KR101862806B1 - Exhaust sysyem of atomic layer deposition apparatus - Google Patents
Exhaust sysyem of atomic layer deposition apparatus Download PDFInfo
- Publication number
- KR101862806B1 KR101862806B1 KR1020150188205A KR20150188205A KR101862806B1 KR 101862806 B1 KR101862806 B1 KR 101862806B1 KR 1020150188205 A KR1020150188205 A KR 1020150188205A KR 20150188205 A KR20150188205 A KR 20150188205A KR 101862806 B1 KR101862806 B1 KR 101862806B1
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- South Korea
- Prior art keywords
- gas
- discharge line
- precursor
- atomic layer
- layer deposition
- Prior art date
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- 238000000231 atomic layer deposition Methods 0.000 title claims abstract description 47
- 239000002243 precursor Substances 0.000 claims abstract description 61
- 238000007599 discharging Methods 0.000 claims abstract description 6
- 239000000376 reactant Substances 0.000 claims abstract description 5
- 239000007789 gas Substances 0.000 claims description 142
- 239000012495 reaction gas Substances 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 15
- 239000011261 inert gas Substances 0.000 claims description 6
- 239000010409 thin film Substances 0.000 description 16
- 230000008569 process Effects 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000005137 deposition process Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000005494 condensation Effects 0.000 description 2
- 238000009833 condensation Methods 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
-
- H01L21/205—
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
- H01L2021/60007—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation involving a soldering or an alloying process
- H01L2021/60022—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation involving a soldering or an alloying process using bump connectors, e.g. for flip chip mounting
- H01L2021/60097—Applying energy, e.g. for the soldering or alloying process
- H01L2021/60172—Applying energy, e.g. for the soldering or alloying process using static pressure
- H01L2021/60187—Isostatic pressure, e.g. degassing using vacuum or pressurised liquid
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
An exhaust system of an atomic layer deposition apparatus is disclosed. The exhaust system 1 of the atomic layer deposition apparatus according to the present invention is an exhaust system 1 of an atomic layer deposition apparatus in which a chamber 110 in which atomic layer deposition (ALD) And a gas exhaust part 200 for exhausting the supplied precursor gas g1 and reactant gas g2 and the gas exhaust part 200 includes a main exhaust line 210, A first discharge line 220 and a second discharge line 230 separated from the line 210 and discharging the precursor gas g1 to the first discharge line 220 and the second discharge line 230, And an APC (auto pressure controller) 250 valve is installed on the second discharge line 230. As shown in FIG.
Description
The present invention relates to an exhaust system of an atomic layer deposition apparatus. More particularly, the present invention relates to an exhaust system of an atomic layer deposition apparatus, which can control emission of a precursor gas and a reactive gas used for atomic layer deposition, respectively, to improve emission efficiency and improve the quality of atomic layer thin film.
In order to manufacture a semiconductor device, a process of depositing a necessary thin film on a substrate such as a silicon wafer is essential. Sputtering, chemical vapor deposition (CVD), and atomic layer deposition (ALD) are mainly used for the thin film deposition process.
Atomic layer deposition is a technique for depositing a thin film of an atomic layer on a substrate by alternately supplying a precursor gas, a reactant gas and a purge gas. Since atomic layer deposition utilizes surface reactions to overcome the limitations of step coverage, it is suitable for forming fine patterns having a high aspect ratio and has excellent electrical and physical properties of the thin film.
1 is a schematic view showing an exhaust system of a conventional atomic layer deposition apparatus.
A conventional exhaust system of an atomic layer deposition apparatus includes a main body 10 (or a process tube) which forms a
The
However, in the conventional
Further, as the mean free path of the precursor gas g1 becomes longer as the precursor gas g1 is easily discharged from the
SUMMARY OF THE INVENTION The present invention has been made to overcome the above problems of the prior art, and it is an object of the present invention to improve the exhaust efficiency of the precursor gas used for atomic layer deposition and to control the quality of atomic layer thin film And an exhaust system of an atomic layer deposition apparatus that has been improved.
It is another object of the present invention to provide an exhaust system of an atomic layer deposition apparatus that prevents deposition of a thin film on the inner wall of an APC valve, improves the life of the APC valve, and prevents contaminants from entering the substrate .
It is another object of the present invention to provide an exhaust system for an atomic layer deposition apparatus capable of reducing the size of an APC valve to reduce the cost of the apparatus.
In order to accomplish the above object, an exhaust system of an atomic layer deposition (ALD) apparatus according to an embodiment of the present invention is an exhaust system of an atomic layer deposition (ALD) apparatus in which a chamber in which atomic layer deposition is performed is formed A gas discharge unit for discharging a precursor gas and a reactant gas supplied to the chamber, the gas discharge unit including a main discharge line, a first discharge line separated from the main discharge line, Wherein the precursor gas is discharged to the first discharge line, the reactive gas is discharged to the second discharge line, and an APC (auto pressure controller) valve is installed on the second discharge line .
A stop valve may be provided on the first discharge line.
A stop valve may be provided in front of the APC valve on the second discharge line.
An exhaust pump may be disposed at an end of the first discharge line and the second discharge line to form an exhaust pressure.
A pressure control unit may be disposed on the main discharge line to supply a precursor gas passing through the main discharge line and a ballast gas for controlling the pressure of the reaction gas.
The pressure control unit may include: a vacuum gauge for measuring a pressure of the main discharge line; A ballast gas line connected to the main discharge line; A control valve for controlling a supply amount of the ballast gas supplied through the ballast gas line; And a module controller for communicating with and controlling the vacuum gauge and the control valve.
The ballast gas may be an inert gas.
The ballast gas may lower the partial pressure of the precursor gas to prevent the precursor gas from condensing on the inner wall of at least one of the main discharge line and the first discharge line.
The pressure control unit may include an electric pressure controller (EPC).
The EPC can be provided with a capacitance pressure gauge inside.
According to the present invention, the exhaust gas efficiency of the precursor gas used for the atomic layer deposition is improved and the exhaust gas is finely controlled to improve the quality of the atomic layer thin film.
Further, the present invention has an effect of preventing the thin film from being deposited on the inner wall of the APC valve, improving the life of the APC valve, and preventing contaminants from entering the substrate.
Further, the present invention has the effect of reducing the size of the APC valve and lowering the cost of the apparatus.
1 is a schematic view showing an exhaust system of a conventional atomic layer deposition apparatus.
2 and 3 are schematic views of an exhaust system of an atomic layer deposition apparatus according to a first embodiment of the present invention.
4 is a schematic view of an exhaust system of an atomic layer deposition apparatus according to a second embodiment of the present invention.
5 is a schematic view of an exhaust system of an atomic layer deposition apparatus according to a third embodiment of the present invention.
The following detailed description of the invention refers to the accompanying drawings, which illustrate, by way of illustration, specific embodiments in which the invention may be practiced. These embodiments are described in sufficient detail to enable those skilled in the art to practice the invention. It should be understood that the various embodiments of the present invention are different, but need not be mutually exclusive. For example, certain features, structures, and characteristics described herein may be implemented in other embodiments without departing from the spirit and scope of the invention in connection with an embodiment. It is also to be understood that the position or arrangement of the individual components within each disclosed embodiment may be varied without departing from the spirit and scope of the invention. The following detailed description is, therefore, not to be taken in a limiting sense, and the scope of the present invention is to be limited only by the appended claims, along with the full scope of equivalents to which such claims are entitled, if properly explained. In the drawings, like reference numerals refer to the same or similar functions throughout the several views, and length and area, thickness, and the like may be exaggerated for convenience.
Hereinafter, an exhaust system of an atomic layer deposition apparatus according to embodiments of the present invention will be described in detail with reference to the accompanying drawings.
2 and 3 are schematic views of an exhaust system of an atomic layer deposition apparatus according to a first embodiment of the present invention.
Referring to FIG. 2, in the
The
The
The
An automatic pressure controller (APC)
Accordingly, the first embodiment of the present invention allows the precursor gas g1 to be exhausted quickly because the
Also, since the reaction gas g2 passes through the
A stop valve 260 (or an angle valve) may be provided on the
3, in addition to the
The exhaust pumps 280 and 290 are connected to the ends of the first and
4 is a schematic view of an exhaust system of an atomic layer deposition apparatus according to a second embodiment of the present invention. The configuration of the
Referring to FIG. 4, a
The ballast gas g3 supplied on the
The
The
The
The ballast gas g3 is supplied onto the
In particular, the ballast gas (g3) is preferably mixed with the precursor gas (g1). Thus, it is possible to prevent the ballast gas (g3) from being discharged from the
In addition, the ballast gas g3 is supplied to prevent the gases g1 and g2 from being condensed, thereby improving the durability of the apparatus and preventing adsorption to the inner walls of the
5 is a schematic view of an exhaust system of an atomic layer deposition apparatus according to a third embodiment of the present invention. The configuration of the
Referring to FIG. 5, a pressure control unit 240 'may be installed on the
The ballast gas g3 supplied on the
The pressure control unit 240 'may include a ballast gas line 244', an electric pressure controller (EPC) 248, and the like.
The
The ballast gas line 244 'is connected to the
The ballast gas g3 is supplied onto the
As described above, since the exhaust system of the atomic layer deposition apparatus of the present invention uses the APC valve only for the control of the reaction gas, the exhaust gas efficiency of the precursor gas is improved and the exhaust gas of the reaction gas is finely controlled, There is an effect that can be improved.
It prevents the deposition of thin films on the inner wall of the APC valve, improves the life of the APC valve, prevents condensation on the inner walls of each discharge line and valve, and prevents condensed gas from entering the substrate in the form of particles. There is an effect that can be done.
Further, since the APC valve is provided only in the second discharge line, the apparatus cost can be reduced by using the reduced-size APC valve.
While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is clearly understood that the same is by way of illustration and example only and is not to be taken in conjunction with the present invention. Variations and changes are possible. Such variations and modifications are to be considered as falling within the scope of the invention and the appended claims.
1: Exhaust system of atomic layer deposition apparatus
100:
110: chamber
200: gas discharge portion
210: main discharge line
220: first discharge line
230: second discharge line
240: pressure control section
250: APC valve
260, 270: Stop valve
280, 290: Exhaust pump
g1: precursor gas
g2: reaction gas
g3: ballast gas
Claims (10)
And a gas discharge unit for discharging a precursor gas and a reactant gas supplied to the chamber,
The gas discharge portion includes a main discharge line, a first discharge line and a second discharge line separated from the main discharge line,
The precursor gas is discharged to the first discharge line, the reaction gas is discharged to the second discharge line,
An APC valve is installed on only the second discharge line to control the discharge rate of the reactive gas,
The APC valve controls the rate at which the reactive gas is discharged to the second discharge line to be slower than the rate at which the precursor gas is discharged to the first discharge line,
Said precursor adsorbing said precursor to a substrate in said chamber with a mean free path of said precursor gas being longer than an average free path of said precursor gas, said reaction gas having a slower exit rate than said precursor gas, So as to react with the precursor of the atomic layer deposition apparatus.
And a stop valve is provided on the first discharge line.
And a stop valve is provided in front of the APC valve on the second discharge line.
Wherein an exhaust pump for generating an exhaust pressure is disposed at an end of the first discharge line and the second discharge line.
And a pressure control unit for supplying a ballast gas for controlling the pressure of the precursor gas and the reactive gas passing through the main discharge line is provided on the main discharge line. .
The pressure control unit includes:
A vacuum gauge for measuring the pressure of the main discharge line;
A ballast gas line connected to the main discharge line;
A control valve for controlling a supply amount of the ballast gas supplied through the ballast gas line; And
A module controller for communicating with and controlling the vacuum gauge and the control valve
And an exhaust system of the atomic layer deposition apparatus.
Wherein the ballast gas is an inert gas.
Wherein the ballast gas lowers the partial pressure of the precursor gas to prevent the precursor gas from condensing on the inner wall of at least one of the main discharge line and the first discharge line.
Wherein the pressure control unit includes an electric pressure controller (EPC).
Wherein the EPC has a capacitance pressure gauge installed therein.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020150188205A KR101862806B1 (en) | 2015-12-29 | 2015-12-29 | Exhaust sysyem of atomic layer deposition apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020150188205A KR101862806B1 (en) | 2015-12-29 | 2015-12-29 | Exhaust sysyem of atomic layer deposition apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20170078068A KR20170078068A (en) | 2017-07-07 |
| KR101862806B1 true KR101862806B1 (en) | 2018-05-31 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020150188205A KR101862806B1 (en) | 2015-12-29 | 2015-12-29 | Exhaust sysyem of atomic layer deposition apparatus |
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| KR (1) | KR101862806B1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020069206A1 (en) * | 2018-09-28 | 2020-04-02 | Lam Research Corporation | Vacuum pump protection against deposition byproduct buildup |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100498467B1 (en) * | 2002-12-05 | 2005-07-01 | 삼성전자주식회사 | Apparatus for atomic layer deposition with preventing powder generation in exhaust paths |
-
2015
- 2015-12-29 KR KR1020150188205A patent/KR101862806B1/en active IP Right Grant
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100498467B1 (en) * | 2002-12-05 | 2005-07-01 | 삼성전자주식회사 | Apparatus for atomic layer deposition with preventing powder generation in exhaust paths |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020069206A1 (en) * | 2018-09-28 | 2020-04-02 | Lam Research Corporation | Vacuum pump protection against deposition byproduct buildup |
| US11031215B2 (en) | 2018-09-28 | 2021-06-08 | Lam Research Corporation | Vacuum pump protection against deposition byproduct buildup |
| US11710623B2 (en) | 2018-09-28 | 2023-07-25 | Lam Research Corporation | Vacuum pump protection against deposition byproduct buildup |
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| Publication number | Publication date |
|---|---|
| KR20170078068A (en) | 2017-07-07 |
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