KR101921237B1 - Building intergrated photovoltaics module - Google Patents

Abstract

The present invention relates to a building integrated solar cell module.
A building integrated solar cell module according to the present invention includes a first transparent substrate and a second transparent substrate facing each other; And a plurality of solar cells positioned between the first transparent substrate and the second transparent substrate, wherein each of the plurality of solar cells has a first electrode positioned in contact with a rear surface of the first transparent substrate; A photoelectric conversion section located on the rear surface of the plurality of first electrodes and including at least one p-type semiconductor layer, an i-type (intrinsic) semiconductor layer, and an n-type semiconductor layer; And a second electrode located on a rear surface of the photoelectric conversion unit, wherein in the plurality of solar cells, the photoelectric conversion unit includes a first photoelectric conversion layer located on the rear surface of the first electrode, and a second photoelectric conversion layer located on the rear surface of the first photoelectric conversion layer Wherein the intermediate reflective layer is made of microcrystalline silicon (μc-SiOx) containing oxygen (O), wherein the intermediate reflective layer comprises a second photoelectric conversion layer between the first photoelectric conversion layer and the second photoelectric conversion layer, Materials may be included.

Description

[0001] BUILDING INTERGRATED PHOTOVOLTAICS MODULE [0002]

The present invention relates to a building integrated solar cell module.

Generally, a solar cell is a power generating device capable of collecting sunlight to generate electric energy, and the demand for solar cell has been greatly increased according to recent high oil prices.

Such a conventional solar cell is installed at a certain angle on a roof or a roof of a building so that the sunlight can be vertically transmitted. However, in the case of a multi-generation high-rise building these days, There was a difficulty in installing solar cells.

In Korea, on the other hand, the supply of solar energy is small and the solar power generation system applied to the building is less. However, due to the interest of the international community and the increase of electric power demand, It is gradually increasing.

Since 2001, the institute has started to study the technology of applying photovoltaic power generation system in large scale construction environment for the development of BIPV technology under the supervision of the Institute of Energy Technology. The business contents include the development of integrated solar cell module for BIPV, the development of string / unit type power conditioner, the development of optimal design and construction technology, and the verification test. Through this, the foundation for BIPV research has been secured, Battery module was developed.

Building Integrated Photovoltaic (BIPV) is a photovoltaic module used as a building exterior material in addition to supplying electricity to the consumer by producing solar energy.

In general, in such a building integrated solar cell module, a part of the solar cell is generally patterned and removed with a relatively large width in order to enhance the mining effect.

However, in such a case, there is a disadvantage that the photovoltaic conversion efficiency of the solar cell module is inferior due to the appearance of streaks, and the solar cell module is relatively inferior in consideration of the characteristics of the solar cell module integrated with the building used as the exterior material of the building.

An object of the present invention is to provide a solar cell module with a built-in type solar cell module which is excellent in appearance and has a higher photoelectric conversion efficiency.

A building integrated solar cell module according to the present invention includes a first transparent substrate and a second transparent substrate facing each other; And a plurality of solar cells positioned between the first transparent substrate and the second transparent substrate, wherein each of the plurality of solar cells has a first electrode located on a rear surface of the first transparent substrate; A photoelectric conversion section located on the rear surface of the plurality of first electrodes and including at least one p-type semiconductor layer, an i-type (intrinsic) semiconductor layer, and an n-type semiconductor layer; And a second electrode located on a rear surface of the photoelectric conversion unit, wherein in the plurality of solar cells, the photoelectric conversion unit includes a first photoelectric conversion layer located on the rear surface of the first electrode, and a second photoelectric conversion layer located on the rear surface of the first photoelectric conversion layer Wherein the intermediate reflective layer is made of microcrystalline silicon (μc-SiOx) containing oxygen (O), wherein the intermediate reflective layer comprises a second photoelectric conversion layer between the first photoelectric conversion layer and the second photoelectric conversion layer, Materials may be included.

 Here, a plurality of solar cell cells can absorb 70% or more of light of 300 nm to 800 nm or less and 70% or more of light of 800 nm to 1100 nm in incident light.

The first electrode, the photoelectric conversion portion, and the second electrode included in each of the plurality of solar cells are divided by a plurality of first direction scribe patterns formed in the first direction, and each of the plurality of solar cells And may not include a plurality of second directional scribing patterns formed in a second direction intersecting the first direction and removing a portion of the photoelectric conversion unit included in each of the plurality of solar cell units.

In addition, in the plurality of solar cells, the photoelectric conversion unit may include a first photoelectric conversion layer located on the rear surface of the first electrode and a second photoelectric conversion layer located on the rear surface of the first photoelectric conversion layer.

Here, the first photoelectric conversion layer may include amorphous silicon (a-Si), and the second photoelectric conversion layer may include amorphous silicon (a-SiGe) including germanium (Ge).

At this time, the band gap energy Eg of the first photoelectric conversion layer is higher than the band gap energy Eg of the second photoelectric conversion layer, and the band gap energy Eg of the first photoelectric conversion layer is higher than the band gap energy Eg of the second photoelectric conversion layer. And may not overlap with the band gap energy Eg. For example, the band gap energy Eg of the first photoelectric conversion layer may be between 1.7 eV and 1.8 eV, and the band gap energy Eg of the second photoelectric conversion layer may be between 1.4 eV and 1.6 eV. For this purpose, the content of germanium (Ge) in the second photoelectric conversion layer can be set between 10 at% (atomic percent) and 53 at%.

Further, the intermediate reflection layer may further include a microcrystalline silicon (μc-SiOx) material containing oxygen (O), between the first photoelectric conversion layer and the second photoelectric conversion layer.

The building integrated solar cell module may further include a junction box electrically connected to both outermost cells of the plurality of solar cells, and the junction box may be located at the edge of the rear surface region of the second transparent substrate.

The integrated monolithic solar cell module according to the present invention forms a module in a transflective manner without including a plurality of second directional scribing patterns, thereby enhancing the appearance of the module and further improving the photoelectric conversion efficiency of the solar cell .

1 is a perspective view for explaining an example of a building integrated solar cell module (BIPV) according to the present invention.
FIG. 2 is a view illustrating an example in which the building-integrated solar cell module shown in FIG. 1 is coupled by a frame.
FIG. 3 is a view for explaining an example in which the building integrated type solar cell module shown in FIGS. 1 and 2 is used.
FIG. 4 is a top plan view of a plurality of solar cells positioned on a first transparent substrate in the building integrated solar cell module shown in FIG. 1; FIG.
5 is a cross-sectional view taken along the line V-V in Fig.
6 is a diagram for explaining a comparative example distinguishing from the present invention.
7 is a view for explaining a photoelectric conversion unit included in a plurality of solar cells in a building integrated solar cell module according to the present invention.
8 is a diagram for explaining the germanium (Ge) content of the photoelectric conversion portion according to the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art can easily carry out the present invention. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. In order to clearly illustrate the present invention, parts not related to the description are omitted, and similar parts are denoted by like reference characters throughout the specification.

In the drawings, the thickness is enlarged to clearly represent the layers and regions. When a layer, film, region, plate, or the like is referred to as being "on" another portion, it includes not only the case directly above another portion but also the case where there is another portion in between. Conversely, when a part is "directly over" another part, it means that there is no other part in the middle. Also, when a part is formed as "whole" on the other part, it means not only that it is formed on the entire surface (or the front surface) of the other part but also not on the edge part.

Hereinafter, a thin film solar cell module according to an embodiment of the present invention will be described with reference to the accompanying drawings.

FIG. 1 is a perspective view for explaining an example of a building integrated solar cell module (BIPV) according to the present invention, FIG. 2 is a view showing an example of a building integrated solar cell module shown in FIG. FIG. 3 is a view for explaining an example in which the building integrated type solar cell module shown in FIGS. 1 and 2 is used.

1, a solar cell module 1 according to the present invention includes a first transparent substrate 100 and a second transparent substrate 200 facing each other, a plurality of solar cells 10, A transparent encapsulant 40 positioned between the plurality of solar cells 10 and the second transparent substrate 200 and a transparent encapsulant 40 electrically connected to both outermost cells 10 of the plurality of solar cells 10 A junction box 70 may be further included.

Here, the first transparent substrate 100 and the second transparent substrate 200 may be a transparent glass substrate or a transparent sheet.

A plurality of solar cells 10 may be positioned between the first transparent substrate 100 and the second transparent substrate 200. The plurality of solar cells 10 may be formed in contact with the first transparent substrate 100. For example, the plurality of solar cells 10 may include a first electrode (not shown), a photoelectric conversion unit (not shown), and a second electrode (not shown).

The plurality of solar cells 10 are electrically connected to each other in series so that current flows when the outermost cells 10 on both sides of the plurality of solar cells 10 are connected to each other.

The transparent encapsulant 40 is disposed between the second electrode included in the plurality of solar cells 10 and the second transparent substrate 200 and may include a transparent material including an insulating material. Ethylene vinyl acetate (EVA).

The junction box 70 is electrically connected to the outermost cells 10 on both sides of the plurality of solar cells 10 as described above and the electricity generated from the plurality of solar cells 10 And transmits the collected power to the external power system of the module.

2, the junction box 70 may be located at the edge of the rear surface region of the second transparent substrate 200, and thus, It is possible to minimize the blocking of light of a long wavelength band transmitted through the solar cell module 1 of the building.

2, a plurality of solar cells 10 and a transparent encapsulant 40 are sandwiched between a first transparent substrate 100 and a second transparent substrate 30, And an edge region that is not overlapped with the plurality of solar cells 10 among the regions between the first and second transparent substrates 100 and 200 is a sealing member 60. [ And fixing the outer rim of the first transparent substrate 100 and the second transparent substrate 200 to the frame 50. In this case, Here, however, the frame 50 is not essential, and may be omitted if there are other fixing means other than the frame 50. [

As shown in FIG. 3, the building-integrated solar cell module 1 may be installed on an outer wall of a building or a greenhouse, for example, a window or a roof. The solar cell module 1 may be, for example, Most of the light in the wavelength band (for example, light in the band of 300 nm to 800 nm) belonging to the short wavelength band is absorbed (for example, absorbed by 70% or more) and used for solar power generation. (Eg, light in the wavelength band from 800 nm to 1100 nm) can be largely transmitted (for example, 70% or more) to contribute to the light inside the building or to be used as an energy source for plants in the greenhouse.

As described above, the solar cell module 1 according to the present invention generates light by absorbing light of 800 nm or less, which is excellent in photoelectric conversion efficiency, from solar cells by semi-transmitting incident light, Light between 800 nm and 1100 nm can be used to grow crops. As a result, it is possible to optimize solar power generation, crop cultivation or mining at the same time.

The building integrated solar cell module 1 according to the present invention will now be described in more detail.

FIG. 4 is a plan view of a plurality of solar cells located on the first transparent substrate in the building integrated solar cell module shown in FIG. 1, FIG. 5 is a sectional view taken along line V-V in FIG. Fig. 8 is a view for explaining a comparative example distinguishing from the present invention.

As shown in FIGS. 4 and 5, in the integrated solar cell module, a plurality of solar cells may be placed on the first transparent substrate.

As shown in FIG. 4, an example of the integrated building-type solar cell module 1 according to the present invention may include a plurality of solar cells 10 disposed on a first transparent substrate 100.

A large-area integrated solar cell module 1 is usually distributed in the market with a size of 1.1 × 1.3 ㎡, 1.1 × 1.4 ㎡, and 2.2 × 2.6 ㎡, and a building integrated solar cell with 1.1 × 1.3 ㎡ and 1.1 × 1.4 ㎡ The module 1 may comprise more than 100 solar cells 10.

Here, the region S1 on which the plurality of solar cells 10 are not disposed among the portions on the first transparent substrate 100 can be defined as an ineffective region that does not cause photoelectric conversion, and an edge deletion region ), And the region S2 in which the plurality of solar cells 10 are arranged may be defined as an effective region substantially causing photoelectric conversion.

The plurality of solar cells 10 may be divided into a plurality of first direction scribing patterns SL1 formed in the first direction Y. [

Here, each of the plurality of solar cells 10 may have a solar cell structure. 5, each of the plurality of solar cells 10 placed in contact with the first transparent substrate 100 includes a first electrode 110, a photoelectric conversion unit PV, (140). In addition, although not shown in FIG. 5, an intermediate reflective layer (not shown) and a rear reflective layer (not shown) may be further included.

5, the first electrode 110 and the second electrode 140 of the solar cell 10 adjacent to each other may be in contact with each other and electrically connected in series with each other. have.

Outermost cells 10 located at the outermost outermost cells of the plurality of solar cells 10 may be electrically connected to the junction box 70 as described above.

Here, the first electrode 110 may be disposed in contact with the rear surface of the first transparent substrate 100, and may include a material that is substantially transparent and electrically conductive to increase the transmittance of incident light.

For example, the first electrode 110 may be formed of indium tin oxide (ITO), tin oxide (SnO 2), or the like to provide high light transmittance and high electrical conductivity so that most of the light passes therethrough, (ZnO: B, BZO) containing zinc oxide (ZnO: Al, AZO), zinc oxide (ZnO: B, BZO) containing Ag, ZnO- or Ga2O3 or Al2O3, fluorine tin oxide And a mixture thereof. Preferably, the first electrode 110 may include zinc oxide (ZnO: Al, AZO) containing aluminum.

The first electrode 110 may be electrically connected to the photoelectric conversion unit PV. Accordingly, the first electrode 110 can collect and output one of the carriers generated by the incident light, for example, holes.

Although not shown in FIG. 5, a plurality of irregularities having a random pyramid structure may be formed on the upper surface of the first electrode 110. That is, the rear surface of the first electrode 110 may have a texturing surface. By texturing the surface of the first electrode 110 as described above, it is possible to reduce the reflection of incident light and increase the light absorption rate, thereby improving the efficiency of the solar cell 10.

The photoelectric conversion unit PV is located on the first electrode 110 and functions to produce electric power by light incident from the outside. Although not shown in FIG. 5, the photoelectric conversion portion PV includes a p-type semiconductor layer (not shown), an i-type (or intrinsic) semiconductor layer (not shown), and an n-type semiconductor layer (not shown) can do.

Such a photoelectric conversion unit PV can be formed by chemical vapor deposition (CVD) such as plasma enhanced chemical vapor deposition (PECVD).

The second electrode 140 may be disposed on the rear surface of the photoelectric conversion unit PV and may include a transparent electrically conductive material to improve the recovery efficiency of the power generated by the photoelectric conversion unit PV. For example, the second electrode 140 may include aluminum zinc oxide (ZnO: Al) or boron zinc oxide (ZnO: B). Preferably, the second electrode 140 may be formed of or comprising a boron zinc oxide (ZnO: B).

The second electrode 140 may be electrically connected to the photoelectric conversion unit PV to collect and output one of the carriers generated by the incident light, for example, electrons.

In this structure, when light is incident on the p-type semiconductor layer (PV-p), the p-type semiconductor layer (PV-p) having a relatively high doping concentration and the n-type semiconductor layer A depletion is formed by the layer (PV-n), whereby an electric field can be formed. At this time, the light incident from the outside is separated into electrons and holes in the i-type semiconductor layer (PV-i) and moved in different directions. For example, holes may move toward the first electrode 110 through the p-type semiconductor layer PV-p and electrons may move toward the second electrode 140 through the n-type semiconductor layer PV-n . Power can be produced in this way.

Here, the plurality of solar cells 10 according to the present invention may be divided into a plurality of first direction scribing patterns SL1 formed in the first direction Y, as described above.

The plurality of first directional scribing patterns SL1 may include lines P1, P2, and P3 formed in the first direction Y, respectively, as shown in FIG.

The P1 line formed in the first direction Y separates the first electrodes 110 included in each of the plurality of solar cells 10 and the P2 line formed in the first direction Y is divided into a plurality of solar cells 10, The solar cell module according to the present invention includes a plurality of photoelectric conversion parts PV included in each of the cells 10 and provides a passage through which the first electrode 110 and the second electrode 140 of the solar cell 10 adjacent to each other are connected in series, The P3 line formed in the first direction Y can distinguish the second electrode 140 included in each of the plurality of solar cell 10.

The plurality of first directional scribing patterns SL1 are formed in units of several tens of micrometers (μm) with relatively narrow widths of P1, P2, and P3 lines, and contribute little to the mining effect of the module, It can be hardly confirmed. Therefore, the appearance of the module may be hardly affected.

4, the plurality of solar cells 10 according to the present invention are formed in a second direction X intersecting with the first direction Y, 10 may not include a plurality of second directional scribing patterns SL2 for removing a portion of the photoelectric conversion portion PV included in each of the first directional scribing patterns SL1,

6, in the comparative example, the plurality of first directional scribing patterns SL1 in which the plurality of solar cells 10 are formed in the first direction Y and the plurality of first directional scribing patterns SL1 in the first direction Y And a plurality of second directional scribing patterns SL2 formed in a second direction X intersecting the second directional scribing patterns SL2.

Unlike the first directional scribing pattern SL1, the plurality of second directional scribing patterns SL2 are independent of the series connection structure of a plurality of solar cells, To secure the aperture ratio of the light emitting diode.

In other words, unlike the general solar cell module, the building-integrated solar cell module 1 is an important factor as well as a photoelectric conversion function and a mining function. At this time, in order to enhance the mining function of the solar cell module 1, And a plurality of second directional scribing patterns SL2 formed in the X direction.

6, the second directional scribing pattern SL2 is formed in such a manner that a part of the photoelectric conversion unit PV and the second electrode 140 included in each of the plurality of solar cells 10 And then patterned and removed.

However, the width of the second direction scribing pattern SL2 for enhancing the mining function is relatively larger than the width of the first direction scribing pattern SL1 so as to be visually confirmed, And the photoelectric conversion efficiency of the solar cell module can be relatively lowered due to the second direction scribing pattern SL2 having a relatively large width.

However, the building integrated solar cell module 1 according to the present invention does not include a plurality of second directional scribing patterns SL2 formed in the second direction X, different from that shown in Fig. 6, The outer appearance can be formed, and the photoelectric conversion efficiency of the solar cell module can be further increased.

The present invention is not limited to the above-described second direction scribing pattern SL2 but may include a semi-transmissive type in which light of 800 nm or less is absorbed by 70% or more and light of 800 nm to 1100 nm is transmitted by 70% In order to form the solar cell module 1 with a built-in building structure, the photoelectric conversion unit PV has a first photoelectric conversion layer (not shown) and a second photoelectric conversion layer (not shown) And the band gap of the second photoelectric conversion layer (not shown) can be controlled differently. More specifically, it is as follows.

FIG. 7 is a view for explaining a photoelectric conversion unit included in a plurality of solar cells in the solar cell module according to the present invention, and FIG. 8 is a graph showing the relationship between the germanium (Ge) content Fig.

7, in the plurality of solar cells 10 included in the building integrated solar cell module 1 according to the present invention, the photoelectric conversion unit PV is located on the rear surface of the first electrode 110 The first photoelectric conversion layer PV1 and the second photoelectric conversion layer PV2 located on the rear surface of the first photoelectric conversion layer PV1.

Here, the first photoelectric conversion layer PV1 and the second photoelectric conversion layer PV2 of the photoelectric conversion portion PV are formed of the p-type semiconductor layers PV1-p and PV2-p, the i-type (intrinsic) PV1-i, PV2-i, and n-type semiconductor layers PV1-n, PV2-n.

Here, the p-type semiconductor layers PV1-p and PV2-p may contain impurities of the first conductivity type in the silicon (Si), for example, p-type impurities such as impurities of the trivalent element, The semiconductor layers PV1-n and PV2-n are located on the p-type semiconductor layers PV1-p and PV2-p and are doped with impurities of the second conductivity type opposite to impurities of the first conductivity type, For example, an n-type impurity such as a pentavalent element.

The i-type semiconductor layers PV1-i and PV2-i may be located between the p-type semiconductor layers PV1-p and PV2-p and the n-type semiconductor layers PV1-n and PV2-n, respectively , Silicon (Si), and may contain no impurities of the above-described first and second conductivity types.

7, each of the first photoelectric conversion layer PV1 and the second photoelectric conversion layer PV2 of the photoelectric conversion portion PV has a pin structure from the incident surface of the first transparent substrate 100, that is, (I-type) semiconductor layers PV1-i and PV2-i and n-type semiconductor layers PV1-n and PV2-n are sequentially stacked Structure. Alternatively, however, it is also possible that each of the first photoelectric conversion layer PV1 and the second photoelectric conversion layer PV2 of the photoelectric conversion portion PV is formed of a structure such as n-i-p.

More specifically, the p-type semiconductor layers PV1-p and PV2-p are formed by using a gas containing an impurity of a trivalent element such as boron, gallium, or indium in a source gas containing silicon (Si) .

The n-type semiconductor layers PV1-n and PV2-n may be formed by using a gas containing an impurity of a pentavalent element such as phosphorus (P), arsenic (As), antimony (Sb) .

The intrinsic (i) semiconductor layer (PV-i) can reduce the recombination rate of carriers and absorb light. The i-type semiconductor layers PV1-i and PV2-i absorb the incident light and can generate carriers such as electrons and holes.

Here, the band gap energy Eg of the first photoelectric conversion layer PV1 is higher than the band gap energy Eg of the second photoelectric conversion layer PV2, and the first photoelectric conversion layer The band gap energy Eg of the second photoelectric conversion layer PV1 can be prevented from overlapping with the band gap energy Eg of the second photoelectric conversion layer PV2.

The reason why the band gap energy Eg of the first photoelectric conversion layer PV1 is not overlapped with the band gap energy Eg of the second photoelectric conversion layer PV2 is that when the band gap energy is overlapped, The absorption bands overlap and the output can be relatively lowered.

For this, the band gap energy Eg of the first photoelectric conversion layer PV1 is between 1.7 eV and 1.8 eV and the band gap energy Eg of the second photoelectric conversion layer PV2 is between 1.4 eV and 1.6 eV .

Here, the band gap energy Eg of the second photoelectric conversion layer PV2 is set to 1.4 eV or more in order to maximally transmit the light of the long wavelength band and maximize the light transmittance to the long wavelength band, The band gap energy Eg of the first photoelectric conversion layer PV2 is set to 1.6 eV or less in order to prevent the light absorption band from overlapping with the first photoelectric conversion layer PV1.

When the band gap energy of the first photoelectric conversion layer PV1 is set to be between 1.7 eV and 1.8 eV, most of the light of 300 nm to 600 nm in the wavelength band of 300 nm to 600 nm And the band gap energy Eg of the second photoelectric conversion layer PV2 is set to be between 1.4 eV and 1.6 eV, the light of the wavelength band of 500 nm to 800 nm in the wavelength band of 300 nm to 1100 nm It absorbs most of the light (more than 70%), and can transmit most (more than 70%) light in the long wavelength band of 800nm ~ 1100nm.

Accordingly, the solar cell module 1 according to the present invention can absorb 70% or more of light of 300 nm to 800 nm or less and transmit 70% or more of light of 800 nm to 1100 nm in incident light.

The first photoelectric conversion layer PV1 includes an amorphous silicon (a-Si) material and the second photoelectric conversion layer PV2 includes an amorphous silicon (a-SiGe) material containing germanium (Ge) can do.

Here, the reason why germanium (Ge) is contained in the second photoelectric conversion layer PV2 is to lower the band gap energy of the second photoelectric conversion layer PV2 including the amorphous silicon (a-Si) material.

8, when germanium (Ge) is contained in the second photoelectric conversion layer PV2 including the amorphous silicon (a-Si) material, the second photoelectric conversion layer PV2 ) Of the band gap energy of the GaAs layer is changed.

That is, it is confirmed that when the content of germanium (Ge) increases, the band gap energy decreases, and when the content of germanium (Ge) decreases, the band gap energy increases.

When the content of germanium (Ge) of the second photoelectric conversion layer PV2 is set to 10 at% (atomic weight percentage) to 53 at%, the band gap energy Eg of the second photoelectric conversion layer PV2 ) Can be formed between 1.4 eV and 1.6 eV.

In addition, the intermediate reflection layer 150a may be further included between the first photoelectric conversion layer PV1 and the second photoelectric conversion layer PV2 in the integrated building solar cell module 1 according to the present invention.

The intermediate reflective layer 150a may be formed of microcrystalline silicon (μc-SiOx) containing oxygen (O), and the intermediate reflective layer 150a may be formed of the first photoelectric conversion layer PV1, The first photoelectric conversion layer PV1 is allowed to reflect light of a short wavelength band not absorbed by the first photoelectric conversion layer PV1 and to be reabsorbed by the first photoelectric conversion layer PV1 The light can be trapped.

The integrated solar cell module 1 according to the present invention may further include a layer of microcrystalline silicon (SiO 2) containing oxygen O between the second photoelectric conversion layer PV 2 and the second electrode 140 of the photoelectric conversion portion PV. lt; RTI ID = 0.0 > μc-SiOx) < / RTI >

The rear reflective layer 150b may be formed by ohmic contact between the second photoelectric conversion layer PV2 and the second electrode 140 of the photoelectric conversion portion PV, And may trap the light so that the second photoelectric conversion layer PV2 can absorb light by reflecting the light in the middle wavelength region not absorbed.

As described above, the solar module module 1 according to the present invention can absorb 70% or more light of 800 nm or less in the incident light without including the second directional scribing pattern SL2, It is possible to make the appearance of the module more convenient while optimizing the mining function as well as the photoelectric conversion function of the module.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, Of the right.

Claims (10)

A first transparent substrate and a second transparent substrate facing each other; And
A first electrode located on a rear surface of the first transparent substrate;
A second electrode located on a front surface of the second transparent substrate;
And a plurality of solar cells positioned between the first electrode and the second electrode,
Each of the plurality of solar cells
And a photoelectric conversion portion located between the first electrode and the second electrode and including at least one p-type semiconductor layer, an i-type (intrinsic) semiconductor layer, and an n-type semiconductor layer,
In the plurality of solar cells, the photoelectric conversion unit
A first photoelectric conversion layer disposed on a rear surface of the first electrode, and a second photoelectric conversion layer between the first photoelectric conversion layer and the second electrode, wherein the first photoelectric conversion layer and the second photoelectric conversion Further comprising an intermediate reflective layer between the layers, wherein the intermediate reflective layer comprises a microcrystalline silicon (μc-SiOx) material containing oxygen (O)
The plurality of solar cells
In the incident light, light of 300 nm to 800 nm is absorbed by 70% or more, light of 800 nm to 1100 nm is transmitted by 70% or more,
The band gap energy Eg of the first photoelectric conversion layer is between 1.7 eV and 1.8 eV,
And the band gap energy (Eg) of the second photoelectric conversion layer is between 1.4 eV and 1.6 eV.
delete The method according to claim 1,
Wherein the first electrode, the photoelectric conversion unit, and the second electrode included in each of the plurality of solar cells are divided by a plurality of first direction scribe patterns formed in a first direction,
Wherein each of the plurality of solar cells is formed in a second direction intersecting the first direction and includes a plurality of second directional scribing patterns for removing a portion of the photoelectric conversion unit included in each of the plurality of solar cells The solar cell module according to claim 1, The method according to claim 1,
Wherein the first photoelectric conversion layer comprises an amorphous silicon (a-Si) material and the second photoelectric conversion layer comprises an amorphous silicon (a-SiGe) material containing germanium (Ge). 5. The method of claim 4,
The band gap energy Eg of the first photoelectric conversion layer is higher than the band gap energy Eg of the second photoelectric conversion layer and the band gap energy Eg of the first photoelectric conversion layer is higher than the band gap energy Eg of the second photoelectric conversion layer, Integrated solar cell module that does not overlap the band gap energy (Eg). delete delete The method according to claim 1,
And the content of germanium (Ge) in the second photoelectric conversion layer is between 10 at% (atomic percent) and 53 at%. The method according to claim 1,
The building integrated solar cell module
And a junction box electrically connected to both outermost cells of the plurality of solar cells,
Wherein the junction box is located at the edge of a rear surface region of the second transparent substrate. The method according to claim 1,
Wherein the second electrode comprises a transparent electrically conductive material.

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