KR101910535B1 - Hybrid nano-wire growing method - Google Patents

Abstract

The present invention relates to a heterogeneous nanowire growth method. According to another aspect of the present invention, there is provided a heterogeneous nanowire growth method comprising: depositing a first compound on a substrate to form a first seed layer; forming a second seed layer on the first seed layer, 1. A method of manufacturing a semiconductor device, comprising the steps of growing a first nano-wire array, coating a photo-resist on the substrate, Removing a portion of PR except for PR coated on the nanowire array; depositing the second compound on the substrate to form a second seed layer; forming the second compound on the second seed layer; Wherein the first compound and the second compound are different from each other, wherein the first nanowire array is grown on the first nanowire array, In the second nanowire array may be different from each other.

Description

[0001] HYBRID NANO-WIRE GROWING METHOD [0002]

The present invention relates to a non-wire growth method. More particularly, the present invention relates to a method of growing a plurality of different nanowires on a single substrate, and a heterogeneous nanowire substrate manufactured by the method and a gas sensor using the heterogeneous nanowire substrate.

Silicon nanowires (SiNW) are important for many applications, such as photovoltaics, Li-ion batteries, chemical / biosensors and transistors. The ability to modify the silicon bandgap and thus its optical properties by controlling the nanowire diameter is important for many of these applications. Large bandgap changes are observed in silicon nanowires with diameters below 10 nm. However, such high-density nanowire arrays of silicon with small diameters suffer from difficulty in synthesis.

There are a number of synthetic techniques for silicon nanowire arrays. For example, the VLS method (vapor-liquid-solid) is a mechanism for the growth of one-dimensional structures such as nanowires from chemical vapor deposition. Growth of one-dimensional nanoscale crystals is challenged through direct adsorption of a gas phase on a solid surface and is generally very slow. The VLS mechanism avoids this by injecting a catalytic liquid alloy phase (generally using noble metals), and this catalytic liquid alloy phase can rapidly absorb the vapor at supersaturated levels from which the crystal growth is subsequently reduced to a liquid- Lt; RTI ID = 0.0 > nucleosides < / RTI >

MOCVD (catalyst-free metalorganic chemical vapor deposition) is a method of growing nanowires without using a catalyst. MOCVD does not use any tack and does no special treatment on the silicon substrate. MOCVD can grow nanowires of high purity, with growth temperatures relatively low and nanowires standing well in the direction perpendicular to the silicon substrate.

There is a hydrothermal method in which the catalyst is not used. Hydrothermal synthesis has long been used for the synthesis of nanocrystals. In recent years, nanowire growth using hydrothermal synthesis has been actively studied because the manufacturing process is simple because it is necessary to melt the reactants in water and maintain a constant temperature and pressure.

In recent years, sensors for various gases have been developed along with an increase in interest in environmental problems and the development of information and communication devices, and manufacturing has been simplified and performance is improved by incorporating semiconductor technology. For all sensors, the goal is to increase the sensitivity to improve performance, and efforts are being made to achieve these goals.

On the other hand, in the conventional semiconductor type gas sensor, there is a limitation on the sensitivity because the sensing material is a semiconductor thin film. For example, in the case of stable chemical substances such as carbon dioxide, detection is almost impossible.

Therefore, sensors for detecting harmful gases such as carbon monoxide (CO) and carbon dioxide are applied by an electrochemical method using a conductive method of a solution, an optical method using an infrared absorption method, and a method of measuring the electrical resistance of nanoparticles or nanowires .

The electrochemical method utilizes an electromotive force generated by the action of ions in a gas phase formed by electrolytically oxidizing or reducing a target gas to measure an electric current flowing in an external circuit or dissolving or ionizing an electrolyte solution or a solid. It has a very slow reaction rate and has a disadvantage that the detection range of the gas and the use environment are limited and the price is also high.

In addition, the optical method by the infrared absorption method is advantageous in that it is hardly influenced by other mixed gas or humidity, but it is disadvantageous in that the apparatus is complicated, the size is increased, and the price is also high.

In recent years, oxide semiconductor type gas sensors have been developed and commercialized as the relationship between the contact reaction by gas chemisorption and the electron density has been clarified. Such semiconductor type gas sensors detect most gases including flammable gases So that it is possible to achieve miniaturization, reduction in cost, and improvement of reliability compared with other types of gas sensors.

In the gas sensor using the carbon nanotube used as the semiconductor type gas sensor, other sensors are required to heat up to about 300 ° C. in order to detect nitrogen oxide and the like. However, the carbon nanotube can operate at room temperature, Because the particle size is nanometer, the sensitivity of the sensor is several thousand times higher than other sensors.

A gas sensor of the type that measures the electrical resistance change of the nanoparticle itself or the material coated with the nanoparticle according to the concentration of the measuring gas has been developed. The use of nanoparticles results in a very high sensitivity because of the very high volume to area ratio, which is highly effective in changing the effect of the surface reaction on the total volume of the gas depending on the change in gas concentration.

Korea Patent Publication No. 2011-0036218

SUMMARY OF THE INVENTION The present invention provides a method of growing a plurality of different nanowires on a substrate.

Another object of the present invention is to provide a substrate comprising a plurality of different nanowires.

Another object of the present invention is to provide a gas sensor using a substrate including a plurality of different nanowires.

The technical objects of the present invention are not limited to the above-mentioned technical problems, and other technical subjects not mentioned can be clearly understood by those skilled in the art from the following description.

According to another aspect of the present invention, there is provided a hetero-nanowire growing method comprising depositing a first compound on a substrate to form a first seed layer, Growing a first nano-wire array comprising the first compound on a substrate; coating a photoresist (PR) on the substrate; Removing a portion of the PR except the PR coated on the first nanowire array from the coated PR, depositing the second compound on the substrate to form a second seed layer, Growing a second nanowire array comprising the second compound on the substrate, wherein PR is present on the substrate, wherein the first compound and the second compound are in contact with each other And the first nanowire array and the second nanowire array may be different from each other.

A nanowire gas sensor according to an embodiment of the present invention includes a silicon substrate having a plurality of nanowire arrays formed on different sides thereof, electrodes formed on both sides of the nanowire array and formed on the silicon substrate, and electrical signals generated from the electrodes. The plurality of nanowire arrays may have different electrical conductivities with respect to a kind of a reaction gas or a concentration of the gas.

According to the present invention as described above, a plurality of different nanowires can be grown on one substrate using only a hydrothermal synthesis method, and a gas sensor is provided using a substrate including a plurality of different nanowires thus fabricated There is an effect that can be.

1 is a perspective view of a substrate comprising a plurality of different nanowire arrays, in accordance with an embodiment of the present invention.
Figure 2 is a flow diagram illustrating a heterogeneous nanowire growth method, in accordance with one embodiment of the present invention.
FIG. 3 is a view illustrating a process of growing a plurality of nanowire arrays different from each other according to a heterogeneous nanowire growth method, according to an embodiment of the present invention.
Figure 4 is a view of a substrate on which a plurality of different nanowire arrays are grown, according to one embodiment of the present invention.
5 is a cross-sectional view of a plurality of different nanowires, according to an embodiment of the present invention.
6 is a cross-sectional view of a sensor incorporating an electrode in a nanowire array, in accordance with some embodiments of the present invention.
7 is a cross-sectional view of a sensor incorporating an electrode in a nanowire array, in accordance with some embodiments of the present invention.
8 is a configuration diagram of a gas sensor using a substrate including a plurality of different nanowires, according to an embodiment of the present invention.
9 is a view showing a substrate in which electrodes are bonded to a plurality of different nanowires, according to an embodiment of the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS The advantages and features of the present invention and the manner of achieving them will become apparent with reference to the embodiments described in detail below with reference to the accompanying drawings. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. Is provided to fully convey the scope of the invention to those skilled in the art, and the invention is only defined by the scope of the claims. Like reference numerals refer to like elements throughout the specification.

Unless defined otherwise, all terms (including technical and scientific terms) used herein may be used in a sense commonly understood by one of ordinary skill in the art to which this invention belongs. Also, commonly used predefined terms are not ideally or excessively interpreted unless explicitly defined otherwise.

1 is a perspective view of a substrate comprising a plurality of different nanowires, according to an embodiment of the present invention. Referring to FIG. 1, a substrate including a plurality of different nanowires according to an embodiment of the present invention will be described in detail.

A substrate 10 comprising a plurality of different nanowires 200, 300, 400 according to an embodiment of the present invention includes a substrate 100, a first nanowire array 200, a second nanowire array 300 and a third nanowire array 400.

The substrate 100 may comprise a silicon substrate, but this is for exemplary purposes only and is not so limited.

The first nanowire array 200, the second nanowire array 300, and the third nanowire array 400 are arrays in which different nanowires are grown. That is, the first nanowire array 200 is a first compound, the second nanowire array 300 is a second compound, the third nanowire array 400 is an array of nanowires grown using a third compound . The first compound, the second compound, and the third compound may be different materials.

For example, the first compound may be TiO ₂ , the second compound may be CuO, and the third compound may be ZnO. This is merely an example, and is not limited thereto.

The first nanowire array 200 includes nanowires grown at a height of h1, the second nanowire array 300 includes nanowires grown at a height of h2, the third nanowire array 400 includes nanowires grown at a height of h2, Lt; RTI ID = 0.0 > h3. ≪ / RTI > The h1, h2, and h3 may be predetermined values, and the growth height of the nanowire may be changed according to the conditions applied during the growth process. For example, when the nanowire is grown by hydrothermal synthesis, the temperature, pressure, or the height grown by the duration of the temperature and pressure used in the hydrothermal synthesis can be determined.

The h1 may be 700 to 800 nm, the h2 may be 700 to 800 nm, and the h3 may be 700 to 800 nm. This is merely an example, and is not limited thereto.

The first nanowire array 200 and the second nanowire array 300 may be grown apart by W1. W1 may be a value having a numeric value greater than or equal to a larger value among h1 and h2. When W1 is determined as described above, interference between the first nanowire array 200 and the second nanowire array 300 can be reduced.

The second nanowire array 300 and the third nanowire array 400 may be grown apart by W2. And W2 may be a value having a numerical value greater than or equal to a larger value among h2 and h3. When the value of W2 is determined as described above, interference between the second nanowire array 300 and the third nanowire array 400 can be reduced.

As shown in FIG. 1, the first nanowire array 200, the second nanowire array 300, and the third nanowire array 400 may be disposed on the same line, but this is merely an example, It does not. For example, although not shown in FIG. 1, a first nanowire array 200, a second nanowire array 300, and a third nanowire array 400 may be disposed at respective vertex locations of a virtual triangle have.

In Figure 1, although three different nanowire arrays are arranged, this is only an example, and according to the present invention, two or more nanowire arrays can be arranged on one substrate. For convenience of explanation, it is assumed that three different nanowire arrays are arranged as shown in FIG. 1 unless otherwise noted.

Figure 2 is a flow diagram illustrating a heterogeneous nanowire growth method, in accordance with one embodiment of the present invention. Referring to FIG. 2, the heterogeneous nanowire growth method will be described in order.

A first compound is deposited on the substrate (S310). The first compound is deposited to form a first seed layer.

A first nanowire array is grown on the first seed layer (S320). The first nanowire array may be grown by hydrothermal synthesis using the first compound. A nanowire array refers to a plurality of nanowire assemblies uniformly grown in a vertical direction.

A PR (photo-resist) is coated on the substrate (S330). The PR coating may be coated over the entire area of the substrate. By making the PR coating over the previously grown nanowires, mixing of the already grown nanowires with other nanowires that are grown additionally can be prevented.

A portion of the coated PR is removed (S340). Some of the remaining PR except the PR coated on the first nanowire array may be removed from the PR coated on the substrate. The removed PR may be a PR in a region where other nanowires are additionally grown. That is, the PR in the region on the substrate on which the nanowire is additionally grown, among the entire PR coating, can be removed.

Additional compounds are deposited on the substrate (S350). A second compound, which is a further compound, is deposited on the substrate to grow another nanowire to form a second seed layer.

An additional nanowire array is grown on the substrate (S360). The second nanowire array may be grown by hydrothermal synthesis using the second compound on the second seed layer.

All PR coatings on the substrate are removed (S370). By removal of the PR coating, only the different nanowire arrays remain on the substrate.

In order to grow additional nanowires, the process is repeated from step S330 (S380). In order to grow another nanowire on the substrate, the third compound is used instead of the second compound, and the process is repeated from step S330.

FIG. 3 is a view illustrating a process of growing a plurality of nanowire arrays different from each other according to a heterogeneous nanowire growth method, according to an embodiment of the present invention. Referring to FIG. 3, a process for growing three different nanowire arrays according to one embodiment of the present invention will be described in detail.

In step (a), the first seed layer 210 is deposited on the substrate 100. The first seed layer 210 may be deposited using the first compound.

For example, the first compound may include TiO ₂ and may be deposited on the first seed layer 20 [nm] thick by a physical vapor deposition method including any one of e-beam and RF sputtering. 210 may be deposited, but this is merely exemplary and not limiting.

Next, in step (b), the first nanowire array 200 is grown on the first seed layer 210. The first nanowire array 200 may be grown using hydrothermal synthesis using the first compound.

For example, by using a hydrothermal synthesis method in which 30 [mL] of HCl and 1 [mL] of titanium butoxide are mixed with 30 [mL] of deionized water and heated at 130 ° C. for 5 hours, the first nanowire array 200 that includes _two may be grown. This is merely an example, and is not limited thereto.

Next, in step (c), the PR 600 is coated on the entire area on the first substrate.

Next, in step (d), a portion of the remaining PR except the PR coated on the first nanowire array 200 among the PR coated on the substrate 100 is removed. The removed PR may be a PR in a region 610 where the second nanowire array is to be grown in a subsequent step.

Some PRs are selectively removed as follows. For example, partial PR can be removed by ultraviolet rays passing through the mask by irradiating ultraviolet (UV) light onto a patterned mask using a mask aligner.

Next, in step (e), a second seed layer 310 is deposited on the substrate 100. The second seed layer 310 may be deposited using a second compound. The second seed layer 310 may be deposited on the coated PR 600 as well as the second nanowire array region 610.

For example, the second compound includes CuO, and a second seed layer 310 of 20 [nm] thickness can be deposited by a sputtering process, but this is for illustrative purposes only and is not limiting.

Next, in step (f), the second nanowire array 300 is grown on the second seed layer 310. The nanowire array 320 which is unnecessary on the second seed layer 310 deposited on the PR 600 can be grown.

The second nanowire array 300 may be grown using hydrothermal synthesis using the second compound. For example, a hydrothermal synthesis method in which Cu (NO ₃ ) ₂ .6H ₂ O 1.812 [g] is mixed with deionized water and 1.0514 [g] of hexamethylenetetramine is mixed and heated at 90 ° C for 9 hours A second nanowire array 300 comprising the CuO may be grown. This is merely an example, and is not limited thereto.

Next, in step (g), the PR 600 coating present on the substrate 100 is removed. In step (g), all PR (600) coatings present on the substrate 100 may be removed. By removing all PR (600) coatings, the nanowire arrays 320 grown on the PR (600) coating can also be removed together. In order to remove the PR 600 coating, the PR 600 may be irradiated with ultraviolet rays.

Additionally, step (g) may include cleaning. For example, after irradiating the PR 600 with ultraviolet light, it may be washed with acetone for 5 minutes, then with IPA (isopropyl alcohol) for 5 minutes, and then with deionized water for 5 minutes. Through this cleaning, the PR remaining on the substrate 100 and the unnecessary nanowire array 320 can be removed together.

When step (g) is completed, only the first nanowire array 200 and the second nanowire array 300 are present on the substrate 100.

Next, in step (h), the PR 600 is coated on the substrate 100. The PR 600 is coated on the entire region on the substrate 100.

Next, in step (i), part of the PR 600 coated on the substrate 100 is removed. A portion of the remaining PR except the PR coated on the first nanowire array 200 and the second nanowire array 300 among the PR 600 coated on the substrate 100 is removed. The removed PR may be a PR in a region 620 where the third nanowire array is to be grown in a subsequent step. By this removal, the PR 600 is only present on the first nanowire array 200 and the second nanowire array 300.

Next, in step (j), a third seed layer 410 is deposited on the substrate 100. The third seed layer 410 may be deposited using a third compound.

For example, the third compound includes ZnO, and a third seed layer 410 of 20 [nm] thickness can be deposited by a sputtering process, but this is for illustrative purposes only and is not limiting.

The third seed layer 410 may be deposited not only on the substrate 100, but also on the first nanowire array 200 and the second nanowire array 300.

Next, in step (k), the third nanowire array 400 is grown on the third seed layer 410. [ The third nanowire array 400 may be grown using hydrothermal synthesis using the third compound.

For example, a hydrothermal synthesis method in which 1.785 g of Zn (NO ₃ ) ₂ .6H ₂ O and 0.841 g of hexamethylenetetramine are mixed in deionized water and heated at 90 ° C for 3 hours A third nanowire array 400 of the ZnO material may be grown. This is merely an example, and is not limited thereto.

the third seed layer 410 deposited on the first nanowire array 200 and the second nanowire array 300 is also unnecessary in the process of growing the third nanowire array 400 in step (k) The nanowire array 420 can be grown.

Finally, in step (l), all PR (600) coatings on the substrate 100 are removed. Removing the PR 600 in step (l) may be the same as removing the PR 600 in step (g).

the unnecessary nanowire arrays 420 along with the PR 600 coated in step (l) are also removed so that the first nanowire array 200, the second nanowire array 300, 3 nanowire array 400 may be present.

Although the first nanowire array 200, the second nanowire array 300, and the third nanowire array 400 are attached to each other without a gap for convenience of explanation in FIG. 3, this is only an example, And may be spaced apart by W1 or W2 as shown.

FIG. 4 is a view illustrating a substrate on which a plurality of different nanowires are grown, according to an embodiment of the present invention, and FIG. 5 is a cross-sectional view of a plurality of different nanowires, according to an embodiment of the present invention.

Referring to FIG. 4, a nanowire array of TiO ₂ , CuO, and ZnO can be formed on a single substrate by the heterogeneous nanowire growth method of the present invention.

Referring to FIG. 5, the nanowire arrays of TiO ₂ , CuO, and ZnO are grown vertically on a substrate, but may have different densities, heights, and shapes.

6 is a cross-sectional view of a sensor incorporating an electrode in a nanowire array, in accordance with some embodiments of the present invention.

Referring to FIG. 6, a sensor using a nanowire array according to some embodiments of the present invention includes a substrate 100, a first electrode 710, a nanowire array 200, a second electrode 720, (Not shown).

 The first electrode 710 may be deposited as a metal on the substrate 100 before the nanowire array 200 is grown. The nanowire array 200 may be a nanowire array grown on the first electrode 710 according to a heterogeneous nanowire growth method according to an embodiment of the present invention.

The second electrode 720 may be positioned to contact the top of the nanowire array 200.

The first electrode 710 and the second electrode 720 can transmit an electric signal generated by the first electrode 710 and the second electrode 720 to the detector 750 when the detection target is captured in the nanowire array 200. For example, when the sensor is a gas sensor, when a gas is detected in the nanowire array 200, an electrical signal generated according to the detection is transmitted to the outside through the first electrode 710 and the second electrode 720 Lt; / RTI >

7 is a cross-sectional view of a sensor incorporating an electrode in a nanowire array, in accordance with some embodiments of the present invention.

7, a sensor according to some embodiments of the present invention may include a substrate 100, a nanowire array 200, a first electrode 810, a second electrode 820, and a detector 850 have.

The substrate 100 and the nanowire array 200 are the same as those described in the heterogeneous nanowire growth method according to an embodiment of the present invention, and therefore, a description thereof will be omitted to avoid redundant description.

The first electrode 810 may be positioned in contact with the upper end of the nanowire on the side of the nanowires included in the nanowire array 200. The second electrode 820 may be positioned in contact with the top of another nanowire located on the other side facing the side.

The first electrode 810 and the second electrode 820 can transmit an electric signal generated to the detector 850 when the detection target is captured in the nanowire array 200. For example, when the sensor is a gas sensor, when a gas is detected in the nanowire array 200, an electrical signal generated according to the detection is transmitted to the outside through the first electrode 810 and the second electrode 820 Lt; / RTI >

8 is a configuration diagram of a gas sensor using a substrate including a plurality of different nanowires, according to an embodiment of the present invention.

Referring to FIG. 8, a nanowire gas sensor 900 using a substrate 10 including a plurality of different nanowires according to an embodiment of the present invention will be described in detail.

A nanowire gas sensor 900 according to an embodiment of the present invention includes a substrate 100, a first nanowire array 200, a second nanowire array 300, a third nanowire array 400, And may include a first electrode 910, a second electrode 920, a third electrode 930, a fourth electrode 940, a fifth electrode 950, a sixth electrode 960, and a sensing unit 990 have.

The substrate 100, the first nanowire array 200, the second nanowire array 300, and the third nanowire array 400 are the same as those described in the heterogeneous nanowire growth method according to an embodiment of the present invention Explanations are omitted in order to avoid redundant explanations.

The first electrode 910 and the second electrode 920 may be connected to the nanowire included in the first nanowire array 200 in contact with the top of the first nanowire array 200. The third electrode 930 and the fourth electrode 940 may be connected to the upper end of the second nanowire array 300 and connected to the nanowires included in the second nanowire array 300. The fifth electrode 950 and the sixth electrode 960 may be connected to the upper end of the third nanowire array 400 and connected to the nanowires included in the third nanowire array 400.

The first electrode 910 and the second electrode 920, the third electrode 930 and the fourth electrode 940 and the fifth electrode 950 and the sixth electrode 960 are connected to the first nanowire array 200 ), The second nanowire array 300 and the third nanowire array 400 are the same as those of the electrode connection shown in FIG. 7, so that detailed description is omitted in order to avoid duplication of description.

The sensing unit 990 may process electrical signals transmitted from the first electrode 910 to the sixth electrode 960. Each of the nanowire arrays 200, 300, and 400 has different characteristics, so that the degree of reacting to different concentrations of gases or gases differs, resulting in different electrical signals. Electric signals generated in the nanowire arrays 200, 300, and 400 according to the detection of the gas may be transmitted to the sensing unit 990 through the first to fourth electrodes 910 to 960. The sensing unit 990 receives the electrical signal and can output a sensing value indicating the concentration of the gas or the concentration of the gas.

9 is a view showing a substrate in which electrodes are bonded to a plurality of different nanowires, according to an embodiment of the present invention.

The substrate shown in Fig. 9 is a sensor substrate in which a plurality of electrodes 910 to 960 are connected to the substrate shown in Fig. When the electrodes 910 to 960 of the sensor substrate are connected to the sensing unit, the nanowire gas sensor 900 shown in FIG. 8 may be used.

While the present invention has been described in connection with what is presently considered to be practical exemplary embodiments, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, You will understand. It is therefore to be understood that the above-described embodiments are illustrative in all aspects and not restrictive.

Substrate 100 The first nanowire array 200
Second nanowire array 300 Third nanowire array 400

Claims (18)

Depositing a first compound on a substrate to form a first seed layer;
Growing a first nano-wire array comprising the first compound on the first seed layer;
Coating a photoresist (PR) on the substrate;
Removing a portion of the remaining PR except the PR coated on the first nanowire array from the PR coated on the substrate;
Depositing a second compound on the substrate to form a second seed layer;
Growing a second nanowire array comprising the second compound on the second seed layer; And
And removing PR present on the substrate,
The forming of the second seed layer comprises:
And forming the second seed layer by a first distance from the first seed layer,
The first gap
A height of the first nanowire array and a height of the second nanowire array,
Wherein the first compound and the second compound are different from each other and the first nanowire array and the second nanowire array are different from each other,
A method for growing heterogeneous nanowires. delete The method according to claim 1,
Wherein growing the first nanowire array comprises:
Wherein the first nanowire array comprising the first compound is grown by hydrothermal synthesis,
Wherein growing the second nanowire array comprises:
Wherein the second nanowire array comprising the second compound is grown by hydrothermal synthesis.
A method for growing heterogeneous nanowires. The method according to claim 1,
The first compound may be,
TiO ₂ ,
A method for growing heterogeneous nanowires. 5. The method of claim 4,
The forming of the first seed layer may include:
Comprising the step of forming the first seed layer with a thickness of 20 [nm] comprising TiO ₂ by a physical vapor deposition method comprising any one of electron beam (E-beam) or high frequency sputter (RF sputter)
A method for growing heterogeneous nanowires. 5. The method of claim 4,
Wherein growing the first nanowire array comprises:
Comprising the step of growing a first nanowire array comprising TiO ₂ by hydrothermal synthesis of HCl and titanium butoxide in deionized water.
A method for growing heterogeneous nanowires. The method according to claim 1,
The second compound may be,
CuO,
A method for growing heterogeneous nanowires. 8. The method of claim 7,
The forming of the second seed layer may include:
And forming the second seed layer having a thickness of 20 [nm] including the CuO by a sputtering process.
A method for growing heterogeneous nanowires. 8. The method of claim 7,
Wherein growing the second nanowire array comprises:
The second nanowire array comprising the CuO material is grown by hydrothermal synthesis in which deionized water is mixed with Cu (NO ₃ ) ₂ .6H ₂ O and hexamethylenetetramine ,
A method for growing heterogeneous nanowires. The method according to claim 1,
After the PR is removed on the first nanowire array,
Coating a photoresist (PR) on the substrate;
Removing a portion of the PR except the PR coated on the first nanowire array and the second nanowire array from the PR coated on the substrate;
Forming a third seed layer on which a third compound is deposited on the substrate;
Growing a third nanowire array comprising the third compound on the third seed layer; And
Removing PR present on the substrate; ≪ / RTI >
A method for growing heterogeneous nanowires. 11. The method of claim 10,
The forming of the third seed layer comprises:
And forming the third seed layer by a second distance from the first seed layer or the second seed layer,
The second gap
Wherein the height of the third nanowire array and the height of the nanowire array grown on the first seed layer or the second seed layer adjacent to the third seed layer have values greater than a larger value,
A method for growing heterogeneous nanowires. 11. The method of claim 10,
Wherein growing the third nanowire array comprises:
Wherein the third nanowire array comprising the third compound is grown by hydrothermal synthesis.
A method for growing heterogeneous nanowires. 11. The method of claim 10,
The third compound may be,
ZnO,
A method for growing heterogeneous nanowires. 14. The method of claim 13,
The forming of the third seed layer may include:
And forming the third seed layer having a thickness of 20 [nm] including the ZnO by a sputtering process.
A method for growing heterogeneous nanowires. 14. The method of claim 13,
Wherein growing the second nanowire array comprises:
The third nanowire array comprising ZnO is grown by hydrothermal synthesis in which deionized water is mixed with Zn (NO ₃ ) ₂ .6H ₂ O and hexamethylenetetramine.
A method for growing heterogeneous nanowires. The method according to claim 1,
Before the step of forming the first seed layer,
Further comprising forming a metal layer on the substrate,
A method for growing heterogeneous nanowires. delete delete

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