process, a thinner consisting of 70% by weight of 1-methoxy-2-propanol acetate and 30% by weight of 1-methoxy-2-propanol is typically used. There is a problem that the environment is polluted when the waste liquid of the thinner used in the rinsing process is discarded and the thinner component contained in the thinner waste liquid is recovered and recycled by a method using distillation or the like as in the following Patent Document .

(Patent Literature)

Japanese Patent Application Laid-Open No. 10-2016-0012721 (published on Mar. 02, 03, 2016) "Method for purifying thinner waste solution for photoresist rinsing"

However, in the conventional method of refining the thinner waste liquid, there is a problem that in order to remove the impurities contained in the thinner waste liquid, a compound such as an alkali compound, benzoyl chloride or the like is additionally added or the impurities are removed separately using a separator in addition to the distillation process . In addition, the conventional thinner waste solution refining method can not be used directly as a thinner, and there is a problem that a specific component must be further mixed.

SUMMARY OF THE INVENTION The present invention has been made to solve the above problems,

It is an object of the present invention to provide a thinner for photoresist cleaning which is typically superior to a commercially available thinner for display.

The present invention also relates to a method for producing a semiconductor thinner waste liquid which is produced by using a thinner for semiconductors and which is capable of directly displaying the final resultant without addition of a specific component without adding a specific compound for removing impurities from the semiconductor thinner waste liquid, The present invention provides a thinner composition for cleaning a photoresist which can be used as a thinner for a photoresist and can improve the economical efficiency.

In order to achieve the above object, the present invention is implemented by the following embodiments.

According to one embodiment of the present invention, the thinner composition for photoresist cleaning according to the present invention is characterized by comprising 1-methoxy-2-propanol acetate, 2-hydroxyisobutyric acid methyl ester and ethyl lactate do.

According to another embodiment of the present invention, the thinner composition for photoresist cleaning according to the present invention comprises 65 to 75 parts by weight of 1-methoxy-2-propanol acetate, 8 to 10 parts by weight of 2-hydroxyisobutyric acid methyl ester And 16 to 20 parts by weight of ethyl lactate.

According to another embodiment of the present invention, the thinner composition for photoresist cleaning according to the present invention comprises 50 to 60 parts by weight of 1-methoxy-2-propanol acetate, 23 to 30 parts by weight of 2-hydroxyisobutyric acid methyl ester And 12 to 16 parts by weight of ethyl lactate.

According to still another embodiment of the present invention, the thinner composition for cleaning a photoresist according to the present invention is characterized in that it is derived from a waste liquid of a thinner used in a rinsing process for cleaning a photoresist during a semiconductor manufacturing process.

According to another embodiment of the present invention, the thinner composition for cleaning a photoresist according to the present invention is used in a rinsing process for cleaning a photoresist during a display manufacturing process.

According to another embodiment of the present invention, a thinner for photoresist cleaning according to the present invention is a thinner for removing a thinner having a higher boiling point impurity than a thinner compound by distilling a thinner waste solution into a reactor, ; A high boiling point material removing step of removing high boiling point impurities remaining in the reactor after the recovering step; Removing the low boiling point material by distilling the low boiling point impurity having a lower boiling point than the compound for thinner by distilling the distillate into a reactor; And recovering the residue remaining in the reactor after the step of removing the low boiling point material to obtain a thinner composition.

According to another embodiment of the present invention, in the thinner for photoresist cleaning according to the present invention, a thinner waste liquid in which an azeotropic mixture is formed is used as the thinner waste solution in the recovery step, and the high boiling point impurity has a higher boiling point Wherein the low boiling point impurity is at least one of a compound having a lower boiling point than the compound for the thinner and an azeotropic mixture having a lower boiling point than the compound for the thinner, And at least one of them.

According to another embodiment of the present invention, in the thinner composition for photoresist cleaning according to the present invention, the thinner waste solution may contain 1-methoxy-2-propanol acetate, 2-hydroxyisobutyric acid methyl ester, ethyl lactate And an impurity, wherein the step of removing the high boiling point material comprises an expelling step of removing ethyl-3-ethoxypropionate.

According to another embodiment of the present invention, in the thinner for photoresist cleaning according to the present invention, the thinner waste liquid used is a waste liquid of thinner used in a rinsing process for cleaning photoresist during a semiconductor manufacturing process, Is characterized in that it is used in a rinsing process for cleaning a photoresistor during a display manufacturing process.

According to another embodiment of the present invention, in the thinner for photoresist cleaning according to the present invention, the distillate in the recovering step is recovered starting from 135 ° C until recovered to 157 ° C, In the material removing step, the low boiling point impurities are removed from 73 DEG C and removed until the temperature reaches 145 DEG C. The thinner composition for photoresist cleaning is composed of 65 to 75 parts by weight of 1-methoxy-2-propanol acetate, - 8 to 10 parts by weight of hydroxyisobutric acid methyl ester and 16 to 20 parts by weight of ethyl lactate.

According to another embodiment of the present invention, in the thinner for photoresist cleaning according to the present invention, the distillate in the recovering step is recovered from 132 DEG C until recovery reaches 160 DEG C, The low-boiling impurity in the material removing step is removed from 73 DEG C until the temperature is 142 DEG C, and the thinner composition for photoresist cleaning is composed of 50 to 60 parts by weight of 1-methoxy-2-propanol acetate, 23 to 30 parts by weight of hydroxyisobutric acid methyl ester and 12 to 16 parts by weight of ethyl lactate.

According to the present invention, the following effects can be obtained by this embodiment.

The present invention has an effect of excelling in detergency as compared with commercially available thinner for display.

The present invention also relates to a method for producing a semiconductor thinner waste liquid which is produced by using a thinner for semiconductors and which is capable of directly displaying the final resultant without addition of a specific component without adding a specific compound for removing impurities from the semiconductor thinner waste liquid, So that it is possible to improve the economical efficiency.

Fig. 1 is a photograph of a sample coated with a photoresist. Fig.
Figure 2 is a photograph of a specimen treated with a thinner composition according to embodiments of the present invention.

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, a thinner composition for photoresist cleaning according to the present invention and a method of manufacturing the same will be described in detail with reference to the accompanying drawings. Unless defined otherwise, all terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs and, if conflict with the meaning of the terms used herein, It should be understood that throughout the specification, when an element is referred to as " comprising ", it is understood that it does not exclude other elements, it means.

The thinner composition for photoresist cleaning according to an embodiment of the present invention may include 1-methoxy-2-propanol acetate, 2-hydoxyisobutyric acid (2-hydroxyisobutyric acid methyl ester) and ethyl lactate. The photoresist cleaning thinner composition is derived from a waste liquid of a thinner used in a rinsing process for cleaning a photoresist during a semiconductor manufacturing process, and is used in a rinsing process for cleaning a photoresist during a display manufacturing process.

The thinner composition for photoresist cleaning according to another embodiment of the present invention comprises 65 to 75 parts by weight of 1-methoxy-2-propanol acetate, 8 to 10 parts by weight of 2-hydroxyisobutyric acid methyl ester and ethyl lactate 16 to 20 parts by weight.

A thinner composition for photoresist cleaning according to another embodiment of the present invention comprises 50 to 60 parts by weight of 1-methoxy-2-propanol acetate, 23 to 30 parts by weight of 2-hydroxyisobutyric acid methyl ester and ethyl lactate 12 to 16 parts by weight.

A method of manufacturing a thinner composition for cleaning a photoresist according to another embodiment of the present invention includes the steps of forming an azeotropic mixture in a thinner waste liquid and forming a mixture having a higher boiling point than the thinner compound by distilling the thinner waste solution into a reactor A recovery step of distilling and recovering the distillate from which point impurities have been removed; A high boiling point material removing step of removing high boiling point impurities remaining in the reactor after the recovering step; Removing the low boiling point material by distilling the low boiling point impurity having a lower boiling point than the compound for thinner by distilling the distillate into a reactor; And recovering the residue remaining in the reactor after the step of removing the low boiling point material to obtain a thinner composition.

The azeotropic mixture forming step is a step of forming an azeotropic mixture in a thinner waste liquid. The thinner waste liquid is a waste liquid of a thinner used in a rinsing process for cleaning a photoresist during a semiconductor manufacturing process (hereinafter referred to as " ) Is preferably used. The waste liquid of the thinner for semiconductor is mixed with various compounds such as a thinner component, a photoresist component and other impurities, and some compounds may form an azeotropic mixture. When the azeotropic mixture is formed, the boiling point of the azeotropic mixture is different from the boiling point of each compound constituting the azeotropic mixture (for example, water (boiling at 100 DEG C) and N-butyl acetate (127 DEG C The boiling point of the azeotrope is lower or higher than the boiling point of the respective compound constituting the azeotrope. Therefore, the present invention contemplates that the boiling point Step and a step of removing the low boiling point material are performed. The waste liquid of the semiconductor thinner may be 1-methoxy-2-propanol acetate, 2-hydoxyisobutyric acid methyl ester, ethyl lactate ( Ethyl lactate, 1-methoxy-2-propanol, N-butyl acetate, cyclohexanone, gamma-butyrolactone, Propanol, isopropanol, ethyl-3-ethoxypropionate, water, and the like. The final product obtained by simple distillation of the waste liquid of the semiconductor thinner can not be used as a semiconductor thinner (in order to distill the waste liquid of the semiconductor thinner and then use it as a semiconductor thinner, It is necessary to add a specific compound to remove the impurities from the waste solution of the semiconductor thinner or to add the specific component to the final product without using a specific device other than the distillation, (Hereinafter, referred to as a 'thinner for display') used in a rinsing process for cleaning a photoresist during a display manufacturing process, thereby improving the economical efficiency. To this end, a compound which functions to clean the photoresist when it is contained in the thinner for display at a predetermined ratio in the waste liquid of the semiconductor thinner (hereinafter referred to as a 'compound for thinner', and the compound for thinner includes 1-methoxy- 2-propanol acetate, 2-hydroxyisobutyric acid methyl ester and ethyl lactate), a compound which lowers the detergency of the thinner when included in a thinner for display (hereinafter, referred to as' (Hereinafter, referred to as a " neutral compound ", and the neutral compound is 1 (1)), the compound which does not affect the cleansing power of the thinner even when contained in a thinner for display -Methoxy-2-propanol, N-butyl acetate, cyclohexanone, gamma butyrolactone, and isopropanol) The process for producing the present invention has been completed in which the desired compound can be sufficiently removed and the compound for thinner can be obtained in a certain ratio so that the final product has a sufficient cleaning power. Accordingly, a certain amount of the neutral compound (within 6%) can be included in the product, but this does not affect the cleaning ability of the thinner and the process for sufficiently removing the neutral compound is not included in the production method, .

The recovering step is a step of distilling and recovering a distillate from which a high boiling point impurity having a higher boiling point than a compound for a thinner is removed. The impurity means a compound other than the thinner compound among the compounds contained in the thinner waste solution. The thinner waste liquid may be a thinner waste liquid in which an azeotropic mixture is formed, and the reactor may be a conventional various apparatus such as a distiller used for separating a liquid mixture, and the thinner compound may be 1-methoxy-2- Propyl acetate, 2-hydroxyisobutyric acid methyl ester and ethyl lactate, wherein the high boiling point impurity is a compound having a higher boiling point than the compound for the thinner and an azeotropic mixture having a higher boiling point than the compound for the thinner In the recovering step, the distillate is preferably recovered from 135 DEG C until recovery of the distillate reaches 157 DEG C. [ For example, in the recovering step, the thinner waste solution is put in a distiller (not shown) and continuously heated to form a distillate. The temperature of the distillate is set at the upper end of the distiller The valve is opened to recover the distillate to the outside of the reactor. When the temperature exceeds 157 ° C, the valve is closed and the distillate is recovered until the temperature of the distillate becomes 157 ° C.

The high boiling point material removing step may include removing the high boiling point impurities remaining in the reactor after the recovering step, removing an ethyl-3-ethoxypropionate removing step, And other high boiling point impurity removing steps for removing high boiling point impurities other than the phononate. The removal step and other high boiling point impurity removal steps may be carried out separately or simultaneously. Since the high boiling point impurity such as ethyl-3-ethoxypropionate which is not distilled remains in the reactor after the recovery step, the high boiling point impurity is removed in the reactor.

The step of removing the low boiling point material is a step of distilling the low boiling point impurities having a lower boiling point than the compound for thinner by distilling the distillate into a reactor. The low boiling point impurity includes at least one of a compound having a lower boiling point than the compound for the thinner and an azeotropic mixture having a boiling point lower than that of the compound for the thinner, and the removal of the low boiling point impurity starts at 73 ° C Lt; RTI ID = 0.0 > 145 C. < / RTI > For example, in the removal of the low-boiling point material, the distillate (liquid state) recovered in the recovering step is placed in a still (not shown) and continuously heated to form a new distillate (low-boiling impurity in a gaseous state) When the temperature reaches 73 ° C, the valve is opened to remove the new distillate from the reactor. If the temperature exceeds 145 ° C, the valve is closed and the new distillate is removed until the temperature of the new distillate reaches 145 ° C.

The step of recovering is a step of recovering the residue remaining in the reactor after the step of removing the low boiling point material to obtain a thinner composition, and in the obtaining step, the liquid residue remaining in the reactor is recovered, The distillate is collected and recovered (the distillate is recovered starting at 135 deg. C and recovering to 157 deg. C) to obtain the thinner composition. The thinner composition (residue) obtained in the obtaining step contains 97 to 99 wt% of the thinner compound relative to the total weight of the residue, and the thinner composition is used in a rinsing process for cleaning the photoresist during the display manufacturing process , 65 to 75 parts by weight of 1-methoxy-2-propanol acetate, 8 to 10 parts by weight of 2-hydroxyisobutyric acid methyl ester and 16 to 20 parts by weight of ethyl lactate. Recovery is started from the time when the distillate reaches 132 DEG C in the recovery step, and is recovered until the temperature reaches 160 DEG C, and removal is started when the low boiling point impurity becomes 73 DEG C in the low boiling point material removal step, , The thinner composition (residue) obtained in the obtaining step contains 95 to 98% by weight of the thinner compound relative to the total weight of the residue, And the thinner composition is used in a rinsing process for cleaning a photoresist during a display manufacturing process. The thinner composition comprises 50 to 60 parts by weight of 1-methoxy-2-propanol acetate, 23 to 20 parts by weight of 2-hydroxyisobutyric acid methyl ester 30 parts by weight and 12 to 16 parts by weight of ethyl lactate.

The method of manufacturing a thinner composition according to another embodiment of the present invention includes the steps of forming an azeotropic mixture in a thinner waste liquid and a thinner waste solution in a reactor to distill and remove low boiling point impurities having a lower boiling point than the thinner compound Removing residual impurities in the reactor after the step of removing the low boiling point impurities; and removing the residues from the reactor by distillation in the reactor to remove high boiling point impurities having a higher boiling point than the thinner compound Distilling off the distillate to obtain a composition for obtaining a thinner composition, and a high boiling point impurity removing step of removing high boiling point impurities remaining in the reactor after the step of obtaining the composition. The thinner composition according to another embodiment of the present invention is different from the thinner waste solution manufacturing method according to the embodiment of the present invention in which the high boiling point impurities are removed first and the low boiling point impurities are later removed to obtain the thinner composition, Since there is only difference in that the impurity is removed first and then the high boiling point impurity is removed to obtain the thinner composition, a detailed description of common parts will be omitted.

The step of removing the low boiling point impurities is a step of distilling a thinner waste liquid into a reactor and distilling away low boiling point impurities having a boiling point lower than that of the thinner compound. In the removal of the low-boiling point material, it is preferable that the low-boiling point impurity starts to be removed at a temperature of 73 캜 and is removed until the temperature becomes 145 캜.

The residue collecting step is a step of collecting the residue remaining in the reactor after the low boiling point impurity removing step.

The step of obtaining the composition is a step of distilling the residue in a reactor to distill and recover a distillate from which high boiling point impurities having a higher boiling point than the compound for thinner have been removed to obtain a thinner composition. In the step of obtaining the composition, it is preferable that the distillate is recovered from 135 ° C until recovered to 157 ° C. In the thinner composition (distillate) obtained in the step of obtaining the composition, the thinner compound is contained in an amount of 97 to 99% by weight based on the total weight of the distillate, and the thinner composition is used in the rinsing step of cleaning the photoresist during the display manufacturing process 65 to 75 parts by weight of 1-methoxy-2-propanol acetate, 8 to 10 parts by weight of 2-hydroxyisobutyric acid methyl ester and 16 to 20 parts by weight of ethyl lactate.

The high boiling point impurity removing step may include removing the high boiling point impurities remaining in the reactor after the step of obtaining the composition, removing an ethyl-3-ethoxypropionate removing step, And other high boiling point impurity removing steps for removing high boiling point impurities other than propionate. The removal of the low-boiling point impurity from the low-boiling point material starts at 73 ° C, and is removed until the temperature reaches 142 ° C. Recovery of the low-boiling point impurity starts at 132 ° C, , The thinner composition (distillate) obtained in the step of obtaining the composition, when the other conditions are the same as the method of producing the thinner composition according to another embodiment of the present invention, 95 to 98% by weight based on the total weight of water. The thinner composition is used in a rinsing process for cleaning a photoresist during a display manufacturing process. The thinner composition comprises 50 to 60 parts by weight of 1-methoxy-2-propanol acetate, 23 to 30 parts by weight of hydroxyisobutric acid methyl ester and 12 to 16 parts by weight of ethyl lactate.

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, the present invention will be described in detail with reference to the accompanying drawings. However, the present invention is to be described in more detail. However, the scope of the present invention is not limited thereto.

≪ Example 1 >

(1) 27% by weight of 1-methoxy-2-propanol acetate, 13% by weight of 2-hydroxyisobutyric acid methyl ester, 10% by weight of ethyl lactate, 36% by weight of ethyl 3-ethoxypropionate, 1% by weight of water and other impurities (including 1-methoxy-2-propanol, N-butyl acetate, cyclohexanone, gamma butyrolactone and isopropanol, (1 kg) of 13 weight% of distilled water was distilled using a distiller. Recovery of the distillate was started at a temperature of 140 占 폚, and the distillate was recovered until the temperature reached 152 占 폚.

(2) The recovered distillate (liquid state) is further distilled using a distiller to form a new distillate (low boiling point impurity). The distillate is removed from the time when the temperature becomes 78 ° C, The distillate was removed. Thereafter, the residue remaining in the distillation column was recovered. As a result, it was found that 70.5% by weight of 1-methoxy-2-propanol acetate, 9.1% by weight of 2-hydroxyisobutyric acid methyl ester, 18% by weight of ethyl lactate, 300 g of a thinner composition consisting of 0.16% by weight of 3-ethoxypropionate, 0.01% by weight of water and 2.39% by weight of other impurities was obtained.

≪ Examples 2 to 4 >

(1) Example 2

The distillate was recovered from the time when the temperature reached 137 ° C in Example 1 (1) until the temperature reached 155 ° C, and from the time when the temperature in Example 1 (2) reached 78 ° C The residue was recovered in the same manner as in Example 1, except that the distillate was removed and the distillate was removed until the temperature reached 137 ° C. Thereafter, the residue remaining in the distillation column was recovered and found to contain 54.5% by weight of 1-methoxy-2-propanol acetate, 26.5% by weight of 2-hydroxyisobutyric acid methyl ester, 14% by weight of ethyl lactate, 520 g of a thinner composition consisting of 0% by weight of 3-ethoxypropionate, 0.01% by weight of water and 4.99% by weight of other impurities was obtained.

(2) Example 3

70.5 parts by weight of 1-methoxy-2-propanol acetate, 9.1 parts by weight of 2-hydroxyisobutyric acid methyl ester and 18 parts by weight of ethyl lactate were formed.

(3) Example 4

54.5 parts by weight of 1-methoxy-2-propanol acetate, 26.5 parts by weight of 2-hydroxyisobutyric acid methyl ester and 14 parts by weight of ethyl lactate.

<Comparative Example>

(1) Comparative Example 1

70 parts by weight of 1-methoxy-2-propanol acetate and 30 parts by weight of 1-methoxy-2-propanol were formed.

(2) Comparative Example 2

Ethyl-3-ethoxypropionate was further added to the thinner composition obtained in Example 1 to obtain 70.5 parts by weight of 1-methoxy-2-propanol acetate, 9.1 parts by weight of 2-hydroxyisobutyric acid methyl ester, 18 parts by weight of ethyl lactate, 2.16 parts by weight of ethyl-3-ethoxypropionate, 0.01 part by weight of water and 2.39 parts by weight of other impurities were formed.

(3) Comparative Example 3

Water was further added to the thinner composition obtained in Example 1 to obtain 70.5 parts by weight of 1-methoxy-2-propanol acetate, 9.1 parts by weight of 2-hydroxyisobutyric acid methyl ester, 18 parts by weight of ethyl lactate, 0.16 parts by weight of 3-ethoxypropionate, 1.01 part by weight of water and 2.39 parts by weight of other impurities.

(4) Comparative Example 4

40 parts by weight of 1-methoxy-2-propanol acetate, 30 parts by weight of 2-hydroxyisobutyric acid methyl ester and 30 parts by weight of ethyl lactate were formed.

<Experimental Example> Photoresist cleaning force test of thinner composition

(1) A commercially available photoresist used in a display manufacturing process was applied to a slide glass and soft baking was performed in an oven at 80 ° C for 1 hour to prepare a sample as shown in FIG. Each of the thinner compositions (50 ml) of Examples 1 to 4 and Comparative Examples 1 to 4 was placed in a 100 ml beaker, the beaker was placed in an ultrasonic washing machine, the specimen was fully immersed in the beaker, and the ultrasonic washing machine was operated.

(2) In order to confirm whether the thinner compositions according to the examples and the comparative examples are superior to the comparative example 1 which is a commercially available thinner for display, excellent in photoresist cleansing power, The test pieces were visually inspected to determine whether the photoresist cleansing power was better or worse than when the thinner composition of Comparative Example 1 was used. Table 1 shows that the photoresist cleansing power of Examples 1 to 4 is superior to that of Comparative Example 1, so that the thinner composition obtained according to the present invention can be used as a thinner for display, To 4 show that the photoresist cleansing power is lower than that of Comparative Example 1. As a result, ethyl-3-ethoxypropionate, water lowers detergency, and 1-methoxy-2-propanol acetate, 2- Isobutyrric acid methyl ester and ethyl lactate, it is not possible to perform the role of a thinner for display unless they are mixed at a specific ratio.

Example 1 Example 2 Example 3 Example 4 Comparative Example 2 Comparative Example 3 Comparative Example 4 Comparative Example 1
Contrast cleaning power good good good good Poor Poor Poor

(3) In order to precisely compare the photoresist cleaning force of Comparative Example 1, which is a typical commercially available thinner for display, with the embodiments of the present invention, after the ultrasonic washing machine was operated in Experimental Example (1), 1, 3, 5 and 10 The specimens used in Examples 1 and 2 and Comparative Example 1 were taken out and photographed and shown in FIG. 2, and the time at which the photoresist was completely removed from the slide glass was measured and shown in Table 2. 2 and Table 2, it can be seen that Examples 1 and 2 have remarkably superior cleaning power as compared with Comparative Example 1, and that Example 1 is more excellent in cleaning power than Example 2.

Example 1 Example 2 Comparative Example 1 Removal Time (s) 16.4 20.4 38.15

(4) In order to compare the detergency according to presence or absence of other impurities or the like, after operating the ultrasonic cleaner in Experimental Example (1), the specimens used in Examples 1 to 4 were visually inspected, The photoresist was completely removed after 16.4 seconds in Example 1, 20.4 seconds in Example 2, 15.8 seconds in Example 3, and 19.8 seconds in Example 4, respectively. It can be seen from this that even if a small amount (less than about 6% by weight) of other impurities are mixed in the thinner composition, it does not affect the photoresist cleansing power.

(5) From the above experimental results, it can be seen that the thinner compositions of Examples 1 and 2 are superior to the typical commercialized thinner for display (Comparative Example 1) by the manufacturing method of the present invention. In Example 2 It can be seen that the manufacturing process according to the present invention can significantly increase the recovery rate.

While the present invention has been described in connection with what is presently considered to be practical exemplary embodiments, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, Should be interpreted as falling within the scope of.

Claims (11)

A thinner composition for cleaning a photoresist,
Wherein the photoresist cleaning thinner composition comprises 1-methoxy-2-propanol acetate, 2-hydroxyisobutyric acid methyl ester and ethyl lactate,
Wherein the photoresist cleaning thinner composition is derived from a waste liquid of a thinner used in a rinsing process for cleaning a photoresist during a semiconductor manufacturing process. The photoresist cleaning thinner composition of claim 1,
Methoxy-2-propanol acetate, 8 to 10 parts by weight of 2-hydroxyisobutyric acid methyl ester and 16 to 20 parts by weight of ethyl lactate. Composition. The photoresist cleaning thinner composition of claim 1,
50 to 60 parts by weight of 1-methoxy-2-propanol acetate, 23 to 30 parts by weight of 2-hydroxyisobutyric acid methyl ester and 12 to 16 parts by weight of ethyl lactate. Composition. delete The photoresist cleaning thinner composition of claim 1,
Wherein the photoresist is used in a rinsing process for cleaning a photoresist during a display manufacturing process. The photoresist cleaning thinner composition according to claim 1,
A thinning step of placing the thinner waste solution in a reactor and distilling the distillate from which a high boiling point impurity having a higher boiling point than the thinner compound is removed; A high boiling point material removing step of removing high boiling point impurities remaining in the reactor after the recovering step; Removing the low boiling point material by distilling the low boiling point impurity having a lower boiling point than the compound for thinner by distilling the distillate into a reactor; And recovering the residue remaining in the reactor after the step of removing the low boiling point material to obtain a thinner composition. The method according to claim 6,
In the recovering step, the thinner waste liquid in which the azeotropic mixture is formed is used as the thinner waste liquid,
Wherein the high boiling point impurity includes at least one of a compound having a higher boiling point than the compound for the thinner and an azeotropic mixture having a higher boiling point than the compound for the thinner,
Wherein the low boiling point impurity comprises at least one of a compound having a lower boiling point than the compound for the thinner and an azeotropic mixture having a lower boiling point than the compound for the thinner. The method according to claim 6,
The thinner waste solution comprises 1-methoxy-2-propanol acetate, 2-hydroxyisobutyric acid methyl ester, ethyl lactate and impurities,
Wherein the high boiling point material removing step includes an expelling step of removing ethyl-3-ethoxypropionate. The method according to claim 6,
The thinner waste solution is a waste solution of thinner used in a rinsing process for cleaning photoresist during a semiconductor manufacturing process,
Wherein the thinner composition is used in a rinsing process for cleaning a photoresist during a display manufacturing process. The method according to claim 6,
In the recovering step, the distillate starts to be recovered from 135 ° C until recovered to 157 ° C. In the removing of the low boiling point material, the low boiling point impurity starts to be removed from 73 ° C, Lt; / RTI &gt;
The photoresist cleaning thinner composition includes 65 to 75 parts by weight of 1-methoxy-2-propanol acetate, 8 to 10 parts by weight of 2-hydroxyisobutyric acid methyl ester and 16 to 20 parts by weight of ethyl lactate Wherein the photoresist cleaner is a thinner composition for cleaning a photoresist. The method according to claim 6,
In the recovering step, the distillate starts to be recovered from 132 ° C until the temperature reaches 160 ° C. In the removing of the low boiling point material, the low boiling point impurity starts to be removed from 73 ° C, Lt; / RTI &gt;
The photoresist cleaning thinner composition includes 50 to 60 parts by weight of 1-methoxy-2-propanol acetate, 23 to 30 parts by weight of 2-hydroxyisobutyric acid methyl ester and 12 to 16 parts by weight of ethyl lactate Wherein the photoresist cleaner is a thinner composition for cleaning a photoresist.

Images