KR101901967B1 - Gas supplying apparatus for semiconductor manufacturing apparatus - Google Patents

Abstract

The present invention provides a gas supplying apparatus for a semiconductor manufacturing apparatus, which comprises: a housing providing an installation space; a storage container installed in the housing, and storing a source gas; a heating means having a heat pipe installed on a surface of the storage container and filled with a heating fluid therein and a heater providing thermal energy to the heat pipe and heating the storage container by enabling the heating fluid to be heated; and a gas discharge means having a pipe discharging the source gas to the outside along with a carrier gas after being supplied with the carrier gas in the storage container.

Description

[0001] The present invention relates to a gas supply apparatus for a semiconductor manufacturing facility,

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a gas supply apparatus for a semiconductor manufacturing facility, and more particularly to a gas supply apparatus for supplying a gas for a manufacturing process such as TEOS to a semiconductor manufacturing facility such as CVD To a gas supply device for a semiconductor manufacturing facility capable of improving the heat exchange efficiency of the means and completely preventing the leakage of the gas transfer hose.

The present invention also relates to a method of manufacturing a semiconductor device which can be divided into a processor tank for supplying gas to the manufacturing facility and a bulk tank for automatically filling the processor tank with gas, To a gas supply device for a facility.

Generally, a semiconductor device is formed by forming various kinds of layers on a wafer and insulating or energizing a part of each layer. The insulating film formed for insulation of each layer is formed by depositing a source gas which is a material of an insulating film into a chamber in which a wafer is placed, applying energy to the source gas and activating the deposited film on a wafer or a specific layer already formed on the wafer do. TEOS, TDMAT, TEPO, TEB and MDEOS are used as the source gas. For example, TEOS is supplied to the process chamber and reacts with oxygen by changing the liquid state TEOS to a gaseous state for deposition. At this time, a carrier gas is supplied to change the liquid state TEOS to the gaseous state, and the liquid state TEOS is supplied to the inside of the process chamber after being converted to the gaseous state.

On the other hand, as a device for supplying the carrier gas and the source gas as described above to a semiconductor manufacturing facility such as a CVD or the like, a gas supply device for a semiconductor manufacturing facility as disclosed in Japanese Patent Laid-Open No. 10-2006-75514 is used.

A conventional gas supply device for a semiconductor manufacturing facility includes a storage container in which a source gas is stored, a heating device installed in the storage container to heat the storage container to a predetermined temperature, a temperature control device for controlling the temperature of the heating device, And a gas discharging means for discharging nitrogen gas or helium gas, that is, a carrier gas, together with nitrogen gas or helium gas to the inside of the storage container and discharging the source gas to the outside, and heating the storage container through a heating means, The source gas is supplied to the semiconductor manufacturing facility such as CVD or the like together with the carrier gas through the gas discharging means.

In the conventional gas supply apparatus for a semiconductor manufacturing facility, as described above, the heating means includes an insulating sheet surrounding the storage container, a heat line arranged on the outer surface of the insulating sheet, A heat insulating material formed on the outer surface of the fixed insulating sheet, a protective film coated on the outer surface of the heat insulating material, and an insulating tube sandwiched between the insulating sheet and the heat insulating material to enclose the heat insulating material.

However, even if the hot wire is installed in the storage container at all or locally as described above, there is a problem in that a lot of electrical energy is consumed in the operation of converting electric energy provided to the hot wire having a predetermined length into thermal energy, The manufacturing process is complicated due to the complicated configuration such as the manufacturing cost and the manufacturing time is high.

On the other hand, in the conventional gas supply apparatus for a semiconductor manufacturing facility, since gas is supplied from one or a plurality of storage containers filled with a source gas to the manufacturing facility, when the source gas filled in the storage container is exhausted, In this case, there is a problem that the gas supply process must be interrupted, which results in a problem that the manufacturing efficiency is greatly reduced.

Further, in the conventional gas supply device for semiconductor manufacturing equipment, in the case of the gas transfer hose of the gas discharge means for transferring the carrier gas and the source gas, in order to secure durability and flexibility at the same time according to installation position, A mesh tube which protects the main pipe and is made of fibrous material, and a sleeve which is connected to the end of the main pipe and is connected to the device or another hose.

However, the conventional gas transfer hose has a problem that the sleeve and the end portion of the main pipe and the connection portion between the mesh pipe and the sleeve are not firm and stable, and leakage occurs during transfer of the gas, which makes it impossible to supply the gas accurately or contaminate the periphery.

SUMMARY OF THE INVENTION It is therefore an object of the present invention to provide a heat exchanger in which a heat pipe filled with a heat generating fluid is provided on the outer surface of a storage container and a heater is installed at an end of the heat pipe, And to provide a gas supply device for a semiconductor manufacturing facility capable of heating a storage tank by a heat-generating fluid of a heat pipe to be exothermically operated.

It is a further object of the present invention to provide a process cartridge and a method of manufacturing the same, wherein the storage vessel is divided into a processor tank for supplying the source gas to the manufacturing facility and a bulk tank for filling the processor tank when the source gas is exhausted, And a gas supply device for a semiconductor manufacturing facility.

It is another object of the present invention to provide a gas supply apparatus for a semiconductor manufacturing facility which can completely prevent gas leakage of the gas delivery hose of the gas discharge means.

Meanwhile, the object of the present invention is not limited to the above-mentioned objects, and other objects not mentioned can be clearly understood by those skilled in the art from the following description.

According to an aspect of the present invention, A storage container installed in the housing and storing the source gas; A heating means installed on the surface of the storage container and including a heat pipe filled with a heat generating fluid therein and a heater for supplying heat energy to the heat pipe and heating the heat generating fluid to heat the storage container; And a gas discharge means including a pipe for supplying a carrier gas into the interior of the storage container and discharging the source gas to the outside together with the carrier gas.

Here, the storage vessel includes a processor tank for supplying a source gas to the manufacturing facility, and a bulk tank for filling the source gas in the processor tank when the source gas is depleted, It is preferable that a carrier gas removing valve is provided.

The heat pipe may be a metal pipe having a plurality of openings arranged at regular intervals on the surface of the storage container, or a spiral structure surrounding the surface of the storage container, the inside of which is sealed and one or a part of which is heated by a heater Wow; And a heat generating fluid filled in the tube and heated by the heater to generate heat energy.

The heat pipe is configured by arranging a plurality of heat pipes on the surface of the storage container at regular intervals or by a helical structure surrounding the surface of the storage container and heating the heat generating fluid by a heater formed inside the tube of a flexible material And a sealing member for preventing leakage of the exothermic fluid is coupled to the end portion.

Further, the pipe comprises: a main pipe formed of carbon black-containing polytetrafluoroethylene and formed of a corrugated pipe; A mesh tube formed of nylon synthetic fiber surrounding the main pipe to protect the main pipe and insulate the gas transported into the main pipe; An outer tube formed of silicone synthetic rubber and formed to surround the entire outer surface of the mesh pipe to protect the main pipe and the mesh pipe and to prevent interference of the peripheral device by the mesh pipe; A connecting portion communicating with the inside of the main pipe and being integrally formed with the connecting portion, the connecting portion and the connecting portion protruding outwardly to communicate with the connecting portion and to supply gas supplied or supplied to the inside of the main pipe to the device or another pipe A sleeve integrally having an end of the main pipe and a sleeve portion into which an end of the mesh pipe is inserted and an end of the outer pipe is inserted; And a fastening member which is fastened to one end of the outer tube and to the outside of the sleeve portion of the sleeve so as to connect and fix the main tube, the mesh tube and the outer tube to the sleeve.

Therefore, the present invention facilitates the construction of the heating means through the simple structure in which the heat pipe filled with the exothermic fluid is provided on the outer surface of the storage container and the heater is installed at the end of the heat pipe, So that the storage tank can be heated by the exothermic fluid of the heat pipe which is exothermically operated.

In addition, the storage vessel may be divided into a processor tank for supplying the source gas to the manufacturing facility and a bulk tank for filling the processor tank when the source gas is exhausted, so that the gas supply process at the time of filling the source gas can be stopped.

Further, gas leakage of the gas delivery hose of the gas discharge means can be completely prevented.

On the other hand, the effects of the present invention are not limited to the effects mentioned above, and other effects not mentioned can be clearly understood by those skilled in the art from the description of the claims.

1 is a perspective view showing a gas supply device for a semiconductor manufacturing facility according to a preferred embodiment of the present invention;
Figs. 2 to 4 are a front view, an internal front view and an internal top view, respectively, of the gas supply device of Fig. 1; Fig.
FIG. 5 is a view showing the configuration of the storage container and the gas discharge means in the gas supply device of FIG. 1; FIG.
6 is a view showing a configuration of a storage container and a heating means in the gas supply apparatus of FIG. 5;
Figs. 7 and 8 are views showing an embodiment of the gas delivery hose of the gas discharge means in the gas supply apparatus of Fig. 5;
FIG. 9 and FIG. 10 are views showing the configuration of the gas leakage detecting means provided at the pipe connecting portion of the gas discharge means and the pipe in the gas supply device of FIG. 5; And
11 to 15 are respectively a perspective view, a front view, an internal front view, an internal plan view, and a structure of a storage container and a gas discharging means, showing a gas supply device for a semiconductor manufacturing facility according to another embodiment of the present invention .

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 to 10, a gas supply apparatus for a semiconductor manufacturing facility according to a preferred embodiment of the present invention includes a housing H for providing a space in which components are compactly installed and stored through a box structure, A storage vessel B which is installed at one or more inside the housing H and stores a source gas, a heat pipe 120 installed at the surface of the storage vessel B and filled with a heat generating fluid 110 therein, And a heater 130 for heating the surface of the storage container B to a predetermined temperature by supplying heat energy to the heat pipe 120 and causing the heat generating fluid 110 to generate heat, A gas exhausting means F including a pipe 200 for exhausting a source gas to the outside together with a carrier gas after receiving a carrier gas into the container B and a pipe 200 of the gas exhausting means F, And the pipe 200, And gas leakage detecting means 300 for visually and electrically detecting whether or not the gas leaking from the connection portion of the gas sensor 200 is leaked.

Here, the gas supply device for a semiconductor manufacturing facility of the present invention includes: a weight sensor means for measuring a charged amount of a source gas of the storage container (B); and a temperature sensor for controlling the operation of the heating means (100) Pressure regulating means for regulating the pressure of the gas discharging means F, and control means for electrically controlling the overall operation of the constituent units.

The housing (H) is a casing means for providing a space for installing the components compactly through the box structure.

11 to 15, the housing H is partitioned into three partitions (spaces), and a pair of storage containers B are formed in each partition and used for each processor and bulk .

In this case, if the housing H has three partitions as described above, doors for opening and closing the respective partitions are preferably formed in each partition for independent use, and a castor may be formed at the lower end for movement have.

Therefore, according to the housing H, a pair of storage containers B are formed in each of the plurality of partitions, so that different source gases can be supplied to various semiconductor manufacturing facilities, Improvement can be made possible.

The storage vessel B is preferably a storage means in which one or more of the storage vessels B are installed in the housing H and stores the source gas, more preferably a material having a high thermal conductivity, It will be omitted.

Here, the storage vessel (B) is divided into a processor tank for directly supplying the source gas to the production facility and a bulk tank for automatically charging the source gas into the processor tank.

At this time, the processor tanks and the bulk tanks may be individually formed in one housing H, as shown in Figs. 1 to 10, or may be formed in one housing H Are partitioned into a plurality of partitions, a pair can be configured as a couple in one space.

Here, the processor tank is connected to the gas discharging means F so that the source gas is supplied to the manufacturing facility through the carrier gas. The bulk tank is connected to the source gas storage tank, which is formed outside the housing H, And the source gas may be charged into the processor tank when the carrier gas is supplied from the gas discharging means (F) formed in the processor tank.

Therefore, according to the storage vessel (B), it is constituted of a processor tank for supplying a source gas to the manufacturing facility and a bulk tank for filling the source gas in the processor tank when the source gas is depleted, The source gas can be continuously charged from the bulk tank into the processor tank, thereby preventing the manufacturing process from stopping and improving the manufacturing efficiency.

In the present invention, when the storage vessel B is divided into the processor tank and the bulk tank as described above, an end portion of the pipe 200 in which the source gas is filled between the processor tank and the bulk tank, that is, A carrier gas removal valve (not shown) may be provided at a location proximate to the processor tank to allow the source gas to be charged from the bulk tank to the processor tank, together with the carrier gas, .

The heating means 100 is a means for heating the storage container B and includes a heat pipe 120 and a heat pipe 120 installed on the surface of the storage container B and filled with a heat generating fluid 110, And a heater 130 that heats the surface of the storage container B to a predetermined temperature by providing heat energy and causing the exothermic fluid 110 to exothermically operate.

A plurality of heat pipes 120 may be arranged on the surface of the storage container B at regular intervals or may have a helical structure while covering the surface of the storage container B, B) is provided with a tube body that is sealed inside and one or a part of which is heated by the heater 130, and a tube body that is filled in the tube body and heated by the heater 130 to generate thermal energy And an exothermic fluid 110.

Here, the heat pipe 120 may, for example, be a metal pipe of a vacuum structure.

The heater 130 is a heat transfer means that is configured to be able to contact an end or a part of the heat pipe 120 and is exothermically operated at a predetermined temperature by an operation power supplied from an external power supply means. It is preferable to use an electrothermal heater or a PTC heater.

In addition, the heater 130 can be easily combined with the heat pipe 120 and the heater 130 through an installation groove in which an end or a part of the heat pipe 120 is fitted or fixed, thereby improving installation efficiency .

In addition, the surface of the storage container B is also provided with an installation piece corresponding to the installation groove, so that the heat pipe 120 can be easily contacted and fixed, thereby improving installation efficiency.

 Here, the PTC heater reduces the resistance when the temperature is low, increases the current flowing therethrough, generates heat, and when the temperature is higher than the predetermined temperature, the resistance decreases and the current decreases to reduce the heat generation amount. Means a heater that maintains a constant temperature. Such a PTC heater has a long lifetime and does not react with oxygen in the air, so it does not generate oxidizing gas, which causes air pollution, and is environmentally friendly, and has a merit that heat transfer can be performed quickly.

The heat generating fluid 110 is filled in the heat pipe 120 and is vaporized by the heat energy of the heater 130 at one end of the heat pipe 120 and moves to the other end of the heat pipe 120, (50 to 62 parts by weight of acetone, 10 to 15 parts by weight of ethanol, 15 to 20 parts by weight of distilled water, 5 to 10 parts by weight of potassium dichromate, 3 to 6 parts by weight of sodium perborate, 10 to 15 parts by weight of a nanoparticle metallic material, and 1 to 1.5 parts by weight of a dolvy suppressing crystal, and the like.

The nanoparticle metallic material is made of at least one metal selected from gold, silver and copper having excellent thermal conductivity, and increases the heat transfer area and the heat capacity of the fluid inside the heat pipe 120 to improve the effective conductivity of the fluid compositions It is desirable to enhance the interaction and fusion at the flow area between the nanoparticle metallic material and the fluid compositions, to enhance the mixing and turbulence flow of the fluid compositions and to reduce the reverse temperature gradient of the fluid compositions by diffusion of the nanoparticle metallic material , And the size is preferably 10 nm or less.

If the amount of the metal nanoparticles is less than 10 to 15 parts by weight, the thermal conductivity largely decreases. If the amount of the metal nanoparticles exceeds the range, the thermal conductivity may not be uniformized due to precipitation or migration toward one side. At this time, since the size may have a similar phenomenon to the weight portion, it is preferable to have the critical meaning as described above.

The exothermic fluid 110 further contains 0.005 part by weight of a surfactant based on 1 part by weight of the dolby phenomenon suppressing crystal.

The distilled water is heated to 85 ° C. and mixed with the potassium dichromate and sodium perborate until it is transparent. The distilled water, distilled water, dichromic acid Potassium and sodium perborate mixed solution are mixed with the above Dolby phenomenon inhibiting crystals. Here, the potassium dichromate (vaporization point 398 ° C) and sodium perborate (difficult to vaporize) are stabilized at room temperature and atmospheric pressure, which is advantageous at high temperature. Thereafter, 0.005 part by weight of the surfactant is added to 1 part by weight of the dolby phenomenon suppressing crystal. Here, the surfactant is a cationic polymer aggregate, and when the dolvy suppressing crystal is dispersed, the surfactant encapsulates the dolvy suppressing crystal particles to prevent the dolvy suppressing crystal from precipitating. Thereafter, the remaining acetone and ethanol are mixed with the mixed solution in which the dolby phenomenon suppressing crystal is mixed. The above acetone (vaporization point 56.5 ° C) and ethanol (vaporization point 78.32 ° C) are vaporized at a low temperature so that they can carry heat quickly.

Here, the amount of the crystallization inhibiting crystals of the exothermic fluid 110 may be adjusted according to the scale of the heat pipe 120 and the amount of the working fluid, but it is preferable to follow the mixing ratio for effective heat transfer. As described above, since the droplet phenomenon suppressing crystal particles are prevented from being precipitated, the heat-generating fluid 110 is uniformly distributed when the heat-generating fluid 110 circulates inside the heat pipe 120, thereby uniformly spreading heat to the entire area of the heat pipe 120 . On the other hand, when the Dolby phenomenon suppressing crystal is simply added to the exothermic fluid 110, the Dolby phenomenon suppressing crystal is precipitated or is directed to the inside of the heat pipe 120 to generate heat uniformly to the outside of the heat pipe 120 I can not. As a result, the performance of the heat-generating fluid 110 is deteriorated and the effect of the heat-transfer fluid 110 is not expected. Thus, the dolvization-inhibiting crystal contained in the exothermic fluid 110 circulates inside the heat pipe 120, and the heat is generated evenly outside the heat pipe 120, It works on the human body of the worker in order to produce effects such as purification of blood, increase of resistance, control of autonomic nervous system and the like.

In addition, the Dolby phenomenon suppressing crystal is intended to prevent the composition from boiling (Dolby phenomenon). When the heat generating function is provided, the composition materials are overheated to prevent the inner pressure of the heat pipe 120 from being rapidly expanded, It is possible to prevent the pipe 120 from being damaged.

Here, it is preferable that the dolvization-inhibiting crystals include at least one of boiling and non-boiling crystals and have a particle size of 1 mm or less, and they are preferably mixed and distributed evenly inside the exothermic fluid 110 .

In addition, when the amount of the Dolby phenomenon suppressing crystal is less than 1 part by weight, the number of pores for suppressing the Dolby phenomenon is remarkably small, and the overheating effect of the materials for forming the heat generating fluid 110 is extremely weak. The effect of suppressing the Dolby phenomenon increases. However, due to the fact that boiling water or boiling water has the form of crystals, the volume occupied by the hollow of the heat pipe 120 becomes large. Accordingly, when the heating fluid 110 is overheated, So that a problem arises that damage occurs.

Therefore, it is preferable that the above-mentioned Dolby phenomenon suppressing crystal has a critical meaning of 1 to 1.5 parts by weight.

In the meantime, according to the present invention, the heat pipe 120 may have a flexible synthetic resin material. For example, the outer circumferential surface of the storage container B may have a curvature or an angle may be adjusted through a synthetic resin material such as polypropylene And can be easily piped as much as possible.

Here, the heat pipe 120 has a structure in which the heat generating fluid 110 is heated by the heater 130 formed inside the tubular body made of flexible material to generate heat energy, and a seal for preventing leakage of the heat generating fluid 110 (Not shown) is joined to the end of the heat pipe 120 by means of a spring band or the like in a state of being made of a silicone or Teflon material which does not deform even at a high temperature, It is better to be crimped and fixed.

In the case where the heat pipe 120 has a synthetic resin material as described above, the heat generating fluid 110 is filled in the heat pipe 120 and heated by the heater 130 to generate heat energy The material is preferably selected from the group consisting of 4 to 12% by weight of distilled water, 88 to 96% by weight of 1,2-propyleneglycol (HOCH2CH3CHOH), 0.0042 to 0.0046% by weight of triethanolamine (C6H15NO3), methylbenzotriazole 0.00035 to 0.00045% by weight of 5-methylbenzene, C7H7N3, 0.00028 to 0.00032% by weight of sodium tripolyphosphate (Na5P3010), and the distilled water, 1,2-propylene glycol, triethanolamine, methylbenzotriazole and sodium tripolyphosphate 10 to 15 parts by weight of the nanoparticle metallic material and 5 to 10 parts by weight of the Dolby phenomenon suppressing crystal are mixed based on 100 parts by weight of the mixed composition material.

Here, 1,2-propylene glycol provides a carrier function for heat transfer and heat exchange.

Also, the triethanolamine provides a function of keeping the internal pressure of the heat pipe 120 stable so that the above-mentioned ingredients do not boil within 150 ° C and the phase change does not occur at about -40 to 150 ° C, , The upper limit of the exothermic temperature can be controlled by controlling the weight% of the triethanolamine.

In addition, methylbenzotriazole provides a function to prevent corrosion.

In addition, sodium trisphosphate provides a function of preventing foreign matter from being formed on the inner circumferential surface of the heat pipe 120.

The nanoparticle metallic material is made of at least one metal selected from gold, silver and copper having excellent thermal conductivity, and increases the heat transfer area and the heat capacity of the fluid inside the heat pipe 120 to improve the effective conductivity of the fluid compositions It is desirable to enhance the interaction and fusion at the flow area between the nanoparticle metallic material and the fluid compositions, to enhance the mixing and turbulence flow of the fluid compositions and to reduce the reverse temperature gradient of the fluid compositions by diffusion of the nanoparticle metallic material , And the size is preferably 10 nm or less.

If the amount of the metal nanoparticles is less than 10 to 15 parts by weight, the thermal conductivity largely decreases. If the amount of the metal nanoparticles exceeds the range, the thermal conductivity may not be uniformized due to precipitation or migration toward one side. At this time, since the size may have a similar phenomenon to the weight portion, it is preferable to have the critical meaning as described above.

In addition, the Dolby phenomenon suppressing crystal can prevent the heat pipe 120 from being damaged by overheating the inner pressure of the heat pipe 120 by heating the composition materials when the heat generating function is provided.

On the other hand, the above-mentioned Dolby phenomenon suppressing crystal includes at least any one of boiling water and boiling water crystals, more preferably, the above distilled water, 1,2-propylene glycol, triethanolamine, methylbenzotriazole, And 5 to 10 parts by weight based on 100 parts by weight of the mixed composition material.

Preferably, the dolvization-inhibiting crystals have a particle size of 1 mm or less. Preferably, the dolvization-inhibiting crystals are uniformly mixed and distributed within the exothermic fluid 110, and the heat pipe 120 is directly pressed by the user's weight or the like It is preferable to prevent damage such as tearing or breakage of the heat pipe 120 when a volume change occurs.

In addition, when the Dolby phenomenon suppressing crystal is less than 5 parts by weight based on 100 parts by weight of the composition of the exothermic fluid 110, the number of pores for suppressing the dolbis phenomenon is considerably small, The effect of inhibiting the Dolby phenomenon is increased. However, since the boiling point or the boiling point has a crystal form, the volume occupied by the hollow of the heat pipe 120 becomes large, The expansion rate of the heat pipe 120 is increased when the fluid 110 expands and the pressure of the fluid 110 is increased.

It is preferable that the Dolby phenomenon suppressing crystal has a critical meaning of 5 to 10 parts by weight based on 100 parts by weight of the composition material of the exothermic fluid 110.

Therefore, according to the heating means 100, when the heat pipe 120 filled with the heat generating fluid 110 is simply attached to the surface of the storage container B, the heat pipe 120 is brought into contact with the end portion or a part of the heat pipe 120 By heating the storage container B by means of the heater 130 which is simply configured, the installation and manufacturing efficiency is improved as compared with the conventional heating jacket and the like, and the storage container B ) Can be heated.

The gas discharging means F is a means including a pipe 200 for discharging the source gas to the outside together with the carrier gas after receiving the carrier gas into the storage vessel B, A source gas pipe 200-1 for allowing a carrier gas to be injected into the storage container B and a source gas pipe 200-1 for supplying or discharging a carrier gas and a source gas from the storage container B to a semiconductor manufacturing facility, 2, and the like, and each pipe 200 is formed with a pump, so that the carrier gas can be injected and the source gas can be discharged by the pumping operation.

Here, since the gas discharging means F can have a known configuration, a detailed description will be omitted.

In the meantime, in the present invention, the pipe 200 has a structure for preventing gas leakage. For this purpose, the pipe 200 is formed of carbon black-containing polytetrafluoroethylene so as to prevent acidification or deterioration due to gas, A main pipe 210 formed of a nylon synthetic fiber to protect the main pipe 210 and to insulate the gas transported into the main pipe 210 to surround the main pipe 210, A main pipe 210 and a mesh pipe 220 so as to surround the entire outer surface of the mesh pipe 220 to prevent interference with peripheral devices by the mesh pipe 220, A connecting portion 241 which is inserted into the end portion of the main pipe 210 and communicates with the inside of the main pipe 210, A connecting portion 241 and a connecting portion 242 which are integrally communicated with the main pipe 210 and which are integrally communicated with the main pipe 210 and protrude outward to supply gas supplied or supplied to the apparatus or the other pipe 200 A sleeve 240 formed integrally with the end of the main pipe 210 and the end of the mesh pipe 220 and having a sleeve portion 243 integrally formed with the end of the outer pipe 230, One end of the outer tube 230 and the outer side of the sleeve portion 243 of the sleeve 240 to connect and fix the main tube 210, the mesh tube 220 and the outer tube 230 to the sleeve 240 And a fastening member 250 fastened to the fastening member 250.

Here, the fastening member 250 includes an end portion of the main pipe 210 inserted into and fixed to the sleeve portion 243 of the sleeve 240, an end portion of the mesh pipe 220, a sleeve portion 243 of the sleeve 240, It is preferable that the outer tube 230 is formed in a cylindrical shape so as to connect the end portions of the outer tube 230 to be inspected to simultaneously and integrally press-connect and fasten.

Thus, according to the pipe 200 of the present invention, it is possible to completely block the leakage of various kinds of gas transferred into the pipe 200 such as the gas transfer hose, and to provide sufficient flexibility and durability required for installation.

The gas leakage detecting means 300 is installed at a connection portion between the pipe 200 of the gas discharging means F and the pipe 200 to visually and electrically detect whether or not the gas leaking from the connecting portion of the pipe 200 exists. (J) covering the connection part (J) while having a predetermined shape and space for covering the connection part (J), and a gas is generated from the connection part (J) A case-type mounting casing 310 for preventing leakage to the outside, a casing 310 formed inside the casing 310, which is impregnated with a reagent, dried and discolored to a specific color upon contact with gas leaked from the connection portion J A first leakage detection means 330 for detecting the leakage of the gas leaking from the connection portion J and a second leakage detection means 330 for detecting the leakage of gas from the connection portion J, 320) and the second leak detection means (330) And the first leakage sensing means 320 and the second leakage sensing means 330 are configured to maintain the shape corresponding to the shape of the inside of the casing 310 and to stably constitute the corresponding position, (340), and the like.

The casing 310 has a predetermined shape and space for covering the connection portion J and is configured to cover the connection portion J on the outside of the connection portion J and to prevent the leakage from the connection portion J A case-type mounting means for preventing the gas from leaking to the outside, a transparent or translucent synthetic resin material so that the inside can be visually confirmed from the outside, The upper and lower cases 311 and 312, the upper and lower cases 311 and 312, the upper and lower cases 311 and 312, and the upper and lower cases 311 and 312, The mounting flange 313 and the mounting flange 313 have shapes corresponding to the shapes of the mounting flange 313 and the mounting flange 313 so that the upper and lower cases 311 and 312 are mounted. Are facing each other comprises a leakage preventing member 314, such as such as O-ring or gasket to prevent leakage through the area facing the gas from the connection region (J) that leaks to the outside.

Therefore, according to the casing 310, since the connecting portion J is simply mounted while covering the connecting portion J, it is possible to prevent the gas leaking from the connecting portion J from leaking to the outside, It is possible for the external worker to confirm with the naked eye the fact that the first leakage sensing means 320 proceeds to discoloration to a specific color upon contact with the leakage liquid, thereby promptly coping with it and preventing a safety accident.

The casing 310 is configured such that the upper and lower cases 311 and 312 are coupled to each other by a coupling member penetrating through the mounting flange 313 but the mounting flange 313 may have a male- And may have a binding structure having a structure in which any one of the facing regions is coupled so as to be rotatable relative to each other and the other region is forcibly fastened when facing each other. Further, a reflection tape is further attached to the outer surfaces of the upper and lower cases 311 and 312 to provide discrimination force at night, so that the operator can easily grasp the corresponding position.

The first leak detecting means 320 is a chemical leak detecting means which is formed inside the casing 310 and changes color to a specific color when the reagent is impregnated and dried to come into contact with the liquid leaked from the connecting portion J, This excellent fiber or paper pad is produced by absorbing and drying the specially treated reagent which is harmless to the human body and treated with natural materials.

Therefore, according to the first leakage detection means 320, when leakage occurs from the connection portion J connecting the semiconductor manufacturing equipment, the color changes to a specific color upon contact with the leakage liquid, and the operator confirms this with the naked eye Thus, it is possible to prevent a safety accident by enabling quick response.

The second water leakage detection means 330 is an electric water leakage detection means that is formed inside the casing 310 and electrically senses when the liquid leaking from the connection region J is electrically contacted. It is possible to detect the contact of leaking gas through vibration, pressure, temperature, short circuit and capacitance, and to generate a corresponding electric signal to transmit it to a monitoring system including a known warning sound generating device, It is possible to enable prompt notification to the administrator who is located outside and responding to the request.

Here, the second water leakage sensing means 330 is a capacitance sensing means for sensing the contact of the leakage liquid through the capacitance. More preferably, the second leakage sensing means 330 is an electrostatic capacitive touch substrate, an electrode pattern formed on the capacitive touch substrate, A circuit board constituting a circuit wiring for electrical connection with the electrode pattern, a circuit board including a portion contacting the circuit board and the electrode pattern, and electrically connecting the circuit wiring of the circuit board and the electrode pattern in a state of electrically connecting each other A capacitance pad 331 including a contact member and a plurality of leakage liquid through holes 332 formed through the capacitance pad 331.

That is, the capacitance pad 331 can sense the leakage of liquid when it contacts the capacitive touch substrate through a change in capacitance.

The leakage hole 332 is formed to prevent the first leakage sensing means 320 from coming into contact with the leakage liquid. More specifically, when the first leakage detection means 320 and the second leakage detection means 330 are configured in the casing 310, the first leakage detection means 320 must be located on the inner surface of the casing 310 and the second leakage sensing means 330 must be located between the connection J and the first leakage sensing means 320. Accordingly, in the above-described state, when the leakage occurs from the connection portion J, the first leakage sensing means 320 can not contact the leakage water by the second leakage sensing means 330, It is preferable that the leaked liquid is brought into contact with the first leak detecting means 320 through the first leak detecting means 332.

In addition, it is preferable that the electrostatic capacitance pad 331 is electrically connected to a connector formed on one of both sides of the lower case 312. In this case, the connector includes a known alarm sound generating device or the like It is preferable to have a state of being electrically connected to a communication means for making a wired or wireless connection to the monitoring system.

Here, the communicating means is electrically connected to the electrostatic capacity pad 331, and when the sensing signal is generated, it guides the external monitoring system or the manager through wired / wireless communication, and the alarm sound generating means A warning sound is generated to guide the manager or the operator. The communication means, the warning sound generating means and the monitoring system using the warning means are well known in the art and will not be described in detail.

Therefore, according to the second leakage detection means 330, when leakage occurs from the connection portion J of the pipes 200 connected between the semiconductor manufacturing equipments, It is possible to cause an external warning to be generated, thereby enabling rapid countermeasures and preventing safety accidents.

The guide mold 340 may be formed in at least one of the first leakage sensing means 320 and the second leakage sensing means 330 so that the first leakage sensing means 320 and the second leakage sensing means 330 are disposed in the casing (320) having a flat panel shape and a second leakage sensing means (330) having a flat panel shape are provided as seating means for maintaining a shape corresponding to the shape of the inside of the container (310) (320) and the second leakage sensing means (330) so as to be positioned on the inner surface of the casing (310) with a semicylindrical or cylindrical shape and spaced a predetermined distance from the connection portion (J) And a pair of mold frames 342 each having a semicircular or annular shape having an insertion groove 341 for inserting an edge.

That is, according to the guide mold 340, the first leakage detection means 320 having a flat shape and the second leakage detection means 330 having the lateral sides thereof are respectively provided with a semicircular or annular mold frame 342 It can be stably positioned on the surface of the lower case 312 or the upper / lower cases 311 and 312 in a state of being hollowed into semi-cylindrical or cylindrical shape inserted into the insertion groove 341.

It is preferable that the inner surface of the lower case 312 or the upper and lower cases 311 and 312 is further provided with a mounting groove or a latch for allowing the mold frame 342 to be fitted or held in a stable state.

The guide mold 340 may be made of a synthetic resin material having a plurality of exposed holes 343a formed between the first leak sensing means 320 and the inner surface of the casing 310, The filter panel 343 made of a nonwoven fabric or latex is further provided so that the discolored portion of the first leak sensing means 320 is exposed to the outside through the exposing hole 343a so that the leaked portion is not aesthetically bad.

Here, the filter panel 343 is disposed in contact with one surface of the first leakage sensing means 320 so that when the first leakage sensing means 320 is changed in color by contact with the leakage liquid, the liquid is supplied to the first leakage sensing means 320 ), It is preferable that the leaked liquid which has not been absorbed is absorbed.

Therefore, according to the guide mold 340, the first leakage sensing means 320 and the second leakage sensing means 330, which are positioned and configured in the casing 310, .

According to the gas leakage detecting means 300 having the above-described configuration, the first leak detecting means 320, which reacts in a color-changing reaction upon contact with the leakage liquid, and the second leak detecting means 320, The means 330 is mounted on the connecting portion J while covering the connecting portion J of the pipes 200 while being accommodated in the casing 310 so that the gas leakage water It is possible to prompt the operator to perceive it through the visual and audible alarms and audible alarms, so that prompt action can be taken.

Hereinafter, the operation of the gas supply apparatus for a semiconductor manufacturing facility having the above-described structure will be described.

First, in a state in which the source gas is filled in the storage vessel B, the storage vessel B is heated to a predetermined temperature by the heating means 100 to convert the source gas from the liquid state to the gaseous state.

Here, the heating means 100 can be simply constituted by installing the heater 130 at one end or a part of the heat pipe 120 configured to be in contact with or wrap around the whole or a part of the outer surface of the storage container B At this time, when heat is transferred from the heater 130 to one end or a part of the heat pipe 120, the heat-generating fluid filled in the heat pipe 120 is heated to a predetermined temperature, and the storage container B is heated.

Thereafter, the carrier gas is injected into the storage container B by the gas discharging means F, and at the same time, the gaseous source gas is transported and supplied through the pipe 200 connected to the semiconductor manufacturing facility for various purposes and purposes And the process is carried out.

Here, the pipe 200 prevents the chemical reaction of the main pipe 210 with the gas, so that the steady-state gas can be always transferred, thereby preventing deterioration of the main pipe 210, The pipe 220 and the outer pipe 230 each have a sufficient flexibility so that the degree of freedom of installation of the entire gas transfer hose is ensured and the leakage of the gas is completely prevented by blocking the gap due to the fastening member.

Since the gas leakage detecting means 300 is provided at the connection portion J of the pipe 200 and the pipe 200, when gas is leaked due to a mistake during connection of the connection portion J, So that it can be confirmed electrically so that the operator can promptly cope with it.

The heat pipe 120 is installed on the outer surface of the storage container B and the heater 130 is installed at the end of the heat pipe 120. In this case, The heating means 100 can be simplified and the storage vessel B can be heated by the heat generating fluid 110 of the heat pipe 120 which is exothermically operated by the heat of the heater 130.

Further, gas leakage of the gas transfer hose of the gas discharging means (F) can be completely prevented.

The gas leakage sensing means 300 may be mounted on the joint J between the pipe 200 and the pipe 200 such as a gas transfer hose to visually and electrically confirm gas leakage.

 Although the present invention has been described with reference to the specific embodiments, various modifications may be made without departing from the scope of the present invention. Accordingly, the scope of the invention is not to be determined by the embodiments described, but should be determined by equivalents of the claims and the claims.

Claims (7)

A housing (H) providing an installation space;
A storage container (B) installed inside the housing (H) and storing the source gas;
The thermal energy is supplied to the heat pipe 120 and the heat pipe 120 which are installed on the surface of the storage container B and the heat generating fluid 110 is filled therein, Heating means (100) comprising a heater (130) for heating the heating means (100); And
And a gas discharging means (F) including a pipe (200) for discharging the source gas to the outside together with the carrier gas after receiving the carrier gas into the storage container (B)
The heat pipe (120)
A plurality of spiral structures are arranged on the surface of the storage container B at regular intervals or the spiral structure surrounds the surface of the storage container B,
A tube made of metal, the inside of which is sealed and heated at one or a part thereof by the heater 130;
And a heating fluid (110) filled in the tubular body and heated by the heater (130) to generate heat energy,
The exothermic fluid (110)
50 to 62 parts by weight of acetone, 10 to 15 parts by weight of ethanol, 15 to 20 parts by weight of distilled water, 5 to 10 parts by weight of potassium dichromate, 3 to 6 parts by weight of sodium perborate, 10 to 15 parts by weight of nanoparticle metallic material, 1 to 1.5 parts by weight of a crystal, and 0.005 parts by weight of a surfactant based on 1 part by weight of the dolbis phenomenon suppressing crystals. 2. A container according to claim 1, wherein the storage container (B)
A processor tank for supplying a source gas to a manufacturing facility, and a bulk tank for filling a source gas in the processor tank when the source gas is exhausted,
And a pipe 200 on the side of the processor tank where the source gas is moved from the bulk tank is constituted by a carrier gas removing valve (not shown). delete delete delete delete 2. The apparatus of claim 1, wherein the pipe (200)
A main pipe 210 formed of carbon black-containing polytetrafluoroethylene and formed of a corrugated tube;
A mesh tube 220 formed of nylon synthetic fibers surrounding the main pipe 210 to protect the main pipe 210 and insulate the gas transported into the main pipe 210;
An outer tube 230 formed of silicone synthetic fiber rubber and formed to surround the entire outer surface of the mesh tube 220 to protect the main tube 210 and the mesh tube 220 and prevent interference of the peripheral device by the mesh tube 220, and;
A connecting portion 241 which is inserted into the end portion of the main pipe 210 and is integrally communicated with the connecting portion 241 and communicated with the inside of the main pipe 210, The end portion of the main pipe 210 and the end portion of the mesh pipe 220 are inserted and fixed and the outer pipe 230 is integrally formed with the connecting portion 242, the connecting portion 241 and the connecting portion 242, A sleeve 240 integrally having a sleeve portion 243 to which an end of the sleeve 240 is inserted;
And is fastened to one end of the outer tube 230 and the outer side of the sleeve portion 243 of the sleeve 240 to connect and fix the main tube 210, the mesh tube 220 and the outer tube 230 to the sleeve 240 And a fastening member (250).

Images