KR101917516B1 - Rf sensor for adjusting singal output sensing and compensating phase difference - Google Patents

Abstract

Disclosed is an RF sensor which is capable of adjusting signal output sensitivity and compensating a phase difference between a current and a voltage. The RF sensor for detecting an RF signal flowing through an RF feedthrough includes a current sensor detecting the current in accordance with the RF signal, and a voltage sensor detecting the voltage in accordance with the RF signal. The current sensor and the voltage sensor are physically separated, and a distance from at least one between the current sensor and the voltage sensor to the RF feedthrough can be adjusted.

Description

TECHNICAL FIELD [0001] The present invention relates to an RF sensor capable of adjusting signal output sensitivity and phase difference correction,

The present invention relates to an RF sensor capable of adjusting the signal output sensitivity and correcting the phase difference.

Conventionally, the RF sensor includes a current sensor and a voltage sensor as one module. Therefore, it has been difficult to use it in a semiconductor system in which only one of the current sensor and the voltage sensor is used.

Also, since conventional RF sensors could not control the signal output sensitivity, different RF sensors had to be used if the desired frequency or power varied.

In addition, conventional RF sensors require additional structures because they are not directly installed for use in conventional semiconductor systems. However, the RF sensor of the present invention can be easily combined with an existing semiconductor system without additional structure.

KR 10-0465235 B

The present invention provides an RF sensor capable of adjusting the signal output sensitivity and correcting the phase difference between the current and the voltage.

According to an aspect of the present invention, there is provided an RF sensor for sensing an RF signal flowing through an RF feedthrough according to an embodiment of the present invention includes: a current sensor for sensing a current according to the RF signal; And a voltage sensor for sensing a voltage according to the RF signal. Here, the current sensor and the voltage sensor are physically separated, and the distance between at least one of the current sensor and the voltage sensor and the RF feedthrough is adjustable.

According to another embodiment of the present invention, an RF sensor for sensing an RF signal flowing through an RF feedthrough includes: a current sensor for sensing a current according to the RF signal; And a voltage sensor for sensing a voltage according to the RF signal. Wherein the current sensor and the voltage sensor are physically separated from each other, at least one of the current sensor and the voltage sensors is rotatable, and by rotating at least one of the current sensor and the voltage sensor, The phase difference between the current sensed by the voltage sensor and the voltage sensed by the voltage sensor can be corrected.

A holder structure according to an embodiment of the present invention includes a holder; And a sensor positioned within the holder and supported by the holder. Here, the holder is formed with means for adjusting the distance between the holder structure and the RF feedthrough through which the RF signal flows.

A holder structure according to another embodiment of the present invention includes a holder; And a sensor positioned within the holder and supported by the holder. Here, the holder is provided with a means for correcting a phase difference between a voltage or a current sensed by the sensor and a current or a voltage sensed by another sensor.

A current sensor according to an embodiment of the present invention includes a board on which a conductor loop is formed. Here, the loop has a pattern structure that can be adjusted in length by cutting a part of the loop.

A voltage sensor according to an embodiment of the present invention includes a board, a first capacitive element is formed on one surface of the board, and a plurality of second capacitive elements are formed on the other surface of the board. Here, the capacitive circuit area is adjusted by cutting off a part of the connection while the second capacitive elements are electrically connected to each other.

The RF sensor according to the present invention can adjust the signal sensing distance, adjust the loop length of the current sensor, or adjust the area of the capacitive circuit of the voltage sensor, so that the signal output sensitivity can be adjusted.

In addition, by rotating the current sensor or the voltage sensor, the phase difference between the current sensed by the current sensor and the voltage sensed by the voltage sensor can be corrected.

Furthermore, the RF sensor can be installed without changing the RF feedthrough of existing equipment, and thus does not require a connector for input and output of the RF sensor.

In addition, since the RF sensor is installed using the fastening portions on the existing line, it is not necessary to further manufacture the RF sensor.

1 is a view showing an RF sensor according to an embodiment of the present invention.
2 is a diagram illustrating a sensing operation of a current sensor according to an embodiment of the present invention.
3 is a diagram illustrating a sensing operation of a voltage sensor according to an embodiment of the present invention.
4 is a conceptual view illustrating a current holder structure according to an embodiment of the present invention.
5 is a view illustrating a top board according to an embodiment of the present invention.
6 is a view illustrating a bottom board according to an embodiment of the present invention.
7 is a view schematically showing a decomposition structure of a current sensor according to an embodiment of the present invention.
8 is a diagram illustrating a loop control structure according to an embodiment of the present invention.
9 is a view showing a current holder structure according to the first embodiment of the present invention.
10 is a view showing a current holder structure according to a second embodiment of the present invention.
11 is a diagram illustrating simulation results according to the phase adjustment according to an embodiment of the present invention.
FIG. 12 is a diagram illustrating a simulation result according to a distance between a current sensor and an RF feedthrough according to an embodiment of the present invention. Referring to FIG.
13 is a diagram illustrating a simulation result according to a loop length according to an embodiment of the present invention.
14 is a conceptual view of a voltage holder structure according to an embodiment of the present invention.
15 is a view showing a structure in which a voltage holder structure according to an embodiment of the present invention is actually implemented.
16 is a view schematically showing a decomposition structure of a voltage sensor according to an embodiment of the present invention.
FIG. 17 is a view showing a regulation structure of a capacitive element area according to an embodiment of the present invention.
18 is a view showing a voltage holder structure according to another embodiment of the present invention.
FIG. 19 is a diagram showing a simulation result according to a distance between a voltage sensor and an RF feedthrough according to an embodiment of the present invention. FIG.
FIG. 20 is a diagram showing a simulation result according to an adjustment of the area of a capacitive element according to an embodiment of the present invention.
21 and 22 are perspective views illustrating an RF sensor according to a first embodiment of the present invention.
23 is a perspective view showing an RF sensor according to a second embodiment of the present invention.
24 is a view showing an RF sensor according to a third embodiment of the present invention.
25 is a perspective view showing an RF sensor according to a fourth embodiment of the present invention.
26 is a perspective view illustrating an RF sensor according to a fifth embodiment of the present invention.
27 is a perspective view showing an RF sensor according to a sixth embodiment of the present invention.

As used herein, the singular forms "a", "an" and "the" include plural referents unless the context clearly dictates otherwise. In this specification, the terms "comprising ", or" comprising "and the like should not be construed as necessarily including the various elements or steps described in the specification, Or may be further comprised of additional components or steps. Also, the terms "part," " module, "and the like described in the specification mean units for processing at least one function or operation, which may be implemented in hardware or software or a combination of hardware and software .

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an RF sensor for detecting a current and a voltage according to an RF signal flowing to an RF feedthrough.

Conventionally, the RF sensor includes a current sensor and a voltage sensor as one module, but the RF sensor of the present invention has a current sensor and a voltage sensor separated from each other. By doing so, the current sensor and the voltage sensor can be operated independently.

Since the current sensor and the voltage sensor are separated, a phase difference may occur between the current sensed by the current sensor and the voltage sensed by the voltage sensor. Therefore, the present invention proposes an RF sensor capable of adjusting a phase difference between a current and a voltage through a mechanical operation.

In addition, the RF sensor of the present invention has a structure capable of adjusting the distance between the RF feedthrough and the current sensor or the voltage sensor, and as a result, the signal output sensitivity can be controlled through the signal detection distance control. In particular, the signal output sensitivity adjustment can be realized not only by controlling the distance but also by adjusting the length of the loop or the area of the capacitor.

Conventional RF sensors could not control the signal output sensitivity, so different RF sensors had to be used if the desired frequency or power varied. However, since the RF sensor of the present invention can adjust the signal output sensitivity, it can be applied to a system requiring various frequencies or power.

In addition, conventional RF sensors require additional structures because they are not directly installed for use in conventional semiconductor systems. However, the RF sensor of the present invention can be easily combined with an existing semiconductor system without additional structure.

Hereinafter, various embodiments of the present invention will be described in detail with reference to the accompanying drawings.

FIG. 1 is a view showing an RF sensor according to an embodiment of the present invention. FIG. 2 is a view showing a sensing operation of a current sensor according to an embodiment of the present invention. Fig. 2 is a diagram showing a sensing operation of the voltage sensor according to the first embodiment.

Referring to FIG. 1, the RF sensor of the present embodiment includes a current holder structure 100 and a voltage holder structure 102.

The current holder structure 100 is a structure including a current sensor 202 and is vertically movable through rotation.

The voltage holder structure 102 is a structure including a voltage sensor 302 and is movable up and down through rotation.

According to one embodiment, the RF sensor can accurately correct the phase difference between the current and the voltage sensed through rotation of the current holder structure 100 or the voltage holder structure 102.

In addition, by rotating current holder structure 100 or voltage holder structure 102, the distance between current holder structure 100 or voltage holder structure 102 and RF feedthrough 200 is adjusted. As a result, the output sensitivity of the signal output from the current sensor 202 or the voltage sensor 302 can be adjusted.

The detailed structure and operation of such an RF sensor will be described later.

Referring to FIG. 2, the operation of the current sensor 202 will be described. When an RF signal flows through the RF feedthrough 200, an electromagnetic field is generated around the RF feedthrough 200. The current sensor 202 is formed with a loop, so that a current is induced in the loop by the generated electromagnetic field. That is, the current flows through the loop of the current sensor 202, and as a result, a phase difference occurs between the ground and the output terminal, and information about the phase difference can be output to the outside through the connector.

Referring to FIG. 3, the operation of the voltage sensor 302 will be described. The voltage sensor 302 includes a capacitor. As a result, a predetermined voltage is charged in the capacitor according to the electromagnetic field generated by the RF feedthrough 200. Information on the charging voltage may be output to the outside.

Hereinafter, the after-voltage sensor 302 and related elements described above with respect to the current sensor 202 and related elements will be described below.

First, the structure and operation of the current sensor 202 and associated elements will be described in detail with reference to the accompanying drawings.

FIG. 4 is a conceptual view of a current holder structure according to an embodiment of the present invention, FIG. 5 is a view illustrating a top board according to an embodiment of the present invention, FIG. 6 is a cross- Fig. FIG. 7 is a view schematically showing a decomposition structure of a current sensor according to an embodiment of the present invention, and FIG. 8 is a diagram illustrating a loop control structure according to an embodiment of the present invention. FIG. 9 is a view showing a current holder structure according to a first embodiment of the present invention, and FIG. 10 is a view showing a current holder structure according to a second embodiment of the present invention. FIG. 11 is a graph showing a result of a simulation according to an embodiment of the present invention, and FIG. 12 is a graph illustrating a simulation result according to a distance between a current sensor and an RF feedthrough according to an embodiment of the present invention And FIG. 13 is a diagram illustrating a simulation result according to a loop length according to an embodiment of the present invention.

Referring to FIG. 4, the current holder structure 100 of the present embodiment includes a current sensor 202 and a holder 400.

Here, the connector 406 having the body 410 and the protrusion 412 is electrically connected to the current sensor 202, and the current sensor structure to which the connector 406 is connected is supported by the holder 400.

Specifically, the body portion 410 of the current sensor structure and the connector 406 may be located inside the holder 400, and the protrusion 412 of the connector 406 may protrude to the outside of the holder 400. Of course, the current sensor structure is stably fixed to the holder 400.

According to one embodiment, a screw tap 402 may be formed on the outer circumferential surface of the holder 400 and a groove or hole 404 may be formed on the bottom surface of the holder 400 .

The screw tab 402 formed on the outer circumferential surface of the holder 400 facilitates adjustment of the sensitivity of the current sensor 202. Specifically, as described later, the user can control the signal output sensitivity by adjusting the distance to the RF feed through 200 by rotating the holder 400 in a state where the holder 400 is inserted into the holder inserting portion.

At this time, since the screw tab 402 is formed on the outer circumferential surface of the holder 400, it is easy to adjust the distance from the RF feed through 200 by rotating the holder 400. As a result, the user can realize the desired signal output sensitivity by adjusting the distance between the current sensor 202 and the RF feedthrough 200 through the method of rotating the holder 400. [ Therefore, the current sensor 202 of the present invention can realize a desired output sensitivity through a method of rotating the holder 400 regardless of the frequency and the power.

The screw driver tab 404 formed on the bottom surface of the holder 400 enables fine adjustment of the distance between the current sensor 202 and the RF feedthrough 200 to calibrate the output sensitivity. That is, the user can control the screw driver tab 404 with a screwdriver to finely adjust the signal output sensitivity.

As mentioned above in terms of signal output sensitivity control, turning the current holder structure 100 using the tap 402 or 404 causes the current sensor 202 to be sensed by the current sensor 202 as the angle of the current sensor 202 changes The phase of the current is varied. As a result, the phase difference between the current sensed by the current sensor 202 and the voltage sensed by the voltage sensor 302 can be corrected to a desired value as the current sensor 202 is rotated.

That is, the user can realize the desired output sensitivity by rotating the current holder structure 100 and correct the phase difference between the current and the voltage. Of course, the phase difference can also be corrected by rotating the voltage holder structure 102.

As shown in FIG. 11, a phase difference of 180 degrees is generated between the current and the voltage. It can be confirmed that the phase difference between the current and the voltage is corrected to 0 degree as the current holder structure 100 is rotated.

The phase difference between the voltage and the current may be caused by a resistance used for the sensors 202 and 302, a thickness variation of the board used in manufacturing the sensor, an error in assembling and manufacturing, and the like. The RF sensor of the present invention can correct this phase difference by rotating the sensor 202 or 302. That is, the RF sensor can accurately correct the phase difference between the current and the voltage that may occur in the RF sensor manufacturing process to a desired value.

Referring to FIG. 12, it can be seen that the signal output sensitivity output from the current sensor 202 is adjusted as the distance between the current sensor 202 and the RF feedthrough 200 is adjusted.

Hereinafter, the structure and material of the current holder structure 100 will be described in detail.

According to one embodiment, the holder 400 may be non-conductive as shown in FIG. 9 (B). For example, the holder 400 may be made entirely of Teflon. This is so that the electromagnetic field generated in the RF feedthrough 200 is transmitted to the current sensor 202.

According to another embodiment, the holder 1000 may be made of metal as shown in Fig. Of course, the holder 1000 is electrically isolated from the current sensor 202.

When the whole of the holder 1000 is made of metal, the electromagnetic field generated in the RF feedthrough 200 can not be transmitted to the current sensor 202 and the height of the holder 1000 is controlled by the RF feed through A short circuit may occur when the contact portion 202 contacts the contact portion 202. [ Thus, only the bottom surface 1010 of the holder 1000 that may contact the RF feedthrough 200 may be made of nonconductive material, e.g., Teflon. Of course, a screw tab 102 may be formed on the outer circumferential surface of the holder 1000, and a screw driver tab 1014 may be formed on the bottom surface 1010 of the holder 1000.

Referring again to FIG. 4, the current sensor 202 includes a top board 420 and a bottom board 422.

The top board 420 and the bottom board 422 may be coupled as shown in Figs. 4 and 9 (A). More specifically, grooves 500 and 502 are formed on both sides of the top board 420, and protrusions 600 and 602 are formed on the bottom board 422. In this structure, the top board 420 and the bottom board 422 are joined by inserting the protrusions 600 and 602 into the grooves 500 and 502.

A connector 406 is coupled to the top board 420. Therefore, as shown in FIGS. 5A and 5B and FIGS. 7A and 7B, contact points for connecting with the connector 406 are formed on the top board 420. For example, one of the contacts in the middle of the top board 420 and the four outermost contacts may operate as the output terminals of the current sensor 202, and the output terminals may be connected to the connector 406 .

The upper board 420 may include a conductor pattern for transmitting a current flowing along the loop of the lower board 422 to the output terminals. However, as long as current can be transmitted to the output terminals, the conductor pattern can be variously modified.

Referring to FIGS. 6A and 6B and FIGS. 7A and 7B, a lower board 422 is formed, and a loop (conductor pattern) 430 is formed on the front surface of the lower board 422 And no loops may be formed on the back side.

Also, a resistor connection portion 610 may be formed on the lower board 422 so that a resistor can be connected in the middle of the loop 430.

Referring to FIG. 8, the loop 430 is formed with loop patterns as conductors.

According to one embodiment, the loop 430 may have a ladder shape so that the length of the loop 430 can be adjusted.

Specifically, the loop 430 may include an outer pattern 800 and a plurality of inner patterns 802. The internal patterns 802 are electrically connected to the external pattern 800, but are spaced apart from each other. For example, one end of the inner pattern 802 is connected to one side of the outer pattern 800, and the other end of the inner pattern 802 is connected to the other side of the outer pattern 800.

The user may form loops 430a, 430b, 430c and 430d of varying lengths depending on the desired signal output sensitivity. Specifically, as shown in FIG. 8, the length of the loop 430 may be changed by cutting the contacts where the internal pattern 802 and the external pattern 800 meet.

As the length of the loop 430 increases, the intensity of the signal output from the current sensor 202 increases. When the length of the loop 430 decreases, the intensity of the signal output from the current sensor 202 decreases.

That is, the current sensor 202 of the present embodiment can adjust the desired signal output sensitivity through adjusting the length of the loop 430 as well as adjusting the distance between the current holder structure 100 and the RF feedthrough 200.

This signal output sensitivity adjustment can be confirmed through Fig. Referring to FIG. 13, it can be seen that the signal output sensitivity output from the current sensor 202 is adjusted as the length of the loop 430 of the current sensor 202 is changed.

Meanwhile, the terminals 1 of the lower board 422 shown in FIG. 8 are electrically connected to the upper board 420.

Next, the structure and operation of the voltage sensor 302 and related components will be described in detail with reference to the accompanying drawings.

FIG. 14 is a conceptual view of a voltage holder structure according to an embodiment of the present invention, and FIG. 15 is a view illustrating a structure in which a voltage holder structure according to an embodiment of the present invention is actually implemented. FIG. 16 is a view schematically showing an exploded structure of a voltage sensor according to an embodiment of the present invention, and FIG. 17 is a view showing a structure for controlling the area of a capacitive element according to an embodiment of the present invention. FIG. 18 is a view showing a voltage holder structure according to another embodiment of the present invention. FIG. 19 is a view showing a simulation result according to a distance between a voltage sensor and an RF feedthrough according to an embodiment of the present invention, FIG. 20 is a diagram showing a simulation result according to an adjustment of the area of a capacitive element according to an embodiment of the present invention.

Referring to Fig. 14, the voltage holder structure 102 of the present embodiment includes a voltage sensor 302 and a holder 1400. Fig.

Here, the connector 1402 having the body part 1420 and the protruding part 1422 is electrically connected to the voltage sensor 302, and the voltage sensor structure to which the connector 1402 is connected is supported by the holder 1400.

Specifically, the body portion 1420 of the voltage sensor structure and the connector 1402 may be located inside the holder 1400, and the protruding portion 1422 of the connector 1402 may protrude outside the holder 1400. Of course, the current sensor structure is stably fixed to the holder 1400.

According to one embodiment, a screw tab 1410 may be formed on the outer surface of the holder 1400 and a groove or hole 1412 (screw driver tab) may be formed on the bottom surface of the holder 1400.

The screw tab 1410 formed on the outer circumferential surface of the holder 1400 is for facilitating the sensitivity control of the voltage sensor 302. Specifically, as described later, the user can adjust the signal output sensitivity by adjusting the distance to the RF feed through 200 by rotating the holder 1400 in a state where the holder 1400 is inserted into the holder inserting portion.

At this time, since the screw tab 1410 is formed on the outer peripheral surface of the holder 1400, it is easy to adjust the distance from the RF feed through 200 by rotating the holder 1400. As a result, the user can realize the desired signal output sensitivity by adjusting the distance between the voltage sensor 302 and the RF feedthrough 200 through the method of rotating the holder 1400. Accordingly, the voltage sensor 302 of the present invention can realize a desired output sensitivity through a method of rotating the holder 1400 regardless of the frequency or the power.

On the other hand, the screwdriver tab 1412 formed on the bottom surface of the holder 1400 enables fine adjustment of the distance between the voltage sensor 302 and the RF feedthrough 200 to calibrate the output sensitivity. That is, the user can control the screwdriver tab 1412 with a screwdriver to fine tune the signal output sensitivity.

As mentioned above in terms of adjusting the signal output sensitivity, when the voltage holder structure 102 is rotated using the tap 1410 or 1412, the voltage sensor 302 is sensed by the voltage sensor 302 as the angle of the voltage sensor 302 is changed The phase of the voltage is varied. As a result, by rotating the voltage sensor 302, the phase difference between the voltage sensed by the voltage sensor 302 and the sensed current sensed by the current sensor 202 can be corrected to a desired value (preferably 0) have.

That is, the user can rotate the voltage holder structure 102 to realize the desired output sensitivity and correct the phase difference between the current and the voltage.

Referring to FIG. 19, it can be seen that the signal output sensitivity output from the voltage sensor 302 is adjusted as the distance between the voltage sensor 302 and the RF feedthrough 200 is adjusted.

Hereinafter, the structure and material of the voltage holder structure 102 will be described in detail.

According to one embodiment, holder 1400 may be non-conductive, as shown in Figure 15 (B). For example, the holder 1400 may be made entirely of Teflon. This is because the electromagnetic field generated in the RF feedthrough 200 is transmitted to the voltage sensor 302.

According to another embodiment, the holder 1800 may be made of metal, as shown in Fig. Of course, the holder 1800 is electrically separated from the voltage sensor 302.

When the entire holder 1800 is made of metal, not only the electromagnetic field generated in the RF feedthrough 200 can not be transmitted to the voltage sensor 302 but also the holder 1800 is moved to the RF feed through A short circuit may occur. Thus, only the bottom surface 1804 of the holder 1800 that is likely to come into contact with the RF feedthrough 200 may be made of nonconductive material, e.g., Teflon. Of course, a screw tab 1810 may be formed on the outer surface of the holder 1800 and a screw driver tab 1806 may be formed on the bottom surface 1804 of the holder 1800.

Referring to FIG. 16, the voltage sensor 302 may include one board 1600.

Specifically, as shown in Fig. 16A, on the upper surface of the board 1600, two first capacitive elements 1610 and 1612, resistors 1614 and 1616, 1618 and 1620 may be formed. Here, the first capacitive elements 1610 and 1612 are electrically separated.

Referring to FIG. 16B, four second capacitive elements 1630 and lower connection patterns 1640 may be formed on a lower surface of the board 1600.

The second capacitive elements 1630a and 1630d form a first capacitor with the first capacitive element 1610 and the second capacitive elements 1630b and 1630c form the first capacitive element 1630c, The second capacitor may be formed together with the second capacitor 1612.

The lower connection patterns 1640a, 1640b, 1640c and 1640d electrically connect the second capacitive elements 1630a, 1630b, 1630c and 1630d to the upper connection patterns 1618 and 1620 through the central contact And is electrically connected.

According to one embodiment, the voltage sensor 302 of this embodiment is a method of cutting a part of the lower connection patterns 1640a, 1640b, 1640c and 1640d as shown in (A) to (D) So that the output sensitivity of the signal output from the voltage sensor 302 can be adjusted.

On the other hand, the first capacitive elements, the upper connection patterns, the second capacitive elements, and the lower connection patterns are not limited to the structure shown in the drawings, and may be formed by forming capacitors and adjusting the capacitive circuit area The number and shape thereof can be variously modified.

That is, the voltage sensor 302 of the present embodiment can adjust the desired signal output sensitivity through adjustment of the area of the capacitive element as well as the distance between the voltage holder structure 102 and the RF feedthrough 200.

This signal output sensitivity adjustment can be confirmed through FIG. Referring to FIG. 20, it can be seen that the signal output sensitivity output from the voltage sensor 302 is adjusted as the area of the capacitive element of the voltage sensor 302 is changed.

Hereinafter, various embodiments of the RF sensor of the present invention will be described.

21 and 22 are perspective views illustrating an RF sensor according to a first embodiment of the present invention.

21 and 22, the RF sensor of the present embodiment includes a current holder structure 100 in which a current sensor 202 is incorporated, a voltage sensor structure 102 in which a voltage sensor 302 is incorporated, a holder insertion portion 2100 A first fastening part 2102, and a second fastening part 2104, respectively.

The RF feedthrough 200 is located between the fastening portions 2102 and 2104 and may be in direct contact with the fastening portions 2102 and 2104. This is possible because the fastening portions 2102 and 2104 are made of nonconductive material.

In actual installation structure, an RF sensor can be installed using coupling parts 2102 and 2104 in an RF feedthrough 200 existing inside a device for preventing RF emission such as an RF match box of a semiconductor facility have. That is, the RF sensor can be easily installed in the semiconductor equipment without modifying or changing the existing semiconductor equipment.

The holder insert 2100 includes spaces 2106 and 2108 (holes or grooves) into which the holder structures 100 and 102 can be inserted. That is, the holder structures 100 and 102 can be inserted into the holder insertion portion 2100 and fixed. Here, the spaces 2106 and 2108 are spaced apart, so that the holder structures 100 and 102 can be electrically isolated from each other.

More specifically, since a screw tab is formed on the outer circumferential surface of the holder of the holder structure 100 or 102 and a tab can be formed on the inner surface of the space 2106 or 2108, the holder structure 100 Or the holder structure 100 or 102 can be easily inserted by rotating the holder structure 100 or 102. [

Here, the insertion depth of the holder structure 100 or 102 is determined according to the design distance between the sensor 202 or 302 and the RF feedthrough 200, that is, the desired output sensitivity. In this case, as described above, the screw driver tab formed on the bottom surface of the holder is rotated to finely adjust the distance between the sensor 202 or 302 and the RF feedthrough 200 to achieve accurate output sensitivity, Can be adjusted.

According to one embodiment, the holder and holder insert 2100 may be made entirely of non-conductive Teflon.

The first fastening portion 2102 is wider than the holder insertion portion 2100 and can be formed integrally with the holder insertion portion 2100.

The second fastening portion 2104 may have the same size as the first fastening portion 2102 and may be coupled with the first fastening portion 2102 by screwing through the holes 2110 and 2112. At this time, the fastening portions 2102 and 2104 are spaced apart from each other so that the RF feedthrough 200 can be positioned between the fastening portions 2102 and 2104.

According to one embodiment, fasteners 2102 and 2104 can be made of non-conductive Teflon.

To summarize, the RF sensor of the present embodiment may be made of Teflon, except for the holder, holder insert 2100 and fastening parts 2102 and 2104, except for the connector and sensors 202 and 302, which are both nonconductive.

In addition, the RF sensor of the present invention can be easily mounted on any semiconductor system using the RF feedthrough 200 through a simple fastening structure.

23 is a perspective view showing an RF sensor according to a second embodiment of the present invention.

Referring to FIG. 23, the RF sensor of the present embodiment may include holder structures 100 and 102, holder inserts 2300 and 2304, and fasteners 2302 and 2304. Here, the holders, holder inserts 2300 and 2304, and fasteners 2302 and 2306 may all be non-conductive.

Unlike in the first embodiment, in the RF sensor of this embodiment, the current holder structure 100 and the voltage holder structure 102 are inserted into different holder inserts 2300 or 2304.

The position of the RF feedthrough 200 and fastening of the fastening portions 2302 and 2304 are the same as those in the first embodiment, and the description thereof will be omitted.

The current holder structure 100 is inserted into the space 2310 formed in the current holder insertion portion 2300 and the voltage holder structure 102 is inserted into the space 2312 formed in the voltage holder insertion portion 2304. Of course, the method of adjusting the distance between the current holder insertion portion 2300 or the voltage holder insertion portion 2304 and the RF feedthrough 200 is the same as in the first embodiment.

24 is a view showing an RF sensor according to a third embodiment of the present invention.

24, the RF sensor of the present embodiment includes a current holder structure 100 in which a current sensor 202 is incorporated, a voltage sensor structure 102 in which a voltage sensor 302 is incorporated, a holder inserting section 2400, 1 fastening portion 2402 and a second fastening portion 2404.

The overall RF sensor is similar to the RF sensor of the first embodiment. However, there is a difference that the RF feedthrough 200 is accommodated within the hole 2414 formed by the screwed fasteners 2402 and 2404 through the hole. In this case, since the fastening portions 2402 and 2404 are made of nonconductive material, the RF feedthrough 200 may be in direct contact with the fastening portions 2402 and 2404.

For this purpose, grooves are formed in the fastening portions 2402 and 2404, respectively, and the holes 2414 are formed by joining the grooves.

25 is a perspective view showing an RF sensor according to a fourth embodiment of the present invention.

25, the RF sensor of the present embodiment may include holder structures 100 and 102, holder inserts 2500 and 2504, and fasteners 2502 and 2504. FIG. Here, the holders, holder inserts 2500 and 2504, and fasteners 2502 and 2506 may all be non-conductive.

Unlike in the third embodiment, in the RF sensor of this embodiment, the current holder structure 100 and the voltage holder structure 102 are inserted into different holder inserts 2500 or 2504.

The position of the RF feedthrough 200 and fastening of the fastening portions 2502 and 5304 are the same as in the third embodiment, and the description is omitted here.

The current holder structure 100 is inserted into the space formed in the current holder insertion portion 2500 and the voltage holder structure 102 is inserted into the space formed in the voltage holder insertion portion 2504. [ Of course, the method of adjusting the distance between the holder structure 100 or 102 and the RF feedthrough 200 is the same as in the third embodiment.

26 is a perspective view illustrating an RF sensor according to a fifth embodiment of the present invention.

Referring to FIG. 26, the RF sensor of the present embodiment may include holder structures 100 and 102 and a holder insertion portion 2600.

Spaces 2602 and 2604 through which the holder structures 100 and 102 are inserted are formed at the upper end of the holder insertion portion 2600 and a hole 2606 penetrating the side surface of the holder insertion portion 2600 is also formed do.

The RF feedthrough 200 may be disposed through the hole 2606 that penetrates the side of the holder insertion portion 2600. [ In this case, the RF feedthrough 200 is separated without being directly in contact with the holder inserting portion 2600.

According to one embodiment, the holder insert portion 2600 is entirely made of metal, and the outer surface of the holder structure 100 or 102 except for the bottom surface of the holder may be made of metal and the bottom surface may be made of non-conductive material.

The reason why the holder insertion portion 2600 is formed of metal is to prevent RF emission of the RF feedthrough 200.

27 is a perspective view showing an RF sensor according to a sixth embodiment of the present invention.

Referring to FIG. 27, the RF sensor of this embodiment may include holder structures 100 and 102 and a holder insert 2700. Here, the holder insertion portion 2700 may be made of metal.

Unlike in the fifth embodiment, in the RF sensor of this embodiment, the current holder structure 100 and the voltage holder structure 102 are inserted into the spaces 2704 and 2706 formed on the different sides of the holder insert 2700.

Since the position of the RF feedthrough 200 is the same as in the fifth embodiment, the description will be omitted.

The current holder structure 100 is inserted into a space formed on one side of the current holder insertion portion 2700, for example, the right side, and the voltage holder structure 102 is connected to the other side of the voltage holder insertion portion 2700, And inserted into the space formed in the left side surface. Of course, the method of adjusting the distance between the holder structure 100 or 102 and the RF feedthrough 200 is the same as in the fifth embodiment.

In summary, the RF sensor of the present invention can be used in various forms mounted on an RF feedthrough.

On the other hand, the components of the above-described embodiment can be easily grasped from a process viewpoint. That is, each component can be identified as a respective process. Further, the process of the above-described embodiment can be easily grasped from the viewpoint of the components of the apparatus.

In addition, the above-described technical features may be implemented in the form of program instructions that can be executed through various computer means and recorded in a computer-readable medium. The computer-readable medium may include program instructions, data files, data structures, and the like, alone or in combination. The program instructions recorded on the medium may be those specially designed and constructed for the embodiments or may be available to those skilled in the art of computer software. Examples of computer-readable media include magnetic media such as hard disks, floppy disks and magnetic tape; optical media such as CD-ROMs and DVDs; magnetic media such as floppy disks; Magneto-optical media, and hardware devices specifically configured to store and execute program instructions such as ROM, RAM, flash memory, and the like. Examples of program instructions include machine language code such as those produced by a compiler, as well as high-level language code that can be executed by a computer using an interpreter or the like. The hardware device may be configured to operate as one or more software modules to perform the operations of the embodiments, and vice versa.

It will be apparent to those skilled in the art that various modifications, additions and substitutions are possible, without departing from the spirit and scope of the invention as defined by the appended claims. Should be regarded as belonging to the following claims.

100: current holder structure 102: voltage holder structure
200: RF feedthrough 202: Current sensor
302: voltage sensor 400: holder
402: Screw tab 404: Screw driver tab
406: Connector 420: Top board
422: lower board 430: loop
800: outer pattern 802: inner pattern
1000: holder 1002: connector
1010: bottom surface 1012: screw tab
1014: Screwdriver tab 1400: Holder
1402: Connector 1410: Screw tab
1412: Screwdriver tab 1600: Board
1610, 1612: first capacitive element 1614, 1616: resistor
1618, 1628: upper connection pattern 1630: second capacitive element
1640: Lower connection pattern 1800: Holder
1802: connector 2100: holder insertion portion
2102, 2104: fastening parts 2300, 2304:
2302, 2304: fastening part 2400: holder insertion part
2402, 2404: fastening parts 2500, 2504:
2502, 2506: fastening part 2600: holder insertion part
2700: holder insertion portion

Claims (36)

1. An RF sensor for sensing an RF signal flowing through an RF feedthrough,
A current sensor for sensing a current according to the RF signal; And
And a voltage sensor for sensing a voltage according to the RF signal,
Wherein the current sensor and the voltage sensor are physically separated and the distance between at least one of the current sensor and the voltage sensor and the RF feedthrough is adjustable and wherein the current sensor and the voltage sensor are connected to the RF feedthrough And the phase difference between the current sensed by the current sensor and the voltage sensed by the voltage sensor is adjusted by adjusting the distance between one of the current sensor and the voltage sensor and the RF feedthrough, Wherein the RF sensor is an RF sensor. The method according to claim 1,
A first holder for mounting the current sensor; And
And a second holder for mounting the voltage sensor,
Wherein the current sensor and the first holder form a current holder structure, the voltage sensor and the second holder form a voltage holder structure, and at least one of the first holder and the second holder has a screw tab A screw driver tab is formed on a bottom surface of at least one of the first holder and the second holder and a distance between the sensor and the RF feedthrough is adjusted as the holder is rotated using the taps Wherein the RF sensor is an RF sensor. delete 3. The method of claim 2,
A holder insertion portion formed with spaces in which the current holder structure and the voltage holder structure can be inserted;
A first fastening part integrally formed with the holder insertion part; And
And a second fastening portion to be fastened to the first fastening portion,
Wherein the RF feedthrough is positioned between the first fastening portion and the second fastening portion, and the holders, the holder inserting portion, and the fastening portions are all nonconductive. 5. The RF sensor of claim 4, wherein the fastening portions are formed with grooves, and the RF feedthroughs are arranged in a space formed by joining the grooves. 3. The method of claim 2,
A current holder insertion portion in which a space into which the current holder structure can be inserted is formed;
A voltage holder insertion portion in which a space into which the voltage holder structure can be inserted is formed;
A first fastening part integrally formed with the current holder insertion part; And
And a second fastening part integrally formed with the voltage holder insertion part and fastened to the first fastening part,
Wherein the RF feedthrough is located between the first fastening portion and the second fastening portion and that the holders, the current holder insertion portion, the voltage holder insertion portion, and the fastening portions are all nonconductive. sensor. 7. The RF sensor of claim 6, wherein the fastening portions are formed with grooves, and the RF feedthroughs are arranged in a space formed by joining the grooves. 3. The method of claim 2,
Further comprising a holder inserting portion formed on an upper surface or a lower surface of the current holder structure and spaces into which the voltage holder structure can be inserted,
Wherein a space in which the RF feedthrough is located is formed on a side surface of the holder inserting portion, the remaining portion except the bottom surfaces of the holders and the holder inserting portion are made of metal, and the bottom surfaces of the holders are nonconductor RF sensor. 3. The method of claim 2,
Further comprising a holder inserting portion formed on both sides of the current holder structure and spaces into which the voltage holder structure can be inserted,
Wherein a space in which the RF feedthrough is located is formed on the other side of the holder inserting portion, a region except the bottoms of the holders and the holder inserting portion are made of metal, and the bottoms of the holders are nonconductive RF sensor. The apparatus of claim 1, wherein the current sensor comprises:
A top board; And
And a lower board coupled to the upper board,
A connector is electrically connected to the upper board, and a conductor loop is formed on the lower board.
Wherein the loop has a pattern structure that is adjustable in length by cutting a part of the loop. 11. The method of claim 10,
External pattern; And
Inner patterns,
Both ends of each of the inner patterns are connected to the outer pattern so that the loop has a ladder shape,
Wherein the length of the loop is adjustable by cutting some of the contacts where the outer pattern and the inner pattern meet. The apparatus of claim 1, wherein the voltage sensor comprises a board,
A first capacitor element is formed on one surface of the board, a plurality of second capacitive elements are formed on the other surface of the board,
And the capacitive circuit area is adjusted by cutting off a part of the connection with the second capacitive elements electrically connected to each other. 13. The semiconductor device according to claim 12, wherein connection patterns for electrically connecting the second capacitive elements are formed on the other surface of the board,
And an area of the capacitive circuit is adjusted by cutting a part of the connection patterns. delete delete delete delete delete delete delete delete delete delete delete delete delete delete In the holder structure,
holder; And
And a sensor positioned within the holder and supported by the holder,
The holder is provided with means for correcting a phase difference between a voltage or current sensed by the sensor and a current or voltage sensed by another sensor included in another holder structure. The distance between the feedthrough and the sensor is adjustable and the holder structure and the other holder structure are formed in one structure and the distance between one of the holder structure and the other holder structure and the RF feedthrough is adjusted Wherein the phase difference between the sensed voltage and the sensed current is corrected. 29. The method of claim 28,
And a connector coupled to the sensor,
Wherein a portion of the connector protrudes to the outside of the holder, a screw tab is formed on an outer circumferential surface of the holder, a screw driver tab is formed on a bottom surface of the holder, and at least one of the taps is used to correct the phase difference ≪ / RTI > 29. The apparatus of claim 28, wherein the sensor is a current sensor,
A top board; And
And a lower board coupled to the upper board,
A connector is electrically connected to the upper board, and a conductor loop is formed on the lower board.
Wherein the loop has a pattern structure that is adjustable in length by cutting a part of the loop structure. 29. The apparatus of claim 28, wherein the sensor is a board as a voltage sensor,
A first capacitor element is formed on one surface of the board, a plurality of second capacitive elements are formed on the other surface of the board,
And the capacitive circuit area is adjusted by cutting off a part of the connection while the second capacitive elements are electrically connected to each other.





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