KR101950440B1 - Apparatus for processing substrate and method for processing the same - Google Patents

Abstract

[0001] The present invention relates to a substrate processing apparatus and a substrate processing method, and more particularly, to a plasma processing apparatus and a substrate processing method, in which a thin film is alternately deposited to a plurality of layers by controlling a plasma power supplied to the reaction chamber using a variable capacitor provided between an impedance matcher and a reaction chamber And supplying the plasma power matched through the impedance matcher to the reaction chamber; And varying the capacitance of the variable capacitor so that the thickness of the thin film is constant by using the chamber characteristic information and the chamber impedance information which are variable during the thin film deposition, The film characteristics can be kept constant.

Description

[0001] The present invention relates to a substrate processing apparatus and a substrate processing method,

The present invention relates to a substrate processing apparatus and a substrate processing method, and more particularly, to a substrate processing apparatus and a substrate processing method in which film thicknesses and film characteristics of each layer repeatedly deposited are kept constant.

Plasma-based processes have been developed in semiconductor device manufacturing processes. For example, the plasma enhanced chemical vapor deposition (PECVD) process is advantageous in that the raw material gas is activated by the plasma and deposited on the substrate, so that it can be deposited at a lower temperature than the conventional deposition process at a higher rate have.

In this plasma chemical vapor deposition apparatus (PECVD), after a substrate is placed on a substrate support 110 in a chamber, a source gas is injected through a gas injection means (showerhead), RF power is applied to activate the source gas, A predetermined film is deposited. The deposition is performed on the substrate, and the generated gas or the by-product gas of the source gas is discharged using an exhaust pipe formed in the chamber and an exhaust pump connected to the exhaust pipe. As described above, PECVD promotes thin film deposition by causing a chemical reaction at a low temperature by activating a source gas by using plasma to improve reactivity.

On the other hand, the thickness and characteristics of the film gradually change due to the deposited film and residual gas during the deposition of a plurality of layers of a nitride film and an oxide film for the fabrication of a 3D memory which is a vertical stacked memory. Therefore, in order to keep the film thickness and characteristics constant, it is necessary to change the value of the RF plasma power applied to the plasma every time the deposition is performed in plural layers. In this case, since the impedance matching device has to further match the impedance, There is a problem to lose.

Korea Registration No. 755116

SUMMARY OF THE INVENTION It is an object of the present invention to maintain constant film thickness and film characteristics of each layer repeatedly deposited on a substrate. It is another object of the present invention to provide a hardware device for maintaining the film thickness and the film characteristics of each layer constant when the film is repeatedly deposited on the substrate.

A substrate processing apparatus according to an embodiment of the present invention includes: a reaction chamber for depositing different thin films alternately into a plurality of layers; A gas injector for injecting a source gas into the deposition space in the reaction chamber; A substrate support disposed opposite the gas ejector; A plasma power supply for applying a plasma power to the gas injector; An impedance matching unit provided between the plasma power supply unit and the reaction chamber to match the impedance; A plasma power regulator disposed between the impedance matcher and the reaction chamber and including a variable capacitor for controlling a plasma power applied to the gas injector; And a controller for adjusting the capacitance value of the variable capacitor of the plasma power controller whenever the thin film is deposited such that different thin films have a constant thickness using the chamber impedance information and the chamber characteristic information, .

The control unit may include: a measurement unit for measuring voltage and current at a node between the variable capacitor and the reaction chamber; Calculating a resistance value which is a real value of an impedance phase using the voltage and the current, calculating anticipated thickness information of the thin film using the calculated resistance value, and calculating estimated thickness information of the thin film, The variable capacitor can be adjusted so as to correspond to the capacitance value of the variable capacitor with respect to the expected thickness of the thin film calculated using the characteristic information. At this time, the chamber characteristic information may be a rate of change of capacitance of the variable capacitor according to a change in thin film thickness when alternate thin films are alternately deposited on the substrate.

The controller may further include: a measuring unit that measures voltage and current at a node between the variable capacitor and the reaction chamber; Calculating a resistance value which is a real value of an impedance phase by using the voltage and the current, determining a capacitor capacitance value with respect to a predicted thickness of the thin film by using the calculated resistance value and the chamber characteristic information, The variable capacitor can be adjusted to correspond to the determined capacitance value of the variable capacitor. At this time, the chamber characteristic information may be the capacitance of the variable capacitor according to the resistance value.

A substrate processing method according to an embodiment of the present invention is a substrate processing method for controlling a plasma power supplied to the reaction chamber by using a variable capacitor provided between an impedance matcher and a reaction chamber, A method for processing a plasma, the method comprising: supplying plasma power matched through the impedance matcher to the reaction chamber; And varying the capacitance of the variable capacitor so that the thickness of the thin film is constant using the chamber impedance information and the chamber characteristic information during the thin film deposition.

Wherein the step of varying the capacitance comprises the steps of measuring a voltage and a current between the impedance matcher and the reaction chamber and calculating a resistance value which is a real value of an impedance phase using the voltage and the current; Calculating estimated thickness information of the thin film by using the calculated resistance value, determining a capacitor capacitance value with respect to a predicted thickness of the thin film by using the estimated thickness information of the thin film and the chamber characteristic information, So that the capacitance of the variable capacitor can be varied.

The chamber characteristic information may be a capacitance change rate of the variable capacitor according to a change in thin film thickness when alternate thin films are alternately deposited on the substrate.

Wherein the step of varying the capacitance comprises the steps of measuring a voltage and a current between the reaction chamber and the impedance matcher and calculating a resistance value of a real value of the impedance phase using the voltage and the current; The capacitor capacitance value for the expected thickness of the thin film may be determined using the calculated resistance value and the chamber characteristic information, and the capacitance of the variable capacitor may be varied to correspond to the capacitor capacitance value. At this time, the chamber characteristic information may be the capacitance of the variable capacitor according to the resistance value.

According to the embodiment of the present invention, by providing a variable capacitor at the output terminal of the impedance matcher to adjust the capacitance of the variable capacitor, the film thickness and the film characteristic of each layer repeatedly deposited on the substrate are kept constant . Also, by providing a simple hardware device means instead of a complicated software algorithm for changing the plasma supply power, convenience of operation and deposition reliability can be improved.

1 is a view illustrating a substrate processing apparatus according to an embodiment of the present invention.
2 is a circuit block diagram of a substrate processing apparatus for controlling film thicknesses according to an embodiment of the present invention.
FIG. 3 is a graph showing the layer thickness and the chamber resistance according to the number of deposited layers.
4 is a graph showing a state in which the thickness of a film to be deposited on the substrate decreases as the capacitance of the variable capacitor increases.
FIG. 5 is a graph showing a graph used to extract a thickness function (Y _THK ) using the number of deposited layers (X _N ) as a parameter according to an embodiment of the present invention.
FIG. 6 is a graph showing a graph used for extracting a resistance function (Y _R ) using the number of deposited layers (X _N ) as a parameter according to an embodiment of the present invention.
7 is a flowchart illustrating a substrate processing process according to an embodiment of the present invention.
8 is a graph showing a change in the thickness of the film for each layer according to the number of deposited layers on the substrate.
FIG. 9 is a graph showing the stress characteristics of the film according to the number of deposited layers of the substrate.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. It will be apparent to those skilled in the art that the present invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, It is provided to let you know. Wherein like reference numerals refer to like elements throughout.

FIG. 1 is a view showing a substrate processing apparatus according to an embodiment of the present invention, and FIG. 2 is a circuit block diagram of a substrate processing apparatus for controlling film thicknesses according to an embodiment of the present invention.

The reaction chamber 100 is provided with a predetermined reaction region and is air-tightly maintained to repeatedly deposit a plurality of thin films of the same kind on the substrate, or to mix a plurality of different thin films by alternate deposition, repeated deposition, Deposition of a plurality of layers may be performed. For example, when a plurality of layers are deposited on a substrate, a nitride film and an oxide film may be alternately stacked for manufacturing a 3D memory. The reaction chamber 100 is provided with a reaction part having a predetermined vapor deposition space including a substantially circular plane part and a side wall part extending upward from the plane part, And a cover to cover the opening. Of course, the reaction part and the cover may be formed in various shapes other than the circular shape, for example, a shape corresponding to the substrate shape.

A substrate support 110 is provided at the bottom of the reaction chamber 100 and is disposed at a position facing the gas injector 120. The substrate support 110 may be provided with, for example, an electrostatic chuck or the like so that the substrate 10 loaded into the reaction chamber 100 can be seated. The substrate support 110 may be provided in a substantially circular shape, but may be formed in a shape corresponding to the shape of the substrate 10, and may be made larger than the substrate 10. A substrate elevator (not shown) is provided below the substrate support 110 to move the substrate support 110 up and down. The substrate elevator moves the substrate support 110 closer to the gas injector 120 when the substrate is seated on the substrate support 110.

A heating element 111 may be embedded in the substrate support 110 or may be positioned in contact with the bottom of the substrate support 110 to heat the substrate support 110. The heating element 111 is implemented by a heater or the like and generates heat at a predetermined temperature to heat the substrate support 110 so that a plurality of layers deposited on the substrate can be easily deposited on the substrate. The heater power supply unit 700 generates a voltage and applies the voltage to the heating body 111 to generate heat. To this end, one node of the heater power supply 600 is connected to the ground (GND) and the other node is connected to the heating element 111.

The gas injector 120 is installed at an upper portion in the reaction chamber 100 at a position opposite to the substrate support 110 and injects the raw material gas to the lower side of the reaction chamber 100. The gas injector 120 has an upper portion connected to the source gas source and a lower portion formed with a plurality of injection holes for injecting the source gas into the substrate. Although the gas injector 120 is formed in a substantially circular shape, it may be formed in the shape of a substrate. In addition, the gas injector 120 may be manufactured to have the same size as the substrate support 110. In addition, the gas injector 120 may have various shapes such as a shower head shape, a nozzle shape, and the like.

Meanwhile, the raw material gas injected from the gas injector 120 is activated and deposited on the substrate. In order to activate the raw material gas, electric power (hereinafter referred to as "plasma power") provided in the form of RF provided from the plasma power supply unit 200 And is applied to the gas injector 120. The source gas between the gas injector 120 and the substrate support 110 is activated by the plasma power applied to the gas injector 120, and a film is deposited on the substrate.

The plasma power supply unit 200 is installed to excite the source gas into a plasma state by using plasma. The plasma power supply 200 may be implemented in a single mode with one RF power source or in a dual mode with two RF power sources. The plasma power supply 200 applies the plasma power provided in RF form of the reaction chamber 100 to the gas injector 120 on the substrate. Thus, plasma power can be supplied to the reaction space, which is the deposition space of the substrate between the gas injector 120 and the substrate support 110.

The impedance matcher 300 is an impedance matcher for eliminating the reflection loss of the plasma power. The impedance matcher 300 is provided between the plasma power supply 200 corresponding to the power source and the gas injector 120 corresponding to the load Located. For reference, impedance matching refers to impedance designing so that the impedances of both are the same so that there is no return loss when the power supply and the load circuit are connected. For example, when the plasma power supply unit 200 has a resistance of 50 OMEGA, the impedance matching unit 300 may be configured to match the resistance value of the impedance matching unit 300 with the reaction chamber 100 so that the combined resistance value of the impedance matching unit 300 is 50 OMEGA It plays a role.

On the other hand, the thickness and the stress of the film gradually change due to the deposited film and residual gas during deposition in a plurality of layers. The embodiment of the present invention is characterized in that the output power of the plasma power supply 200 is fixed and power is supplied through a separate hardware configuration every time the film is deposited in multiple layers so that the film thickness of each layer has a thickness within the tolerance range And the film thickness of each layer is adjusted to be constant.

The resistance R from the node between the impedance matcher 300 and the reaction chamber 100 to the ground increases as the number of layers increases on the substrate placed in the reaction chamber 100 as shown in FIG. Quot; chamber resistance ") is reduced. That is, the resistance value of the chamber resistance consuming the plasma generating power exhibits an inversely proportional characteristic which gradually decreases as the entire thickness of the film to be deposited on the substrate increases. As a result, as shown in FIG. 3, as the resistance value R of the chamber resistance is reduced, the thickness of each layer is not constant but gradually increases.

The embodiment of the present invention allows the resistance value of the chamber resistance to be constant so that the film thickness of each layer to be deposited has a constant film thickness within the tolerance range. To this end, the embodiment of the present invention includes a plasma power regulator 400 having a variable capacitor 410, a controller 600, and a plasma power regulator 410 including a measuring unit 500.

The plasma power regulator 400 regulates the plasma power by varying the variable capacitor 410 between the impedance matcher 300 and the reaction chamber 100. The variable capacitor 410 is located at the node N1 between the plasma power supply 200 and the reaction chamber 100 and the capacitance of the variable capacitor 410 can be varied. The variable capacitor 410 has a first electrode connected to the node N1 between the plasma power supply 200 and the reaction chamber 100 and a second electrode connected to the ground GND. When the measuring unit 600 is provided, the variable capacitor 410 may be provided at the nodes of the plasma power supply unit 200 and the measuring unit 600. When the impedance matcher 300 is provided, the variable capacitor 410 may be located at a node between the impedance matcher 300 and the reaction chamber 100. The variable capacitor 410 opposes the two electrode plates so as to face each other and rotates the electrode plate to change the facing area so that the capacitance between the electrode plates can be varied.

The controller 600 is connected to the variable capacitor 410 to vary the capacitance of the variable capacitor 410 so that the film thickness of each layer deposited on the substrate has a thickness within the tolerance range. That is, the control unit 600 adjusts the capacitance of the variable capacitor of the plasma power control unit whenever each thin film is deposited so that different thin films have a constant thickness.

For this purpose, the controller 600 increases the capacitance of the variable capacitor 410 by reducing the resistance value of the chamber resistance when the film is deposited on the substrate in a plurality of layers, thereby further consuming the plasma generating power, So that the film thickness of the film can be kept constant.

The control unit 600 explains a method of increasing the capacitance of the variable capacitor 410 by a decrease in the resistance value of the chamber resistance when depositing a plurality of layers on the substrate to further consume the plasma generation power.

First, characteristics of the reaction chamber 100 in which the thickness decreases by several angstroms per 1 pF of the variable capacitor 410 during deposition in the reaction chamber 100 is grasped. As shown in FIG. 4, as the capacitance of the variable capacitor 410 increases, the thickness of the film deposited on the substrate decreases. The plasma power supplied from the plasma power supply 200 is consumed by the increased capacitance, and the plasma is reduced accordingly, thereby reducing the thickness of the deposited film. A capacitance calculating equation as shown in [Equation 2] can be obtained as a slope ratio a 'at which the film thickness Y _thk per 1 pF of the variable capacitor decreases by several angles is derived as shown in [Equation 1].

[Equation 1] a '= Y _thk / X _cap

[Equation 2] X _cap = Y _thk / a '

Here, a 'represents a slope ratio at which the thickness of the film deposited per 1 pF of the variable capacitor decreases by several angstroms, Y _thk represents the film thickness, and X _cap represents the capacitance of the variable capacitor 410.

Further, the film thickness of each layer is measured for the same number of deposition layers by experiment for the same reaction chamber 100 to obtain a thickness function (Y _THK ) using the number of deposition layers (X _N ) as a parameter as shown in FIG. 5 . The resistance R of the chamber is measured by the number of deposited layers X _N , that is, the number of deposited layers to obtain a resistance function Y _R as a parameter of the number of deposited layers X _N as shown in FIG. 6 have. Equation 3 below represents the thickness function Y _THK when the slope is shown in Fig. 5, and Equation 4 represents the resistance function Y _R when the slope of Fig. 6 is obtained.

[Formula 3] Y _THK = 2.721 X _N + 486.12

[Formula 4] Y _R = -0.0687 X _N + 53.759

[Formula 3] and [Formula 4] can be made to form one equation of the thickness function (Y _THK ) as shown in the following [Formula 5] through X _N.

[Formula 5]

Here, the abs function represents an absolute value. The absolute value is used because the thickness increases as the number of deposited layers increases.

By substituting the thickness function (Y _THK ) obtained in [Formula 5] into [Formula 2], the capacitance according to the resistance value as in [Formula 6] can be calculated.

[Formula 6]

Therefore, by measuring the resistance value at the node (N1) between the impedance matching device 300 and the reaction chamber 100, the measured resistance value is substituted to Y _R in [Equation 6] to calculate the capacitance (X _cap). The capacitance is adjusted by the capacitance of the variable capacitor as the calculated capacitance (X _cap ).

As a result, the control unit 420 calculates a real value of the impedance phase applied to the reaction chamber 100 using a phase difference between the measured voltage value and the current value, and sets the resistance value, which is a real number value of the calculated impedance phase, The capacitance X _cap can be calculated by substituting into Y _R in Equation 6, and the calculated capacitance can be adjusted in real time as the capacitance value of the variable capacitor 410.

And a measuring unit 500 for measuring a voltage value and a current value at a node between the variable capacitor and the reaction chamber to calculate a real value of the impedance applied to the reaction chamber 100. The measurement unit 500 measures the voltage phase and the current phase at a node between the variable capacitor 410 and the reaction chamber 100. This is to calculate the chamber resistance, which is the resistance from the node to the ground, between the impedance matcher 300 and the reaction chamber 100.

The complex-form impedance phase (Z) can be calculated using the voltage phase (V) and the current phase (I) as shown in Equation (7).

[Equation 7] Z = V / I

In addition, the impedance phase (Z) having the vector component is composed of a resistor R which is a real number and a reactance X which is an imaginary number, as shown in [Expression 8].

[Equation 8] Z = R + jX

Therefore, the value of the resistance R can be calculated by expressing the impedance phase calculated in [Expression 7] as a complex number as shown in [Expression 8]. The real resistor R is a parameter that consumes real energy.

Therefore, the control unit 600 calculates the real value of the impedance applied to the reaction chamber 100 using the phase difference between the voltage value and the current value measured by the measuring unit 500, and outputs the real value of the calculated impedance The resistance value is substituted into Y _R in [Equation 6] to calculate the capacitance X _cap , and the calculated capacitance can be adjusted in real time as the capacitance value of the variable capacitor 410.

By varying the capacitance value (capacitance) of the variable capacitor 410 according to the resistance value of the chamber resistance measured in this way, the film thickness of each deposited layer can have a constant film thickness within the tolerance range.

7 is a flowchart illustrating a substrate processing process according to an embodiment of the present invention.

A method of processing a substrate in which different thin films are alternately deposited in a plurality of layers by controlling a plasma power using a variable capacitor for controlling a plasma power between an impedance matcher and a reaction chamber, And a capacitance calculating equation for calculating a capacitance value of the variable capacitor according to a resistance value measured at the node.

Generating a capacitance calculation formula is, "to measure, the slope ratio (a film thickness (Y _thk) a few Å decrease slope ratio of (a), deposited per 1pF of the variable capacitor) and the film thickness function (Y _thk (X _cap = Y _thk / a ') having the capacitance (X _cap = Y _thk / a') (S710). That is, as described in the above-mentioned [Expression 2], the capacitance relation (X _cap = Y _thk / a ') is measured by measuring the slope ratio a' at which the thickness of the film deposited per 1 pF of the variable capacitor decreases by several angstroms .

Then, the process has to experimentally calculate the deposition Number of floors (X _N) by the film thickness function (Y _THK) and deposition Number of floors the resistance a function of (X _N) per reaction chamber (Y _R). That is, the film thickness function (Y _THK ) for each deposition number (X _N ) is calculated through the experiment as described in [Formula 3] above, and the number of deposition layers (X _N (Y _R ) of the reaction chamber.

Thereafter, the film thickness function Y _THK having the resistance function (Y _R ) is calculated based on the number of deposited layers (X _N ). In other words, the film thickness function (Y _THK ) is calculated through the simultaneous equations of [Equation 3] and [Equation 4] as described in [Equation 5] above.

After generating the film thickness function, the substrate loading process for loading the substrate onto the substrate support 110 in the reaction chamber 100 is performed (S720). When the substrate is loaded and the substrate is placed on the substrate support 110, when the film is deposited on the substrate in a plurality of layers, the capacitance of the variable capacitor 410 is adjusted so that the film thickness of each layer to be deposited has a film thickness within an allowable error range (S750). This is to increase the capacitance of the variable capacitor 410 by a decrease in the resistance value of the chamber resistance when depositing on a plurality of layers on the substrate to further consume the plasma generating power.

After the variable capacitors are changed by the number of layers to be deposited, the atmosphere in the reaction chamber 100 is adjusted to supply the gas to the reaction space in the reaction chamber 100, and plasma power is supplied to the gas injector 120, 100) and depositing a thin film (S730). Thus, by depositing a plurality of layers on the substrate, the capacitance of the variable capacitor 410 is increased by the amount of decrease in the resistance value of the chamber resistance to further consume the plasma generating power so that the film thickness of the layer deposited as a plurality of layers is kept constant can do.

Meanwhile, the process of varying the capacitance of the variable capacitor has a process of measuring the voltage and current between the variable capacitor and the process chamber. And a resistance value calculation step (S740) of calculating a real value of the impedance phase using the voltage and the current. This resistance value calculation process can be calculated by the phase relation of [Equation 7] and [Equation 8] described above.

Subsequently, a process of calculating a predicted thickness of the thin film by substituting the calculated resistance value, which is a real number value, into the film thickness function (Y _THK ) of [Equation 5]. When the estimated thickness (Y _thk ) of the thin film is calculated, the relationship between the film thickness (Y _thk ) and the chamber characteristic information and the slope ratio (a '= Y _thk / X _cap ) of the slope ratios of [Equation 1] (a ') (the rate of change of the variable capacitor), thereby calculating the capacitance X _cap .

Thereafter, the capacitance value of the variable capacitor may be set to the calculated capacitance (X _cap ) so that the capacitance of each layer deposited on the substrate has a thickness within the tolerance range (S750).

In addition, the process of varying the capacitance of the variable capacitor (S750) has a process of measuring the voltage and current between the variable capacitor and the process chamber. And a resistance value calculation step (S740) of calculating a real value of the impedance phase using the voltage and the current. This resistance value calculation process can be calculated by the phase relation of [Equation 7] and [Equation 8] described above.

Thereafter, the variable capacitor capacity value for the expected thickness of the thin film is determined by comparing the calculated resistance value, which is a real number value, with the predetermined chamber characteristic information (here, there is a table in which the capacitance of the variable capacitor is already determined for each resistance value) The capacitance value of the variable capacitor is varied (S750) so that the film thickness of each layer deposited on the substrate has a film thickness within the tolerance range.

8 (a) and 8 (b) are graphs showing changes in the thickness of each layer according to the number of layers deposited on the substrate. FIG. 8 (a) FIG. 5 is a graph showing the thickness variation of each layer when the capacitance of the variable capacitor 410 is adjusted and deposited according to an embodiment of the present invention. FIG. Referring to FIG. 8B, it can be seen that, by adjusting the capacitance of the variable capacitor 410, the thickness of each layer does not increase even though the number of deposited layers increases and deposition increases. In the case of the conventional FIG. 8 (a), a thickness variation of 26 angstroms is generated, but in the case of FIG. 8 (b) of the present invention, the thickness variation is reduced by 7 angstroms.

9 (a) is a graph showing stress characteristics of each layer when the number of deposited layers is increased, and FIG. 9 (a) is a graph showing the stress characteristics of the respective layers when the number of deposited layers is increased. FIG. 9B is a graph showing a change in the stress characteristic of each layer when the capacitance of the variable capacitor 410 is adjusted and deposited according to an embodiment of the present invention. Referring to FIG. 9 (b), it can be seen that by adjusting the capacitance of the variable capacitor 410, the stress of the film is kept constant even if the number of deposited layers is increased and deposited. In the case of FIG. 9 (a), a stress variation of 80 occurs, but in the case of FIG. 9 (b) of the present invention, the stress variation is reduced to 4.3.

Although the present invention has been described with reference to the accompanying drawings and the preferred embodiments described above, the present invention is not limited thereto but is limited by the following claims. Accordingly, those skilled in the art will appreciate that various modifications and changes may be made thereto without departing from the spirit of the following claims.

100: reaction chamber 110: substrate support
120: Gas injector 200: Plasma power supply
400: Plasma power regulator
410: variable capacitor 500: measuring part
600:

Claims (10)

A reaction chamber in which different thin films are alternately deposited to form a plurality of layers;
A gas injector for injecting a source gas into a deposition space in the reaction chamber;
A substrate support disposed opposite the gas ejector;
A plasma power supply for applying plasma power to the gas injector;
An impedance matcher provided between the plasma power supply and the reaction chamber to match the impedance;
A plasma power regulator disposed between the impedance matcher and the reaction chamber and including a variable capacitor for controlling a plasma power applied to the gas injector; And
A controller for adjusting a capacitance value of the variable capacitor of the plasma power controller whenever the thin film is deposited so that different thin films have a constant thickness by using the chamber impedance information and the chamber characteristic information that are varied during the thin film deposition;
Lt; / RTI >
Wherein,
A measuring unit for measuring voltage and current at a node between the variable capacitor and the reaction chamber; Lt; / RTI >
Calculating a resistance value which is a real value of an impedance phase using the voltage and the current, calculating anticipated thickness information of the thin film using the calculated resistance value, and using the calculated anticipated thickness information of the thin film and the chamber characteristic information And adjusts the variable capacitor so as to correspond to a capacitance value of the variable capacitor with respect to a predicted thickness of the thin film. delete The method according to claim 1,
The chamber characteristic information
Wherein the rate of change of capacitance of the variable capacitor according to the change in the thickness of the thin film when the thin film is alternately deposited on the substrate. A reaction chamber in which different thin films are alternately deposited to form a plurality of layers;
A gas injector for injecting a source gas into a deposition space in the reaction chamber;
A substrate support disposed opposite the gas ejector;
A plasma power supply for applying plasma power to the gas injector;
An impedance matcher provided between the plasma power supply and the reaction chamber to match the impedance;
A plasma power regulator disposed between the impedance matcher and the reaction chamber and including a variable capacitor for controlling a plasma power applied to the gas injector; And
A controller for adjusting a capacitance value of the variable capacitor of the plasma power controller whenever the thin film is deposited so that different thin films have a constant thickness by using the chamber impedance information and the chamber characteristic information that are varied during the thin film deposition;
Lt; / RTI >
Wherein,
A measuring unit for measuring voltage and current at a node between the variable capacitor and the reaction chamber; Lt; / RTI >
Calculating a resistance value which is a real number value of the impedance phase by using the voltage and the current,
Wherein the controller determines the capacitor capacitance value for the expected thickness of the thin film by using the calculated resistance value and the chamber characteristic information and controls the variable capacitor to correspond to the determined capacitance value of the variable capacitor, . The method of claim 4,
Wherein the chamber characteristic information is a capacitance of a variable capacitor according to a resistance value. A substrate processing method for alternately depositing different thin films into a plurality of layers by controlling a plasma power supplied to the reaction chamber using a variable capacitor provided between an impedance matcher and a reaction chamber,
Supplying the plasma power matched through the impedance matcher to the reaction chamber;
Varying the capacitance of the variable capacitor so that the thickness of the thin film is constant using the chamber impedance information and the chamber characteristic information during the thin film deposition;
/ RTI >
Wherein the step of varying the capacitance comprises:
Measuring impedance and current between the impedance matcher and the reaction chamber and calculating a resistance value which is a real value of an impedance phase using the voltage and the current;
Calculating estimated thickness information of the thin film by using the calculated resistance value, determining a capacitor capacitance value with respect to a predicted thickness of the thin film by using the estimated thickness information of the thin film and the chamber characteristic information, Wherein the capacitance of the variable capacitor is varied to correspond to the capacitance of the variable capacitor. delete The method of claim 6,
The chamber characteristic information
Wherein the rate of change of capacitance of the variable capacitor according to a change in thickness of the thin film when the thin film is alternately deposited on the substrate. A substrate processing method for alternately depositing different thin films into a plurality of layers by controlling a plasma power supplied to the reaction chamber using a variable capacitor provided between an impedance matcher and a reaction chamber,
Supplying the plasma power matched through the impedance matcher to the reaction chamber;
Varying the capacitance of the variable capacitor so that the thickness of the thin film is constant using the chamber impedance information and the chamber characteristic information during the thin film deposition;
/ RTI >
Wherein the step of varying the capacitance comprises:
Measuring an impedance and a current between the reaction chamber and the impedance matcher and calculating a resistance value of a real value of the impedance phase using the voltage and the current;
Determining a capacitor capacitance value for the expected thickness of the thin film using the calculated resistance value and the chamber characteristic information, and varying the capacitance of the variable capacitor to correspond to the capacitor capacitance value. The method of claim 9,
Wherein the chamber characteristic information is a capacitance of a variable capacitor according to a resistance value.

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