KR101891263B1 - Novel hetero-cyclic compound and organic light emitting device comprising the same - Google Patents
Novel hetero-cyclic compound and organic light emitting device comprising the same Download PDFInfo
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- KR101891263B1 KR101891263B1 KR1020170091755A KR20170091755A KR101891263B1 KR 101891263 B1 KR101891263 B1 KR 101891263B1 KR 1020170091755 A KR1020170091755 A KR 1020170091755A KR 20170091755 A KR20170091755 A KR 20170091755A KR 101891263 B1 KR101891263 B1 KR 101891263B1
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- light emitting
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- 150000002391 heterocyclic compounds Chemical class 0.000 title abstract description 4
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- 238000000034 method Methods 0.000 claims description 14
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- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
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- 239000001257 hydrogen Substances 0.000 claims description 5
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- 125000002877 alkyl aryl group Chemical group 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
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- 125000003710 aryl alkyl group Chemical group 0.000 description 3
- 125000001769 aryl amino group Chemical group 0.000 description 3
- IOJUPLGTWVMSFF-UHFFFAOYSA-N benzothiazole Chemical group C1=CC=C2SC=NC2=C1 IOJUPLGTWVMSFF-UHFFFAOYSA-N 0.000 description 3
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- 238000000576 coating method Methods 0.000 description 3
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- 238000004770 highest occupied molecular orbital Methods 0.000 description 3
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
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- ILAHWRKJUDSMFH-UHFFFAOYSA-N boron tribromide Chemical compound BrB(Br)Br ILAHWRKJUDSMFH-UHFFFAOYSA-N 0.000 description 2
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- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 2
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- 125000004973 1-butenyl group Chemical group C(=CCC)* 0.000 description 1
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- 125000001567 quinoxalinyl group Chemical group N1=C(C=NC2=CC=CC=C12)* 0.000 description 1
- YYMBJDOZVAITBP-UHFFFAOYSA-N rubrene Chemical compound C1=CC=CC=C1C(C1=C(C=2C=CC=CC=2)C2=CC=CC=C2C(C=2C=CC=CC=2)=C11)=C(C=CC=C2)C2=C1C1=CC=CC=C1 YYMBJDOZVAITBP-UHFFFAOYSA-N 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- 239000012312 sodium hydride Substances 0.000 description 1
- 229910000104 sodium hydride Inorganic materials 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 150000003413 spiro compounds Chemical class 0.000 description 1
- 125000003003 spiro group Chemical group 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 125000005504 styryl group Chemical group 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 125000004434 sulfur atom Chemical group 0.000 description 1
- 238000010345 tape casting Methods 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- JLBRGNFGBDNNSF-UHFFFAOYSA-N tert-butyl(dimethyl)borane Chemical group CB(C)C(C)(C)C JLBRGNFGBDNNSF-UHFFFAOYSA-N 0.000 description 1
- 125000001113 thiadiazolyl group Chemical group 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- IBBLKSWSCDAPIF-UHFFFAOYSA-N thiopyran Chemical compound S1C=CC=C=C1 IBBLKSWSCDAPIF-UHFFFAOYSA-N 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
- KWQNQSDKCINQQP-UHFFFAOYSA-K tri(quinolin-8-yloxy)gallane Chemical compound C1=CN=C2C(O[Ga](OC=3C4=NC=CC=C4C=CC=3)OC=3C4=NC=CC=C4C=CC=3)=CC=CC2=C1 KWQNQSDKCINQQP-UHFFFAOYSA-K 0.000 description 1
- 150000003852 triazoles Chemical class 0.000 description 1
- 125000001425 triazolyl group Chemical group 0.000 description 1
- LALRXNPLTWZJIJ-UHFFFAOYSA-N triethylborane Chemical group CCB(CC)CC LALRXNPLTWZJIJ-UHFFFAOYSA-N 0.000 description 1
- WXRGABKACDFXMG-UHFFFAOYSA-N trimethylborane Chemical group CB(C)C WXRGABKACDFXMG-UHFFFAOYSA-N 0.000 description 1
- 125000000026 trimethylsilyl group Chemical group [H]C([H])([H])[Si]([*])(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- MXSVLWZRHLXFKH-UHFFFAOYSA-N triphenylborane Chemical group C1=CC=CC=C1B(C=1C=CC=CC=1)C1=CC=CC=C1 MXSVLWZRHLXFKH-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- HTPBWAPZAJWXKY-UHFFFAOYSA-L zinc;quinolin-8-olate Chemical compound [Zn+2].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 HTPBWAPZAJWXKY-UHFFFAOYSA-L 0.000 description 1
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Abstract
본 발명은 신규한 헤테로고리 화합물 및 이를 포함하는 유기발광 소자를 제공한다. The present invention provides a novel heterocyclic compound and an organic light emitting device comprising the same.
Description
본 발명은 신규한 헤테로고리 화합물 및 이를 포함하는 유기 발광 소자에 관한 것이다. The present invention relates to a novel heterocyclic compound and an organic light emitting device comprising the same.
일반적으로 유기 발광 현상이란 유기 물질을 이용하여 전기에너지를 빛에너지로 전환시켜주는 현상을 말한다. 유기 발광 현상을 이용하는 유기 발광 소자는 넓은 시야각, 우수한 콘트라스트, 빠른 응답 시간을 가지며, 휘도, 구동 전압 및 응답 속도 특성이 우수하여 많은 연구가 진행되고 있다. In general, organic light emission phenomenon refers to a phenomenon in which an organic material is used to convert electric energy into light energy. The organic light emitting device using the organic light emitting phenomenon has a wide viewing angle, excellent contrast, fast response time, excellent characteristics of luminance, driving voltage and response speed, and much research has been conducted.
유기 발광 소자는 일반적으로 양극과 음극 및 상기 양극과 음극 사이에 유기물 층을 포함하는 구조를 가진다. 상기 유기물 층은 유기 발광 소자의 효율과 안정성을 높이기 위하여 각기 다른 물질로 구성된 다층의 구조로 이루어진 경우가 많으며, 예컨대 정공주입층, 정공수송층, 발광층, 전자수송층, 전자주입층 등으로 이루어질 수 있다. 이러한 유기 발광 소자의 구조에서 두 전극 사이에 전압을 걸어주게 되면 양극에서는 정공이, 음극에서는 전자가 유기물층에 주입되게 되고, 주입된 정공과 전자가 만났을 때 엑시톤(exciton)이 형성되며, 이 엑시톤이 다시 바닥상태로 떨어질 때 빛이 나게 된다. The organic light emitting device generally has a structure including an anode and a cathode, and an organic layer between the anode and the cathode. The organic material layer may have a multilayer structure composed of different materials in order to improve the efficiency and stability of the organic light emitting device. For example, the organic material layer may include a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer. When a voltage is applied between the two electrodes in the structure of such an organic light emitting device, holes are injected in the anode, electrons are injected into the organic layer in the cathode, excitons are formed when injected holes and electrons meet, When it falls back to the ground state, the light comes out.
상기와 같은 유기 발광 소자에 사용되는 유기물에 대하여 새로운 재료의 개발이 지속적으로 요구되고 있다.There is a continuing need for the development of new materials for the organic materials used in such organic light emitting devices.
본 발명은 신규한 헤테로고리 화합물 화합물 및 이를 포함하는 유기 발광 소자에 관한 것이다. The present invention relates to a novel heterocyclic compound compound and an organic light emitting device comprising the same.
본 발명은 하기 화학식 1로 표시되는 화합물을 제공한다.The present invention provides a compound represented by the following formula (1).
[화학식 1][Chemical Formula 1]
상기 화학식 1에서, In Formula 1,
X1 및 X2는 각각 독립적으로, NR1, CR2R3, SiR4R5, S, 또는 O이고,
A는 피리미딘 고리이고, X 1 and X 2 are each independently NR 1 , CR 2 R 3 , SiR 4 R 5 , S, or O,
A is a pyrimidine ring,
L은 단일 결합, 치환 또는 비치환된 C6-60 아릴렌; 또는 치환 또는 비치환된 O, N, Si 및 S 중 1개 이상을 포함하는 C2-60 헤테로아릴렌이고,L is a single bond, substituted or unsubstituted C 6-60 arylene; Or C 2-60 heteroarylene containing at least one of substituted or unsubstituted O, N, Si and S,
Ar1은 수소; 중수소; 할로겐; 치환 또는 비치환된 C1-40 알킬; 치환 또는 비치환된 C3-60 사이클로알킬; 치환 또는 비치환된 C2-40 알케닐; 치환 또는 비치환된 C6-60 아릴; 또는 치환 또는 비치환된 O, N, Si 및 S 중 1개 이상을 포함하는 C2-60 헤테로아릴이고, Ar 1 is hydrogen; heavy hydrogen; halogen; Substituted or unsubstituted C 1-40 alkyl; Substituted or unsubstituted C 3-60 cycloalkyl; Substituted or unsubstituted C 2-40 alkenyl; Substituted or unsubstituted C 6-60 aryl; Or substituted or unsubstituted C 2-60 heteroaryl comprising at least one of O, N, Si and S,
Ar2는 하기로 구성되는 군으로부터 선택되는 어느 하나이고,Ar 2 is any one selected from the group consisting of:
X3 및 X4는 각각 독립적으로, NR1, CR2R3, SiR4R5, S, 또는 O이고,X 3 and X 4 are each independently NR 1 , CR 2 R 3 , SiR 4 R 5 , S, or O,
R1 내지 R7은 각각 독립적으로 수소; 중수소; 할로겐; 니트릴; 니트로; 아미노; 치환 또는 비치환된 C1-60 알킬; 치환 또는 비치환된 C3-60 사이클로알킬; 치환 또는 비치환된 C2-60 알케닐기; 치환 또는 비치환된 C6-60 아릴; 또는 치환 또는 비치환된 O, N, Si 및 S 중 1개 이상을 포함하는 C2-60 헤테로고리기이고,R 1 to R 7 are each independently hydrogen; heavy hydrogen; halogen; Nitrile; Nitro; Amino; Substituted or unsubstituted C 1-6 alkyl; Substituted or unsubstituted C 3-60 cycloalkyl; A substituted or unsubstituted C 2-60 alkenyl group; Substituted or unsubstituted C 6-60 aryl; Or a C 2-60 heterocyclic group containing at least one of substituted or unsubstituted O, N, Si and S,
n 및 m 각각 독립적으로 0 내지 4의 정수이다. n and m each independently represent an integer of 0 to 4;
또한, 본 발명은 제1 전극; 상기 제1 전극과 대향하여 구비된 제2 전극; 및 상기 제1 전극과 상기 제2 전극 사이에 구비된 1층 이상의 유기물 층을 포함하는 유기 발광 소자로서, 상기 유기물층 중 1층 이상은 상기 화학식 1로 표시되는 화합물을 포함하는, 유기 발광 소자를 제공한다.The present invention also provides a plasma display panel comprising: a first electrode; A second electrode facing the first electrode; And at least one organic layer disposed between the first electrode and the second electrode, wherein at least one of the organic layers includes a compound represented by
상술한 화학식 1로 표시되는 화합물은 유기 발광 소자의 유기물 층의 재료로서 사용될 수 있으며, 유기 발광 소자에서 효율의 향상, 낮은 구동전압 및/또는 수명 특성을 향상시킬 수 있다. 특히, 상술한 화학식 1로 표시되는 화합물은 정공주입, 정공수송, 정공주입 및 수송, 발광, 전자수송, 또는 전자주입 재료로 사용될 수 있다.The compound represented by the general formula (1) can be used as a material of an organic material layer of an organic light emitting device and can improve the efficiency, the driving voltage and / or the lifetime of the organic light emitting device. In particular, the compound represented by Formula 1 can be used as a hole injecting, hole transporting, hole injecting and transporting, light emitting, electron transporting, or electron injecting material.
도 1은 기판(1), 양극(2), 발광층(3), 음극(4)으로 이루어진 유기 발광 소자의 예를 도시한 것이다.
도 2는 기판 (1), 양극(2), 정공주입층(5), 정공수송층(6), 발광층(7), 전자수송층(8) 및 음극(4)로 이루어진 유기 발광 소자의 예를 도시한 것이다.Fig. 1 shows an example of an organic light-emitting device comprising a
2 shows an example of an organic light emitting element comprising a
이하, 본 발명의 이해를 돕기 위하여 보다 상세히 설명한다.Hereinafter, the present invention will be described in detail in order to facilitate understanding of the present invention.
본 발명은 상기 화학식 1로 표시되는 화합물을 제공한다. The present invention provides a compound represented by the above formula (1).
본 명세서에서, 는 다른 치환기에 연결되는 결합을 의미한다. In the present specification, Quot; means a bond connected to another substituent.
본 명세서에서 "치환 또는 비치환된" 이라는 용어는 중수소; 할로겐기; 니트릴기; 니트로기; 히드록시기; 카보닐기; 에스테르기; 이미드기; 아미노기; 포스핀옥사이드기; 알콕시기; 아릴옥시기; 알킬티옥시기; 아릴티옥시기; 알킬술폭시기; 아릴술폭시기; 실릴기; 붕소기; 알킬기; 사이클로알킬기; 알케닐기; 아릴기; 아르알킬기; 아르알케닐기; 알킬아릴기; 알킬아민기; 아랄킬아민기; 헤테로아릴아민기; 아릴아민기; 아릴포스핀기; 또는 N, O 및 S 원자 중 1개 이상을 포함하는 헤테로고리기로 이루어진 군에서 선택된 1개 이상의 치환기로 치환 또는 비치환되거나, 상기 예시된 치환기 중 2 이상의 치환기가 연결된 치환 또는 비치환된 것을 의미한다. 예컨대, "2 이상의 치환기가 연결된 치환기"는 비페닐기일 수 있다. 즉, 비페닐기는 아릴기일 수도 있고, 2개의 페닐기가 연결된 치환기로 해석될 수 있다.As used herein, the term " substituted or unsubstituted " A halogen group; A nitrile group; A nitro group; A hydroxy group; A carbonyl group; An ester group; Imide; An amino group; Phosphine oxide groups; An alkoxy group; An aryloxy group; An alkyloxy group; Arylthioxy group; An alkylsulfoxy group; Arylsulfoxy group; Silyl group; Boron group; An alkyl group; Cycloalkyl groups; An alkenyl group; An aryl group; Aralkyl groups; An aralkenyl group; An alkylaryl group; An alkylamine group; An aralkylamine group; A heteroarylamine group; An arylamine group; Arylphosphine groups; Or a heterocyclic group containing at least one of N, O and S atoms, or a substituted or unsubstituted group in which at least two of the above-exemplified substituents are connected to each other . For example, the "substituent group to which two or more substituents are connected" may be a biphenyl group. That is, the biphenyl group may be an aryl group, and may be interpreted as a substituent in which two phenyl groups are connected.
본 명세서에서 카보닐기의 탄소수는 특별히 한정되지 않으나, 탄소수 1 내지 40인 것이 바람직하다. 구체적으로 하기와 같은 구조의 화합물이 될 수 있으나, 이에 한정되는 것은 아니다.In the present specification, the carbon number of the carbonyl group is not particularly limited, but it is preferably 1 to 40 carbon atoms. Specifically, it may be a compound having the following structure, but is not limited thereto.
본 명세서에 있어서, 에스테르기는 에스테르기의 산소가 탄소수 1 내지 25의 직쇄, 분지쇄 또는 고리쇄 알킬기 또는 탄소수 6 내지 25의 아릴기로 치환될 수 있다. 구체적으로, 하기 구조식의 화합물이 될 수 있으나, 이에 한정되는 것은 아니다.In the present specification, the ester group may be substituted with a straight-chain, branched or cyclic alkyl group having 1 to 25 carbon atoms or an aryl group having 6 to 25 carbon atoms in the ester group. Specifically, it may be a compound of the following structural formula, but is not limited thereto.
본 명세서에 있어서, 이미드기의 탄소수는 특별히 한정되지 않으나, 탄소수 1 내지 25인 것이 바람직하다. 구체적으로 하기와 같은 구조의 화합물이 될 수 있으나, 이에 한정되는 것은 아니다.In the present specification, the number of carbon atoms of the imide group is not particularly limited, but is preferably 1 to 25 carbon atoms. Specifically, it may be a compound having the following structure, but is not limited thereto.
본 명세서에 있어서, 실릴기는 구체적으로 트리메틸실릴기, 트리에틸실릴기, t-부틸디메틸실릴기, 비닐디메틸실릴기, 프로필디메틸실릴기, 트리페닐실릴기, 디페닐실릴기, 페닐실릴기 등이 있으나 이에 한정되지 않는다. In the present specification, the silyl group specifically includes a trimethylsilyl group, a triethylsilyl group, a t-butyldimethylsilyl group, a vinyldimethylsilyl group, a propyldimethylsilyl group, a triphenylsilyl group, a diphenylsilyl group, But are not limited thereto.
본 명세서에 있어서, 붕소기는 구체적으로 트리메틸붕소기, 트리에틸붕소기, t-부틸디메틸붕소기, 트리페닐붕소기, 페닐붕소기 등이 있으나 이에 한정되지 않는다.In the present specification, the boron group specifically includes, but is not limited to, a trimethylboron group, a triethylboron group, a t-butyldimethylboron group, a triphenylboron group, and a phenylboron group.
본 명세서에 있어서, 할로겐기의 예로는 불소, 염소, 브롬 또는 요오드가 있다.In the present specification, examples of the halogen group include fluorine, chlorine, bromine or iodine.
본 명세서에 있어서, 상기 알킬기는 직쇄 또는 분지쇄일 수 있고, 탄소수는 특별히 한정되지 않으나 1 내지 40인 것이 바람직하다. 일 실시상태에 따르면, 상기 알킬기의 탄소수는 1 내지 20이다. 또 하나의 실시상태에 따르면, 상기 알킬기의 탄소수는 1 내지 10이다. 또 하나의 실시상태에 따르면, 상기 알킬기의 탄소수는 1 내지 6이다. 알킬기의 구체적인 예로는 메틸, 에틸, 프로필, n-프로필, 이소프로필, 부틸, n-부틸, 이소부틸, tert-부틸, sec-부틸, 1-메틸-부틸, 1-에틸-부틸, 펜틸, n-펜틸, 이소펜틸, 네오펜틸, tert-펜틸, 헥실, n-헥실, 1-메틸펜틸, 2-메틸펜틸, 4-메틸-2-펜틸, 3,3-디메틸부틸, 2-에틸부틸, 헵틸, n-헵틸, 1-메틸헥실, 사이클로펜틸메틸,사이클로헥틸메틸, 옥틸, n-옥틸, tert-옥틸, 1-메틸헵틸, 2-에틸헥실, 2-프로필펜틸, n-노닐, 2,2-디메틸헵틸, 1-에틸-프로필, 1,1-디메틸-프로필, 이소헥실, 2-메틸펜틸, 4-메틸헥실, 5-메틸헥실 등이 있으나, 이들에 한정되지 않는다.In the present specification, the alkyl group may be linear or branched, and the number of carbon atoms is not particularly limited, but is preferably 1 to 40. According to one embodiment, the alkyl group has 1 to 20 carbon atoms. According to another embodiment, the alkyl group has 1 to 10 carbon atoms. According to another embodiment, the alkyl group has 1 to 6 carbon atoms. Specific examples of the alkyl group include a methyl group, an ethyl group, a propyl group, an isopropyl group, a n-butyl group, an isobutyl group, a tert-butyl group, But are not limited to, pentyl, isopentyl, neopentyl, tert-pentyl, hexyl, n-hexyl, 1-methylpentyl, , n-heptyl, 1-methylhexyl, cyclopentylmethyl, cyclohexylmethyl, octyl, n-octyl, tert-octyl, 1-methylheptyl, But are not limited to, dimethylheptyl, 1-ethyl-propyl, 1,1-dimethyl-propyl, isohexyl, 2-methylpentyl, 4-methylhexyl and 5-methylhexyl.
본 명세서에 있어서, 상기 알케닐기는 직쇄 또는 분지쇄일 수 있고, 탄소수는 특별히 한정되지 않으나, 2 내지 40인 것이 바람직하다. 일 실시상태에 따르면, 상기 알케닐기의 탄소수는 2 내지 20이다. 또 하나의 실시상태에 따르면, 상기 알케닐기의 탄소수는 2 내지 10이다. 또 하나의 실시상태에 따르면, 상기 알케닐기의 탄소수는 2 내지 6이다. 구체적인 예로는 비닐, 1-프로페닐, 이소프로페닐, 1-부테닐, 2-부테닐, 3-부테닐, 1-펜테닐, 2-펜테닐, 3-펜테닐, 3-메틸-1-부테닐, 1,3-부타디에닐, 알릴, 1-페닐비닐-1-일, 2-페닐비닐-1-일, 2,2-디페닐비닐-1-일, 2-페닐-2-(나프틸-1-일)비닐-1-일, 2,2-비스(디페닐-1-일)비닐-1-일, 스틸베닐기, 스티레닐기 등이 있으나 이들에 한정되지 않는다.In the present specification, the alkenyl group may be straight-chain or branched, and the number of carbon atoms is not particularly limited, but is preferably 2 to 40. According to one embodiment, the alkenyl group has 2 to 20 carbon atoms. According to another embodiment, the alkenyl group has 2 to 10 carbon atoms. According to another embodiment, the alkenyl group has 2 to 6 carbon atoms. Specific examples include vinyl, 1-propenyl, isopropenyl, 1-butenyl, 2-butenyl, 3-butenyl, 1-pentenyl, Butenyl, allyl, 1-phenylvinyl-1-yl, 2-phenylvinyl-1-yl, (Diphenyl-1-yl) vinyl-1-yl, stilbenyl, stilenyl, and the like.
본 명세서에 있어서, 사이클로알킬기는 특별히 한정되지 않으나, 탄소수 3 내지 60인 것이 바람직하며, 일 실시상태에 따르면, 상기 사이클로알킬기의 탄소수는 3 내지 30이다. 또 하나의 실시상태에 따르면, 상기 사이클로알킬기의 탄소수는 3 내지 20이다. 또 하나의 실시상태에 따르면, 상기 사이클로알킬기의 탄소수는 3 내지 6이다. 구체적으로 사이클로프로필, 사이클로부틸, 사이클로펜틸, 3-메틸사이클로펜틸, 2,3-디메틸사이클로펜틸, 사이클로헥실, 3-메틸사이클로헥실, 4-메틸사이클로헥실, 2,3-디메틸사이클로헥실, 3,4,5-트리메틸사이클로헥실, 4-tert-부틸사이클로헥실, 사이클로헵틸, 사이클로옥틸 등이 있으나, 이에 한정되지 않는다.In the present specification, the cycloalkyl group is not particularly limited, but preferably has 3 to 60 carbon atoms. According to one embodiment, the cycloalkyl group has 3 to 30 carbon atoms. According to another embodiment, the cycloalkyl group has 3 to 20 carbon atoms. According to another embodiment, the cycloalkyl group has 3 to 6 carbon atoms. Specific examples include cyclopropyl, cyclobutyl, cyclopentyl, 3-methylcyclopentyl, 2,3-dimethylcyclopentyl, cyclohexyl, 3-methylcyclohexyl, 4-methylcyclohexyl, 2,3- 4,5-trimethylcyclohexyl, 4-tert-butylcyclohexyl, cycloheptyl, cyclooctyl, and the like, but are not limited thereto.
본 명세서에 있어서, 아릴기는 특별히 한정되지 않으나 탄소수 6 내지 60인 것이 바람직하며, 단환식 아릴기 또는 다환식 아릴기일 수 있다. 일 실시상태에 따르면, 상기 아릴기의 탄소수는 6 내지 30이다. 일 실시상태에 따르면, 상기 아릴기의 탄소수는 6 내지 20이다. 상기 아릴기가 단환식 아릴기로는 페닐기, 바이페닐기, 터페닐기 등이 될 수 있으나, 이에 한정되는 것은 아니다. 상기 다환식 아릴기로는 나프틸기, 안트라세닐기, 페난트릴기, 파이레닐기, 페릴레닐기, 크라이세닐기, 플루오레닐기 등이 될 수 있으나, 이에 한정되는 것은 아니다.In the present specification, the aryl group is not particularly limited, but preferably has 6 to 60 carbon atoms, and may be a monocyclic aryl group or a polycyclic aryl group. According to one embodiment, the aryl group has 6 to 30 carbon atoms. According to one embodiment, the aryl group has 6 to 20 carbon atoms. The aryl group may be a phenyl group, a biphenyl group, a terphenyl group or the like as the monocyclic aryl group, but is not limited thereto. Examples of the polycyclic aryl group include, but are not limited to, a naphthyl group, an anthracenyl group, a phenanthryl group, a pyrenyl group, a perylenyl group, a klycenyl group and a fluorenyl group.
본 명세서에 있어서, 플루오레닐기는 치환될 수 있고, 치환기 2개가 서로 결합하여 스피로 구조를 형성할 수 있다. 상기 플루오레닐기가 치환되는 경우, 등이 될 수 있다. 다만, 이에 한정되는 것은 아니다.In the present specification, a fluorenyl group may be substituted, and two substituents may be bonded to each other to form a spiro structure. When the fluorenyl group is substituted, And the like. However, the present invention is not limited thereto.
본 명세서에 있어서, 헤테로고리기는 이종 원소로 O, N, Si 및 S 중 1개 이상을 포함하는 헤테로고리기로서, 탄소수는 특별히 한정되지 않으나, 탄소수 2 내지 60인 것이 바람직하다. 헤테로고리기의 예로는 티오펜기, 퓨란기, 피롤기, 이미다졸기, 티아졸기, 옥사졸기, 옥사디아졸기, 트리아졸기, 피리딜기, 비피리딜기, 피리미딜기, 트리아진기, 트리아졸기, 아크리딜기, 피리다진기, 피라지닐기, 퀴놀리닐기, 퀴나졸린기, 퀴녹살리닐기, 프탈라지닐기, 피리도 피리미디닐기, 피리도 피라지닐기, 피라지노 피라지닐기, 이소퀴놀린기, 인돌기, 카바졸기, 벤조옥사졸기, 벤조이미다졸기, 벤조티아졸기, 벤조카바졸기, 벤조티오펜기, 디벤조티오펜기, 벤조퓨라닐기, 페난쓰롤린기(phenanthroline), 티아졸릴기, 이소옥사졸릴기, 옥사디아졸릴기, 티아디아졸릴기, 벤조티아졸릴기, 페노티아지닐기 및 디벤조퓨라닐기 등이 있으나, 이들에만 한정되는 것은 아니다.In the present specification, the heterocyclic group is a hetero ring group containing at least one of O, N, Si and S as a hetero atom, and the number of carbon atoms is not particularly limited, but is preferably 2 to 60 carbon atoms. Examples of the heterocyclic group include a thiophene group, a furane group, a furyl group, an imidazole group, a thiazole group, an oxazole group, an oxadiazole group, a triazole group, a pyridyl group, a bipyridyl group, a pyrimidyl group, A pyridazinyl group, a pyrazinopyrazinyl group, an isoquinoline group, a pyrazinyl group, a pyrazinyl group, a pyrazinyl group, a pyrazinyl group, a quinolinyl group, a quinazolinyl group, a quinoxalinyl group, a phthalazinyl group, a pyridopyrimidinyl group, , An indole group, a carbazole group, a benzoxazole group, a benzoimidazole group, a benzothiazole group, a benzocarbazole group, a benzothiophene group, a dibenzothiophene group, a benzofuranyl group, a phenanthroline, An isoxazolyl group, an oxadiazolyl group, a thiadiazolyl group, a benzothiazolyl group, a phenothiazinyl group, and a dibenzofuranyl group, but is not limited thereto.
본 명세서에 있어서, 아르알킬기, 아르알케닐기, 알킬아릴기, 아릴아민기 중의 아릴기는 전술한 아릴기의 예시와 같다. 본 명세서에 있어서, 아르알킬기, 알킬아릴기, 알킬아민기 중 알킬기는 전술한 알킬기의 예시와 같다. 본 명세서에 있어서, 헤테로아릴아민 중 헤테로아릴은 전술한 헤테로고리기에 관한 설명이 적용될 수 있다. 본 명세서에 있어서, 아르알케닐기 중 알케닐기는 전술한 알케닐기의 예시와 같다. 본 명세서에 있어서, 아릴렌은 2가기인 것을 제외하고는 전술한 아릴기에 관한 설명이 적용될 수 있다. 본 명세서에 있어서, 헤테로아릴렌은 2가기인 것을 제외하고는 전술한 헤테로고리기에 관한 설명이 적용될 수 있다. 본 명세서에 있어서, 탄화수소 고리는 1가기가 아니고, 2개의 치환기가 결합하여 형성한 것을 제외하고는 전술한 아릴기 또는 사이클로알킬기에 관한 설명이 적용될 수 있다. 본 명세서에 있어서, 헤테로고리는 1가기가 아니고, 2개의 치환기가 결합하여 형성한 것을 제외하고는 전술한 헤테로고리기에 관한 설명이 적용될 수 있다.In the present specification, the aryl group in the aralkyl group, the aralkenyl group, the alkylaryl group and the arylamine group is the same as the aforementioned aryl group. In the present specification, the alkyl group in the aralkyl group, the alkylaryl group, and the alkylamine group is the same as the alkyl group described above. In the present specification, the heteroaryl among the heteroarylamines can be applied to the aforementioned heterocyclic group. In the present specification, the alkenyl group in the aralkenyl group is the same as the above-mentioned alkenyl group. In the present specification, the description of the aryl group described above can be applied except that arylene is a divalent group. In the present specification, the description of the above-mentioned heterocyclic group can be applied except that the heteroarylene is a divalent group. In the present specification, the description of the above-mentioned aryl group or cycloalkyl group can be applied except that the hydrocarbon ring is not a monovalent group and two substituents are bonded to each other. In the present specification, the description of the above-mentioned heterocyclic group can be applied except that the heterocyclic ring is not a monovalent group and two substituents are bonded to each other.
바람직하게는, 상기 화학식 1로 표시되는 화합물은, 하기 화학식 1-1 내지 1-4 중 어느 하나로 표시되는 화합물이다.Preferably, the compound represented by the formula (1) is a compound represented by any one of the following formulas (1-1) to (1-4).
[화학식 1-1][Formula 1-1]
[화학식 1-2][Formula 1-2]
[화학식 1-3][Formula 1-3]
[화학식 1-4][Formula 1-4]
또한, 상기 화학식 1의 각 치환기의 결합위치에 따라, 상기 화학식 1로 표시되는 화합물은, 하기 화학식 2-1 내지 2-4 중 어느 하나로 표시되는 화합물일 수 있다:The compound represented by the
[화학식 2-1][Formula 2-1]
[화학식 2-2][Formula 2-2]
[화학식 2-3][Formula 2-3]
[화학식 2-4][Chemical Formula 2-4]
또한, L의 치환 위치는 아래의 1번, 2번, 3번, 또는 4번이며, 바람직하게는 3번 위치에 치환된다:Further, the substitution position of L is 1, 2, 3 or 4, preferably 3,
바람직하게는, X1는 N-(페닐), C(CH3)2, S, 또는 O이다. Preferably, X 1 is N- (phenyl), C (CH 3 ) 2 , S, or O.
바람직하게는, X2는 S, 또는 O이다. Preferably, X 2 is S, or O.
바람직하게는, Ar1은 페닐, 비페닐릴, 나프틸, 페난쓰레닐, 또는 트리페닐레닐이다. Preferably, Ar 1 is phenyl, biphenyl, naphthyl, phenanthrenyl, or triphenylenyl.
바람직하게는, L은 단일 결합이다. Preferably, L is a single bond.
바람직하게는, Ar2는 하기로 구성되는 군으로부터 선택되는 어느 하나이다:Preferably, Ar < 2 > is any one selected from the group consisting of:
상기에서, 바람직하게는 X3는 N-(페닐), N-(비페닐릴), N-(나프틸), N-(트리페닐레닐), N-(9,9-디메틸플루오레닐), N-(9-페닐-카바졸릴), C(CH3)2, C(페닐)2, S, 또는 O이다. 또한 바람직하게는, X4는 N-(페닐), C(CH3)2, S, 또는 O이다. 또한 바람직하게는, R6는 수소, 페닐, (3,5-디페닐)페닐, 디벤조[b,d]퓨라닐, 또는 디벤조[b,d]싸이오페닐이다. Preferably, X 3 is selected from the group consisting of N- (phenyl), N- (biphenylyl), N- (naphthyl), N- (triphenylenyl), N- (9,9-dimethylfluorenyl) , N- - a (9-phenyl-carbazolyl), C (CH 3) 2 , C ( phenyl) 2, S, or O. Also preferably, X 4 is N- (phenyl), C (CH 3 ) 2 , S, or O. Also preferably, R 6 is hydrogen, phenyl, (3,5-diphenyl) phenyl, dibenzo [b, d] furanyl, or dibenzo [b, d] thiophenyl.
상기 화학식 1로 표시되는 화합물은, 하기 화합물로 구성되는 군으로부터 선택될 수 있다. The compound represented by
상기 화학식 1로 표시되는 화합물은 일례로 하기 반응식 1과 같은 제조 방법으로 제조할 수 있다. The compound represented by the formula (1) can be prepared, for example, according to the following
[반응식 1][Reaction Scheme 1]
상기 반응은, 상기 화학식 1-a로 표시되는 화합물과 상기 화학식 1-b로 표시되는 화합물을 반응시켜 상기 화학식 1로 표시되는 화합물을 제조하는 단계이다. 상기 반응은 스즈키 커플링 반응으로서, 팔라듐 촉매와 염기 존재하에 수행하는 것이 바람직하며, 스즈키 커플링 반응을 위한 반응기는 당업계에 알려진 바에 따라 변경이 가능하다. 상기 제조 방법은 후술할 제조예에서 보다 구체화될 수 있다. The reaction is a step of reacting the compound represented by the formula (1-a) with the compound represented by the formula (1-b) to prepare the compound represented by the formula (1). The reaction is preferably carried out in the presence of a palladium catalyst and a base as a Suzuki coupling reaction, and the reactor for the Suzuki coupling reaction can be modified as known in the art. The above production method can be more specific in the production example to be described later.
또한, 본 발명은 상기 화학식 1로 표시되는 화합물을 포함하는 유기 발광 소자를 제공한다. 일례로, 본 발명은 제1 전극; 상기 제1 전극과 대향하여 구비된 제2 전극; 및 상기 제1 전극과 상기 제2 전극 사이에 구비된 1층 이상의 유기물 층을 포함하는 유기 발광 소자로서, 상기 유기물층 중 1층 이상은 상기 화학식 1로 표시되는 화합물을 포함하는, 유기 발광 소자를 제공한다. Also, the present invention provides an organic light emitting device including the compound represented by
본 발명의 유기 발광 소자의 유기물 층은 단층 구조로 이루어질 수도 있으나, 2층 이상의 유기물층이 적층된 다층 구조로 이루어질 수 있다. 예컨대, 본 발명의 유기 발광 소자는 유기물 층으로서 정공주입층, 정공수송층, 발광층, 전자수송층, 전자주입층 등을 포함하는 구조를 가질 수 있다. 그러나 유기 발광 소자의 구조는 이에 한정되지 않고 더 적은 수의 유기층을 포함할 수 있다.The organic material layer of the organic light emitting device of the present invention may have a single layer structure, but may have a multilayer structure in which two or more organic material layers are stacked. For example, the organic light emitting device of the present invention may have a structure including a hole injecting layer, a hole transporting layer, a light emitting layer, an electron transporting layer, and an electron injecting layer as organic layers. However, the structure of the organic light emitting device is not limited thereto and may include a smaller number of organic layers.
또한, 상기 유기물 층은 정공주입층, 정공수송층, 또는 정공 주입과 수송을 동시에 하는 층을 포함할 수 있고, 상기 정공주입층, 정공수송층, 또는 정공 주입과 수송을 동시에 하는 층은 상기 화학식 1로 표시되는 화합물을 포함한다. The organic material layer may include a hole injecting layer, a hole transporting layer, or a layer simultaneously injecting and transporting holes, and the hole injecting layer, the hole transporting layer, And a compound to be displayed.
또한, 상기 유기물 층은 발광층을 포함할 수 있고, 상기 발광층은 상기 화학식 1로 표시되는 화합물을 포함한다. In addition, the organic layer may include a light emitting layer, and the light emitting layer includes a compound represented by the general formula (1).
또한, 상기 유기물 층은 전자수송층, 또는 전자주입층을 포함할 수 있고, 상기 전자수송층, 또는 전자주입층은 상기 화학식 1로 표시되는 화합물을 포함한다. The organic material layer may include an electron transporting layer or an electron injecting layer, and the electron transporting layer or the electron injecting layer includes the compound represented by the above formula (1).
또한, 상기 전자수송층, 전자주입층, 또는 전자수송 및 전자주입을 동시에 하는 층은 상기 화학식 1로 표시되는 화합물을 포함한다. Further, the electron transporting layer, the electron injecting layer, or the layer which simultaneously transports electrons and injects electrons includes the compound represented by the above formula (1).
또한, 상기 유기물 층은 발광층 및 전자수송층을 포함하고, 상기 전자수송층은 상기 화학식 1로 표시되는 화합물을 포함할 수 있다. The organic material layer may include a light emitting layer and an electron transporting layer, and the electron transporting layer may include a compound represented by the general formula (1).
또한, 본 발명에 따른 유기 발광 소자는, 기판 상에 양극, 1층 이상의 유기물 층 및 음극이 순차적으로 적층된 구조(normal type)의 유기 발광 소자일 수 있다. 또한, 본 발명에 따른 유기 발광 소자는 기판 상에 음극, 1층 이상의 유기물 층 및 양극이 순차적으로 적층된 역방향 구조(inverted type)의 유기 발광 소자일 수 있다. 예컨대, 본 발명의 일실시예에 따른 유기 발광 소자의 구조는 도 1 및 2에 예시되어 있다.In addition, the organic light emitting device according to the present invention may be a normal type organic light emitting device in which an anode, one or more organic layers, and a cathode are sequentially stacked on a substrate. In addition, the organic light emitting device according to the present invention may be an inverted type organic light emitting device in which a cathode, at least one organic material layer, and an anode are sequentially stacked on a substrate. For example, the structure of an organic light emitting diode according to an embodiment of the present invention is illustrated in FIGS.
도 1은 기판(1), 양극(2), 발광층(3), 음극(4)으로 이루어진 유기 발광 소자의 예를 도시한 것이다. 이와 같은 구조에 있어서, 상기 화학식 1로 표시되는 화합물은 상기 발광층에 포함될 수 있다. Fig. 1 shows an example of an organic light-emitting device comprising a
도 2는 기판 (1), 양극(2), 정공주입층(5), 정공수송층(6), 발광층(7), 전자수송층(8) 및 음극(4)로 이루어진 유기 발광 소자의 예를 도시한 것이다. 이와 같은 구조에 있어서, 상기 화학식 1로 표시되는 화합물은 상기 정공주입층, 정공수송층, 발광층 및 전자수송층 중 1층 이상에 포함될 수 있다. 2 shows an example of an organic light emitting element comprising a
본 발명에 따른 유기 발광 소자는, 상기 유기물 층 중 1층 이상이 상기 화학식 1로 표시되는 화합물을 포함하는 것을 제외하고는 당 기술분야에 알려져 있는 재료와 방법으로 제조될 수 있다. 또한, 상기 유기 발광 소자가 복수개의 유기물층을 포함하는 경우, 상기 유기물층은 동일한 물질 또는 다른 물질로 형성될 수 있다. The organic light emitting device according to the present invention can be manufactured by materials and methods known in the art, except that at least one of the organic material layers includes the compound represented by the above formula (1). In addition, when the organic light emitting diode includes a plurality of organic layers, the organic layers may be formed of the same material or different materials.
예컨대, 본 발명에 따른 유기 발광 소자는 기판 상에 제1 전극, 유기물층 및 제2 전극을 순차적으로 적층시켜 제조할 수 있다. 이때, 스퍼터링법(sputtering)이나 전자빔 증발법(e-beam evaporation)과 같은 PVD(physical Vapor Deposition)방법을 이용하여, 기판 상에 금속 또는 전도성을 가지는 금속 산화물 또는 이들의 합금을 증착시켜 양극을 형성하고, 그 위에 정공 주입층, 정공 수송층, 발광층 및 전자 수송층을 포함하는 유기물 층을 형성한 후, 그 위에 음극으로 사용할 수 있는 물질을 증착시켜 제조할 수 있다. 이와 같은 방법 외에도, 기판 상에 음극 물질부터 유기물층, 양극 물질을 차례로 증착시켜 유기 발광 소자를 만들 수 있다. For example, the organic light emitting device according to the present invention can be manufactured by sequentially laminating a first electrode, an organic material layer, and a second electrode on a substrate. At this time, a metal or a metal oxide having conductivity or an alloy thereof is deposited on the substrate using a PVD (physical vapor deposition) method such as sputtering or e-beam evaporation to form an anode Forming an organic material layer including a hole injection layer, a hole transporting layer, a light emitting layer and an electron transporting layer thereon, and then depositing a material usable as a cathode on the organic material layer. In addition to such a method, an organic light emitting device can be formed by sequentially depositing a cathode material, an organic material layer, and a cathode material on a substrate.
또한, 상기 화학식 1로 표시되는 화합물은 유기 발광 소자의 제조시 진공 증착법 뿐만 아니라 용액 도포법에 의하여 유기물 층으로 형성될 수 있다. 여기서, 용액 도포법이라 함은 스핀 코팅, 딥코팅, 닥터 블레이딩, 잉크젯 프린팅, 스크린 프린팅, 스프레이법, 롤 코팅 등을 의미하지만, 이들만으로 한정되는 것은 아니다.In addition, the compound represented by
이와 같은 방법 외에도, 기판 상에 음극 물질로부터 유기물층, 양극 물질을 차례로 증착시켜 유기 발광 소자를 제조할 수 있다(WO 2003/012890). 다만, 제조 방법이 이에 한정되는 것은 아니다. In addition to such a method, an organic light emitting device can be manufactured by sequentially depositing an organic material layer and a cathode material from a cathode material on a substrate (WO 2003/012890). However, the manufacturing method is not limited thereto.
일례로, 상기 제1 전극은 양극이고, 상기 제2 전극은 음극이거나, 또는 상기 제1 전극은 음극이고, 상기 제2 전극은 양극이다.In one example, the first electrode is an anode, the second electrode is a cathode, or the first electrode is a cathode and the second electrode is a cathode.
상기 양극 물질로는 통상 유기물 층으로 정공 주입이 원활할 수 있도록 일함수가 큰 물질이 바람직하다. 상기 양극 물질의 구체적인 예로는 바나듐, 크롬, 구리, 아연, 금과 같은 금속 또는 이들의 합금; 아연 산화물, 인듐 산화물, 인듐주석 산화물(ITO), 인듐아연 산화물(IZO)과 같은 금속 산화물; ZnO:Al 또는 SNO2:Sb와 같은 금속과 산화물의 조합; 폴리(3-메틸티오펜), 폴리[3,4-(에틸렌-1,2-디옥시)티오펜](PEDOT), 폴리피롤 및 폴리아닐린과 같은 전도성 고분자 등이 있으나, 이들에만 한정되는 것은 아니다. As the anode material, a material having a large work function is preferably used so that hole injection can be smoothly conducted to the organic material layer. Specific examples of the positive electrode material include metals such as vanadium, chromium, copper, zinc, and gold, or alloys thereof; Metal oxides such as zinc oxide, indium oxide, indium tin oxide (ITO), and indium zinc oxide (IZO); ZnO: Al or SNO 2: a combination of a metal and an oxide such as Sb; Conductive polymers such as poly (3-methylthiophene), poly [3,4- (ethylene-1,2-dioxy) thiophene] (PEDOT), polypyrrole and polyaniline.
상기 음극 물질로는 통상 유기물층으로 전자 주입이 용이하도록 일함수가 작은 물질인 것이 바람직하다. 상기 음극 물질의 구체적인 예로는 마그네슘, 칼슘, 나트륨, 칼륨, 티타늄, 인듐, 이트륨, 리튬, 가돌리늄, 알루미늄, 은, 주석 및 납과 같은 금속 또는 이들의 합금; LiF/Al 또는 LiO2/Al과 같은 다층 구조 물질 등이 있으나, 이들에만 한정되는 것은 아니다. The negative electrode material is preferably a material having a small work function to facilitate electron injection into the organic material layer. Specific examples of the negative electrode material include metals such as magnesium, calcium, sodium, potassium, titanium, indium, yttrium, lithium, gadolinium, aluminum, silver, tin and lead or alloys thereof; Layer structure materials such as LiF / Al or LiO 2 / Al, but are not limited thereto.
상기 정공 주입 물질로는 전극으로부터 정공을 주입하는 층으로, 정공 주입 물질로는 정공을 수송하는 능력을 가져 양극에서의 정공 주입효과, 발광층 또는 발광재료에 대하여 우수한 정공 주입 효과를 갖고, 발광층에서 생성된 여기자의 전자주입층 또는 전자주입재료에의 이동을 방지하며, 또한, 박막 형성 능력이 우수한 화합물이 바람직하다. 정공 주입 물질의 HOMO(highest occupied molecular orbital)가 양극 물질의 일함수와 주변 유기물 층의 HOMO 사이인 것이 바람직하다. 정공 주입 물질의 구체적인 예로는 금속 포피린(porphyrin), 올리고티오펜, 아릴아민 계열의 유기물, 헥사니트릴헥사아자트리페닐렌 계열의 유기물, 퀴나크리돈(quinacridone)계열의 유기물, 페릴렌(perylene) 계열의 유기물, 안트라퀴논 및 폴리아닐린과 폴리티오펜 계열의 전도성 고분자 등이 있으나, 이들에만 한정 되는 것은 아니다. The hole injecting material is a layer for injecting holes from the electrode. The hole injecting material has a hole injecting effect, a hole injecting effect in the anode, and an excellent hole injecting effect in the light emitting layer or the light emitting material. A compound which prevents the exciton from migrating to the electron injection layer or the electron injection material and is also excellent in the thin film forming ability is preferable. It is preferred that the highest occupied molecular orbital (HOMO) of the hole injecting material be between the work function of the anode material and the HOMO of the surrounding organic layer. Specific examples of the hole injecting material include metal porphyrin, oligothiophene, arylamine-based organic materials, hexanitrile hexaazatriphenylene-based organic materials, quinacridone-based organic materials, and perylene- , Anthraquinone, polyaniline and polythiophene-based conductive polymers, but the present invention is not limited thereto.
상기 정공수송층은 정공주입층으로부터 정공을 수취하여 발광층까지 정공을 수송하는 층으로, 정공 수송 물질로 양극이나 정공 주입층으로부터 정공을 수송받아 발광층으로 옮겨줄 수 있는 물질로 정공에 대한 이동성이 큰 물질이 적합하다. 구체적인 예로는 아릴아민 계열의 유기물, 전도성 고분자, 및 공액 부분과 비공액 부분이 함께 있는 블록 공중합체 등이 있으나, 이들에만 한정되는 것은 아니다. The hole transport layer is a layer that transports holes from the hole injection layer to the light emitting layer and transports holes from the anode or the hole injection layer to the light emitting layer by using a hole transport material. Is suitable. Specific examples include arylamine-based organic materials, conductive polymers, and block copolymers having a conjugated portion and a non-conjugated portion together, but are not limited thereto.
상기 발광 물질로는 정공 수송층과 전자 수송층으로부터 정공과 전자를 각각 수송받아 결합시킴으로써 가시광선 영역의 빛을 낼 수 있는 물질로서, 형광이나 인광에 대한 양자 효율이 좋은 물질이 바람직하다. 구체적인 예로 8-히드록시-퀴놀린 알루미늄 착물(Alq3); 카르바졸 계열 화합물; 이량체화 스티릴(dimerized styryl) 화합물; BAlq; 10-히드록시벤조 퀴놀린-금속 화합물; 벤족사졸, 벤즈티아졸 및 벤즈이미다졸 계열의 화합물; 폴리(p-페닐렌비닐렌)(PPV) 계열의 고분자; 스피로(spiro) 화합물; 폴리플루오렌, 루브렌 등이 있으나, 이들에만 한정되는 것은 아니다. The light emitting material is preferably a material capable of emitting light in the visible light region by transporting and receiving holes and electrons from the hole transporting layer and the electron transporting layer, respectively, and having good quantum efficiency for fluorescence or phosphorescence. Specific examples include 8-hydroxy-quinoline aluminum complex (Alq 3 ); Carbazole-based compounds; Dimerized styryl compounds; BAlq; 10-hydroxybenzoquinoline-metal compounds; Compounds of the benzoxazole, benzothiazole and benzimidazole series; Polymers of poly (p-phenylenevinylene) (PPV) series; Spiro compounds; Polyfluorene, rubrene, and the like, but are not limited thereto.
상기 발광층은 호스트 재료 및 도펀트 재료를 포함할 수 있다. 호스트 재료는 축합 방향족환 유도체 또는 헤테로환 함유 화합물 등이 있다. 구체적으로 축합 방향족환 유도체로는 안트라센 유도체, 피렌 유도체, 나프탈렌 유도체, 펜타센 유도체, 페난트렌 화합물, 플루오란텐 화합물 등이 있고, 헤테로환 함유 화합물로는 카바졸 유도체, 디벤조퓨란 유도체, 래더형 퓨란 화합물, 피리미딘 유도체 등이 있으나, 이에 한정되지 않는다. The light emitting layer may include a host material and a dopant material. The host material is a condensed aromatic ring derivative or a heterocyclic compound. Specific examples of the condensed aromatic ring derivatives include anthracene derivatives, pyrene derivatives, naphthalene derivatives, pentacene derivatives, phenanthrene compounds, and fluoranthene compounds. Examples of the heterocycle-containing compounds include carbazole derivatives, dibenzofuran derivatives, Furan compounds, pyrimidine derivatives, and the like, but are not limited thereto.
도펀트 재료로는 방향족 아민 유도체, 스트릴아민 화합물, 붕소 착체, 플루오란텐 화합물, 금속 착체 등이 있다. 구체적으로 방향족 아민 유도체로는 치환 또는 비치환된 아릴아미노기를 갖는 축합 방향족환 유도체로서, 아릴아미노기를 갖는 피렌, 안트라센, 크리센, 페리플란텐 등이 있으며, 스티릴아민 화합물로는 치환 또는 비치환된 아릴아민에 적어도 1개의 아릴비닐기가 치환되어 있는 화합물로, 아릴기, 실릴기, 알킬기, 사이클로알킬기 및 아릴아미노기로 이루어진 군에서 1 또는 2 이상 선택되는 치환기가 치환 또는 비치환된다. 구체적으로 스티릴아민, 스티릴디아민, 스티릴트리아민, 스티릴테트라아민 등이 있으나, 이에 한정되지 않는다. 또한, 금속 착체로는 이리듐 착체, 백금 착체 등이 있으나, 이에 한정되지 않는다.Examples of the dopant material include aromatic amine derivatives, styrylamine compounds, boron complexes, fluoranthene compounds, and metal complexes. Specific examples of the aromatic amine derivatives include condensed aromatic ring derivatives having substituted or unsubstituted arylamino groups, and examples thereof include pyrene, anthracene, chrysene, and peripherrhene having an arylamino group. Examples of the styrylamine compound include substituted or unsubstituted Wherein at least one aryl vinyl group is substituted with at least one aryl vinyl group, and at least one substituent selected from the group consisting of an aryl group, a silyl group, an alkyl group, a cycloalkyl group and an arylamino group is substituted or unsubstituted. Specific examples thereof include, but are not limited to, styrylamine, styryldiamine, styryltriamine, styryltetraamine, and the like. Examples of the metal complex include iridium complex, platinum complex, and the like, but are not limited thereto.
상기 전자 수송 물질로는 전자주입층으로부터 전자를 수취하여 발광층까지 전자를 수송하는 층으로 전자 수송 물질로는 음극으로부터 전자를 잘 주입 받아 발광층으로 옮겨줄 수 있는 물질로서, 전자에 대한 이동성이 큰 물질이 적합하다. 구체적인 예로는 8-히드록시퀴놀린의 Al 착물; Alq3를 포함한 착물; 유기 라디칼 화합물; 히드록시플라본-금속 착물 등이 있으나, 이들에만 한정되는 것은 아니다. 전자 수송층은 종래기술에 따라 사용된 바와 같이 임의의 원하는 캐소드 물질과 함께 사용할 수 있다. 특히, 적절한 캐소드 물질의 예는 낮은 일함수를 가지고 알루미늄층 또는 실버층이 뒤따르는 통상적인 물질이다. 구체적으로 세슘, 바륨, 칼슘, 이테르븀 및 사마륨이고, 각 경우 알루미늄 층 또는 실버층이 뒤따른다.The electron transporting material is a layer that receives electrons from the electron injecting layer and transports electrons to the light emitting layer. The electron transporting material is a material capable of transferring electrons from the cathode well to the light emitting layer. Is suitable. Specific examples include an Al complex of 8-hydroxyquinoline; Complexes containing Alq 3 ; Organic radical compounds; Hydroxyflavone-metal complexes, and the like, but are not limited thereto. The electron transporting layer can be used with any desired cathode material as used according to the prior art. In particular, an example of a suitable cathode material is a conventional material having a low work function followed by an aluminum layer or a silver layer. Specifically cesium, barium, calcium, ytterbium and samarium, in each case followed by an aluminum layer or a silver layer.
상기 전자주입층은 전극으로부터 전자를 주입하는 층으로, 전자를 수송하는 능력을 갖고, 음극으로부터의 전자 주입 효과, 발광층 또는 발광 재료에 대하여 우수한 전자주입 효과를 가지며, 발광층에서 생성된 여기자의 정공주입층에의 이동을 방지하고, 또한, 박막형성능력이 우수한 화합물이 바람직하다. 구체적으로는 플루오레논, 안트라퀴노다이메탄, 다이페노퀴논, 티오피란 다이옥사이드, 옥사졸, 옥사다이아졸, 트리아졸, 이미다졸, 페릴렌테트라카복실산, 프레오레닐리덴 메탄, 안트론 등과 그들의 유도체, 금속 착체 화합물 및 질소 함유 5원환 유도체 등이 있으나, 이에 한정되지 않는다. The electron injection layer is a layer for injecting electrons from the electrode. The electron injection layer has an ability to transport electrons, has an electron injection effect from the cathode, and has an excellent electron injection effect with respect to the light emitting layer or the light emitting material. A compound which prevents migration to a layer and is excellent in a thin film forming ability is preferable. Specific examples thereof include fluorenone, anthraquinodimethane, diphenoquinone, thiopyran dioxide, oxazole, oxadiazole, triazole, imidazole, perylenetetracarboxylic acid, preorenylidene methane, A nitrogen-containing 5-membered ring derivative, and the like, but are not limited thereto.
상기 금속 착체 화합물로서는 8-하이드록시퀴놀리나토 리튬, 비스(8-하이드록시퀴놀리나토)아연, 비스(8-하이드록시퀴놀리나토)구리, 비스(8-하이드록시퀴놀리나토)망간, 트리스(8-하이드록시퀴놀리나토)알루미늄, 트리스(2-메틸-8-하이드록시퀴놀리나토)알루미늄, 트리스(8-하이드록시퀴놀리나토)갈륨, 비스(10-하이드록시벤조[h]퀴놀리나토)베릴륨, 비스(10-하이드록시벤조[h]퀴놀리나토)아연, 비스(2-메틸-8-퀴놀리나토)클로로갈륨, 비스(2-메틸-8-퀴놀리나토)(o-크레졸라토)갈륨, 비스(2-메틸-8-퀴놀리나토)(1-나프톨라토)알루미늄, 비스(2-메틸-8-퀴놀리나토)(2-나프톨라토)갈륨 등이 있으나, 이에 한정되지 않는다.Examples of the metal complex compound include 8-hydroxyquinolinato lithium, bis (8-hydroxyquinolinato) zinc, bis (8-hydroxyquinolinato) copper, bis (8- Tris (8-hydroxyquinolinato) aluminum, tris (2-methyl-8-hydroxyquinolinato) aluminum, tris (8- hydroxyquinolinato) gallium, bis (10- Quinolinato) beryllium, bis (10-hydroxybenzo [h] quinolinato) zinc, bis (2-methyl-8- quinolinato) chlorogallium, bis (2-methyl-8-quinolinato) (2-naphtholato) gallium, and the like, But is not limited thereto.
본 발명에 따른 유기 발광 소자는 사용되는 재료에 따라 전면 발광형, 후면 발광형 또는 양면 발광형일 수 있다.The organic light emitting device according to the present invention may be a front emission type, a back emission type, or a both-sided emission type, depending on the material used.
또한, 상기 화학식 1로 표시되는 화합물은 유기 발광 소자 외에도 유기 태양 전지 또는 유기 트랜지스터에 포함될 수 있다.In addition, the compound represented by
상기 화학식 1로 표시되는 화합물 및 이를 포함하는 유기 발광 소자의 제조는 이하 실시예에서 구체적으로 설명한다. 그러나 하기 실시예는 본 발명을 예시하기 위한 것이며, 본 발명의 범위가 이들에 의하여 한정되는 것은 아니다.The preparation of the compound represented by
제조예Manufacturing example
제조예Manufacturing example
1: 화합물 sub 1의 제조 1: Preparation of
1) 화합물 A1의 제조1) Preparation of Compound A1
2000 mL 둥근 플라스크에 메틸 3-아미노벤조-티오펜-2-카르복실레이트(47.5 g, 0.23 mol) 및 우레아(79.4 g, 1.15 mol)의 혼합물을 200℃에서 2시간 동안 교반하였다. 고온의 반응 혼합물을 상온으로 냉각한 후, 수산화나트륨 용액에 붓고, 불순물을 여과하여 제거한 다음, 반응물을 산성화하여(HCl, 2N), 수득한 침전물을 건조시켜 화합물 A1을 수득하였다(35 g, 수율 75%).A mixture of methyl 3-aminobenzo-thiophene-2-carboxylate (47.5 g, 0.23 mol) and urea (79.4 g, 1.15 mol) was stirred in a 2000 mL round-bottomed flask at 200 ° C for 2 hours. The reaction mixture was cooled to room temperature, poured into sodium hydroxide solution, the impurities were removed by filtration, the reaction product was acidified (HCl, 2N) and the resulting precipitate was dried to obtain Compound A1 (35 g, yield 75%).
(2) 화합물 sub 1의 제조(2) Preparation of
1000 mL 둥근 플라스크에 화합물 A1(35 g, 0.16 mol) 및 옥시염화인(600 mL)의 혼합물을 환류 하에 6시간 동안 교반하였다. 반응 혼합물을 상온으로 냉각시키고, 강하게 교반하면서 얼음/물에 부어, 침전물을 생성하였다. 이로부터 수득한 반응물을 여과하여, 화합물 sub 1(35 g, 수율 85%, 백색 고체)을 수득하였다.A 1000 mL round flask was charged with a mixture of compound A1 (35 g, 0.16 mol) and phosphorus oxychloride (600 mL) under reflux for 6 hours. The reaction mixture was cooled to room temperature and poured into ice / water with vigorous stirring to produce a precipitate. The resulting reaction product was filtered to obtain compound sub 1 (35 g, yield 85%, white solid).
제조예Manufacturing example
2: 화합물 sub 2의 제조 2: Preparation of
1) 화합물 B1의 제조1) Preparation of compound B1
1-브로모-3-플루오로-2-아이오도벤젠(100 g, 333.5 mmol), (5-클로로-2-메톡시페닐)보론산(62.2 g, 333.5 mmol)을 테트라하이드로퓨란 800 mL에 녹였다. 여기에 탄산나트륨(Na2CO3) 2 M 용액(500 mL), 테트라키스(트리페닐포스핀)팔라듐(0)(7.7 g, 6.7 mmol)을 넣고 12시간 환류시켰다. 반응이 끝난 후 상온으로 냉각시키고, 생성된 혼합물을 물과 톨루엔으로 3회 추출하였다. 톨루엔 층을 분리한 후, 황산 마그네슘으로 건조하여 여과한 여액을 감압 증류하여 얻은 혼합물을 클로로포름 및 에탄올을 이용하여 3회 재결정하여 화합물 B1(53.7 g, 수율 51%; MS:[M+H]+=314)을 얻었다.(100 g, 333.5 mmol) and (5-chloro-2-methoxyphenyl) boronic acid (62.2 g, 333.5 mmol) were dissolved in 800 mL of tetrahydrofuran, to which was added 1-bromo-3- Melted. To this was added a 2 M solution of sodium carbonate (Na 2 CO 3 ) 2 (500 mL) and tetrakis (triphenylphosphine) palladium (0) (7.7 g, 6.7 mmol) and refluxed for 12 hours. After the reaction was completed, the reaction mixture was cooled to room temperature, and the resulting mixture was extracted three times with water and toluene. The toluene layer was separated and dried with magnesium sulfate. The filtrate was distilled under reduced pressure, and the resulting mixture was recrystallized three times using chloroform and ethanol to obtain Compound B1 (53.7 g, yield 51%; MS: [M + H] = 314).
2) 화합물 B2의 제조2) Preparation of compound B2
화합물 B1(50.0 g, 158.5 mmol)을 디클로로메탄 600 mL에 녹인 뒤 0℃로 냉각시켰다. 보론 트리브로마이드(15.8 mL, 166.4 mmol)를 천천히 적가한 뒤 12시간 동안 교반하였다. 반응이 종료된 후 물로 3회 세척하고, 황산 마그네슘으로 건조하여 여과한 여액을 감압 증류하고 컬럼크로마토크래피로 정제하여 화합물 B2(47.4 g, 수율 99%; MS:[M+H]+=300)을 얻었다.Compound B1 (50.0 g, 158.5 mmol) was dissolved in 600 mL of dichloromethane and then cooled to 0 占 폚. Boron tribromide (15.8 mL, 166.4 mmol) was slowly added dropwise and stirred for 12 hours. It washed 3 times with water after the reaction was completed, and was evaporated under reduced pressure the filtrate was filtered and dried over magnesium sulfate and purified by column chromatography to compound B2 (47.4 g, yield: 99%; MS: [M + H] + = 300 ).
3) 화합물 B3의 제조3) Preparation of compound B3
화합물 B2(40.0 g, 132.7 mmol)을 증류된 다이메틸포름아마이드(400 mL)에 녹였다. 이를 0℃로 냉각시키고, 여기에 나트륨 하이드리드(3.5 g, 145.9 mmol)를 천천히 적가하였다. 20분 동안 교반한 뒤 100℃에서 1시간 동안 교반하였다. 반응이 종료된 후 상온으로 냉각하고, 에탄올 100 mL을 천천히 넣었다. 상기 혼합물을 감압 증류하여 얻은 혼합물을 클로로포름 및 에틸아세테이트로 재결정하여 화합물 B3(30.3 g, 수율 81%; MS:[M+H]+=280)을 얻었다.Compound B2 (40.0 g, 132.7 mmol) was dissolved in distilled dimethylformamide (400 mL). This was cooled to 0 < 0 > C and sodium hydride (3.5 g, 145.9 mmol) was slowly added dropwise thereto. The mixture was stirred for 20 minutes and then at 100 ° C for 1 hour. After completion of the reaction, the reaction mixture was cooled to room temperature, and 100 mL of ethanol was slowly added thereto. The mixture was distilled under reduced pressure, and the resulting mixture was recrystallized from chloroform and ethyl acetate to obtain Compound B3 (30.3 g, yield 81%; MS: [M + H] + = 280).
4) 화합물 sub 2의 제조4) Preparation of
화합물 B3(30.0 g, 106.6 mmol)을 테트라하이드로퓨란(300 mL)에 녹인 후, -78℃로 온도를 낮추고 1.7 M 터셔리-부틸리튬(t-BuLi)(62.7 mL, 106.6 mmol)을 천천히 가하였다. 동일 온도에서 1시간 동안 교반한 후 트리아이소프로필보레이트(28.3 mL, 213.1 mmol)을 가하고, 상온으로 온도를 서서히 올리면서 3시간동안 교반하였다. 반응 혼합물에 2 N 염산수용액(200 mL)을 가하고 1.5시간 동안 상온에서 교반하였다. 생성된 침전물을 거르고 물과 에틸에테르(ethyl ether)로 차례로 씻은 후 진공 건조하였다. 건조 후 에틸에테르에 분산시켜 2시간 동안 교반한 후 여과하고 건조하여 화합물 sub 2(24.4 g, 수율 93%; MS:[M+H]+=247)을 제조하였다.Compound B3 (30.0 g, 106.6 mmol) was dissolved in tetrahydrofuran (300 mL), the temperature was lowered to -78 ° C and 1.7 M tert-butyllithium (t-BuLi) (62.7 mL, 106.6 mmol) Respectively. After stirring at the same temperature for 1 hour, triisopropyl borate (28.3 mL, 213.1 mmol) was added, and the mixture was stirred for 3 hours while gradually warming to room temperature. To the reaction mixture was added a 2 N aqueous hydrochloric acid solution (200 mL) and the mixture was stirred at room temperature for 1.5 hours. The resulting precipitate was filtered, washed with water and ethyl ether, and vacuum dried. After drying, the mixture was dispersed in ethyl ether and stirred for 2 hours, followed by filtration and drying to obtain compound sub 2 (24.4 g, yield 93%; MS: [M + H] + = 247).
제조예Manufacturing example
3: 화합물 sub 3의 제조 3: Preparation of
1) 화합물 C1의 제조1) Preparation of Compound C1
(5-클로로-2-메톡시페닐)보론산 대신 (4-클로로-2-메톡시페닐)보론산 (62.2 g, 333.5 mmol)을 사용한 것을 제죄하고는, 제조예 2의 화합물 B1의 제조와 동일한 방법으로 화합물 C1(65.3 g, 수율 62%; MS:[M+H]+=314)을 제조하였다.(62.2 g, 333.5 mmol) was used instead of (4-chloro-2-methoxyphenyl) boronic acid in place of (5-chloro-2- In the same manner, Compound C1 (65.3 g, yield 62%; MS: [M + H] + = 314) was prepared.
2) 화합물 C2의 제조2) Preparation of Compound C2
화합물 B1 대신 화합물 C1(50.0 g, 158.5 mmol)을 사용한 것을 제외하고는, 제조예 2의 화합물 B2의 제조와 동일한 방법으로 화합물 C2(43.0 g, 수율 90%; MS:[M+H]+=300)을 제조하였다.Compound C 2 (43.0 g, yield 90%; MS: [M + H] < + >) was obtained in the same manner as in the preparation of Compound B2 of Production Example 2, except that Compound C1 (50.0 g, 158.5 mmol) 300).
3) 화합물 C3의 제조3) Preparation of Compound C3
화합물 B2 대신 화합물 C2(40.0 g, 132.7 mmol)을 사용한 것을 제외하고는, 제조예 2의 화합물 B3의 제조와 동일한 방법으로 화합물 C3(30.6 g, 수율 82%; MS:[M+H]+=280)을 제조하였다.(30.6 g, yield 82%; MS: [M + H] < + >) was obtained in the same manner as in the preparation of the compound B3 in Production Example 2, except that Compound C2 (40.0 g, 132.7 mmol) 280).
4) 화합물 sub 3의 제조4) Preparation of
화합물 B3 대신 화합물 C3(30.0 g, 106.6 mmol)을 사용한 것을 제외하고는, 제조예 2의 화합물 sub 2의 제조와 동일한 방법으로 화합물 sub 3(25.0 g, 수율 95%; MS:[M+H]+=247)을 제조하였다.(25.0 g, yield 95%; MS: [M + H] < + >) was obtained in the same manner as in the preparation of
제조예Manufacturing example
4: 화합물 sub 4의 제조 4: Preparation of
1) 화합물 D1의 제조1) Preparation of compound D1
1-브로모-3-클로로-2-메톡시벤젠(113.2 g, 426.4 mmol)을 테트라하이드로퓨란(1000 mL)에 녹인 후, -78℃로 온도를 낮추고 1.7 M 터셔리-부틸리튬(t-BuLi)(251.7 mL, 426.4 mmol)을 천천히 가하였다. 동일 온도에서 1시간 동안 교반한 후 트리아이소프로필보레이트(B(OiPr)3)(113.2 mL, 852.4 mmol)을 가하고, 상온으로 온도를 서서히 올리면서 3시간 동안 교반하였다. 반응 혼합물에 2 N 염산 수용액(800 mL)을 가하고 1.5시간 동안 상온에서 교반하였다. 생성된 침전물을 거르고 물과 에틸에테르(ethyl ether)로 차례로 씻은 후 진공 건조하였다. 건조 후 클로로포름과 에틸아세테이트로 재결정하고 건조하여 (3-클로로-2-메톡시페닐)보론산(89.6 g, 수율 91%; MS:[M+H]+=230)을 제조하였다.After dissolving 1-bromo-3-chloro-2-methoxybenzene (113.2 g, 426.4 mmol) in tetrahydrofuran (1000 mL), the temperature was lowered to -78 ° C, 1.7M tert- BuLi) (251.7 mL, 426.4 mmol) was added slowly. After stirring at the same temperature for 1 hour, triisopropylborate (B (OiPr) 3 ) (113.2 mL, 852.4 mmol) was added and stirred for 3 hours while gradually warming to room temperature. To the reaction mixture was added a 2 N aqueous hydrochloric acid solution (800 mL) and the mixture was stirred at room temperature for 1.5 hours. The resulting precipitate was filtered, washed with water and ethyl ether, and vacuum dried. After drying, the product was recrystallized from chloroform and ethyl acetate and dried to obtain (3-chloro-2-methoxyphenyl) boronic acid (89.6 g, yield 91%; MS: [M + H] + = 230).
이어, (5-클로로-2-메톡시페닐)보론산 대신 (3-클로로-2-메톡시페닐)보론산(77.0 g, 333.5 mmol)을 사용한 것을 제외하고는, 제조예 2의 화합물 B1의 제조와 동일한 방법으로 화합물 D1(55.8 g, 수율 53%; MS:[M+H]+=314)을 제조하였다.Subsequently, to a solution of the compound B1 of Preparation Example 2 (3-chloro-2-methoxyphenyl) boronic acid (77.0 g, 333.5 mmol) (55.8 g, yield 53%; MS: [M + H] < + > = 314) was prepared in the same manner as the preparation of compound D1.
2) 화합물 D2의 제조2) Preparation of compound D2
화합물 B1 대신 화합물 D1(50.0 g, 158.5 mmol)을 사용한 것을 제외하고는, 제조예 2의 화합물 B2의 제조와 동일한 방법으로 화합물 D2(39.7 g, 수율 83%; MS:[M+H]+=300)을 제조하였다.(39.7 g, yield 83%; MS: [M + H] < + >) was obtained in the same manner as in the preparation of Compound B2 of Preparation Example 2, except that Compound D1 (50.0 g, 158.5 mmol) 300).
3) 화합물 D3의 제조3) Preparation of compound D3
화합물 B2 대신 화합물 D2(40.0 g, 132.7 mmol)을 사용한 것을 제외하고는, 제조예 2의 화합물 B3의 제조와 동일한 방법으로 화합물 D3(31.4 g, 수율 84%; MS:[M+H]+=280)을 제조하였다.Compound D3 (31.4 g, yield 84%; MS: [M + H] < + >) was obtained in the same manner as in the preparation of compound B3 in Production Example 2, except that Compound D2 (40.0 g, 132.7 mmol) 280).
4) 화합물 sub 4의 제조4) Preparation of
화합물 B3 대신 화합물 D3(30.0 g, 106.6 mmol)을 사용한 것을 제외하고는, 제조예 2의 화합물 sub 2의 제조와 동일한 방법으로 화합물 sub 4(25.5 g, 수율 97%; MS:[M+H]+=247)을 제조하였다.(25.5 g, yield 97%; MS: [M + H]) was obtained in the same manner as in the preparation of
제조예Manufacturing example
5: 화합물 sub 5의 제조 5: Preparation of
1) 화합물 E1의 제조1) Preparation of compound E1
화합물 sub 1(30 g, 118 mmol)과 페닐보로닉에시드(16 g, 129 mmol)을 테트라하이드로퓨란(300 mL)에 분산시킨 후, 2M 탄산칼륨수용액(aq. K2CO3)(176 mL, 352 mmol)을 첨가하고 테트라키스트리페닐포스피노팔라듐[Pd(PPh3)4](4 g, 1 mol%)을 넣은 후 12시간 동안 교반 환류하였다. 상온으로 온도를 낮추고 생성된 고체를 여과하였다. 여과된 고체를 테트라하이드로퓨란과 에틸아세테이트로 재결정하고 여과한 뒤, 건조하여 화합물 E1(28 g, 수율 81%; MS:[M+H]+=297)를 제조하였다.Compound 2 (30 g, 118 mmol) and phenylboronic acid (16 g, 129 mmol) were dispersed in tetrahydrofuran (300 mL), and a 2M aqueous potassium carbonate solution (aq. K 2 CO 3 ) It was added to mL, 352 mmol) and placed tetrakis triphenyl phosphino palladium [Pd (PPh 3) 4] (4 g, 1 mol%) was refluxed with stirring for 12 hours. The temperature was lowered to room temperature and the resulting solid was filtered. The filtered solid was recrystallized from tetrahydrofuran and ethyl acetate, filtered and then dried to give Compound E1 (28 g, yield 81%; MS: [M + H] + = 297).
2) 화합물 sub 5의 제조2) Preparation of
화합물 E1(20 g, 70 mmol)과 화합물 sub 2(19 g, 77 mmol)을 테트라하이드로퓨란(300 mL)에 분산시킨 후, 2M 탄산칼륨수용액(aq. K2CO3)(105 mL, 210 mmol)을 첨가하고 테트라키스트리페닐포스피노팔라듐[Pd(PPh3)4](2 g, 1 mol%)을 넣은 후 12시간 동안 교반 환류하였다. 상온으로 온도를 낮추고 생성된 고체를 여과하였다. 여과된 고체를 테트라하이드로퓨란과 에틸아세테이트로 재결정하고 여과한 뒤, 건조하여 화합물 sub 5(29 g, 수율 91%; MS:[M+H]+=463)를 제조하였다.A solution of 2M potassium carbonate aqueous solution (aq. K 2 CO 3 ) (105 mL, 210 mmol) was added to a solution of compound E1 (20 g, 70 mmol) and compound sub 2 (19 g, 77 mmol) in tetrahydrofuran was added to the mmol), insert tetrakis triphenyl phosphino palladium [Pd (PPh 3) 4] (2 g, 1 mol%) was refluxed with stirring for 12 hours. The temperature was lowered to room temperature and the resulting solid was filtered. The filtrated solid was recrystallized from tetrahydrofuran and ethyl acetate, filtered and dried to give compound sub 5 (29 g, yield 91%; MS: [M + H] + = 463).
제조예Manufacturing example
6: 화합물 sub 6의 제조 6: Preparation of
화합물 sub 2 대신 화합물 sub 3(19 g, 77 mmol)을 사용한 것을 제외하고는, 제조예 5의 화합물 sub 5의 제조와 동일한 방법으로 화합물 sub 6(28 g, 수율 88%; MS:[M+H]+=463)을 제조하였다.The compound sub 6 (28 g, yield 88%; MS: [M + H] +) was prepared in the same manner as in the preparation of
제조예Manufacturing example 7: 화합물 sub 7의 제조 7: Preparation of compound sub7
화합물 sub 2 대신 화합물 sub 4(19 g, 77 mmol)을 사용한 것을 제외하고는, 제조예 5의 화합물 sub 5의 제조와 동일한 방법으로 화합물 sub 7(27 g, 수율 84%; MS:[M+H]+=463)을 제조하였다.Compound 27 (27 g, yield 84%; MS: [M + H] +) was prepared in the same manner as in the preparation of
제조예Manufacturing example
8: 화합물 sub 8의 제조 8: Preparation of
화합물 sub 5(20 g, 41 mmol), 비스(피나콜라토)디보론(12 g, 45 mmol), 포타슘 아세테이트(12 g, 123 mmol), 디벤질리덴아세톤팔라듐(1 g, 1.2 mmol)과 트리시클로헥실포스핀(1 g, 2.5 mmol)을 테트라하이드로퓨란(300 mL)에 넣고 12시간 동안 환류시켰다. 반응이 종료된 후 상온으로 냉각한 후, 감압 증류하여 용매를 제거하였다. 이것을 클로로포름에 녹이고 물로 3회 씻어낸 뒤 유기층을 분리하여 황산 마그네슘으로 건조하였다. 이를 감압 증류하여 화합물 sub 8(23 g, 수율 85%; MS:[M+H]+=556)을 제조하였다.The compound 5 (20 g, 41 mmol), bis (pinacolato) diboron (12 g, 45 mmol), potassium acetate (12 g, 123 mmol), dibenzylidene acetone palladium Tricyclohexylphosphine (1 g, 2.5 mmol) was added to tetrahydrofuran (300 mL) and refluxed for 12 hours. After completion of the reaction, the reaction mixture was cooled to room temperature and distilled under reduced pressure to remove the solvent. This was dissolved in chloroform and washed three times with water. The organic layer was separated and dried over magnesium sulfate. The compound sub 8 (23 g, yield 85%; MS: [M + H] + = 556) was prepared by distillation under reduced pressure.
제조예Manufacturing example 9: 화합물 sub 9의 제조 9: Preparation of compound sub 9
화합물 sub 5 대신 화합물 sub 6(19 g, 77 mmol)을 사용한 것을 제외하고는, 제조예 8의 화합물 sub 8의 제조와 동일한 방법으로 화합물 sub 9(23 g, 수율 89%; MS:[M+H]+=555)을 제조하였다.(23 g, yield 89%; MS: [M + H] < + >) was prepared in the same manner as in the preparation of
제조예Manufacturing example 10: 화합물 sub 10의 제조 10: Preparation of compound sub 10
화합물 sub 5 대신 화합물 sub 7(19 g, 77 mmol)을 사용한 것을 제외하고는, 제조예 8의 화합물 sub 8의 제조와 동일한 방법으로 화합물 sub 10(18 g, 수율 79%; MS:[M+H]+=555)을 제조하였다.The compound sub 10 (18 g, yield 79%; MS: [M + H] +) was prepared in the same manner as in the preparation of
제조예Manufacturing example 11: 화합물 sub 11의 제조 11: Preparation of compound sub 11
1) 화합물 A1의 제조1) Preparation of Compound A1
2000 mL 둥근 플라스크에 메틸 3-아미노벤조퓨란-2-카복실레이트(48 g, 0.25 mol) 및 우레아(75 g, 1.24 mol)의 혼합물을 200℃에서 2시간 동안 교반하였다. 고온의 반응 혼합물을 상온으로 냉각한 후, 수산화나트륨 용액에 붓고, 불순물을 여과하여 제거한 다음, 반응물을 산성화하여(HCl, 2N), 수득한 침전물을 건조시켜 화합물 F1을 수득하였다(35 g, 수율 70%).A mixture of methyl 3-aminobenzofuran-2-carboxylate (48 g, 0.25 mol) and urea (75 g, 1.24 mol) was stirred in a 2000 mL round-bottomed flask at 200 ° C for 2 hours. The reaction mixture was cooled to room temperature, poured into sodium hydroxide solution, the impurities were removed by filtration, the reaction product was acidified (HCl, 2N) and the obtained precipitate was dried to obtain Compound F1 (35 g, yield 70%).
(2) 화합물 sub 11의 제조(2) Preparation of compound sub 11
1000 mL 둥근 플라스크에 화합물 F1(35 g, 173 mmol) 및 옥시염화인(600 mL)의 혼합물을 환류 하에 6시간 동안 교반하였다. 반응 혼합물을 상온으로 냉각시키고, 강하게 교반하면서 얼음/물에 부어, 침전물을 생성하였다. 이로부터 수득한 반응물을 여과하여, 화합물 sub 11(32 g, 수율 78%, 백색 고체)을 수득하였다.A 1000 mL round flask was charged with a mixture of compound F1 (35 g, 173 mmol) and phosphorus oxychloride (600 mL) under reflux for 6 hours. The reaction mixture was cooled to room temperature and poured into ice / water with vigorous stirring to produce a precipitate. The resulting reaction product was filtered to obtain compound sub 11 (32 g, yield 78%, white solid).
제조예Manufacturing example 12: 화합물 sub 12의 제조 12: Preparation of compound sub 12
1) 화합물 G2의 제조1) Preparation of compound G2
화합물 sub 11(30 g, 118 mmol)과 페닐보로닉에시드(16 g, 129 mmol)을 테트라하이드로퓨란(300 mL)에 분산시킨 후, 2M 탄산칼륨수용액(aq. K2CO3)(176 mL, 352 mmol)을 첨가하고 테트라키스트리페닐포스피노팔라듐[Pd(PPh3)4](4 g, 1 mol%)을 넣은 후 12시간 동안 교반 환류하였다. 상온으로 온도를 낮추고 생성된 고체를 여과하였다. 여과된 고체를 테트라하이드로퓨란과 에틸아세테이트로 재결정하고 여과한 뒤, 건조하여 화합물 G2(28 g, 수율 81%; MS:[M+H]+=297)를 제조하였다.The compound sub 11 (30 g, 118 mmol) and phenylboronic acid (16 g, 129 mmol) were dispersed in tetrahydrofuran (300 mL), and a 2M aqueous potassium carbonate solution (aq. K 2 CO 3 ) It was added to mL, 352 mmol) and placed tetrakis triphenyl phosphino palladium [Pd (PPh 3) 4] (4 g, 1 mol%) was refluxed with stirring for 12 hours. The temperature was lowered to room temperature and the resulting solid was filtered. The filtered solid was recrystallized from tetrahydrofuran and ethyl acetate, filtered and dried to give Compound G2 (28 g, yield 81%; MS: [M + H] + = 297).
2) 화합물 sub 12의 제조2) Preparation of compound sub 12
화합물 G2(20 g, 70 mmol)과 화합물 sub 2(19 g, 77 mmol)을 테트라하이드로퓨란(300 mL)에 분산시킨 후, 2M 탄산칼륨수용액(aq. K2CO3)(105 mL, 210 mmol)을 첨가하고 테트라키스트리페닐포스피노팔라듐[Pd(PPh3)4](2 g, 1 mol%)을 넣은 후 12시간 동안 교반 환류하였다. 상온으로 온도를 낮추고 생성된 고체를 여과하였다. 여과된 고체를 테트라하이드로퓨란과 에틸아세테이트로 재결정하고 여과한 뒤, 건조하여 화합물 sub 12(29 g, 수율 91%; MS:[M+H]+=463)를 제조하였다.Compound 2 (20 g, 70 mmol) and compound sub 2 (19 g, 77 mmol) were dispersed in tetrahydrofuran (300 mL), and a 2M aqueous potassium carbonate solution (aq. K 2 CO 3 ) was added to the mmol), insert tetrakis triphenyl phosphino palladium [Pd (PPh 3) 4] (2 g, 1 mol%) was refluxed with stirring for 12 hours. The temperature was lowered to room temperature and the resulting solid was filtered. The filtrated solid was recrystallized from tetrahydrofuran and ethyl acetate, filtered and dried to give compound sub 12 (29 g, yield 91%; MS: [M + H] + = 463).
제조예Manufacturing example 13: 화합물 sub 13의 제조 13: Preparation of compound sub 13
1) 화합물 H2의 제조1) Preparation of Compound H2
화합물 sub 1(30 g, 118 mmol)과 화합물 sub 2(29 g, 118 mmol)을 테트라하이드로퓨란(300 mL)에 분산시킨 후, 2M 탄산칼륨수용액(aq. K2CO3)(176 mL, 352 mmol)을 첨가하고 테트라키스트리페닐포스피노팔라듐[Pd(PPh3)4](1.4 g, 1 mol%)을 넣은 후 12시간 동안 교반 환류하였다. 상온으로 온도를 낮추고 생성된 고체를 여과하였다. 여과된 고체를 테트라하이드로퓨란과 에틸아세테이트로 재결정하고 여과한 뒤, 건조하여 화합물 H2(35 g, 수율 71%; MS:[M+H]+=422)를 제조하였다.Compound 2 (30 g, 118 mmol) and compound sub 2 (29 g, 118 mmol) were dispersed in tetrahydrofuran (300 mL), and a 2M aqueous potassium carbonate solution (aq. K 2 CO 3 ) after addition of 352 mmol) and placed tetrakis triphenyl phosphino palladium [Pd (PPh 3) 4] (1.4 g, 1 mol%) was refluxed with stirring for 12 hours. The temperature was lowered to room temperature and the resulting solid was filtered. The filtered solid was recrystallized from tetrahydrofuran and ethyl acetate, filtered, and then dried to give compound H2 (35 g, yield 71%; MS: [M + H] + = 422).
2) 화합물 sub 13의 제조2) Preparation of compound sub 13
화합물 H2(20 g, 48 mmol)과 페닐보로닉에시드(6 g, 48 mmol)을 테트라하이드로퓨란(300 mL)에 분산시킨 후, 2M 탄산칼륨수용액(aq. K2CO3)(71 mL, 142 mmol)을 첨가하고 테트라키스트리페닐포스피노팔라듐[Pd(PPh3)4](0.5 g, 1 mol%)을 넣은 후 12시간 동안 교반 환류하였다. 상온으로 온도를 낮추고 생성된 고체를 여과하였다. 여과된 고체를 테트라하이드로퓨란과 에틸아세테이트로 재결정하고 여과한 뒤, 건조하여 화합물 sub 13(20 g, 수율 89%; MS:[M+H]+=463)를 제조하였다.Compound 2 (20 g, 48 mmol) and phenylboronic acid (6 g, 48 mmol) were dispersed in tetrahydrofuran (300 mL), and a 2M aqueous potassium carbonate solution (aq. K 2 CO 3 ) after the addition of, 142 mmol) and placed tetrakis triphenyl phosphino palladium [Pd (PPh 3) 4] (0.5 g, 1 mol%) was refluxed with stirring for 12 hours. The temperature was lowered to room temperature and the resulting solid was filtered. The filtrated solid was recrystallized from tetrahydrofuran and ethyl acetate, filtered and dried to give compound sub 13 (20 g, yield 89%; MS: [M + H] + = 463).
제조예Manufacturing example 14: 화합물 sub 14의 제조 14: Preparation of compound sub 14
1) 화합물 I2의 제조1) Preparation of compound I2
화합물 sub 11(30 g, 126 mmol)과 화합물 sub 2(31 g, 126 mmol)을 테트라하이드로퓨란(300 mL)에 분산시킨 후, 2M 탄산칼륨수용액(aq. K2CO3)(188 mL, 376 mmol)을 첨가하고 테트라키스트리페닐포스피노팔라듐[Pd(PPh3)4](1.4 g, 1 mol%)을 넣은 후 12시간 동안 교반 환류하였다. 상온으로 온도를 낮추고 생성된 고체를 여과하였다. 여과된 고체를 테트라하이드로퓨란과 에틸아세테이트로 재결정하고 여과한 뒤, 건조하여 화합물 I2(38 g, 수율 74%; MS:[M+H]+=406)를 제조하였다.Compound 2 (30 g, 126 mmol) and compound sub 2 (31 g, 126 mmol) were dispersed in tetrahydrofuran (300 mL), and a 2M aqueous potassium carbonate solution (aq. K 2 CO 3 ) after addition of 376 mmol) and placed tetrakis triphenyl phosphino palladium [Pd (PPh 3) 4] (1.4 g, 1 mol%) was refluxed with stirring for 12 hours. The temperature was lowered to room temperature and the resulting solid was filtered. The filtered solid was recrystallized from tetrahydrofuran and ethyl acetate, filtered and dried to give Compound I2 (38 g, yield 74%; MS: [M + H] + = 406).
2) 화합물 sub 14의 제조2) Preparation of compound sub 14
화합물 I2(20 g, 49 mmol)과 페닐보로닉에시드(7 g, 54 mmol)을 테트라하이드로퓨란(300 mL)에 분산시킨 후, 2M 탄산칼륨수용액(aq. K2CO3)(74 mL, 148 mmol)을 첨가하고 테트라키스트리페닐포스피노팔라듐[Pd(PPh3)4](0.6 g, 1 mol%)을 넣은 후 12시간 동안 교반 환류하였다. 상온으로 온도를 낮추고 생성된 고체를 여과하였다. 여과된 고체를 테트라하이드로퓨란과 에틸아세테이트로 재결정하고 여과한 뒤, 건조하여 화합물 sub 14(17 g, 수율 76%; MS:[M+H]+=447)를 제조하였다.Compound 2 (20 g, 49 mmol) and phenylboronic acid (7 g, 54 mmol) were dispersed in tetrahydrofuran (300 mL), and a 2M aqueous potassium carbonate solution (aq. K 2 CO 3 ) after the addition of, 148 mmol) and placed tetrakis triphenyl phosphino palladium [Pd (PPh 3) 4] (0.6 g, 1 mol%) was refluxed with stirring for 12 hours. The temperature was lowered to room temperature and the resulting solid was filtered. The filtered solid was recrystallized from tetrahydrofuran and ethyl acetate, filtered and dried to give compound sub 14 (17 g, yield 76%; MS: [M + H] + = 447).
실시예Example
실시예Example
1: 화합물 1의 제조 1: Preparation of
화합물 R1(12 g, 37 mmol)과 화합물 sub 8(20 g, 37 mmol)을 테트라하이드로퓨란(150 mL)에 분산시킨 후, 2M 탄산칼륨수용액(aq. K2CO3)(55 mL, 110 mmol)을 첨가하고 테트라키스트리페닐포스피노팔라듐[Pd(PPh3)4](2 g, 1 mol%)을 넣은 후 12시간 동안 교반 환류하였다. 상온으로 온도를 낮추고 생성된 고체를 여과하였다. 여과된 고체를 테트라하이드로퓨란과 에틸아세테이트로 재결정하고 여과한 뒤, 건조하여 화합물 1(19 g, 수율 78%; MS:[M+H]+=670)를 제조하였다.K 2 CO 3 (55 mL, 110 mmol) was added to a solution of the compound R1 (12 g, 37 mmol) and the compound sub 8 (20 g, 37 mmol) in tetrahydrofuran was added to the mmol), insert tetrakis triphenyl phosphino palladium [Pd (PPh 3) 4] (2 g, 1 mol%) was refluxed with stirring for 12 hours. The temperature was lowered to room temperature and the resulting solid was filtered. The filtered solid was recrystallized from tetrahydrofuran and ethyl acetate, filtered and dried to give Compound 1 (19 g, yield 78%; MS: [M + H] + = 670).
실시예Example
2: 화합물 2의 제조 2: Preparation of
화합물 sub 8 대신 화합물 sub 9(20 g, 37 mmol)을 사용한 것을 제외하고는, 실시예 1의 화합물 1의 제조와 동일한 방법으로 화합물 2(16 g, 수율 66%; MS:[M+H]+=670)을 제조하였다.(16 g, yield 66%; MS: [M + H]) was obtained in the same manner as in the preparation of the
실시예Example
3: 화합물 3의 제조 3: Preparation of
화합물 sub 8 대신 화합물 sub 10(20 g, 37 mmol)을 사용한 것을 제외하고는, 실시예 1의 화합물 1의 제조와 동일한 방법으로 화합물 3(17 g, 수율 70%; MS:[M+H]+=670)을 제조하였다.(17 g, yield 70%; MS: [M + H]) was obtained in the same manner as in the preparation of the
실시예Example
4: 화합물 4의 제조 4: Preparation of
화합물 R1 대신 화합물 R2(10 g, 40 mmol)을 사용한 것을 제외하고는, 실시예 1의 화합물 1의 제조와 동일한 방법으로 화합물 4(17 g, 수율 77%; MS:[M+H]+=595)을 제조하였다.(17 g, yield 77%; MS: [M + H] < + > = 70%) was obtained in the same manner as in the preparation of
실시예Example
5: 화합물 5의 제조 5: Preparation of
화합물 R1 대신 화합물 R3(10 g, 40 mmol)을 사용한 것을 제외하고는, 실시예 1의 화합물 1의 제조와 동일한 방법으로 화합물 5(19 g, 수율 85%; MS:[M+H]+=611)을 제조하였다.Compound 5 (19 g, yield 85%; MS: [M + H] < + >) was obtained in the same manner as in the preparation of
실시예Example
6: 화합물 6의 제조 6: Preparation of
화합물 R1 대신 화합물 R4(19 g, 40 mmol)을 사용한 것을 제외하고는, 실시예 1의 화합물 1의 제조와 동일한 방법으로 화합물 6(17 g, 수율 60%; MS:[M+H]+=786)을 제조하였다.(17 g, yield 60%; MS: [M + H] < + > = 60%) was obtained in the same manner as in the preparation of the
실시예Example
7: 화합물 7의 제조 7: Preparation of
화합물 R1 대신 화합물 R5(17 g, 40 mmol)을 사용한 것을 제외하고는, 실시예 1의 화합물 1의 제조와 동일한 방법으로 화합물 7(21 g, 수율 71%; MS:[M+H]+=836)을 제조하였다.(21 g, yield 71%; MS: [M + H] < + >) was obtained in the same manner as in the preparation of the
실시예Example
8: 화합물 8의 제조 8: Preparation of
화합물 R1 대신 화합물 R6(11 g, 40 mmol)을 사용한 것을 제외하고는, 실시예 1의 화합물 1의 제조와 동일한 방법으로 화합물 8(13 g, 수율 58%; MS:[M+H]+=621)을 제조하였다.Compound 8 (13 g, yield 58%; MS: [M + H] < + >) was obtained in the same manner as in the preparation of
실시예Example 9: 화합물 9의 제조 9: Preparation of compound 9
질소 분위기에서 화합물 sub 12(15 g, 34 mmol) 및 화합물 R7(11 g, 37 mmol)를 다이옥세인 150 ml에 넣고 교반 및 환류하였다. 이 후 포타슘포스페이트(10 g, 101 mmol)를 물 30 ml에 녹여 투입한 후 충분히 교반 후 비스(디벤질리딘아세톤)팔라듐(0.6 g, 3 mol%)과 트리사이클로헥실포스핀(0.6 g, 6 mol%)을 투입하였다. 24시간 반응 후 상온으로 온도를 낮추고 여과하였다. 여과물을 클로로포름과 물로 추출한 후 유기층을 황산마그네슘을 이용해 건조하였다. 이후 유기층을 감압증류 후 에틸 아세테이트를 이용해 재결정하였다. 생성된 고체를 여과 후 건조하여 화합물 9(15 g, 수율 70%; MS:[M+H]+=654)을 제조하였다.Compound 12 (15 g, 34 mmol) and compound R7 (11 g, 37 mmol) were added to 150 ml of dioxane in a nitrogen atmosphere and stirred and refluxed. Then, potassium phosphate (10 g, 101 mmol) was dissolved in 30 ml of water and the mixture was stirred sufficiently. Then, bis (dibenzylidineacetone) palladium (0.6 g, 3 mol%) and tricyclohexylphosphine mol%). After 24 hours of reaction, the temperature was lowered to room temperature and filtered. The filtrate was extracted with chloroform and water, and then the organic layer was dried with magnesium sulfate. The organic layer was then distilled under reduced pressure and recrystallized using ethyl acetate. The resulting solid was filtered and dried to obtain Compound 9 (15 g, yield 70%; MS: [M + H] + = 654).
실시예Example 10: 화합물 10의 제조 10: Preparation of compound 10
화합물 sub 12 대신 화합물 sub 13(17 g, 32 mmol)을 사용한 것을 제외하고는, 실시예 9의 화합물 9의 제조와 동일한 방법으로 화합물 10(17 g, 수율 79%; MS:[M+H]+=670)을 제조하였다.(17 g, yield 79%; MS: [M + H]) was obtained in the same manner as in the preparation of the compound 9 of Example 9, except that the compound sub 13 (17 g, 32 mmol) + = 670).
실시예Example 11: 화합물 11의 제조 11: Preparation of compound 11
화합물 sub 12 대신 화합물 sub 14(17 g, 34 mmol)을 사용한 것을 제외하고는, 실시예 9의 화합물 9의 제조와 동일한 방법으로 화합물 11(14 g, 수율 65%; MS:[M+H]+=654)을 제조하였다.(14 g, yield 65%; MS: [M + H]) was obtained in the same manner as in the preparation of the compound 9 of Example 9, except that the compound sub 14 (17 g, 34 mmol) + = 654).
실험예Experimental Example 1 One
ITO(indium tin oxide)가 1300 Å의 두께로 코팅된 유리 기판을 세제를 녹인 증류수에 넣고 초음파로 세척하였다. 이때, 세제로는 피셔사(Fischer Co.) 제품을 사용하였으며, 증류수로는 밀리포어사(Millipore Co.) 제품의 필터(Filter)를 이용하여 2차로 걸러진 증류수를 사용하였다. ITO 기판을 30분간 세척한 후 증류수로 2회 반복하여 초음파 세척을 10분간 진행하였다. 증류수 세척이 끝난 후, ITO 기판을 이소프로필알콜, 아세톤, 메탄올의 용제로 초음파 세척을 하고 건조시킨 후 플라즈마 세정기로 수송시켰다. 그리고, 산소 플라즈마를 이용하여 상기 ITO 기판을 5분간 세정한 후 진공 증착기로 수송시켰다. A glass substrate coated with ITO (indium tin oxide) having a thickness of 1300 Å was immersed in distilled water containing detergent and washed with ultrasonic waves. At this time, a Fischer Co. product was used as a detergent, and distilled water filtered by a secondary filter using a filter of Millipore Co. was used as distilled water. The ITO substrate was washed for 30 minutes and then washed twice with distilled water and ultrasonically cleaned for 10 minutes. After the distilled water was washed, the ITO substrate was ultrasonically washed with a solvent of isopropyl alcohol, acetone, and methanol, dried, and then transported to a plasma cleaner. Then, the ITO substrate was cleaned using oxygen plasma for 5 minutes, and then transported by a vacuum evaporator.
이렇게 준비된 ITO 전극 위에 하기 화합물 HI-1을 50 Å의 두께로 열 진공 증착하여 정공주입층을 형성하였다. 상기 정공주입층 위에 하기 화합물 HT-1을 250 Å의 두께로 열 진공 증착하여 정공수송층을 형성하고, 상기 정공수송층 위에 하기 화합물 HT-2를 50 Å의 두께로 진공 증착하여 전자저지층을 형성하였다. 이어서, 상기 전자저지층 위에 호스트 재료로서 상기 실시예 1에서 제조한 화합물 1과, 상기 화합물 1의 중량에 대하여 12 중량%의 인광 도펀트(하기 화합물 GD-1)을 공증착하여 막 두께 400 Å의 발광층을 형성하였다. 상기 발광층 위에 하기 화합물 ET-1을 250 Å의 두께로 진공 증착하여 전자수송층을 형성하고, 하기 화합물 ET-2와 상기 화합물 ET-2의 중량에 대하여 2 중량%의 Li을 공증착하여 막 두께 100 Å의 전자주입층을 형성하였다. 상기 전자주입층 위에 1000 Å 두께로 알루미늄을 증착하여 음극을 형성하였다.On the prepared ITO electrode, the following compound HI-1 was thermally vacuum-deposited to a thickness of 50 A to form a hole injection layer. The following compound HT-1 was thermally vacuum deposited on the hole injection layer to form a hole transport layer, and the following compound HT-2 was vacuum-deposited to a thickness of 50 Å on the hole transport layer to form an electron blocking layer . Subsequently, a
상기의 과정에서 유기물의 증착 속도는 0.4 내지 0.7 Å/sec를 유지하였고, 알루미늄은 2 Å/sec의 증착 속도를 유지하였으며, 증착시 진공도는 1×10-7 내지 5×10-8 torr를 유지하여 유기 발광 소자를 제작하였다.In the above process, the deposition rate of the organic material was maintained at 0.4 to 0.7 A / sec, the deposition rate of aluminum was maintained at 2 A / sec, and the degree of vacuum during deposition was maintained at 1 × 10 -7 to 5 × 10 -8 torr Thereby preparing an organic light emitting device.
실험예Experimental Example 2 내지 11 2 to 11
화합물 1 대신 하기 표 1에 기재된 바와 같은 화합물을 사용하는 것을 제외하고는, 상기 실험예 1과 동일한 방법으로 유기 발광 소자를 제작하였다. An organic light emitting device was fabricated in the same manner as in Experimental Example 1, except that the compound described in Table 1 was used in place of
비교실험예Comparative Experimental Example 1 내지 3 1 to 3
화합물 1 대신 하기 표 1에 기재된 바와 같은 화합물을 사용하는 것을 제외하고는, 상기 실험예 1과 동일한 방법으로 유기 발광 소자를 제작하였다. 하기 표 1에서, 화합물 a, 화합물 b, 및 화합물 c는 각각 하기와 같다.An organic light emitting device was fabricated in the same manner as in Experimental Example 1, except that the compound described in Table 1 was used in place of
상기 실험예 및 비교 실험예에서 제조한 유기 발광 소자에 전류를 인가하여, 구동 전압, 효율, 색좌표 및 수명을 측정하고 그 결과를 하기 표 1에 나타내었다. 이때, 수명(LT95)은 초기 휘도를 100%로 하였을 때 휘도가 95%로 감소하는데 소요되는 시간으로서 정의되며, 20 mA/cm2의 전류 밀도에서 측정하였다.The driving voltage, the efficiency, the color coordinate, and the lifetime were measured by applying current to the organic light emitting device manufactured in the Experimental Example and the Comparative Experimental Example, and the results are shown in Table 1 below. The lifetime (LT95) is defined as the time required for the luminance to decrease to 95% when the initial luminance is taken as 100%, and is measured at a current density of 20 mA / cm 2 .
(@10 mA/cm2)Voltage (V)
(@ 10 mA / cm 2 )
(@10 mA/cm2)Efficiency (Cd / A)
(@ 10 mA / cm 2 )
(x, y)Color coordinates
(x, y)
(@20 mA/cm2)Lifetime (LT95, h)
(@ 20 mA / cm 2 )
상기 표 1에 나타난 바와 같이, 본 발명의 일 구현예에 따른 화학식 1로 표시되는 화합물은 유기 발광 소자의 인광 호스트 재료로 사용되어 기존의 화합물 대비 낮은 전압에서 구동 가능하며, 높은 효율 및 긴 수명을 가지는 유기 발광 소자를 제공할 수 있음을 확인할 수 있었다.As shown in Table 1, the compound represented by
1: 기판 2: 양극
3: 발광층 4: 음극
5: 정공주입층 6: 정공수송층
7: 발광층 8: 전자수송층1: substrate 2: anode
3: light emitting layer 4: cathode
5: Hole injection layer 6: Hole transport layer
7: light emitting layer 8: electron transporting layer
Claims (10)
[화학식 1]
상기 화학식 1에서,
X1 및 X2는 각각 독립적으로, NR1, CR2R3, S, 또는 O이고,
A는 피리미딘 고리이고,
L은 단일 결합, C6-60 아릴렌; 또는 O, N, Si 및 S 중 1개 이상을 포함하는 C2-60 헤테로아릴렌이고,
Ar1은 C6-60 아릴이고,
Ar2는 하기로 구성되는 군으로부터 선택되는 어느 하나이고,
X3는 N-(페닐), N-(비페닐릴), N-(나프틸), N-(트리페닐레닐), N-(9,9-디메틸플루오레닐), N-(9-페닐-카바졸릴), C(CH3)2, 또는 C(페닐)2이고,
X4는 NR1, CR2R3, S, 또는 O이고,
R1 내지 R3, R6 및 R7은 각각 독립적으로 수소; C1-60 알킬; C6-60 아릴; 또는 O, N, Si 및 S 중 1개 이상을 포함하는 C2-60 헤테로고리기이고,
n 및 m 각각 독립적으로 0 또는 1이다.
A compound represented by the following formula (1):
[Chemical Formula 1]
In Formula 1,
X 1 and X 2 are each independently NR 1 , CR 2 R 3 , S, or O,
A is a pyrimidine ring,
L is a single bond, C 6-60 arylene; Or C 2-60 heteroarylene containing one or more of O, N, Si and S,
Ar < 1 > is C 6-60 aryl,
Ar 2 is any one selected from the group consisting of:
X 3 is selected from the group consisting of N- (phenyl), N- (biphenylyl), N- (naphthyl), N- (triphenylenyl) and carbazolyl), C (CH 3) 2, or C (phenyl) 2, phenyl
X 4 is NR 1 , CR 2 R 3 , S, or O,
R 1 to R 3 , R 6 and R 7 are each independently hydrogen; C 1-60 alkyl; C 6-60 aryl; Or a C 2-60 heterocyclic group containing at least one of O, N, Si and S,
n and m are each independently 0 or 1;
상기 화학식 1로 표시되는 화합물은, 하기 화학식 1-1 내지 1-4 중 어느 하나로 표시되는 화합물인 것을 특징으로 하는,
화합물:
[화학식 1-1]
[화학식 1-2]
[화학식 1-3]
[화학식 1-4]
.
The method according to claim 1,
The compound represented by the formula (1) is a compound represented by any one of the following formulas (1-1) to (1-4)
compound:
[Formula 1-1]
[Formula 1-2]
[Formula 1-3]
[Formula 1-4]
.
상기 화학식 1로 표시되는 화합물은, 하기 화학식 2-1 내지 2-4 중 어느 하나로 표시되는 화합물인 것을 특징으로 하는,
화합물:
[화학식 2-1]
[화학식 2-2]
[화학식 2-3]
[화학식 2-4]
.
The method according to claim 1,
The compound represented by the formula (1) is a compound represented by any one of the following formulas (2-1) to (2-4)
compound:
[Formula 2-1]
[Formula 2-2]
[Formula 2-3]
[Chemical Formula 2-4]
.
X1는 N-(페닐), C(CH3)2, S, 또는 O인,
화합물.
The method according to claim 1,
X 1 is N- (phenyl), C (CH 3 ) 2 , S, or O,
compound.
X2는 S, 또는 O인,
화합물.
The method according to claim 1,
X 2 is S, or O,
compound.
Ar1은 페닐, 비페닐릴, 나프틸, 페난쓰레닐, 또는 트리페닐레닐인,
화합물.
The method according to claim 1,
Ar 1 is phenyl, biphenyl, naphthyl, phenanthrenyl, or triphenylenyl,
compound.
L은 단일 결합인,
화합물.
The method according to claim 1,
L is a single bond,
compound.
Ar2는 하기로 구성되는 군으로부터 선택되는 어느 하나인,
화합물:
상기에서,
X3는 N-(페닐), N-(비페닐릴), N-(나프틸), N-(트리페닐레닐), N-(9,9-디메틸플루오레닐), N-(9-페닐-카바졸릴), C(CH3)2, 또는 C(페닐)2이고,
X4는 N-(페닐), C(CH3)2, S, 또는 O이고,
R6는 수소, 페닐, (3,5-디페닐)페닐, 디벤조[b,d]퓨라닐, 또는 디벤조[b,d]싸이오페닐이다.
The method according to claim 1,
Ar 2 is any one selected from the group consisting of:
compound:
In the above,
X 3 is selected from the group consisting of N- (phenyl), N- (biphenylyl), N- (naphthyl), N- (triphenylenyl) and carbazolyl), C (CH 3) 2, or C (phenyl) 2, phenyl
X 4 is N- (phenyl), C (CH 3 ) 2 , S, or O,
R 6 is hydrogen, phenyl, (3,5-diphenyl) phenyl, dibenzo [b, d] furanyl, or dibenzo [b, d] thiophenyl.
상기 화합물은 하기 화합물로 구성되는 군으로부터 선택되는 어느 하나인 것을 특징으로 하는,
화합물:
The method according to claim 1,
Wherein said compound is any one selected from the group consisting of the following compounds:
compound:
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