KR101854875B1 - Display device and fabrication method thereof - Google Patents

Abstract

The display device includes a substrate, pixels provided on the substrate, and a color filter portion provided between the substrate and the pixels. The color filter portion includes a color filter corresponding to the pixel and a black matrix provided on at least one side of the color filter. The pixel includes a cover layer defining a tunnel-like cavity on the substrate, an image display layer provided in the tunnel-shaped cavity, and a first electrode and a second electrode that are insulated from each other to provide an electric field to the image display layer . The tunnel-shaped cavity is formed by forming a sacrificial layer and wet-etching the sacrificial layer.

Description

DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME

The present invention relates to a display device and a method of manufacturing the same.

Recently, display devices such as liquid crystal display devices and electrophoretic display devices have been widely used instead of conventional CRTs.

The display device includes two substrates facing each other and an image display layer such as a liquid crystal layer or an electrophoretic layer interposed between the two substrates. In the display device, the two substrates are adhered to each other and the gap between the two substrates is maintained such that the image display layer is provided between the two substrates.

In order to manufacture the display device, it is necessary to form a spacer for maintaining a gap between the two substrates on one of the two substrates, and to bond the other substrate to the spacer using an adhesive .

As a result, the display device manufacturing process becomes complicated and the cost increases.

SUMMARY OF THE INVENTION An object of the present invention is to provide a method of manufacturing a display device that is simple and low in cost.

Another object of the present invention is to provide a display device manufactured using the above method.

A display device according to an embodiment of the present invention includes a substrate, a pixel provided on the substrate, and a color filter portion provided between the substrate and the pixel. The color filter portion includes a color filter corresponding to the pixel and a black matrix provided on at least one side of the color filter.

The pixel includes a cover layer defining a tunnel-like cavity on the substrate, an image display layer provided in the tunnel-shaped cavity, and a first electrode and a second electrode that are insulated from each other to provide an electric field to the image display layer .

In one embodiment of the present invention, the second electrode may be opposed to the first electrode with the image display layer interposed therebetween. In another embodiment of the present invention, the first electrode and the second electrode May be provided between the image display layer and the color filter portion.

Wherein the first electrode has a plurality of first branches and the second electrode has a plurality of second branches, the first branches and the second branches being alternately arranged in a plane, The first electrode is provided as a through plate, the second electrode has a plurality of branches, and the branches can overlap with the first electrode in a plane.

The cover layer may be formed of a transparent material, and may further include an inorganic insulating layer provided between the sacrificial layer and the cover layer.

The image display layer may be a liquid crystal layer or an electrophoretic layer. When the image display layer is a liquid crystal layer, the liquid crystal layer may be a nematic liquid crystal, a blue liquid crystal, or a cholesteric liquid crystal.

A thin film transistor for driving the pixel may be provided between the substrate and the color filter portion.

According to an embodiment of the present invention, there is provided a method of manufacturing a semiconductor device, comprising: forming a first electrode on a substrate; forming a sacrificial layer extending in a first direction on the first electrode; Forming a second electrode in two directions, forming a cover layer covering the second electrode, wet-etching the sacrificial layer to form a tunnel-like cavity between the first electrode and the second electrode, A display device according to an exemplary embodiment of the present invention can be manufactured by forming an image display layer on the first electrode, covering the second electrode, and forming an encapsulating film that seals the tunnel-shaped cavity.

A color filter portion including the color filter and the black matrix may be formed before forming the first electrode.

The second electrode is formed by forming a conductive film on the sacrificial layer, applying a positive type photoresist on the conductive film, exposing and developing the photoresist to form an electrode pattern, and using the electrode pattern as a mask, Patterning the conductive film, and exposing and developing the electrode pattern to remove the electrode pattern. At this time, the sacrificial layer is a negative type photoresist, and the cover layer may be made of a positive type photoresist.

Alternatively, according to an embodiment of the present invention, there is provided a method of forming a color filter portion including a color filter and a black matrix on a substrate, and forming a pixel on the color filter portion. The pixel includes a first electrode, an electrode portion including a second electrode insulated from the first electrode, a sacrificial layer extending in a first direction on the electrode portion, Forming a cover layer extending in a second direction intersecting with the first direction; wet-etching the sacrificial layer to form a tunnel-like cavity between the electrode portion and the cover layer; And forming a sealing film covering the cover layer and sealing the tunnel-shaped cavity, a display device according to an embodiment of the present invention can be manufactured. Here, the sacrificial layer may be a positive type photoresist, and the cover layer may be a negative type photoresist.

According to the embodiments of the present invention, manufacturing time and cost are significantly reduced in manufacturing the display device. Further, according to the embodiments of the present invention, it is easy to increase the size of a display device by providing a display device manufacturing method with low cost and time and high uniformity.

1A is a plan view of a display device according to an embodiment of the present invention.
FIG. 1B is a plan view showing a part of a display apparatus according to an embodiment of the present invention shown in FIG. 1A.
FIG. 2A is a cross-sectional view taken along lines I-I 'and IV-IV' of FIG. 1B.
2B is a cross-sectional view taken along line II-II 'of FIG. 1B.
2C is a cross-sectional view taken along line III-III 'and line V-V' of FIG. 1B.
3 is a flowchart sequentially illustrating a method of manufacturing a display device according to an embodiment of the present invention.
4A to 8A are plan views showing a part of a method of manufacturing a display device according to an embodiment of the present invention.
FIGS. 4B to 9B are cross-sectional views taken along lines I-I ', IV-IV' and V-V 'in FIGS. 4A to 8A.
9A to 15A are sequential sectional views corresponding to line II-II 'in FIG. 8A.
9B to 15B are sequential sectional views corresponding to line III-III 'in FIG. 8A.
16 is a plan view showing a display device according to another embodiment of the present invention.
17A is a cross-sectional view taken along the line VI-VI 'and IX-IX' in FIG.
FIG. 17B is a cross-sectional view taken along line VII-VII 'of FIG. 16;
Fig. 17C is a cross-sectional view taken along lines VIII-VIII 'and X-X' in Fig. 16;
18 is a flowchart sequentially illustrating a method of manufacturing a display device according to an embodiment of the present invention.
Figs. 19A to 22A are cross-sectional views corresponding to line VII-VII 'in Fig.
Figs. 19B to 22B are cross-sectional views corresponding to line VIII-VIII 'in Fig.
Figs. 23A, 23B and 23C are cross-sectional views of a display device according to another embodiment of the present invention, each of which corresponds to Fig. 1B.
24 is a flowchart sequentially illustrating a method of manufacturing a display device according to another embodiment of the present invention.
25, 26, 27A to 35A, and 27B to 35B are cross-sectional views showing a part of a method of manufacturing a display device according to still another embodiment of the present invention, each of which corresponds to FIG. 1B .

 1A is a plan view of a display device according to an embodiment of the present invention. FIG. 1B is a plan view showing a part of a display apparatus according to an embodiment of the present invention shown in FIG. 1A. 2B is a cross-sectional view taken along a line II-II 'in FIG. 1B, and FIG. 2C is a cross-sectional view taken along line III-III' and V-V ' to be.

Referring to FIG. 1A, a display device according to embodiments of the present invention may have a plurality of pixels PX, and the pixels PX are arranged in a matrix form having a plurality of rows and a plurality of rows. Since the pixels PX have the same structure, only one pixel PX will be described as an example for convenience of explanation. Here, in FIG. 1B and FIGS. 2A to 2C, only one pixel PX is shown for convenience of explanation. Here, the pixel PX has a rectangular shape elongated in one direction, but is not limited thereto. The shape of the pixel PX in the plane may be variously modified such as a V shape, a Z shape, and the like.

Referring to FIGS. 1A, 1B, 2A, 2B, and 2C, a display device according to an embodiment of the present invention includes a substrate BS, a color filter portion provided on the substrate BS, ).

The substrate (BS) may be a transparent or opaque insulating substrate, such as a silicon substrate, a glass substrate, a plastic substrate, or the like. The substrate BS comprises a pixel region PA provided with a plurality of pixels PX and a pad region PDA provided at least one side of the pixel region PA. The pixel area PA includes a display area DA corresponding to each pixel on a one-to-one basis and a non-display area NDA provided on at least one side of the display area DA and not displaying an image.

A wiring portion for transmitting a signal to the pixel PX and a thin film transistor (TFT) for driving the pixel PX are provided on the substrate BS. The wiring portion is provided in the non-display region NDA of the pad region PDA and the pixel region PA and the thin film transistor TFT is provided in the non-display region NDA.

The wiring portion includes a gate line GL, a data line DL, a common voltage line CML, a gate pad portion GPP, and a data pad portion DPP provided in the non-display area NDA. The gate pad unit GPP and the data pad unit DPP will be described later.

The gate line GL extends in the first direction D1 to the substrate BS.

A first insulating layer INS1 is provided on the gate line GL. The first insulating layer INS1 may be made of an insulating material, for example, silicon nitride or silicon oxide.

The data line DL is insulated from the gate line GL via the first insulating layer INS1 on the substrate BS. The data lines DL extend in a second direction D2 intersecting the first direction D1.

The common voltage line CML may be formed along at least a part of the edge of the pixel area PA in the non-display area NDA and may be provided in a form surrounding the pixel area PA . The common voltage line CML may be formed of the same material as the gate line GL. The thin film transistor TFT is connected to the gate line GL and the data line DL and includes a gate electrode GE, a semiconductor layer SM, a source electrode SE, and a drain electrode DE do.

The gate electrode GE protrudes from the gate line GL or is provided on a partial area of the gate line GL. The gate line GL and the gate electrode GE may be formed of a metal. The gate electrode GE may be made of nickel, chromium, molybdenum, aluminum, titanium, copper, tungsten, or an alloy containing them. The gate electrode GE may be formed of a single film or multiple films using the metal. For example, the gate electrode GE may be a triple film in which molybdenum, aluminum, and molybdenum are sequentially laminated, or a double film in which titanium and copper are sequentially laminated. Or a single film of an alloy of titanium and copper.

The first insulating layer INS1 is provided on the front surface of the substrate BS to cover the gate electrode GE.

The semiconductor layer SM is provided on the gate line GL with the first insulating film INS1 interposed therebetween. The source electrode SE is branched and provided from the data line DL and overlapped on the semiconductor layer SM. The drain electrode DE is provided to be spaced from the source electrode SE on the semiconductor layer SM. Here, the semiconductor layer SM forms a conductive channel between the source electrode SE and the drain electrode DE.

Each of the source electrode SE and the drain electrode DE may be formed of a conductive material such as a metal. Each of the source electrode SE and the drain electrode DE may be formed of a single metal, but may be formed of two or more kinds of metals, or an alloy of two or more kinds of metals. For example, the source electrode SE and the drain electrode DE may be formed of nickel, chromium, molybdenum, aluminum, titanium, copper, tungsten, or an alloy thereof. Each of the source electrode SE and the drain electrode DE may be formed as a single layer or a multilayer. For example, each of the source electrode SE and the drain electrode DE may be formed of a double layer made of titanium and copper.

The color filter portion is provided on the thin film transistor (TFT). The color filter section includes a color filter (CF) and a black matrix (BM).

The color filter CF is for providing color to the light passing through each pixel. The color filter CF may be any one of a red color filter, a green color filter, and a blue color filter, and may be provided corresponding to each pixel area PA. In addition, the color filter CF may further include a color other than the color, for example, a white color filter. In the color filter CF, color filters CF having different colors may be arranged so that adjacent pixels PX are different colors when the pixels are provided in plural. Here, although not shown in the embodiment of the present invention, the color filters CF may be partially overlapped by the adjacent color filters CF at the boundaries of the adjacent pixels PX.

The black matrix BM is provided in the non-display area NDA to block unnecessary light in realizing an image. The black matrix BM blocks light leakage due to abnormal behavior of liquid crystal molecules that may occur at the edges of the image display layer, which will be described later, and color mixture that may appear at the edges of the color filter CF. The black matrix BM may be provided on at least one side of the color filter CF and may be provided around the color filter CF corresponding to the periphery of each pixel, for example. Here, although not shown in the embodiment of the present invention, the color filter CF and the black matrix BM may overlap each other in an area adjacent to the boundary of the pixel.

A first contact hole CH1 for exposing a part of the drain electrode DE of the thin film transistor TFT is formed in the color filter portion. A first electrode EL1, which will be described later, is connected to the thin film transistor TFT through the first contact hole CH1.

Although not shown, a protective film for protecting the channel portion of the thin film transistor (TFT) may be provided between the color filter portion and the thin film transistor (TFT). The protective film covers the upper portion of the exposed semiconductor layer SM.

The pixel PX is provided on the substrate BS, in detail, on the color filter portion. The pixel PX includes a cover layer CVL defining a tunnel-shaped cavity TSC on the substrate BS, an image display layer DSP provided in the tunnel-shaped cavity TSC, And a first electrode EL1 and a second electrode EL2 for controlling the image display layer DSP.

The first electrode EL1 is provided on the color filter portion. The first electrode EL1 is connected to the thin film transistor TFT through a first contact hole CH1 of the color filter portion. A second insulating layer INS2 for protecting the first electrode EL1 is provided on the first electrode EL1. The second insulating film INS2 may be omitted. The second insulating layer INS2 may be formed of an inorganic insulating material or an organic insulating material.

In the present embodiment, the first contact hole CH1 is formed by opening the region where the black matrix BM is formed, but the present invention is not limited thereto. In one embodiment, the first contact hole opens the color filter CF so that the first electrode EL can be connected to the thin film transistor TFT.

The cover layer CVL extends on the first electrode EL1 substantially in the first direction D1 on the second insulating layer INS2. The cover layer (CVL) is partly separated from the upper surface of the color filter portion to define a tunnel-like cavity (TSC) together with the color filter portion. For example, the cover layer CVL is spaced upward from the second insulating layer INS2 in the display area DA to form a predetermined space, and in the non-display area NDA, D2), the predetermined space is not formed. As a result, the tunnel-shaped cavity TSC has a shape extending in the second direction D2, and is provided at both ends of the tunnel-shaped cavity TSC, that is, in the second direction of the tunnel- The end portion of the second direction D2 and the end portion opposite to the second direction D2 are opened because the cover layer CVL is not formed. However, the formation direction of the cover layer CVL is not limited to this, and the cover layer CVL may extend in a direction different from the above direction.

The second electrode EL2 is provided along the lower surface of the cover layer CVL and extends along the extending direction of the cover layer CVL. The second electrode EL2 is formed to extend in the extending direction of the cover layer CVL, for example, in the first direction D1, and is shared by adjacent pixels PX in the extending direction . Thereby being spaced upward from the second insulating layer INS2 in the display area DA. The second electrode EL2 directly contacts the second insulating layer INS2 in the non-display area NDA.

The second electrode EL2 is connected to the common voltage line CML in the non-display area NDA. Although not shown, the first insulating layer INS1, the black matrix BM, and the second insulating layer INS2 are sequentially stacked on the common voltage line CML, and the first insulating layer INS1, The black matrix BM and the second insulating film INS2 are provided with openings (not shown) for exposing a part of the common voltage line CML. The openings may be provided in the form of an exposure hole that exposes a part of the common voltage line CML to only some of the regions provided with the common voltage line CML, for example, a few points But it is not limited thereto and may be a slit-shaped opening that exposes the upper surface of the common voltage line CML along the common voltage line CML. The second electrode EL2 is directly connected to the common voltage line CML through the opening, and receives a common voltage from the common voltage line CML.

Each of the first electrode EL1 and the second electrode EL2 may be made of a transparent conductive material or may be made of an opaque conductive material, for example, a metal. That is, each of the first electrode EL1 and the second electrode EL2 may be formed to be transparent or opaque depending on the operation mode of the display device according to an embodiment of the present invention. For example, when the display device according to an embodiment of the present invention operates as a transmissive display device in which a backlight unit is disposed under the substrate BS, the first electrode EL1 and the second electrode EL2 The first electrode EL1 of the first electrode EL1 and the first electrode EL1 of the second electrode EL2 may be made of a transparent material such as a translucent material, (In particular, a reflective material). The transparent conductive material includes a transparent conductive oxide such as ITO (indium tin oxide), IZO (indium zinc oxide), ITZO (indium tin zinc oxide), or the like. The opaque conductive material includes metals such as nickel, chromium, molybdenum, aluminum, titanium, copper, tungsten, and alloys thereof. Other components including the cover layer CVL may also be made of a transparent or opaque material depending on the operating mode of the display device.

The image display layer DSP is provided in the tunnel-shaped cavity TSC. According to an embodiment of the present invention, the image display layer DSP is provided between the first electrode EL1 and the second electrode EL2 facing each other, and the image display layer DSP is provided between the first electrode EL1 and the second electrode EL2, To display an image. The image display layer (DSP) is capable of displaying an image according to an electric field, and is not particularly limited as long as it has a liquid phase. For example, the image display layer DSP may be an electrophoretic layer or a liquid crystal layer.

When the image display layer (DSP) is an electrophoretic layer, the electrophoretic layer includes an insulating medium and charged particles. The insulating medium corresponds to a dispersion medium in a system in which the charged particles are dispersed. The charged particles are dispersed in the insulating medium as particles exhibiting electrophoresis. The charged particles are moved by an electric field to transmit or block light passing through the electrophoretic layer to display an image.

 When the image display layer DSP is a liquid crystal layer, the liquid crystal layer includes liquid crystal molecules having optical anisotropy. The liquid crystal molecules are driven by an electric field to transmit or block light passing through the liquid crystal layer to display an image.

When the image display layer DSP is a liquid crystal layer, although not shown, an orientation film (not shown) is formed on the upper surface of the second insulating film INS2 inside the tunnel-shaped cavity TSC and the lower surface of the second electrode EL2 . The alignment layer is for pre-tilting the liquid crystal layer. However, the alignment layer may be omitted depending on the type of the liquid crystal layer or the structure of the first electrode EL1 and the second electrode EL2. For example, if the first electrode EL1 and the second electrode EL2 have directors such as a slit or a protrusion, the alignment layer may be omitted.

An inorganic insulating layer may be further provided between the image display layer DSP and the second electrode EL2 and / or between the second electrode EL2 and the cover layer CVL. The inorganic insulating layer may include a material such as silicon nitride or silicon oxide. The inorganic insulating film supports the cover layer (CVL) so as to stably maintain the tunnel-shaped cavity (TSC).

An encapsulating layer SL is provided on the cover layer CVL. The sealing layer SL covers the pixel region PA. The sealing layer SL covers the display area DA and the non-display area NDA except for the pad area PDA in more detail. The sealing layer SL blocks the openings at both ends of the tunnel-shaped cavity TSC to seal the tunnel-shaped cavity TSC. That is, the space is sealed by the second insulating layer INS2 (the first electrode EL1 when the second insulating layer INS2 is omitted), the second electrode EL2, and the sealing layer SL do.

Meanwhile, a gate pad portion GPP and a data pad portion DPP of the wiring portion are provided in the pad region PDA.

The gate pad portion GPP includes a gate pad GP and a gate pad electrode GPE connected to the gate pad GP. The gate pad GP is connected to the gate line GL and is provided on the substrate BS. The color filter portion, specifically, the black matrix BM is not provided on the gate pad portion GPP. The gate pad electrode GPE is connected to the gate pad GP through a second contact hole CH2 formed with the first insulating film INS1.

The data pad unit DPP includes a data pad DP and a data pad electrode DPE connected to the data pad DP. The data pad DP is connected to the data line DL and is provided on the first insulating layer INS1. The color filter unit, specifically, the black matrix BM is not provided on the data pad unit DPP. The data pad electrode DPE is provided on the data pad DP and is in direct contact with the data pad DP. Here, in another embodiment of the present invention, the data pad electrode DPE may not be provided. Further, in another embodiment of the present invention, an additional insulating film may be provided on the data pad DP. In this case, the data pad electrode DPE may be formed on the additional insulating film, May be connected to a pad (DP).

According to an embodiment of the present invention, the gate pad unit GPP and the data pad unit DPP may be electrically connected to external wiring. However, the present invention is not limited thereto. In another embodiment of the present invention, a gate driver composed of a plurality of amorphous silicon transistors may be provided in place of the gate pad portion (GPP). The amorphous silicon transistors may be formed directly on the pad region (PDA) of the substrate (BS) through the thin film transistor (TFT) manufacturing process.

Although not shown, a polarizer (not shown) may be provided on the back surface of the substrate BS and the sealing layer SL, respectively, when the image display layer DSP is a liquid crystal layer. When the polarizing plate provided on the back surface of the substrate BS is referred to as a first polarizing plate and the polarizing plate provided on the sealing layer SL is referred to as a second polarizing plate, the light transmitted through the first polarizing plate and the second polarizing plate is perpendicular Polarized.

A gate signal is provided through the gate line GL and a data signal is supplied to the source electrode SE through the data line DL, A conductive channel (CHN) is formed on the semiconductor substrate (SM). Accordingly, the thin film transistor (TFT) is turned on to provide the image signal to the first electrode EL1, and between the first electrode EL1 and the second electrode EL2 to which a common voltage is applied, An electric field is formed. The liquid crystal is driven according to the electric field, and as a result, an image is displayed according to the amount of light passing through the liquid crystal layer LC.

3 is a flowchart sequentially illustrating a method of manufacturing a display device according to an embodiment of the present invention.

Referring to FIG. 3, in order to manufacture a display device according to an embodiment of the present invention, a thin film transistor (TFT) and a color filter portion are formed on a substrate (BS) (S110, S120). Next, a first electrode EL1, a sacrificial layer SCR_N, a second electrode EL2, and a cover layer CVL are successively formed (S130, S140, S150, and S160) on the color filter portion, The sacrificial layer SCR_N is removed (S170). Next, a video display layer (DSP) is formed (S180), and then an encapsulating film SL for encapsulating the video display layer (DSP) is formed (S190).

Hereinafter, a method of manufacturing a display device according to an embodiment of the present invention will be described in detail with reference to plan views and sectional views.

4A to 8A are plan views showing a part of a method of manufacturing a display device according to an embodiment of the present invention. FIGS. 4B to 9B are cross-sectional views taken along lines I-I ', IV-IV' and V-V 'in FIGS. 4A to 8A. FIGS. 9A to 15A and FIGS. 9B to 15B illustrate the remaining part of the method of manufacturing the display device according to the embodiment of the present invention. FIGS. 9A to 15A correspond to the line II-II ' And Figs. 9B to 15B are sequential sectional views corresponding to line III-III 'in Fig. 8A.

4A and 4B, a gate wiring portion is formed on a substrate BS. The gate wiring portion includes a gate line GL, a gate electrode GE, a gate pad GP, and a common voltage line CML.

The gate wiring portion may be formed of a conductive material, for example, a metal. For example, the gate wiring portion may be formed as a single process by forming a metal layer on the entire surface of the substrate (BS) and patterning the metal layer by a photolithography process. The data wiring portion may be formed of a single layer made of a single metal or an alloy, but not limited thereto, and may be formed of multiple layers of two or more kinds of metals and / or alloys thereof.

5A and 5B, a first insulating layer INS1 is formed on the gate wiring portion, and a semiconductor layer SM is formed on the first insulating layer INS1. The semiconductor layer SM is provided on top of the gate electrode GE and overlaps with at least a part of the gate electrode GE when viewed in plan view. The semiconductor layer SM may be doped or undoped silicon, or an oxide semiconductor.

6A and 6B, a data wiring portion is formed on the semiconductor layer SM. The data wiring portion includes a data line DL, a source electrode SE, a drain electrode DE, and a data pad DP.

The data wiring portion may be formed of a conductive material, for example, a metal. For example, the data wiring portion may be formed as a single process by forming a metal layer on the entire surface of the substrate (BS) and patterning the metal layer by a photolithography process. The data wiring portion may be formed of a single layer made of a single metal or an alloy, but not limited thereto, and may be formed of multiple layers of two or more kinds of metals and / or alloys thereof.

The gate electrode GE, the source electrode SE, the drain electrode DE, and the semiconductor layer SM formed in the above process form a thin film transistor (TFT). (S110)

Referring to FIGS. 7A and 7B, a color filter unit is formed on the substrate BS having the data wiring part formed S120, a first contact hole CH1 exposing a part of the drain electrode DE, A second contact hole CH2 exposing a part of the gate pad GP is formed.

The color filter portion is formed by forming a color filter (CF) and a black matrix (BM), respectively. The color filter CF may be formed by forming a color layer showing red, green, blue, or other color on the substrate BS and patterning the color layer using photolithography. The method of forming the color filter CF is not limited to this, and it is needless to say that the color filter CF may be formed by an ink jet method instead of photolithography in another embodiment of the present invention. The black matrix BM may also be formed by forming a light shielding layer that absorbs light on the substrate BS and patterning the light shielding layer using a photo-resist pattern, or alternatively, by another method such as an inkjet method Or the like. The color layer of the color filter CF and the black matrix BM may be formed in various order, for example, after forming a red, green, and blue color layers, and then forming a black matrix BM Alternatively, a black matrix (BM) can be formed and red, green, and blue color layers can be formed. It goes without saying that the order of forming the color layers may also be varied as required.

The first contact hole CH1 may be formed by patterning the first insulating film INS1 and the color filter portion, specifically, a part of the drain electrode DE in a photolithography process. The second contact hole CH2 may be formed by patterning a part of the first insulating film INS2 on the gate pad GP by a photolithography process.

On the other hand, although not shown, an additional insulating film (for example, a passivation layer) may be selectively provided between the thin film transistor TFT and the color filter portion. The additional insulating film protects the channel portion of the thin film transistor (TFT) and at the same time prevents impurities from the color filter portion from diffusing into the thin film transistor (TFT). Referring to Figures 8A and 8B, A first electrode EL1, a gate pad electrode GPE, and a data pad electrode DPE are formed on the filter portion S130.

The first electrode EL1, the gate pad electrode GPE, and the data pad electrode DPE are formed by forming a conductive layer of a conductive material on the color filter portion and then forming the conductive layer using a photolithography process. And then patterned. The first electrode EL1 is connected to the drain electrode DE through the first contact hole CH1. The gate pad electrode GPE is connected to the gate pad GP through the second contact hole CH2. The data pad electrode DPE is provided on the data pad DP and is in direct contact with the data pad DP.

A second insulating layer INS2 may be provided on the first electrode EL1 to protect the first electrode EL1. The second insulating layer INS2 may be formed on the gate pad electrode GPE and the data pad Is not provided on the electrode (DPE). The top surface of the gate pad electrode GPE and the data pad electrode DPE may be exposed and then connected to an external wiring through an anisotropic conductive film or the like.

9A and 9B, a sacrificial layer SCR_N is formed on the second insulating layer INS2. (S140)

The sacrificial layer SCR_N is formed to cover the display area DA and extends in the second direction D2. That is, when the pixels are arranged in the row direction in the first direction (D1) and in the column direction (D2) in the column direction, the sacrifice layer (SCR_N) . However, the extending direction of the sacrificial layer (SCR_N) is not limited to this, and may optionally be formed to extend in the first direction (D1). The sacrificial layer (SCR_N) may be formed of an organic polymer material, in particular, a negative type photoresist. When the sacrificial layer (SCR_N) is formed of the negative type photosensitive polymer material, the sacrificial layer (SCR_N) may be formed by patterning using a photolithography process.

The sacrificial layer SCR_N is then removed to form the tunnel-shaped cavity TSC. The sacrificial layer SCR_N is then formed at a position where the image display layer DSP is to be formed, And a height.

10A and 10B, a conductive layer is formed on the sacrificial layer SCR_N, and a photoresist pattern PR_P is formed on the conductive layer.

The conductive layer may be formed of a transparent conductive material such as ITO or IZO, or may be formed using a method such as physical vapor deposition.

The photoresist pattern PR_P is formed at a position corresponding to a region where the second electrode EL2 is to be formed. The photoresist pattern PR_P may be formed by applying a photoresist on the conductive layer, exposing the photoresist primarily, and secondary exposing the exposed photoresist. Here, the photoresist is a positive type. Accordingly, the portion corresponding to the region where the second electrode EL2 is to be formed is not exposed, and the photoresist pattern PR_P remains after the development.

Here, the sacrificial layer (SCR_N) uses a negative type photoresist and the photoresist pattern (PR_P) uses a positive type photoresist to pattern the conductive layer while maintaining the sacrificial layer (SCR_N). When the conductive layer is formed on the sacrificial layer (SCR_N) using photolithography, a separate photoresist pattern (PR_P) for patterning the conductive layer is required. When the photoresist for forming the sacrificial layer (SCR_N) and the photoresist for the conductive layer pattern are formed of the same photoresist type, the photoresist for forming the sacrificial layer (SCR_N) The problem of removing the photoresist may occur. In one embodiment of the present invention, the photoresist for forming the sacrificial layer (SCR_N) is of a negative type and the photoresist for the conductive layer pattern is a positive type of the photoresist opposite to the photoresist for forming the sacrificial layer (SCR_N) , There is no damage to the sacrificial layer (SCR_N) even if exposure and development proceed after forming the sacrificial layer (SCR_N).

Referring to FIGS. 11A and 11B, a second electrode EL2 is formed on the sacrificial layer SCR_N. (S150) The second electrode EL2 may be formed by etching the conductive layer using the photoresist pattern PR_P as a mask.

12A and 12B, the photoresist pattern PR_P is removed by secondary development after secondary exposure. On the other hand, since the sacrificial layer (SCR_N) is formed using a negative type photoresist, the sacrificial layer (SCR_N) is further cured at the time of the secondary exposure and is not removed at the time of the secondary development. Accordingly, the second electrode EL2 can be formed by a single photolithography process using one mask without affecting other components.

13A and 13B, a cover layer CVL is formed on a substrate BS on which the second electrode EL2 is formed. (S160) The cover layer CVL extends in the first direction D1 and covers the second electrode EL2. The cover layer CVL may be formed to a thickness of about 0.1 mu m to 100 mu m. The cover layer (CVL) is then soft-cured to minimize the effect on the wet etchant upon removal of the sacrificial layer (SCR_N).

Here, the second electrode EL2 and the cover layer CVL overlap each other in a plane and may have substantially the same shape. However, the second electrode EL2 may be formed to have a larger area so as to completely cover the second electrode EL2 in consideration of a margin in design. For example, the cover layer CVL may be formed to have a wider area than the second electrode EL. In particular, the cover layer CVL may overlap the black matrix corresponding to the region where the thin film transistor TFT is formed, It can be formed about 10% wider than the original area. The cover layer CVL is not formed at both ends of the display area DA in the second direction D2. Thus, the upper surface of the sacrificial layer (SCR_N) of the region corresponding to the end portion of the display region (DA) in the second direction (D2) is exposed.

14A and 14B, the sacrificial layer SCR_N is removed through a wet etching process to form a tunnel-like cavity TSC. (S170) The sacrificial layer SCR_N is etched by wet etching, From the exposed upper surface of the sacrificial layer (SCR_N) to the inside of the sacrificial layer (SCR_N). The upper surface of the second insulating layer INS2 corresponding to the display area DA and the lower surface of the second electrode EL2 are exposed and the upper surface of the second insulating layer INS2, And a tunnel-shaped cavity TSC defined by both ends of the display area DA in the second direction D2 are formed. The wet etching process is for removing the sacrificial layer (SCR_N), and various etchants may be used depending on the material of the sacrificial layer (SCR_N). When the sacrificial layer (SCR_N) is formed of a negative photoresist, a solution used for a strip of negative photoresist may be used.

An inorganic insulating layer may be formed on the sacrificial layer SCR_N before forming the second electrode EL2 and may be formed on the second electrode EL2 before forming the cover layer CVL. A further inorganic insulating film can be formed. The inorganic insulating layer supports the cover layer (CVL) to stably maintain the tunnel-shaped cavity (TSC) when the sacrificial layer (SCR_N) is etched.

15A and 15B, an image display layer (DSP), for example, a liquid crystal layer is formed in the tunnel-like cavity TSC. (S180). Since the liquid crystal is provided as a fluid, it is provided in the vicinity of the tunnel-shaped cavity (TSC) and moves into the tunnel-shaped cavity (TSC) by capillary phenomenon. The liquid crystal layer may be provided near the tunnel-shaped cavity TSC using an ink jet using a micropipette. In addition, the liquid crystal layer may be provided in the tunnel-shaped cavity TSC by using a vacuum liquid crystal injection device. When the vacuum liquid crystal injection device is used, a part of the substrate (BS) on which the tunnel-shaped cavity (TSC) is formed is immersed in a container having a liquid crystal material in the chamber, and when the pressure of the chamber is lowered, (TSC).

On the other hand, an alignment film may be formed in the tunnel-shaped cavity TSC according to the display mode of the display device according to an embodiment of the present invention. The alignment layer may be formed using an alignment liquid prior to forming the image display layer (DSP). The alignment liquid is obtained by mixing an alignment material such as polyimide with an appropriate solvent. The liquid alignment material is provided as a fluid so that it is provided in the vicinity of the tunnel-shaped cavity (TSC) and moves into the tunnel-shaped cavity (TSC) by capillary phenomenon. The alignment liquid may be provided near the tunnel-shaped cavity (TSC) using an ink jet using a micropipette, or may be provided in the tunnel-shaped cavity (TSC) using a vacuum injection device. The solvent is then removed. The substrate (BS) can be placed at room temperature or heated to remove the solvent.

Here, the alignment layer may be omitted depending on the type of the liquid crystal layer and the shape of the first electrode EL1 and the second electrode EL2. For example, when the first electrode EL1 and the second electrode EL2 are patterned in a specific shape and a separate orientation is not required, the alignment layer is omitted. In addition, when the image display layer (DSP) includes a reactive mesogen and the reactive mesogen is polymerized to form an alignment layer, a separate alignment layer forming process may be omitted.

Next, the liquid crystal other than the tunnel-shaped cavity TSC is removed and an encapsulation layer SL surrounding the tunnel-shaped cavity TSC is formed. (S190) The encapsulation layer SL is formed in the tunnel- TSC, that is, the inlet portion where the liquid crystal is injected.

The sealing layer SL may be formed of a semi-hardened polymeric material. The polymeric material has a certain degree of fluidity before it is fully cured. In order to form the sealing layer SL, the polymer material is first formed into a plate having a predetermined thickness and covering the substrate BS. The polymeric material on the plate is placed on the substrate (BS) and pressure is applied from top to bottom. The polymeric material is provided by fluidity to the concave portion on the substrate (BS). That is, the upper surface of the cover film, the side surface of the image display layer DSP, and the upper surface of the second insulating film INS2 are brought into contact with the image display layer DSP in the tunnel-shaped cavity TSC. The semi-cured polymeric material is then hardbaked and hardened.

Although not shown, after the sealing layer SL is formed, a first polarizing plate and a second polarizing plate may be provided on the lower surface of the substrate BS and the upper surface of the sealing layer SL, respectively. The polarizing plate is for polarizing light transmitted through the liquid crystal layer. The transmission axes of the first polarizing plate and the second polarizing plate may be orthogonal to each other. The first polarizing plate is attached to the back surface, that is, the lower surface of the substrate (BS), using an adhesive or the like.

16 is a plan view showing a display device according to another embodiment of the present invention. The display device according to another embodiment of the present invention is a case in which the image display layer DSP is a liquid crystal layer and the electrode portion including the first electrode EL1 and the second electrode EL2 .

17A is a cross-sectional view taken along the line VI-VI 'and IX-IX' in FIG. 16, FIG. 17B is a cross-sectional view taken along the line VII-VII ' to be. 16 and 17A to 17C show only one pixel PX for convenience of explanation, the display device according to the embodiments of the present invention may have a plurality of pixels PX, and the pixels PX ) Are arranged in a matrix form having a plurality of rows and a plurality of rows. Since the pixels PX have the same structure, only one pixel PX will be described as an example for convenience of explanation. Here, the pixel PX has a rectangular shape elongated in one direction, but is not limited thereto. The shape of the pixel PX in the plane may be variously modified such as a V shape, a Z shape, and the like.

Other embodiments of the present invention will be described in order to avoid redundant description and focus on differences from the embodiment of the present invention. The portions not specifically described in the other embodiments of the present invention are in accordance with an embodiment of the present invention. Like numbers refer to like elements and similar numbers represent like elements.

Referring to Figs. 1A, 16 and 17A to 17C, a display device according to another embodiment of the present invention includes a substrate BS, a color filter portion provided on the substrate BS, and a pixel PX .

The substrate (BS) may be a transparent or opaque insulating substrate (BS), such as a silicon substrate (BS), a glass substrate (BS), a plastic substrate (BS) The substrate BS comprises a pixel region PA provided with a plurality of pixels PX and a pad region PDA provided at least one side of the pixel region PA. The pixel area PA includes a display area DA corresponding to each pixel on a one-to-one basis and a non-display area NDA provided on at least one side of the display area DA and not displaying an image.

A wiring portion for transmitting a signal to the pixel and a thin film transistor (TFT) for driving the pixel are provided between the substrate (BS) and the pixel. The wiring portion and the thin film transistor (TFT) are provided in the non-display region NDA. The wiring portion includes a gate line GL and a data line DL provided in a non-display region NDA of the pixel region PA. The thin film transistor TFT is connected to the gate line GL and the data line DL and includes a gate electrode GE, a semiconductor layer SM, a source electrode SE and a drain electrode DE .

The color filter portion is provided on the thin film transistor (TFT). The color filter section includes a color filter (CF) and a black matrix (BM).

The pixel PX is provided on the substrate BS, in detail, on the color filter portion. The pixel PX includes a cover layer CVL defining a tunnel-like cavity TSC on the substrate BS, an image display layer DSP provided in the tunnel-like cavity TSC, And a first electrode EL1 and a second electrode EL2 for controlling the digital signal processor DSP.

The first electrode EL1 is provided on the color filter portion. The first electrode EL1 is provided in an area corresponding to the display area DA. The first electrode EL1 is connected to the thin film transistor TFT through a first contact hole CH1 of the color filter portion. The first electrode EL1 may be provided as a through-hole.

A second insulating layer INS2 for protecting the first electrode EL1 is provided on the first electrode EL1.

The second electrode EL2 is provided on the second insulating layer INS2. The second electrode EL2 overlaps with the first electrode EL1 when viewed in a plan view. The second electrode EL2 has a plurality of slits SLT formed by removing a part of the second electrode EL2. The slits SLT may be provided so as to have an inclined direction in the first direction D1 or the second direction D2. In addition, the second electrode EL2 may have a plurality of regions made of slits SLT having different inclination directions, wherein the regions are substantially symmetrical with respect to an imaginary line crossing the pixel Or may be substantially point symmetric about any point in the pixel. In FIG. 16, the slits SLT are formed to be substantially line-symmetrical with respect to an imaginary line crossing the pixel PX in the first direction D1. In other words, the second electrode EL2 has a stripe portion EL2a and a plurality of branch portions EL2b which are divided by the slits SLT and protruded from the stripe portion EL2a. The fringes EL2b are spaced apart from each other by a certain distance. The branch portions EL2b of the second electrode EL2 together with the first electrode EL1 form a fringe electric field. The fringes EL2b may be formed to extend in parallel in a predetermined direction. The stem base EL2a and the branch EL2b may be provided in various shapes. For example, the fringes EL2b may be extended in an inclined manner in both the extending direction and the vertical direction of the stripe base EL2a. Or the stem base EL2a may be formed in a bent shape a plurality of times. The second electrode EL2 protrudes in a direction adjacent to the second electrode EL2 and is connected to the second electrode EL2 of the adjacent pixel.

Alternatively, although not shown, the first electrode may have a stem base and a plurality of first stem portions protruding from the stem base, and the second electrode may also have a stem base and protruding and extending from the stem base And may have a plurality of second branches. The first branch portions are spaced apart from each other by a predetermined distance, and the second branch portions are spaced apart from each other by a predetermined distance. The first branch portions and the second branch portions are alternately arranged when viewed in plan view, whereby the first branch portions and the second branch portions can form a horizontal electric field.

The cover layer CVL extends in the first direction D1 on the second electrode EL2. A part of the cover layer CVL in an area corresponding to the display area DA is spaced apart from the upper surface of the second electrode EL2 and the upper surface of the second insulating film INS2, EL2 and the second insulating film INS2 define a tunnel-like cavity TSC. That is, the cover layer CVL is spaced upward from the second electrode EL2 and the second insulating layer INS2 in the display area DA to form a predetermined space. The non-display area NDA, The predetermined space is not formed by directly contacting other layers along the second direction D2. As a result, the tunnel-shaped cavity TSC has a shape extending in the second direction D2, and is provided at both ends of the tunnel-shaped cavity TSC, that is, in the second direction of the tunnel- The end portion of the second direction D2 and the end portion opposite to the second direction D2 are opened because the cover layer CVL is not formed. However, the formation direction of the cover layer CVL is not limited to this, and the cover layer CVL may extend in a direction different from the above direction.

The image display layer DSP is provided in the tunnel-shaped cavity TSC. According to an embodiment of the present invention, the image display layer DSP is provided between the first electrode EL1 and the second electrode EL2 and the cover layer CVL. The image display layer DSP is controlled by the fringing electric fields of the first electrode EL1 and the second electrode EL2 to display an image. The image display layer (DSP) is capable of displaying an image according to an electric field, and is not particularly limited as long as it has a liquid phase.

An inorganic insulating layer may be further provided between the image display layer DSP and the cover layer CVL. The inorganic insulating layer may include a material such as silicon oxide or silicon nitride. The inorganic insulating film supports the cover layer (CVL) so as to stably maintain the tunnel-shaped cavity (TSC).

An encapsulating layer SL is provided on the cover layer CVL. The sealing layer SL covers the entire surface of the substrate BS. The sealing layer SL blocks the openings at both ends of the tunnel-shaped cavity TSC to seal the tunnel-shaped cavity TSC. That is, the tunnel-shaped cavity TSC is sealed by the second insulating layer INS2, the second electrode EL2, the cover layer CVL, and the sealing layer SL.

The wiring part further includes a gate pad part (GPP) and a data pad part (DPP) provided in the pad area (PDA).

18 is a flowchart sequentially illustrating a method of manufacturing a display device according to an embodiment of the present invention. Figs. 19A to 22A and Figs. 19B to 22B are cross-sectional views showing a part of a manufacturing method of a display device according to another embodiment of the present invention, wherein Figs. 19A to 22A are cross- And Figs. 19B to 22B are cross-sectional views corresponding to line VIII-VIII 'in Fig.

Hereinafter, a method of manufacturing a display device according to another embodiment of the present invention will be described in detail with reference to plan views and sectional views. Other embodiments of the present invention will be described in order to avoid redundant description and focus on differences from the embodiment of the present invention. The portions not specifically described in the other embodiments of the present invention are in accordance with an embodiment of the present invention. Like numbers refer to like elements and similar numbers represent like elements.

Referring to FIG. 18, in order to manufacture a display device according to another embodiment of the present invention, a thin film transistor (TFT) and a color filter portion are formed on a substrate (BS) (S210, S220). Next, a first electrode EL1, a second electrode EL2, a sacrificial layer SCR_P, and a cover layer CVL are sequentially formed (S220, S230, S240, S250, and S260) on the color filter portion Thereafter, the sacrificial layer SCR_P is removed (S270). Next, a video display layer (DSP) is formed (S280), and an encapsulating film for encapsulating the video display layer (DSP) is formed (S290).

First, a thin film transistor TFT is formed on a substrate BS (S210), and a color filter portion is formed on the thin film transistor TFT (S220). Next, a first electrode EL1 Is formed. (S230) The thin film transistor TFT, the color filter portion, and the method of forming the first electrode EL1 are the same as the thin film transistor TFT, the color filter portion, and the first electrode EL1 in the embodiment of the present invention. Is substantially the same as the method of forming the first electrode EL1, and thus description thereof will be omitted.

19A and 19B, a second electrode EL2 is formed on a substrate BS on which a second insulating layer INS2 is formed S240, a sacrificial layer SCR_P is formed on the second electrode EL2, (S250)

The sacrificial layer SCR_P is formed to cover the display area DA and extends in the second direction D2. The sacrificial layer (SCR_P) may be formed of an organic polymer material. The sacrificial layer (SCR_P) may be formed by patterning using a photolithography process. In this case, the sacrificial layer (SCR_P) is formed of a positive type photoresist. All. The sacrificial layer SCR_P is then removed to form the tunnel-shaped cavity TSC. The sacrificial layer SCR_P is then formed at a position where the image display layer DSP is to be formed, And a height.

20A and 20B, a cover layer CVL is formed on the sacrificial layer SCR_P. (S260) The cover layer CVL is formed on the sacrificial layer SCR_P, As shown in FIG. For example, when the sacrificial layer (SCR_P) is formed of a positive type photoresist as in an embodiment of the present invention, the cover layer (CVL) may be formed of a negative type photoresist.

Here, the sacrificial layer does not affect the cover layer (CVL) upon removal of the sacrificial layer (SCR_P) when a positive type photoresist is used and the cover layer uses a negative type photoresist. That is, since the sacrificial layer SCR_P is the positive type photoresist, the sacrificial layer SCR_P and the cover layer CVL are exposed to the strip solution for removing the positive type photoresist, SCR_P) is removed and the cover layer (CVL) is not removed.

The cover layer CVL extends in the first direction D1 and covers a part of the sacrificial layer SCR_P. The cover layer CVL may be formed to a thickness of about 0.1 mu m to 100 mu m. The cover layer CVL is not formed at both ends of the display area DA in the second direction D2 and accordingly the area of the display area DA corresponding to the end of the display area DA in the second direction D2 That is, the top surface of the sacrificial layer SCR_P formed in the region corresponding to the non-display region NDA of the sacrificial layer SCR_P is exposed.

Referring to FIGS. 21A and 21B, the sacrificial layer SCR_P is removed through a wet etching process to form a tunnel-like cavity TSC. (S270) The sacrificial layer SCR_P is formed by wet etching, From the exposed upper surface of the sacrificial layer (SCR_P) to the inside of the sacrificial layer (SCR_P). The upper surface of the second insulating layer INS2 corresponding to the display area DA and the lower surface of the second electrode EL2 are exposed and the upper surface of the second insulating layer INS2, And a tunnel-shaped cavity TSC defined by both ends of the display area DA in the second direction D2 are formed. The wet etching process is for removing the sacrificial layer (SCR_P), and a suitable etchant may be used depending on the material of the sacrificial layer (SCR_P). When the sacrificial layer (SCR_P) is formed of a positive photoresist as in an embodiment of the present invention, a solution used for a strip of a positive photoresist can be used.

22A and 22B, an image display layer (DSP), for example, a liquid crystal layer is formed in the tunnel-like cavity TSC (S280). Since the liquid crystal is provided as a fluid, (TSC) by capillary action. ≪ tb > < TABLE > The liquid crystal layer may be provided near the tunnel-shaped cavity TSC using an ink jet using a micropipette. In addition, the liquid crystal layer may be provided in the tunnel-shaped cavity TSC by using a vacuum liquid crystal injection device. When the vacuum liquid crystal injection device is used, a part of the substrate (BS) on which the tunnel-shaped cavity (TSC) is formed is immersed in a container having a liquid crystal material in the chamber, and when the pressure of the chamber is lowered, (TSC).

Next, liquid crystal other than the tunnel-shaped cavity TSC is removed and an encapsulation layer SL surrounding the tunnel-shaped cavity TSC is formed. (S290) The encapsulation layer SL is formed in the tunnel- TSC, that is, the inlet portion where the liquid crystal is injected.

The sealing layer SL may be formed of a semi-hardened polymeric material. The polymeric material has a certain degree of fluidity before it is fully cured. In order to form the sealing layer SL, the polymer material is first formed into a plate having a predetermined thickness and covering the substrate BS. The polymeric material on the plate is placed on the substrate (BS) and pressure is applied from top to bottom. The polymeric material is provided by fluidity to the concave portion on the substrate (BS). That is, the upper surface of the cover layer, the side surface of the image display layer DSP, and the upper surface of the second insulating layer INS2 contact the image display layer DSP in the tunnel-shaped cavity TSC. The semi-cured polymeric material is then hard-baked and hardened. In the display device according to the embodiments of the present invention, the amount of the substrate and liquid crystal used is significantly reduced compared to a general display device. In a typical display device, two substrates facing each other are used to arrange a liquid crystal layer therebetween. However, since the display device according to the first embodiment of the present invention uses only one substrate, the amount of the substrate used is reduced. Further, since the liquid crystal is formed only in a part of the substrate, the amount of liquid crystal used is reduced.

The manufacturing method of the display device according to the above embodiments omits the process of attaching two substrates to each other in comparison with a general display device having two substrates facing each other,

In addition, since the sacrificial layer can be easily removed using a negative type photoresist etching solution or a positive type photoresist used in a photolithography process, a display device can be manufactured using an existing process without any additional process .

In addition, the wet etching has a higher etching uniformity than the plasma etching, so that it is easy to enlarge the display device. Particularly, in the conventional structure in which the color filter and the black matrix are disposed on the sacrificial layer, a protective film forming process for protecting the color filter and the black matrix is necessarily required in order to remove the sacrificial layer by plasma etching. Since the protective film forming process is performed after forming the gate pad portion (GPP) and the data pad portion (DPP), the cost and the process time are increased by forming the photolithography process using a mask. However, since the color filter and the black matrix are formed before the formation of the sacrificial layer, the gate pad portion (GPP), and the data pad portion (DPP) according to an embodiment of the present invention, Of course, the process itself is simplified.

In addition, the steps of forming the tunnel-like cavity, forming the image display layer in the tunnel-shaped cavity, and sealing the tunnel-shaped cavity may be performed at a relatively low temperature compared to the conventional method. Further, in a general display device, a spacer for adjusting the distance between the two substrates is required to be formed before the two substrates are bonded together. In the present invention, it is not necessary to form the spacer. Therefore, the step of forming the spacer can be omitted.

FIGS. 23A, 23B and 23C are cross-sectional views illustrating a display device according to another embodiment of the present invention. In still another embodiment of the present invention, lines I-I 'and IV-IV' II-II ', and III-III' and V-V ', respectively. In a display device according to another embodiment of the present invention, a black matrix is provided on an upper portion of a pixel. The display device according to another embodiment of the present invention is different from the embodiment of the present invention in order to avoid redundant description. The parts not specifically described in another embodiment of the present invention are in accordance with an embodiment of the present invention.

Referring to Figs. 1A, 23A, 23B and 23C, a display device according to another embodiment of the present invention includes a substrate BS, a color filter CF provided on the substrate BS, A pixel PX provided on the pixel CF, and a black matrix BM provided on the pixel PX.

The substrate BS comprises a pixel region PA provided with a plurality of pixels PX and a pad region PDA provided at least one side of the pixel region PA. The pixel area PA includes a display area DA corresponding to each pixel PX on a one-to-one basis and a non-display area NDA provided on at least one side of the display area DA and not displaying an image .

A wiring portion for transmitting a signal to the pixel PX and a thin film transistor (TFT) for driving the pixel PX are provided on the substrate BS.

The color filter (CF) is provided on the thin film transistor (TFT). The color filter CF is for providing color to the light passing through each pixel. The color filter CF may be any one of a red color filter, a green color filter, and a blue color filter, and may be provided corresponding to each pixel area PA. The color filter may correspond to each pixel on a one-to-one basis. The color filter CF may be partially overlapped by the adjacent color filter CF at the boundary of adjacent pixels.

A first contact hole CH1 for exposing a part of the drain electrode DE of the thin film transistor TFT is formed in the color filter CF. A first electrode EL1, which will be described later, is connected to the thin film transistor TFT through the first contact hole CH1.

The pixel PX is provided on the substrate BS, in detail, on the color filter CF. The pixel PX includes a cover layer CVL defining a tunnel-shaped cavity TSC on the substrate BS, an image display layer DSP provided in the tunnel-shaped cavity TSC, And a first electrode EL1 and a second electrode EL2 for controlling the image display layer DSP.

The first electrode EL1 is provided on the color filter CF. The first electrode EL1 is connected to the thin film transistor TFT through a first contact hole CH1 of the color filter CF. A second insulating layer INS2 for protecting the first electrode EL1 is provided on the first electrode EL1.

The cover layer CVL extends on the first electrode EL1 substantially in the first direction D1 on the second insulating layer INS2. The cover layer CVL is partly separated from the upper surface of the color filter CF to define a tunnel-like cavity TSC together with the color filter CF.

The second electrode EL2 is provided along the lower surface of the cover layer CVL and extends along the extending direction of the cover layer CVL. The second electrode EL2 is formed to extend in the extending direction of the cover layer CVL, for example, in the first direction D1, and is shared by adjacent pixels in the extending direction.

The image display layer DSP is provided in the tunnel-shaped cavity TSC. According to an embodiment of the present invention, the image display layer DSP is provided between the first electrode EL1 and the second electrode EL2 facing each other, and the image display layer DSP is provided between the first electrode EL1 and the second electrode EL2, To display an image.

A first encapsulation layer SL1 is provided on the cover layer CVL. The first encapsulation layer SL1 covers the pixel area PA. The first encapsulation layer SL1 covers the display area DA and the non-display area NDA except for the pad area PDA. The first seal layer SL1 seals the tunnel-shaped cavity TSC by blocking the openings at both ends of the tunnel-shaped cavity TSC. That is, the tunnel-shaped cavity TSC is formed by the second insulating film INS2 (the first electrode EL1 when the second insulating film INS2 is omitted), the second electrode EL2, And is sealed by the layer SL1.

A black matrix BM is provided in the non-display area NDA on the first encapsulation layer SL1. In particular, the black matrix BM is provided corresponding to the overlapping areas of the color filters CF adjacent to each other, and blocks unwanted light in realizing an image. The black matrix BM blocks the light leakage due to the abnormal behavior of the liquid crystal molecules that may occur at the edge of the image display layer DSP and the color mixture that may appear at the edge of the color filter CF.

A second encapsulation layer SL2 is provided on the substrate BS on which the first encapsulation layer SL1 and the black matrix BM are formed to protect the components under the second encapsulation layer SL2.

A display device according to another embodiment of the present invention can be manufactured by a method similar to the display device of the embodiment of the present invention. Hereinafter, a method of manufacturing a display device according to another embodiment of the present invention will be described in detail with reference to cross-sectional views. A method of manufacturing a display device according to another embodiment of the present invention will be described focusing on differences from the method of manufacturing a display device according to an embodiment of the present invention to avoid duplicated description. In another embodiment of the present invention, portions not specifically shown or described are according to an embodiment of the present invention.

24 is a flowchart sequentially illustrating a method of manufacturing a display device according to another embodiment of the present invention.

Referring to FIG. 24, in order to manufacture a display device according to another embodiment of the present invention, a thin film transistor (TFT) and a color filter CF are formed on a substrate BS (S310, S320). Next, the first electrode EL1, the sacrificial layer SCR_N, the second electrode EL2, and the cover layer CVL are sequentially formed (S330, S340, S350, and S360) on the color filter CF Thereafter, the sacrificial layer SCR_N is removed (S370). Next, a video display layer DSP is formed (S380), and a first encapsulation film SL1 for encapsulating the video display layer DSP is formed (S390). Thereafter, a black matrix BM is formed (S400), and a second sealing film SL2 is formed (S410).

25, 26, 27A to 35A, and 27B to 35B are cross-sectional views showing a part of a manufacturing method of a display device according to another embodiment of the present invention, each of which corresponds to FIG. 1B . 25 and 26 are sectional views taken along the line I-I ', IV-IV' and V-V ', respectively, of FIG. 1B. FIGS. 27A to 35A are sectional views taken along the line II- And Figs. 27B to 35B are sequential sectional views taken along line III-III 'of Fig. 1B, respectively.

25, a color filter CF is formed on a substrate BS on which a gate wiring portion, a semiconductor layer SM, a data wiring portion and the like are formed (S310) (S320), and the drain electrode DE, A first contact hole CH1 exposing a part of the gate pad GP and a second contact hole CH2 exposing a part of the gate pad GP are formed. The color filter CF may be formed by forming a color layer showing red, green, blue, or other color on the substrate BS and patterning the color layer using photolithography.

26, a first electrode EL1, a gate pad electrode GPE and a data pad electrode DPE are formed on the color filter CF. (S330) The first electrode EL1, The gate pad electrode GPE and the data pad electrode DPE may be formed by forming a conductive layer of a conductive material on the color filter and then patterning the conductive layer using a photolithography process. A second insulating layer INS2 may be provided on the first electrode EL1 to protect the first electrode EL1.

27A and 27B, a sacrifice layer SCR_N is formed on the second insulating layer INS2. (S340)

28A and 28B, a conductive layer is formed on the sacrificial layer SCR_N and a photoresist pattern PR_P is formed on the conductive layer.

29A and 29B, a second electrode EL2 is formed on the sacrificial layer SCR_N. (S350) The second electrode EL2 may be formed by etching the conductive layer using the photoresist pattern PR_P as a mask.

Referring to FIGS. 30A and 30B, the photoresist pattern PR_P is removed by secondary development after secondary exposure.

31A and 31B, a cover layer CVL is formed on a substrate BS on which the second electrode EL2 is formed. (S360) The cover layer CVL extends in the first direction D1 and covers the second electrode EL2.

Referring to FIGS. 32A and 32B, the sacrificial layer SCR_N is removed through a wet etching process to form a tunnel-shaped cavity TSC (S370)

33A and 33B, an image display layer (DSP), for example, a liquid crystal layer is formed in the tunnel-shaped cavity TSC. (S380) Next, the liquid crystal other than the tunnel-shaped cavity TSC is removed and the first encapsulation layer SL1 surrounding the tunnel-shaped cavity TSC is formed. (S390) The first encapsulation layer SL1 ) Blocks the opening of the tunnel-like cavity (TSC), that is, the inlet portion into which the liquid crystal has been injected.

33A and 33B, a black matrix BM is formed on the substrate BS on which the first encapsulation layer SL1 is formed. (S400) The black matrix BM is formed of the black matrix BM ) Alternatively, the light-shielding layer may be formed by forming a light-shielding layer that absorbs light on the substrate BS and patterning the light-shielding layer by using a photo-resist pattern. Alternatively, the light-shielding layer may be formed by another method such as an inkjet method .

33A and 33B, a second encapsulation layer SL2 is formed on the substrate BS having the first encapsulation layer SL1 and the black matrix BM formed thereon.

In the display device according to another embodiment of the present invention, a black matrix is formed on the color filter after formation of the color filter, thereby minimizing the thickness difference that may occur in the overlap region of the color filter and the black matrix. This makes it possible to prevent abnormal driving of the liquid crystal due to the non-uniformity of the thicknesses of the color filters, the black matrix, and the respective components in the overlapped portion between the color filter and the black matrix, and enlarge the display area. As a result, the display device according to another embodiment of the present invention provides a high-quality image by maximizing the display area in the display device, in addition to the advantages of the other embodiments described above.

While the present invention has been described in connection with what is presently considered to be the most practical and preferred embodiment, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, It will be understood that various modifications and changes may be made thereto without departing from the scope of the present invention.

For example, embodiments of the present invention include a step of removing the sacrificial layer using wet etching. In other embodiments of the present invention, the present invention is applied to display devices having a conventional structure. The wet etching according to the examples can be applied to remove the sacrificial layer. In this case, there is an advantage that a display device with high uniformity can be manufactured with low cost.

Therefore, the technical scope of the present invention should not be limited to the contents described in the detailed description of the specification, but should be defined by the claims.

BM: Black matrix CF: Color filter
CVL: Cover layer DA: Display area
DL: Data line DP: Data pad
DPE: Data pad electrode DSP: Image display layer
EL1: first electrode EL2: second electrode
GL: gate line GP: gate pad
GPE: gate pad electrode SL: sealing layer
TFT: Thin film transistor TSC: Tunnel top joint

Claims (12)

Board;
A plurality of pixels provided on the substrate;
A black matrix provided between the substrate and the pixel;
A thin film transistor provided between the substrate and the black matrix; And
And color filters corresponding to the pixels,
Each of the pixels
A cover layer providing a cavity on the substrate;
An image display layer provided in the cavity;
A first electrode disposed on the black matrix and connected to the thin film transistor; And
And a second electrode disposed on the image display layer and providing an electric field to the image display layer together with the first electrode,
Wherein the image display layer includes an upper surface, first side surfaces facing each other in a first direction, and second side surfaces facing each other in a second direction intersecting the first direction,
The first portion of the second electrode overlapping and flat on the image display layer and the second portion of the second electrode overlapping and inclined to the first sides of the image display layer are in contact with the same layer ,
Wherein the first portion of the second electrode and the second side of the image display layer are in contact with different layers. The method according to claim 1,
Each color filter including one of a red color filter, a green color filter, and a blue color filter. The method according to claim 1,
And two color filters adjacent to each other overlap each other at an edge of each of the pixels. Board;
A plurality of pixels provided on the substrate;
A black matrix provided between the substrate and the pixel;
A thin film transistor provided between the substrate and the black matrix; And
And color filters corresponding to the pixels,
Each of the pixels
A cover layer providing a cavity on the substrate;
An image display layer provided in the cavity;
A first electrode disposed on the black matrix and connected to the thin film transistor; And
And a second electrode that is insulated from the first electrode and is disposed between the image display layer and the black matrix and provides an electric field to the image display layer together with the first electrode,
Wherein the image display layer includes an upper surface, first side surfaces facing each other in a first direction, and second side surfaces facing each other in a second direction intersecting the first direction,
The upper surface of the image display layer and the first side surfaces of the image display layer are in contact with the same layer,
Wherein the upper surface of the image display layer and the second side surfaces of the image display layer are in contact with different layers. 5. The method of claim 4,
Each color filter including one of a red color filter, a green color filter, and a blue color filter. 5. The method of claim 4,
And two color filters adjacent to each other overlap each other at an edge of each of the pixels.
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