KR101921139B1 - Ion beam generating apparatus - Google Patents

Abstract

There is provided an ion beam generator comprising: an inner magnet portion in which a plurality of inner magnets are arranged along an inner periphery of a closed loop such that a space for forming a magnetic field is formed in a closed loop shape; An outer magnet portion in which a plurality of outer magnets are arranged along an outer periphery of the closed loop so that a magnetic field is formed in the magnetic field forming space between the inner magnet portion and the inner magnet portion; And a plasma electrode portion for forming an electric field between the inner magnet portion and the outer magnet portion, wherein the outer magnet and the inner magnet are arranged such that a direction in which the one-end magnetic pole of the outer magnet faces, The extension lines of each of the directions in which the stimulation is directed are mutually intersected.

Description

[0001] ION BEAM GENERATING APPARATUS [0002]

The present invention relates to an ion beam generator, and more particularly, to an ion beam generator suitable for a process requiring high plasma energy.

Initially, the ion gun was developed as a means to change the direction and maintain the orbit by creating momentum such as satellite in space. Thereafter, the ion gun has been used in various vacuum equipment and vapor deposition equipment for various purposes such as pretreatment, etching, ion gun sputtering and the like.

The types of ion guns can be classified into Kaufman type and end hole type according to the acceleration method. Among them, Kaufman type can be used for surface etching and surface modification treatment by using low ion density high ion energy. In the end-hole type, electrons are generated using a magnetic field and an electric field to form a closed drift loop at a high speed. The thus charged electrons are charged at a high rate to ionize the incoming gas. It is accelerated by the repulsive force and the attracting force of the negative electrode and supplied to the ion source having energy. It can be used in the fields of pretreatment of the sample and cleaning of the large area by using high ion density and low energy.

In addition, conventionally, due to the deformation of the ion gun used in the conventional diffusion mode, in the arrangement of the permanent magnet responsible for the generation of the magnetic field, one permanent magnet shunts the magnetic field Device) to act as two poles has been used mainly. In addition, conventionally, a method of using two permanent magnets arranged on the plane by N and S poles using a magnet holder was used.

For example, techniques for ion guns are disclosed in Korean Patent Registration No. 10-1667642 and Korean Patent Registration No. 10-1557341.

However, according to Korean Patent Registration No. 10-1667642, the surface of the plasma generating electrode is provided horizontally with the coating body and is directed to the coating body. Thus, the efficiency with which the plasma contributes to the process can be improved However, the precursor, which is a coating material of the chemical vapor deposition process, may cause contamination of the plasma generating electrode.

According to the Korean Patent Publication No. 10-1557341, the plasma generating electrode is provided perpendicularly to the direction in which the coating material is disposed without being directed toward the coating material from below the coating material. According to this, The possibility of the contamination of the plasma generating electrode due to the inflow of the plasma can be reduced, but the efficiency with which the plasma contributes to the process is inevitably low.

SUMMARY OF THE INVENTION It is an object of the present invention to provide an ion beam generator capable of minimizing contamination of a plasma generating electrode while improving process contribution of the plasma.

As a technical means for achieving the above technical object, an ion beam generator according to an embodiment of the present invention includes a plurality of inner magnets arranged along an inner circumference of a closed loop such that a space for forming a magnetic field is formed in a closed loop shape Insider stone; An outer magnet portion in which a plurality of outer magnets are arranged along an outer periphery of the closed loop so that a magnetic field is formed in the magnetic field forming space between the inner magnet portion and the inner magnet portion; And a plasma electrode portion for forming an electric field between the inner magnet portion and the outer magnet portion, wherein the outer magnet and the inner magnet are arranged such that a direction in which the one-end magnetic pole of the outer magnet faces, The extension lines of each of the directions in which the stimulation is directed can be arranged to cross each other.

The above-described task solution is merely exemplary and should not be construed as limiting the present disclosure. In addition to the exemplary embodiments described above, there may be additional embodiments in the drawings and the detailed description of the invention.

According to the present invention, the inner magnet and the outer magnet are arranged such that the extending direction of the direction of the one-end magnetic pole of the inner magnet and the extending direction of the one-end magnetic pole of the outer magnet cross each other, The interval between the magnetic poles of the permanent magnets can be reduced so that the intensity of the magnetic force can be improved without using a magnetic pole cap or a shunt which induces the concentration of the magnetic force to the N pole and the S pole of one permanent magnet. As a result, the plasma ionization density can be increased even at low voltages, thereby improving the process contribution of the plasma and enabling a low-voltage-high current process.

1 is a schematic conception diagram of an ion beam generator according to an embodiment of the present invention.
FIGS. 2 and 3 illustrate an ion beam generator according to an embodiment of the present invention in which the inner magnet is arranged along the inner circumference of the closed loop according to various embodiments, and the inner magnet portion and the outer magnet portion are viewed from above It is a schematic conceptual diagram of the reporting map.
4 is a schematic diagram for explaining an example in which the ion beam generator according to the embodiment of the present invention is applied to a vapor deposition apparatus.
Each of Figs. 5 to 7 is an ion beam generator according to an embodiment of the present invention, wherein the angle formed by the direction of one end magnetic pole of the outer magnet and the direction of one end magnetic pole of the inner magnet is 90 deg., 45 deg., And 135 deg. Is a schematic conceptual diagram showing an example in which
FIG. 8 is a graph exemplarily showing the difference in efficiency between pulsed direct current (DC) and alternating current (AC).
FIG. 9 is a schematic conceptual view for explaining a discharge line for a foreign substance such as a process by-product in the ion beam generator according to an embodiment of the present invention, and is a schematic diagram showing an example in which the present ion beam generator is vertically arranged .
10 is an enlarged view of FIG. 9A.
11 is a schematic perspective view for explaining a discharge line of an ion beam generator according to an embodiment of the present invention;
12 is a schematic diagram for explaining a gas manifold of an ion beam generator according to an embodiment of the present invention.
13 is an enlarged view of B in Fig.
FIG. 14 is a schematic diagram for explaining a magnet focus guide unit of an ion beam generator according to an embodiment of the present invention; FIG.
15 to 17 are schematic conceptual diagrams for explaining that the inner magnet is provided as an independent shunt in the ion beam generator according to the embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art can easily carry out the present invention. It should be understood, however, that the present invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. In the drawings, the same reference numbers are used throughout the specification to refer to the same or like parts.

Throughout this specification, when a part is referred to as being "connected" to another part, it is not limited to a case where it is "directly connected" but also includes the case where it is "electrically connected" do.

It will be appreciated that throughout the specification it will be understood that when a member is located on another member "top", "top", "under", "bottom" But also the case where there is another member between the two members as well as the case where they are in contact with each other.

Throughout this specification, when an element is referred to as " including " an element, it is understood that the element may include other elements as well, without departing from the other elements unless specifically stated otherwise.

In the description of the embodiments of the present invention, terms relating to directions and positions (front, back, and the like) are set in the direction in which the coating material is arranged, that is, the direction in which the ion beam is irradiated. Although the coating material is not shown in the drawing, for example, when viewed from Figs. 1 and 4 to 7, the 12 o'clock direction may be generally forward, and the 6 o'clock direction may be rearward. 9 and 10, the 9 o'clock direction may be generally forward, and the 3 o'clock direction generally may be rearward.

The present invention relates to an ion beam generator.

Hereinafter, an ion beam generator (hereinafter referred to as a "present ion beam generator") according to an embodiment of the present invention will be described.

FIG. 1 is a schematic conceptual view of the present ion beam generating apparatus. FIG. 2 and FIG. 3 are views for explaining that in the present ion beam generating apparatus, the inner magnets are arranged along the inner circumference of the closed loop according to various embodiments. FIG. 8 is a schematic view showing the inner magnet portion and the outer magnet portion of the ion beam generator viewed from above; FIG.

Referring to Fig. 1, the present ion beam generating apparatus includes an insulator part 1. Referring to FIG. 2, the inner magnet portion 1 includes a plurality of inner magnets 11. A plurality of inner magnets 11 are arranged along the inner circumference of the closed loop so that the magnetic field forming space is formed in a closed loop shape. 2 and 3, the fact that the inner magnet 11 is arranged along the circumference of the closed loop means that the inner magnet 11 is arranged in a closed loop shape having two rows in part, (See Fig. 2) or the inner magnet 11 is arranged in one row to form the inner circumference of the closed loop (see Fig. 3).

1 and 2, the present ion beam generating apparatus includes an external magnet portion 2. [ 1 to 3, the outer magnet portion 2 includes a plurality of outer magnets 21 arranged along the outer circumference of the closed loop so as to form a magnetic field in the magnetic field forming space between the outer magnet portion 2 and the inner magnet portion 1 .

1, a magnetic pole 211 at one end of the outer magnet 21 and a magnetic pole 111 at one end of the inner magnet 11 are connected to each other to form a magnetic field between the outer magnet 21 and the inner magnet 11, The polarity can be reversed. Illustratively, referring to FIG. 1, the outer magnet 21 may have the S pole at one end and the N pole at the other end. In this case, the inner magnet 11 may have the N poles at one end and the S pole at the other end. Illustratively, each of the outer magnet 21 and the inner magnet 11 may be a permanent magnet.

For reference, referring to FIGS. 2 and 3, the closed loop may be in the form of a track, but is not limited thereto. As another example, the closed loop may be a closed curved loop shape such as a circle, an ellipse, or the like, or a rectangular loop shape.

Plasma ions and plasma electrons can be generated between the inner magnetizing portion 1 and the outer magnet portion 2 (the magnetic field forming space) as will be described below. The inner magnetization portion 1 and the outer magnet portion 2 can increase the ionization rate of gas by collecting and accelerating electrons through coupling with the electric field formed by the plasma electrode portion 3. [

1, the present ion beam generator includes a plasma electrode portion 3 for forming an electric field between an inner magnetizing portion 1 and an outer magnet portion 2. As shown in Fig. It is possible to supply a high voltage to the plasma electrode portion 3 and effectively ionize the process gas with the help of the magnetic fields of the outer magnet portion 2 and the inner magnet portion 1. Accordingly, the inner magnet 11 and the outer magnet 21 impart rotational energy to the primary electrons, so that plasma ions and plasma electrons can be generated while increasing the ionization rate of the process gas existing in the closed loop. Among them, the positive charge including the plasma ion is repelled forward (ion beam irradiation) by the electric field formed by the plasma electrode part 3, and the negative charge including the plasma electron is repelled by the action of the Lorentz force, Speed cyclotron movement. By the high rotational motion of such plasma electrons, the process gas in the closed loop can be ionized to a high density.

That is, electrons are trapped by the magnetic field generated by the inner magnet portion 1 and the outer magnet portion 2 and the electric field generated by the plasma electrode portion 3, so that the process gas can be ionized, Plasma ions and plasma electrons can be generated between the outer magnet portions 2.

In other words, according to the present ion beam irradiating apparatus, plasma electrons generated by the potential of a power source supplied from the outside ionize the process gas while moving the closed loop at a high speed, and ionized positive charges are generated in the plasma electrode section 3 And is irradiated forward (ion beam irradiation) by a repulsive force.

When the present ion beam irradiating apparatus is applied to a vapor deposition apparatus, the present ion beam irradiating apparatus can act as follows.

4 is a schematic diagram for explaining an example in which the present ion beam irradiating apparatus is applied to a vapor deposition apparatus.

Referring to FIG. 4, when the present ion beam irradiating apparatus is applied to a vapor deposition apparatus, a process gas (for example, O ₂ , N ₂ , Ar, C, N ₂ O, CH _4, and the like) may be supplied to the plasma electrode unit 3. When the process gas is supplied, AC or pulsed plasma DC may be applied to the plasma electrode unit 3 to form plasma. In addition, the precursor (HMDSO, TMDSO, TiCl4, TMA, TTIP, etc.) can be supplied via the precursor delivery device 4, and when the precursor is supplied, the precursor can dissociate, And may be deposited on the coated body in the form of a thin film. At this time, alternating current or pulse direct current alternates + and - to the plasma electrode unit 3 on both sides with respect to the precursor supplying device 4, and alternating current and repulsive force are applied alternately according to the polarity change, The electrons contribute to the reaction while passing through the part where chemical vapor deposition occurs. At this time, the density of the ions contributing to the deposition varies depending on the plasma density, the site of generation, and the alternation direction, and thus, a phenomenon such as a change in the composition of the thin film and the presence of undissolved residues occurs. For reference, it is preferable that pulsed direct current is supplied to the plasma electrode portion 3 as will be described later.

5 shows that the ion beam generator according to the present embodiment is configured such that the angle θ formed by the direction of the one end magnetic pole 211 of the outer magnet 21 and the direction of the one end magnetic pole 111 of the inner magnet 11 is 90 ° 6 is a schematic conceptual diagram showing an example in which the direction in which the one end magnetic pole 211 of the outer magnet 21 is directed and the direction in which the one end magnetic pole 111 of the inner magnet 11 is oriented 7 is a schematic view showing an example in which the direction in which the magnetic pole 211 at one end of the outer magnet 21 faces and the direction in which the magnetic pole 211 of the inner magnet 11 Is an outline conceptual diagram showing an example in which the angle [theta] formed by the direction in which the magnetic poles 111 are oriented is 135 [deg.].

The outer magnet 21 and the inner magnet 11 are magnetized in the direction in which the one end magnetic pole 211 (the center of the magnetic pole once) of the outer magnet 21 faces and the one end magnetic pole 111 The centers of the magnetic poles) are arranged so as to cross each other.

Here, the mutual intersection of the extension lines means that the two extension lines are not juxtaposed, and that they extend so as not to overlap each other on the same line, so that an intersection occurs. 5 to 7, the inner magnet 11 and the outer magnet 21 are arranged in the direction in which the one end magnetic pole 211 of the outer magnet 21 faces (the one end magnetic pole 211 of the outer magnet 21 Of the inner magnet 11 and the direction of the one end magnetic pole 111 of the inner magnet 11 (the extension line of the direction in which the one end magnetic pole 111 of the inner magnet 11 faces) Lt; RTI ID = 0.0 > 180. ≪ / RTI > Preferably, the angle? Between the direction of the one end magnetic pole 211 of the outer magnet 21 and the direction of the one end magnetic pole 111 of the inner magnet 11 may be 45 to 135 degrees .

Accordingly, the density of the magnetic field lines between the outer magnet 21 and the inner magnet 11 of the present ion beam generator can be increased, and the intensity of the magnetic field can be improved.

)에 의하면 자기력의 크기는 두 개의 자석 각각의 자극의 세기의 곱에 비례하고 두 개의 자석 각각의 자극간의 거리의 제곱에 반비례하게 되어 있다.Coulomb's Law

), The magnitude of the magnetic force is proportional to the product of the intensity of the stimulus of each of the two magnets and is inversely proportional to the square of the distance between the stimuli of the two magnets.

This means that when the linear distance of the magnetic poles of each of the two magnets is reduced to 1/2, the intensity of the magnetic field becomes four times stronger, and when the magnetic poles of the two magnets face each other, It can mean that it is stronger.

In this ion beam generator, the inner magnet 11 and the outer magnet 21 are disposed at the ends of the magnetic field shield, and the direction of the one-end magnetic pole 211 of the outer magnet 21 and the direction of the inner magnet 11 are arranged in such a manner that extension lines of respective magnetic poles 111 are arranged so as to intersect with each other so that magnetic pole caps and shunts for inducing the concentration of magnetic force to the north and south poles of one permanent magnet The distance (distance) between the one-end magnetic pole 211 of the outer magnet 21 and the one-end magnetic pole 111 of the inner magnet 11 can be greatly reduced without using the outer magnet 21, have.

As described above, according to the ion beam generator of the present invention, since the strength of the magnetic field is improved, a process of a low-voltage high current is possible.

Generally, in the case of the plasma-assisted chemical vapor deposition method, when the plasma ionization density is low or the plasma energy application is low, the refractive index, which is the intrinsic index of the thin film, may be lowered or the density and hardness of the thin film may be lowered.

Therefore, in order to increase the plasma ionization density, the plasma ionization density needs to be increased. In order to increase the plasma ionization density, there is no way to increase the amount of current by increasing the power. In this case, May require high-voltage specifications. However, the general specification of the power supply which is most commonly used to increase the plasma ionization density is the maximum of 800V, and the specification of the power supply should be made on special order. Conventionally, a high current-to-high voltage process was required to increase the plasma ionization density, and a special order power supply was required for the high current-high voltage process.

As described above, according to the present ion beam generator, the extension line of the direction in which the one end magnetic pole 211 of the outer magnet 21 faces and the direction in which the one end magnetic pole 111 of the inner magnet 11 faces, By being disposed in an intersecting manner, the intensity of the magnetic field is improved, so that a high current process can be performed even at a low voltage.

For example, in general, if the magnetic field strength is weak, the plasma is formed at a voltage of 700 to 800 volts, and in some cases, the plasma may not be generated beyond the ignition voltage initially supplied by the power supply. In this case, a current of 12.5 A flows when 10 kW is applied. On the other hand, according to the present ion beam generator, since the intensity of the magnetic field is increased, the intensity of the voltage for plasma formation can be lowered to 400 volts, and the plasma density can be increased by applying a current of 25 A when 10 kW is applied.

As described above, the ion beam generator of the present invention is an improvement of the conventional ion gun (ion beam generator), and it compensates for the disadvantages of the conventional ion gun operating at a high voltage of not less than 1500V and a low power of not more than 3A, A high-power process is possible, and a plasma density higher than that of a conventional ion gun can be realized.

FIG. 8 is a graph illustrating an exemplary difference in efficiency between direct current (DC) and alternating current (AC).

The present ion beam generating apparatus can use a bipolar pulse direct current (DC). Generally, the power of the plasma assisted chemical vapor deposition method is to use alternating current (AC). Referring to FIG. 8, it can be seen that the supply of + and - is higher than that of sine wave, and the supply of + and - is higher than that of rectangle. Based on this point, the present ion beam generating apparatus can increase the ionization density by using a bipolar pulse direct current.

Unlike conventional ion beam sources such as pretreatment, surface etching, etc., the present ion beam generator can be effectively used for plasma assisted chemical vapor deposition, which is a field where high plasma density and high power ion gun are applied. That is, the present ion beam generating apparatus can be effectively applied to a field (object) in which a high ionization rate needs to be realized and a field (object) in which a high vapor deposition energy is required to be supplied.

For example, there are a melt evaporation method, an electron beam evaporation method, a vacuum sputtering method, an arc evaporation method, a chemical vapor deposition method, and the like as a method of forming a metal and a non-metal thin film in a vacuum state. Vacuum sputtering method, arc vapor deposition method, chemical vapor deposition method, and the like. In addition, there is a technology for progressing to a continuous process by using chemical vapor deposition using an ion beam plasma instead of ICP and CCP type among industrial chemical vapor deposition methods recently. The present ion beam generating apparatus is applied to chemical vapor deposition using ion beam plasma .

Also, if the ionization density is higher, such as plasma-assisted chemical vapor deposition, the process may be advantageous if the process voltage is lower and the amount of the current depending on the plasma density is higher at the same power. Accordingly, when the present ion beam generator is applied to the plasma assisted chemical vapor deposition, the process can be more advantageous.

Referring to FIG. 1, the plasma electrode unit 3 may be provided behind the magnetic field forming space. In addition, the plasma electrode portion 3 can be formed obliquely with respect to the front (the direction in which the coated body is placed, that is, the direction in which the ion beam is irradiated) such that the electrode surface 31 faces the magnetic field forming space. Illustratively, the angle formed by the plane forming direction of the electrode surface 31 with the forward direction may be 10 degrees or more and 80 degrees or less. Preferably, the angle formed by the plane forming direction of the electrode surface 31 and the forward direction may be 15 to 75 degrees. Accordingly, the electrode surface 31 can be approximately parallel to at least a part of the forming direction of the magnetic field. Particularly, when the angle formed by the plane forming direction of the electrode surface 31 and the forward direction is 45 degrees, the electrode surface 31 can be formed more parallel to at least a part of the direction of the line of magnetic force forming.

As described above, the electrode surface 21 is formed obliquely with respect to the front side, so that contamination of the plasma electrode portion 3 can be reduced.

In the case of the conventional ion gun mentioned in the background of the present invention, since the surface of the plasma generating electrode is horizontally provided with the coating body and is directed to the coating body, contamination of the plasma generating electrode may be caused by the precursor which is a coating material . Further, in the case of other conventional ion guns mentioned in the Background of the Invention, since the plasma generating electrode is provided perpendicularly to the direction in which the coating material is disposed without being directed to the coating material from below the coating material, The efficiency was low.

On the other hand, according to the present ion beam generator, since the electrode surface 31 of the plasma electrode portion 3 is formed obliquely with respect to the direction in which the coating material is placed (direction in which the ion beam is irradiated) The inflow into the plasma electrode portion 3 can be reduced, and the possibility of contamination of the plasma electrode portion 3 can be reduced. Since the ion beam generator according to the present embodiment is arranged such that the extending direction of the one end magnetic pole 211 of the external magnet 21 and the extending direction of the one end magnetic pole 111 of the internal magnet 11 cross each other, The density of the lines of magnetic force between the magnets 21 and the inner magnet 11 can be much higher than before and the efficiency of the contribution of the plasma to the process can be improved by improving the strength of the magnetic field.

That is, in the present ion beam generator, the arrangement of the inner magnet 11 and the outer magnet 21 is three-dimensionally formed so as to form an intersection on an extension line in a direction in which the magnetic poles of the inner magnet 11 and the outer magnet 21 are viewed, At the same time, the electrode surface 31 of the plasma electrode part 3 can be formed obliquely to have a predetermined angle with respect to the front direction, thereby reducing the possibility of contamination of the plasma electrode part 3, - Ion beam generator capable of high current process.

Such a typical ion beam generator may have high suitability for processes requiring high plasma energy (such as a vacuum coating process).

For reference, the plasma electrode part 3 may include a plasma electrode part cooling channel 39.

Further, according to the ion beam generator of the present invention, a cooling channel forming space for each of the inner magnet portion 1 and the outer magnet portion 2 can be ensured. For example, referring to Fig. 1, when the inner magnets 11 are arranged in a closed loop form, an inner magnet cooling channel 19 may be provided between the inner magnets 11 arranged in two rows. The outer magnet cooling channel 29 may be provided on the front side of the outer magnet 21 (12 o'clock direction in FIG. 1). The inner magnet 11 and the outer magnet 21 are protected from the heat of high density and high energy due to the application of the high current by the cooling channels 19 and 29 for the inner magnet portion 1 and the outer magnet portion 2 respectively . Thus, demagnetization of the inner magnet 11 and the outer magnet 21 can be prevented from the heat generated by the plasma energy by the inner magnet cooling channel 19 and the outer magnet cooling channel 29. [ For reference, the cooling channels 19 and 29 can supply cooling water to the inner magnet portion 1 and the outer magnet portion 2. To this end, a cooling water supply line may be connected to the cooling channels 19, 29.

In addition, the present ion beam generator may include a plasma guide 7. 1 and 11 together, the plasma guide 7 is disposed between the inner magnets 11 of the inner magnetizing portion 1 formed in a closed loop shape, that is, along the inner side of the closed loop of the inner magnet 11 And may be provided so as to protrude forward. The plasma guide 7 serves as a guide for movement of electrons traveling in mutually opposite directions while rotating in the direction of the magnetic field. In addition, the plasma guide 7 improves the acceleration of the alternating plasma ions according to the change of the electric field, Can play a role.

9 is a schematic conceptual view for explaining a discharge line for foreign substances such as process by-products in the present ion beam generator, and is a schematic conceptual view showing an example in which the present ion beam generator is vertically arranged. Fig. 11 is a schematic perspective view for explaining a discharge line of the present ion beam generator. Fig.

9 to 11, a discharge line 5 may be formed between the outer magnet portion 2 and the plasma electrode portion 3. [ Illustratively, the discharge line 5 may be formed in a direction orthogonal to the forward direction (the 9 o'clock direction in Figs. 9 and 10). Through this discharge line (5), foreign substances including processing by-products can be drained. The by-products may cause deformation of the plasma electrode part 3, cause of arc generation, uneven wear of the plasma electrode part 3, defective product, etc. In particular, the metallic by-product may act as a cause of dielectric breakdown, . The present ion beam generating apparatus includes a discharge line (5) through which foreign matter is drained, so that the occurrence of the above problems can be minimized.

9, when the present ion beam generating apparatus is disposed upright in the vertical direction (such that the front is directed to the horizontal direction) (for example, when applied to a vertical type CVD process), the discharge line 5 Is preferably formed in a shape extending to the bottom where the by-products can gather (a 6 o'clock direction orthogonal to the front toward 9 o'clock 9 in Fig. 9). For example, the discharge line 5 may be formed to extend downwardly between the outer magnet portion 2 and the plasma electrode portion 3. However, the specification, position, etc. of the discharge line 5 can be set such that the influence on the magnetic field is minimized and leakage of the plasma does not occur.

Fig. 12 is a schematic conceptual view for explaining the gas manifold of the present ion beam generator, and Fig. 13 is an enlarged view of Fig. 12B.

12, the present ion beam generator may include a gas manifold 6 for supplying gas onto the electrode surface 31 of the plasma electrode part 3. [ 12 and 13, the gas manifold 6 may include a gas inflow line 61 for supplying gas. The gas may be a flushing gas (gas).

Illustratively, the gas manifold 6 can supply a flushing gas for a predetermined time so that flushing of the foreign matter (byproducts) on the electrode surface 31 of the plasma electrode portion 3 is made. The flushing gas may be a non-reactive gas, for example, N ₂ .

In the case of the horizontal type CVD process in which the coating process is performed horizontally, a foreign substance such as a process by-product can be scattered on the plasma electrode unit 3. In order to remove such foreign matter, the gas manifold 6 can supply gas for flushing onto the electrode surface 31. Particularly, in the plasma electrode unit 3 disposed in the vacuum chamber, static electricity is not generated, so that foreign matter may be separated from the electrode surface 31 when a slight external force is applied. The present ion beam generator can easily remove foreign matter from the electrode surface 31 by supplying flushing gas thereto.

13, a gas inflow line 61 may be formed between the inner stone portion 1 and the plasma electrode portion 3. [ That is, in the present ion beam generating apparatus, the gas inflow line 61 is formed between the inner stone portion 1 and the plasma electrode portion 3, thereby blowing gas at a position close to the plasma electrode portion 3, Foreign matter can be removed.

13, the present ion beam generating apparatus includes a gas flow path for directing a flow of gas discharged from a front end (a reference 9 o'clock direction end of Fig. 13) of the gas inflow line 61 to the plasma electrode section 3 And an induction member (8). Since the gas flow guide member 8 physically guides the flow of the gas but should not influence the magnetic field, it is preferable that the gas flow guide member 8 is made of a material which is not magnetic. 13, the gas flow guiding member 8 may be positioned adjacent to the inner end (on the side of the inner magnet 11) with respect to the front end of the gas inflow line 61. As shown in Fig. In addition, the gas flow guide member 8 is provided to prevent the flow of gas discharged from the front end of the gas inflow line 61 from being directed to the inside (reference 12 o'clock direction in Fig. 13) 6 o'clock direction). The gas flow inducing member 8 is arranged so that at least a part of its outer surface is directed obliquely toward the electrode surface 31 so as to guide the flow of the gas discharged from the front end of the gas inflow line 61 toward the electrode surface 31 And can be bent. Further, the gas flow guide member 8 may be provided in a closed loop shape formed along the inside of the magnetic field space on the front side of the inner stone portion 1. The gas flow induced by the gas flow guide member 8 toward the electrode surface 31 can be discharged through the discharge surface 5 through the electrode surface 31. At this time, the gas may be a flushing gas (gas).

Further, the gas manifold 6 can selectively supply the process gas and the flushing gas through valve control.

Referring to FIG. 12, for example, the gas manifold 6 may open the GV1 and GV2 during the plasma process and supply the gas through the process gas MFC, thereby allowing the deposition process to proceed. When flushing to the plasma electrode portion 3 is required due to contamination by particles or the like, the gas manifold 6 locks GV1 and GV2, opens NV2 to fill a certain amount of flushing gas into the flushing gas tank, and closes NV2 have. Then, when the gas manifold 6 opens the NV1, the flushing gas can be introduced into the vacuum chamber (inside of the present ion beam generator) at a very high speed by the difference between the vacuum and the pressure of the flushing gas. As described above, since the gas inflow line 61 is located close to the plasma electrode unit 3, the foreign substance can be flushed throughout the plasma electrode unit 3.

Further, the flushed foreign matter may flow into the discharge line and be discharged to the outside. The discharge line through which the flushed foreign matter is discharged may be a discharge line 5 formed between the external magnet portion 2 and the plasma electrode portion 3 described above.

The gas inflow line 61 includes a branch line 5a extending along the rear surface (the surface at the reference 3 o'clock direction in Fig. 13) and the outer surface (the surface at the reference 6 o'clock direction in Fig. 13) of the plasma electrode portion 3, Lt; / RTI > This branch line 5a is arranged so that the plasma electrode unit 3 is spaced apart from the shunt of the rear side (the reference 3 o'clock direction in Fig. 13) and the shunt thereof (the 6 o'clock direction in Fig. 13) As shown in FIG. Referring to Fig. 13, the branch line 5a branched from the gas inflow line 61 may be connected to the middle portion of the discharge line 5 described above. When the flushing gas flows into the gas inflow line 61, some of the introduced flushing gas is moved through the branch line 5a and then joined to the discharge line 5 . ≪ / RTI > Accordingly, foreign substances accumulating in the gap portion, which may be finely formed between the plasma electrode portion 3 and the shunt, can also be removed by flushing.

14 is a schematic diagram for explaining the magnet focus guide unit of the present ion beam generator.

14, the present ion beam generator includes a magnet focus guide portion 9 provided in at least one of the inner side of the inner side of the inner magnet 11 and the front side of the outer magnet 21 so as to reduce the dispersion of the magnetic field . The magnet focus guide portion 9 can reduce the dispersion of the magnetic field by shielding or bypassing the magnetic field. As described above, it is important that the distance between the outer magnet 21 and the inner magnet 11 is close to the strength of the magnetic field. In addition, it is necessary to prevent the dispersion of the magnetic force in order to strengthen the strength of the magnetic field at the same distance. The present ion beam generator includes the magnet focus guide portion 9 to prevent the dispersion of the magnetic force, . 2), the magnet focus guide portion 9 is disposed inside the closed loop formed by the inner magnet 11 and the inner magnet 11, for example, when the inner magnet portion 1 is provided in a closed- (In the direction of 12 o'clock in Fig. 14) than the magnetic pole 111 at one time. The magnet focus guide portion 9 provided in front of the external magnet 21 may be provided so as to protrude inwardly from the one end magnetic pole 211 of the external magnet 21 in front of the external magnet 21. Referring to FIG. 14, the magnet focus guide portion 9 may be provided to have a surface inclined obliquely toward the magnetic field forming space side. As a result, the strength of the magnetic field can be reduced. For example, at least one of Ni, Steel, SUS440, and the like may be included in the material of the magnet focus guide portion 9. The magnet focus guide portion 9 may be made of a ferromagnetic material.

15 to 17 are schematic conceptual diagrams for explaining that the inner magnet is provided as an independent shunt in the present ion beam generator.

Further, in the present ion beam generator, as shown in Fig. 15 to Fig. 17, it is preferable that the inner armature portion 1, which is in the form of a closed loop as shown in Fig. 2, The shunt is separated so that the two rows of the inner magnets 11 are arranged independently of each other, so that the strength of the magnetic force can be further increased. 15 to 17, a pair of inner magnets 11 and an outer magnet 21 that form a magnetic field therebetween are symmetrically disposed with the center of the closed loop therebetween. It may be more preferable that the magnet shunt be independently provided so that the inner magnet 11 and the outer magnet 21 and the shunt are not connected to each other.

In addition, conventionally, an ion gun has been disclosed in which an N pole (or S pole) is formed at the center portion using one magnet and an S pole (or N pole) is formed at the side portion through a shunt. However, according to the disclosed ion gun, when a hole or the like is machined in the shunt, magnetic force leakage occurs, and the strength of the magnetic force can be rapidly lowered. On the other hand, according to the present ion beam generator, since the inner magnet 11 and the outer magnet 21 each have the magnetic poles 111 and 211 and the other magnetic poles 112 and 212 at one time, (For example, even when the shunt on the inner magnetizing stone 11 side is separately and separately machined as shown in Figs. 15 to 17), the strength of the magnetic force may not be reduced.

It will be understood by those of ordinary skill in the art that the foregoing description of the embodiments is for illustrative purposes and that those skilled in the art can easily modify the invention without departing from the spirit or essential characteristics thereof. It is therefore to be understood that the above-described embodiments are illustrative in all aspects and not restrictive. For example, each component described as a single entity may be distributed and implemented, and components described as being distributed may also be implemented in a combined form.

The scope of the present invention is defined by the appended claims rather than the detailed description, and all changes or modifications derived from the meaning and scope of the claims and their equivalents should be construed as being included within the scope of the present invention.

1: insulator
11: Inner magnet
111: Once stimulated
112: Other stimulus
19: Inner magnet cooling channel
2: outer magnet portion
21: External magnet
211: Stimulus once
212: Other stimulus
29: External magnet cooling channel
3: Plasma electrode part
31: electrode face
39: Plasma electrode part cooling channel
4: Precision Feeder
5: Discharge line
5a: branch line
6: Gas Manifold
61: gas inflow line
7: Plasma guide
8: Gas flow inducing member
9: Magnet focus guide section

Claims (10)

In the ion beam generator,
An inner magnet portion in which a plurality of inner magnets are arranged in the form of a closed loop along the inner periphery of the closed loop so that the magnetic field forming space is formed in a closed loop shape;
An outer magnet portion in which a plurality of outer magnets are arranged along an outer periphery of the closed loop so that a magnetic field is formed in the magnetic field forming space between the inner magnet portion and the inner magnet portion;
A plasma electrode part forming an electric field between the inner magnet part and the outer magnet part and including a plasma electrode cooling channel;
A plasma guide protruding forward from a closed loop formed by the plurality of inner magnets along an inner side of a closed loop formed by the plurality of inner magnets;
An inner magnet cooling channel provided in a cooling channel forming space secured inside a closed loop formed by the plurality of inner magnets to prevent demagnetization of the inner magnet from heat generated by plasma energy; And
And an outer magnet cooling channel provided in a cooling channel forming space secured to the front side of the outer magnet so that the outer magnet is prevented from being demagnetized from heat generated by plasma energy,
Wherein the outer magnet and the inner magnet are disposed so that an extension line of a direction in which the one end magnetic pole of the outer magnet faces and an extension line of the one end magnetic pole of the inner magnet cross each other,
Wherein the plasma electrode portion is provided behind the magnetic field forming space and is formed obliquely to the front so that the electrode surface faces the magnetic field forming space. The method according to claim 1,
Wherein an angle formed between a direction in which the one-end magnetic pole of the outer magnet faces and a direction in which the one-end magnetic pole of the inner magnet faces is 45 ° to 135 °. delete delete The method according to claim 1,
And a discharge line is formed between the outer magnet portion and the plasma electrode portion. 6. The method of claim 5,
And the foreign matter including the by-product is drained through the discharge line. 6. The method of claim 5,
And a gas inlet line for supplying a gas onto the electrode surface of the plasma electrode portion,
Wherein the gas inlet line is formed between the inner magnet portion and the plasma electrode portion,
Wherein the gas is a gas for flushing. 8. The method of claim 7,
Wherein the gas manifold selectively supplies one of the process gas and the flushing gas via valve control. 8. The method of claim 7,
And a gas flow guide member for directing a flow of gas discharged from a front end of the gas inlet line to an electrode surface of the plasma electrode portion,
Wherein the gas flow inducing member is made of a non-magnetic material and is positioned adjacent to a front end of the gas inflow line inwardly, the flow of gas discharged from the front end of the gas inflow line toward the electrode surface Respectively,
And a gas flow-induced toward the electrode surface is discharged through the discharge line through the electrode surface. The method according to claim 1,
Further comprising a magnet focus guide portion provided on at least one of the front of the outer magnet and the inner side of the inner magnet so that the dispersion of the magnetic field is reduced.

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